CN102347254A - 接合方法 - Google Patents

接合方法 Download PDF

Info

Publication number
CN102347254A
CN102347254A CN2010106020975A CN201010602097A CN102347254A CN 102347254 A CN102347254 A CN 102347254A CN 2010106020975 A CN2010106020975 A CN 2010106020975A CN 201010602097 A CN201010602097 A CN 201010602097A CN 102347254 A CN102347254 A CN 102347254A
Authority
CN
China
Prior art keywords
work
solder projection
work package
packages
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010106020975A
Other languages
English (en)
Inventor
张博平
黄贵伟
林威宏
刘重希
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority to CN201510333393.2A priority Critical patent/CN104966679A/zh
Publication of CN102347254A publication Critical patent/CN102347254A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/1605—Shape
    • H01L2224/16057—Shape in side view
    • H01L2224/16058—Shape in side view being non uniform along the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H01L2224/75302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75821—Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75824—Translational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81234—Applying energy for connecting using means for applying energy being within the device, e.g. integrated heater
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81909—Post-treatment of the bump connector or bonding area
    • H01L2224/8193—Reshaping
    • H01L2224/81947—Reshaping by mechanical means, e.g. "pull-and-cut", pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

本发明提供一种接合方法，包含提供一含工作件基座的基材载具，并放置多个第一工作件至这些工作件基座中。举起并放置多个第二工作件，这些第二工作件的每一者皆置于这些第一工作件的其中一者上。接着，回焊这些第一及第二工作件之间的焊料凸块，以同时相互接合这些第一及第二工作件。本发明可改善接合工艺的产能。

Description

接合方法
技术领域
本发明涉及集成电路的制造工艺，尤其涉及一种热压接合方法。
背景技术
集成电路形成于半导体晶片上，其随后被切割成半导体芯片。随后，将这些半导体芯片接合(bonding)至封装基材上。图1至图3显示传统接合工艺的各种中间阶段的剖面图。参见图1，提供一封装基材100，其表面上具有连接垫108。举起(pick up)芯片102，并将其翻转使芯片102表面上的焊料凸块104面朝下，施加助焊剂(flux)至焊料凸块104上。
接着，如图2所示，将芯片102放置于封装基材100上，其中焊料凸块104对着连接垫108放置。接着，对封装基材100及芯片102进行回焊工艺，加热封装基材100、芯片102及焊料凸块104。所得之接合结构如图3所示。由于芯片102及焊料凸块104的重量，焊料凸块104在熔融时会崩塌，且会增加焊料凸块104的宽度W1。
传统接合结构具有许多缺点，其中一点为在接合工艺后，焊料凸块104中经常有破裂产生，且特别是在焊料凸块104中，靠近与焊阻层112及保护层(或聚酰亚胺层)114邻接的位置。此外，由于焊料凸块104之宽度W1的增加，邻近的焊料凸块104彼此之间的距离变短，造成焊料凸块104彼此间短路的风险提高。
发明内容
为了解决上述问题，本发明提供一种接合方法，包括：提供一基材载具，其包含工作件基座；放置多个第一工作件至此工作件基座中；举起并放置多个第二工作件，这些第二工作件的每一者皆置在于这些第一工作件的其中一者上；以及回焊这些第一及第二工作件之间的焊料凸块，以同时相互接合这些第一及第二工作件。
本发明亦提供一种接合方法，包括：提供一基材载具；放置多个第一工作件至此基材载具的工作件基座中；举起并放置多个第二工作件，这些第二工作件的每一者皆放置在这些第一工作件的其中一者上，其中每一第一工作件皆包含一第一焊料凸块与每一第二工作件的一第二焊料凸块相接触；放置一加热工具于这些第二工作件上，同时与这些第二工作件相接触；使用此加热工具来加热这些第二工作件，以进行回焊工艺，其中此第一焊料凸块及此第二焊料凸块被熔融形成一第三焊料凸块；以及在固化此第三焊料凸块之前，对这些第二工作件同时施予一向上的力量，以增加此第三焊料凸块的高度。
根据本发明的这些实施例，确实可改善接合工艺的产能。例如，假设欲接合10个芯片至10个封装基材，每单位时间内仅能接合一个芯片。举起及放置每一芯片需时2秒，且加热及回焊每一芯片需时30秒。用于接合10个芯片所需的时间为(2+30)x10，即320秒。相较之下，在本发明实施例中，虽然举起及放置10个芯片仍需共20秒的时间，由于同时回焊所有芯片，加热及回焊10个芯片仅需30秒。因此，总共只需50秒。如同时接合更多芯片时，则产能的增加则越明显。既然热压接合工艺的成本非常高，由于产能增加所减少的接合工艺的成本亦极为显著。
为让本发明的上述和其他目的、特征、和优点能更明显易懂，下文特举出优选实施例，并配合附图，作详细说明如下：
附图说明
图1至图3显示转统接合工艺的中间阶段的剖面图。
图4A显示基材载具的俯视图。
图4B、图5、图6A、图6B及图7显示依照本发明各种实施例的热压合工艺于中间阶段的剖面图
上述附图中的附图标记说明如下：
20～基材载具    22～工作件基座
24～加热器      26～工作件
28～金属凸块    30～工作件
31～管线        32～金属凸块
36～加热工具        38～加热头
39～向下的力量      40～焊料凸块
42～向上的力量      100～封装基材
102～芯片           104～焊料凸块
106～助焊剂         108～连接垫
112～阻焊层         114～保护层
具体实施方式
本发明接下来将详加讨论各种的实施例的制造及讨论。然而，值得注意的是，本发明所提供的这些实施例仅提供本发明的发明概念，且其可以宽广的形式应用于各种特定情况下。在此所讨论的实施例仅用于举例说明，并非以各种形式限制本发明。
本发明提供一种热压接合(thermal compression bonding，TCB)工艺，亦显示各种实施例的制造中间阶段。在本说明书的各图示及所举实施例中，以相似标号表示相似元件。
图4A及图4B各自显示基材载具20的俯视图及剖面图。基材载具20包含多个工作件基座22，其可排列成具有行及列的阵列。如图4B所示，工作件基座22可为具有工作件26的尺寸(未显示于图4A及图4B中，请参见图5)的基座，工作件26将可放置于此基座中。在一实施例中，加热器24置于或内建于基材载具20中，以加热置于工作件基座22中的工作件。在另一实施例中，基材载具20不包含加热器。
参见图5，工作件26放置于工作件基座22中。在一实施例中，工作件26为封装基材或转接板(interposer)，在其中不含有如晶体管之主动装置。在另一实施中，工作件26为装置芯片，具有如晶体管(未显示)之主动装置于其中。金属凸块28形成在工作件26之顶面上。在一实施例中，所有的工作件基座22皆有工作件26填入。或者，仅有一部分，但非全部的工作件基座22皆有工作件26填入。
接着，如图6A及图6B所示，举起工作件30并放置于工作件26上。在工作件30底面上的金属凸块32与金属凸块28相接触。工作件30可为包含主动装置(未显示)的装置芯片(或裸片)，其可为晶体管。或者，工作件30可为转接板、封装基材或其类似物。在一实施例中，金属凸块32为焊料凸块，或其可为其他种类的凸块，例如铜凸块。然而，金属凸块28及金属凸块32至少其一为焊料凸块。在以下所揭示的实施例中，金属凸块28及32皆为焊料凸块。
将加热工具36置于工作件30上并与其接触，并可对工作件30施予一向下的力量(如箭头39所示)使金属凸块28及32朝向彼此压合，以防止工作件30滑动(slipping)。在图6A中，加热工具36包含多个加热头。当放置于工作件30上时，每一加热头38对齐工作件30的其中一者，并与其接触。在图6B中，加热工具36仅包含单一个加热头，其尺寸大到足以接触所有的工作件30。
接着，如图7所示，进行接合。以加热工具36加热工作件30，且热传导至焊料凸块28及32而使其回流。所得到的焊料凸块结合了焊料凸块28及32，称为焊料凸块40。在图6A所示的实施例中，所有的加热头38皆具有相同温度，因此所有的焊料凸块28及32实质上皆同时被熔融。在图6B所示的实施例中，接触不同工作件30的加热头38的表面部分，具有实质上一致的温度，因此所有的焊料凸块28及32实质上皆同时被熔融。在熔融焊料凸块28及32的期间，加热工具36(及工作件30)可维持在固定的水平上，以防止熔融的凸块28及32更为塌陷而可能造成邻近的凸块28/32彼此短路。在经回焊以形成焊料凸块40之后，加热工具36施予一向上的力量(如箭头42所示)，以使焊料凸块40的高度H得以增加，且减少焊料凸块40的水平尺寸W2。此向上之力量可借由，例如在加热工具36中创造出真空环境以将工作件30向上吸，来达成，其中真空环境可由管线31来产生。在回焊期间，加热器24逐渐增温以加热工作件26。或者，可不加热加热器24。接着，降低加热工具36的温度，直至焊料凸块40固化，结束接合工艺。
在图4A至图7所示的实施例中，基材载具20上所有的工作件皆同时接合。在另一实施例中，基材载具20可分割成多个区域，每一区域包含有多个工作件基座22。借着使用与图4A至图7所示的本质上相同的方法，相同区域内的多个工作件可同时作接合，但不同区域内的工作件可在不同时间作接合。
借由使用这些实施例，确实可改善接合工艺的产能。例如，假设欲接合10个芯片至10个封装基材，每单位时间内仅能接合一个芯片。举起及放置每一芯片需时2秒，且加热及回焊每一芯片需时30秒。用于接合10个芯片所需的时间为(2+30)x10，即320秒。相较之下，在本发明实施例中，虽然举起及放置10个芯片仍需共20秒的时间，由于同时回焊所有芯片，加热及回焊10个芯片仅需30秒。因此，总共只需50秒。如同时接合更多芯片时，则产能的增加则越明显。既然热压接合工艺的成本非常高，由于产能增加所减少的接合工艺的成本亦极为显著。
虽然本发明已以数个优选实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作任意的更动与润饰，因此本发明的保护范围当视所附的权利要求所界定的范围为准。再者，本发明的范围并不限于说明书中所述的特定程序、机器、制造、物质的组合、功能、方法或步骤的实施例，熟知本领域的普通技术人员将可依照本发明所揭示的现有或未来所发展的特定程序、机器、制造、物质的组合、功能、方法或步骤达成相同的功能或相同的结果。因此本发明的保护范围包含这些程序、机器、制造、物质的组合、功能、方法或步骤。此外，本发明的各个保护范围可视为各别的实施例，且各种保护范围及实施例的组合亦在本发明的范围中。

Claims (10)

1.一种接合方法，包括：
提供一基材载具，其包含工作件基座；
放置多个第一工作件至该工作件基座中；
举起并放置多个第二工作件，且所述多个第二工作件的每一者皆置在于所述多个第一工作件的其中一者上；以及
回焊所述多个第一及第二工作件之间的焊料凸块，以同时相互接合所述多个第一及第二工作件。
2.如权利要求1所述的接合方法，其中回焊焊料凸块的步骤包含以一加热工具接触所述多个第二工作件，其中该加热工具包含多个加热头，且所述多个加热头配置为同时加热所述多个第二工作件。
3.如权利要求1所述的接合方法，其中回焊焊料凸块的步骤包含以一加热工具接触所述多个第二工作件，其中该加热工具包含单一个加热头，与所有的所述多个第二工作件相接触，且该单一个加热头配置为同时加热所述多个第二工作件。
4.如权利要求1所述的接合方法，还包含：
在回焊步骤之前，施予一向下的力量以将所述多个第二工作件压向所述多个第一工作件；
在回焊步骤期间，保持所述多个第二工作件在一固定水平上；以及
在熔融该焊料凸块之后及固化该焊料凸块之前，对所述多个第二工作件施予一向上的力量，以增加该焊料凸块之高度。
5.如权利要求1所述的接合方法，其中所述多个第一及第二工作件排列成一阵列。
6.一种接合方法，包括：
提供一基材载具；
放置多个第一工作件至该基材载具的工作件基座中；
举起并放置多个第二工作件，且所述多个第二工作件的每一者皆放置在所述多个第一工作件的其中一者上，其中每一第一工作件皆包含一第一焊料凸块与每一第二工作件的一第二焊料凸块相接触；
放置一加热工具于所述多个第二工作件上，同时与所述多个第二工作件相接触；
使用该加热工具来加热所述多个第二工作件，以进行回焊工艺，其中该第一焊料凸块及该第二焊料凸块被熔融形成一第三焊料凸块；以及
在固化该第三焊料凸块之前，对所述多个第二工作件同时施予一向上的力量，以增加该第三焊料凸块的高度。
7.如权利要求6所述的接合方法，其中该加热工具包含多个加热头，且其中所述多个加热头配置为同时加热所述多个第二工作件。
8.如权利要求6所述的接合方法，其中该加热工具包含单一个加热头，且其中该单一个加热头配置为同时加热所述多个第二工作件。
9.如权利要求6所述的接合方法，还包含在回焊的步骤期间及之前，施予一向下的力量以将所述多个第二工作件压向所述多个第一工作件。
10.如权利要求6所述的接合方法，其中所述多个第一及第二工作件排列成一阵列。
CN2010106020975A 2010-07-22 2010-12-17 接合方法 Pending CN102347254A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510333393.2A CN104966679A (zh) 2010-07-22 2010-12-17 接合方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/841,858 US8381965B2 (en) 2010-07-22 2010-07-22 Thermal compress bonding
US12/841,858 2010-07-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510333393.2A Division CN104966679A (zh) 2010-07-22 2010-12-17 接合方法

Publications (1)

Publication Number Publication Date
CN102347254A true CN102347254A (zh) 2012-02-08

Family

ID=45492763

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2010106020975A Pending CN102347254A (zh) 2010-07-22 2010-12-17 接合方法
CN201510333393.2A Pending CN104966679A (zh) 2010-07-22 2010-12-17 接合方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201510333393.2A Pending CN104966679A (zh) 2010-07-22 2010-12-17 接合方法

Country Status (4)

Country Link
US (2) US8381965B2 (zh)
KR (1) KR101214336B1 (zh)
CN (2) CN102347254A (zh)
TW (1) TWI430374B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104115266A (zh) * 2012-02-09 2014-10-22 勒克斯维科技公司 转移并键合微型器件阵列的方法
CN105609446A (zh) * 2014-11-18 2016-05-25 普罗科技有限公司 积层型半导体封装体的制造装置

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8381965B2 (en) 2010-07-22 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compress bonding
US8104666B1 (en) 2010-09-01 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compressive bonding with separate die-attach and reflow processes
TW201301412A (zh) * 2011-06-20 2013-01-01 Walsin Lihwa Corp 晶片結合方法
TW201301413A (zh) * 2011-06-20 2013-01-01 Walsin Lihwa Corp 晶片結合設備
JP5865639B2 (ja) * 2011-09-15 2016-02-17 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法
US8809875B2 (en) 2011-11-18 2014-08-19 LuxVue Technology Corporation Micro light emitting diode
US9620478B2 (en) 2011-11-18 2017-04-11 Apple Inc. Method of fabricating a micro device transfer head
US8573469B2 (en) 2011-11-18 2013-11-05 LuxVue Technology Corporation Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer
US8349116B1 (en) 2011-11-18 2013-01-08 LuxVue Technology Corporation Micro device transfer head heater assembly and method of transferring a micro device
US9475145B2 (en) 2012-02-27 2016-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Solder bump joint in a device including lamellar structures
US9842817B2 (en) 2012-02-27 2017-12-12 Taiwan Semiconductor Manufacturing Company, Ltd. Solder bump stretching method and device for performing the same
US8967452B2 (en) * 2012-04-17 2015-03-03 Asm Technology Singapore Pte Ltd Thermal compression bonding of semiconductor chips
US9548332B2 (en) 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
US8912045B2 (en) * 2012-06-12 2014-12-16 International Business Machines Corporation Three dimensional flip chip system and method
US9538582B2 (en) * 2012-07-26 2017-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Warpage control in the packaging of integrated circuits
KR101925541B1 (ko) 2012-08-06 2018-12-06 삼성디스플레이 주식회사 구동 ｉｃ실장 장치 및 구동 ｉｃ 실장 방법
US9162880B2 (en) 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
US9558721B2 (en) 2012-10-15 2017-01-31 Apple Inc. Content-based adaptive refresh schemes for low-power displays
US9153171B2 (en) 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
JP5874683B2 (ja) * 2013-05-16 2016-03-02 ソニー株式会社 実装基板の製造方法、および電子機器の製造方法
EP3008553B1 (en) 2013-06-12 2023-06-07 Rohinni, Inc. Keyboard backlighting with deposited light-generating sources
US9367094B2 (en) 2013-12-17 2016-06-14 Apple Inc. Display module and system applications
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US9450147B2 (en) 2013-12-27 2016-09-20 Apple Inc. LED with internally confined current injection area
US9343420B2 (en) 2014-02-14 2016-05-17 Globalfoundries Inc. Universal solder joints for 3D packaging
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9522468B2 (en) 2014-05-08 2016-12-20 Apple Inc. Mass transfer tool manipulator assembly with remote center of compliance
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9741286B2 (en) 2014-06-03 2017-08-22 Apple Inc. Interactive display panel with emitting and sensing diodes
US9624100B2 (en) 2014-06-12 2017-04-18 Apple Inc. Micro pick up array pivot mount with integrated strain sensing elements
US9570002B2 (en) 2014-06-17 2017-02-14 Apple Inc. Interactive display panel with IR diodes
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
US10104772B2 (en) * 2014-08-19 2018-10-16 International Business Machines Incorporated Metallized particle interconnect with solder components
US9705432B2 (en) 2014-09-30 2017-07-11 Apple Inc. Micro pick up array pivot mount design for strain amplification
US9828244B2 (en) 2014-09-30 2017-11-28 Apple Inc. Compliant electrostatic transfer head with defined cavity
US9478583B2 (en) 2014-12-08 2016-10-25 Apple Inc. Wearable display having an array of LEDs on a conformable silicon substrate
KR102411996B1 (ko) * 2015-05-29 2022-06-22 삼성전기주식회사 패키지 기판 및 그 제조 방법
KR102298484B1 (ko) 2016-01-15 2021-09-03 로히니, 엘엘씨. 장치 상의 커버를 통해 후면 발광하는 장치 및 방법
TWI607587B (zh) * 2016-09-13 2017-12-01 台灣琭旦股份有限公司 固晶穩固製程
US10312126B1 (en) * 2017-12-04 2019-06-04 Micron Technology, Inc. TCB bond tip design to mitigate top die warpage and solder stretching issue
JP6916525B2 (ja) * 2018-02-06 2021-08-11 株式会社ブイ・テクノロジー Ｌｅｄディスプレイの製造方法
US10593581B2 (en) * 2018-02-26 2020-03-17 Mikro Mesa Technology Co., Ltd. Transfer head and method for transferring micro devices
US10593582B2 (en) * 2018-02-26 2020-03-17 Mikro Mesa Technology Co., Ltd. Transfer head and method for transferring micro devices
KR102670383B1 (ko) 2019-03-29 2024-05-28 삼성전자주식회사 칩 본딩 장비, 본딩 툴 어셈블리 교체 시스템 및 칩 본딩 장비를 이용한 반도체 장치 제조 방법
US11652080B2 (en) * 2021-05-27 2023-05-16 Intel Corporation Thermal compression bonder nozzle with vacuum relief features

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964396A (en) * 1997-08-12 1999-10-12 International Business Machines Corporation Enhanced ceramic ball grid array using in-situ solder stretch with clip
US6550665B1 (en) * 2001-06-06 2003-04-22 Indigo Systems Corporation Method for electrically interconnecting large contact arrays using eutectic alloy bumping
CN1604269A (zh) * 2003-10-02 2005-04-06 精工爱普生株式会社 制造半导体器件的设备及方法和半导体器件
CN101111932A (zh) * 2005-02-02 2008-01-23 索尼化学&信息部件株式会社 电气部件的安装装置

Family Cites Families (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE559732A (zh) * 1956-10-31 1900-01-01
US3458102A (en) 1967-08-09 1969-07-29 Kulicke & Soffa Ind Inc Semiconductor wafer pickup and bonding tool
US4607779A (en) * 1983-08-11 1986-08-26 National Semiconductor Corporation Non-impact thermocompression gang bonding method
US4763827A (en) * 1984-08-13 1988-08-16 Hitachi, Ltd. Manufacturing method
US4878611A (en) * 1986-05-30 1989-11-07 American Telephone And Telegraph Company, At&T Bell Laboratories Process for controlling solder joint geometry when surface mounting a leadless integrated circuit package on a substrate
US4865245A (en) * 1987-09-24 1989-09-12 Santa Barbara Research Center Oxide removal from metallic contact bumps formed on semiconductor devices to improve hybridization cold-welds
US5059559A (en) * 1987-11-02 1991-10-22 Hitachi, Ltd. Method of aligning and bonding tab inner leads
JPH02206138A (ja) 1989-02-06 1990-08-15 Shimadzu Corp フリップチップ実装方法
US5113581A (en) 1989-12-19 1992-05-19 Matsushita Electric Industrial Co., Ltd. Outer lead bonding head and method of bonding outer lead
JPH0493041A (ja) * 1990-08-08 1992-03-25 Fujitsu Ltd 熱圧着方法
EP0490125B1 (en) * 1990-11-20 1996-03-13 Sumitomo Electric Industries, Ltd. Method of mounting semiconductor elements
JPH0770565B2 (ja) * 1990-12-17 1995-07-31 松下電器産業株式会社 部品のフィルムキャリアへの接合装置
US5148968A (en) 1991-02-11 1992-09-22 Motorola, Inc. Solder bump stretch device
JP2890335B2 (ja) 1991-07-15 1999-05-10 株式会社新川 テープクランプ機構
JPH05144870A (ja) * 1991-11-19 1993-06-11 Fujitsu Ltd バンプ転写方法
JP3423727B2 (ja) * 1992-01-16 2003-07-07 富士通株式会社 フリップチップ接合方法
US5346857A (en) * 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
US5397423A (en) 1993-05-28 1995-03-14 Kulicke & Soffa Industries Multi-head die bonding system
JP3331570B2 (ja) * 1993-09-08 2002-10-07 ソニー株式会社 熱圧着装置と熱圧着方法および液晶表示装置の生産方法
US5346118A (en) 1993-09-28 1994-09-13 At&T Bell Laboratories Surface mount solder assembly of leadless integrated circuit packages to substrates
JPH07170094A (ja) 1993-12-14 1995-07-04 Fujitsu Miyagi Electron:Kk 電子素子チップの収納トレイ
US5385291A (en) * 1994-01-10 1995-01-31 Micron Custom Manufacturing Services, Inc. Method employing an elevating of atmospheric pressure during the heating and/or cooling phases of ball grid array (BGA) soldering of an IC device to a PCB
US5441195A (en) 1994-01-13 1995-08-15 Unisys Corporation Method of stretching solder joints
US5435482A (en) * 1994-02-04 1995-07-25 Lsi Logic Corporation Integrated circuit having a coplanar solder ball contact array
JP3393562B2 (ja) * 1994-05-13 2003-04-07 ソニー株式会社 熱圧着装置
JPH0832296A (ja) * 1994-07-11 1996-02-02 Ibiden Co Ltd 電子部品を実装する際の位置合わせ方法
JP3348528B2 (ja) * 1994-07-20 2002-11-20 富士通株式会社 半導体装置の製造方法と半導体装置及び電子回路装置の製造方法と電子回路装置
JP2774068B2 (ja) * 1994-08-19 1998-07-09 光洋産業株式会社 集合体の熱圧成形方法
DE19510746A1 (de) 1995-03-24 1996-09-26 Bosch Gmbh Robert Verfahren und Vorrichtung zur Steuerung der Bremsanlage eines Fahrzeugs
US5632434A (en) * 1995-06-29 1997-05-27 Regents Of The University Of California Pressure activated diaphragm bonder
KR0152607B1 (ko) 1995-08-17 1998-12-01 김주용 윈도우 클램프 및 그를 이용한 리드 프레임 스트립의 정렬방법
US5639696A (en) 1996-01-31 1997-06-17 Lsi Logic Corporation Microelectronic integrated circuit mounted on circuit board with solder column grid array interconnection, and method of fabricating the solder column grid array
JP3330037B2 (ja) 1996-11-29 2002-09-30 富士通株式会社 チップ部品の接合方法および装置
US6068174A (en) 1996-12-13 2000-05-30 Micro)N Technology, Inc. Device and method for clamping and wire-bonding the leads of a lead frame one set at a time
JPH10223693A (ja) 1997-02-12 1998-08-21 Toshiba Corp 電子部品実装方法および電子部品実装装置
JP2947220B2 (ja) 1997-05-26 1999-09-13 日本電気株式会社 フリップチップ接続方法及びフリップチップ搭載装置
JP3094948B2 (ja) 1997-05-26 2000-10-03 日本電気株式会社 半導体素子搭載用回路基板とその半導体素子との接続方法
US7654432B2 (en) * 1997-05-27 2010-02-02 Wstp, Llc Forming solder balls on substrates
US5984166A (en) 1997-07-09 1999-11-16 Mask Technology, Inc. Process for creating fine and coarse pitch solder deposits on printed ciruit boards
US5968670A (en) * 1997-08-12 1999-10-19 International Business Machines Corporation Enhanced ceramic ball grid array using in-situ solder stretch with spring
US5975409A (en) 1997-08-12 1999-11-02 International Business Machines Corporation Ceramic ball grid array using in-situ solder stretch
SE511873C2 (sv) * 1997-08-27 1999-12-13 Akzo Nobel Nv Katjoniska sockertensider från etoxilerade ammoniumföreningar och reducerande sackarider samt användning därav som hydrotoper för tensider
JP2997231B2 (ja) * 1997-09-12 2000-01-11 富士通株式会社 マルチ半導体ベアチップ実装モジュールの製造方法
US6131795A (en) 1997-11-10 2000-10-17 Matsushita Electric Industrial Co., Ltd. Thermal compression bonding method of electronic part with solder bump
JP2000036501A (ja) 1998-05-12 2000-02-02 Sharp Corp ダイボンド装置
US6213376B1 (en) * 1998-06-17 2001-04-10 International Business Machines Corp. Stacked chip process carrier
JP2000100837A (ja) 1998-09-17 2000-04-07 Miyagi Oki Denki Kk 半導体素子の実装装置
EP1030349B2 (de) 1999-01-07 2013-12-11 Kulicke & Soffa Die Bonding GmbH Verfahren und Vorrichtung zum Behandeln von auf einem Substrat angeordneten elektronischen Bauteilen, insbesondere von Halbleiterchips
JP2000332060A (ja) 1999-05-25 2000-11-30 Sony Corp 半導体装置およびその製造方法
US6501051B1 (en) * 1999-08-23 2002-12-31 Radient Technology Corp. Continuous-conduction wafer bump reflow system
US6237832B1 (en) 1999-10-18 2001-05-29 Henry Chung Wave soldering fixture
WO2001052316A1 (fr) * 2000-01-14 2001-07-19 Toray Engineering Co., Ltd. Procede de montage de puce
US6186392B1 (en) * 2000-01-21 2001-02-13 Micron Technology, Inc. Method and system for forming contacts on a semiconductor component by aligning and attaching ferromagnetic balls
JP4194227B2 (ja) * 2000-06-30 2008-12-10 芝浦メカトロニクス株式会社 電子部品の熱圧着装置
US6666368B2 (en) * 2000-11-10 2003-12-23 Unitive Electronics, Inc. Methods and systems for positioning substrates using spring force of phase-changeable bumps therebetween
JP2002158257A (ja) 2000-11-16 2002-05-31 Mitsubishi Electric Corp フリップチップボンディング方法
US6495397B2 (en) 2001-03-28 2002-12-17 Intel Corporation Fluxless flip chip interconnection
JP4050478B2 (ja) 2001-03-29 2008-02-20 マツダ株式会社 摩擦撹拌を用いた加工制御方法、並びに当該方法を実行するコンピュータプログラム並びに当該コンピュータプログラムを格納した記憶媒体
TW508644B (en) 2001-11-19 2002-11-01 Advanced Semiconductor Eng Die bonding device
US7235886B1 (en) 2001-12-21 2007-06-26 Intel Corporation Chip-join process to reduce elongation mismatch between the adherents and semiconductor package made thereby
US6871394B2 (en) * 2002-01-31 2005-03-29 Texas Instruments Incorporated Method for aligning substrates in a tray
JP3809125B2 (ja) 2002-04-11 2006-08-16 新光電気工業株式会社 半導体チップボンディング用ヘッドおよび半導体チップボンディング方法
US7271497B2 (en) * 2003-03-10 2007-09-18 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
JP4334892B2 (ja) * 2003-03-20 2009-09-30 パナソニック株式会社 部品実装方法
WO2004107432A1 (ja) * 2003-05-29 2004-12-09 Fujitsu Limited 電子部品の実装方法、取外し方法及びその装置
US7077908B2 (en) * 2003-05-30 2006-07-18 Matsushita Electric Industrial Co., Ltd. Substrate holder
JP3921459B2 (ja) 2003-07-11 2007-05-30 ソニーケミカル＆インフォメーションデバイス株式会社 電気部品の実装方法及び実装装置
JP2005064205A (ja) * 2003-08-11 2005-03-10 Niigata Seimitsu Kk 回路基板の移載装置および移載方法、半田ボール搭載方法
JP4206320B2 (ja) * 2003-09-19 2009-01-07 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
TWI244419B (en) 2003-09-25 2005-12-01 Unaxis Internat Tranding Ltd Wire bonder with a downholder for pressing the fingers of a system carrier onto a heating plate
US6942137B2 (en) 2003-10-16 2005-09-13 International Business Machines Corporation Die removal method and apparatus
JP2005190601A (ja) 2003-12-26 2005-07-14 Hitachi Ltd 回転磁気ヘッド型記録再生装置
US6890795B1 (en) 2003-12-30 2005-05-10 Agency For Science, Technology And Research Wafer level super stretch solder
US7357293B2 (en) * 2004-03-24 2008-04-15 Intel Corporation Soldering an electronics package to a motherboard
US7257887B2 (en) * 2004-06-14 2007-08-21 David Lee Die holding apparatus for bonding systems
DE102004034421A1 (de) 2004-07-15 2006-02-09 Pac Tech - Packaging Technologies Gmbh Verfahren und Vorrichtung zur wechselseitigen Kontaktierung von zwei Wafern
US7287685B2 (en) * 2004-09-20 2007-10-30 International Business Machines Corporation Structure and method to gain substantial reliability improvements in lead-free BGAs assembled with lead-bearing solders
WO2006103918A1 (ja) 2005-03-28 2006-10-05 Matsushita Electric Industrial Co., Ltd. フリップチップ実装体とフリップチップ実装方法及びフリップチップ実装装置
JP4534062B2 (ja) 2005-04-19 2010-09-01 ルネサスエレクトロニクス株式会社 半導体装置
US7370258B2 (en) 2005-04-28 2008-05-06 Sandbridge Technologies Inc. Iterative concatenated convolutional Reed-Solomon decoding method
KR100634869B1 (ko) * 2005-05-30 2006-10-17 삼성전자주식회사 멀티 다이 접착 장치
JP4539454B2 (ja) * 2005-06-20 2010-09-08 パナソニック株式会社 電子部品の熱圧着ツールおよび電子部品の実装装置ならびに実装方法
US7135771B1 (en) 2005-06-23 2006-11-14 Intel Corporation Self alignment features for an electronic assembly
US20070000592A1 (en) * 2005-06-29 2007-01-04 Intel Corporation Apparatus and method to operate on one or more attach sites in die package assembly
JP4669371B2 (ja) 2005-10-12 2011-04-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置の製造装置
JP2007142097A (ja) 2005-11-17 2007-06-07 Nec Electronics Corp 半導体装置
US7809461B2 (en) * 2005-11-29 2010-10-05 Panasonic Corporation Working apparatus and working method for circuit board
US7470904B1 (en) * 2006-03-20 2008-12-30 Flir Systems, Inc. Infrared camera packaging
JP4720608B2 (ja) * 2006-05-10 2011-07-13 パナソニック株式会社 部品実装装置および部品実装方法
US7614538B2 (en) 2006-05-15 2009-11-10 Kulicke And Soffa Industries, Inc. Device clamp for reducing oxidation in wire bonding
TWI322476B (en) 2006-10-05 2010-03-21 Advanced Semiconductor Eng Die bonder and die bonding method thereof
JP4930049B2 (ja) 2006-12-27 2012-05-09 富士通株式会社 高さ調節装置及び実装方法
US20090091025A1 (en) 2007-10-04 2009-04-09 Agency For Science, Technology And Research Method for forming and releasing interconnects
JP2009123835A (ja) * 2007-11-13 2009-06-04 Disco Abrasive Syst Ltd 半導体デバイスの製造方法
JP5167779B2 (ja) 2007-11-16 2013-03-21 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2009141269A (ja) * 2007-12-10 2009-06-25 Sony Chemical & Information Device Corp 電気部品の実装方法及び実装装置
JP5040746B2 (ja) 2008-03-14 2012-10-03 日本電気株式会社 電子部品及びその製造方法
US8381965B2 (en) 2010-07-22 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compress bonding
US8104666B1 (en) 2010-09-01 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compressive bonding with separate die-attach and reflow processes
US8177862B2 (en) 2010-10-08 2012-05-15 Taiwan Semiconductor Manufacturing Co., Ltd Thermal compressive bond head

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964396A (en) * 1997-08-12 1999-10-12 International Business Machines Corporation Enhanced ceramic ball grid array using in-situ solder stretch with clip
US6550665B1 (en) * 2001-06-06 2003-04-22 Indigo Systems Corporation Method for electrically interconnecting large contact arrays using eutectic alloy bumping
CN1604269A (zh) * 2003-10-02 2005-04-06 精工爱普生株式会社 制造半导体器件的设备及方法和半导体器件
CN101111932A (zh) * 2005-02-02 2008-01-23 索尼化学&信息部件株式会社 电气部件的安装装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104115266A (zh) * 2012-02-09 2014-10-22 勒克斯维科技公司 转移并键合微型器件阵列的方法
CN104115266B (zh) * 2012-02-09 2017-02-22 苹果公司 转移并键合微型器件阵列的方法
CN105609446A (zh) * 2014-11-18 2016-05-25 普罗科技有限公司 积层型半导体封装体的制造装置

Also Published As

Publication number Publication date
US8556158B2 (en) 2013-10-15
US20120018494A1 (en) 2012-01-26
CN104966679A (zh) 2015-10-07
TWI430374B (zh) 2014-03-11
KR101214336B1 (ko) 2012-12-24
KR20120015256A (ko) 2012-02-21
TW201205696A (en) 2012-02-01
US8381965B2 (en) 2013-02-26
US20130126591A1 (en) 2013-05-23

Similar Documents

Publication Publication Date Title
CN102347254A (zh) 接合方法
CN104037139B (zh) 接合结构及其形成方法
US8177862B2 (en) Thermal compressive bond head
US8616433B2 (en) Forming low stress joints using thermal compress bonding
US8603860B2 (en) Process for forming packages
CN101071777A (zh) 半导体器件的制造方法
CN109196629A (zh) 接合装置
CN101335224B (zh) 半导体封装结构及其制造方法
US8440503B1 (en) Methods for performing reflow in bonding processes
US8159064B2 (en) Lead pin for package substrate, and method for manufacturing package substrate with the same
CN101894764B (zh) 半导体构造及其制造方法
CN102983087A (zh) 倒装芯片bga组装工艺
JP4248441B2 (ja) 超音波フリップチップ実装方法
JP4640380B2 (ja) 半導体装置の実装方法
KR100936781B1 (ko) 플립칩 본딩장치 및 이를 이용한 플립칩 본딩방법
JP2005209833A (ja) 半導体装置の製造方法
CN101587846A (zh) 接合晶片的装置及方法及整平接合晶片的方法
Ding et al. Mitigation of warpage for large 2.5 D Through Silicon Interposer (TSI) package assembly
JP2008091650A (ja) フリップチップ実装方法、および半導体パッケージ
JP2005183561A (ja) 半導体装置の製造方法
KR101156183B1 (ko) 범프 간 직접 접합방법 및 이를 이용한 반도체 패키지
JP2003174116A (ja) 半導体装置の製造方法
KR20080005077A (ko) 반도체 장치의 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20120208