CN104037139B - 接合结构及其形成方法 - Google Patents

接合结构及其形成方法 Download PDF

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Publication number
CN104037139B
CN104037139B CN201310239271.8A CN201310239271A CN104037139B CN 104037139 B CN104037139 B CN 104037139B CN 201310239271 A CN201310239271 A CN 201310239271A CN 104037139 B CN104037139 B CN 104037139B
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bond pad
elongated
length
longitudinal direction
elongated bond
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CN104037139A (zh
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陈昆仑
杜友伦
王俊智
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

本发明公开了一种接合结构及其形成方法，其中一种封装件，其包括第一封装元件和第二封装元件。第一细长接合焊盘位于第一封装元件表面，第一细长接合焊盘具有沿第一纵向的第一长度和小于第一长度的第一宽度。第二细长接合焊盘位于第二封装元件表面。第二细长接合焊盘与第一细长接合焊盘接合。第二细长接合焊盘具有沿第二纵向的第二长度和小于第二长度的第二宽度。第二纵向与第一纵向不平行。

Description

接合结构及其形成方法
技术领域
本发明总的来说涉及半导体领域，更具体地，涉及接合结构及其形成方法。
背景技术
在集成电路封装中，金属-金属接合(有时也被称为直接接合)是一种普遍使用的接合方法。在直接接合中，两个晶圆或芯片的接合焊盘在其间不安放焊料的情况下接合在一起。例如，直接接合可以是铜-铜接合或金-金接合。实施直接接合的方法包括热压接合(TCB，有时被称为热压的接合)。在典型的直接接合工艺中，器件管芯的金属凸起放置在封装衬底的金属凸起上并对齐。施加压力，以使器件管芯与封装衬底相互挤压。在上述接合工艺期间，器件管芯和封装衬底都会被加热。借助于压力和升高的温度，封装衬底和器件管芯的金属凸起的表面部分相互扩散，从而形成接合。
上述直接接合通常需要大块金属衬垫。然而，大块金属衬垫可能会在金属衬垫的平面化中发生严重的凹陷问题。此外，可能会发生两个接合的封装元件之间的偏离，因此接合的接触区会根据偏离的严重程度改变。接触区的变化导致接触电阻的变化，其转而导致生成的封装的性能变化。当使用金属-金属接合以接合具有高接合密度的集成电路时，由于接合焊盘的小规格和小节距，接触电阻的变化将更严重。
发明内容
根据本发明的第一方面，提供一种封装件，包括：第一封装元件；位于所述第一封装元件的表面的第一细长接合焊盘，所述第一细长接合焊盘具有沿第一纵向的第一长度和小于所述第一长度的第一宽度；第二封装元 件；以及位于所述第二封装元件的表面并与所述第一细长接合焊盘接合的第二细长接合焊盘，所述第二细长接合焊盘具有沿第二纵向的第二长度和小于所述第二长度的第二宽度，并且所述第二纵向与所述第一纵向不平行。
优选地，所述第一纵向与所述第二纵向垂直。
优选地，所述第一纵向与所述第二纵向既不平行也不垂直。
优选地，所述第一细长接合焊盘通过金属-金属接合与所述第二细长接合焊盘接合。
优选地，所述第一长度与所述第一宽度的比值在大约2和大约4之间。
优选地，所述第一封装元件包括：图像传感器阵列；排列成第一行的多个第一细长接合焊盘，所述第一细长接合焊盘包含于所述多个第一细长接合焊盘中；以及具有相同的第一长度的多根第一连接线，所述多根第一连接线中的每一根都将所述多个第一细长接合焊盘中的一个与所述图像传感器阵列的一列中的图像传感器电耦合。
优选地，所述第一封装元件进一步包括：排列成第二行的多个第二细长接合焊盘，所述第二行不与所述第一行重叠；以及具有相同的第二长度的多根第二连接线，所述第二长度不同于所述第一长度，所述多根第二连接线的每一根都将所述多个第二细长接合焊盘中的一个与所述图像传感器阵列的一列中的图像传感器电耦合，并且所述多根第一连接线和所述多根第二连接线以交替布局安置。
优选地，所述第一封装元件进一步包括：排列成第二行的多个第二细长接合焊盘；以及多根第二连接线，所述多根第二连接线的每一根都将所述多个第二细长接合焊盘中的一个与所述图像传感器阵列的一列中的图像传感器电耦合，并且所述多根第一连接线和所述多根第二连接线安置在所述图像传感器阵列的相对侧。
根据本发明的第二方面，提供一种封装件，包括：管芯和封装元件，所述管芯包括：单元的阵列；以及位于所述管芯的表面的多个第一细长接合焊盘，所述多个第一细长接合焊盘的每一个都与所述阵列中的一列单元电耦合，并且所述多个第一细长接合焊盘具有相互平行的第一纵向；所述封装元件包括：位于所述封装元件的表面的多个第二细长接合焊盘，所述 多个第二细长接合焊盘的每一个都与所述多个第一细长接合焊盘中的一个接合，所述多个第二细长接合焊盘具有相互平行的第二纵向，并且所述第二纵向与所述第一纵向不平行。
优选地，所述第一纵向与所述第二纵向垂直。
优选地，所述多个第一细长接合焊盘通过金属-金属接合与所述多个第二细长接合焊盘接合。
优选地，所述多个第一细长接合焊盘的每一个都具有长度和宽度，并且所述长度与所述宽度的比值约大于2。
优选地，所述管芯包含于第一晶圆中，所述第一晶圆包含多个与所述管芯相同的管芯，并且所述封装元件包含于第二晶圆中，所述第二晶圆包含多个与所述封装元件相同的封装元件。
优选地，所述管芯进一步包括：位于所述管芯的表面的多个第三细长接合焊盘，所述多个第三细长接合焊盘的每一个都与所述阵列中的一列单元电耦合，并且所述多个第三细长接合焊盘具有相互平行的第三纵向，并且所述多个第一细长接合焊盘排列成第一行，所述多个第三细长接合焊盘排列成第二行。
优选地，所述阵列包括图像传感器。
根据本发明的第三方面，提供一种封装件，包括：第一管芯；位于所述第一管芯的表面的第一接合焊盘，所述第一接合焊盘具有基本为矩形的俯视形状，并且所述矩形的俯视形状具有沿第一方向延伸的第一长度和小于所述第一长度的第一宽度，所述第一长度与第一宽度的比值约大于2；与所述第一管芯接合的第二管芯；以及位于所述第二管芯的表面并与所述第一接合焊盘接合的第二接合焊盘，其中所述第二接合焊盘具有沿垂直于所述第一方向的第二方向延伸的第二长度和小于所述第二长度的第二宽度。
优选地，所述第一长度基本等于所述第二长度，并且所述第一宽度基本等于所述第二宽度。
优选地，所述第一管芯包含于第一未锯晶圆中，所述第一未锯晶圆包含多个第一管芯，并且所述第二管芯包含于第二未锯晶圆中，所述第二未 锯晶圆包含多个第二管芯。
优选地，所述的封装件进一步包括：位于所述第一管芯中的第一介电层，所述第一介电层的顶面与所述第一接合焊盘的顶面齐平，并且所述第二接合焊盘的一部分与所述第一介电层的顶面接触；以及位于所述第二管芯中的第二介电层，所述第二介电层的顶面与所述第二接合焊盘的顶面齐平，并且所述第一接合焊盘的一部分与所述第二介电层的顶面接触。
优选地，所述第二长度与所述第二宽度的比值约大于2。
附图说明
为了更完整的理解实施例及其优势，现在将结合附图所进行的以下描述作为参考，其中：
图1示意性示出了依照示例性实施例的两个封装元件的接合，其中，上述接合通过金属-金属接合实施；
图2示出了依照示例性实施例的位于第一封装元件表面的接合焊盘的俯视图，其中，接合焊盘以交错布局布置并位于阵列的一侧；
图3示出了位于第二封装元件表面的接合焊盘的俯视图，其中，第二封装元件的接合焊盘将与图2所示第一封装元件的接合焊盘接合；
图4示出了依照另外的示例性实施例的位于第一封装元件表面的接合焊盘的俯视图，其中，接合焊盘位于阵列的相对侧；
图5示出了位于第二封装元件表面的接合焊盘的俯视图，其中，第二封装元件的接合焊盘将与图4所示第一封装元件的接合焊盘接合；
图6示出了依照又一另外的示例性实施例的位于第一封装元件表面的接合焊盘的俯视图，其中，接合焊盘交错位于阵列的相对侧；
图7示出了位于第二封装元件表面的接合焊盘的俯视图，其中，第二封装元件的接合焊盘将与图6所示第一封装元件的接合焊盘接合；
图8示出了依照某些示例性实施例的接合焊盘的俯视图，其中，同一晶圆或芯片的细长接合焊盘的纵向不相互平行；
图9示出了依照某些示例性实施例的接合焊盘的俯视图，其中，同一接合对中的接合焊盘的纵向既不相互垂直也不相互平行；以及
图10示出了相互接合的两个接合焊盘的截面图。
具体实施方式
以下详细讨论本发明的实施例的制造和使用。然而应该理解，所述实施例提供很多适用的概念，其可以在各种各样的特定环境下实施。所讨论的特定实施例仅仅是说明性的，并不限定本发明的范围。
本文依照各种示例性实施例提供了接合结构，并讨论了实施例的变化。贯穿各种视图和说明性实施例，相同参考标号用以表示相同元件。
参见图1，例如，通过也被称为直接接合的金属-金属接合，封装元件200与封装元件100接合。在另外的实施例中，可以使用其他接合机制，诸如焊料接合。在接合工艺中，封装元件100表面上的细长接合焊盘108(图2至图10)与封装元件200的细长接合焊盘208(图2至图10)直接物理接触并接合，其中，细长接合焊盘108和其对应的细长接合焊盘208之间不应用焊料。在接合工艺期间，可以加热封装元件100和200，并且可以施加压力以使封装元件100和200相互挤压。借助于压力和升高的温度，接合焊盘108和208的表面部分相互扩散，因此形成接合。
依照某些实施例，每个封装元件100和200均可以是器件晶圆、中介晶圆、封装衬底带等。在封装元件100和200为器件晶圆的实施例中，封装元件100和200可以是逻辑电路晶圆、存储器晶圆、互补金属氧化物半导体(CMOS)图像传感器(CIS)晶圆等。例如，在封装元件100和200为存储器晶圆的实施例中，封装元件100和200在接合之后形成堆栈存储器。在封装元件100和200为CIS晶圆的实施例中，封装元件100和200在接合之后形成3维CIS封装。在封装元件100和200为中介晶圆的实施例中，封装元件100和200没有诸如晶体管的有源器件，并被用以从中介晶圆的一侧至相对侧进行电耦合布线。在封装元件100和200为封装衬底带的实施例中，封装元件100和200可以包括多个封装衬底，并可以包括叠层衬底(具有芯体)或层压衬底。尽管图1示出封装元件100和200具有圆形俯视形状，但是它们也可以具有矩形俯视形状。此外，在某些实施例中，每个封装元件100和200均可以包括多个芯片。或者，每个封装元 件100和200均可以是离散器件管芯、离散封装衬底、离散中介管芯等，封装元件在其接合时已经被从相应的晶圆或带中锯开。
图2示出了封装元件100以及封装元件100中的部件的俯视图。在封装元件为晶圆的实施例中，封装元件100可以包括多个彼此相同的管芯(示出了一个管芯102)。在本发明中，图像传感器阵列104和对应的连接线106以及细长接合焊盘108用作实例以解释实施例中的概念。应该理解，上述实施例的教导也适用于所有其他种类的电路，诸如存储阵列、逻辑电路等。
在某些示例性实施例中，封装元件100包括图像传感器阵列104，其包括排列成多行多列的多个图像传感器(单元)105。在某些实施例中，每列中的图像传感器105连接至其中一根连接线106(包括106A和106B)。每根连接线106可以连接至包括108A和108B的细长接合焊盘108中的一个。连接线106可以与接合焊盘108处于同一个金属层并同时形成。或者，连接线106可以与接合焊盘108处于不同的金属层。细长接合焊盘108位于封装元件100的表面。上述列的节距表示为P。
细长接合焊盘108具有长度L1和小于长度L1的宽度W1。在某些实施例中，细长接合焊盘108具有矩形俯视形状，其可具有大致尖角或圆角。由于光学效应，所制造的管芯或晶圆上的细长接合焊盘108可以具有圆角。然而，具有圆角的细长接合焊盘108仍可以包括中间段，中间段包含各自接合焊盘的大部分，其中中间段具有统一的宽度W1。比值L1/W1可以大于2或大于3，然而也可以使用较小的比值。比值L1/W1也可以在大约2与大约4之间。在所示实施例中，细长接合焊盘108的纵向与列的方向(Y方向)平行。在另外的实施例中，细长接合焊盘108的纵向也可以与行的方向(X方向)平行。
依照某些实施例，细长接合焊盘108和连接线106的布局具有交错设计，例如，在该交错设计中细长接合焊盘108A沿X方向延伸排列成第一行，而细长接合焊盘108B排列成与第一行平行的第二行。与细长接合焊盘108A连接的连接线106A，短于与细长接合焊盘108B连接的连接线106B。此外，连接线106A和连接线106B以交替布局分配。通过这种设计，细长接合焊盘108A可具有等于2P的节距，而细长接合焊盘108B也可具有等于2P的节距。通过交错布局设计，细长接合焊盘108适用于连接具有较小节距的阵列104，该较小节距可能为细长接合焊盘108A(或108B)的节距的一半。尽管未示出，但是在另外的实施例中，也可以将所有细长接合焊盘108排列成一行，从而使细长接合焊盘108的节距也等于节距P。当节距P大到足以适应细长接合焊盘108和208时，可以使用相应设计。
图2还示出了与细长接合焊盘108接合的细长接合焊盘208。贯穿整个描述，接合焊盘108和与接合焊盘108接合的接合焊盘208组合起来被称为接合对。细长接合焊盘208由于位于封装元件200中而使用虚线示出，图3示出了封装元件200的俯视图。参见图3，细长接合焊盘208位于封装元件200的表面，并例如通过金属-金属接合而与细长接合焊盘108接合，然而还可以使用其他接合方法，诸如焊料接合。在实施焊料接合的实施例中，焊料层可以在同一接合对中的细长接合焊盘108和208中的每个或其中一个之上形成。细长接合焊盘208具有长度L2以及小于长度L2的宽度W2。在某些实施例中，长度L2等于细长接合焊盘108的长度L1。在另外的实施例中，长度L2大于或小于长度L1。此外，在某些实施例中，宽度W2等于细长接合焊盘108的宽度W1。在另外的实施例中，宽度W2大于或小于宽度W1。在某些示例性实施例中，封装元件200包括电路204以及连接线206，连接线206使细长接合焊盘208与电路204电耦合。在另外的实施例中，连接线206为与封装元件200的对面的连接布线，上述对面与封装元件100所接合到的表面相对。在相应实施例中，封装元件200可以包括中介衬底或封装衬底，然而封装元件也可以是包括通孔的器件管芯/晶圆。图3还示出了细长接合焊盘108，并且由于其位于封装元件100之中而使用虚线示出。
在图2和图3中，细长接合焊盘108的纵向不平行于细长接合焊盘208的纵向。在某些实施例中，细长接合焊盘108的纵向垂直于细长接合焊盘208的纵向。因此，当接合时，同一接合对中的接合焊盘108与208之间的接触区等于W1xW2。在接合工艺中，封装元件100与200之间可能会发生偏离，因此细长接合焊盘108的中心可能会与对应的细长接合焊盘208的中心偏离。有利的是，在使用细长设计的情况下，即使发生了偏离，接触区仍可以保持为W1xW2。因此，无论是否发生偏离并且不管偏离大小，接触电阻均保持恒定。为确保接触区保持为W1xW2，选定长度L1和L2以便于在预期的接触区(108和208的中心区域)每一侧上延长的长度LE大于或等于对齐工具和对齐工艺的最大校正。换句话说，在将延长的LE添加到预期的接触区的每一侧的情况下，即使在成功的对齐操作中偏离被最大化，接触区将仍是W1xW2。
在每个封装元件100和200包括多个管芯的实施例中，在接合工艺之后，可以将接合结构锯成多个封装件，每个封装件包括管芯102(图2)和202(图3)中的一个。
图4至图9示出了依照另外的实施例的封装元件100和200。除非有特殊说明，否则这些实施例中的元件的布局和形状基本上与图2和图3所示实施例中由相同参考标号表示的元件相同。因此，与图4至图9所示元件相关的细节可以在对图2至图3所示实施例的讨论中找到。
图4示出了依照另外的实施例的封装元件100的俯视图。除细长接合焊盘108分布在阵列104的相对侧之外，这些实施例与图2中的实施例类似。因此，相邻的细长接合焊盘108之间的节距也等于2P。这种布局的一个有利的特性在于所有连接线106可以具有相同的长度，并因此具有相同的电阻。细长接合焊盘208由于位于封装元件100之中而在图4中使用虚线示出。
图5示出了依照某些示例性实施例的封装元件200的俯视图，其中，封装元件200与图4中的封装元件100接合。细长接合焊盘208以一一对应的方式与接合焊盘108接合。再次，接合焊盘108的纵向可以不平行于并可以垂直于对应的接合焊盘208的纵向。细长接合焊盘108由于位于封装元件200中而在图5中使用虚线示出。
图6示出了依照又一另外的实施例的封装元件100的俯视图。除细长接合焊盘108分布在阵列104的相对侧之外，这些实施例与图2和图3中的实施例类似。此外，细长接合焊盘108在阵列104的每一侧上具有交错布局。因此连接线106A和106B在阵列104的每一侧上可以具有不同的长 度，而接合焊盘108A和接合焊盘108B可以排列成相互平行的不同的行。依照这些实施例，相邻细长接合焊盘108之间的节距被提高到4P。
图7示出了依照某些示例性实施例的封装元件200的俯视图，其中，封装元件200与图6中的封装元件100接合。接合焊盘208以一一对应的方式与接合焊盘108接合。再次，接合焊盘108的纵向可以不平行于并可以垂直于对应的接合焊盘208的纵向。细长接合焊盘108A和108B由于位于封装元件200之中而在图7中使用虚线示出。
图8示出在同一个芯片(和/或同一个晶圆)中的细长接合焊盘108可以具有多个不相互平行的纵向。依照某些实施例，如图8所示，某些细长接合焊盘108具有沿X方向的纵向，而某些其他的细长接合焊盘108具有沿Y方向的纵向。细长接合焊盘208的纵向被设计成不平行于分别连接的细长接合焊盘108的纵向。能够将细长接合焊盘108的纵向分配在不同方向上提供了用于分配接合焊盘的灵活设计，以便最大化芯片区域的使用率。
图9示出处于同一接合对中的细长接合焊盘108和208具有既不相互垂直也不相互平行的纵向。细长接合焊盘108与208的纵向之间的夹角α可以在大约30度与90度之间。再次，在这些实施例中，同一管芯或晶圆中的细长接合焊盘108可以具有多个不相互平行的纵向，并且同一管芯或晶圆中的细长接合焊盘208也可以具有多个不相互平行的纵向。
图10示出了包括相互接合的一个接合焊盘108和一个接合焊盘208的接合对的截面图。该截面图可以从图1到图9的任意一个之中得到。在某些实施例中，介电扩散势垒110和210分别在封装元件100和200的顶面上形成，并被用以防止细长接合焊盘108和208中的材料(诸如铜)扩散到另一封装元件中。扩散势垒110和210可以包括氮化物、氮氧化物等。在某些实施例中，扩散势垒110和210也可以例如通过熔接来相互接合。接合焊盘208的面向封装元件100的表面包括：与介电势垒110的表面接触的第一部分，以及与接合焊盘108的表面接触并接合的第二部分。类似地，接合焊盘108的面向封装元件200的表面包括：与介电势垒210的表面接触的第一部分，以及与接合焊盘208的表面接触并接合的第二部分。
在本发明的实施例中，缩减了接合焊盘的宽度，这引起接合焊盘的区域的缩减。因此，减轻了接合焊盘平面化中的凹陷效应，并改善了接合质量。此外，通过接合焊盘的延长设计以及同一接合对中的接合焊盘的不平行分配，即使发生偏离，接合的接触区也可以保持不变。
依照某些实施例，一种封装件包括第一封装元件和第二封装元件。第一细长接合焊盘位于第一封装元件表面，其中，第一细长接合焊盘具有沿第一纵向的第一长度和小于第一长度的第一宽度。第二细长接合焊盘位于第二封装元件表面。第二细长接合焊盘与第一细长接合焊盘接合。第二细长接合焊盘具有沿第二纵向的第二长度和小于第二长度的第二宽度。第二纵向与第一纵向不平行。第一长度与第一宽度的比值可以大于约2。
依照其他实施例，一种封装件包括管芯，其包括单元的阵列和位于管芯表面的多个第一细长接合焊盘。所述多个第一细长接合焊盘的每个与阵列中的一列单元电耦合。所述多个第一细长接合焊盘具有相互平行的第一纵向。上述封装件进一步包括封装元件，其包括位于封装元件表面的多个第二细长接合焊盘。所述第二细长接合焊盘的每个与所述多个第一细长接合焊盘中的一个接合。所述多个第二细长接合焊盘具有相互平行的第二纵向，并且其中，第二纵向与第一纵向不平行。
依照又一其他实施例，一种封装件包括第一管芯和位于第一管芯表面的第一接合焊盘，其中，第一接合焊盘具有基本为矩形的俯视形状。矩形的俯视形状具有沿第一方向延伸第一长度和小于第一长度的第一宽度。上述封装件进一步包括与第一管芯接合的第二管芯，以及位于第二管芯表面并与第一接合焊盘接合的第二接合焊盘。第二接合焊盘具有：沿垂直于第一方向的第二方向延伸的第二长度，以及小于第二长度的第二宽度。第一长度与第一宽度的比值可以大于约2。
虽然本文详细地描述了这些实施例和它们的优势，但应该理解，在不背离附加的权利要求所定义实施例的精神和范围的情况下，在这里可以进行多种变化、替换以及改变。此外，本专利申请的范围并不旨在局限于说明书中所描述的工艺、机器、制造、物质组成、手段、方法以及步骤中特定的实施例。本领域普通技术人员根据本发明将很容易理解，同这里所描 述的实施例实现大致相同功能或取得大致相同结果的工艺、机器、制造、物质组成、手段、方法或步骤，无论现有的或将来要开发的，都可以依照本发明使用。相应地，附加的权利要求旨在将这种工艺、机器、制造、物质组成、手段、方法或步骤包括在其范围内。此外，每一条权利要求构成各自的实施例，而各种权利要求和实施例的组合也在本发明的范围之内。

Claims (20)

1.一种封装件，包括：
第一封装元件；
位于所述第一封装元件的表面的第一细长接合焊盘，所述第一细长接合焊盘具有沿第一纵向的第一长度和小于所述第一长度的第一宽度；
第二封装元件；以及
位于所述第二封装元件的表面并与所述第一细长接合焊盘接合的第二细长接合焊盘，所述第二细长接合焊盘具有沿第二纵向的第二长度和小于所述第二长度的第二宽度，并且所述第二纵向与所述第一纵向不平行，并且所述第一纵向和所述第二纵向均平行于所述第一封装元件的所述表面。
2.根据权利要求1所述的封装件，其中，所述第一纵向与所述第二纵向垂直。
3.根据权利要求1所述的封装件，其中，所述第一纵向与所述第二纵向既不平行也不垂直。
4.根据权利要求1所述的封装件，其中，所述第一细长接合焊盘通过金属-金属接合与所述第二细长接合焊盘接合。
5.根据权利要求1所述的封装件，其中，所述第一长度与所述第一宽度的比值在2和4之间。
6.根据权利要求1所述的封装件，其中，所述第一封装元件包括：
图像传感器阵列；
排列成第一行的多个第一细长接合焊盘，所述第一细长接合焊盘包含于所述多个第一细长接合焊盘中；以及
具有相同的第一长度的多根第一连接线，所述多根第一连接线中的每一根都将所述多个第一细长接合焊盘中的一个与所述图像传感器阵列的一列中的图像传感器电耦合。
7.根据权利要求6所述的封装件，其中，所述第一封装元件进一步包括：
排列成第二行的多个第二细长接合焊盘，所述第二行不与所述第一行重叠；以及
具有相同的第二长度的多根第二连接线，所述第二长度不同于所述第一长度，所述多根第二连接线的每一根都将所述多个第二细长接合焊盘中的一个与所述图像传感器阵列的一列中的图像传感器电耦合，并且所述多根第一连接线和所述多根第二连接线以交替布局安置。
8.根据权利要求6所述的封装件，其中，所述第一封装元件进一步包括：
排列成第二行的多个第二细长接合焊盘；以及
多根第二连接线，所述多根第二连接线的每一根都将所述多个第二细长接合焊盘中的一个与所述图像传感器阵列的一列中的图像传感器电耦合，并且所述多根第一连接线和所述多根第二连接线安置在所述图像传感器阵列的相对侧。
9.一种封装件，包括：
管芯，所述管芯包括：
单元的阵列；以及
位于所述管芯的表面的多个第一细长接合焊盘，所述多个第一细长接合焊盘的每一个都与所述阵列中的一列单元电耦合，并且所述多个第一细长接合焊盘具有相互平行的第一纵向；以及
封装元件，所述封装元件包括：
位于所述封装元件的表面的多个第二细长接合焊盘，所述多个第二细长接合焊盘的每一个都与所述多个第一细长接合焊盘中的一个接合，所述多个第二细长接合焊盘具有相互平行的第二纵向，并且所述第二纵向与所述第一纵向不平行，并且所述第一纵向和所述第二纵向均平行于所述管芯的所述表面。
10.根据权利要求9所述的封装件，其中，所述第一纵向与所述第二纵向垂直。
11.根据权利要求9所述的封装件，其中，所述多个第一细长接合焊盘通过金属-金属接合与所述多个第二细长接合焊盘接合。
12.根据权利要求9所述的封装件，其中，所述多个第一细长接合焊盘的每一个都具有长度和宽度，并且所述长度与所述宽度的比值大于2。
13.根据权利要求9所述的封装件，其中，所述管芯包含于第一晶圆中，所述第一晶圆包含多个与所述管芯相同的管芯，并且所述封装元件包含于第二晶圆中，所述第二晶圆包含多个与所述封装元件相同的封装元件。
14.根据权利要求9所述的封装件，其中，所述管芯进一步包括：
位于所述管芯的表面的多个第三细长接合焊盘，所述多个第三细长接合焊盘的每一个都与所述阵列中的一列单元电耦合，并且所述多个第三细长接合焊盘具有相互平行的第三纵向，并且所述多个第一细长接合焊盘排列成第一行，所述多个第三细长接合焊盘排列成第二行。
15.根据权利要求9所述的封装件，其中，所述阵列包括图像传感器。
16.一种封装件，包括：
第一管芯；
位于所述第一管芯的表面的第一接合焊盘，所述第一接合焊盘具有为矩形的俯视形状，并且所述矩形的俯视形状具有沿第一方向延伸的第一长度和小于所述第一长度的第一宽度，所述第一长度与第一宽度的比值大于2；
与所述第一管芯接合的第二管芯；以及
位于所述第二管芯的表面并与所述第一接合焊盘接合的第二接合焊盘，其中所述第二接合焊盘具有沿垂直于所述第一方向的第二方向延伸的第二长度和小于所述第二长度的第二宽度，并且所述第一长度、所述第一宽度、所述第二长度和所述第二宽度的测量方向均平行于所述第一管芯的所述表面和所述第二管芯的所述表面。
17.根据权利要求16所述的封装件，其中，所述第一长度等于所述第二长度，并且所述第一宽度等于所述第二宽度。
18.根据权利要求16所述的封装件，其中，所述第一管芯包含于第一未锯晶圆中，所述第一未锯晶圆包含多个第一管芯，并且所述第二管芯包含于第二未锯晶圆中，所述第二未锯晶圆包含多个第二管芯。
19.根据权利要求16所述的封装件，进一步包括：
位于所述第一管芯中的第一介电层，所述第一介电层的顶面与所述第一接合焊盘的顶面齐平，并且所述第二接合焊盘的一部分与所述第一介电层的顶面接触；以及
位于所述第二管芯中的第二介电层，所述第二介电层的顶面与所述第二接合焊盘的顶面齐平，并且所述第一接合焊盘的一部分与所述第二介电层的顶面接触。
20.根据权利要求16所述的封装件，其中，所述第二长度与所述第二宽度的比值大于2。
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