TWI445108B - 接合的方法 - Google Patents

接合的方法 Download PDF

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TWI445108B
TWI445108B TW100106857A TW100106857A TWI445108B TW I445108 B TWI445108 B TW I445108B TW 100106857 A TW100106857 A TW 100106857A TW 100106857 A TW100106857 A TW 100106857A TW I445108 B TWI445108 B TW I445108B
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workpiece
workpieces
solder bumps
heating
joining
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TW100106857A
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TW201212135A (en
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Chien Ling Hwang
Ying Jui Huang
Cheng Chung Lin
Chung Shi Liu
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Taiwan Semiconductor Mfg
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    • B23K1/00—Soldering, e.g. brazing, or unsoldering
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Description

接合的方法
本發明係有關於晶片接合的方法，特別有關於熱壓接合的方法。
在半導體晶圓上形成積體電路，然後切割成半導體晶片，接著將半導體晶片接合至封裝基底上。在接合製程期間，介於半導體晶片與封裝基底之間的焊料凸塊會進行回焊，傳統的回焊方法包含傳統型回焊以及熱壓回焊。傳統型回焊具有相對較高的生產率，因為複數個封裝基底與其上方的晶片可經由回焊製程同時接合在一起。然而，傳統型回焊需要一段長的時間加熱焊料凸塊，其產生的高熱預算會在晶片內造成明顯的翹曲，並且可能會在低介電常數介電層之間造成脫層。
熱壓接合需要的熱預算較傳統型回焊低，然而，熱壓接合的生產率非常低，在熱壓接合期間，焊頭(bond head)拾起晶片，將晶片翻轉，並且將晶片附著至封裝基底，然後焊頭經過溫度上升製程，加熱晶片以及用於接合晶片與封裝基底的焊料凸塊。在焊料凸塊熔融之後，焊頭經過冷卻製程，使得焊料凸塊固化，針對每個晶片需重複此製程，因此熱壓接合的生產率非常低，其生產率有時可能只有傳統型回焊生產率的1/15。
依據一實施例，接合的方法包含提供第一工件，以及在第一工件上附著第二工件，第一焊料凸塊設置在第一工件與第二工件之間。使用加熱工具的加熱頭加熱第二工件，使第一焊料凸塊熔融，在加熱第二工件的步驟之後，允許第一工件與第二工件中的一個在水平方向自由地移動，讓第一工件與第二工件自行對準，在允許第一工件與第二工件中的一個移動的步驟之後，降低加熱頭的溫度，直到第一焊料凸塊固化，形成第二焊料凸塊。
依據其他實施例，接合的方法包含提供夾具型基底載體，其包含複數個工件支撐架；將複數個第一工件放置於這些工件支撐架內，其中這些第一工件的邊緣部分直接位於夾具型基底載體的阻擋臂下方，且與阻擋臂垂直地重疊；以及在這些第一工件上方放置複數個第二工件，焊料凸塊接合這些第二工件至第一工件。此方法更包含對焊料凸塊進行回焊，並且在焊料凸塊熔融之後，將這些第二工件與在熔融狀態的焊料凸塊一起提起，其中這些第一工件被提起，懸掛在這些第二工件下方，且夾具型基底載體沒有被提起。然後，降低焊料凸塊的溫度至焊料凸塊的熔融溫度之下。
依據另一實施例，接合的方法包含提供夾具型基底載體的主體，其包括複數個工件支撐架；將複數個第一工件放置於這些工件支撐架內；在這些第一工件上附著複數個第二工件，焊料凸塊接合這些第二工件至第一工件；將夾具型基底載體的蓋板放置在夾具型基底載體的主體上，其中蓋板包括阻擋臂直接延伸至這些第一工件的邊緣上方，並且與這些第一工件的邊緣接觸；在焊料凸塊上方放置複數個加熱頭，並回焊焊料凸塊，其中每個加熱頭接觸一個第二工件；藉由使用這些加熱頭加熱焊料凸塊而使焊料凸塊回焊；在焊料凸塊熔融之後，從這些加熱頭釋放這些第二工件；以及在釋放這些第二工件的步驟之後，於焊料凸塊在熔融狀態下，使用這些加熱頭提起這些第二工件。
依據又另一實施例，接合的方法包含提供夾具型基底載體的主體，其包括複數個工件支撐架；將複數個第一工件放置於這些工件支撐架內；使用第一工具模組，將複數個第二工件附著在這些第一工件上，焊料凸塊接合這些第二工件至第一工件；將夾具型基底載體的蓋板放置在夾具型基底載體的主體上，將夾具型基底載體以及這些第一與第二工件轉移至第二工具模組；以及使用多頭加熱工具的複數個加熱頭回焊焊料凸塊，這些加熱頭接觸這些第二工件，多頭加熱工具包含在第二工具模組內。
為了讓本發明之上述目的、特徵、及優點能更明顯易懂，以下配合所附圖式，作詳細說明如下：
以下詳細討論揭示的實施例之製造與使用，然而，可以理解的是，這些實施例提供許多可應用的發明概念，其可以在各種特定背景中實施，在此所討論的特定實施例僅用於說明，並非限定揭露的範圍。
本發明之實施例提供一種新的熱壓接合(thermal compress bonding；TCB)製程，各種實施例的中間製造階段說明如下，同時也說明實施例的各種變化。在各種圖式與實施例中，使用相似的標號標示相似的元件。
第1及2圖分別顯示夾具型基底載體(jig-type substrate carrier)20的本體與蓋板，參閱第1圖，夾具型基底載體20的本體20A包含複數個工件支撐架(work piece holder)22，其可以排列成具有複數行與複數列之陣列。雖然第1圖只顯示工件支撐架22為2x3的陣列，基底載體20的工件支撐架可具有任何數目的行與列。工件支撐架22可包含部分的主體20A，其形成孔洞的側壁與底部，在孔洞中可放置工件。
參閱第2圖，提供夾具型基底載體20的蓋板20B，蓋板20B也包含複數個開口24，蓋板20B可牢固在本體20A上，使得蓋板20B與本體20A可以被搬運，並且被視為整合的單元使用。當蓋板20B牢固在本體20A上時，每個開口24直接位於一個工件支撐架22上方。此外，本體20A(第1圖)的長度L1與寬度W1大於蓋板20B的個別長度L2與寬度W2，使得蓋板20放置在本體20A上之後，每個工件支撐架22的邊緣部分會被部分的蓋板20B覆蓋，而每個工件支撐架22的中央部分則不會被覆蓋。
再參閱第1圖，在工件支撐架22內放置複數個工件40，每個工件支撐架22支撐一個工件40。在一實施例中，工件40為封裝基底或中介層(interposer)，其不具有主動元件例如電晶體在其中。在另一實施例中，工件40為元件晶片(device die)，其具有主動元件例如電晶體(未繪出)在其中。在整篇說明書的描述中，工件40另外也稱為(封裝)基底40，雖然它們也可以是其他類型的工件。金屬凸塊42在基底40的頂端表面上形成，基底40的長度L3與寬度W3小於工件支撐架22的個別長度L1與寬度W1。另外，基底40的長度L3與寬度W3中的至少一個以及可能兩個都大於蓋板20B的開口24之個別長度L2與寬度W2。
參閱第3圖，使用晶片黏著頭(die-attach head)28將工件30拾起，工件30也可以是元件晶片、中介層、封裝基底或類似的物件。在整篇說明書的描述中，工件30也稱為晶片30，雖然它們也可以是其他類型的工件。晶片30可從晶圓切割得到，如第3圖所示之晶圓32，然而晶片30也可能放置在晶片托盤(die tray)(未繪出)中，並且晶片黏著頭28可從晶片托盤中拾起晶片30。晶片黏著頭28被配置成使用真空拾起晶片30，並且將晶片30表面上的焊料凸塊34(在第3圖中未繪出，請參閱第4圖)浸泡在助熔劑(flux)中。晶片黏著頭28是工具模組(之後稱為晶片黏著模組)的一部分，其用於執行晶片黏著製程。
第4圖顯示使用壓縮放置(compressive placement)方式將晶片30黏著在基底40上，其中也使用晶片黏著頭28。在進行晶片黏著期間，夾具型基底載體20的本體20A可放置在平台45上，並且可將夾具型基底載體20的本體20A牢固在平台45上，例如使用真空的方式。平台45也是晶片黏著模組的一部分，在晶片黏著之後，焊料凸塊34接觸基底40的金屬凸塊42，雖然凸塊34被稱為焊料凸塊，凸塊34也可以是非回焊(non-reflowable)金屬凸塊，例如銅柱凸塊。然而，凸塊34與42中的至少一個，以及可能兩個都是焊料凸塊，因此，位於晶片30與基底40之間的焊料凸塊之後稱為焊料凸塊34/42。為了完成晶片黏著，晶片黏著頭28施加一向下的力，例如少於約5NT，使得焊料凸塊34可黏著在金屬凸塊42上，晶片黏著頭28可重複執行晶片30的拾起、助熔劑浸泡以及壓縮放置的製程，直至全部的基底40都具有晶片30放置在其上。
在進行晶片黏著期間，晶片黏著頭28的溫度可以在例如低於約50℃的低溫，並且可以在室溫。在晶片30進行晶片黏著之後，將蓋板20B放置在本體20A上，並牢固於本體20A上(參閱第5B圖)，因此夾具型基底載體20、基底40以及晶片30形成整合的部件，並且可從晶片黏著模組轉移開，使得焊料凸塊34/42可以被回焊。晶片30的水平長度L4與寬度W4(在第4圖中未繪出W4，請參閱第10圖)小於第2圖中開口24的個別尺寸L2與W2。因此，即使晶片30已經黏著至基底40上，蓋板20B仍可放置在本體20A上。
第5A及5B圖分別顯示焊料凸塊34/42進行回焊的透視圖與剖面示意圖，夾具型基底載體20可放置在平台48(第5B圖)上，平台48可使用真空固定住夾具型基底載體20。此外，平台48可在後續的回焊製程之前預熱基底40，例如以低於100℃的溫度進行預熱。接著，如第5A圖所示，複數個加熱頭46，其為多頭(multi-head)加熱工具44的一部分，接觸晶片30的頂端表面，每個加熱頭46接觸一個晶片30。如第5B圖所示，加熱頭46加熱晶片30直到焊料凸塊34/42熔融。
接著，如第6圖所示，加熱頭46，其也具有使用真空拾起晶片30的能力，將晶片30提起，如箭頭47所示。藉由熔融的焊料凸塊34/42的表面張力，基底40也被提起，在提起的製程期間，基底40自由地垂掛在個別的晶片30下方，並且自由地沿著水平方向移動，如箭頭49所示。因此，基底40會自行對準其上方個別的晶片30。因為基底40的長度L3以及/或寬度W3(第1圖)大於開口24的個別長度L2以及/或寬度W2(第2圖)，基底40被一部份的蓋板20B阻擋，這個部分之後稱為阻擋臂(blocking arms)20B’。阻擋臂20B’直接位於個別基底40的邊緣部分上方，並且與邊緣部分重疊。調整晶片30被提起的距離，使得基底40被蓋板20B阻擋之後，晶片30可以持續地稍微被提起，並且熔融的焊料凸塊34/42可以在垂直方向被拉伸。因此，熔融的焊料凸塊34/42的高度被調整，並且降低相鄰的焊料凸塊34/42之間產生架橋的可能性。然後可降低加熱頭46的溫度至低於焊料凸塊34/42的熔融溫度，使熔融的焊料凸塊34/42固化，然後加熱頭46釋放個別的晶片30。
第7至9圖顯示依據其他實施例，在晶片與封裝基底之間的焊料凸塊進行回焊的中間階段之剖面示意圖，除非特別指出，在這些實施例中的參考標號表示與第1至6圖的實施例中所示之元件相似，這些實施例的初始步驟基本上與第1至5A圖所示相同。第7圖顯示夾具型基底載體20的蓋板20B放置在本體20A上之後，其結構的部分剖面示意圖。選擇夾具型基底載體20的本體20A之厚度，使得阻擋臂20B’的底部接觸基底40的頂部表面之邊緣部分，並因而將基底40的位置固定，使其無法垂直地與水平地移動。在後續的回焊製程之前，使用平台48預熱基底40，例如預熱至溫度低於100℃。
多頭加熱工具44的多個加熱頭46接觸晶片30的頂端表面，每個加熱頭46接觸一個晶片30，加熱頭46加熱晶片，使得焊料凸塊34/42熔融。
接著，參閱第8圖，加熱頭46釋放其底下個別的晶片30，例如藉由釋放真空的方式達成。此外，加熱頭46可在一段短時間內提起晶片30，並且不接觸晶片30。在一示範性實施例中，這段時間介於約1秒至2秒之間。在其他實施例中，這段時間介於約0.5秒至約4秒之間。在這段時間內，基底40仍然被阻擋臂20B’固定在原處，然而，因為焊料凸塊34/42為液態，晶片30在水平方向與垂直方向可以自由地稍微移動。因此，因為晶片30在水平方向可以移動，晶片30會自行對準其下方個別的基底40。
接著，如第9圖所示，將加熱頭46再次放置成與晶片30接觸，然後稍微地將晶片30提起，如箭頭47所示。在這些實施例中，因為阻擋臂20B’將基底40扣留在原處，基底40不會沿著水平以及/或垂直方向自由地移動。調整提起晶片30的距離，使得熔融的焊料凸塊34/42的高度調整至所需的數值，並且降低在相鄰的焊料凸塊34/42之間產生架橋的可能性。然後可將加熱頭46的溫度降低至低於焊料凸塊34/4的熔融溫度，並因此使熔融的焊料凸塊34/42固化，然後加熱頭46釋放個別的晶片30。
在一實施例中，藉由回焊模組進行回焊，其包含多頭加熱工具44以及平台48。在一實施例中，用於進行晶片黏著(第4圖)的晶片黏著模組以及用於進行回焊(第5A至9圖)的回焊模組是屬於相同TCB工具的不同工具模組。另外，晶片黏著模組與回焊模組可屬於不同的工具。
第10及11圖顯示使用多頭加熱工具44進行的兩個回焊製程，參閱第10圖，多頭加熱工具44包含兩個加熱頭46，並且因此可同時進行兩個晶片30的接合，在兩個晶片30的接合完成之後，可移動多頭加熱工具44至下兩個晶片30進行回焊，箭頭50顯示多頭加熱工具44可能的移動路徑。在第11圖中，多頭加熱工具44具有四個加熱頭46，並且因此可同時進行四個晶片30的接合，在四個晶片30的接合完成之後，可移動多頭加熱工具44至下四個晶片30，同樣地，箭頭50顯示多頭加熱工具44可能的移動路徑。在第10及11圖所示之示範性實施例中，夾具型基底載體20中工件支撐架的總數量為32，因此，多頭加熱工具44中加熱頭46的數量可以像32一樣多，並且也可以像2一樣少，或者可等於任何其他可應用的數量，例如2、4、8、12以及16。
由於加熱頭46(第5A及5B圖)不執行拾起與放置晶片30的工作，因此加熱頭46的溫度可保持在高溫。例如第12圖所示之加熱頭46的溫度曲線圖，在第一回焊製程的開始，加熱頭46的溫度為T1，其高於室溫，並且可高於約150℃，或甚至高於約180℃，溫度T1也低於焊料凸塊34/42的熔融溫度T0，其例如可為約220℃至約260℃。在第一回焊製程期間，加熱頭46的溫度升高至溫度T2，其高於溫度T0，並且足夠高至讓焊料凸塊34/42熔融。在第一回焊製程之後，加熱頭46的溫度降低，例如降回溫度T1，或甚至更低，在第一回焊製程中的溫度曲線圖可重複用在第二回焊製程以及額外的回焊製程。保持加熱頭46的溫度在高溫可減少溫度上升的時間與冷卻的時間，並因此也可改善TCB製程的生產率。在其他實施例中，於第一回焊製程之後，加熱頭46的溫度也可降回低溫，例如接近室溫。
藉由將晶片黏著製程與回焊製程分開在兩個獨立的工具模組中進行，可改善TCB接合的生產率。此外，使用多頭加熱工具可進一步地改善生產率。夾具型基底載體使得基底可以在水平方向移動，並且使得基底自行對準晶片，改善晶片與基底之間對準的準確度。
雖然本發明已揭露較佳實施例如上，然其並非用以限定本發明，在此技術領域中具有通常知識者當可瞭解，在不脫離本發明之精神和範圍內，當可做些許更動與潤飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定為準。
20．．．夾具型基底載體
20A．．．本體
20B．．．蓋板
20B’．．．阻擋臂
22．．．工件支撐架
24．．．開口
28．．．晶片黏著頭
30．．．晶片
32．．．晶圓
34．．．焊料凸塊
40．．．封裝基底
42．．．金屬凸塊
44．．．多頭加熱工具
45、48．．．平台
46．．．加熱頭
47．．．晶片提起的方向
49．．．封裝基底移動的方向
50．．．多頭加熱工具移動的路徑
第1及2圖分別顯示夾具型基底載體的本體與蓋板之透視圖。
第3圖顯示晶片黏著頭拾起晶片的示意圖。
第4圖顯示將晶片附著至封裝基底上的製程，其中封裝基底位於夾具型基底載體的工件支撐架內。
第5A與5B圖分別顯示在晶片與封裝基底之間的焊料凸塊進行回焊的透視圖與剖面示意圖，其中使用多頭加熱工具加熱焊料凸塊。
第6圖顯示藉由加熱工具提起晶片。
第7至9圖顯示依據其他實施例，在晶片與封裝基底之間的焊料凸塊進行回焊的中間階段之剖面示意圖。
第10及11圖分別顯示使用雙頭加熱工具及四頭加熱工具進行焊料凸塊的回焊。
第12圖顯示在多頭加熱工具內的加熱頭之溫度曲線圖。
20．．．夾具型基底載體
20A．．．本體
20B．．．蓋板
20B’．．．阻擋臂
24．．．開口
30．．．晶片(工件)
40．．．封裝基底(工件)
44．．．多頭加熱工具
46．．．加熱頭
47．．．提起晶片的方向
48．．．平台
49．．．封裝基底移動的方向

Claims (11)

  1. 一種接合的方法，包括：提供一第一工件；在該第一工件上附著一第二工件，具有一第一焊料凸塊介於該第一工件與該第二工件之間；使用一加熱工具的一加熱頭加熱該第二工件，使該第一焊料凸塊熔融；在加熱該第二工件的該步驟之後，允許該第一工件與該第二工件中的一個在一水平方向自由地移動，使該第一工件與該第二工件自行對準，其中允許該第一工件與該第二工件中的一個移動的該步驟包括從該加熱頭釋放該第二工件；以及在允許該第一工件與該第二工件中的一個移動的該步驟之後，降低該加熱頭的溫度，直到該第一焊料凸塊固化，形成一第二焊料凸塊。
  2. 如申請專利範圍第1項所述之接合的方法，其中允許該第一工件與該第二工件中的一個移動的該步驟更包括在釋放該第二工件的該步驟之後，使用該加熱頭將該第二工件提起，在提起的該步驟期間，該第一焊料凸塊被熔融，其中該第一工件被固定在原處，且不會與該第二工件一起移動。
  3. 如申請專利範圍第2項所述之接合的方法，其中在釋放該些第二工件的該步驟與提起該些第二工件的該步驟之間的一時間間隔為介於1秒至2秒之間，且在該時間間隔期間，該些第二工件自由地移動而不會被阻擋。
  4. 如申請專利範圍第1項所述之接合的方法，其中允許該第一工件與該第二工件中的一個移動的該步驟更包括：使用該加熱頭將該第二工件提起，該第一工件在該第二工件下方自由地懸掛；在提起該第二工件的該步驟之後，以及在降低該加熱頭溫度的該步驟之前，阻止該第一工件的一垂直的移動；以及在阻止該第一工件的該垂直的移動的該步驟之後，持續地提起該第二工件。
  5. 如申請專利範圍第1項所述之接合的方法，更包括在附著該第二工件的該步驟之前，將該第一工件放置在一夾具型基底載體內，該夾具型基底載體包括一主體，該主體更包括一工件支撐架，其中該第一工件放置在該工件支撐架內，且其中該夾具型基底載體包括複數個阻擋臂，直接延伸在該第一工件的一邊緣部分之上。
  6. 如申請專利範圍第5項所述之接合的方法，其中該夾具型基底載體包括：複數個工件支撐架；以及一蓋板，該蓋板包括一開口；其中該第一工件的一水平尺寸小於該工件支撐架的一個別的水平尺寸，且大於該開口的一個別的水平尺寸，且其中該第二工件的一水平尺寸小於該開口的該個別的水平尺寸。
  7. 一種接合的方法，包括： 提供一夾具型基底載體，包括複數個工件支撐架；將複數個第一工件放置於該些工件支撐架內，其中該些第一工件的複數個邊緣部分直接位於該夾具型基底載體的複數個阻擋臂下方，且與該些阻擋臂垂直地重疊；在該些第一工件上放置複數個第二工件，具有複數個焊料凸塊接合該些第二工件至該些第一工件；回焊該些焊料凸塊；在該些焊料凸塊熔融之後，將該些第二工件與在一熔融狀態的該些焊料凸塊一起提起，其中該些第一工件被提起，懸掛在該些第二工件下方，且其中該夾具型基底載體沒有被提起；以及降低該些焊料凸塊的一溫度至該些焊料凸塊的一熔融溫度之下。
  8. 如申請專利範圍第7項所述之接合的方法，其中在降低該些焊料凸塊的該溫度之該步驟的整個期間，該些第一工件懸掛在該些第二工件下方。
  9. 如申請專利範圍第7項所述之接合的方法，更包括在放置該些第一工件至該些工件支撐架內的該步驟之後，將該夾具型基底載體的一蓋板牢固在該夾具型基底載體的一主體之上，其中該些工件支撐架為該主體的一部分，且該蓋板的一部份作為該些阻擋臂。
  10. 如申請專利範圍第7項所述之接合的方法，更包括：在提起該些第二工件的該步驟之後，以及在降低該些焊料凸塊的該溫度的該步驟之前，使用該些阻擋臂阻 止該些第一工件的一垂直的移動；以及在阻止該些第一工件的該垂直的移動的該步驟之後，持續地提起該些第二工件。
  11. 如申請專利範圍第7項所述之接合的方法，其中回焊該些焊料凸塊的該步驟，以及降低該些焊料凸塊的該溫度之該步驟係使用一多頭加熱工具進行，該多頭加熱工具包括複數個加熱頭，每個該加熱頭接觸一個該第二工件。
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US8104666B1 (en) 2012-01-31
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TW201212135A (en) 2012-03-16
US8317077B2 (en) 2012-11-27
CN102386114B (zh) 2013-09-11

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