TWI493669B - 半導體元件的封裝方法及封裝用夾具 - Google Patents
半導體元件的封裝方法及封裝用夾具 Download PDFInfo
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Description
本發明係有關於半導體元件的封裝,特別有關於半導體元件的封裝方法及封裝用夾具。
覆晶(flip-chip)封裝技術包含將面朝下(亦即翻轉)的半導體晶片黏著在例如陶瓷基底或電路板的基底上,其使用導電凸塊產生直接的電性連接。覆晶封裝技術已經快速地取代舊的打線接合技術,打線接合技術是使用導線將面朝上的晶片之接合墊連接到基底。
覆晶封裝技術早期使用的製程包含多個步驟,這對其形成的封裝體會造成一些問題。早期製程中的一個製程包含以下連續的步驟:將晶粒(die)貼附至基底上,對晶粒與基底之間的連接部分進行回焊,在基底與晶粒之間塗佈底部填充劑,固化底部填充劑,塗佈壓模材料,固化壓膜材料,將球閘陣列(ball grid array;BGA)接合墊浸泡在助熔劑(flux)中,將錫球滴在BGA接合墊上,以及回焊錫球。在錫球滴下之前,這些繁複的製程步驟可能會對後續形成的錫球造成一些問題,例如,在先前步驟中所施加的熱、水分以及化學品,可能會對BGA接合墊造成污染和氧化,這會使得BGA接合墊上缺少錫球,或使得BGA接合墊上的錫球產生對位不準的問題。熱可能是由先前的回焊、烘烤以及/或固化等步驟所產生,水分可能是由助焊劑的清潔以及/或超音波掃瞄顯微鏡(Scanning Acoustic Tomography;C-SAM或T-SAM)的掃瞄模式所引起,而化學品則可能是來自助焊劑、助焊劑清潔溶劑、底部填充劑以及/或壓模化合物。
傳統的製程還會對封裝造成其他問題,例如,晶粒中的超低介電常數(extra low-k;ELK)介電層可能會因為傳統的製程而發生脫層,此外,底部填充劑的脫層也可能會發生。傳統的製程還可能會產生其他信賴性的疑慮,例如在晶粒上的凸塊內形成裂痕,預焊(pre-solder)的裂痕以及晶片的導通孔(via)燒毀。
在一實施例中,提供半導體元件的封裝方法,此方法包括:經由夾具的第一面,將晶片貼附至載體基板上,此晶片藉由多個凸塊而附著;經由夾具的第二面,將多個焊球施加至載體基板上的多個接合墊;以及將這些凸塊和焊球回焊。
在另一實施例中,提供半導體元件的封裝方法,此方法包括:使用多個凸塊將晶片耦接至載體基板,此耦接步驟經由在夾具蓋板內的第一視窗進行;將多個焊球施加至載體基板上的多個接合墊,此施加步驟經由在夾具基座內的第二視窗進行,將夾具的基座與來自夾具蓋板的載體基板相對設置;以及將這些凸塊和焊球回焊。
在又另一實施例中,提供封裝用夾具,此夾具包括:蓋板、基座以及連接器。蓋板具有貫穿蓋板的第一視窗,基座具有貫穿基座的第二視窗,第一視窗暴露出蓋板與基座中間體積的第一表面,第二視窗暴露出此體積的第二表面,第一表面與此體積的第二表面相對,連接器將蓋板與基座對準並連接。
為了讓本發明之上述目的、特徵、及優點能更明顯易懂,以下配合所附圖式,作詳細說明如下:
在此所揭示的實施例之製造與使用詳述如下,然而,可以理解的是,這些實施例提供許多可應用的發明概念,其可以在各種特定背景中實施,在此所討論的特定實施例僅用於說明這些實施例製造與使用的特定方式,並非用於限定本揭露的範圍。
在此所描述的實施例係有關於應用在特定的背景,即形成覆晶封裝的製造過程,例如覆晶球閘陣列(flip-chip ball grid array;FcBGA)或覆晶晶片級封裝(flip-chip chip scale package;FcCSP)。然而,也可以在其他的封裝製程上應用其他的實施例。
第1A至1C圖顯示夾具30(例如參閱第2A圖)的展開圖,夾具30在封裝製程的各步驟期間托住載體基板16並使其穩固。第1A圖顯示夾具30的上部蓋板10,上部蓋板10包含視窗12以及孔隙(apertures)14。第1B圖顯示包含晶片黏著區18和球閘陣列(BGA)區20(在第1B圖未繪出,參閱第2C圖)的載體基板16。第1C圖顯示夾具30的底部基座22,底部基座22包含視窗24以及導向裝置(guides)26。孔隙14和導向裝置26分別沿著上部蓋板10和底部基座22的週邊在相對應的位置上設置,當夾具30組裝在一起時,孔隙14會接收夾具30底部基座22的導向裝置26。當夾具30組裝時,上部蓋板10的視窗12以暴露出載體基板16的晶片黏著區18的方式排列。當夾具30組裝時,視窗24以暴露出載體基板16的球閘陣列(BGA)區20的方式排列。
第2A至2C圖顯示組裝後的夾具30之各種示意圖,第2A圖為夾具30的側視圖,夾具30包含上部蓋板10、底部基座22,以及在上部蓋板10和底部基座22中間的載體基板16,導向裝置26插入上部蓋板10的孔隙14中,使得上部蓋板10對準底部基座22。第2B圖為夾具30的上視圖,晶片黏著區18藉由上部蓋板10的個別視窗12暴露出來。第2C圖為夾具30的底部俯視圖,球閘陣列(BGA)區20藉由底部基座22的個別視窗24暴露出來。此外,在視窗12和24暴露出來的區域之週邊與個別的晶片黏著區18和球閘陣列(BGA)區20的週邊之間,可允許視窗12和24具有面積公差(tolerance)。在這些圖式所繪出的實施例中,每個視窗暴露出一個區域,在其他實施例中,一個視窗也可暴露出多個區域,例如多個晶片黏著區或多個球閘陣列(BGA)區。此外,上部蓋板以及/或底部基座大抵上可以是包括一個視窗的單一框架,其暴露的區域係暴露出載體基板的一側,在其他實施例中,可以考慮上部蓋板和底部基座的視窗之多種組合。雖然在圖中並未特別繪出,當夾具30組裝時,上部蓋板10和底部基座22的其中一個或兩者可具有凹陷,藉此將載體基板16架設在適當的對位位置。
在此實施例中,上部蓋板10和底部基座22由金屬材料製成,例如鋼鐵。在此實施例中,於導向裝置26或導向裝置26的基座上黏著磁鐵,藉此將上部蓋板10與底部基座22固定在一起,磁鐵可讓夾具牢固地組裝在一起,也可讓夾具輕易地拆開。其他實施例可使用不同的材料應用在上部蓋板10和底部基座22,並且可使用不同的元件或緊固物,例如使用螺絲釘或螺栓和螺帽,將上部蓋板10附著至底部基座22上。
載體基板16可使用任何可接受的基板材料,例如有機或陶瓷基板,並且可用任何可接受的方法形成。載體基板16通常包含凸塊墊片,例如在晶片黏著區18上,積體電路晶片上的凸塊黏著於其上。載體基板16通常包含內連線結構,其將凸塊墊片重分佈並耦接至球閘陣列(BGA)接合墊,例如在球閘陣列(BGA)區20內。在其他實施例的範圍內,也可以考慮其他狀態的載體基板。
第3至6C圖顯示覆晶封裝期間使用夾具30的方法之各種外觀,第3圖提供組裝後的夾具30,在上部蓋板10和底部基座22(參閱第2A圖)之間具有載體基板16,晶片32經由上部蓋板10的視窗12黏著至載體基板16的晶片黏著區18,晶片32藉由凸塊34與晶片黏著區18產生機械和電性的耦接,凸塊34可以是銅或銲錫,並且可包含凸塊、柱狀物或圓柱等形狀。可使用工具36,例如挑選和放置晶片的工具來黏著晶片32,晶片可以是經由可接受的半導體製程技術生產、由製程晶圓分割以及測試過的已知好的晶粒。
一旦晶片32黏著至載體基板16上,將夾具30翻轉,使得底部基座22面朝上,如第4圖所示。然後,參閱第5A、5B和5C圖,使用助焊劑塗佈機40和針頭42,將助焊劑46施加至球閘陣列(BGA)區20內的接合墊44上。第5B圖顯示夾具30的一部份50之剖面示意圖,其說明晶片32、凸塊34、BGA接合墊44、塗佈機40以及針頭42之間的關係。第5C圖詳細說明球閘陣列(BGA)區20內的BGA接合墊44上的助焊劑46之設置。參閱第6A、6B和6C圖,在底部基座22的視窗24暴露出來的球閘陣列(BGA)區20內的BGA接合墊44上形成BGA焊球52。第6B圖詳細說明在第5B圖所示之該部份50上形成BGA焊球52,第6C圖顯示形成有BGA焊球52的球閘陣列(BGA)區20。
凸塊34的焊料以及BGA焊球52同時進行回焊,藉此將凸塊34和BGA焊球52與載體基板16更永久地接合,並且將凸塊34與晶片32接合。然後,將夾具30拆開,並且將具有晶片32黏著在其上的載體基板16從夾具30移開。將底部填充劑材料,例如環氧化物,塗佈在晶片32與載體基板16之間,於底部填充劑固化之後,藉由壓模成型法(compression molding),在晶片32與載體基板16上方施加封裝材料,例如壓模化合物(molding compound)。在壓模材料固化之後,將包括晶片32的每個封裝體分割。
第7A至7D圖顯示在封裝製程的各步驟期間,用於托住和穩固載體基板16的夾具70(例如參閱第8A圖)之展開圖。第7A至7C圖分別與第1A至1C圖相同,因此省略第7A至7C圖的描述。第7D圖顯示基板支撐物60,基板支撐物60包括間隔物62,雖然可以用其他圖案排列間隔物62,但是間隔物62通常是以與底部基座的視窗24相同的圖案排列。在一些製程步驟,例如晶片32的黏著步驟期間,間隔物62通常配合視窗24,並經由視窗24接觸載體基板16,藉此對載體基板16提供額外的穩定度。基板支撐物60可以是橡膠或另一種材料,例如可吸收震動的材料。間隔物62的高度通常延伸至基板支撐物60上方,具有與貫穿視窗24的距離相同的距離,例如貫穿視窗24的底部基座22之厚度。因此,基板支撐物60能夠接觸組裝後的夾具70中的載體基板16。間隔物62的長度和寬度的方向平行於基板支撐物60的上表面,間隔物62的尺寸可以是任何數目,但通常不超過相對應的視窗24的尺寸,例如間隔物62的長度和寬度稍微小於相對應的視窗24的尺寸。雖然間隔物62繪製成立方形,但是在其他實施中,也可以使用其他一般形狀的間隔物,例如圓柱形或半球狀。
第8A至8C圖顯示組裝後的夾具70之各種示意圖,第8A圖為夾具70的側視圖,除了夾具70包含基板支撐物60之外,夾具70通常與第2A圖的夾具30相同。間隔物62以虛線顯示,其穿過底部基座22的視窗24,延伸至接觸載體基板16,並且支撐載體基板16。第8B圖為夾具70的上視圖,其與第2B圖相同。第8C圖為夾具70的底部俯視圖,其顯示出基板支撐物60。
第9和10圖顯示在覆晶封裝期間,使用夾具70的方法之另一實施例的各種外觀。與第3圖相似,首先提供組裝後的夾具70,其具有載體基板16、上部蓋板10、底部基座22以及基板支撐物60(參閱第8A圖)。晶片32經由上部蓋板10的視窗12,黏著至載體基板16的晶片黏著區18,一旦晶片32黏著至載體基板16後,將基板支撐物60移開,如第10圖所示。在夾具70中進行的製程如先前所討論,後續製程的進行則可以與第4至6C圖所討論的相同或相似。
第11圖係依據一實施例概述封裝製程,在步驟82,將載體基板放置在夾具內,例如第2A或8A圖所示,組裝的夾具30或70內具有載體基板16。如果使用載體基板支撐物,則在步驟84,經由夾具背面內的視窗放置載體基板支撐物,如第8A圖所示,經由底部基座22的視窗24放置基板支撐物60的間隔物62。在步驟86,具有凸塊的晶片經由夾具正面的視窗黏著至載體基板,如第3或9圖所示,經由夾具30或70的上部蓋板10之視窗12黏著具有凸塊34的晶片32。如果使用載體基板支撐物,則在步驟88,將載體基板支撐物移開,如第10圖所示,移開基板支撐物60。在步驟90,將夾具翻轉,使得其背面朝上,如第4圖所示之底部基座22面朝上。
在步驟92,經由夾具背面的視窗,對BGA接合墊施加助焊劑浸潤,例如第5A至5C圖所示,經由底部基座22的視窗24,使用助焊劑塗佈機40和針頭42,將助焊劑46施加至球閘陣列(BGA)區20內的接合墊44上。在步驟94,經由夾具背面的視窗,將BGA焊球施加至接合墊,例如第6A至6C圖所示,在底部基座22的視窗24暴露出的球閘陣列(BGA)區20內,形成BGA焊球52在BGA接合墊44上。在步驟96,對晶片上的凸塊與BGA焊球同時進行回焊,例如同時回焊晶片32上的凸塊34和BGA焊球52。在步驟98,從夾具移開載體基板和黏著的晶片,例如從上部蓋板10和底部基座22移開具有晶片32黏著的載體基板16。在步驟100,在載體基板與黏著的晶片之間塗佈底部填充劑,例如在載體基板16與晶片32之間塗佈底部填充劑。在步驟102,對載體基板和黏著的晶片施加封裝劑,例如使用壓模成型法施加壓模化合物。在步驟104,將載體基板和晶片分割成個別的封裝體。
相較於先前傳統的封裝製程,上述實施例可降低封裝製程的循環時間以及減少生產良率的損失。例如,使用上述的夾具與製程,循環時間可降低一至兩天或可能更多天。此外,使用上述的夾具與製程也可以消除對所有的回焊機台設置針頭,而只在一個回焊機台設置需要的針頭,進而可降低設備成本。另外,藉由對凸塊和BGA焊球同時進行回焊,可以避免對晶片以及/或封裝體造成的一些損壞,進而增加生產良率。例如,同時回焊的製程可形成與先前傳統的方法相似的凸塊和焊球,並且藉由減少回焊步驟使用的次數,以及/或應用例如在回焊後進行底部填充的步驟,可以避免晶片上的超低介電常數介電層脫層、底部填充劑脫層、凸塊裂痕、預焊裂痕以及晶片導通孔燒毀的問題發生。此外,在施加BGA焊球之前避免進行多個製程步驟,可以避免BGA接合墊的氧化和污染發生。
雖然本發明已揭露較佳實施例如上,然其並非用以限定本發明,在此技術領域中具有通常知識者當可瞭解,在不脫離本發明之精神和範圍內,當可做些許更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定為準。
10...上部蓋板
12...上部蓋板的視窗
14...上部蓋板的孔隙
16...載體基板
18‧‧‧晶片黏著區
20‧‧‧球閘陣列(BGA)區
22‧‧‧底部基座
24‧‧‧底部基座的視窗
26‧‧‧導向裝置
30、70‧‧‧夾具
32‧‧‧晶片
34‧‧‧凸塊
36‧‧‧工具
40‧‧‧助焊劑塗佈機
42‧‧‧針頭
44‧‧‧接合墊
46‧‧‧助焊劑
50‧‧‧夾具30的一部份
52‧‧‧焊球
60‧‧‧基板支撐物
62‧‧‧間隔物
82、84、86、88、90、92、94、96、98、100、102、104‧‧‧封裝製程的各步驟
第1A至1C圖係顯示依據一實施例,在封裝製程的各步驟期間所使用的夾具之展開圖。
第2A至2C圖係顯示依據一實施例,由第1A至1C圖組裝後的夾具之各種示意圖。
第3、4、5A-5C、6A-6C圖係顯示依據一實施例,在覆晶封裝期間使用夾具的方法之各種外觀。
第7A至7D圖係顯示依據一實施例,在封裝製程的各步驟期間所使用的另一夾具之展開圖。
第8A至8C圖係顯示依據一實施例,由第7A至7C圖組裝後的夾具之各種示意圖。
第9和10圖係顯示依據一實施例,在覆晶封裝期間使用第8A至8C圖的夾具之方法的各種外觀。
第11圖係顯示依據一實施例,封裝製程的流程圖。
10...上部蓋板
12...上部蓋板的視窗
14...上部蓋板的孔隙
16...載體基板
18...晶片黏著區
22...底部基座
24...底部基座的視窗
26...導向裝置
Claims (9)
- 一種半導體元件的封裝方法,包括:經由一夾具的一第一面,將一晶片附著至一載體基板上,其中該晶片藉由複數個凸塊而附著;經由該夾具的一第二面,將複數個焊球施加至該載體基板上的複數個接合墊;將該些凸塊和該些焊球回焊;在回焊該些凸塊和該些焊球之後,密封該晶片;以及在回焊該些凸塊和該些焊球之後和密封該晶片之前將該載體基板從該夾具移開。
- 如申請專利範圍第1項所述之半導體元件的封裝方法,更包括經由該夾具的該第二面放置一基板支撐物,其中在將該晶片附著至該載體基板的期間,經由該第二面放置該基板支撐物。
- 如申請專利範圍第2項所述之半導體元件的封裝方法,其中該基板支撐物包括橡膠。
- 如申請專利範圍第1項所述之半導體元件的封裝方法,更包括:在該夾具的該第一面與該夾具的該第二面之間放置該載體基板;以及將該夾具的該第一面固定至該夾具的該第二面,其中該固定步驟包括使用磁鐵。
- 如申請專利範圍第1項所述之半導體元件的封裝方法,其中回焊該些凸塊和回焊該些焊球的步驟同時進 行。
- 如申請專利範圍第1項所述之半導體元件的封裝方法,更包括:在該載體基板與該晶片之間塗佈底部填充劑;以及將該載體基板分割。
- 如申請專利範圍第1項所述之半導體元件的封裝方法,其中:經由該夾具的該第一面附著該晶片的該步驟是經由在該夾具的該第一面內的一第一視窗進行,該第一視窗暴露出該載體基板的一晶片黏著區;以及經由該夾具的該第二面施加該些焊球至該些接合墊的該步驟是經由在該夾具的該第二面內的一第二視窗進行,該第二視窗暴露出包括該些接合墊的一陣列區。
- 一種封裝用夾具,包括:一蓋板,具有一第一視窗貫穿該蓋板;一基座,具有一第二視窗貫穿該基座,該第一視窗暴露出在該蓋板與該基座中間的一體積的一第一表面,該第二視窗暴露出該體積的一第二表面,該第一表面與來自該體積的該第二表面相對;一連接器,將該蓋板與該基座對準並連接;以及一支撐物,貫穿該第二視窗。
- 如申請專利範圍第8項所述之封裝用夾具,其中該連接器包括:一導向裝置,被接收在一孔隙中;以及一磁鐵,將該蓋板固定至該基座,其中該導向裝置 位在該基座上,且該孔隙位於該蓋板內。
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Also Published As
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CN102800600B (zh) | 2015-12-09 |
TW201248807A (en) | 2012-12-01 |
US8691629B2 (en) | 2014-04-08 |
CN102800600A (zh) | 2012-11-28 |
US20120302008A1 (en) | 2012-11-29 |
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