TWI411106B - 非對稱半導體裝置中用於增強效能之方法及設備 - Google Patents

非對稱半導體裝置中用於增強效能之方法及設備 Download PDF

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Publication number
TWI411106B
TWI411106B TW094126428A TW94126428A TWI411106B TW I411106 B TWI411106 B TW I411106B TW 094126428 A TW094126428 A TW 094126428A TW 94126428 A TW94126428 A TW 94126428A TW I411106 B TWI411106 B TW I411106B
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TW
Taiwan
Prior art keywords
region
current
semiconductor device
semiconductor
alloy
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Application number
TW094126428A
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English (en)
Chinese (zh)
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TW200629540A (en
Inventor
歐洛斯基 瑪里雅斯Ｋ
亞當斯 凡斯Ｈ
劉忠立
溫斯提 布萊恩Ａ
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飛思卡爾半導體公司
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Application filed by 飛思卡爾半導體公司 filed Critical 飛思卡爾半導體公司
Publication of TW200629540A publication Critical patent/TW200629540A/zh
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Publication of TWI411106B publication Critical patent/TWI411106B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
TW094126428A 2004-08-24 2005-08-03 非對稱半導體裝置中用於增強效能之方法及設備 TWI411106B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/924,650 US7166897B2 (en) 2004-08-24 2004-08-24 Method and apparatus for performance enhancement in an asymmetrical semiconductor device

Publications (2)

Publication Number Publication Date
TW200629540A TW200629540A (en) 2006-08-16
TWI411106B true TWI411106B (zh) 2013-10-01

Family

ID=35941869

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094126428A TWI411106B (zh) 2004-08-24 2005-08-03 非對稱半導體裝置中用於增強效能之方法及設備

Country Status (6)

Country Link
US (1) US7166897B2 (https=)
JP (1) JP2008511169A (https=)
KR (1) KR101174994B1 (https=)
CN (1) CN100502032C (https=)
TW (1) TWI411106B (https=)
WO (1) WO2006023183A2 (https=)

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US8928094B2 (en) 2010-09-03 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strained asymmetric source/drain
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CN103377940B (zh) * 2012-04-25 2016-08-31 中芯国际集成电路制造(上海)有限公司 一种用于sram的p型传输栅极晶体管及其制作方法
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CN103426756B (zh) * 2012-05-15 2016-02-10 中国科学院微电子研究所 半导体器件及其制造方法
US8836041B2 (en) * 2012-11-16 2014-09-16 Stmicroelectronics, Inc. Dual EPI CMOS integration for planar substrates
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US9525027B2 (en) * 2014-03-13 2016-12-20 Globalfoundries Inc. Lateral bipolar junction transistor having graded SiGe base
US9391204B1 (en) * 2015-03-12 2016-07-12 International Business Machines Corporation Asymmetric FET
US10026830B2 (en) * 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
WO2017111874A1 (en) * 2015-12-23 2017-06-29 Intel Corporation Dual threshold voltage (vt) channel devices and their methods of fabrication
WO2018063335A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing carbon-based etch stop layer
WO2018063333A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions processed through contact trenches
WO2018063315A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing contact resistance reducing layer
WO2018063310A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing different semiconductor material
CN108122973B (zh) * 2016-11-28 2020-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、以及sram
JP2018125518A (ja) * 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
CN108417489B (zh) * 2017-02-10 2020-11-27 中芯国际集成电路制造(上海)有限公司 Sram存储器及其形成方法
CN108470734A (zh) * 2017-02-23 2018-08-31 中芯国际集成电路制造(上海)有限公司 Sram存储器及其形成方法
CN108987399A (zh) * 2017-06-05 2018-12-11 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
TWI788487B (zh) 2018-12-21 2023-01-01 聯華電子股份有限公司 半導體元件
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Also Published As

Publication number Publication date
KR20070051866A (ko) 2007-05-18
CN100502032C (zh) 2009-06-17
JP2008511169A (ja) 2008-04-10
TW200629540A (en) 2006-08-16
WO2006023183A3 (en) 2006-05-04
US20060043498A1 (en) 2006-03-02
US7166897B2 (en) 2007-01-23
WO2006023183A2 (en) 2006-03-02
CN101002328A (zh) 2007-07-18
KR101174994B1 (ko) 2012-08-17

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