KR101174994B1 - 비대칭 반도체 소자의 성능 향상을 위한 방법 및 장치 - Google Patents

비대칭 반도체 소자의 성능 향상을 위한 방법 및 장치 Download PDF

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KR101174994B1
KR101174994B1 KR1020077004356A KR20077004356A KR101174994B1 KR 101174994 B1 KR101174994 B1 KR 101174994B1 KR 1020077004356 A KR1020077004356 A KR 1020077004356A KR 20077004356 A KR20077004356 A KR 20077004356A KR 101174994 B1 KR101174994 B1 KR 101174994B1
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KR20070051866A (ko
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마리어스 케이. 오르로스키
밴스 에이치. 아담스
천-리 리우
브라이언 에이. 윈스테드
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프리스케일 세미컨덕터, 인크.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
KR1020077004356A 2004-08-24 2005-07-15 비대칭 반도체 소자의 성능 향상을 위한 방법 및 장치 Expired - Fee Related KR101174994B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/924,650 US7166897B2 (en) 2004-08-24 2004-08-24 Method and apparatus for performance enhancement in an asymmetrical semiconductor device
US10/924,650 2004-08-24

Publications (2)

Publication Number Publication Date
KR20070051866A KR20070051866A (ko) 2007-05-18
KR101174994B1 true KR101174994B1 (ko) 2012-08-17

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KR1020077004356A Expired - Fee Related KR101174994B1 (ko) 2004-08-24 2005-07-15 비대칭 반도체 소자의 성능 향상을 위한 방법 및 장치

Country Status (6)

Country Link
US (1) US7166897B2 (https=)
JP (1) JP2008511169A (https=)
KR (1) KR101174994B1 (https=)
CN (1) CN100502032C (https=)
TW (1) TWI411106B (https=)
WO (1) WO2006023183A2 (https=)

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CN103426756B (zh) * 2012-05-15 2016-02-10 中国科学院微电子研究所 半导体器件及其制造方法
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US9525027B2 (en) * 2014-03-13 2016-12-20 Globalfoundries Inc. Lateral bipolar junction transistor having graded SiGe base
US9391204B1 (en) * 2015-03-12 2016-07-12 International Business Machines Corporation Asymmetric FET
US10026830B2 (en) * 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
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WO2018063333A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions processed through contact trenches
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JP2018125518A (ja) * 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
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Also Published As

Publication number Publication date
KR20070051866A (ko) 2007-05-18
TWI411106B (zh) 2013-10-01
CN100502032C (zh) 2009-06-17
JP2008511169A (ja) 2008-04-10
TW200629540A (en) 2006-08-16
WO2006023183A3 (en) 2006-05-04
US20060043498A1 (en) 2006-03-02
US7166897B2 (en) 2007-01-23
WO2006023183A2 (en) 2006-03-02
CN101002328A (zh) 2007-07-18

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