JP2008511169A - 非対称半導体装置の性能を向上させる方法及び装置 - Google Patents

非対称半導体装置の性能を向上させる方法及び装置 Download PDF

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Publication number
JP2008511169A
JP2008511169A JP2007529858A JP2007529858A JP2008511169A JP 2008511169 A JP2008511169 A JP 2008511169A JP 2007529858 A JP2007529858 A JP 2007529858A JP 2007529858 A JP2007529858 A JP 2007529858A JP 2008511169 A JP2008511169 A JP 2008511169A
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semiconductor device
semiconductor
current
alloy
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Japanese (ja)
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JP2008511169A5 (https=
Inventor
ケイ． オーロースキー、マリウス
エイチ． アダムス、ヴァンス
リュウ、チュンーリ
エイ． ウィンステッド、ブライアン
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NXP USA Inc
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NXP USA Inc
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Publication of JP2008511169A publication Critical patent/JP2008511169A/ja
Publication of JP2008511169A5 publication Critical patent/JP2008511169A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2007529858A 2004-08-24 2005-07-15 非対称半導体装置の性能を向上させる方法及び装置 Pending JP2008511169A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/924,650 US7166897B2 (en) 2004-08-24 2004-08-24 Method and apparatus for performance enhancement in an asymmetrical semiconductor device
PCT/US2005/025535 WO2006023183A2 (en) 2004-08-24 2005-07-15 Method and apparatus for performance enhancement in an asymmetrical semiconductor device

Publications (2)

Publication Number Publication Date
JP2008511169A true JP2008511169A (ja) 2008-04-10
JP2008511169A5 JP2008511169A5 (https=) 2008-09-04

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Family Applications (1)

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JP2007529858A Pending JP2008511169A (ja) 2004-08-24 2005-07-15 非対称半導体装置の性能を向上させる方法及び装置

Country Status (6)

Country Link
US (1) US7166897B2 (https=)
JP (1) JP2008511169A (https=)
KR (1) KR101174994B1 (https=)
CN (1) CN100502032C (https=)
TW (1) TWI411106B (https=)
WO (1) WO2006023183A2 (https=)

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JP2009010111A (ja) * 2007-06-27 2009-01-15 Sony Corp 半導体装置および半導体装置の製造方法
JP2011054972A (ja) * 2009-09-03 2011-03-17 Internatl Business Mach Corp <Ibm> 集積回路構造及びその製造方法
JP5396268B2 (ja) * 2007-03-28 2014-01-22 ルネサスエレクトロニクス株式会社 半導体装置

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US7943471B1 (en) * 2006-05-15 2011-05-17 Globalfoundries Inc. Diode with asymmetric silicon germanium anode
US7799644B2 (en) * 2006-07-28 2010-09-21 Freescale Semiconductor, Inc. Transistor with asymmetry for data storage circuitry
US7741658B2 (en) * 2007-08-21 2010-06-22 International Business Machines Corporation Self-aligned super stressed PFET
JP2009164364A (ja) * 2008-01-08 2009-07-23 Renesas Technology Corp 半導体装置およびその製造方法
US8384122B1 (en) * 2008-04-17 2013-02-26 The Regents Of The University Of California Tunneling transistor suitable for low voltage operation
US7964465B2 (en) * 2008-04-17 2011-06-21 International Business Machines Corporation Transistors having asymmetric strained source/drain portions
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
US8928094B2 (en) 2010-09-03 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strained asymmetric source/drain
US8637871B2 (en) * 2010-11-04 2014-01-28 International Business Machines Corporation Asymmetric hetero-structure FET and method of manufacture
CN103377940B (zh) * 2012-04-25 2016-08-31 中芯国际集成电路制造(上海)有限公司 一种用于sram的p型传输栅极晶体管及其制作方法
US10103226B2 (en) * 2012-04-30 2018-10-16 International Business Machines Corporation Method of fabricating tunnel transistors with abrupt junctions
CN103426756B (zh) * 2012-05-15 2016-02-10 中国科学院微电子研究所 半导体器件及其制造方法
US8836041B2 (en) * 2012-11-16 2014-09-16 Stmicroelectronics, Inc. Dual EPI CMOS integration for planar substrates
EP3061124A4 (en) * 2013-09-26 2017-04-26 Intel Corporation Vertical non-planar semiconductor device for system-on-chip (soc) applications
US9525027B2 (en) * 2014-03-13 2016-12-20 Globalfoundries Inc. Lateral bipolar junction transistor having graded SiGe base
US9391204B1 (en) * 2015-03-12 2016-07-12 International Business Machines Corporation Asymmetric FET
US10026830B2 (en) * 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
WO2017111874A1 (en) * 2015-12-23 2017-06-29 Intel Corporation Dual threshold voltage (vt) channel devices and their methods of fabrication
WO2018063335A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing carbon-based etch stop layer
WO2018063333A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions processed through contact trenches
WO2018063315A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing contact resistance reducing layer
WO2018063310A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing different semiconductor material
CN108122973B (zh) * 2016-11-28 2020-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、以及sram
JP2018125518A (ja) * 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
CN108417489B (zh) * 2017-02-10 2020-11-27 中芯国际集成电路制造(上海)有限公司 Sram存储器及其形成方法
CN108470734A (zh) * 2017-02-23 2018-08-31 中芯国际集成电路制造(上海)有限公司 Sram存储器及其形成方法
CN108987399A (zh) * 2017-06-05 2018-12-11 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
TWI788487B (zh) 2018-12-21 2023-01-01 聯華電子股份有限公司 半導體元件
US11201246B2 (en) 2019-11-12 2021-12-14 International Business Machines Corporation Field-effect transistor structure and fabrication method
US11621340B2 (en) * 2019-11-12 2023-04-04 International Business Machines Corporation Field-effect transistor structure and fabrication method

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JP2004146847A (ja) * 2003-12-24 2004-05-20 Toshiba Corp 半導体装置及びその製造方法

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JP2000286420A (ja) * 1999-03-30 2000-10-13 Canon Inc 絶縁ゲート型トランジスタの製造方法および絶縁ゲート型トランジスタ
JP2001284598A (ja) * 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置及びその製造方法
JP2002134741A (ja) * 2000-10-20 2002-05-10 Seiko Epson Corp 半導体装置とその製造方法
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JP5396268B2 (ja) * 2007-03-28 2014-01-22 ルネサスエレクトロニクス株式会社 半導体装置
US8809939B2 (en) 2007-03-28 2014-08-19 Renesas Electronics Corporation Semiconductor device
JP2009010111A (ja) * 2007-06-27 2009-01-15 Sony Corp 半導体装置および半導体装置の製造方法
US8486793B2 (en) 2007-06-27 2013-07-16 Sony Corporation Method for manufacturing semiconductor device with semiconductor materials with different lattice constants
US9070704B2 (en) 2007-06-27 2015-06-30 Sony Corporation Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
US9356146B2 (en) 2007-06-27 2016-05-31 Sony Corporation Semiconductor device with recess, epitaxial source/drain region and diffuson
US12295157B2 (en) 2007-06-27 2025-05-06 Sony Corporation Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion
JP2011054972A (ja) * 2009-09-03 2011-03-17 Internatl Business Mach Corp <Ibm> 集積回路構造及びその製造方法

Also Published As

Publication number Publication date
KR20070051866A (ko) 2007-05-18
TWI411106B (zh) 2013-10-01
CN100502032C (zh) 2009-06-17
TW200629540A (en) 2006-08-16
WO2006023183A3 (en) 2006-05-04
US20060043498A1 (en) 2006-03-02
US7166897B2 (en) 2007-01-23
WO2006023183A2 (en) 2006-03-02
CN101002328A (zh) 2007-07-18
KR101174994B1 (ko) 2012-08-17

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