CN100502032C - 用于不对称半导体器件性能增强的方法和设备 - Google Patents

用于不对称半导体器件性能增强的方法和设备 Download PDF

Info

Publication number
CN100502032C
CN100502032C CNB2005800272611A CN200580027261A CN100502032C CN 100502032 C CN100502032 C CN 100502032C CN B2005800272611 A CNB2005800272611 A CN B2005800272611A CN 200580027261 A CN200580027261 A CN 200580027261A CN 100502032 C CN100502032 C CN 100502032C
Authority
CN
China
Prior art keywords
region
current
semiconductor
alloy
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005800272611A
Other languages
English (en)
Chinese (zh)
Other versions
CN101002328A (zh
Inventor
马里乌斯·K·奥尔沃夫斯基
万司·H·亚当斯
刘春丽
布赖恩·A·温斯特德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN101002328A publication Critical patent/CN101002328A/zh
Application granted granted Critical
Publication of CN100502032C publication Critical patent/CN100502032C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/021—Forming source or drain recesses by etching e.g. recessing by etching and then refilling

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CNB2005800272611A 2004-08-24 2005-07-15 用于不对称半导体器件性能增强的方法和设备 Expired - Fee Related CN100502032C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/924,650 US7166897B2 (en) 2004-08-24 2004-08-24 Method and apparatus for performance enhancement in an asymmetrical semiconductor device
US10/924,650 2004-08-24

Publications (2)

Publication Number Publication Date
CN101002328A CN101002328A (zh) 2007-07-18
CN100502032C true CN100502032C (zh) 2009-06-17

Family

ID=35941869

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800272611A Expired - Fee Related CN100502032C (zh) 2004-08-24 2005-07-15 用于不对称半导体器件性能增强的方法和设备

Country Status (6)

Country Link
US (1) US7166897B2 (https=)
JP (1) JP2008511169A (https=)
KR (1) KR101174994B1 (https=)
CN (1) CN100502032C (https=)
TW (1) TWI411106B (https=)
WO (1) WO2006023183A2 (https=)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2868207B1 (fr) * 2004-03-25 2006-09-08 Commissariat Energie Atomique Transistor a effet de champ a materiaux de source, de drain et de canal adaptes et circuit integre comportant un tel transistor
KR100642747B1 (ko) * 2004-06-22 2006-11-10 삼성전자주식회사 Ｃｍｏｓ 트랜지스터의 제조방법 및 그에 의해 제조된ｃｍｏｓ 트랜지스터
US20070090406A1 (en) * 2005-10-26 2007-04-26 International Business Machines Corporation Structure and method for manufacturing high performance and low leakage field effect transistor
US8441000B2 (en) 2006-02-01 2013-05-14 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US7943471B1 (en) * 2006-05-15 2011-05-17 Globalfoundries Inc. Diode with asymmetric silicon germanium anode
US7799644B2 (en) * 2006-07-28 2010-09-21 Freescale Semiconductor, Inc. Transistor with asymmetry for data storage circuitry
US8809939B2 (en) 2007-03-28 2014-08-19 Renesas Electronics Corporation Semiconductor device
JP5286701B2 (ja) 2007-06-27 2013-09-11 ソニー株式会社 半導体装置および半導体装置の製造方法
US7741658B2 (en) * 2007-08-21 2010-06-22 International Business Machines Corporation Self-aligned super stressed PFET
JP2009164364A (ja) * 2008-01-08 2009-07-23 Renesas Technology Corp 半導体装置およびその製造方法
US8384122B1 (en) * 2008-04-17 2013-02-26 The Regents Of The University Of California Tunneling transistor suitable for low voltage operation
US7964465B2 (en) * 2008-04-17 2011-06-21 International Business Machines Corporation Transistors having asymmetric strained source/drain portions
US20110049582A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Asymmetric source and drain stressor regions
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
US8928094B2 (en) 2010-09-03 2015-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Strained asymmetric source/drain
US8637871B2 (en) * 2010-11-04 2014-01-28 International Business Machines Corporation Asymmetric hetero-structure FET and method of manufacture
CN103377940B (zh) * 2012-04-25 2016-08-31 中芯国际集成电路制造(上海)有限公司 一种用于sram的p型传输栅极晶体管及其制作方法
US10103226B2 (en) * 2012-04-30 2018-10-16 International Business Machines Corporation Method of fabricating tunnel transistors with abrupt junctions
CN103426756B (zh) * 2012-05-15 2016-02-10 中国科学院微电子研究所 半导体器件及其制造方法
US8836041B2 (en) * 2012-11-16 2014-09-16 Stmicroelectronics, Inc. Dual EPI CMOS integration for planar substrates
EP3061124A4 (en) * 2013-09-26 2017-04-26 Intel Corporation Vertical non-planar semiconductor device for system-on-chip (soc) applications
US9525027B2 (en) * 2014-03-13 2016-12-20 Globalfoundries Inc. Lateral bipolar junction transistor having graded SiGe base
US9391204B1 (en) * 2015-03-12 2016-07-12 International Business Machines Corporation Asymmetric FET
US10026830B2 (en) * 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
WO2017111874A1 (en) * 2015-12-23 2017-06-29 Intel Corporation Dual threshold voltage (vt) channel devices and their methods of fabrication
WO2018063335A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing carbon-based etch stop layer
WO2018063333A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions processed through contact trenches
WO2018063315A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing contact resistance reducing layer
WO2018063310A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Tunneling transistors including source/drain regions employing different semiconductor material
CN108122973B (zh) * 2016-11-28 2020-06-09 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法、以及sram
JP2018125518A (ja) * 2017-02-03 2018-08-09 ソニーセミコンダクタソリューションズ株式会社 トランジスタ、製造方法
CN108417489B (zh) * 2017-02-10 2020-11-27 中芯国际集成电路制造(上海)有限公司 Sram存储器及其形成方法
CN108470734A (zh) * 2017-02-23 2018-08-31 中芯国际集成电路制造(上海)有限公司 Sram存储器及其形成方法
CN108987399A (zh) * 2017-06-05 2018-12-11 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
TWI788487B (zh) 2018-12-21 2023-01-01 聯華電子股份有限公司 半導體元件
US11201246B2 (en) 2019-11-12 2021-12-14 International Business Machines Corporation Field-effect transistor structure and fabrication method
US11621340B2 (en) * 2019-11-12 2023-04-04 International Business Machines Corporation Field-effect transistor structure and fabrication method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040061191A1 (en) * 2002-09-30 2004-04-01 Advanced Micro Devices, Inc. Mosfets incorporating nickel germanosilicided gate and methods for their formation
US20040084735A1 (en) * 2001-11-01 2004-05-06 Anand Murthy Semiconductor transistor having a stressed channel

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3144032B2 (ja) * 1992-03-30 2001-03-07 ソニー株式会社 薄膜トランジスタ及びその製造方法
US5789306A (en) 1996-04-18 1998-08-04 Micron Technology, Inc. Dual-masked field isolation
US5849440A (en) 1996-07-02 1998-12-15 Motorola, Inc. Process for producing and inspecting a lithographic reticle and fabricating semiconductor devices using same
US5858830A (en) 1997-06-12 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making dual isolation regions for logic and embedded memory devices
JP2000286420A (ja) * 1999-03-30 2000-10-13 Canon Inc 絶縁ゲート型トランジスタの製造方法および絶縁ゲート型トランジスタ
US6197632B1 (en) 1999-11-16 2001-03-06 International Business Machines Corporation Method for dual sidewall oxidation in high density, high performance DRAMS
JP2001284598A (ja) * 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置及びその製造方法
US6541382B1 (en) 2000-04-17 2003-04-01 Taiwan Semiconductor Manufacturing Company Lining and corner rounding method for shallow trench isolation
JP2002134741A (ja) * 2000-10-20 2002-05-10 Seiko Epson Corp 半導体装置とその製造方法
US7312485B2 (en) 2000-11-29 2007-12-25 Intel Corporation CMOS fabrication process utilizing special transistor orientation
US6605498B1 (en) 2002-03-29 2003-08-12 Intel Corporation Semiconductor transistor having a backfilled channel material
JP3963462B2 (ja) * 2003-12-24 2007-08-22 株式会社東芝 半導体装置の製造方法
US7413957B2 (en) * 2004-06-24 2008-08-19 Applied Materials, Inc. Methods for forming a transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084735A1 (en) * 2001-11-01 2004-05-06 Anand Murthy Semiconductor transistor having a stressed channel
US20040061191A1 (en) * 2002-09-30 2004-04-01 Advanced Micro Devices, Inc. Mosfets incorporating nickel germanosilicided gate and methods for their formation

Also Published As

Publication number Publication date
KR20070051866A (ko) 2007-05-18
TWI411106B (zh) 2013-10-01
JP2008511169A (ja) 2008-04-10
TW200629540A (en) 2006-08-16
WO2006023183A3 (en) 2006-05-04
US20060043498A1 (en) 2006-03-02
US7166897B2 (en) 2007-01-23
WO2006023183A2 (en) 2006-03-02
CN101002328A (zh) 2007-07-18
KR101174994B1 (ko) 2012-08-17

Similar Documents

Publication Publication Date Title
CN100502032C (zh) 用于不对称半导体器件性能增强的方法和设备
CN100428475C (zh) 具有提高的载流子迁移率的半导体结构及其制造方法
US7872311B2 (en) Method and apparatus for mobility enhancement in a semiconductor device
US7494902B2 (en) Method of fabricating a strained multi-gate transistor
US7902008B2 (en) Methods for fabricating a stressed MOS device
US8809939B2 (en) Semiconductor device
US8062938B2 (en) Semiconductor device and method of fabricating the same
US9178068B1 (en) FinFET with oxidation-induced stress
CN100397659C (zh) 具混成应变诱导层的应变晶体管及其形成方法
US20060237746A1 (en) GeSOI transistor with low junction current and low junction capacitance and method for making the same
JP2008504677A (ja) 改良した歪みシリコンｃｍｏｓデバイスおよび方法
CN101523608A (zh) 包括双应力源的n沟道mosfet及其制造方法
JP4481181B2 (ja) 半導体装置およびその製造方法
JP4930375B2 (ja) 半導体装置及びその製造方法
US8030148B2 (en) Structured strained substrate for forming strained transistors with reduced thickness of active layer
US10263110B2 (en) Method of forming strained MOS transistors
TW200539425A (en) Integrated circuit with strained and non-strained transistors, and method of forming thereof
CN101326631A (zh) 互补金属氧化物半导体
CN101079445B (zh) 半导体器件及其制造方法
US7863141B2 (en) Integration for buried epitaxial stressor
US8440539B2 (en) Isolation trench processing for strain control
JP2008053403A (ja) 半導体装置および半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090617

Termination date: 20190715