TWI351568B - Display device - Google Patents

Display device Download PDF

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Publication number
TWI351568B
TWI351568B TW095147847A TW95147847A TWI351568B TW I351568 B TWI351568 B TW I351568B TW 095147847 A TW095147847 A TW 095147847A TW 95147847 A TW95147847 A TW 95147847A TW I351568 B TWI351568 B TW I351568B
Authority
TW
Taiwan
Prior art keywords
region
semiconductor layer
display device
light shielding
line
Prior art date
Application number
TW095147847A
Other languages
English (en)
Chinese (zh)
Other versions
TW200730983A (en
Inventor
Yasuo Segawa
Tomohide Onogi
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200730983A publication Critical patent/TW200730983A/zh
Application granted granted Critical
Publication of TWI351568B publication Critical patent/TWI351568B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095147847A 2006-01-11 2006-12-20 Display device TWI351568B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006003484A JP2007188936A (ja) 2006-01-11 2006-01-11 表示装置

Publications (2)

Publication Number Publication Date
TW200730983A TW200730983A (en) 2007-08-16
TWI351568B true TWI351568B (en) 2011-11-01

Family

ID=38232426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095147847A TWI351568B (en) 2006-01-11 2006-12-20 Display device

Country Status (5)

Country Link
US (1) US8174633B2 (enExample)
JP (1) JP2007188936A (enExample)
KR (2) KR100846543B1 (enExample)
CN (2) CN100559596C (enExample)
TW (1) TWI351568B (enExample)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007188936A (ja) * 2006-01-11 2007-07-26 Epson Imaging Devices Corp 表示装置
JP4179393B2 (ja) * 2006-09-14 2008-11-12 エプソンイメージングデバイス株式会社 表示装置及びその製造方法
KR100864886B1 (ko) * 2007-03-28 2008-10-22 삼성에스디아이 주식회사 평판 표시장치 및 그 제조방법
KR20090011261A (ko) * 2007-07-25 2009-02-02 삼성전자주식회사 표시장치용 어레이 기판 및 이의 제조 방법
KR101296657B1 (ko) * 2007-09-13 2013-08-14 엘지디스플레이 주식회사 유기전계발광소자 및 그 제조방법
US8927970B2 (en) * 2007-09-13 2015-01-06 Lg Display Co., Ltd. Organic electroluminescence device and method for manufacturing the same
JP2009076536A (ja) * 2007-09-19 2009-04-09 Mitsubishi Electric Corp Ａｌ合金膜、電子デバイス及び電気光学表示装置用アクティブマトリックス基板
KR101427581B1 (ko) * 2007-11-09 2014-08-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
CN101493613B (zh) * 2008-01-24 2012-12-12 统宝光电股份有限公司 液晶显示面板及应用该液晶显示面板的影像显示系统
EP2455802A4 (en) * 2009-07-15 2013-01-16 Sharp Kk LIQUID CRYSTAL DISPLAY DEVICE
KR101084278B1 (ko) * 2009-11-05 2011-11-16 삼성모바일디스플레이주식회사 표시장치 및 표시장치의 제조방법
WO2011122352A1 (ja) * 2010-03-29 2011-10-06 シャープ株式会社 表示装置、圧力検出装置および表示装置の製造方法
WO2012056663A1 (ja) * 2010-10-28 2012-05-03 シャープ株式会社 回路基板及びその製造方法並びに表示装置
JP6019329B2 (ja) * 2011-03-31 2016-11-02 株式会社Ｊｏｌｅｄ 表示装置および電子機器
SG194206A1 (en) * 2011-04-22 2013-11-29 Sharp Kk Liquid crystal display panel
JP2013196919A (ja) * 2012-03-21 2013-09-30 Sony Corp 有機ｅｌ表示装置、有機ｅｌ表示装置の製造方法およびカラーフィルタ基板
KR20130136063A (ko) * 2012-06-04 2013-12-12 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
KR101486038B1 (ko) 2012-08-02 2015-01-26 삼성디스플레이 주식회사 유기 발광 표시 장치
KR20140042575A (ko) * 2012-09-28 2014-04-07 엘지디스플레이 주식회사 산화물 박막 트랜지스터, 제조방법 및 이를 구비한 어레이기판 및 제조방법
JP6300589B2 (ja) 2013-04-04 2018-03-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8928829B2 (en) 2013-05-31 2015-01-06 Innolux Corporation Display device
CN103926726B (zh) 2013-11-19 2017-05-24 厦门天马微电子有限公司 液晶显示面板
JP6387560B2 (ja) * 2014-01-09 2018-09-12 株式会社Ｊｏｌｅｄ 薄膜トランジスタ、表示装置および電子機器
JP6350984B2 (ja) * 2014-04-24 2018-07-04 Ｔｉａｎｍａ Ｊａｐａｎ株式会社 薄膜トランジスタ及び表示装置
KR102155051B1 (ko) * 2014-04-29 2020-09-11 엘지디스플레이 주식회사 액정 디스플레이 장치와 이의 제조 방법
JP6433169B2 (ja) * 2014-06-23 2018-12-05 株式会社ジャパンディスプレイ 薄膜半導体装置
JP6417125B2 (ja) * 2014-06-25 2018-10-31 株式会社ジャパンディスプレイ 半導体装置
CN104103646A (zh) * 2014-06-30 2014-10-15 京东方科技集团股份有限公司 一种低温多晶硅薄膜晶体管阵列基板及其制备方法、显示装置
KR102278742B1 (ko) * 2014-06-30 2021-07-21 엘지디스플레이 주식회사 보상용 박막 트랜지스터를 구비한 초고 해상도 액정 표시장치
KR102202453B1 (ko) * 2014-08-28 2021-01-14 엘지디스플레이 주식회사 보상용 박막 트랜지스터를 구비한 초고 해상도 액정 표시장치
CN104392999B (zh) 2014-09-30 2017-03-29 合肥京东方光电科技有限公司 一种阵列基板及其制作方法、显示装置
CN104393000B (zh) * 2014-10-20 2018-06-19 上海天马微电子有限公司 一种阵列基板及其制作方法、显示装置
JP2016085400A (ja) * 2014-10-28 2016-05-19 株式会社ジャパンディスプレイ 液晶表示装置
KR102308669B1 (ko) 2014-12-05 2021-10-05 엘지디스플레이 주식회사 유기전계발광 표시장치 및 그 제조방법
CN105824160B (zh) * 2015-01-08 2020-06-16 群创光电股份有限公司 显示面板
CN110571227B (zh) * 2015-04-15 2021-12-07 群创光电股份有限公司 显示面板
TWI553839B (zh) * 2015-04-15 2016-10-11 群創光電股份有限公司 顯示面板
KR102397799B1 (ko) * 2015-06-30 2022-05-16 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 포함하는 표시장치
KR102367215B1 (ko) * 2015-08-31 2022-02-24 엘지디스플레이 주식회사 유기발광표시장치
TWI638206B (zh) * 2015-09-01 2018-10-11 友達光電股份有限公司 主動元件陣列基板
KR102558900B1 (ko) 2015-10-23 2023-07-25 엘지디스플레이 주식회사 표시장치와 이의 제조방법
KR102631445B1 (ko) * 2015-10-27 2024-01-31 삼성디스플레이 주식회사 유기 발광 표시 장치
CN105470196B (zh) 2016-01-05 2018-10-19 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及其制造方法、和显示装置
CN105470267A (zh) * 2016-01-11 2016-04-06 武汉华星光电技术有限公司 一种阵列基板及其制备方法
CN105514126B (zh) * 2016-02-19 2019-01-22 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN105742364A (zh) * 2016-04-12 2016-07-06 中山大学 一种抑制有源沟道区光致漏电流产生的mos管及应用
CN105785676B (zh) * 2016-04-29 2018-12-11 武汉华星光电技术有限公司 阵列基板及液晶显示装置
KR102526611B1 (ko) * 2016-05-31 2023-04-28 엘지디스플레이 주식회사 표시장치
US9806197B1 (en) * 2016-07-13 2017-10-31 Innolux Corporation Display device having back gate electrodes
KR102489594B1 (ko) 2016-07-29 2023-01-18 엘지디스플레이 주식회사 협 베젤을 갖는 표시장치
CN108346620A (zh) * 2017-01-23 2018-07-31 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
CN107817636B (zh) * 2017-10-31 2020-09-29 武汉天马微电子有限公司 一种阵列基板、显示面板及显示装置
CN107968113B (zh) 2017-12-15 2021-01-08 京东方科技集团股份有限公司 阵列基板及其制备方法
JP7045185B2 (ja) * 2017-12-27 2022-03-31 株式会社ジャパンディスプレイ アレイ基板、アレイ基板の製造方法、表示装置及びスイッチング素子
CN108493199A (zh) * 2018-04-19 2018-09-04 深圳市华星光电半导体显示技术有限公司 薄膜晶体管阵列基板及显示面板
US10546881B2 (en) 2018-04-19 2020-01-28 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Thin film transistor array substrate and display panel
CN108767016B (zh) * 2018-05-21 2021-09-21 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置
CN109545798B (zh) * 2018-10-18 2020-08-11 武汉华星光电半导体显示技术有限公司 一种阵列基板及其制作方法
CN109884836B (zh) * 2019-03-29 2022-01-07 上海天马微电子有限公司 显示面板和显示装置
CN113994486A (zh) * 2019-05-10 2022-01-28 日亚化学工业株式会社 图像显示装置的制造方法以及图像显示装置
CN111916492B (zh) * 2020-08-31 2021-12-24 武汉华星光电技术有限公司 Tft器件及其制备方法、阵列基板
WO2022091348A1 (ja) * 2020-10-30 2022-05-05 シャープ株式会社 表示装置および表示装置の製造方法
CN115373188A (zh) * 2021-05-20 2022-11-22 京东方科技集团股份有限公司 一种阵列基板、显示面板
CN114185214B (zh) * 2022-02-16 2022-05-03 北京京东方技术开发有限公司 阵列基板和显示器

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW479151B (en) * 1996-10-16 2002-03-11 Seiko Epson Corp Substrate for liquid crystal device, the liquid crystal device and projection-type display
JP3719430B2 (ja) * 1996-10-16 2005-11-24 セイコーエプソン株式会社 液晶装置用基板、液晶装置および投写型表示装置
JP3570410B2 (ja) * 1997-02-27 2004-09-29 セイコーエプソン株式会社 液晶装置用基板、液晶装置及び投写型表示装置
JP3141860B2 (ja) 1998-10-28 2001-03-07 ソニー株式会社 液晶表示装置の製造方法
US6590229B1 (en) * 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
JP4583540B2 (ja) * 1999-03-04 2010-11-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2000321601A (ja) * 1999-05-11 2000-11-24 Sony Corp 液晶表示装置の製造方法
JP2002033481A (ja) * 2000-07-14 2002-01-31 Sony Corp 薄膜半導体装置
JP3918412B2 (ja) * 2000-08-10 2007-05-23 ソニー株式会社 薄膜半導体装置及び液晶表示装置とこれらの製造方法
JP2002297058A (ja) * 2001-03-30 2002-10-09 Sanyo Electric Co Ltd アクティブマトリクス型表示装置
TW575777B (en) * 2001-03-30 2004-02-11 Sanyo Electric Co Active matrix type display device
JP2002297060A (ja) * 2001-03-30 2002-10-09 Sanyo Electric Co Ltd アクティブマトリクス型表示装置
JP2003008026A (ja) * 2001-06-26 2003-01-10 Sanyo Electric Co Ltd 半導体装置及びそれを用いたアクティブマトリクス型表示装置
JP2004045576A (ja) * 2002-07-09 2004-02-12 Sharp Corp 液晶表示装置及びその製造方法
JP2004053630A (ja) * 2002-07-16 2004-02-19 Sharp Corp 液晶表示装置及びその製造方法
JP2004109857A (ja) * 2002-09-20 2004-04-08 Seiko Epson Corp 液晶表示装置、及び電子機器
JP2004151546A (ja) * 2002-10-31 2004-05-27 Sharp Corp アクティブマトリクス基板および表示装置
JP2004165241A (ja) 2002-11-11 2004-06-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2004342923A (ja) 2003-05-16 2004-12-02 Seiko Epson Corp 液晶装置、アクティブマトリクス基板、表示装置、及び電子機器
JP4003714B2 (ja) * 2003-08-11 2007-11-07 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2005091819A (ja) * 2003-09-18 2005-04-07 Sharp Corp 液晶表示装置
JP4180018B2 (ja) * 2003-11-07 2008-11-12 三洋電機株式会社 画素回路及び表示装置
JP4341570B2 (ja) * 2005-03-25 2009-10-07 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2007188936A (ja) * 2006-01-11 2007-07-26 Epson Imaging Devices Corp 表示装置

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US8174633B2 (en) 2012-05-08
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