WO2018233239A1 - 一种显示面板和显示面板的制造方法 - Google Patents

一种显示面板和显示面板的制造方法 Download PDF

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Publication number
WO2018233239A1
WO2018233239A1 PCT/CN2017/115607 CN2017115607W WO2018233239A1 WO 2018233239 A1 WO2018233239 A1 WO 2018233239A1 CN 2017115607 W CN2017115607 W CN 2017115607W WO 2018233239 A1 WO2018233239 A1 WO 2018233239A1
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Prior art keywords
layer
metal layer
light sensing
sensing element
display panel
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PCT/CN2017/115607
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English (en)
French (fr)
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卓恩宗
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US16/341,446 priority Critical patent/US11322728B2/en
Publication of WO2018233239A1 publication Critical patent/WO2018233239A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133769—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers comprising an active, e.g. switchable, alignment layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present application relates to the field of display technologies, and more particularly to a display panel and a method of manufacturing the display panel.
  • the display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • Most of the displays on the market today are backlight displays, which include a display panel and a backlight module.
  • the working principle of the display panel is to place liquid crystal molecules in two parallel substrates, and apply driving voltages on the two substrates to control the rotation direction of the liquid crystal molecules to refract the light of the backlight module to generate a picture.
  • the thin film transistor display includes a display panel and a backlight module, and the display panel includes a color filter substrate (CF Substrate, also referred to as a color filter substrate) and a thin film transistor array substrate (Thin Film Transistor Substrate, TFT Substrate).
  • CF Substrate also referred to as a color filter substrate
  • TFT Substrate thin film transistor array substrate
  • a transparent electrode exists on the opposite inner side of the substrate.
  • a layer of liquid crystal molecules (LC) is sandwiched between the two substrates.
  • the display panel controls the orientation of the liquid crystal molecules by an electric field, changes the polarization state of the light, and achieves the purpose of display by the penetration and blocking of the optical path by the polarizing plate.
  • the existing display panel is not smart enough, and the backlight is too dark to see the picture under the sun. In the dark, the backlight is too bright and glaring.
  • the technical problem to be solved by the present application is to provide a display panel and a method of manufacturing the display panel that can be independently adjusted according to the external environment.
  • the application provides a display panel comprising:
  • the switch assembly including an indium gallium zinc oxide layer
  • a light sensing element disposed on a side of the switch assembly.
  • the application also provides a display panel comprising:
  • the switch component comprises an indium gallium zinc oxide layer
  • a light sensing element disposed on a side of the switch assembly.
  • the switch component further includes an etch barrier layer; the etch barrier layer is disposed on the indium gallium zinc oxide layer;
  • a light sensing metal layer is disposed on the extending portion of the etch barrier layer, and the light sensing element is disposed on the light sensing metal layer;
  • the light sensing element is provided with a transparent conductive layer
  • the light sensing element includes a P-type semiconductor layer, an intrinsic semiconductor layer, and an N-type semiconductor layer from the photosensitive metal layer.
  • the switch component includes, in order from the substrate, a gate metal layer, a gate insulating layer, an indium gallium zinc oxide layer, an etch barrier layer, and a source metal layer and a drain layer in the same layer.
  • Metal layer in order from the substrate, a gate metal layer, a gate insulating layer, an indium gallium zinc oxide layer, an etch barrier layer, and a source metal layer and a drain layer in the same layer.
  • a light sensing metal layer is disposed on the extending portion of the etch barrier layer, and the light sensing element is disposed on the light sensing metal layer;
  • the photosensitive metal layer is located in the same layer as the source metal layer and the drain metal layer.
  • the switch component includes, in order from the substrate, a gate metal layer, a gate insulating layer, An indium gallium zinc oxide layer, an etch barrier layer, and a source metal layer and a drain metal layer in the same layer.
  • the switch assembly further includes an etch barrier layer; the etch stop layer is disposed on the indium gallium zinc oxide layer; and the light sensing element is disposed on the extension of the etch barrier layer.
  • the etch stop layer is provided with a light-sensitive metal layer on the extension portion, and the light sensing element is disposed on the light-sensitive metal layer;
  • a transparent conductive layer is disposed on the light sensing element.
  • the light sensing element comprises a P-type semiconductor layer, an intrinsic semiconductor layer and an N-type semiconductor layer from the photosensitive metal layer.
  • the switch component and the light sensing component are covered with a passivation layer.
  • the passivation layer is respectively provided with a transparent conductive layer corresponding to the switch component and the light sensing component.
  • a light sensing metal layer is disposed on the extending portion of the etch barrier layer, and the light sensing element is disposed on the light sensing metal layer;
  • the photosensitive metal layer is located in the same layer as the source metal layer and the drain metal layer.
  • the switch component and the light sensing component are covered with a passivation layer
  • a transparent conductive layer is disposed on the passivation layer corresponding to the switch component and the light sensing component, respectively.
  • the invention also discloses a display panel comprising:
  • the switch component comprises an indium gallium zinc oxide layer
  • the light sensing component is disposed on a side of the switch component
  • the switch assembly includes, in order from the substrate, a gate metal layer, a gate insulating layer, an indium gallium zinc oxide layer, an etch barrier layer, and a source metal layer and a drain metal layer in the same layer;
  • the switch assembly further includes an etch stop layer; the etch stop layer is disposed on the indium gallium zinc oxide layer; the light sensing element is disposed on the extension of the etch stop layer;
  • a light sensing metal layer is disposed on the extending portion of the etch barrier layer, and the light sensing element is disposed on the light sensing metal layer;
  • the light sensing element is provided with a transparent conductive layer
  • the light sensing element includes a P-type semiconductor layer, an intrinsic semiconductor layer, and an N-type semiconductor layer from the photosensitive metal layer;
  • a light sensing metal layer is disposed on the extending portion of the etch barrier layer, and the light sensing element is disposed on the light sensing metal layer;
  • the photosensitive metal layer is located in the same layer as the source metal layer and the drain metal layer.
  • the invention also discloses a manufacturing method of a display panel, comprising the steps of:
  • a light sensing element is formed on one side of the switch assembly.
  • the forming of the switch component includes a process:
  • the method further includes:
  • Forming a light sensing component on one side of the switch component further includes:
  • the light sensing element is formed on an extension of the etch stop layer.
  • the forming of the light sensing component on the extension of the etch barrier layer includes:
  • a transparent conductive layer is formed on the light sensing element.
  • the forming of the light sensing component includes a process:
  • An N-type semiconductor layer is formed on the intrinsic semiconductor layer.
  • a passivation layer is formed on the switch component and the photo sensing element.
  • a transparent conductive layer is formed on the passivation layer corresponding to the switch component and the light sensing component respectively.
  • a light sensing metal layer is disposed on the extending portion of the etch barrier layer, and the light sensing element is disposed on the light sensing metal layer;
  • the photosensitive metal layer is located in the same layer as the source metal layer and the drain metal layer.
  • one side of the switch component is proportionally disposed with a light sensing component, which may be one-to-one or many-to-one.
  • a light sensing component which may be one-to-one or many-to-one.
  • the external environment of the display area of the display panel especially the external light.
  • the intensity condition will be perceived by the light sensing element. Therefore, when the light is strong, the display panel can automatically adjust to increase the brightness, enhance the contrast, and avoid the situation that the display screen is too dark and invisible; and the light is weak, and the brightness can be adjusted accordingly. Dark, reduce the contrast, avoid the picture is too bright and glare to hurt the eyes, enhance the viewing experience of the audience;
  • the switch assembly is made of indium gallium zinc oxide (IGZO), which can be displayed by IGZO technology.
  • IGZO Ultra HD (Ultra Definition, resolution 4k*2k) level
  • IGZO It is an amorphous oxide containing indium, gallium and zinc.
  • the carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly increase the charge and discharge rate of the TFT electrode.
  • IGZO displays have higher energy efficiency levels and higher efficiency due to the reduced number of transistors and improved light transmittance per pixel.
  • IGZO can be produced using existing amorphous silicon production lines with only minor modifications. Therefore, it is more competitive in terms of cost than low temperature polysilicon.
  • FIG. 1 is a schematic view of a display panel according to an embodiment of the present application.
  • FIG. 2 is a schematic view showing a manufacturing process of a display panel of the present invention
  • FIG. 3 is a flow chart of a method for manufacturing a display panel according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a method of manufacturing a display panel according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a display device according to an embodiment of the present application.
  • first and second are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, features defining “first” and “second” may include one or more of the features either explicitly or implicitly.
  • a plurality means two or more unless otherwise stated.
  • the term “comprises” and its variations are intended to cover a non-exclusive inclusion.
  • connection In the description of the present application, it should be noted that the terms “installation”, “connected”, and “connected” are to be understood broadly, and may be fixed or detachable, for example, unless otherwise explicitly defined and defined. Connected, or integrally connected; can be mechanical or electrical; can be directly connected, or indirectly connected through an intermediate medium, can be the internal communication of the two components. For those skilled in the art, the specific meanings of the above terms in the present application can be understood on a case-by-case basis.
  • FIG. 1 is a schematic diagram of a display panel according to an embodiment of the present application
  • FIG. 2 is a schematic diagram of a manufacturing process of a display panel according to the present invention.
  • the present disclosure discloses a display panel, including:
  • the switch assembly 10 includes an indium gallium zinc oxide layer 14;
  • the light sensing element 20 is disposed on the side of the switch assembly 10.
  • the display panel may be an LCD (short for Liquid Crystal Display) or an OLED (abbreviation of Organic Light-Emitting Diode); when the display panel is an LCD panel, the color resist layer may be used, and the color resist layer may be The array substrate on which the switch component is disposed may be oppositely disposed on the array substrate; when the display panel is a white light OLED (using a direct white light emitting OLED device as a pixel point light source, filtering out through a red, green and blue color film) Color);
  • the display panel can also be an OLED display panel made of a self-luminous organic material that is now widely developed.
  • one side of the switch component in the display panel is proportionally disposed with a light sensing component, which may be one-to-one or many-to-one, and thus, the outside of the display area of the display panel
  • a light sensing component which may be one-to-one or many-to-one
  • the environment, especially the external light intensity, will be perceived by the light sensing element. Therefore, when the light is strong, the display panel can automatically adjust to increase the brightness, enhance the contrast, and avoid the display being too dark and invisible; and the light is weak. It can also dim the brightness, reduce the contrast, avoid the picture too bright and glare, and hurt the eyes, which enhances the viewing experience of the audience.
  • the switch assembly is made of indium gallium zinc oxide (IGZO).
  • IGZO technology can make the display power consumption close to OLED, but the cost is lower, the thickness is only 25% higher than OLED, and the resolution can reach full HD (HD) or even Ultra HD (Ultra Definition, resolution 4k*) 2k) level;
  • IGZO is an amorphous oxide containing indium, gallium and zinc.
  • the carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly improve the TFT image. Charge-discharge rate of the electrode, the pixel response speed, faster refresh rate, faster response while also greatly improved the rate of line scanning the pixels, so that the super-resolution possible in TFT-LCD.
  • IGZO displays have higher energy efficiency levels and higher efficiency due to the reduced number of transistors and improved light transmittance per pixel.
  • IGZO can be produced using existing amorphous silicon production lines with only minor modifications. Therefore, it is more competitive in terms of cost than low temperature polysilicon.
  • the substrate 100 includes a glass substrate 30.
  • the switch assembly 10 includes a gate metal layer 12, a gate insulating layer 13, an indium gallium zinc oxide layer 14, and an etch barrier layer. 11, and a source metal layer 15 and a drain metal layer 16 in the same layer.
  • the intrinsic semiconductor layer of the switch component is made of indium gallium zinc oxide (IGZO), and the IGZO technology can make the display power consumption close to the OLED, but the cost is lower.
  • the thickness is only 25% higher than that of OLED, and the resolution can reach full HD (HD) and even Ultra HD (Ultra Definition, 4k*2k).
  • the switch component 10 and the light sensing component 20 are covered with a passivation layer 17 .
  • the switch assembly 10 further includes an etch stop layer 11; the etch stop layer 11 is disposed on the indium gallium zinc oxide layer 14; the light sensing element 20 is disposed at the etch stop On the extension of layer 11.
  • the etch barrier layer adopts an ESL structure, and the TFT structure with an island-shaped ESL (Etch-stop layer), an etch barrier layer/etching protection layer is widely used with the advantage of small parasitic capacitance, and the indium gallium zinc oxide is widely used.
  • the layer plays a facilitating role.
  • the light-sensitive metal layer 21 is disposed on the extending portion of the etch barrier layer 11, and the light sensing element 20 is disposed on the light-sensitive metal layer 21;
  • a transparent conductive layer 22 is disposed on the light sensing element 20 .
  • the light sensing element is disposed in the same layer as the gate metal layer and the source metal layer, and is formed together to save the process; in addition, the light sensing metal layer exists as a lower electrode of the light sensing element.
  • the transparent conductive layer is present as an upper electrode of the photosensitive metal layer.
  • the light sensing element can sense the external light intensity of the display area by the electrical signal difference between the upper and lower electrodes, thereby being a display panel. Autonomous adjustment provides data support.
  • the photo sensing element 20 includes a P-type semiconductor layer 23 from the photo-sensitive metal layer 21, The intrinsic semiconductor layer 24 and the N-type semiconductor layer 25.
  • the P-type semiconductor layer may be a high-concentration doped P-type intrinsic semiconductor layer, that is, P+ ⁇ -Si
  • the intrinsic semiconductor layer may be ⁇ -Si
  • the N-type semiconductor layer may be high.
  • the concentration-doped N-type intrinsic semiconductor layer, that is, N+ ⁇ -Si; the three constitute the main body of the light sensing element, and cooperate with the upper and lower electrodes to detect information such as the intensity of external light at the display area of the display panel.
  • the passivation layer 17 is provided with a transparent conductive layer corresponding to the switch component 10 and the light sensing component 20 (the transparent conductive layer corresponding to the switch component is not labeled).
  • the two transparent conductive layers are arranged in the same layer and formed by a photomask process, which saves the process and has two advantages.
  • the transparent conductive layer is also formed together, which satisfies the requirements of the switch component and satisfies the requirements of the electrodes on the light sensing component.
  • the light-sensitive metal layer 21 is disposed on the extending portion of the etch barrier layer 11, and the light sensing element 20 is disposed on the light-sensitive metal layer 21;
  • the photosensitive metal layer 21 is located in the same layer as the source metal layer 15 and the drain metal layer 16.
  • the photo-sensing metal cluster is located on the same layer as the source metal layer and the drain metal layer, and is formed by the same photomask process, and has three advantages.
  • FIG. 3 is a flow chart of a method for manufacturing a display panel according to the present invention. Referring to FIG. 3, it can be seen from FIG. 1 and FIG. 2:
  • the invention also discloses a manufacturing method of a display panel, comprising the steps of:
  • S203 Form a light sensing element on one side of the switch assembly.
  • the forming of the switch component includes a process:
  • a switch component including an indium gallium zinc oxide layer is formed on the substrate, include:
  • Forming a light sensing component on one side of the switch component further includes:
  • the light sensing element is formed on an extension of the etch stop layer.
  • the method specifically includes:
  • a transparent conductive layer is formed on the light sensing element.
  • the forming of the light sensing component includes a process:
  • An N-type semiconductor layer is formed on the intrinsic semiconductor layer.
  • the switch component and the light sensing component are covered on the switch component to form a passivation layer.
  • a transparent conductive layer is formed on the passivation layer corresponding to the switch component and the light sensing component.
  • the etch stop layer is provided with a light-sensitive metal layer, and the light sensing element is disposed on the light-sensitive metal layer;
  • the photosensitive metal layer is located in the same layer as the source metal layer and the drain metal layer.
  • FIG. 4 is a schematic diagram of a method for manufacturing a display panel according to an embodiment of the present application. Referring to FIG. 4, the present application further provides a method for manufacturing a display panel, including the steps of:
  • a transparent conductive layer is disposed on the passivation layer corresponding to the drain metal layer and the photo sensing element, respectively.
  • FIG. 5 is a schematic diagram of a display device according to an embodiment of the present application.
  • the present application further provides a display device 200, including a driving device 230, and a display panel 210 according to any of the embodiments.
  • a display device 200 including a driving device 230, and a display panel 210 according to any of the embodiments.
  • the display device 200 may be a TN, OCB, VA type, curved surface liquid crystal display device, but is not limited thereto.
  • the display panel may also be, for example, an OLED display panel, a QLED display panel, a curved display panel, or other display panel.

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Abstract

一种显示面板和显示面板的制造方法，显示面板包括：基板(100)，开关组件(10)，设置在基板(100)上；其中，开关组件(10)包括铟镓锌氧化物层(14)；光感测元件(20)，光感测元件(20)设置于开关组件(10)一侧。

Description

一种显示面板和显示面板的制造方法 【技术领域】
本申请涉及显示技术领域，更具体的说，涉及一种显示面板和显示面板的制造方法。
【背景技术】
显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有市场上的显示器大部分为背光型显示器，其包括显示面板及背光模组(backlightmodule)。显示面板的工作原理是在两片平行的基板当中放置液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
其中，薄膜晶体管显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)由于具有低的功耗、优异的画面品质以及较高的生产良率等性能，目前已经逐渐占据了显示领域的主导地位。同样，薄膜晶体管显示器包含显示面板和背光模组，显示面板包括彩膜基板(Color Filter Substrate，CF Substrate，也称彩色滤光片基板)和薄膜晶体管阵列基板(Thin Film Transistor Substrate，TFT Substrate)，上述基板的相对内侧存在透明电极。两片基板之间夹一层液晶分子(Liquid Crystal，LC)。显示面板是通过电场对液晶分子取向的控制，改变光的偏振状态，并藉由偏光板实现光路的穿透与阻挡，实现显示的目的。
而随着LCD产品趋向于高解析度方向发展，人们发现该LCD技术也存在这一些亟待解决的问题，例如，现有的显示面板不够智能，到了阳光底下背光太暗看不清画面，而到了暗处，则背光太亮，刺眼。
应该注意，上面对技术背景的介绍只是为了方便对本申请的技术方案进行清楚、完整的说明，并方便本领域技术人员的理解而阐述的。不能仅仅因为这些方案在本申请的背景技术部分进行了阐述而认为上述技术方案为本领域技术人员所公知。
【发明内容】
本申请所要解决的技术问题是提供一种能够根据外界环境进行自主调节的显示面板和显示面板的制造方法。
本申请提供了一种显示面板，包括：
基板，
开关组件，设置在所述基板上；所述开关组件包括铟镓锌氧化物层；
光感测元件，所述光感测元件设置于所述开关组件一侧。
本申请还提供了一种显示面板，包括：
基板，
开关组件，设置在所述基板上；
其中，所述开关组件包括铟镓锌氧化物层；
光感测元件，所述光感测元件设置于所述开关组件一侧。
可选的，所述开关组件还包括刻蚀阻挡层；所述刻蚀阻挡层设置在铟镓锌氧化物层上；
所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感测元件上设置有透明导电层；
所述光感测元件从光感金属层起包括P型半导体层、本征半导体层和N型半导体层。
可选的，所述开关组件从所述基板起依次包括：栅极金属层、栅极绝缘层、铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层；
所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感金属层与源极金属层、漏极金属层位于同一层。
可选的，所述开关组件从所述基板起依次包括：栅极金属层、栅极绝缘层、 铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层。
可选的，所述开关组件还包括刻蚀阻挡层；所述刻蚀阻挡层设置在铟镓锌氧化物层上；所述光感测元件设置在所述刻蚀阻挡层的延伸部上。
可选的，所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感测元件上设置有透明导电层。
可选的，所述光感测元件从光感金属层起包括P型半导体层、本征半导体层和N型半导体层。
可选的，所述开关组件和光感测元件上覆盖有钝化层。
可选的，所述钝化层上分别对应开关组件和光感测元件设置有透明导电层。
可选的，所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感金属层与源极金属层、漏极金属层位于同一层。
可选的，所述开关组件和光感测元件上覆盖有钝化层；
所述钝化层上分别对应开关组件和光感测元件设置有透明导电层。
本发明还公开了一种显示面板，包括：
基板，
开关组件，设置在所述基板上；
其中，所述开关组件包括铟镓锌氧化物层；
光感测元件，所述光感测元件设置于所述开关组件一侧；
所述开关组件从所述基板起依次包括：栅极金属层、栅极绝缘层、铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层；
所述开关组件还包括刻蚀阻挡层；所述刻蚀阻挡层设置在铟镓锌氧化物层上；所述光感测元件设置在所述刻蚀阻挡层的延伸部上；
所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感测元件上设置有透明导电层；
所述光感测元件从光感金属层起包括P型半导体层、本征半导体层和N型半导体层；
所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感金属层与源极金属层、漏极金属层位于同一层。
本发明还公开了一种显示面板的制造方法，包括步骤：
提供一基板；
在基板上形成包括铟镓锌氧化物层的开关组件；
在所述开关组件的一侧形成光感测元件。
可选的，所述开关组件的形成包括过程：
提供一玻璃基板作为所述基板；
从所述玻璃基板起依次形成栅极金属层、栅极绝缘层、所述铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层以形成所述开关组件。
可选的，在基板上形成包括铟镓锌氧化物层的开关组件中，还包括：
在所述铟镓锌氧化物层上形成蚀刻阻挡层；
在所述开关组件的一侧形成光感测元件中，还包括：
在所述蚀刻阻挡层的延伸部上形成所述光感测元件。
可选的，在所述蚀刻阻挡层的延伸部上形成所述光感测元件中，具体包括：
在所述蚀刻阻挡层的延伸部上形成光感金属层；
在所述光感金属层上形成所述光感测元件；
在所述光感测元件上形成透明导电层。
可选的，所述光感测元件的形成包括过程：
在所述光感金属层上形成P型半导体层；
在所述P型半导体层上形成本征半导体层；
在所述本征半导体层上形成N型半导体层。
可选的，在所述开关组件和光感测元件上覆盖形成钝化层。
可选的，在所述钝化层上分别对应开关组件和光感测元件形成透明导电层。
可选的，所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感金属层与源极金属层、漏极金属层位于同一层。
本申请中，该开关组件的一侧边成比例的对应设置有光感测元件，可以是一对一也可以是多对一，如此，该显示面板的显示区域的外界环境，特别是外界光线强度情况将被该光感测元件感知，因而，光线强时，显示面板可以自动调节提高亮度，增强对比度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，降低对比度，避免画面太亮刺眼而伤眼睛，提升了观众的观看体验；另外，该开关组件采用铟镓锌氧化物(IGZO，即indium gallium zinc oxide)制成的，利用IGZO技术可以使显示屏功耗接近OLED，但成本更低，厚度也只比OLED只高出25％，且分辨率可以达到全高清(full HD)乃至超高清(Ultra Definition，分辨率4k*2k)级别程度；IGZO是一种含有铟、镓和锌的非晶氧化物，载流子迁移率是非晶硅的20～30倍，可以大大提高TFT对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得超高分辨率在TFT-LCD中成为可能。另外，由于晶体管数量减少和提高了每个像素的透光率，IGZO显示器具有更高的能效水平，而且效率更高；而且，IGZO可以利用现有的非晶硅生产线生产，只需稍加改动，因此在成本方面比低温多晶硅更有竞争力。
【附图说明】
图1是本申请实施例一种显示面板的示意图；
图2是本发明一种显示面板的制造过程示意图；
图3是本申请实施例一种显示面板的制造方法的流程图；
图4是本申请实施例一种显示面板的制造方法的示意图；
图5是本申请实施例一种显示装置的示意图。
【具体实施方式】
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在 或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
图1是本申请实施例一种显示面板的示意图，图2是本发明一种显示面板的制造过程示意图，参考图1和图2可知，本申请公开了一种显示面板，包括：
基板100，
开关组件10，设置在所述基板100上；
所述开关组件10包括铟镓锌氧化物层14；
光感测元件20，所述光感测元件20设置所述开关组件10一侧。
其中，该显示面板可能是LCD(Liquid Crystal Display的简称)，也可以是OLED(Organic Light-Emitting Diode的简称)；当该显示面板为LCD面板时，包括色阻层，该色阻层可以与该开关组件所在的阵列基板相对设置，也可以直接形成在该阵列基板上；当该显示面板为白光OLED(采用直接发白光的OLED器件作为像素点光源,再通过红绿蓝的彩膜滤出颜色)；该显示面板也可以是现在广泛发展的基于自发光的有机材料制作的OLED显示面板。
本申请的显示面板，该显示面板中的开关组件的一侧边成比例的对应设置有光感测元件，可以是一对一也可以是多对一，如此，该显示面板的显示区域的外界环境，特别是外界光线强度情况将被该光感测元件感知，因而，光线强时，显示面板可以自动调节提高亮度，增强对比度，避免显示画面太暗而看不清的情况；而光线弱，也能够对应将亮度调暗，降低对比度，避免画面太亮刺眼而伤眼睛，提升了观众的观看体验；另外，该开关组件采用铟镓锌氧化物(IGZO，即indium gallium zinc oxide)制成的，利用IGZO技术可以使显示屏功耗接近OLED，但成本更低，厚度也只比OLED只高出25％，且分辨率可以达到全高清(full HD)乃至超高清(Ultra Definition，分辨率4k*2k)级别程度；IGZO是一种含有铟、镓和锌的非晶氧化物，载流子迁移率是非晶硅的20～30倍，可以大大提高TFT对像素电极的充放电速率，提高像素的响应速度，实现更快的刷新率，同时更快的响应也大大提高了像素的行扫描速率，使得超高分辨率在TFT-LCD中成为可能。
另外，由于晶体管数量减少和提高了每个像素的透光率，IGZO显示器具有更高的能效水平，而且效率更高；而且，IGZO可以利用现有的非晶硅生产线生产，只需稍加改动，因此在成本方面比低温多晶硅更有竞争力。
本实施例可选的，基板100包括玻璃基板30，所述开关组件10从玻璃基板20起包括：栅极金属层12、栅极绝缘层13、铟镓锌氧化物层14、刻蚀阻挡层11，以及位于同一层的源极金属层15和漏极金属层16。本实施方案中，该开关组件的本征半导体层使用的是铟镓锌氧化物(IGZO，即indium gallium zinc oxide)制成的，利用IGZO技术可以使显示屏功耗接近OLED，但成本更低，厚度也只比OLED只高出25％，且分辨率可以达到全高清(full HD)乃至超高清(Ultra Definition，分辨率4k*2k)级别程度。
本实施例可选的，开关组件10和光感测元件20上覆盖有钝化层17。
本实施例可选的，开关组件10还包括刻蚀阻挡层11；所述刻蚀阻挡层11设置在铟镓锌氧化物层14上；所述光感测元件20设置在所述刻蚀阻挡层11的延伸部上。本实施方案中，在形成刻蚀阻挡层时，顺势将其向开关组件的一侧近延伸，并在该延伸部上形成光感测元件，该步骤节约了工序，达到了一举两得的效果；该蚀刻阻挡层采用ESL结构，该带岛状ESL(Etch-stop layer)，蚀刻阻挡层/刻蚀保护层的TFT结构以寄生电容小的优点，得到了广泛应用，并且对该铟镓锌氧化物层起到了促进作用。
本实施例可选的，刻蚀阻挡层11的延伸部上设置有光感金属层21，所述光感测元件20设置在所述光感金属层21上；
所述光感测元件20上设置有透明导电层22。本实施方案中，该光感测元件与栅极金属层和源极金属层同层设置，并一起形成，节约了工序；另外，该光感金属层是作为光感测元件的下电极而存在，该透明导电层则作为光感金属层上电极而存在，如此，该光感测元件将能够通过上下电极之间的电信号差，而得以感测显示区域的外界光线强度，从而为显示面板的自主调节提供数据支持。
本实施例可选的，光感测元件20从光感金属层21起包括P型半导体层23、 本征半导体层24和N型半导体层25。实施方案中，该P型半导体层可以是高浓度掺杂P型本征半导体层，即P+α-Si，该本征半导体层可以是α-Si，而该N型半导体层则可以是高浓度掺杂N型本征半导体层，即N+α-Si；三者构成光感测元件的主体，配合上下电极以侦测显示面板的显示区域处的外界光线强度等信息。
本实施例可选的，钝化层17上分别对应开关组件10和光感测元件20设置有透明导电层(对应开关组件的透明导电层未标示)。两处透明导电层同层设置，用一道光罩制程形成，节约工序，一举两得；该透明导电层也是一起形成的，满足开关组件需求的同时，也满足了光感测元件上电极的需求。
本实施例可选的，刻蚀阻挡层11的延伸部上设置有光感金属层21，所述光感测元件20设置在所述光感金属层21上；
所述光感金属层21与源极金属层15、漏极金属层16位于同一层。该光感金属簇鞥与源极金属层、漏极金属层位于同一层，由同一道光罩制程形成，一举三得。
图3是本发明一种显示面板的制造方法的流程图，参考图3，结合图1和图2可知：
本发明还公开了一种显示面板的制造方法，包括步骤：
S201:提供一基板；
S202:在基板上形成包括铟镓锌氧化物层的开关组件；
S203:在所述开关组件的一侧形成光感测元件。
本实施例可选的的，所述开关组件的形成包括过程：
提供一玻璃基板作为所述基板；
从所述玻璃基板起依次形成栅极金属层、栅极绝缘层、所述铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层以形成所述开关组件。
本实施例可选的的，在基板上形成包括铟镓锌氧化物层的开关组件中，还 包括：
在所述铟镓锌氧化物层上形成蚀刻阻挡层；
在所述开关组件的一侧形成光感测元件中，还包括：
在所述蚀刻阻挡层的延伸部上形成所述光感测元件。
本实施例可选的的，在所述蚀刻阻挡层的延伸部上形成所述光感测元件中，具体包括：
在所述蚀刻阻挡层的延伸部上形成光感金属层；
在所述光感金属层上形成所述光感测元件；
在所述光感测元件上形成透明导电层。
本实施例可选的的，所述光感测元件的形成包括过程：
在所述光感金属层上形成P型半导体层；
在所述P型半导体层上形成本征半导体层；
在所述本征半导体层上形成N型半导体层。
本实施例可选的的，在所述开关组件和光感测元件上覆盖形成钝化层。
本实施例可选的的，在所述钝化层上分别对应开关组件和光感测元件形成透明导电层。
本实施例可选的的，所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
所述光感金属层与源极金属层、漏极金属层位于同一层。
图4是本申请实施例显示面板的制造方法的示意图，参考图4可知，本申请还提供了一种显示面板的制造方法，包括步骤：
S1:在基板上形成栅极金属层和栅极绝缘层；
S2:在栅极绝缘层上形成铟镓锌氧化物层；
S3:在栅极绝缘层和铟镓锌氧化物层上形成刻蚀阻挡层；
S4:在刻蚀阻挡层上形成源极金属层和漏极金属层，并在蚀刻阻挡层的延伸 部上形成光感金属层；
S5:在光感金属层上形成包括P型半导体层、本征半导体层和N型半导体层；
S6:对应刻蚀阻挡层，在源极金属层、漏极金属层和光感测元件上覆盖钝化层；
S7:在钝化层上分别对应漏极金属层和光感测元件设置透明导电层。一侧
图5是本申请实施例一种显示装置的示意图，参考图5可知，本申请还提供了一种显示装置200，包括驱动装置230，以及本申请任一所述的显示面板210。一侧
在某些实施方式中，上述显示装置200可以为TN、OCB、VA型、曲面型液晶显示器件，但并不限于此。
可选的，显示面板还可例如为OLED显示面板、QLED显示面板、曲面显示面板或其他显示面板。
以上内容是结合具体的可选的实施方式对本申请所作的进一步详细说明，不能认定本申请的具体实施只局限于这些说明。对于本申请所属技术领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干简单推演或替换，都应当视为属于本申请的保护范围。

Claims (20)

  1. 一种显示面板，包括：
    基板，
    开关组件，设置在所述基板上；
    其中，所述开关组件包括铟镓锌氧化物层；
    光感测元件，所述光感测元件设置于所述开关组件一侧。
  2. 如权利要求1所述的显示面板，其中：所述开关组件还包括刻蚀阻挡层；所述刻蚀阻挡层设置在铟镓锌氧化物层上；
    所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感测元件上设置有透明导电层；
    所述光感测元件从光感金属层起包括P型半导体层、本征半导体层和N型半导体层。
  3. 如权利要求1所述的显示面板，其中：所述开关组件从所述基板起依次包括：栅极金属层、栅极绝缘层、铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层；
    所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感金属层与源极金属层、漏极金属层位于同一层。
  4. 如权利要求1所述的显示面板，其中：所述开关组件从所述基板起依次包括：栅极金属层、栅极绝缘层、铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层。
  5. 如权利要求1所述的显示面板，其中：所述开关组件还包括刻蚀阻挡层；所述刻蚀阻挡层设置在铟镓锌氧化物层上；所述光感测元件设置在所述刻蚀阻挡层的延伸部上。
  6. 如权利要求5所述的显示面板，其中：所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感测元件上设置有透明导电层。
  7. 如权利要求6所述的显示面板，其中：所述光感测元件从光感金属层起包括P型半导体层、本征半导体层和N型半导体层。
  8. 如权利要求7所述的显示面板，其中：所述开关组件和光感测元件上覆盖有钝化层。
  9. 如权利要求8所述的显示面板，其中：所述钝化层上分别对应开关组件和光感测元件设置有透明导电层。
  10. 如权利要求4所述的显示面板，其中：所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感金属层与源极金属层、漏极金属层位于同一层。
  11. 如权利要求2所述的显示面板，其中：所述开关组件和光感测元件上覆盖有钝化层；
    所述钝化层上分别对应开关组件和光感测元件设置有透明导电层。
  12. 一种显示面板，包括：
    基板，
    开关组件，设置在所述基板上；
    其中，所述开关组件包括铟镓锌氧化物层；
    光感测元件，所述光感测元件设置于所述开关组件一侧；
    所述开关组件从所述基板起依次包括：栅极金属层、栅极绝缘层、铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层；
    所述开关组件还包括刻蚀阻挡层；所述刻蚀阻挡层设置在铟镓锌氧化物层上；所述光感测元件设置在所述刻蚀阻挡层的延伸部上；
    所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感测元件上设置有透明导电层；
    所述光感测元件从光感金属层起包括P型半导体层、本征半导体层和N型半导体层；
    所述的刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感金属层与源极金属层、漏极金属层位于同一层。
  13. 一种显示面板的制造方法，包括步骤：
    提供一基板；
    在基板上形成包括铟镓锌氧化物层的开关组件；
    在所述开关组件的一侧形成光感测元件。
  14. 如权利要求13所述的显示面板的制造方法，其中，所述开关组件的形成包括过程：
    提供一玻璃基板作为所述基板；
    从所述玻璃基板起依次形成栅极金属层、栅极绝缘层、所述铟镓锌氧化物层、刻蚀阻挡层，以及位于同一层的源极金属层和漏极金属层以形成所述开关组件。
  15. 如权利要求13所述的显示面板的制造方法，其中，在基板上形成包括铟镓锌氧化物层的开关组件中，还包括：
    在所述铟镓锌氧化物层上形成蚀刻阻挡层；
    在所述开关组件的一侧形成光感测元件中，还包括：
    在所述蚀刻阻挡层的延伸部上形成所述光感测元件。
  16. 如权利要求15所述的显示面板的制造方法，其中，在所述蚀刻阻挡层的延伸部上形成所述光感测元件中，具体包括：
    在所述蚀刻阻挡层的延伸部上形成光感金属层；
    在所述光感金属层上形成所述光感测元件；
    在所述光感测元件上形成透明导电层。
  17. 如权利要求16所述的显示面板的制造方法，其中，所述光感测元件的形成包括过程：
    在所述光感金属层上形成P型半导体层；
    在所述P型半导体层上形成本征半导体层；
    在所述本征半导体层上形成N型半导体层。
  18. 如权利要求17所述的显示面板的制造方法，其中，在所述开关组件和光感测元件上覆盖形成钝化层。
  19. 如权利要求18所述的显示面板的制造方法，其中，在所述钝化层上分别对应开关组件和光感测元件形成透明导电层。
  20. 如权利要求14所述的显示面板的制造方法，其中，所述刻蚀阻挡层的延伸部上设置有光感金属层，所述光感测元件设置在所述光感金属层上；
    所述光感金属层与源极金属层、漏极金属层位于同一层。
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CN101924161A (zh) * 2009-06-15 2010-12-22 友达光电股份有限公司 光感测器及相应的薄膜晶体管基板的制造方法
CN101976679A (zh) * 2010-03-11 2011-02-16 友达光电股份有限公司 具有光反馈补偿的主动矩阵式有机发光二极管显示器
CN102354695A (zh) * 2011-02-11 2012-02-15 友达光电股份有限公司 显示器及其制作方法
CN104037179A (zh) * 2014-04-15 2014-09-10 友达光电股份有限公司 光感应装置及其制作方法
CN107390406A (zh) * 2017-06-20 2017-11-24 惠科股份有限公司 一种显示面板、显示面板的制造方法和显示装置

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