WO2016145694A1 - Coa型液晶面板的制作方法及coa型液晶面板 - Google Patents

Coa型液晶面板的制作方法及coa型液晶面板 Download PDF

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WO2016145694A1
WO2016145694A1 PCT/CN2015/075852 CN2015075852W WO2016145694A1 WO 2016145694 A1 WO2016145694 A1 WO 2016145694A1 CN 2015075852 W CN2015075852 W CN 2015075852W WO 2016145694 A1 WO2016145694 A1 WO 2016145694A1
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Prior art keywords
layer
disposed
insulating layer
liquid crystal
drain
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PCT/CN2015/075852
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English (en)
French (fr)
Inventor
徐洪远
孙博
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深圳市华星光电技术有限公司
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Priority to US14/758,563 priority Critical patent/US20170038653A1/en
Publication of WO2016145694A1 publication Critical patent/WO2016145694A1/zh

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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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Abstract

一种COA型液晶面板的制作方法及COA型液晶面板，该方法通过在色阻层（54）上形成一层平坦层（55），消除了相邻色阻块之间因重叠产生的断差，并在平坦层（55）上形成像素电极层（8），使像素电极层（8）位于各子像素区域的像素电极块的横向边界位于扫描线（35）上方，纵向边界位于信号线（7）上方，从而使阵列基板（1）在横向上靠扫描线（35）自身遮挡漏光，在纵向上靠信号线（7）自身遮挡漏光，不需要再使用黑色矩阵遮挡漏光，从而实现简化制程，提高开口率，并且在多晶硅层（4）的上、下方分别设置栅极（5）和非晶硅层（21）以遮挡光线，以防止沟道处产生光漏电从而对液晶层（3）造成影响，同时可避免阵列基板（1）与玻璃基板（2）对位不准或曲面显示中因面板弯曲而导致的漏光。

Description

COA型液晶面板的制作方法及COA型液晶面板 技术领域
本发明涉及显示技术领域，尤其涉及一种COA型液晶面板的制作方法及COA型液晶面板。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。通常液晶显示装置包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组(Backlight module)。其中，液晶面板的结构主要是由一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、一彩色滤光片基板(Color Filter，CF)、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
低温多晶硅(Low Temperature Poly Silicon，LTPS)TFT技术是一种新型技术，其优点在于，相比于非晶硅(a-si)和氧化物(oxide)型TFT，具有更高的载流子迁移率，能够增强显示器的驱动能力，降低功耗。现在主流的LTPS TFT为顶栅型结构，在用做液晶面板的显示时，由于TFT沟道下方没有遮光层，沟道会产生光漏电。目前防止光电流的方法是在玻璃基板上先沉积一层非晶硅作为保护层将光吸收掉，或者直接沉积一层金属来挡光。但在普通阵列基板结构中，在TFT位置的上方，液晶会因地形不平整及缺乏电压控制而出现杂乱的倒向，需要在CF基板一侧用很大一块面积的黑色矩阵(Black Matrix，BM)遮挡。
COA(Color filter On Array)是一种将CF基板上的色阻层制备于阵列基板上的技术，COA结构因减小了像素电极与金属走线的耦合，金属线上信号的延迟状况得到改善。COA结构可明显减小寄生电容大小，并提高面板开口率，改善面板显示品质。
请参阅图1，为一种现有COA型液晶面板的剖面示意图，主要包括阵列基板100、与所述阵列基板100相对设置的玻璃基板200、及位于所述阵列基板100与玻璃基板200之间的液晶层300。
图2为图1中的COA型液晶面板的阵列基板100的俯视示意图。所述 阵列基板100包括红、绿、蓝色子像素区域，每一子像素区域包括基板110、设于所述基板110上的非晶硅层210、设于所述非晶硅层210与基板110上的缓冲层310、位于所述非晶硅层210上方设于所述缓冲层310上的多晶硅层400、设于所述多晶硅层400与缓冲层310上的栅极绝缘层510、位于所述多晶硅层400上方设于所述栅极绝缘层510上的栅极500、设于所述栅极500与栅极绝缘层510上的层间绝缘层520、设于所述层间绝缘层520上的源/漏极600、设于所述层间绝缘层520上与所述源/漏极600相间隔的信号线700、设于所述源/漏极600、信号线700、及层间绝缘层520上的钝化层530、设于所述钝化层530上的色阻层540、及设于所述色阻层540上的像素电极层800。
所述多晶硅层400包括沟道430、位于沟道430两侧的两N型轻掺杂区域410、及位于两N型轻掺杂区域410外侧的两N型重掺杂区域420，所述层间绝缘层520、及栅极绝缘层510对应所述N型重掺杂区域420的上方设有第一过孔610，所述色阻层540、及钝化层530上对应所述源/漏极600的上方设有第二过孔810，所述源/漏极600分别经由所述第一过孔610与所述N型重掺杂区域420相接触，所述像素电极层800经由所述第二过孔810与所述源/漏极600相接触。所述玻璃基板200上设有黑色矩阵910，所述黑色矩阵910上设有公共电极层900。
该现有COA型液晶面板中，色阻层540对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，相邻色阻块之间在制程过程中会产生一定程度的交接区域640，交接区域640上方的液晶会因地形差异而出现倒向错乱，因而交接区域640上方采用玻璃基板200上的黑色矩阵910遮挡，但设置黑色矩阵910会损失掉很大一部分的开口率。
发明内容
本发明的目的在于提供一种COA型液晶面板的制作方法，不需要单独制作黑色矩阵，可简化制程，提高开口率，同时可避免阵列基板与玻璃基板对位不准或曲面显示中因面板弯曲而导致的漏光。
本发明的另一目的在于提供一种COA型液晶面板，结构简单，开口率高，能耗较低。
为实现上述目的，本发明提供一种COA型液晶面板的制作方法，包括如下步骤：
步骤1、提供阵列基板与玻璃基板；
所述阵列基板包括红、绿、蓝色子像素区域，每一子像素区域包括基 板、设于所述基板上的非晶硅层、设于所述非晶硅层与基板上的缓冲层、设于所述缓冲层上且对应所述非晶硅层设置的多晶硅层、设于所述多晶硅层与缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应所述多晶硅层设置的栅极、设于所述栅极绝缘层上的扫描线、设于所述栅极、扫描线与栅极绝缘层上的层间绝缘层、设于所述层间绝缘层上的源/漏极、及设于所述层间绝缘层上且在水平方向上与所述扫描线垂直交叉排列的信号线；
所述层间绝缘层、及栅极绝缘层上对应所述多晶硅层的上方形成有第一过孔，所述源/漏极分别经由所述第一过孔与所述多晶硅层相接触；
步骤2、在所述源/漏极、信号线、及层间绝缘层上形成钝化层；
步骤3、在所述钝化层上形成色阻层；
所述色阻层对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域，所述第一交接区域位于所述信号线上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线上方；
步骤4、在所述色阻层上形成平坦层，并在所述平坦层、色阻层、及钝化层上对应所述源/漏极的上方形成第二过孔；
步骤5、在所述平坦层上沉积并图案化像素电极层，在所述玻璃基板上形成公共电极层；
所述像素电极层经由所述第二过孔与所述源/漏极相接触，所述像素电极层包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线上方，纵向边界位于所述信号线上方；
步骤6、将所述阵列基板与玻璃基板对组，并灌入液晶层。
所述多晶硅层包括沟道、位于沟道两侧的两N型轻掺杂区域、及分别位于两N型轻掺杂区域外侧的两N型重掺杂区域，所述第一过孔对应设于N型重掺杂区域的上方，所述源/漏极分别经由所述第一过孔与N型重掺杂区域相接触。
所述步骤2采用化学气相沉积法形成所述钝化层。
所述步骤3采用涂布制程形成所述色阻层。
所述步骤4采用涂布制程形成所述平坦层，所述平坦层为透明有机材料。
所述步骤5采用物理气相沉积法形成所述像素电极层，所述像素电极层、及公共电极层的材料均为氧化铟锡。
本发明还提供一种COA型液晶面板，包括阵列基板、与所述阵列基板相对设置的玻璃基板、及位于所述阵列基板与玻璃基板之间的液晶层；
所述阵列基板包括红、绿、蓝色子像素区域，每一子像素区域包括基板、设于所述基板上的非晶硅层、设于所述非晶硅层与基板上的缓冲层、设于所述缓冲层上且对应所述非晶硅层设置的多晶硅层、设于所述多晶硅层与缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应所述多晶硅层设置的栅极、设于所述栅极绝缘层上的扫描线、设于所述栅极、扫描线与栅极绝缘层上的层间绝缘层、设于所述层间绝缘层上的源/漏极、设于所述层间绝缘层上且在水平方向上与所述扫描线垂直交叉排列的信号线、设于所述源/漏极、信号线、及层间绝缘层上的钝化层、设于所述钝化层上的色阻层、设于所述色阻层上的平坦层、及设于所述平坦层上的像素电极层；
所述层间绝缘层、及栅极绝缘层上对应所述多晶硅层的上方形成有第一过孔，所述平坦层、色阻层、及钝化层上对应所述源/漏极的上方形成有第二过孔；所述源/漏极分别经由所述第一过孔与所述多晶硅层相接触，所述像素电极层经由所述第二过孔与所述源/漏极相接触；
所述色阻层对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域，所述第一交接区域位于所述信号线上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线上方；所述像素电极层包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线上方，纵向边界位于所述信号线上方。
所述多晶硅层包括沟道、位于沟道两侧的两N型轻掺杂区域、及分别位于两N型轻掺杂区域外侧的两N型重掺杂区域，所述第一过孔对应设于N型重掺杂区域的上方，所述源/漏极分别经由所述第一过孔与N型重掺杂区域相接触。
所述平坦层为透明有机材料。
所述玻璃基板上设有公共电极层；所述素电极层、及公共电极层的材料均为氧化铟锡。
本发明还提供一种COA型液晶面板，包括阵列基板、与所述阵列基板相对设置的玻璃基板、及位于所述阵列基板与玻璃基板之间的液晶层；
所述阵列基板包括红、绿、蓝色子像素区域，每一子像素区域包括基板、设于所述基板上的非晶硅层、设于所述非晶硅层与基板上的缓冲层、设于所述缓冲层上且对应所述非晶硅层设置的多晶硅层、设于所述多晶硅层与缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应所述多晶硅层设置的栅极、设于所述栅极绝缘层上的扫描线、设于所述栅极、扫描线与栅极绝缘层上的层间绝缘层、设于所述层间绝缘层上的源/漏极、设于所述 层间绝缘层上且在水平方向上与所述扫描线垂直交叉排列的信号线、设于所述源/漏极、信号线、及层间绝缘层上的钝化层、设于所述钝化层上的色阻层、设于所述色阻层上的平坦层、及设于所述平坦层上的像素电极层；
所述层间绝缘层、及栅极绝缘层上对应所述多晶硅层的上方形成有第一过孔，所述平坦层、色阻层、及钝化层上对应所述源/漏极的上方形成有第二过孔，所述源/漏极分别经由所述第一过孔与所述多晶硅层相接触，所述像素电极层经由所述第二过孔与所述源/漏极相接触；
所述色阻层对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域，所述第一交接区域位于所述信号线上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线上方，所述像素电极层包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线上方，纵向边界位于所述信号线上方；
其中，所述多晶硅层包括沟道、位于沟道两侧的两N型轻掺杂区域、及分别位于两N型轻掺杂区域外侧的两N型重掺杂区域，所述第一过孔对应设于N型重掺杂区域的上方，所述源/漏极分别经由所述第一过孔与N型重掺杂区域相接触；
其中，所述平坦层为透明有机材料。
本发明的有益效果：本发明的COA型液晶面板及其制作方法，通过在色阻层上形成一层平坦层，消除了相邻色阻块之间因重叠产生的断差，并在平坦层上形成像素电极层，使像素电极层位于各子像素区域的像素电极块的横向边界位于扫描线上方，纵向边界位于信号线上方，从而使阵列基板在横向上靠扫描线自身遮挡漏光，在纵向上靠信号线自身遮挡漏光，不需要再使用黑色矩阵遮挡漏光，从而实现简化制程，提高开口率，并且在多晶硅层的上、下方分别设置栅极和非晶硅层以遮挡光线，以防止沟道处产生光漏电从而对液晶层造成影响，同时可避免阵列基板与玻璃基板对位不准或曲面显示中因面板弯曲而导致的漏光。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为一种现有COA型液晶面板的剖面示意图；
图2为图1中COA型液晶面板的阵列基板的俯视示意图；
图3为本发明COA型液晶面板的制作方法的流程图；
图4为本发明COA型液晶面板的制作方法的步骤1的示意图；
图5为本发明COA型液晶面板的制作方法的步骤2的示意图；
图6为本发明COA型液晶面板的制作方法的步骤3的示意图；
图7为本发明COA型液晶面板的制作方法的步骤4的示意图；
图8为本发明COA型液晶面板的制作方法的步骤5的示意图；
图9为本发明COA型液晶面板的制作方法的步骤6的示意图暨本发明COA型液晶面板的剖面示意图；
图10为本发明COA型液晶面板的阵列基板的俯视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明提供一种COA型液晶面板的制作方法，包括如下步骤：
步骤1、如图4所示，提供阵列基板1与玻璃基板2。
具体地，所述阵列基板1包括红、绿、蓝色子像素区域，每一子像素区域包括基板11、设于所述基板11上的非晶硅层21、设于所述非晶硅层21与基板11上的缓冲层31、设于所述缓冲层31上且对应所述非晶硅层21设置的多晶硅层4、设于所述多晶硅层4与缓冲层31上的栅极绝缘层51、设于所述栅极绝缘层51上且对应所述多晶硅层4设置的栅极5、设于所述栅极绝缘层51上的扫描线35、设于所述栅极5、扫描线35与栅极绝缘层51上的层间绝缘层52、设于所述层间绝缘层52上的源/漏极6、及设于所述层间绝缘层52上且在水平方向上与所述扫描线35垂直交叉排列的信号线7。
所述层间绝缘层52、及栅极绝缘层51上对应所述多晶硅层4的上方形成有第一过孔61，所述源/漏极6分别经由所述第一过孔61与所述多晶硅层4相接触。
具体的，所述多晶硅层4包括沟道43、位于沟道43两侧的两N型轻掺杂区域41、及分别位于两N型轻掺杂区域41外侧的两N型重掺杂区域42，所述第一过孔61对应设于N型重掺杂区域42的上方，所述源/漏极6 分别经由所述第一过孔61与N型重掺杂区域42相接触。
具体的，所述信号线7与扫描线35的材料为铝、钼或铜等金属材料。
步骤2、如图5所示，在所述源/漏极6、信号线7、及层间绝缘层52上形成钝化层53。
具体地，采用化学气相沉积(CVD)法形成所述钝化层53。
步骤3、如图6所示，在所述钝化层53上形成色阻层54。
具体地，所述色阻层54对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域64，所述第一交接区域64位于所述信号线7上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线35上方，从而省略了横向与纵向的黑色矩阵，实现扫描线与信号线自遮光。
具体地，采用涂布制程形成所述色阻层54。
步骤4、如图7所示，在所述色阻层54上形成平坦层55，并在所述平坦层55、色阻层54、及钝化层53上对应所述源/漏极6的上方形成第二过孔81。
具体地，采用涂布制程形成所述平坦层55，所述平坦层55为透明有机材料。
步骤5、如图8所示，在所述平坦层55上沉积并图案化像素电极层8，在所述玻璃基板2上形成公共电极层9。
所述像素电极层8经由所述第二过孔81与所述源/漏极6相接触，所述像素电极层8包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线35上方，纵向边界位于所述信号线7上方。
具体地，采用物理气相沉积(PVD)法形成所述像素电极层8，所述像素电极层8、及公共电极层9的材料均为氧化铟锡(ITO)。
步骤6、如图9所示，将所述阵列基板1与玻璃基板2对组，并灌入液晶层3。
具体地，在阵列基板1和玻璃基板2对位时，由于玻璃基板2上省去了黑色矩阵，在简化制程的同时，避免了因对位不准确而导致的漏光，同时也避免了在曲面显示器中由于黑色矩阵在面板弯曲时发生偏移而导致的漏光。
上述COA型液晶面板的制作方法，通过在色阻层上形成一层平坦层，消除了相邻色阻块之间因重叠产生的断差，并在平坦层上形成像素电极层，使像素电极层位于各子像素区域的像素电极块的横向边界位于扫描线上方，纵向边界位于信号线上方，从而使阵列基板在横向上靠扫描线自身 遮挡漏光，在纵向上靠信号线自身遮挡漏光，不需要再使用黑色矩阵遮挡漏光，从而实现简化制程，提高开口率，并且在多晶硅层的上、下方分别设置栅极和非晶硅层以遮挡光线，以防止沟道处产生光漏电从而对液晶层造成影响，同时可避免阵列基板与玻璃基板对位不准或曲面显示中因面板弯曲而导致的漏光。
请同时参阅图9、图10，本发明还提供一种COA型液晶面板，包括阵列基板1、与所述阵列基板1相对设置的玻璃基板2、及位于所述阵列基板1与玻璃基板2之间的液晶层3。
具体地，所述阵列基板1包括红、绿、蓝色子像素区域，每一子像素区域包括基板11、设于所述基板11上的非晶硅层21、设于所述非晶硅层21与基板11上的缓冲层31、设于所述缓冲层31上且对应所述非晶硅层21设置的多晶硅层4、设于所述多晶硅层4与缓冲层31上的栅极绝缘层51、设于所述栅极绝缘层51上且对应所述多晶硅层4设置的栅极5、设于所述栅极绝缘层51上的扫描线35、设于所述栅极5、扫描线35与栅极绝缘层51上的层间绝缘层52、设于所述层间绝缘层52上的源/漏极6、设于所述层间绝缘层52上且在水平方向上与所述扫描线35垂直交叉排列的信号线7、设于所述源/漏极6、信号线7、及层间绝缘层52上的钝化层53、设于所述钝化层53上的色阻层54、设于所述色阻层54上的平坦层55、及设于所述平坦层55上的像素电极层8。
所述层间绝缘层52、及栅极绝缘层51上对应所述多晶硅层4的上方形成有第一过孔61，所述平坦层55、色阻层54、及钝化层53上对应所述源/漏极6的上方形成有第二过孔81，所述源/漏极6分别经由所述第一过孔61与所述多晶硅层4相接触，所述像素电极层8经由所述第二过孔81与所述源/漏极6相接触。
具体地，所述多晶硅层4包括沟道43、位于沟道43两侧的两N型轻掺杂区域41、及分别位于两N型轻掺杂区域41外侧的两N型重掺杂区域42，所述第一过孔61对应设于N型重掺杂区域42的上方，所述源/漏极6分别经由所述第一过孔61与N型重掺杂区域42相接触。
所述色阻层54对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域64，所述第一交接区域64位于所述信号线7上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线35上方，所述像素电极层8包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线35上方，纵向边界位于所述信号线7上方。
具体地，所述平坦层55为透明有机材料；所述信号线7与扫描线35的材料为铝、钼或铜等金属材料。
具体地，所述玻璃基板2上设有公共电极层9，所述像素电极层8、及公共电极层9的材料均为氧化铟锡。
上述COA型液晶面板，通过在色阻层上形成一层平坦层，消除了相邻色阻块之间因重叠产生的断差，并在平坦层上形成像素电极层，使像素电极层位于各子像素区域的像素电极块的横向边界位于扫描线上方，纵向边界位于信号线上方，从而使阵列基板在横向上靠扫描线自身遮挡漏光，在纵向上靠信号线自身遮挡漏光，不需要再使用黑色矩阵遮挡漏光，从而实现简化制程，提高开口率，并且在多晶硅层的上、下方分别设置栅极和非晶硅层以遮挡光线，以防止沟道处产生光漏电从而对液晶层造成影响，同时可避免阵列基板与玻璃基板对位不准或曲面显示中因面板弯曲而导致的漏光。
综上所述，本发明的COA型液晶面板及其制作方法，通过在色阻层上形成一层平坦层，消除了相邻色阻块之间因重叠产生的断差，并在平坦层上形成像素电极层，使像素电极层位于各子像素区域的像素电极块的横向边界位于扫描线上方，纵向边界位于信号线上方，从而使阵列基板在横向上靠扫描线自身遮挡漏光，在纵向上靠信号线自身遮挡漏光，不需要再使用黑色矩阵遮挡漏光，从而实现简化制程，提高开口率，并且在多晶硅层的上、下方分别设置栅极和非晶硅层以遮挡光线，以防止沟道处产生光漏电从而对液晶层造成影响，同时可避免阵列基板与玻璃基板对位不准或曲面显示中因面板弯曲而导致的漏光。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (12)

  1. 一种COA型液晶面板的制作方法，包括如下步骤：
    步骤1、提供阵列基板与玻璃基板；
    所述阵列基板包括红、绿、蓝色子像素区域，每一子像素区域包括基板、设于所述基板上的非晶硅层、设于所述非晶硅层与基板上的缓冲层、设于所述缓冲层上且对应所述非晶硅层设置的多晶硅层、设于所述多晶硅层与缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应所述多晶硅层设置的栅极、设于所述栅极绝缘层上的扫描线、设于所述栅极、扫描线与栅极绝缘层上的层间绝缘层、设于所述层间绝缘层上的源/漏极、及设于所述层间绝缘层上且在水平方向上与所述扫描线垂直交叉排列的信号线；
    所述层间绝缘层、及栅极绝缘层上对应所述多晶硅层的上方形成有第一过孔，所述源/漏极分别经由所述第一过孔与所述多晶硅层相接触；
    步骤2、在所述源/漏极、信号线、及层间绝缘层上形成钝化层；
    步骤3、在所述钝化层上形成色阻层；
    所述色阻层对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域，所述第一交接区域位于所述信号线上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线上方；
    步骤4、在所述色阻层上形成平坦层，并在所述平坦层、色阻层、及钝化层上对应所述源/漏极的上方形成第二过孔；
    步骤5、在所述平坦层上沉积并图案化像素电极层，在所述玻璃基板上形成公共电极层；
    所述像素电极层经由所述第二过孔与所述源/漏极相接触，所述像素电极层包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线上方，纵向边界位于所述信号线上方；
    步骤6、将所述阵列基板与玻璃基板对组，并灌入液晶层。
  2. 如权利要求1所述的COA型液晶面板的制作方法，其中，所述多晶硅层包括沟道、位于沟道两侧的两N型轻掺杂区域、及分别位于两N型轻掺杂区域外侧的两N型重掺杂区域，所述第一过孔对应设于N型重掺杂区域的上方，所述源/漏极分别经由所述第一过孔与N型重掺杂区域相接触。
  3. 如权利要求1所述的COA型液晶面板的制作方法，其中，所述步骤2采用化学气相沉积法形成所述钝化层。
  4. 如权利要求1所述的COA型液晶面板的制作方法，其中，所述步骤3采用涂布制程形成所述色阻层。
  5. 如权利要求1所述的COA型液晶面板的制作方法，其中，所述步骤4采用涂布制程形成所述平坦层，所述平坦层为透明有机材料。
  6. 如权利要求1所述的COA型液晶面板的制作方法，其中，所述步骤5采用物理气相沉积法形成所述像素电极层，所述像素电极层、及公共电极层的材料均为氧化铟锡。
  7. 一种COA型液晶面板，包括阵列基板、与所述阵列基板相对设置的玻璃基板、及位于所述阵列基板与玻璃基板之间的液晶层；
    所述阵列基板包括红、绿、蓝色子像素区域，每一子像素区域包括基板、设于所述基板上的非晶硅层、设于所述非晶硅层与基板上的缓冲层、设于所述缓冲层上且对应所述非晶硅层设置的多晶硅层、设于所述多晶硅层与缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应所述多晶硅层设置的栅极、设于所述栅极绝缘层上的扫描线、设于所述栅极、扫描线与栅极绝缘层上的层间绝缘层、设于所述层间绝缘层上的源/漏极、设于所述层间绝缘层上且在水平方向上与所述扫描线垂直交叉排列的信号线、设于所述源/漏极、信号线、及层间绝缘层上的钝化层、设于所述钝化层上的色阻层、设于所述色阻层上的平坦层、及设于所述平坦层上的像素电极层；
    所述层间绝缘层、及栅极绝缘层上对应所述多晶硅层的上方形成有第一过孔，所述平坦层、色阻层、及钝化层上对应所述源/漏极的上方形成有第二过孔，所述源/漏极分别经由所述第一过孔与所述多晶硅层相接触，所述像素电极层经由所述第二过孔与所述源/漏极相接触；
    所述色阻层对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域，所述第一交接区域位于所述信号线上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线上方，所述像素电极层包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线上方，纵向边界位于所述信号线上方。
  8. 如权利要求7所述的COA型液晶面板，其中，所述多晶硅层包括沟道、位于沟道两侧的两N型轻掺杂区域、及分别位于两N型轻掺杂区域外侧的两N型重掺杂区域，所述第一过孔对应设于N型重掺杂区域的上方，所述源/漏极分别经由所述第一过孔与N型重掺杂区域相接触。
  9. 如权利要求7所述的COA型液晶面板，其中，所述平坦层为透明有机材料。
  10. 如权利要求7所述的COA型液晶面板，其中，所述玻璃基板上设有公共电极层；所述素电极层、及公共电极层的材料均为氧化铟锡。
  11. 一种COA型液晶面板，包括阵列基板、与所述阵列基板相对设置的玻璃基板、及位于所述阵列基板与玻璃基板之间的液晶层；
    所述阵列基板包括红、绿、蓝色子像素区域，每一子像素区域包括基板、设于所述基板上的非晶硅层、设于所述非晶硅层与基板上的缓冲层、设于所述缓冲层上且对应所述非晶硅层设置的多晶硅层、设于所述多晶硅层与缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应所述多晶硅层设置的栅极、设于所述栅极绝缘层上的扫描线、设于所述栅极、扫描线与栅极绝缘层上的层间绝缘层、设于所述层间绝缘层上的源/漏极、设于所述层间绝缘层上且在水平方向上与所述扫描线垂直交叉排列的信号线、设于所述源/漏极、信号线、及层间绝缘层上的钝化层、设于所述钝化层上的色阻层、设于所述色阻层上的平坦层、及设于所述平坦层上的像素电极层(8)；
    所述层间绝缘层、及栅极绝缘层上对应所述多晶硅层的上方形成有第一过孔，所述平坦层、色阻层、及钝化层上对应所述源/漏极的上方形成有第二过孔，所述源/漏极分别经由所述第一过孔与所述多晶硅层相接触，所述像素电极层经由所述第二过孔与所述源/漏极相接触；
    所述色阻层对应所述红、绿、蓝色子像素区域分别形成红、绿、蓝色阻块，横向排列的相邻的两色阻块之间形成第一交接区域，所述第一交接区域位于所述信号线上方，纵向排列的相邻的两色阻块之间形成第二交接区域，所述第二交接区域位于所述扫描线上方，所述像素电极层包括分别位于各子像素区域的像素电极块，所述像素电极块的横向边界位于所述扫描线上方，纵向边界位于所述信号线上方；
    其中，所述多晶硅层包括沟道、位于沟道两侧的两N型轻掺杂区域、及分别位于两N型轻掺杂区域外侧的两N型重掺杂区域，所述第一过孔对应设于N型重掺杂区域的上方，所述源/漏极分别经由所述第一过孔与N型重掺杂区域相接触；
    其中，所述平坦层为透明有机材料。
  12. 如权利要求11所述的COA型液晶面板，其中，所述玻璃基板上设有公共电极层；所述素电极层、及公共电极层的材料均为氧化铟锡。
PCT/CN2015/075852 2015-03-18 2015-04-03 Coa型液晶面板的制作方法及coa型液晶面板 WO2016145694A1 (zh)

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