TWI343952B - Method for silicon based dielectric chemical vapor deposition - Google Patents
Method for silicon based dielectric chemical vapor deposition Download PDFInfo
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- TWI343952B TWI343952B TW095120260A TW95120260A TWI343952B TW I343952 B TWI343952 B TW I343952B TW 095120260 A TW095120260 A TW 095120260A TW 95120260 A TW95120260 A TW 95120260A TW I343952 B TWI343952 B TW I343952B
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- Prior art keywords
- nitrogen
- substrate
- chemical
- carbon
- process chamber
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- 238000000034 method Methods 0.000 title claims description 107
- 238000005229 chemical vapour deposition Methods 0.000 title description 2
- 229910052710 silicon Inorganic materials 0.000 title description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 63
- 239000000758 substrate Substances 0.000 claims description 58
- 239000000126 substance Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 34
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 28
- 238000006243 chemical reaction Methods 0.000 claims description 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 16
- 229910052707 ruthenium Inorganic materials 0.000 claims description 16
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 claims description 12
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical group 0.000 claims description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- -1 nitrogen-containing compound Chemical group 0.000 claims description 5
- 239000001272 nitrous oxide Substances 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000003153 chemical reaction reagent Substances 0.000 claims description 4
- 239000012634 fragment Substances 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229930195733 hydrocarbon Natural products 0.000 claims description 3
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 3
- 150000001451 organic peroxides Chemical class 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 125000005270 trialkylamine group Chemical group 0.000 claims description 2
- 229910003828 SiH3 Inorganic materials 0.000 claims 5
- OLRJXMHANKMLTD-UHFFFAOYSA-N silyl Chemical compound [SiH3] OLRJXMHANKMLTD-UHFFFAOYSA-N 0.000 claims 5
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 2
- XKMRRTOUMJRJIA-UHFFFAOYSA-N ammonia nh3 Chemical compound N.N XKMRRTOUMJRJIA-UHFFFAOYSA-N 0.000 claims 1
- 238000006902 nitrogenation reaction Methods 0.000 claims 1
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 1
- 239000010410 layer Substances 0.000 description 57
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 28
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 18
- 230000008021 deposition Effects 0.000 description 10
- 238000005086 pumping Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910052727 yttrium Inorganic materials 0.000 description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- ABVVEAHYODGCLZ-UHFFFAOYSA-N tridecan-1-amine Chemical compound CCCCCCCCCCCCCN ABVVEAHYODGCLZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- ZWWCURLKEXEFQT-UHFFFAOYSA-N dinitrogen pentaoxide Chemical compound [O-][N+](=O)O[N+]([O-])=O ZWWCURLKEXEFQT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical compound C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- UDWPONKAYSRBTJ-UHFFFAOYSA-N [He].[N] Chemical compound [He].[N] UDWPONKAYSRBTJ-UHFFFAOYSA-N 0.000 description 1
- VMSKLDDPZGDWTO-UHFFFAOYSA-N [Y].[C] Chemical compound [Y].[C] VMSKLDDPZGDWTO-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- CRHGSCXKJPJNAB-UHFFFAOYSA-M fomesafen-sodium Chemical compound [Na+].C1=C([N+]([O-])=O)C(C(/[O-])=N/S(=O)(=O)C)=CC(OC=2C(=CC(=CC=2)C(F)(F)F)Cl)=C1 CRHGSCXKJPJNAB-UHFFFAOYSA-M 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical class CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Description
1343952 » 九、發明說明: . 【發明所屬之技術領域】 本發明之具體實例一般而言係關於用於沉積含矽材料 ' 之方法,且更具體而言,本發明之具體實例係關於用於熱 沉積氮化碎材料之化學氣相沉積技術。 【先前技術】
諸如氮化矽等含矽薄膜之熱化學氣相沉積法(C V D ) 是在製造半導體裝置時所使用的一種最先進技術的前段製 程。例如,在用於沉積氮化矽之熱C V D製程中,熱能係 用於使得一種或以上之包含矽前驅物的原料化學物發生斷 裂,以在基板表面形成氮化矽之薄膜。傳統的含矽材料之 熱C V D係典型地在提高之製程溫度下,在批式爐或在單 晶圓沉積室中實施。隨著裝置之幾何尺寸縮小以使得整合 更為快速,因此用於沉積薄膜之熱預算(thermal budget )必須加以降低,以達成避免裝置受到損壞、令人滿意的 加工結果、優良的生產良率、及穩固的裝置性能。雖然已 有某些使用沉積溫度為5 5 0 °C以下之用於含矽材料之C V D 製程的提案,但是並無僅使用熱處理(亦即,無電漿或光 子輔助之製程)已顯示在製造半導體裝置時具有適用於大 規模生產之利用價值。 因此,其係需要一種在低於約5 5 0 °C以下的溫度沉積 例如氮化矽之含矽材料的方法。 1343952 【發明内容】 本發明之具體實例一般而言係提供一種用於沉積之方 法,在一具體實例中,一種用於將含矽薄膜沉積在基板上 之方法係包括:將含有氮和碳之化學物流入沉積反應室; 將具有矽-氮鍵之含矽源化學物流入製程反應室;及將位 在反應室内之基板加熱至低於550 °C以下的溫度。在另一 具體實例,含矽化學物是三矽烷基胺,且含有氮和碳之化 學物是(CH3)3-N。
【實施方式】 〔本發明之最佳實施方式〕 本發明之具體實例係提供一種用於使用約 5 5 0 °C以下 之溫度將例如氮化矽等之含矽層沉積在基板上之方法。雖 然本發明將針對如第1圖所示之單晶圓熱化學氣相沉積( 製程)反應室1 0 0為例加以說明,但是該方法係也可相輔 相成實務應用在其他沉積系統,包括批式沉積系統在内。
此等之中,可實施氮化矽沉積製程之製程反應室係包括: 可獲自應用材料(Applied Materials)股份有限公司(加 州 Santa Clara)之 SINGEN®或 SINGEN Plus®製程反應室 。適合於實施本發明之其他系統的實例係包括:可獲自曰 本東京電子有限公司(Tokyo Electron Limited) 之 TELFORMULA®批式爐:可獲自應用材料股份有限公司之 F L E X S T A R ®迷你型批式矽沉積系統;及可獲自 ASM International N.V.之EPSILON®單晶圓蟲晶反應爐。 1343952 除熱 C V D之外,其他可用於沉積氮化矽材料之製程 係包括:脈衝-C V D '及原子層沉積(A L D )製程。在脈 衝-C V D製程中,例如石夕前驅物和反應物等之試劑係以共 流和脈衝導入製程反應室。在 A L D製程中,例如矽前驅 物和反應物等之化學藥劑,則係以各自和時序脈衝控制導 入製程反應室。電漿增強沉積技術也可使用於 ALD 或 CVD之任一製程中。在本文中所揭示之沉積製程中,可 將含矽材料沉積在單一基板或成批基板上。
在第1圖之具體實例中,製程反應室1 0 0係包括聯結 到泵送系統1 3 8之反應室本體1 0 2、控制器1 4 6、及氣體 控制面板(gas panel) 136。反應室本體 102具有壁 106 、底板 108、及限定内部容積 104之蓋110。本體 102之 壁 1 0 6係加以熱調節。在一具體實例中,數個導液路 1 1 2 係設置在壁1 0 6内,且加以構成為可用以調節反應室本體 102之溫度的熱傳液體在該導液路112内循環。壁106也 額外地包括一基板存取口 128,構成為使得基板122之工 件容易從製程反應室100進出。 基板支撐台座1 2 4係配置在反應室本體1 0 2之内部容 積104内,用以在加工處理時支撐基板122。基板支撐台 座1 2 4係包括構成為可調節基板 1 2 2之溫度和/或加熱製 程反應室100之内部容積104之加熱器120。如第1圖所 示之具體實例中,加熱器1 2 0是一種連接到電源1 1 6之電 阻加熱元件,且可將基板加熱至溫度為5 5 0 °C以上者。 台座升降機組1 3 0係聯結到基板支撐台座1 2 4,且係 1343952 構成為可在介於上升的加工處理位置(如第1圖所示)與 易於經由基板存取口 128存取位在台座124上的基板丨22 的下降位置之間控制台座1 2 4之高度。台座升降機組1 3 0 係以封閉方式使用撓性波紋管1 3 2聯結到反應室本體1 0 2 之底板108。台座升降機組130視需要也可構成為使得台 座124在加工處理時旋轉之方式。
氣體控制面板1 3 6係聯結到製程反應室1 0 0,且構成 為可對製程反應室本體之内部容積1 0 4供應製程用化學物 呈液體和/或氣體形態、及其他氣體。如第 1圖所示之具 體實例中,氣體控制面板1 3 6係經由氣體管線1 4 0聯結到 在反應室本體102之蓋110中所形成的進口 134。當然, 進口 134可形成為穿過反應室本體102的一個或以上之其 他位置。
噴淋頭 I 4 4係聯結到反應室本體1 0 2,用以改善由氣 體控制面板或液體注入器I 3 6所供應至製程反應室丨0 0之 内部容積1 0 4的氣體或蒸氣之均勻分佈。喷淋頭]4 4係包 括穿孔區1 5 4。在穿孔區1 5 4所形成的許多孔係以能提供 經通過喷淋頭1 44而到達基板1 2 2的氣體之預定流動分佈 之方式來構成其尺寸、幾何配置、數量和分佈 頂起銷1 1 4 (其中之一係展示於第1圖中)係配置用 於將基板丨22從基板支撐台座124之上表面分離,以易於 經由存取口 128伸入製程反應室本體之機械手(未圖示) 移出基板。如第1圖所示之具體實例中,頂起板]1 8係設 置在基板支撐台座 124之下面,且加以配置成使得台座 1343952 1 2 4在下降時,頂起銷1 1 4則將在台座1 2 4完成其下降行 程之前,即接觸到頂起板1丨8。藉此,頂起板 1 1 8將支撐 頂起銷1 1 4使得台座1 2 4繼續下降,頂起銷1 1 4從台座上 之表面伸出。頂起板 1 1 8之位置和/或頂起銷 1 1 4之長度 係構成為當台座1 2 4位於下降位置時,能使得基板1 2 2位 於與基板支撑台座124相隔,且通常是在與存取口 128排 成一線之位置。
泵送系統1 3 8係聯結到在反應室本體1 0 2所形成的泵 送口 1 2 6。泵送系統1 3 8通常是包括配置成可控制在製程 反應室1 0 0之内部容積1 0 4之内的壓力之節流閥及一個或 以上之泵。從内部容積104流向泵送口 126之氣體是可經 由泵送環1 4 2等之路徑,以改善氣體均勻地在基板1 2 2之 表面上流動。一種可相輔相成地適用於本發明之泵送環係 揭示於美國發明專利第10/9 11,208號,建檔於2004年10 月4日,其中全部之内容併入本文參考。
控制器1 4 6係聨結到製程反應室1 〇 0之各組件,以使 其容易控制如下所述氮化矽之沉積製程。控制器1 4 6通常 是包括中央處理單元(CPU) 150、記憶體148、及支援電 路152。CPU 150可為任何形態之可使用工業用調節裝置 之用於控制各反應室之電腦處理機及副處理機。記憶體 148、或電腦可讀之儲存媒體係可為一種或以上之可容易 獲得之記憶體,例如隨機存取記憶體(R A Μ )、唯讀記憶 體(R Ο Μ )、軟磁碟、硬碟、快閃記憶體、或任何其他形 態之區域性或遙控式數位儲存器等。支援電路丨5 2係聯結 1343952
到 C P U 1 5 Ο,以傳統方法支援處理機。此 係包括快取記憶體、電源、時鐘電路、幸 子系統等。例如,一種如下所述之含石夕材 之製程通常是儲存於記憶體 1 4 8,其係典 式。軟體程式也可加以儲存和/或藉由遙朽 控制的硬體之第二CPU (未圖示)來執行 沉積製程係描述為以軟體程式實施,但是 些方法步驟,係可在硬體及藉由軟體控制 ,本發明可在電腦系統上之軟體中執行、 體電路或其他類型之硬體中執行、或軟體 用。 第2圖係展示含矽材料沉積製程2 0 0 流程圖,其係可在製程反應室 1 0 0、或其 實施。方法200係從將基板122放置在基 上之步驟202開始。關於可實務應用本發 製程之具體實例之基板1 2 2係包括(但是 ):例如結晶質矽(例如,S i < 1 0 0 >、或 化矽、應變矽、矽在絕緣體上(S ΟI )、 或非換雜多晶石夕(polysilicon)等之半導 積含矽層之基板表面可為裸矽 '介電質材 、阻障性材料等。基板1 2 2在沉積含矽材 可藉由拋光、姓刻、還原、氧化、鹵 hydroxyl ation)、退火和/或烘培等步驟實 在步驟2 0 4中,基板1 2 2係加熱至低 等支援電路1 5 2 存入/輸出電路及 料沉積製程 200 型地作為軟體程 :以 CPU 1 5 0 所 。雖然本發明之 揭示於其中的某 器來實施。因此 在應用特定的積 與硬體之組合併 之一具體實例的 他適當的設備中 板支撐台座124 明之齔化矽沉積 並不受限於此等 Si< 1 1 1 > )、氧 鍺化矽、及摻雜 體晶圓。用於沉 料、導電性材料 料之前"視需要 化、氫氧化 ( 施預處理。 於約 5 5 0 °C以下 -10- 1343952
的溫度。視製造要求條件而定,基板122 至低於约 5 5 0 t以下的溫度。在一具體實 係藉由從電源1 16對電阻式加熱元件(亦 )施加電力,以將基板1 2 2加熱至溫度為 5 0 0 °C之間,而在另一具體實例中,基板 450°C以下。 在步驟206中,含有氮和碳之化學物 應室1 0 0之内部容積。含有氮和碳之化學 控制面板136供應至進口 134。含有氪和 呈液體和/或氣體形態。 在一具體實例中,含有氮和碳之化學 CXNYR(N)之化學式,其中 R(C)係氮或其 、R(N)係氮或其他含氮化合物基,且X及 等之中,適用之含有氮和碳之氣體的實例 不受限於此等)·· (CH3)3-N、H3C-NH2、 ΝΗ2、甲基聯胺、(H3C)-N = N-H、及 HC = n 另一可行的含有氮和碳之化學物係可 種可在 500 °C以下解離、在室溫下具有高 、氮和氫之化合物》此等之中,其他適當 化學物的實例係包括(但是並不受限於il 在2 5 °C之蒸氣壓為約3 5 3 k P a )、甲基勒 25°C之蒸氣壓為約 66 kPa)、及氫氰醆 之蒸氣壓為約9 8.8 Ic P a )。
在步驟 208中,具有至少一個 Si-N 也可視需要加熱 例中,基板 122 即,加熱器120 介於約3 0 0與約 1 2 2係力口熱至約 是供應至製程反 物通常是從氣體 碳之化學物可為 物是具有 R(C)-他碳氫化合物基 y係正整數。此 係包括(但是並 曱胺、h3c-nh- 具有特徵為:一 蒸氣壓的含有碳 的含有氮和碳之 :匕等):CH5N ( $ 胺(ch6n2 ;在 (CHN ;在 2 5°C 鍵的矽源化學物 (51 -11 - 1343952
流係從氣體控制面板1 3 6經由喷淋頭1 4 4供應至 體 1 0 2之内部容積 1 0 4。矽源化學物可為呈液彳 體形態。在一具體實例中,矽源化學物係包含: 、(SiR3)2N-N(SiR3)2、和(SiR3)N = (SiR3)N 中之 ,其中該 R係氫(Η )、或碳氫化合物試劑、或 乙基、苯基、三級丁基、及其組合物所組成 fragment)。在一具體實例中,該R係不含鹵素 。在另一具體實例中,該 R係包含一種或以上 且含有氫。此等之中,適當的矽源氣體是包含: N、(SiH3)2N-N(SiH3)2、(SiH3)N = (SiH3)N、及三 雖然介於氣體控制面板1 3 6與進口 1 3 4之間 佈置一氣體管線 1 4 0,但是可預期的是矽源氣體 和碳之化學物係可在分開的氣體管線供應至製 1 0 0。也可預期的是氣體管線可加以控制其溫度 又可預期的是可將在步驟206之含碳氣體連同在 之含氣和/或含石夕化學物一起同時、或依序導入 。藉此,步驟206可發生在步驟208之前,或步 發生在步驟 208之後。再者,步驟 206、208可 性控制化學物計量時間以確保原子層覆蓋率,且 步驟之間以吾所欲惰性氣體例如氬氣進行淨化。 由於石夕源化學物和含有氮和碳之化學物係在 反應室1 0 〇中結合,因此在加熱之基板1 2 2上係 氮化矽(S i 3 N 4 )薄膜之含矽材料。所沉積之含 反應室本 證和/或固 (SiR3)3-N 至少一種 由甲基、 的碎片( 而含有氫 之鹵元素 (SiH3)3-石夕炫基胺 係展示僅 和含有氮 程反應室 。此外, 步驟 208 進口 134 驟206可 執行選擇 允許在各 基板製程 形成例如 珍材料顯 -12- 1343952 示具有例如優良的折射率和濕式蝕刻速率等薄膜品質,且 沉積速率為大於 5 A/min。在一具體實例中,含矽薄膜係 以約10 A/min至約 500 A/min之速率沉積,且所沉積之 厚度為约10A至約Ι,ΟΟΟΑ。如上所述所形成的含矽薄膜 顯示具有低含氫量,且包含少量之可強化硼保持在 Ρ Μ Ο S (Ρ通道金屬氧半導體)裝置中的摻雜碳。在使用不含鹵 素之矽源氣體之具體實例中,可實現改善濕式蝕刻速率。
在步驟 206和/或 208步驟中,可提供載氣(carrier g a s )以控制含有氮和碳之化學物和/或矽源化學物之分壓 為數 m T 〇 r r至數百 T o r r,且控制在單晶圓反應室中之總 壓為約100 mTorr至约740 Torr。在另一具體實例中,在 製程反應室中之壓力為介於約10 Torr與740 ΊΓογγ之間。 在批式製程系統中,可供應載氣以控制含有氮和碳之化學 物和/或石夕源化學物之分壓為約1 0 0 m Τ 〇 r r至約1 Τ 〇 r r壓 力。此等之中,適當的載氣之實例係包括氮氣(N2 )、氬 氣(Ar)、及氦氣(He)。
在另一具體實例中,該方法200係包括:在步驟202 中,將基板1 2 2加熱至溫度為介於約3 0 0與約5 0 0 °C之間 (例如45 0 °C )。在步驟206中,將含有氮和碳之化學物 例如(C Η 3) 3 - N供應至製程反應室1 0 0。含有氮和碳之化學 物是以介於約 1 0 0 s c c m 至約 3,0 0 0 s c c m 之間(例如約 1,000 seem至約2,000 seem)之速率供應。在步驟208中 ,矽源化學物例如三矽烷基胺係以介於 1 s c c m 至約 300 s c c m之間,或在其他實例則以介於約 1 3 s c c m至約 1 3 0
⑧I -13 - 1343952 s c c m之間的速率供應至製程反應室1 ο 0。在載氣係與矽源 化學物結合之具體實例中,液體源之總速率為約 1 0 s c c m 至10,000 seem。通常(CH3)3-N對三矽烷基胺之流量比係 維持在約 1 0: 1 至約 1 : 1 之比率。在一具體實例中, (C Η 3) 3 - N相對於三矽烷基胺之流量比為3 : 1。
視需要可將氧前驅物添加到沉積方法2 0 0中,典型為 在步驟2 0 6和/或步驟2 0 8中,以形成氮化矽或氧氮化矽 。可使用於本文所揭示之沉積製程中之氧前驅物係包括: 氧原子、氧氣(〇2 )、臭氧(〇3 )、水(Η20 )、過氧化 氫(Η202)、有機過氧化物、醇類、一氧化二氮(ν2ο) 、一氧化氮(NO )、二氧化氮(N02 )、五氧化二氮( N 2 〇 5 )'其衍生物、及其組合物。
當將方法2 0 0如上所述實務應用在單晶圓製程反應室 100中時,則其係允許調整所沉積之薄膜,特別是具有管 理且控制薄膜之 Si/N/C/H含量的能力6藉由控制薄膜之 Si、N、C及 Η之相對含量,則例如濕式蝕刻速率、乾式 蝕刻速率、介電常數等之薄膜性能係可加以調整以使其符 合特定的應用。例如,藉由降低氫含量,則可沉積獲得具 有高抗拉應力之薄膜。 除此之外,藉由使用 N-Si-R或 N-Si-Si-R型之前驅 物,則矽源分子之解離係在較低溫度下發生,藉此即可使 得製程在較低溫度下進行。其理由為:與 S i - N鍵相比較 ,官能基(S i - R或 S i - S i )係屬於弱鍵之緣故。此外,在 本發明所使用之含氮源化學物係含有碳和氫之官能基,其 ⑧j -14- 1343952 係可與來自矽源中之N-Si-R或N-Si-Si-R的R或Si-R進 行反應,使得 R基變成解離,且比並未與氮源化學物反 應者更容易加以移除。因此,氮源化學物除了對最終薄膜 提供額外的氮和碳源以外,其在本製程中也可作用如同觸 媒。因此,氮源係有利於促進溫度為在例如約 5 5 0 °C以下 之低溫製程。
使用如上所述方法2 0 0所沉積之含矽材料,由於數種 物理性質而廣泛地使用於電子零組件及裝置。含矽-氮材 料是一種電絕緣體及阻障材料。當含氮化矽材料係配置介 於例如閘極材料與電極之間、或介於低介電常數之多孔性 材料與銅之間時,阻障特性會抑制離子在不同的材料或元 件之間擴散。因此,含氮化矽材料可使用於阻障層、保護 層、偏置層、間隔物層和上蓋層(capping layer)。氮化 矽材料之其他物理性質是具有高硬度。在某些應用中,含 矽材料可用作為各種光學裝置及工具等之保護被覆。然而 ,含氮化矽材料例如氮化矽之其他物理性質是可用作為在 氧化矽介電質層下之蝕刻停止層,以精確地控制蝕刻深度 ,而並不會發生過度蝕刻或蝕刻不足。此外,含矽-氮材 料之物理性質是其中碳和氫濃度可用於調整薄膜應力,例 如具有吾所欲應用之高抗拉應力。 在某些具體實例中,如第3A-B和4圖所示,氮化矽 材料係可沉積如同在 Μ 0 S F E T (金屬氧半導體場效應電晶 體)和雙極性電晶體中之各層。例如,第 3 Α圖係展示氮 化矽材料係沉積在一種含有凹入和提高兩者之源極/汲極 -15 - 1343952
之Μ 0 S F E T内部。源極/汲極層 3 1 2係藉由基板3 1 0之離 子佈植法所形成。通常基板3 1 0係經摻雜的η型,而源極 /汲極層 3 1 2係經摻雜的 ρ型材料。通常含有矽(S i )、 矽鍺(S i G e ) 或矽鍺碳(S i G e C )之含矽層 3 1 3 係藉由 C V D法選擇性地經磊晶生長在源極/汲極層 3 1 2上、或直 接生長在基板310上。含矽層314也是藉由CVD法選擇 性地經磊晶生長在含矽層3 1 3上。閘極阻障層3 1 8係用以 橋接被分段之含矽層3 1 3。通常閘極阻障層 3 1 8可為由氧 化矽、氧氮化矽' 氧化铪、或铪矽酸鹽所組成。局部地圍 繞閘極阻障層3 1 8的是間隔物3 1 6,其係通常為例如氣化 物/氧化物/氮化物堆(s t a c k )(例如,S i 3 N 4 / S i Ο 2 / S i 3 N 4 )等之隔離材料。另一可行方法是間隔物3 1 6可為氮化矽 材料之均質層,例如藉由在本文所揭示之各種方法所沉積 之氮化矽或氧氮化矽。閘極層 3 2 2 (例如,多晶矽)可具 有間隔物3 1 6和偏置層3 2 0位在任一側。偏置層3 2 0可為 藉由在本文所揭示之各種製程所沉積之氮化矽材料(例如 氮化矽)材料所組成。 第 3B圖係展示沉積在 MOSFET上之用於蝕刻源極/ 汲極層和閘極接觸介層洞(g a t e c ο n t a c t v i a )之蝕刻停止 層324。蝕刻停止層324可為藉由在本文所揭示之各種製 程所沉積之氮化矽材料例如氮化矽所組成。前置-金屬介 電質層(Pre-metal dielectric layer) 326 (例如,氧化石夕 )是沉積在蝕刻停止層3 2 4上,且包含在其上所形成的接 觸孔介層洞(contact hole vias) 328。 -16- 1343952
在另一具體實例中,第4圊係展示在本發明 實例中,所沉積之作為在雙極性電晶體内之數層 材料。含矽化合物層 4 3 4係沉積在先前已沉積在 之 η -型集極層 (collector layer) 432上。電晶 又包括:隔離層 433 (例如,Si〇2、SiOxNy、或 、接觸層 4 3 6 (例如,經大量摻雜之多晶矽) 4 3 8 (例如,S i 3 N 4 )、及第二隔離層 4 4 0 (例如 SiOxNy或Si3N4)。隔離層 433和440、及偏置 可藉由在本文所揭示之各種製程各自獨立地沉積 化矽、碳氮化矽 '和/或氮化矽等作為氮化矽材 具體實例中,隔離層4 3 3和4 4 0係含有氧氮化矽 層4 3 8係含有氣化石夕。 如上所述,本發明已提供一種用於沉積例如 之含矽層之方法。如上所述之方法係適合於製造 臨界尺寸(cr丨tical dimension)且要求低熱預算 用沉積低於約 5 5 0 °C以下的溫度)之裝置,其係 使用次9 0奈米技術來製造穩固的電路。 如上所述,本發明可提供一種用於沉積如氮 含矽層之方法。在前面揭示之方法,適合於具有 尺寸且由於使用低於約 5 5 (TC之沉積溫度而要求 的裝置之製造。其係有利於使用次 9 0奈米技術 固電路。 雖然如前所述係用於引導本發明之具體實例 設計本發明之其他及進一步的具體實例,而並不 之各具體 的氮化石夕 基板430 體進一步 Si3N4 ) 、偏置層 ,Si02 ' 層4 3 8係 例如氣氮 料。在一 ,且偏置 氮化矽等 具有小的 (由於使 可有利地 化矽等的 小的關鍵 低熱顸算 來製造堅 ,但是可 會脫離其 -17- 1343952 基本的範圍,且該範圍係根據如下所述申請專利範圍加以 設定。 【圖式簡單說明】
藉此方式則可詳細地理解到如上所例示本發明之特徵 方法,本發明之更特定的說明,如上所述者,將可藉由參 考具體實例而獲得了解,一部份係屐示於附加之圖式中。 然而,應了解到所附加之圖式係僅作為例示本發明之典型 的具體實例,且並非視為限制其範圍,本發明係承認熟習 此技藝者之其他等效的具體實例。 第1圖係供實施本發明氮化矽沉積方法的製程反應室 之一具體實例概略剖面圖。 第2圖係沉積氮化矽薄膜之方法的一具體實例流程圖 第3 A - B圓係具有至少一部份係根據第2圖之方法所 沉積的氮化矽層之MOSFET電晶體剖面圖。
第4圖係典型的具有至少一部份係使用第2圖之方法 所沉積的氮化矽層之雙極性電晶體剖面圖。 為容易暸解,其中係使用完全相同的元件符號,若可 能時,對於圖中共同的同一元件則附以相同符號。可預期 的是一具體實例之某些元件代表符號係可相輔相成並存於 其他具體實例。 【主要元件符號說明】 -18- 1343952
1 00 製 程 反 應 室 102 本 體 1 04 内 部 容 積 1 06 壁 108 底 板 110 蓋 112 導 液 路 114 頂 起 銷 116 電 源 118 頂 起 板 120 加 熱 器 122 基 板 1 24 台 座 126 泵 送 D 128 基 板 存 取 σ 13 0 台 座 升 降 機組 132 波 紋 管 1 34 進 口 136 氣 體 控 制 面板 138 泵 送 系 統 140 氣 體 管 線 142 泵 送 環 144 噴 淋 頭 146 控 制 器 -19- 1343952
148 記 憶 體 1 50 CPU ( 中 央處 理 早兀) 152 支 援 電 路 1 54 穿 孔 200 方 法 202 沉 積 步 驟 204 加 轨 »»»\ 步 驟 206 含 氮 氣 體 流入 步 驟 208 矽 源 氣 體 流入 步 驟 3 10 基 板 3 12 源 極 /汲相 i層 3 13 含 矽 層 3 16 間 隔 物 3 18 閘 極 阻 障 層 320 偏 置 層 322 閘 極 層 324 蝕 刻 停 止 層 326 介 電 質 層 328 介 層 洞 430 基 板 432 η型‘ 層 433 隔 離 層 434 化 合 物 層 43 6 接 觸 層 ⑧ -20-
J 1343952 43 8 偏置層 440 隔離層
Claims (1)
1343952 十、申請專利範圍: . 1 . 一種將一含矽薄膜沉積在一基板上之方法,其係包 括下列步驟: v 將位在一製程反應室内之一基板加熱至低於約 5 5 0 °C以 下的溫度; 將一含有氣和破之化學物流入該製程反應室; 將一具有矽-氮鍵之含矽源化學物流入該製程反應室; 及 Φ 將含有矽和氮之薄膜沉積在該基板上。 2. 如申請專利範圍第1項所述之方法,其中該含矽源 化 學物是(SiR3)3-N 、 (SiR3)2N-N(SiR3)2 、 及 (SiR3)N = (SiR3)N中之至少一種,其中該 R係氫(Η)、或 碳氫化合物試劑、或是一碎片(f r a g m e n t)(其係由甲基 '乙 基、苯基、三級丁基及其組合物所組成群組中選出)。
3. 如申請專利範圍第2項所述之方法,其中該 R係 不含鹵素而含有氫。 4. 如申請專利範圍第2項所述之方法,其中該 R係 包含一或多鹵素元素。 5. 如申請專利範圍第1項所述之方法,其中該含矽源 化學物是(SiH3)3-N。 1343952 6. 如申請專利範圍第1項所述之方法,其中該 化學物是(SiH3)2N-N(SiH3)2。 7. 如申請專利範圍第1項所述之方法,其中該 化學物是(SiH3)N = (SiH3)N。
8. 如申請專利範圍第1項所述之方法,其中該 化學物是三矽烷基胺。 9. 如申請專利範圍第1項所述之方法,其中該 和碳之化學物的化學式是 R(C)-CXNYR(N),其中該 氫或其他碳氫化合物基,且 R(N)是氮或其他含氮化
1 0.如申請專利範圍第1項所述之方法,其中該 和碳之氣體是H3C-NH2。 1 1 .如申請專利範圍第1項所述之方法,其中該 和碳之氣體是甲胺。 1 2.如申請專利範圍第1項所述之方法,其中該 含矽源 含矽源 含矽源 含有氣 R(C)是 合物基 含有氮 含有氮 含有氮 和碳之化學物是Η 3 C - N Η - N Η 2。 1343952 和碳 和碳 和碳
和碳 離之 和碳
板之 13. 如申請專利範圍第1項所述之方法,其中該含有氮 之化學物是甲基聯胺。 14. 如申請專利範圍第1項所述之方法,其中該含有氮 之化學物是(H3C)-N = N-H。 15. 如申請專利範圍第1項所述之方法,其中該含有氮 之化學物是HCeN。 1 6 ·如申請專利範圍第1項所述之方法,其中該含有氮 之化學物是在室溫下具有高蒸氣壓、可在5 Ο Ο ΐ以下解 含有碳、氮和氫的化合物。 17.如申請專利範圍第1項所述之方法,其中該含有氮 之化學物是CH5N、CH6N2和CHN中之至少一種。 1 8 ·如申請專利範圍第1項所述之方法,其中該加熱基 步驟更包括: 將基板加熱至一介於約3 0 0 °C至約5 0 0 °C間的溫度;及 將製程反應室内之壓力維持在約lOTorr至740 Torr之 間。 1 9.如申請專利範圍第1項所述之方法,其更包括: 將一氧前驅物流入製程反應室的步驟。· -24- ⑧ 1343952 20.如申請專利範圍第19項所述之方法,其中該氧前 驅物是氧原子、氧氣(〇2)、臭氧(〇3)、水(H20)、過 氧化氫(H202)、有機過氧化物、醇類、一氧化二氮(n2o )、一氧化氮(NO)、二氧化氮(N02)、五氧化二氮( N 2 〇 5 )、及其衍生物中之至少一種。
2 1 .如申請專利範圍第1項所述之方法,其中該含矽源 化 學物是(SiR3)3-N 、 (SiR3)2N-N(SiR3)2 、 及 (SiR3)N = (SiR3)N中之至少一種,其中該 R係氫(Η)、碳 氫化合物試劑、或由曱基、乙基、苯基、三級丁基、及其 組合物所組成的碎片;且其中該含有氮和碳之化學物的化 學式為 R(C)-CXNYR(N),其中該 R(C)是氫或其他碳氫化合 物基,且R(N)是氮或其他含氮化合物基。
2 2.如申請專利範圍第 21項所述之方法,其中該加熱 基板之步驟更包括: 將基板加熱至一介於約 3 0 0 °C至約 5 0 0 °C間之溫度的步 驟。 2 3 .如申請專利範圍第1項所述之方法,其中該沉積含 矽薄膜之步驟更包括: 沉積一單原子層之含石夕材料的步驟。 -25 - 1343952 24. —種將一含ί夕層沉積在一基板上之方法,其係包括 下列步驟: 將位在一製程反應室内之基板加熱至 55(TC以下的溫度 u % 將該製程反應室内之壓力維持在約 1 Ο T 〇 r r至約 7 4 0 T 〇 r r之間; 將(CH3)3-N流入該製程反應室; 以氬氣淨化該製程反應室; φ 將三矽烷基胺流入該製程反應室; 以氬氣淨化該製程反應室;及 沉積一含有矽和氮之層在該基板上。 2 5 .如申請專利範圍第 2 4項所述之方法,其中該加熱 基板之步驟更包括: 將基板加熱至一介於約 4 0 0 °C至約 5 0 0 °C之間的溫度的 步驟。
2 6.如申請專利範圍第 24項所述之方法,其中該加熱 基板之步驟更包括: 將基板加熱至低於約4 5 0 °C以下之溫度的步驟。 2 7 .如申請專利範圍第2 4項所述之方法,其更包括: 將一氧前驅物流入製程反應室的步驟。 -26- 1343952 2 8 .如申請專利範圍第 2 7項所述之方法,其中該氧前 驅物是氧原子 '氧氣(〇2 )、臭氧(〇3 )、水(H20 )、過 氧化氫(H202)、有機過氧化物、醇類、一氧化二氮(n2o )、一氧化氮(NO)、二氧化氮(N02)、五氧化二氮( N 2 0 5 )、及其衍生物中之至少一種。 29.如申請專利範圍第1項所述之方法,其中該含有氮 和碳之氣體是(CH3)3-N。
-27- ⑤
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US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
DE4214944A1 (de) * | 1992-05-06 | 1993-11-11 | Bayer Ag | Verfahren zur Herstellung von anorganischen Polymeren und deren Verwendung |
US6630413B2 (en) * | 2000-04-28 | 2003-10-07 | Asm Japan K.K. | CVD syntheses of silicon nitride materials |
WO2002080244A2 (en) * | 2001-02-12 | 2002-10-10 | Asm America, Inc. | Improved process for deposition of semiconductor films |
JP2003166060A (ja) * | 2001-11-30 | 2003-06-13 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | Cvd法によるシリコン窒化物膜、シリコンオキシ窒化物膜、またはシリコン酸化物膜の製造方法 |
US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
US20060084283A1 (en) * | 2004-10-20 | 2006-04-20 | Paranjpe Ajit P | Low temperature sin deposition methods |
US7473655B2 (en) * | 2005-06-17 | 2009-01-06 | Applied Materials, Inc. | Method for silicon based dielectric chemical vapor deposition |
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WO2006138103A2 (en) | 2006-12-28 |
JP2008547199A (ja) | 2008-12-25 |
TW200704819A (en) | 2007-02-01 |
US20060286818A1 (en) | 2006-12-21 |
WO2006138103A3 (en) | 2007-08-16 |
CN101199044A (zh) | 2008-06-11 |
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