JP7461926B2 - 3d nandのためのon積層体オーバレイの改善 - Google Patents
3d nandのためのon積層体オーバレイの改善 Download PDFInfo
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- 239000007789 gas Substances 0.000 claims description 262
- 239000000463 material Substances 0.000 claims description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 78
- 229910052710 silicon Inorganic materials 0.000 claims description 78
- 239000010703 silicon Substances 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 69
- 239000003085 diluting agent Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 39
- 239000001301 oxygen Substances 0.000 claims description 39
- 229910052760 oxygen Inorganic materials 0.000 claims description 39
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 38
- 238000010790 dilution Methods 0.000 claims description 27
- 239000012895 dilution Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 26
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 23
- 238000001459 lithography Methods 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910007264 Si2H6 Inorganic materials 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
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Description
を繰り返すこととをさらに含む。
Claims (14)
- 酸化物/窒化物(ON)層の積層体を形成する方法であって、
処理チャンバへと基板を移送することと、
前記基板を保持するペデスタルを堆積温度に加熱することと、
第1のケイ素含有ガス流量の第1のケイ素含有ガス、酸素含有ガス流量の酸素含有ガス、及び、第1の希釈ガス流量の第1の希釈ガスを前記処理チャンバ内へと流すことと、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスに対して、第1の高周波(RF:radio frequency)電力を対称的に印加して、二酸化ケイ素(SiO 2 )の第1の材料層を形成することと、
SiO 2 の前記第1の材料層の形成後に、前記第1のケイ素含有ガスの流れを停止させ、かつ、前記第1のRF電力を対称的に印加しながら前記酸素含有ガスの流れ及び前記第1の希釈ガスの流れを継続させることと、
第2のケイ素含有ガス流量の第2のケイ素含有ガス、窒素含有ガス流量の窒素含有ガス、及び、第2の希釈ガス流量の第2の希釈ガスを前記処理チャンバ内へと流すことと、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスに対して、第2のRF電力を対称的に印加して、窒化ケイ素(Si 3 N 4 )の第2の材料層を形成することと、
Si 3 N 4 の前記第2の材料層の形成後に、前記第2のケイ素含有ガスの流れを停止させ、かつ、前記第2のRF電力を対称的に印加しながら前記窒素含有ガスの流れ及び前記第2の希釈ガスの流れを継続させることと、
前記第1の材料層と前記第2の材料層との所望の数の材料層対が積層体を形成するまで、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスを流すこと、
前記第1のRF電力を対称的に印加すること、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスを流すこと、並びに、
前記第2のRF電力を対称的に印加すること
を繰り返すことと
を含む、方法。 - 前記処理チャンバから急速熱処理(RTP:Rapid Thermal Processing)チャンバへと前記基板を移送することと、
800℃を超えるアニーリング温度でアニールすること
をさらに含む、請求項1に記載の方法。 - 前記堆積温度が、500℃~650℃である、請求項1に記載の方法。
- 前記第1のケイ素含有ガスが、シラン、オルトケイ酸テトラエチル、及び、ジシランのうちの少なくとも1つを含み、前記酸素含有ガスが、亜酸化窒素、酸素ガス、及び、三酸素のうちの少なくとも1つを含み、前記第1の希釈ガスが、窒素ガス、アルゴン、及び、ヘリウムのうちの少なくとも1つを含む、請求項1に記載の方法。
- 前記第2のケイ素含有ガスは、シラン及びジシランのうちの少なくとも1つを含み、前記窒素含有ガスは、アンモニア及び窒素ガスのうちの少なくとも1つを含み、前記第2の希釈ガスは、窒素ガス、アルゴン、及びヘリウムのうちの少なくとも1つを含む、請求項1に記載の方法。
- 前記第1のケイ素含有ガス流量は、600sccm(標準立方センチメートル/分)~5000sccmであり、前記酸素含有ガス流量は、500sccm~15000sccmであり、前記第1の希釈ガス流量は、100sccm~20000sccmである、請求項1に記載の方法。
- 前記第2のケイ素含有ガス流量は、30sccm~300sccmであり、前記窒素含有ガス流量は、200sccm~7000sccmであり、前記第2の希釈ガス流量は、500sccm~3000sccmである、請求項1に記載の方法。
- 酸化物/窒化物(ON)層の積層体を形成する方法であって、
第1の処理チャンバへと基板を移送することと、
前記第1の処理チャンバの、前記基板を保持する第1のペデスタルを堆積温度に加熱することと、
第1のケイ素含有ガス流量の第1のケイ素含有ガス、酸素含有ガス流量の酸素含有ガス、及び、第1の希釈ガス流量の第1の希釈ガスを前記第1の処理チャンバ内へと流すことと、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスに対して、第1の高周波(RF:radio frequency)電力を対称的に印加して、二酸化ケイ素(SiO 2 )の第1の材料層を形成することと、
第2のケイ素含有ガス流量の第2のケイ素含有ガス、窒素含有ガス流量の窒素含有ガス、及び、第2の希釈ガス流量の第2の希釈ガスを前記第1の処理チャンバ内へと流すことと、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスに対して、第2のRF電力を対称的に印加して、窒化ケイ素(Si 3 N 4 )の第2の材料層を形成することと、
前記第1の材料層と前記第2の材料層との所望の数の材料層対の第1の部分が積層体を形成するまで、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスを流すこと、
前記第1のRF電力を対称的に印加すること、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスを流すこと、並びに、
前記第2のRF電力を対称的に印加すること
を繰り返すことと、
前記第1の処理チャンバから第2の処理チャンバへと前記基板を移送することと、
前記第2の処理チャンバの、前記基板を保持する第2のペデスタルを前記堆積温度に加熱することと、
前記第1の材料層と前記第2の材料層との前記所望の数の前記材料層対の第2の部分が前記積層体を形成するまで、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスを流すこと、
前記第1のRF電力を対称的に印加すること、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスを流すこと、並びに、
前記第2のRF電力を対称的に印加すること
を繰り返すことと
を含む、方法。 - 前記第2の処理チャンバから急速熱処理(RTP:Rapid Thermal Processing)チャンバへと前記基板を移送することと、
800°Cを超えるアニーリング温度でアニールすること
をさらに含む、請求項8に記載の方法。 - 前記第1のケイ素含有ガスが、シラン、オルトケイ酸テトラエチル、及び、ジシランのうちの少なくとも1つを含み、前記酸素含有ガスが、亜酸化窒素、酸素ガス、及び、三酸素のうちの少なくとも1つを含み、前記第1の希釈ガスが、窒素ガス、アルゴン、及びヘリウムのうちの少なくとも1つを含む、請求項8に記載の方法。
- 前記第2のケイ素含有ガスは、シラン及びジシランのうちの少なくとも1つを含み、前記窒素含有ガスは、アンモニア及び窒素ガスのうちの少なくとも1つを含み、前記第2の希釈ガスは、窒素ガス、アルゴン、及びヘリウムのうちの少なくとも1つを含む、請求項8に記載の方法。
- 前記第1のケイ素含有ガス流量は、600sccm~5000sccmであり、前記酸素含有ガス流量は、500sccm~15000sccmであり、前記第1の希釈ガス流量は、100sccm~20000sccmである、請求項8に記載の方法。
- 前記第2のケイ素含有ガス流量は、30sccm~300sccmであり、前記窒素含有ガス流量は、200sccm~7000sccmであり、前記第2の希釈ガス流量は、500sccm~3000sccmである、請求項8に記載の方法。
- 前記第2の希釈ガスがN2であり、前記第2の希釈ガス流量が2000sccmより大きい、請求項8に記載の方法。
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