JP2021532589A - 3d nandのためのon積層体オーバレイの改善 - Google Patents
3d nandのためのon積層体オーバレイの改善 Download PDFInfo
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- 239000007789 gas Substances 0.000 claims abstract description 268
- 239000000463 material Substances 0.000 claims abstract description 97
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 80
- 239000010703 silicon Substances 0.000 claims abstract description 80
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000001301 oxygen Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 150000004767 nitrides Chemical class 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 44
- 230000008021 deposition Effects 0.000 claims description 24
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 19
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 12
- 238000007865 diluting Methods 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- 238000010790 dilution Methods 0.000 claims description 5
- 239000012895 dilution Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001272 nitrous oxide Substances 0.000 claims description 3
- 229910000077 silane Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 26
- 210000004027 cell Anatomy 0.000 description 10
- 239000003085 diluting agent Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
Description
を繰り返すこととをさらに含む。
Claims (15)
- 酸化物/窒化物(ON)層の積層体を形成する方法であって、
処理チャンバへと基板を移送することと、
前記基板を保持するペデスタルを堆積温度に加熱することと、
第1のケイ素含有ガス流量の第1のケイ素含有ガス、酸素含有ガス流量の酸素含有ガス、及び、第1の希釈ガス流量の第1の希釈ガスを前記処理チャンバ内へと流すことと、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスに対して、第1の高周波(RF:radio frequency)電力を対称的に印加して、二酸化ケイ素(SiO2)の第1の材料層を形成することと、
第2のケイ素含有ガス流量の第2のケイ素含有ガス、窒素含有ガス流量の窒素含有ガス、及び、第2の希釈ガス流量の第2の希釈ガスを前記処理チャンバ内へと流すことと、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスに対して、第2のRF電力を対称的に印加して、窒化ケイ素(Si3N4)の第2の材料層を形成することと、
前記第1の材料層と前記第2の材料層との所望の数の材料層対が積層体を形成するまで、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスを流すこと、
前記第1のRF電力を対称的に印加すること、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスを流すこと、並びに、
前記第2のRF電力を対称的に印加すること
を繰り返すことと
を含む、方法。 - 前記処理チャンバから急速熱処理(RTP:Rapid Thermal Processing)チャンバへと前記基板を移送することと、
約800°Cを超えるアニーリング温度でアニールすること
をさらに含む、請求項1に記載の方法。 - 前記堆積温度が、約500℃〜約650℃である、請求項1又は2に記載の方法。
- 前記第1のケイ素含有ガスが、シラン(SiH4)、オルトケイ酸テトラエチル(TEOS)、及び、ジシラン(Si2H6)のうちの少なくとも1つを含み、前記酸素含有ガスが、亜酸化窒素(N2O)、酸素ガス(O2)、及び、三酸素(O3)のうちの少なくとも1つを含み、前記第1の希釈ガスが、窒素ガス(N2)、アルゴン(Ar)、及び、ヘリウム(He)のうちの少なくとも1つを含む、請求項1から3のいずれか一項に記載の方法。
- 前記第2のケイ素含有ガスは、SiH4及びSi2H6のうちの少なくとも1つを含み、前記窒素含有ガスは、アンモニア(NH3)及びN2のうちの少なくとも1つを含み、前記第2の希釈ガスは、N2、Ar、及びHeのうちの少なくとも1つを含む、請求項1から4のいずれか一項に記載の方法。
- 前記第1のケイ素含有ガス流量は、約600sccm(標準立方センチメートル/分)〜約5000sccmであり、前記酸素含有ガス流量は、約500sccm〜約15000sccmであり、前記第1の希釈ガス流量は、約100sccm〜約20000sccmである、請求項1から5のいずれか一項に記載の方法。
- 前記第2のケイ素含有ガス流量は、約30sccm〜約300sccmであり、前記窒素含有ガス流量は、約2000sccm〜約7000sccmであり、前記第2の希釈ガス流量は、約500sccm〜約3000sccmである、請求項1から6のいずれか一項に記載の方法。
- 酸化物/窒化物(ON)層の積層体を形成する方法であって、
第1の処理チャンバへと基板を移送することと、
前記第1の処理チャンバの、前記基板を保持する第1のペデスタルを堆積温度に加熱することと、
第1のケイ素含有ガス流量の第1のケイ素含有ガス、酸素含有ガス流量の酸素含有ガス、及び、第1の希釈ガス流量の第1の希釈ガスを前記第1の処理チャンバ内へと流すことと、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスに対して、第1の高周波(RF:radio frequency)電力を対称的に印加して、二酸化ケイ素(SiO2)の第1の材料層を形成することと、
第2のケイ素含有ガス流量の第2のケイ素含有ガス、窒素含有ガス流量の窒素含有ガス、及び、第2の希釈ガス流量の第2の希釈ガスを前記第1の処理チャンバ内へと流すことと、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスに対して、第2のRF電力を対称的に印加して、窒化ケイ素(Si3N4)の第2の材料層を形成することと、
前記第1の材料層と前記第2の材料層との所望の数の材料層対の第1の部分が積層体を形成するまで、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスを流すこと、
前記第1のRF電力を対称的に印加すること、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスを流すこと、並びに、
前記第2のRF電力を対称的に印加すること
を繰り返すことと、
前記第1の処理チャンバから第2の処理チャンバへと前記基板を移送することと、
前記第2の処理チャンバの、前記基板を保持する第2のペデスタルを前記堆積温度に加熱することと、
前記第1の材料層と前記第2の材料層との前記所望の数の前記材料層対の第2の部分が前記積層体を形成するまで、
前記第1のケイ素含有ガス、前記酸素含有ガス、及び、前記第1の希釈ガスを流すこと、
前記第1のRF電力を対称的に印加すること、
前記第2のケイ素含有ガス、前記窒素含有ガス、及び、前記第2の希釈ガスを流すこと、並びに、
前記第2のRF電力を対称的に印加すること
を繰り返すことと
を含む、方法。 - 前記第2の処理チャンバから急速熱処理(RTP:Rapid Thermal Processing)チャンバへと前記基板を移送することと、
約800°Cを超えるアニーリング温度でアニールすること
をさらに含む、請求項8に記載の方法。 - 前記第1のケイ素含有ガスが、シラン(SiH4)、オルトケイ酸テトラエチル(TEOS)、及び、ジシラン(Si2H6)のうちの少なくとも1つを含み、前記酸素含有ガスが、亜酸化窒素(N2O)、酸素ガス(O2)、及び、三酸素(O3)のうちの少なくとも1つを含み、前記第1の希釈ガスが、窒素ガス(N2)、アルゴン(Ar)、及びヘリウム(He)のうちの少なくとも1つを含む、請求項10又は11に記載の方法。
- 前記第2のケイ素含有ガスは、SiH4及びSi2H6のうちの少なくとも1つを含み、前記窒素含有ガスは、アンモニア(NH3)及びN2のうちの少なくとも1つを含み、前記第2の希釈ガスは、N2、Ar、及びHeのうちの少なくとも1つを含む、請求項8から10のいずれか一項に記載の方法。
- 前記第1のケイ素含有ガス流量は、約600sccm〜約5000sccmであり、前記酸素含有ガス流量は、約500sccm〜約15000sccmであり、前記第1の希釈ガス流量は、約100sccm〜約20000sccmである、請求項8から11のいずれか一項に記載の方法。
- 前記第2のケイ素含有ガス流量は、約30sccm〜約300sccmであり、前記窒素含有ガス流量は、約200sccm〜約7000sccmであり、前記第2の希釈ガス流量は、約500sccm〜約3000sccmである、請求項8から12のいずれか一項に記載の方法。
- 前記第2の希釈ガスがN2であり、前記第2の希釈ガス流量が約2000sccmより大きい、請求項8から13のいずれか一項に記載の方法。
- シャワーヘッドであって、
前記シャワーヘッド内に配置された対称高周波(RF:radio frequency)回路であって、90度の間隔をとって前記対称RF回路に接続された4つの部分を有するRF給電部によって、RF電源に接続された対称高周波(RF:radio frequency)回路
を備える、シャワーヘッド。
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