TWI342047B - System and method of silicon crystallization - Google Patents
System and method of silicon crystallization Download PDFInfo
- Publication number
- TWI342047B TWI342047B TW093104787A TW93104787A TWI342047B TW I342047 B TWI342047 B TW I342047B TW 093104787 A TW093104787 A TW 093104787A TW 93104787 A TW93104787 A TW 93104787A TW I342047 B TWI342047 B TW I342047B
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- Prior art keywords
- laser beam
- slits
- columns
- optical unit
- crystallization system
- Prior art date
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- 238000002425 crystallisation Methods 0.000 title claims abstract description 32
- 230000008025 crystallization Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 title abstract 2
- 239000010703 silicon Substances 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 claims abstract description 62
- 229910052732 germanium Inorganic materials 0.000 claims description 21
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 101700004678 SLIT3 Proteins 0.000 description 3
- 102100027339 Slit homolog 3 protein Human genes 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
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- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
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1342047 玖、發明說明: 【發明所屬之技術領,域】 本發明關於一種多晶化系統及方法,且特別是關於—種 形成-涛膜電晶體陣列面板之多晶石夕層之系統及方法。 【先前技術】 成薄膜電晶體(TFTs)於一液 大體上,料依其結晶狀態而分類成非晶碎及結晶石夕, 由:非晶料在低溫下沉積形成一薄膜,故其經常用於形 一低溶點 晶面板之玻璃基板上,且具有 惟’非晶⑪薄膜具有低場效遷移料缺點,因此需要呈 有大約30 Cn^see高場效遷移率、高頻率操作特徵、及低 漏電流之多晶石夕。 夕aa石夕薄膜之電力特徵明顯受到晶粒尺寸影響,例如, 晶粒越大則場效遷移率越高。 利用雷射束使晶粒生長於橫向之依序橫向固化(sls) 係經建議用於取得大晶粒。 此技術所採用之事實為鄰近於一固相區之液相區内之晶 粒生長係始於液相區與固相區之間之界面,且沿著一垂直 於界面之方向行進。在SLS技術中,一雷射束通過一具有複 數隙縫型透射區且相互錯開之遮罩,且炫化非晶石夕以形成 具有隙縫形狀之液相區。隨後’液相非晶♦冷卻而結晶。 如上所述,晶粒生長始於液相區與固相區之間之界面,其 並未曝露於雷射束’且在一垂直於界面之方向行進,及當 到達液相區中央時晶粒即停止生長。SLS可藉由在垂直於晶 91592.doc 粒生長方向移動遮罩而結晶全部薄膜。 另方面’雷射束具、有由一光學單元決定之形狀及能量, 光學單7C可以使畲射束僅有單一形狀及單一能量,據此, 其難以取得適用於多種區域之形狀及能量。 【發明内容】 提供一種矽結晶系統,其包括:一雷射束產生器,其產 生一雷射束;第一及第二光學單元,其用於控制雷射束產 生益之雷射束;及一平台,其用於安裝一面板,面板包括 一非晶石夕層,供由光學單元之雷射束予以多晶化’其中$ 一及第二光學單元使雷射束有不同形狀。 第光學單元使雷射束具有一橫緣及一較長於橫緣之縱 緣,及第二光學單元使雷射束具有一橫緣及一較短於橫緣 之縱緣。第一及第二光學單元之雷射束具有長方形狀。 面板可包含一顯示面板,其包括一顯示區、一閘極驅動 電路區、及一資料驅動電路區。 較佳為,顯示區及閘極驅動電路區係由第一光學單元所 控制之雷射束照射’且資料驅動電路區係由第二光學單元 所控制之雷射束照射。更佳為,顯示區及閘極驅動電路區 係透過一二次投射遮罩而照射,且資料驅動電路區係透過 一多次投射遮罩而照射。 一-人技射遮罩具有複數隙縫’用於界定出透射雷射束之 區域及形成二列,且二列中之隙縫較佳為錯開一等於隙縫 寬度之距離。 多次投射遮罩具有複數隙縫,用於界定出透射雷射束之 91592.doc 區域及形成三或多列,且諸列中之隙縫較佳為錯開—等於 或小於隙縫一半寬度,之距離。 ' 矽結晶系統可造一步包含一位置控制器,用於定位第一 及第二光學單元。 提供一種矽結晶系統,其包括:一雷射東產生器,其產 生—雷射束;一分束器,其用於將雷射束分成複數射束; 第—及第二光學單元,其用於控制分束器之射束;及一平 α,其用於安裝一面板,面板包括一非晶矽層,供由分束 器之射束予以多晶化,其中第一及第二光學單元使雷射束 有不同形狀。 - 第一光學單元使射束具有一橫緣及一較長於橫緣之縱 緣,及第二光學單元使射束具有一橫緣及一較短於橫緣之 縱緣。來自第一及第二光學單元之射束具有長方形狀。 面板可包括一顯示面板,其包括一顯示區'一閘極驅動 電路區、及一資料驅動電路區。 較佳為,顯示區及閘極驅動電路區係由第一光學單元所 控制之射束照射,且資料驅動電路區係由第二光學單元所 控制之射束照射。更佳為,顯示區及閘極驅動電路區係透 過一二次投射遮罩而照射,且資料驅動電路區係透過一多 次投射遮罩而照射。 二次投射遮罩具有複數隙縫,用於界定出透射射束之區 域及形成二列,且二列中之隙缝較佳為錯開—等於隙縫寬 度之距離。 多次投射遮罩具有複數隙縫,用於界定出透射雷射束之 91592.doc 1342047 區域及形成三或多列,且相鄰列中之隙縫較佳為錯開一等 於或小於隙縫一半寬,度之距離。 提供一種矽結晶之方法,其包括:沉積一非晶矽層於一 基板上,其具有一顯示區、一閘極驅動電路區、及一資料 驅動電路區m射束透過—具有複數隙縫可供透 射第一雷射束之第一遮罩,以照射於非晶矽層之顯示區及 閘極驅動區上,將—第一雷射束透過—具有複數隙縫可供 透射第二雷射束之第二遮罩,以照射於非晶矽層之資料驅 動區上’及將非晶矽層結晶’其中第—及第二雷射束之形 狀不同。 ' 第一雷射束可具有一橫緣及一較長於橫緣之縱緣,及第 二雷射束具有一橫緣及一較短於橫緣之縱緣。 第一及第一遮罩之隙縫形成複數列,且諸列中之隙縫係 錯開。較佳為’第一遮罩之隙縫形成二列,且第二遮罩之 隙縫形成至少三列。 第一及第二雷射束係選擇性產生自單一初始雷射束,或 藉由將單一初始雷射束分束而同時產生。 【貧施方式】 本發明現在即參考附圖完整說明於後,圖中揭示本發明 之實施例’惟’本發明另可用多種型式實施,且不應拘限 於本文内載述之實施例。 在圖式中,諸層、膜及區域之尺寸及相對尺寸為求清楚 而予以加大’圖中相同之參考編號係指相同元件。可以瞭 解的是,當一元件例如一層'膜、區域或基板稱為在另一 91592.doc 1342047 元件"上"時,其可直接在另一元件上或 卞丄^有亦可存在介置元 件。對比之下,當-元件稱為”直接,,在另—元件上時,則 不存在介置元件。 隨後’本發明實施例之m系統及方法係參考附圖說 明於後。 本發明實施例之-石夕結晶系統係參考圖…詳細說明於 後。 圖1係本發明實施例之石夕結晶系統之示意圖,及圖2係本 發明貫施例之液晶面板之平面圖。 請參閱圖丨’此實施例之一矽結晶系統包括一用於產生一 雷射束1之雷射束產生器10、用於控制雷射束產生器1〇所生 ,射束1形狀及能量之複數光學單元20、及—用於控制光學 早凡20位置之位置控制器4〇 “夕結晶系統進—步包括一平 。30,其女裝一液晶面板1〇〇且由光學單元之雷射束1照 射。 光學單元2〇包括一第一光學單元2卜用於成形雷射束i 以具有一長方形截面且具有短橫緣與長縱緣,及一第二光 學單元22 ’用於成形雷射束丨以具有-長方形截面且具有長 橫,與短縱緣。第一及第二光學單元21、22包括複數光學 子單元,以用於雷射束1之形狀及尺寸。 其中-光學子單元係經位置控制器40選定及設置於雷射 束產生器10與平台30之間。 液面板1 00包括一絕緣基板u 〇及—沉積於絕緣基板 上之非明石夕層1 50,以利於由雷射束產生器i 〇之雷射束 9l592.doc 1342047 予以結阳化。液晶面板1 〇〇包括一顯示區丨〇丨及一包括一閘 極驅動電路區102與一資料驅動電路區1〇3在内之周邊區, 貝料驅動電路區! 03係由需要高性能TFTs之類比-數位 (D/A)轉換(圖中未示)及數位-類比(D/A)轉換器(圖中未 示)提供。 依本發明之一實施例所示’顯示區1 〇丨及閘極驅動電路區 102係由一確保生產率之二次投射SLS製程予以結晶化,而 貧料驅動電路區1 〇3係由一確保高性能TFTs以及大生產率 之二或多次投射(文後稱為,,多次投射,')SLS製程予以結-晶 化。 首先,本發明實施例之二次投射SLS製程係參考圖3_5及 圖1、2說明於後。 圖3概略說明利用一雷射束將非晶矽結晶成多晶矽之二 次投射SLS製程,圖4說明由二次投射SLS製程形成之多晶 矽粒,及圖5說明二次投射SLS製程中之二次投射遮罩之移 動。 5月參閱圖2、3,一次投射s L S製程係透過一二次投射遮罩 300而將雷射束1照射於顯示區! 〇 1或資料驅動電路區1 上 之非晶矽層I 50之一曝光區上,二次投射遮罩包括具有隙縫 形狀之複數透射區3 1 0。 如圖5所示’二次投射遮罩300係在縱向加長,因此雷射 束1較佳為具有相同於遮罩300之形狀。據此,第一光學單 元21之其中一光學子單元設置於雷射束產生器1〇與平台3〇 之間,如圖1所示。 9l592.doc 1342047 二次投射遮罩300之隙縫3 1 0係在橫向加長及具有一寬度 W,且其在橫向形成二列G、Η,各列中之隙縫3丨〇彼此相隔 一預定距離,此較佳為等於隙縫3 1 0之寬度W,且二列中之 隙縫3 10係錯開—距離,此較佳為等於隙縫3 1〇之寬度w。 一次投射遮罩300覆蓋非晶矽層1 50之曝光區。 面向透射區310且由雷射束照射之非晶矽層15〇部分係完 全熔化,以形成液相區21〇,而由參考編號22〇所示之部分 仍在固相區内。液相區21〇之寬度及長度等於隙縫31〇者。 晶粒生長係開始於液相區21〇與固相區22〇之間之界面 230,且沿著一垂直於界面23〇之方向A,所生長之晶粒到達 液相區210之中間平面231,晶粒生長即止於此。 一旦元成曝光步驟(亦稱為一次投射),二次投射遮罩3〇〇 移動一等於隙縫310長度之距離,亦即等於二次投射遮罩 300在隙縫31〇長度方向中之-半寬度。隨後,先前步驟中 之曝光區係一部分重疊於此曝光步驟之曝光區,亦即,先 别曝光區之右半部再次變成此曝光區之左半部,而先前曝 光區之右半部内之固相區220係由雷射束照射,成為液相 區因此,一連續步驟中之非晶石夕層之所有重疊區皆呈多 晶化,且在二曝光步驟中形成之晶粒具有一等於隙縫3丨0寬 度w之寬度。 曝光步驟係由左至右重複且雷射束由左至右掃描,掃描 到達非晶矽層150之右緣後,二次投射遮罩3〇〇向下移動一 等於其長度之距離,且逐步向下掃描。隨後,遮罩3〇〇及掃 描之移動即由右至左。 9l592.doc 1342047 依此’非晶矽層1 50之所有區域皆呈多晶化。 一多次投射SLS製,程參考圖6及圖I、2詳細說明於後。 多次投射S L S叙程利用多次投射而徹底多晶化一非晶矽 層150之預定區’較佳為三至六次,而七或多次投射可用於 取得南性能TFTs。"多次投射” 一詞在本說明書中係指三或 多次投射。 圖6說明在多次投射SLS製程内之六次投射遮罩之移動。 凊參閱圖6,一六次投射遮罩6〇〇具有複數隙縫型透射區 610,其在橫向加長且形成六列g、η、I、J、κ、L,各列G、 Η、I、J、Κ或L包括一對彼此間隔之隙縫6 1丨^與6 1 2g、6 i i匕 與61211、6111與6121、611』與612<].、6111^與6121〇6111與612卜 較佳為二倍於隙縫61 〇之寬度。鄰近於二列G、H、i '】、κ、 L之隙縫6丨0係錯開一預定距離,其較佳為等於或小於隙縫 610之一半見度,且由左至右配置如降階般。最末列l内之
開一預定距離,其較 各列 G、Η、I、J、K 隙縫6111及最首列G内之隙縫612g亦錯 佳為等於或大於隙縫61〇之一半寬度。 或L内之隙縫6 10數量可為一、三或更多。 六次投射遮罩_係在橫向加長且雷射幻因而較佳具有 相同於遮罩600之形狀’據此,第二光學單元22之其中一光 學子單元設置於雷射束產生器1Q與平台3〇之間。 復显⑺、貝 、v「as ^ /苜iu < 一噪元 之遮罩000係對準於非晶守 > 彳$Λ 7層15 0,且一雷射束1透過遮 600照射以利多晶化。隨後,
田谷列G、H、I、J'k戍L 之隙縫010之間之距離為二# 一 。於隙縫610之寬度時,三分 9l592.doc •13· 1342047 一曝光區即結晶。多晶化後,遮罩咖移動-相等於隙縫610 長度之距離’亦即等於隙縫61〇長度方向令之六分之一隙縫 610寬度。接著,前次投射中之右方六分之五曝光區重疊於 此曝光步驟之曝光區。當相鄰列中之隙縫㈣錯開為隙縫 61〇之-半寬度時’則未在前次投射中曝光之四分之一部分 及在則-人技射中曝光之二分之_部分即由雷射束1照射以 利夕a日化。詳s之,面向隙縫6Uk之非晶矽層门〇之一區域 包括一未在前次投料曝光於雷射幻之上半部及-在前 次投射中透過隙縫6⑴而由雷射束⑽射之下半部,此次投 射中之該區域下半部内之晶粒生長係始於一位於其下方處 且形成於前次投射中之晶粒㈣,且朝上進行,此相同於 晶粒之生長方向。結果,在前次投射中形成之晶粒向上延 伸一等於隙縫6 10 —半寬度。 晶粒生長係在六次曝光步驟期間持續且晶粒具有三倍於 隙縫610寬度之寬度,多晶碎之大晶粒可供取得具有高電荷 載體遷移率之TFTs。 同樣地,一 η次投射SLS製程形成具有n/2寬度之晶粒。 本發明另一實施例之矽結晶系統將參考圖7、8詳細說明 於後。. 圖7係本發明另一實施例之矽結晶系統之示意圖,及圖8 係圖7所示本發明實施例之矽結晶系統之分束器之示意圖。 請參閱圖7 ’此實施例之一矽結晶系統包括一用於產生— 雷射束1之雷射束產生器10、一用於將雷射束產生器1〇所生 雷射束1分成複數相同能量射束2之分束器5〇、用於控制分 91592.doc 1342047 束器50所生射束2形狀及能量之複數光學單元2〇、及一用於 安裝一液晶面板1 〇〇、且由光學單元2〇之射束2照射之平台 30 〇 如圖8所示’分束器5〇包括提供於其内部之複數面鏡 Ml-Mn ’亦即第一至第η,各面鏡Ml-Mn係與雷射束1之行 進方向呈大約45度角。第一面鏡mi可以部分地透射雷射束 1以產生一射束2 ’其能量等於投射在分束器5〇上之雷射束j 之1/n能量,及部分地反射入射束以產生一雷射束,其具有 入射束1之剩餘部分(1_l/n)能量。第二至第(η_υ面.鏡 Μ2-Μη-1各將前一面鏡Μ1_Μη_2所反射之入射雷射束部分 地反射,以產生一射束2 ’其能量等於雷射束丨之丨化能量, 且部分地透射入射束以產生一輸出束,其具有入射束之剩 餘部分能量》隨後,來自第i(1<i<n)面鏡之輸出束具有等 於初始雷射束1之(l_l/n)能量,最後,第η面鏡Μη將一具有 1/n雷射束1能量之入射束全反射,以產生一射束2。 光學單元20包括一第一光學單元21,用於成形射束2以具 有一長方形截面且具有短橫緣與長縱緣,及一第二光學單 元2用於成形射束2以具有一長方形截面且具有長橫緣與 短縱緣。第一及第二光學單元21、22包括複數光學子單元, 以用於射束2之形狀及尺寸。 來自第一及第二光學單元2丨、22之射束2同時照射於非晶 矽層150上,例如,來自第一光學單元2丨之射束2透過一二 次投射遮罩而照射於顯示區丨〇1及閘極驅動電路區!02上, 而來自第一光學單元22之射束2透過一多次投射遮罩而照 91592.doc 15 射於資料驅動電路區丨〇3上 ―糸統及方法係使用複數光學單元而選擇性及同時 …'射不同形狀與能量 + — 董之田射束,稭此改善一裝置之生產率 及特徵。 儘官本發明已參考較佳實施例詳細說明於前,習於此技 者可以瞭解的是在不脫離文㈣請專利範該載之本發明 精神範疇下’仍可達成多種修改及變化。 【圖式簡單說明】 本發明將藉由參考附圖詳細說明其實施例於後以供瞭 解,其中: · 圖1係本發明實施例之矽結晶系統之示意圖; 圖2係本發明實施例之液晶面板之平面圖; 圖3概略說明利用一雷射束將非晶矽結晶成多晶矽之二 次投射SLS製程; 圖4說明由二次投射SLS製程形成之多晶矽粒; 圖5 5兒明二次投射SLS製程中之二次投射遮罩之移動; 圖6說明多次投射SLS製程内之六次投射遮罩之移動; 圖7係本發明另一實施例之矽結晶系統之示意圖;及 圖8係圖7所示本發明實施例之矽結晶系統之分束器之示 意圖。 【圖式代表符號說明】 雷射束 射束 雷射束產生器 9l592.doc 16- 1342047 20、 21、22 光學單元 30 平台 40 位置控制 器 50 分束器 100 液晶面板 101 顯不區 102 閘極驅動 電 路 區 103 資料驅動 電 路 區 110 絕緣基板 150 非晶矽層 210 液相區 220 固相區 230 界面 231 中間平面 300 二次投射遮 罩 3 10 隙縫 600 六次投射 遮罩 610 、6 11 g〜6111、 隙縫列 612g :-6121 Ml〜 Μη 面鏡 9l592.doc
Claims (1)
1342047 行年右月2^«修正本 第093104787號專利申請案 中文申請專利範圍替換本(99年6月) 拾、申請專利範圍: 1. 一種矽結晶系統,包含: 一雷射束產生器,其產生一雷射束; 第一及第二光學單元,其用於控制雷射束產生器之雷 射束;及 平口,其用於安裝一面板,面板包括一非晶石夕層, 供由光學單元之雷射束予以多晶化,其中來自該第一光 學單元之雷射束與來自該第二光學單元之雷射束具有不 同形狀。 2. 如申請專利範圍第丨項之矽結晶系統,其中第一光學單元 使田射束具有一;^緣及一較長於橫緣之縱緣,及第二光 學單/0使雷射束具有一橫緣及一較短於橫緣之縱緣。 3. 如申請專利範圍第2項之石夕結晶系統,其中來自第一及第 二光學單元之雷射束具有長方形狀。 4. 如申請專利範圍第3項之石夕結晶系統,其中面板包含一顯 示面板八包括顯示區、一閘極驅動電路區、及一資 料驅動電路區。 5. 如申請專利範圍第4項之石μ士 s么w ^ 步喝之石夕結Ba糸統’其中顯示區及閘極 驅動電路區係由第—朵爆α〜 先學早7C所控制之雷射束照射’且 資料驅動電路區係由第- 乐—九干早兀所控制之雷射束照 射0 6. 如申請專利範圍第5項之矽姓B <夕、、口日日系統,其中顯示區及閘 驅動電路區係透過—二4_ 人才又射遮罩而照射,且資料驅 電路區係透過一多次投射遮罩而照射。 91592-990622.doc 7. 8. 9. 10. 11. 12. 13. 14. 如申請專利範圍第6項之矽結晶系統,其中二次投射遮罩 具有歿數隙縫,用於界定出透射雷射束之區域及形成二 列’且二列中之隙縫係錯開。 申明專範圍第7項之石夕結晶系統,其中二列中之隙縫 係錯開一等於隙縫寬度之距離。 如申研專利範圍第6項之矽結晶系統其中多次投射遮罩 具有複數隙縫’用於界定出透射雷射束之區域及形成三 或多列’且諸列中之隙縫係錯開。 申"月專利範圍第9項之石夕結晶系統,其中相鄰列中之隙 縫係錯開-等於或小於隙縫一半寬度之距離。 如申請專利範圍第1項之矽結晶系統,進一步包含一位置 控制器,用於定位第一及第二光學單元。 一種矽結晶系統,包含: 雷射束產生器’其產生一雷射束; 一分束器’其用於將雷射束分成複數射束; 第一及第二光學單元’其用於控制分束器之射束;及 一平台,其用於安裝一面板,面板包括一非晶矽層, 供由分束器之射束予以多晶化,其中來自該第一光學單 元之雷射束與來自該第二光學單元之雷射束具有不同形 狀。 如申請專利範圍第12項之矽結晶系統,其中第一光學單 元使射束具有一橫緣及一較長於橫緣之縱緣,及第二光 予單元使射束具有一橫緣及一較短於橫緣之縱緣。 如申請專利範圍第13項之矽結晶系統,其中來自第一及 91592-990622.doc -2- 15. 16. 17. 18. 19. 20. 21. 22. 第二光學單元之射束具有長方形狀。 如申請專利範圍第丨4項之矽結晶系統,其中面板包含一 顯不面板,其包括一顯示區、一閘極驅動電路區、及一 資料驅動電路區。 如申請專利範圍第15項之矽結晶系統,其中顯示區及閘 極驅動電路區係由第一光學單元所控制之射束照射,且 資料驅動電路區係由第二光學單域控制之射束照射。 如申請專利範圍第16項之矽結晶系統,其中顯示區及閘 極驅動電路區係透過一二次投射遮罩而照射,且資料驅 動電路區係透過一多次投射遮罩而照射。 如申請專利範圍第17項之發結晶系統’其中二次投射遮 罩具有複數隙縫,用於界定出透射射束之區域及形成二 列’且二列中之隙縫係錯開。 如申請專利範圍第is項之m系統,其中二列中之隙 縫係錯開一等於隙縫寬度之距離。 如申請專利範圍第19項之#結晶系統,其中多次投射遮 罩^有複數隙縫’用於界定出透射雷射束之區域及形成 二或多列’且相鄰列中之隙縫係錯開。 如申請專利範圍第20項之♦結晶系統,其中相鄰列中之 隙縫係錯開—等於或小於隙縫一半寬度之距離。 一種矽結晶之方法,該方法包含: 沉積一非晶石夕層於-基板上,其具有一顯示區、一問 極驅動電路區、及一資料驅動電路區; 將一第一雷射束透過一具有複數隙縫可供透射第-雷 9I592-990622.doc 1342047
射束之第一遮罩,以照射於非晶 動區上; 矽層之顯示區及閘極驅 將一第二雷射束透過-具有複數隙縫可供透射第二+ 射束之第二遮罩,以照射於非㈣層之資料驅動區上;及田 將非晶^夕層結晶, 其中第一及第二雷射束之形狀不同。 23.
如申請專利範圍第22項之方法, 橫緣及一較長於橫緣之縱緣,及 及一較短於橫緣之縱緣。 其中第一雷射束具有— 第二雷射束具有—橫緣 24. 25. 如申請專利範圍第23項之方法,其中第—及第二遮罩之 隙縫形成複數列,且諸列中之隙縫係錯開。 如申請專利範圍第24項之方法,其中第一遮罩之隙縫形 成一列’且第一遮罩之隙縫形成至少三列。 26. 27.
如申凊專利範圍第22項之方法,其中第一及第 係選擇性產生自單一初始雷射束。 如申請專利範圍第22項之方法,其中第一及第 係藉由將單一初始雷射束分束而同時產生。 二雷射束 二雷射束 91592-990622.doc 4-
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2003
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2004
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- 2004-02-24 US US10/547,070 patent/US7879700B2/en not_active Expired - Fee Related
- 2004-02-24 CN CNB2004800050965A patent/CN100437940C/zh not_active Expired - Lifetime
- 2004-02-24 WO PCT/KR2004/000382 patent/WO2004077544A1/en active Application Filing
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KR100956339B1 (ko) | 2010-05-06 |
WO2004077544A1 (en) | 2004-09-10 |
JP2006519492A (ja) | 2006-08-24 |
JP4564486B2 (ja) | 2010-10-20 |
US7879700B2 (en) | 2011-02-01 |
KR20040076332A (ko) | 2004-09-01 |
CN1754253A (zh) | 2006-03-29 |
US20060148165A1 (en) | 2006-07-06 |
CN100437940C (zh) | 2008-11-26 |
TW200501272A (en) | 2005-01-01 |
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