TWI297549B - Thin film transistor, active matrix type display device, and their process - Google Patents

Thin film transistor, active matrix type display device, and their process Download PDF

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Publication number
TWI297549B
TWI297549B TW096137208A TW96137208A TWI297549B TW I297549 B TWI297549 B TW I297549B TW 096137208 A TW096137208 A TW 096137208A TW 96137208 A TW96137208 A TW 96137208A TW I297549 B TWI297549 B TW I297549B
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TW
Taiwan
Prior art keywords
layer
active layer
region
gate electrode
insulating film
Prior art date
Application number
TW096137208A
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English (en)
Chinese (zh)
Other versions
TW200812090A (en
Inventor
Kiyoshi Yoneda
Tsutomu Yamada
Shinji Yuda
Kouji Suzuki
Original Assignee
Sanyo Electric Co
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Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200812090A publication Critical patent/TW200812090A/zh
Application granted granted Critical
Publication of TWI297549B publication Critical patent/TWI297549B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
TW096137208A 2001-05-18 2002-05-17 Thin film transistor, active matrix type display device, and their process TWI297549B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001149453 2001-05-18
JP2002065794 2002-03-11

Publications (2)

Publication Number Publication Date
TW200812090A TW200812090A (en) 2008-03-01
TWI297549B true TWI297549B (en) 2008-06-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW096137208A TWI297549B (en) 2001-05-18 2002-05-17 Thin film transistor, active matrix type display device, and their process
TW091110334A TWI296134B (enExample) 2001-05-18 2002-05-17

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW091110334A TWI296134B (enExample) 2001-05-18 2002-05-17

Country Status (7)

Country Link
US (1) US6995048B2 (enExample)
EP (1) EP1388897A1 (enExample)
JP (1) JPWO2002095834A1 (enExample)
KR (1) KR100503581B1 (enExample)
CN (1) CN1462481A (enExample)
TW (2) TWI297549B (enExample)
WO (1) WO2002095834A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2003093370A (ja) * 2001-09-26 2003-04-02 Sony Corp 指紋検出装置
KR100846464B1 (ko) * 2002-05-28 2008-07-17 삼성전자주식회사 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법
TWI220072B (en) * 2003-02-19 2004-08-01 Toppoly Optoelectronics Corp TFT structure with LDD region and manufacturing process of the same
JP2005072573A (ja) * 2003-08-05 2005-03-17 Semiconductor Energy Lab Co Ltd 配線基板及びその作製方法、並びに半導体装置及びその作製方法
US8937580B2 (en) * 2003-08-08 2015-01-20 Semiconductor Energy Laboratory Co., Ltd. Driving method of light emitting device and light emitting device
JP4677713B2 (ja) * 2003-11-25 2011-04-27 セイコーエプソン株式会社 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置および電子機器
JP5072202B2 (ja) * 2004-07-30 2012-11-14 株式会社半導体エネルギー研究所 表示装置の作製方法
US8217396B2 (en) 2004-07-30 2012-07-10 Semiconductor Energy Laboratory Co., Ltd. Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region
US7524728B2 (en) * 2004-11-08 2009-04-28 Sanyo Electric Co., Ltd. Thin film transistor manufacturing method and organic electroluminescent display device
JP4731191B2 (ja) * 2005-03-28 2011-07-20 富士通セミコンダクター株式会社 半導体装置及び半導体装置の製造方法
KR100659112B1 (ko) * 2005-11-22 2006-12-19 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이의 제조 방법, 이를 구비한평판 디스플레이 장치
TWI267213B (en) * 2006-01-27 2006-11-21 Ind Tech Res Inst Organic light emitting device with integrated color filter and method of manufacturing the same
JP2009117620A (ja) * 2007-11-07 2009-05-28 Casio Comput Co Ltd 画像読取装置およびその製造方法
GB0811962D0 (en) * 2008-06-30 2008-07-30 Imp Innovations Ltd Improved fabrication method for thin-film field-effect transistors
KR101002665B1 (ko) * 2008-07-02 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는유기전계발광표시장치
JP2010245077A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置、光電変換装置の製造方法
TWI395334B (zh) * 2009-11-20 2013-05-01 Au Optronics Corp 薄膜電晶體元件及其製作方法
JP2012033778A (ja) * 2010-07-30 2012-02-16 Dainippon Printing Co Ltd 薄膜トランジスタとその製造方法、薄膜トランジスタアレイとその製造方法、及び、ディスプレイ装置
US8569129B2 (en) * 2011-05-31 2013-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics
US8988624B2 (en) 2011-06-23 2015-03-24 Apple Inc. Display pixel having oxide thin-film transistor (TFT) with reduced loading
CN103035653A (zh) * 2012-10-10 2013-04-10 深圳市华星光电技术有限公司 薄膜晶体管像素结构及其制作方法
CN103915507A (zh) * 2012-12-31 2014-07-09 瀚宇彩晶股份有限公司 氧化物薄膜晶体管结构及制作氧化物薄膜晶体管的方法
CN103413898B (zh) * 2013-08-29 2015-11-11 深圳市华星光电技术有限公司 有机发光二极管阳极连接结构及其制作方法
KR102137392B1 (ko) * 2013-10-08 2020-07-24 엘지디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102294480B1 (ko) * 2013-10-25 2021-08-27 삼성디스플레이 주식회사 박막 트랜지스터 기판, 박막 트랜지스터 기판의 제조 방법 및 박막트랜지스터 기판을 포함하는 표시 장치
CN103545319A (zh) * 2013-11-08 2014-01-29 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管阵列基板及其制作方法、显示装置
CN103715200A (zh) * 2013-12-19 2014-04-09 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
KR102302362B1 (ko) * 2014-02-24 2021-09-15 엘지디스플레이 주식회사 박막 트랜지스터 기판 및 이를 이용한 표시장치
CN103972243B (zh) * 2014-04-24 2017-03-29 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN104716196B (zh) * 2015-03-18 2017-08-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及显示装置
CN116154003A (zh) * 2015-11-20 2023-05-23 株式会社半导体能源研究所 半导体装置、包括该半导体装置的显示装置以及包括该半导体装置的电子设备
CN105810689B (zh) 2016-03-31 2019-04-02 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
KR102642198B1 (ko) 2016-04-04 2024-03-05 삼성디스플레이 주식회사 유기발광 디스플레이 장치
CN107039351B (zh) * 2017-04-05 2019-10-11 武汉华星光电技术有限公司 Tft基板的制作方法及tft基板
KR102600041B1 (ko) 2018-06-07 2023-11-08 삼성디스플레이 주식회사 유기 발광 표시 장치
US20200073189A1 (en) * 2018-08-30 2020-03-05 Sharp Kabushiki Kaisha Active matrix substrate, display device, and method for manufacturing active matrix substrate
CN109659357B (zh) 2018-12-18 2020-11-24 武汉华星光电半导体显示技术有限公司 薄膜晶体管和显示面板
JP2020129617A (ja) * 2019-02-08 2020-08-27 株式会社ジャパンディスプレイ 半導体装置および半導体装置の製造方法
CN109888021A (zh) * 2019-02-27 2019-06-14 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、阵列基板、显示装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02234134A (ja) * 1989-03-07 1990-09-17 Nec Corp 液晶表示装置用アクティブマトリクス基板
JP2857900B2 (ja) * 1989-12-28 1999-02-17 カシオ計算機株式会社 薄膜トランジスタの製造方法
US5508216A (en) * 1992-06-24 1996-04-16 Seiko Epson Corporation Thin film transistor, solid device, display device and manufacturing method of a thin film transistor
JP3257086B2 (ja) * 1992-11-12 2002-02-18 セイコーエプソン株式会社 相補性薄膜半導体装置の製造方法
JPH06252405A (ja) * 1993-02-22 1994-09-09 Fuji Xerox Co Ltd 薄膜半導体装置
JP3598121B2 (ja) * 1993-03-19 2004-12-08 ソニー株式会社 薄膜トランジスタの製造方法
JP3393420B2 (ja) 1995-02-28 2003-04-07 ソニー株式会社 半導体装置
US6100119A (en) * 1995-08-31 2000-08-08 Lg Electronics Inc. Thin film transistor and method for fabricating the same
JP3645378B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09311342A (ja) * 1996-05-16 1997-12-02 Semiconductor Energy Lab Co Ltd 表示装置
JPH10209454A (ja) * 1997-01-17 1998-08-07 Toshiba Corp 薄膜トランジスタの製造方法
JPH11111993A (ja) 1997-09-30 1999-04-23 Toshiba Corp 半導体装置の製造方法
JPH11109406A (ja) * 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 表示装置とその製造方法
JP2000183358A (ja) * 1998-07-17 2000-06-30 Sony Corp 薄膜半導体装置の製造方法
JP2001023899A (ja) 1999-07-13 2001-01-26 Hitachi Ltd 半導体薄膜とその半導体膜を用いた液晶表示装置及びその製造方法
JP3956572B2 (ja) * 2000-03-13 2007-08-08 セイコーエプソン株式会社 液晶装置用基板の製造方法

Also Published As

Publication number Publication date
CN1462481A (zh) 2003-12-17
KR20030029108A (ko) 2003-04-11
TWI296134B (enExample) 2008-04-21
KR100503581B1 (ko) 2005-07-25
JPWO2002095834A1 (ja) 2004-09-09
TW200812090A (en) 2008-03-01
US20040087067A1 (en) 2004-05-06
US6995048B2 (en) 2006-02-07
WO2002095834A1 (fr) 2002-11-28
EP1388897A1 (en) 2004-02-11

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