TWI296134B - - Google Patents
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- TWI296134B TWI296134B TW091110334A TW91110334A TWI296134B TW I296134 B TWI296134 B TW I296134B TW 091110334 A TW091110334 A TW 091110334A TW 91110334 A TW91110334 A TW 91110334A TW I296134 B TWI296134 B TW I296134B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- insulating film
- contact hole
- electrode
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 88
- 239000011229 interlayer Substances 0.000 claims abstract description 41
- 230000000149 penetrating effect Effects 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 487
- 239000010410 layer Substances 0.000 claims description 201
- 239000000758 substrate Substances 0.000 claims description 81
- 239000011159 matrix material Substances 0.000 claims description 56
- 238000004519 manufacturing process Methods 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 235000013372 meat Nutrition 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 description 156
- 239000011247 coating layer Substances 0.000 description 73
- 239000007772 electrode material Substances 0.000 description 22
- 239000004973 liquid crystal related substance Substances 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 19
- 229910052698 phosphorus Inorganic materials 0.000 description 18
- 239000011574 phosphorus Substances 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 15
- 238000000576 coating method Methods 0.000 description 14
- 238000000059 patterning Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 13
- 238000000137 annealing Methods 0.000 description 12
- -1 phosphorus ion Chemical class 0.000 description 11
- 238000002347 injection Methods 0.000 description 9
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- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
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- 239000011521 glass Substances 0.000 description 7
- 238000002513 implantation Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001568 sexual effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 240000005373 Panax quinquefolius Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002757 inflammatory effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
- H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001149453 | 2001-05-18 | ||
| JP2002065794 | 2002-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI296134B true TWI296134B (enrdf_load_stackoverflow) | 2008-04-21 |
Family
ID=26615339
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096137208A TWI297549B (en) | 2001-05-18 | 2002-05-17 | Thin film transistor, active matrix type display device, and their process |
| TW091110334A TWI296134B (enrdf_load_stackoverflow) | 2001-05-18 | 2002-05-17 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096137208A TWI297549B (en) | 2001-05-18 | 2002-05-17 | Thin film transistor, active matrix type display device, and their process |
Country Status (7)
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP2003093370A (ja) * | 2001-09-26 | 2003-04-02 | Sony Corp | 指紋検出装置 |
| KR100846464B1 (ko) | 2002-05-28 | 2008-07-17 | 삼성전자주식회사 | 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법 |
| TWI220072B (en) * | 2003-02-19 | 2004-08-01 | Toppoly Optoelectronics Corp | TFT structure with LDD region and manufacturing process of the same |
| JP2005072573A (ja) * | 2003-08-05 | 2005-03-17 | Semiconductor Energy Lab Co Ltd | 配線基板及びその作製方法、並びに半導体装置及びその作製方法 |
| US8937580B2 (en) * | 2003-08-08 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of light emitting device and light emitting device |
| JP4677713B2 (ja) * | 2003-11-25 | 2011-04-27 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置用基板の製造方法、電気光学装置および電子機器 |
| US8217396B2 (en) | 2004-07-30 | 2012-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising electrode layer contacting wiring in the connection region and extending to pixel region |
| JP5072202B2 (ja) * | 2004-07-30 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7524728B2 (en) * | 2004-11-08 | 2009-04-28 | Sanyo Electric Co., Ltd. | Thin film transistor manufacturing method and organic electroluminescent display device |
| JP4731191B2 (ja) * | 2005-03-28 | 2011-07-20 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
| KR100659112B1 (ko) * | 2005-11-22 | 2006-12-19 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터 및 이의 제조 방법, 이를 구비한평판 디스플레이 장치 |
| TWI267213B (en) * | 2006-01-27 | 2006-11-21 | Ind Tech Res Inst | Organic light emitting device with integrated color filter and method of manufacturing the same |
| JP2009117620A (ja) * | 2007-11-07 | 2009-05-28 | Casio Comput Co Ltd | 画像読取装置およびその製造方法 |
| GB0811962D0 (en) * | 2008-06-30 | 2008-07-30 | Imp Innovations Ltd | Improved fabrication method for thin-film field-effect transistors |
| KR101002665B1 (ko) * | 2008-07-02 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법 및 그를 포함하는유기전계발광표시장치 |
| JP2010245077A (ja) * | 2009-04-01 | 2010-10-28 | Epson Imaging Devices Corp | 光電変換装置、エックス線撮像装置、光電変換装置の製造方法 |
| TWI395334B (zh) * | 2009-11-20 | 2013-05-01 | Au Optronics Corp | 薄膜電晶體元件及其製作方法 |
| JP2012033778A (ja) * | 2010-07-30 | 2012-02-16 | Dainippon Printing Co Ltd | 薄膜トランジスタとその製造方法、薄膜トランジスタアレイとその製造方法、及び、ディスプレイ装置 |
| US8569129B2 (en) | 2011-05-31 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device-manufacturing scheme for increasing the density of metal patterns in inter-layer dielectrics |
| US8988624B2 (en) | 2011-06-23 | 2015-03-24 | Apple Inc. | Display pixel having oxide thin-film transistor (TFT) with reduced loading |
| CN103035653A (zh) * | 2012-10-10 | 2013-04-10 | 深圳市华星光电技术有限公司 | 薄膜晶体管像素结构及其制作方法 |
| CN103915507A (zh) * | 2012-12-31 | 2014-07-09 | 瀚宇彩晶股份有限公司 | 氧化物薄膜晶体管结构及制作氧化物薄膜晶体管的方法 |
| CN103413898B (zh) * | 2013-08-29 | 2015-11-11 | 深圳市华星光电技术有限公司 | 有机发光二极管阳极连接结构及其制作方法 |
| KR102137392B1 (ko) * | 2013-10-08 | 2020-07-24 | 엘지디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| KR102294480B1 (ko) * | 2013-10-25 | 2021-08-27 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 박막 트랜지스터 기판의 제조 방법 및 박막트랜지스터 기판을 포함하는 표시 장치 |
| CN103545319A (zh) * | 2013-11-08 | 2014-01-29 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜晶体管阵列基板及其制作方法、显示装置 |
| CN103715200A (zh) * | 2013-12-19 | 2014-04-09 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示装置 |
| KR102302802B1 (ko) * | 2014-02-24 | 2021-09-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판을 포함하는 표시장치 |
| CN103972243B (zh) * | 2014-04-24 | 2017-03-29 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
| CN104716196B (zh) * | 2015-03-18 | 2017-08-08 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板及显示装置 |
| WO2017085591A1 (ja) * | 2015-11-20 | 2017-05-26 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置を有する表示装置、及び該半導体装置を有する電子機器 |
| CN105810689B (zh) * | 2016-03-31 | 2019-04-02 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
| KR102642198B1 (ko) | 2016-04-04 | 2024-03-05 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 |
| CN107039351B (zh) * | 2017-04-05 | 2019-10-11 | 武汉华星光电技术有限公司 | Tft基板的制作方法及tft基板 |
| KR102600041B1 (ko) | 2018-06-07 | 2023-11-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| US20200073189A1 (en) * | 2018-08-30 | 2020-03-05 | Sharp Kabushiki Kaisha | Active matrix substrate, display device, and method for manufacturing active matrix substrate |
| CN109659357B (zh) | 2018-12-18 | 2020-11-24 | 武汉华星光电半导体显示技术有限公司 | 薄膜晶体管和显示面板 |
| JP2020129617A (ja) * | 2019-02-08 | 2020-08-27 | 株式会社ジャパンディスプレイ | 半導体装置および半導体装置の製造方法 |
| CN109888021A (zh) * | 2019-02-27 | 2019-06-14 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板、显示装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02234134A (ja) * | 1989-03-07 | 1990-09-17 | Nec Corp | 液晶表示装置用アクティブマトリクス基板 |
| JP2857900B2 (ja) * | 1989-12-28 | 1999-02-17 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
| KR100309934B1 (ko) * | 1992-06-24 | 2002-06-20 | 구사마 사부로 | 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 |
| JP3257086B2 (ja) | 1992-11-12 | 2002-02-18 | セイコーエプソン株式会社 | 相補性薄膜半導体装置の製造方法 |
| JPH06252405A (ja) | 1993-02-22 | 1994-09-09 | Fuji Xerox Co Ltd | 薄膜半導体装置 |
| JP3598121B2 (ja) | 1993-03-19 | 2004-12-08 | ソニー株式会社 | 薄膜トランジスタの製造方法 |
| JP3393420B2 (ja) | 1995-02-28 | 2003-04-07 | ソニー株式会社 | 半導体装置 |
| US6100119A (en) * | 1995-08-31 | 2000-08-08 | Lg Electronics Inc. | Thin film transistor and method for fabricating the same |
| JP3645378B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH09311342A (ja) | 1996-05-16 | 1997-12-02 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| JPH10209454A (ja) | 1997-01-17 | 1998-08-07 | Toshiba Corp | 薄膜トランジスタの製造方法 |
| JPH11111993A (ja) * | 1997-09-30 | 1999-04-23 | Toshiba Corp | 半導体装置の製造方法 |
| JPH11109406A (ja) * | 1997-09-30 | 1999-04-23 | Sanyo Electric Co Ltd | 表示装置とその製造方法 |
| JP2000183358A (ja) * | 1998-07-17 | 2000-06-30 | Sony Corp | 薄膜半導体装置の製造方法 |
| JP2001023899A (ja) | 1999-07-13 | 2001-01-26 | Hitachi Ltd | 半導体薄膜とその半導体膜を用いた液晶表示装置及びその製造方法 |
| JP3956572B2 (ja) * | 2000-03-13 | 2007-08-08 | セイコーエプソン株式会社 | 液晶装置用基板の製造方法 |
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2002
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- 2002-05-16 JP JP2002592199A patent/JPWO2002095834A1/ja active Pending
- 2002-05-16 EP EP02771711A patent/EP1388897A1/en not_active Withdrawn
- 2002-05-16 CN CN02801641A patent/CN1462481A/zh active Pending
- 2002-05-16 KR KR10-2003-7000738A patent/KR100503581B1/ko not_active Expired - Fee Related
- 2002-05-16 WO PCT/JP2002/004750 patent/WO2002095834A1/ja not_active Application Discontinuation
- 2002-05-17 TW TW096137208A patent/TWI297549B/zh not_active IP Right Cessation
- 2002-05-17 TW TW091110334A patent/TWI296134B/zh not_active IP Right Cessation
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| US20040087067A1 (en) | 2004-05-06 |
| KR20030029108A (ko) | 2003-04-11 |
| KR100503581B1 (ko) | 2005-07-25 |
| JPWO2002095834A1 (ja) | 2004-09-09 |
| CN1462481A (zh) | 2003-12-17 |
| TW200812090A (en) | 2008-03-01 |
| TWI297549B (en) | 2008-06-01 |
| WO2002095834A1 (fr) | 2002-11-28 |
| EP1388897A1 (en) | 2004-02-11 |
| US6995048B2 (en) | 2006-02-07 |
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