TWI288899B - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
- Publication number
- TWI288899B TWI288899B TW090125241A TW90125241A TWI288899B TW I288899 B TWI288899 B TW I288899B TW 090125241 A TW090125241 A TW 090125241A TW 90125241 A TW90125241 A TW 90125241A TW I288899 B TWI288899 B TW I288899B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid crystal
- signal line
- gate signal
- signal lines
- display device
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 230000008439 repair process Effects 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 47
- 239000010409 thin film Substances 0.000 claims description 25
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 18
- 102100036464 Activated RNA polymerase II transcriptional coactivator p15 Human genes 0.000 description 14
- 101000713904 Homo sapiens Activated RNA polymerase II transcriptional coactivator p15 Proteins 0.000 description 14
- 229910004444 SUB1 Inorganic materials 0.000 description 14
- 229910004438 SUB2 Inorganic materials 0.000 description 11
- 101100311330 Schizosaccharomyces pombe (strain 972 / ATCC 24843) uap56 gene Proteins 0.000 description 11
- 101150018444 sub2 gene Proteins 0.000 description 11
- 239000011159 matrix material Substances 0.000 description 10
- 230000005684 electric field Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136272—Auxiliary lines
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000359522A JP2002162644A (ja) | 2000-11-27 | 2000-11-27 | 液晶表示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI288899B true TWI288899B (en) | 2007-10-21 |
Family
ID=18831274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090125241A TWI288899B (en) | 2000-11-27 | 2001-10-12 | Liquid crystal display device |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US6975295B2 (enExample) |
| JP (1) | JP2002162644A (enExample) |
| KR (1) | KR100504228B1 (enExample) |
| CN (3) | CN1179238C (enExample) |
| TW (1) | TWI288899B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475535B (zh) * | 2008-11-21 | 2015-03-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002162644A (ja) * | 2000-11-27 | 2002-06-07 | Hitachi Ltd | 液晶表示装置 |
| KR100796749B1 (ko) | 2001-05-16 | 2008-01-22 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 어레이 기판 |
| US20070081108A1 (en) * | 2002-03-26 | 2007-04-12 | Tfpd Corporation | Array substrate and its manufacturing method |
| JP2004054069A (ja) * | 2002-07-23 | 2004-02-19 | Advanced Display Inc | 表示装置及び表示装置の断線修復方法 |
| JP4051237B2 (ja) | 2002-07-30 | 2008-02-20 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
| JP2004077718A (ja) * | 2002-08-15 | 2004-03-11 | Hitachi Displays Ltd | 液晶表示装置 |
| CN100374913C (zh) * | 2004-05-07 | 2008-03-12 | 精工爱普生株式会社 | 电光装置、电光装置用基板和电子设备 |
| JP2008513454A (ja) * | 2004-09-17 | 2008-05-01 | ベーリンガー インゲルハイム インターナショナル ゲゼルシャフト ミット ベシュレンクテル ハフツング | 大環状hcvプロテアーゼインヒビターの調製方法 |
| TW200617547A (en) * | 2004-11-19 | 2006-06-01 | Innolux Display Corp | A liquid crystal display device |
| JP2006171576A (ja) * | 2004-12-17 | 2006-06-29 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置及びその製造方法 |
| KR20060132264A (ko) * | 2005-06-17 | 2006-12-21 | 삼성전자주식회사 | 액정 표시 장치 및 그의 불량 화소 복구 방법 |
| WO2007020784A1 (ja) * | 2005-08-12 | 2007-02-22 | Sharp Kabushiki Kaisha | 表示装置、液晶表示装置および表示装置の製造方法 |
| KR101424784B1 (ko) * | 2006-01-10 | 2014-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 및 그의 제조방법 |
| JP5101161B2 (ja) * | 2006-06-21 | 2012-12-19 | 三菱電機株式会社 | 表示装置 |
| JP5191639B2 (ja) * | 2006-09-15 | 2013-05-08 | 株式会社ジャパンディスプレイイースト | 液晶表示装置 |
| KR101306239B1 (ko) * | 2006-11-03 | 2013-09-17 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그의 불량 화소 복구 방법 |
| TWI349152B (en) * | 2006-12-27 | 2011-09-21 | Au Optronics Corp | Pixel module and display device utilizing the same |
| TW200828593A (en) * | 2006-12-29 | 2008-07-01 | Innolux Display Corp | TFT substrate and method of fabricating the same |
| JP5032160B2 (ja) * | 2007-03-09 | 2012-09-26 | 三菱電機株式会社 | 表示装置及びその製造方法 |
| US8760479B2 (en) | 2008-06-16 | 2014-06-24 | Samsung Display Co., Ltd. | Liquid crystal display |
| KR101762112B1 (ko) | 2008-09-19 | 2017-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정표시장치 |
| CN101840116B (zh) * | 2009-03-16 | 2014-02-26 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
| CN101893977B (zh) * | 2009-05-19 | 2012-07-25 | 北京京东方光电科技有限公司 | 触摸屏、彩膜基板及其制造方法 |
| JP5302101B2 (ja) * | 2009-05-25 | 2013-10-02 | パナソニック液晶ディスプレイ株式会社 | 表示装置 |
| CN102023733B (zh) * | 2009-09-11 | 2012-11-14 | 北京京东方光电科技有限公司 | 触摸屏、彩膜基板及其制造方法 |
| CN102645802A (zh) * | 2011-05-06 | 2012-08-22 | 京东方科技集团股份有限公司 | Tft-lcd阵列基板及其制造、修复方法 |
| CN105527736B (zh) * | 2016-02-15 | 2019-01-18 | 京东方科技集团股份有限公司 | 一种阵列基板及其修复方法、显示面板和显示装置 |
| CN106549021B (zh) | 2016-12-02 | 2018-10-09 | 京东方科技集团股份有限公司 | 柔性显示基板、柔性显示装置及其修复方法 |
| CN106681036A (zh) * | 2017-03-29 | 2017-05-17 | 合肥京东方显示技术有限公司 | 阵列基板、显示面板及显示装置 |
| CN108051967B (zh) * | 2017-12-29 | 2020-11-13 | 深圳市华星光电技术有限公司 | 一种显示面板 |
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| JP2000250436A (ja) * | 1999-02-26 | 2000-09-14 | Nec Corp | 薄膜トランジスタアレイ及びその製造方法 |
| KR100318540B1 (ko) * | 1999-03-08 | 2001-12-22 | 윤종용 | 액정표시장치및그제조방법 |
| JP3756342B2 (ja) | 1999-04-12 | 2006-03-15 | 株式会社日立製作所 | 液晶表示装置 |
| JP2000321599A (ja) * | 1999-05-10 | 2000-11-24 | Hitachi Ltd | 液晶表示装置 |
| US6252705B1 (en) * | 1999-05-25 | 2001-06-26 | Schlumberger Technologies, Inc. | Stage for charged particle microscopy system |
| JP4497596B2 (ja) * | 1999-09-30 | 2010-07-07 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
| KR100628681B1 (ko) * | 1999-10-28 | 2006-09-28 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
| KR100686235B1 (ko) * | 2000-05-04 | 2007-02-22 | 삼성전자주식회사 | 액정 표시 장치용 기판 |
| KR100715904B1 (ko) * | 2000-05-10 | 2007-05-08 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
| JP2002162644A (ja) * | 2000-11-27 | 2002-06-07 | Hitachi Ltd | 液晶表示装置 |
| JP4318522B2 (ja) | 2003-10-06 | 2009-08-26 | 本田技研工業株式会社 | 多気筒内燃機関 |
-
2000
- 2000-11-27 JP JP2000359522A patent/JP2002162644A/ja active Pending
-
2001
- 2001-10-10 US US09/972,932 patent/US6975295B2/en not_active Expired - Lifetime
- 2001-10-12 TW TW090125241A patent/TWI288899B/zh not_active IP Right Cessation
- 2001-11-23 KR KR10-2001-0073367A patent/KR100504228B1/ko not_active Expired - Fee Related
- 2001-11-27 CN CNB011394811A patent/CN1179238C/zh not_active Expired - Fee Related
- 2001-11-27 CN CNB200410086923XA patent/CN100350303C/zh not_active Expired - Fee Related
- 2001-11-27 CN CNB2006100998969A patent/CN100437312C/zh not_active Expired - Fee Related
-
2005
- 2005-10-14 US US11/249,261 patent/US7339564B2/en not_active Expired - Lifetime
-
2008
- 2008-01-07 US US12/007,093 patent/US7986289B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI475535B (zh) * | 2008-11-21 | 2015-03-01 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
| US9570619B2 (en) | 2008-11-21 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9893089B2 (en) | 2008-11-21 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10243006B2 (en) | 2008-11-21 | 2019-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US10622381B2 (en) | 2008-11-21 | 2020-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11374028B2 (en) | 2008-11-21 | 2022-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US11776967B2 (en) | 2008-11-21 | 2023-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US12062663B2 (en) | 2008-11-21 | 2024-08-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1359020A (zh) | 2002-07-17 |
| US20060033130A1 (en) | 2006-02-16 |
| CN1605902A (zh) | 2005-04-13 |
| US20080117149A1 (en) | 2008-05-22 |
| CN1179238C (zh) | 2004-12-08 |
| US7339564B2 (en) | 2008-03-04 |
| CN1936681A (zh) | 2007-03-28 |
| CN100350303C (zh) | 2007-11-21 |
| JP2002162644A (ja) | 2002-06-07 |
| US20020050967A1 (en) | 2002-05-02 |
| KR20020041288A (ko) | 2002-06-01 |
| US7986289B2 (en) | 2011-07-26 |
| US6975295B2 (en) | 2005-12-13 |
| KR100504228B1 (ko) | 2005-07-27 |
| CN100437312C (zh) | 2008-11-26 |
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