TW300341B - - Google Patents
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- Publication number
- TW300341B TW300341B TW085105967A TW85105967A TW300341B TW 300341 B TW300341 B TW 300341B TW 085105967 A TW085105967 A TW 085105967A TW 85105967 A TW85105967 A TW 85105967A TW 300341 B TW300341 B TW 300341B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- pattern
- gate
- gold
- electrode
- Prior art date
Links
- 239000010408 film Substances 0.000 claims description 130
- 238000000034 method Methods 0.000 claims description 94
- 230000007547 defect Effects 0.000 claims description 74
- 230000008439 repair process Effects 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 239000004973 liquid crystal related substance Substances 0.000 claims description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 37
- 239000010931 gold Substances 0.000 claims description 36
- 229910052737 gold Inorganic materials 0.000 claims description 36
- 239000010409 thin film Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 30
- 238000001259 photo etching Methods 0.000 claims description 28
- 239000011651 chromium Substances 0.000 claims description 27
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 26
- 229910052804 chromium Inorganic materials 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 24
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 239000010936 titanium Substances 0.000 claims description 22
- 229910052719 titanium Inorganic materials 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 9
- 230000002950 deficient Effects 0.000 claims description 6
- 238000010422 painting Methods 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 230000008901 benefit Effects 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 101000905241 Mus musculus Heart- and neural crest derivatives-expressed protein 1 Proteins 0.000 claims 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 238000005034 decoration Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 235000012976 tarts Nutrition 0.000 claims 1
- 238000004804 winding Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- -1 giant Chemical compound 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- XXZCIYUJYUESMD-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(morpholin-4-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCOCC1 XXZCIYUJYUESMD-UHFFFAOYSA-N 0.000 description 1
- WWSJZGAPAVMETJ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-ethoxypyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OCC WWSJZGAPAVMETJ-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 101100493820 Caenorhabditis elegans best-1 gene Proteins 0.000 description 1
- 101100008044 Caenorhabditis elegans cut-1 gene Proteins 0.000 description 1
- 230000018199 S phase Effects 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QRRWWGNBSQSBAM-UHFFFAOYSA-N alumane;chromium Chemical compound [AlH3].[Cr] QRRWWGNBSQSBAM-UHFFFAOYSA-N 0.000 description 1
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229920005669 high impact polystyrene Polymers 0.000 description 1
- 239000004797 high-impact polystyrene Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- RONWGALEIBILOG-VMJVVOMYSA-N quinine sulfate Chemical compound [H+].[H+].[O-]S([O-])(=O)=O.C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21.C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21 RONWGALEIBILOG-VMJVVOMYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7131695A JPH08328035A (ja) | 1995-05-30 | 1995-05-30 | 液晶表示装置およびその製法ならびに点欠陥の修復方法 |
| JP15486495A JPH095786A (ja) | 1995-06-21 | 1995-06-21 | Ｔｆｔアレイ基板並びにこれを用いた液晶表示装置およびｔｆｔアレイ基板の製造方法 |
| JP15486395A JPH095785A (ja) | 1995-06-21 | 1995-06-21 | Ｔｆｔアレイ基板並びにこれを用いた液晶表示装置およびｔｆｔアレイ基板の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW300341B true TW300341B (enExample) | 1997-03-11 |
Family
ID=27316352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085105967A TW300341B (enExample) | 1995-05-30 | 1996-05-21 |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100363140B1 (enExample) |
| CN (1) | CN1105324C (enExample) |
| TW (1) | TW300341B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382221B (zh) * | 2006-12-29 | 2013-01-11 | Lg Display Co Ltd | 液晶顯示裝置之陣列基板 |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100471391B1 (ko) * | 1997-12-08 | 2005-06-07 | 비오이 하이디스 테크놀로지 주식회사 | 액정 표시 소자 |
| JP3712637B2 (ja) * | 2000-08-11 | 2005-11-02 | シャープ株式会社 | 液晶表示装置およびその欠陥修正方法 |
| JP2002162644A (ja) * | 2000-11-27 | 2002-06-07 | Hitachi Ltd | 液晶表示装置 |
| AU2003281005A1 (en) * | 2002-07-12 | 2004-02-02 | Sharp Kabushiki Kaisha | Wiring structure, display apparatus, and active device substrate |
| JP2004054069A (ja) * | 2002-07-23 | 2004-02-19 | Advanced Display Inc | 表示装置及び表示装置の断線修復方法 |
| CN100343743C (zh) * | 2003-06-24 | 2007-10-17 | 统宝光电股份有限公司 | 液晶显示器的激光修补方法与结构 |
| CN1299324C (zh) * | 2003-07-04 | 2007-02-07 | 友达光电股份有限公司 | 一种修补显示器面板上薄膜电晶体线路的方法 |
| JP4011002B2 (ja) * | 2003-09-11 | 2007-11-21 | シャープ株式会社 | アクティブ基板、表示装置およびその製造方法 |
| CN1324360C (zh) * | 2003-10-20 | 2007-07-04 | 申丰科技有限公司 | 免拆背光板的液晶面板亮点修补处理方法 |
| CN1560899B (zh) * | 2004-02-16 | 2010-05-05 | 友达光电股份有限公司 | 薄膜晶体管阵列基板及其修补方法 |
| CN100442479C (zh) * | 2004-04-28 | 2008-12-10 | 友达光电股份有限公司 | 薄膜晶体管阵列基板的修补方法以及薄膜的移除方法 |
| CN1324390C (zh) * | 2004-04-28 | 2007-07-04 | 友达光电股份有限公司 | 薄膜晶体管阵列基板及其修补方法 |
| CN1306332C (zh) * | 2004-04-29 | 2007-03-21 | 友达光电股份有限公司 | 薄膜晶体管阵列基板及其修补方法 |
| CN1306557C (zh) * | 2004-07-27 | 2007-03-21 | 友达光电股份有限公司 | 薄膜晶体管阵列基板及其修补方法 |
| CN100341155C (zh) * | 2004-11-16 | 2007-10-03 | 友达光电股份有限公司 | 象素结构与薄膜晶体管阵列及其修补方法 |
| CN100437223C (zh) * | 2005-09-30 | 2008-11-26 | 友达光电股份有限公司 | 显示器、显示器电路的修复结构及其制造方法 |
| CN101313346B (zh) * | 2005-11-24 | 2011-05-04 | 夏普株式会社 | 有源矩阵基板、液晶面板、显示装置、电视接收器以及这些基板和面板的修正方法和制造方法 |
| CN100454556C (zh) * | 2006-07-05 | 2009-01-21 | 友达光电股份有限公司 | 修补结构与主动元件阵列基板 |
| KR101041618B1 (ko) | 2008-04-24 | 2011-06-15 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판과 그 제조방법 |
| CN101285977B (zh) * | 2008-05-30 | 2010-06-02 | 昆山龙腾光电有限公司 | 液晶显示装置及其阵列基板 |
| CN101614916B (zh) | 2008-06-25 | 2012-05-30 | 北京京东方光电科技有限公司 | Tft-lcd像素结构和液晶显示器修复断线的方法 |
| CN103149755B (zh) * | 2011-12-06 | 2015-09-16 | 上海中航光电子有限公司 | 一种薄膜晶体管液晶显示装置及其修复方法 |
| CN102736341B (zh) * | 2012-07-10 | 2015-08-19 | 深圳市华星光电技术有限公司 | 一种液晶显示面板及其修复方法 |
| CN105654886A (zh) * | 2016-01-25 | 2016-06-08 | 重庆京东方光电科技有限公司 | 一种栅极驱动电路、其修复方法及显示装置 |
| KR102718044B1 (ko) * | 2016-11-09 | 2024-10-18 | 엘지디스플레이 주식회사 | 포토 센서 및 그를 구비하는 표시장치 |
| CN107515500A (zh) * | 2017-09-20 | 2017-12-26 | 深圳市华星光电技术有限公司 | 阵列基板、显示面板及像素修补方法 |
| US11735600B2 (en) | 2020-05-19 | 2023-08-22 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel layout and display panel having pixel layout |
| CN111627925B (zh) * | 2020-05-19 | 2023-10-13 | 深圳市华星光电半导体显示技术有限公司 | 像素布局及具有该像素布局的显示面板 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0786619B2 (ja) * | 1989-04-26 | 1995-09-20 | シャープ株式会社 | アクティブマトリクス表示装置 |
| JPH0421823A (ja) * | 1990-05-16 | 1992-01-24 | Hosiden Corp | 液晶表示素子の点欠陥の黒欠陥化法及び液晶表示素子 |
| JPH04261521A (ja) * | 1991-01-21 | 1992-09-17 | Mitsubishi Electric Corp | 液晶表示装置及びその表示欠陥修復方法 |
| JP2801104B2 (ja) * | 1992-01-29 | 1998-09-21 | シャープ株式会社 | アクテイブマトリックス駆動方式散乱型液晶表示装置の製造方法 |
-
1996
- 1996-05-21 TW TW085105967A patent/TW300341B/zh active
- 1996-05-30 CN CN96107917A patent/CN1105324C/zh not_active Expired - Fee Related
- 1996-05-30 KR KR1019960018811A patent/KR100363140B1/ko not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI382221B (zh) * | 2006-12-29 | 2013-01-11 | Lg Display Co Ltd | 液晶顯示裝置之陣列基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1105324C (zh) | 2003-04-09 |
| KR100363140B1 (ko) | 2003-08-14 |
| CN1142057A (zh) | 1997-02-05 |
| KR960042181A (ko) | 1996-12-21 |
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