KR100363140B1 - Tft어레이기판과이것을이용한액정표시장치및tft어레이기판의제조방법 - Google Patents

Tft어레이기판과이것을이용한액정표시장치및tft어레이기판의제조방법 Download PDF

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Publication number
KR100363140B1
KR100363140B1 KR1019960018811A KR19960018811A KR100363140B1 KR 100363140 B1 KR100363140 B1 KR 100363140B1 KR 1019960018811 A KR1019960018811 A KR 1019960018811A KR 19960018811 A KR19960018811 A KR 19960018811A KR 100363140 B1 KR100363140 B1 KR 100363140B1
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South Korea
Prior art keywords
electrode
pixel
liquid crystal
point defect
tft array
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Expired - Fee Related
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KR1019960018811A
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English (en)
Korean (ko)
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KR960042181A (ko
Inventor
히로카즈 사마모토
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가부시키가이샤 아드반스트 디스프레이
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Priority claimed from JP7131695A external-priority patent/JPH08328035A/ja
Priority claimed from JP15486495A external-priority patent/JPH095786A/ja
Priority claimed from JP15486395A external-priority patent/JPH095785A/ja
Application filed by 가부시키가이샤 아드반스트 디스프레이 filed Critical 가부시키가이샤 아드반스트 디스프레이
Publication of KR960042181A publication Critical patent/KR960042181A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
KR1019960018811A 1995-05-30 1996-05-30 Tft어레이기판과이것을이용한액정표시장치및tft어레이기판의제조방법 Expired - Fee Related KR100363140B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP95-131695 1995-05-30
JP7131695A JPH08328035A (ja) 1995-05-30 1995-05-30 液晶表示装置およびその製法ならびに点欠陥の修復方法
JP15486495A JPH095786A (ja) 1995-06-21 1995-06-21 Ｔｆｔアレイ基板並びにこれを用いた液晶表示装置およびｔｆｔアレイ基板の製造方法
JP15486395A JPH095785A (ja) 1995-06-21 1995-06-21 Ｔｆｔアレイ基板並びにこれを用いた液晶表示装置およびｔｆｔアレイ基板の製造方法
JP95-154864 1995-06-21
JP95-154863 1995-06-21

Publications (2)

Publication Number Publication Date
KR960042181A KR960042181A (ko) 1996-12-21
KR100363140B1 true KR100363140B1 (ko) 2003-08-14

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KR1019960018811A Expired - Fee Related KR100363140B1 (ko) 1995-05-30 1996-05-30 Tft어레이기판과이것을이용한액정표시장치및tft어레이기판의제조방법

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Country Link
KR (1) KR100363140B1 (enExample)
CN (1) CN1105324C (enExample)
TW (1) TW300341B (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471391B1 (ko) * 1997-12-08 2005-06-07 비오이 하이디스 테크놀로지 주식회사 액정 표시 소자
JP3712637B2 (ja) * 2000-08-11 2005-11-02 シャープ株式会社 液晶表示装置およびその欠陥修正方法
JP2002162644A (ja) * 2000-11-27 2002-06-07 Hitachi Ltd 液晶表示装置
WO2004008423A1 (en) * 2002-07-12 2004-01-22 Sharp Kabushiki Kaisha Wiring structure, display apparatus, and active device substrate
JP2004054069A (ja) * 2002-07-23 2004-02-19 Advanced Display Inc 表示装置及び表示装置の断線修復方法
CN100343743C (zh) * 2003-06-24 2007-10-17 统宝光电股份有限公司 液晶显示器的激光修补方法与结构
CN100388460C (zh) * 2003-07-04 2008-05-14 友达光电股份有限公司 一种修补显示器面板上薄膜晶体管线路的方法
JP4011002B2 (ja) * 2003-09-11 2007-11-21 シャープ株式会社 アクティブ基板、表示装置およびその製造方法
CN1324360C (zh) * 2003-10-20 2007-07-04 申丰科技有限公司 免拆背光板的液晶面板亮点修补处理方法
CN1560899B (zh) * 2004-02-16 2010-05-05 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN1324390C (zh) * 2004-04-28 2007-07-04 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN100442479C (zh) * 2004-04-28 2008-12-10 友达光电股份有限公司 薄膜晶体管阵列基板的修补方法以及薄膜的移除方法
CN1306332C (zh) * 2004-04-29 2007-03-21 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN1306557C (zh) * 2004-07-27 2007-03-21 友达光电股份有限公司 薄膜晶体管阵列基板及其修补方法
CN100341155C (zh) * 2004-11-16 2007-10-03 友达光电股份有限公司 象素结构与薄膜晶体管阵列及其修补方法
CN100437223C (zh) * 2005-09-30 2008-11-26 友达光电股份有限公司 显示器、显示器电路的修复结构及其制造方法
CN101313346B (zh) * 2005-11-24 2011-05-04 夏普株式会社 有源矩阵基板、液晶面板、显示装置、电视接收器以及这些基板和面板的修正方法和制造方法
CN100454556C (zh) * 2006-07-05 2009-01-21 友达光电股份有限公司 修补结构与主动元件阵列基板
KR100947273B1 (ko) 2006-12-29 2010-03-11 엘지디스플레이 주식회사 횡전계형 액정표시장치용 어레이 기판
KR101041618B1 (ko) 2008-04-24 2011-06-15 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
CN101285977B (zh) * 2008-05-30 2010-06-02 昆山龙腾光电有限公司 液晶显示装置及其阵列基板
CN101614916B (zh) * 2008-06-25 2012-05-30 北京京东方光电科技有限公司 Tft-lcd像素结构和液晶显示器修复断线的方法
CN103149755B (zh) * 2011-12-06 2015-09-16 上海中航光电子有限公司 一种薄膜晶体管液晶显示装置及其修复方法
CN102736341B (zh) * 2012-07-10 2015-08-19 深圳市华星光电技术有限公司 一种液晶显示面板及其修复方法
CN105654886A (zh) * 2016-01-25 2016-06-08 重庆京东方光电科技有限公司 一种栅极驱动电路、其修复方法及显示装置
KR102718044B1 (ko) * 2016-11-09 2024-10-18 엘지디스플레이 주식회사 포토 센서 및 그를 구비하는 표시장치
CN107515500A (zh) * 2017-09-20 2017-12-26 深圳市华星光电技术有限公司 阵列基板、显示面板及像素修补方法
US11735600B2 (en) 2020-05-19 2023-08-22 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel layout and display panel having pixel layout
CN111627925B (zh) * 2020-05-19 2023-10-13 深圳市华星光电半导体显示技术有限公司 像素布局及具有该像素布局的显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02284120A (ja) * 1989-04-26 1990-11-21 Sharp Corp アクティブマトリクス表示装置
KR910020474A (ko) * 1990-05-16 1991-12-20 후루하시 켄지 액정표시소자의 점결함의 흑색결함화법 및 액정표시소자
JPH04261521A (ja) * 1991-01-21 1992-09-17 Mitsubishi Electric Corp 液晶表示装置及びその表示欠陥修復方法
JPH05203988A (ja) * 1992-01-29 1993-08-13 Sharp Corp アクテイブマトリックス駆動方式散乱型液晶表示装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02284120A (ja) * 1989-04-26 1990-11-21 Sharp Corp アクティブマトリクス表示装置
KR910020474A (ko) * 1990-05-16 1991-12-20 후루하시 켄지 액정표시소자의 점결함의 흑색결함화법 및 액정표시소자
JPH04261521A (ja) * 1991-01-21 1992-09-17 Mitsubishi Electric Corp 液晶表示装置及びその表示欠陥修復方法
JPH05203988A (ja) * 1992-01-29 1993-08-13 Sharp Corp アクテイブマトリックス駆動方式散乱型液晶表示装置の製造方法

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TW300341B (enExample) 1997-03-11
CN1142057A (zh) 1997-02-05
KR960042181A (ko) 1996-12-21
CN1105324C (zh) 2003-04-09

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