TW576873B - Method of growing a thin film onto a substrate - Google Patents

Method of growing a thin film onto a substrate Download PDF

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Publication number
TW576873B
TW576873B TW089107027A TW89107027A TW576873B TW 576873 B TW576873 B TW 576873B TW 089107027 A TW089107027 A TW 089107027A TW 89107027 A TW89107027 A TW 89107027A TW 576873 B TW576873 B TW 576873B
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Taiwan
Prior art keywords
conduit
gas
reaction chamber
patent application
substrate
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TW089107027A
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English (en)
Inventor
Sven Lindfors
Pekka T Soininen
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Asm Int
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrostatic Separation (AREA)

Description

經濟部智慧財產局員工消費合作社印製 576873 Α7 Β7 五、發明說明（1 ) 胬日景 潑明領域 捣孿明與製造薄膜有關。特別是，本發明與在基底上 隹慝P膜的方法有關，在該方法中，將基底放置在反應室 內，與複數個氣相作用物表面反應，按照A L C V D法形 成薄膜。 相關技術描述 習用上，生長薄膜是使用真空蒸鍍沈積、分子束磊晶 (Μ B E )及其它類似的真空沈積技術，各種化學氣相沈 積（C V D )(包括低壓及金屬有機物C V D及電漿強化 C V D )或使用上述的沈積法進行交替的表面反應，習知 技術如原子層化學氣相沈積，下文中簡爲A L C V D，先 前也稱其爲原子層磊晶或” ALE” 。在MBE及CVD 法中，除了其它變數，薄膜生長率受開始材料流入之濃度 的影響。使用這些方法製造薄膜爲獲得均勻平滑的表面， 在基底一側之開始材料的濃度與反應必須保持相等。如果 允許不同的開始材料在到達基底表面前相互混合，如 C V D法的情況，隨時都可能發生試劑間的相互反應。如 此’會發生氣體作用物在饋送管線內形成微顆粒的危險。 此些微顆粒通常會使沈積之薄膜的品質劣化。不過，反應 過早的情形在Μ B E及C V D反應室內可以避免，例如在 作用物未到達基底前不要及早將作用物加熱。除了加熱， 所要的反應可借助例如電漿或其它類似的活化裝置引發。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 1 ϋ ϋ ϋ ϋ ϋ ϋ ammt I JrJ ϋ ϋ .1 I 、： tli« (請先閱讀背面之注意事項再填寫本頁) -4 - 576873 A7
經濟部智慧財產局員工消費合作社印製 五、發明說明（2 ) 在MB E及CVD法中，薄膜的生長速率主要是經由 控制k擊到基底上之開始材料的流入速率來調整。反之， A L C V D法中薄膜生長的速率則是經由基底的表面特性 控制’而非經由流入之開始材料的濃度或宜它性晳。在 A L C VD法中，在基底上生長膜的唯一的首要之務是玉 供足夠濃度的開始材料。 例如在FI專利Nos · 52，359及 57 ’ 975以及美國專利4，058，430及 4，389，9 73中所描述的入1^(：¥0法。在？1專 利 N〇s .97，730、97，731 及 1 0 0 ’ 4 0 9中也揭示一些適合實施此方法的裝置結構 。在 Material Science Report 4(7) ，1980，Ρ· 2 6 1，以及 Tyhji0tekniikka (英文爲 Vacuum Techniques )ISBN 951 - 794- 422 - 5，pp· 2 5 3 - 2 6 1中對沈積薄膜的設備有進一步的描述。 在A L C V D法中，原子或分子掠過基底，連續地衝 擊它的表面，因此在其上形成一完全浸透的分子層。 從習知技術如F I專利說明書N 〇 · 5 7，9 7 5可 知’在浸透步驟之後是保護氣體脈衝以形成~*擴散障層， 它掃除過量的開始材料，且氣體反應產生物來自基底。接 續的作用物脈衝間的交雜必須避免。不同開始材料的接續 脈衝以及保護氣體脈衝形成擴散障層’它將接續之開始材 料脈衝相互隔開，經由不同材料的表面化學特性控制薄膜 的生長速率。 --------訂---------^9.^. (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -5- 經濟部智慧財產局員工消費合作社印製 576873 A7 ________ B7 五、發明說明（3 ) 氣體作用物的脈衝及沖洗氣體是由閥控制。 A L C V D法的基本特徵是應避免作用物在反應室附 近凝結。特別是凝結在作用物源及反應室間之導管上的作 用物，及反應室內之基底上的作用物，將嚴重影響薄膜的 品質。在作用物輸送管線內凝結或昇華的顆粒或小滴會散 布到作用物流中，並導致薄膜不均質。在反應室內之薄膜 上也同樣會凝結固態顆粒或液態小滴。因此，A L C V D 法的操作方式是連接作用物源與反應室出口之設備熱 區內的溫度，不得低於作用物的凝結溫度。 A L C V D法的溫度是由所使用的作用物及施加的壓 力決定。一般來說，在作用物的氣化溫度與分解溫度之間 。溫度通常大約在2 5到5 0 0 °C之間。現有另一趨勢是 朝向使用揮發性低的作用物，如固體或高沸點的前質。此 等作用物源較容易處理。不過，適用的溫度範圍也高於這 些氣體及液體作用物。通常，使用固態源的溫度範圍在 2 5 0到5 0 0 °C之間，典型的溫度範圍爲3 0 0到 4 5 0 t。壓力範圍典型上大約1到1 0 〇毫巴，以低於 5 0毫巴爲佳。 當使用固態的作用物源時，必須使用載氣將作用物的 蒸氣送入反應室，因爲源的蒸氣壓並不足以產生從源到反 應室之夠強的氣相作用物脈衝流。由於很多固態源是粉末 ，內含有極細的分離物質（灰塵），當載氣氣流通過作用 物材料時，氣相的作用物脈衝有被微小固態顆粒污染的危 險。這些顆粒會干擾薄膜的生長。具有高沸點的液態作用 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂--------- 3Φ (請先閱讀背面之注意事項再填寫本頁) -6 - 576873 A7 ___ B7 五、發明說明（4 ) 物也遭遇相同的問題，載氣流會與極細的分離小滴產生霧 ’散布在載氣流中。因此，在脈衝進入反應室前，必須先 將氣相的作用物脈衝導入過濾器，以靜態的過濾器爲佳， 以去除任何存在於氣流中的液體或小滴或固態顆粒。此些 過濾器包括習用的濾淸器，氣流流過具有巨大分子孔的多 孔材料層。 因此’ AL CVD的基本要求即是要在高於所使用之 作用物的凝結點的溫度操作，以免產生可能干擾薄膜均勻 生長的顆粒或小滴，連同使用具有高沸點或昇華點的作用 物’將使得對A L C V D設備的要求愈來愈嚴苛。設備的 設計必須能在高溫（典型的溫度範圍在2 5 0到5 0 0 t 之間）與低壓下可靠地操作。不僅是用於、、熱區〃的設備 要忍受此等高溫，且設備的材料在該高溫下不能與氣化的 作用物產生反應。習用於作用物脈衝及沖洗氣體的機械閥 ，以及用於該閥及配件的氣密襯墊或迫緊，更是特別要求 這些條件。用於氣密襯墊或迫緊的聚合物材料會產生其它 的塵埃問題，導致氣相作用物脈衝的污染。基於數項理由 ，在設計使用固態及/或液態源的A L C V D設備中，需 要結合過濾器。 發明槪述 本發明的目的是提供一種用於按照A L C V D法在反 應室中之基底上生長薄膜的創新方法。特別是，本發明的 目的是提供一種方法，其中’ A L C V D法可以使用固態 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------S (請先閱讀背面之注意事項再填寫本頁) 訂---------^φ#· 經濟部智慧財產局員工消費合作社印製 576873 A7 B7 五、發明說明（7 ) 經濟部智慧財產局員工消費合作社印製 元件表 1 作用物源 2 作用物源 3 預-反應空間 4 反應室 5 排氣管 2 1 限流器 6 真空幫浦 7 閥 8 閥 9 導管 10 導管 11 導管 12 導管 13 饋送管線 14 饋送管線 15 旁通導管 16 旁通導管 17 閥 18 閥 19 限流器 2 0 限流器 --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -10- 576873 經濟部智慧財產局員工消費合作社印製 A7 ___B7 ___ 五、發明說明（9 ) 體，如氬氣。 、、反應室的沖洗〃表示在作用物的氣相脈衝期間，送 入反應室的鈍氣。進行沖洗是爲了降低在引入下一次脈衝 之前，俞一氣相脈衝的殘餘濃度。 在本文中所使用的、、作用物〃一詞’指的是可被氣化 的材料，且可與基底表面產生長反應。在A L E法中，習 用上使用屬於兩不同族的作用物。作用物可以是固態、液 態或氣體。、、金屬作用物〃是使用金屬化合物，或是金屬 元素。適用的金屬作用物是金屬的鹵素化合物，包括氯化 物及溴化物，及有機金屬化合物，諸如t h d複合化合物 。其它金屬作用物的例子還包括Zn、ZnC 12、 TiCl4、Ca (thd)2、 （CH3)3A1 、以及 C p 2 M g。、'非金屬作用物〃是能與金屬化合物反應的化 合物或元素。後者適合的代表物包括水、硫、硫化氫、氨 等。''前質〃是 ''作用物〃的同義字。 本發明特別適合使用在ί哀境溫度及壓力下爲液態或固 態的前質。 a作用物源〃指的是一容器，它能容納作用物材料， 且作用物能在其中氣化。它配置有一入口嘴及一出口嘴， 它與連接源及反應室的導管連接。作用物源可以配置各自 的加熱裝置。另者，也可使用熱的載氣送入容器。入口嘴 通常連接到一氣流閥，用以調整進入作用物源的載氣氣流 。出口嘴通常不連接閥，與第一導管自由連通。 ''第一導管〃是由金屬或玻璃製成的管子，.用於連接 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I------------------訂 —-------I (請先閱讀背面之注意事項再填寫本頁) -12- 經濟部智慧財產局員工消費合作社印製 576873 A7 B7 五、發明說明（11 ) 由第三導管被排放。由於來自作用物源之作用物脈衝期間 ，第三導管沒有被閥關閉，因此，在作用物的脈衝期間， 還是有小量的前質從源流到第三導管。 經由第三導管被抽走的作用物殘餘蒸氣可以再利用。 不過，最好是將其丟棄。根據實施例，第三導管是連接到 一保持在較低壓力及/或較低溫度的凝結容器，以提供被 氣化之殘餘作用物的凝結。 通過第三導管的鈍氣氣流通常少於流過第一導管進入 反應室之氣流的1 0 %，以少於5 %爲佳。爲使脈衝期間 從第三導管損失的作用物最少，可在第三導管上連接第四 導管。第四導管是用來將鈍氣以與第三導管從第一導管排 放氣流相反的方向饋入第三導管。因此，從第四導管饋入 的鈍氣將作用物蒸氣 > 推回〃第一導管。 關於可以實施本發明的某特定A L C V D實施例，在 吾人共同待審的專利申請案中有更詳細的描述。該實施例 的基本構想是將先前的氣相脈衝殘餘部分經過化學反應， 以將該殘餘部分轉換成反應產物，它不會干擾到置於反應 室內之基底上之薄膜的AL CVD生長。產生固態的生成 物。該生成物可以從反應器設備中單獨地取走。最好是犧 牲部分後續氣相脈衝作用物的分子，並用來化學地耗盡前 一氣相脈衝的殘餘濃度。因此，按照該實施例，後續的氣 相脈衝與先前氣相脈衝的殘餘部分接觸，以便在將後續的 氣相脈衝饋入反應室之前，先形成後續氣相脈衝之作用物 與先前氣相脈衝之作用物的作用物反應生成物，· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)
-14- 576873 A7 _B7_ 五、發明說明（14 ) 上。不過，反應的產物也會成形在預-反應空間所定義之 裝置的內壁上，可藉淸洗內壁將其移除。 經濟部智慧財產局員工消費合作社印製 n Γ : 99tl__ (請先閱讀背面之注意事項再填寫本頁) -17- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）

Claims (1)

  1. A8 B8 C8 D8
    576873 厂 充T亨齋豕利範圍 1穿严寻為»/ 附件2A:第89107027號專利申請案 中文申請專利範圍修正本 (請先閲讀背面之注意事項再填寫本頁) 民國91年5月修正 1 · 一種按.ALCVD法在放置於反應室中之基底上 生長薄膜的方法，該方法的步驟包括： - 從保持在氣化溫度的作用物源中氣化作用物； - 將氣化的作用物經由第一導管導引導到反應室； - 將該作用物以氣相脈衝的形式與至少另一作用物 的氣相脈衝重複及交替地饋入反應室； - 在將作用物饋入反應室前，先使氣化的作用物通 過過濾器；以及 - 致使該氣相作用物在反應溫度與基底的表面反應 ，以在該基底上形成薄膜； 其特徵爲： - 加熱該液態或固態作用物至2 5至5 0 0 t之溫 度範圍； 經濟部智慧財產局員工消費合作社印製 - 第二導管在連接點連接到第一導管，經由第二導 管將鈍氣饋入該第一導管，以便在兩作用物氣相 脈衝間的時間區間構成氣障，以防止氣化的作用 物氣流從作用物源經由第一導管進入反應室；以 及 - 經由連接到第一導管的第三導管以排放該第一導 管中的鈍氣，該第三導管保持在等於或高於氣相 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 576873 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8六、申請專利範圍 作用物的凝結溫度，第三導管與第一導管的連接 點在第二導管的上游。 2 ·如申請專利範圍第1項的方法，其中，經由第二 導管饋入的鈍氣，在第一導管至少某一段長度中的方向與 作用物流的方向相反。 3 ·如申請專利範圍第1項的方法，其中的第二導管 保持在等於或低於反應溫度。 4 ·如申請專利範圍第1的方法，其中第二導管包括 一開放的氣流通道。 5 ·如申請專利範圍第1的方法，其中鈍氣饋入第一 導管的點是在第二導管與第一導管連接之1點的下游，以在 第一導管中提供一方向與作用物流方向相反的鈍氣氣流。 6 ·如申請專利範圍第1的方法，其中的過濾器是靜 態的過濾器，如濾淸器或陶瓷的分子濾網，它能分離散布 於作用物氣流中之液態或固態的小滴或顆粒或最小分子大 小的分子。 7 ·如申請專利範圍第1的方法，其中的第一導管連 接作用物源與反應室，且在第一導管中沿著作用物氣流路 徑配置的過濾器將懸浮於氣化之固態或液態作用物中的液 態或固態顆粒濾除。 8 ·如申請專利範圍第7項的方法，其中該第二導管 連接到第一導管的點是在過濾器與反應室之間。 9 ·如申請專利範圍第8項的方法，其中流過過濾器 的氣流是單向氣流。 本紙張尺度適用中國國家榡準（CNS ) A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁) -2 - 576873 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 ____ D8 _六、申請專利範圍 1 0 ·如申請專利範圍第8項的方法，其中氣障是形 成在過濾器與反應室之間。 1 1 ·如申請專利範圍第7項的方法，其中第二導管 連接到第一導管的點是在作用物源與過濾器之間。 1 2 ·如申請專利範圍第1 1項的方法，其中第三導 管連接到第一導管的點是在第一導管與第二導管的連接點 與作用物源之間。 1 3 .如申請專利範圍第1項的方法，其中作用物源 與第一導管自由連通。 1 4 _如申請專利範圍第1項的方法，其中未反應的 氣相作用物經由排放導管從反應室中排放，以及，第三導 管連接到該排放導管。 1 5 _如申請專利範圍第1項的方法，其中第三導管 連接到獨立时真空裝置。 1 6 ·如申請專利範圍第1項的方法，其中的鈍氣做 爲氣化之固態或液態作用物的載氣。 1 7 .如申請專利範圍第1 6項的方法，基本上，所 有來自作用物源的任何氣相作用物，都在兩氣相作用物脈 衝饋入反應室之間，經由第三導管排放。 1 8 ·如申請專利範圍第1項的方法，其中第三導管 連接到保持在低壓及/或低溫的凝結容器，以提供殘餘之 氣化作用物的凝結。 1 9 .如申請專利範圍第1項的方法，其中第三導管 連接有第四導管，用以將鈍氣饋入第三導管。 本紙康尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)
    -3- 576873 A8 B8 C8 D8 六、申請專利範圍 2 〇 .如申請專利範圍第1至1 9項之任一項的方法 ，其中鈍氣是在該作用物的氣相脈衝之間被饋入反應室。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -4 -
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