TW561177B - Epoxy resin compositions and premolded semiconductor packages - Google Patents
Epoxy resin compositions and premolded semiconductor packages Download PDFInfo
- Publication number
- TW561177B TW561177B TW89125643A TW89125643A TW561177B TW 561177 B TW561177 B TW 561177B TW 89125643 A TW89125643 A TW 89125643A TW 89125643 A TW89125643 A TW 89125643A TW 561177 B TW561177 B TW 561177B
- Authority
- TW
- Taiwan
- Prior art keywords
- epoxy resin
- weight
- porous silica
- curing agent
- epoxy
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 96
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 96
- 239000000203 mixture Substances 0.000 title claims abstract description 66
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 155
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 70
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 42
- 239000002245 particle Substances 0.000 claims abstract description 22
- 230000005484 gravity Effects 0.000 claims abstract description 18
- 239000011256 inorganic filler Substances 0.000 claims abstract description 15
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 15
- 238000011049 filling Methods 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000011347 resin Substances 0.000 claims description 20
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 239000004593 Epoxy Substances 0.000 claims description 10
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 6
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 5
- 125000003700 epoxy group Chemical group 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 2
- 230000002079 cooperative effect Effects 0.000 claims 2
- 150000002632 lipids Chemical class 0.000 claims 1
- 230000035699 permeability Effects 0.000 abstract description 9
- 239000000945 filler Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 25
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 14
- 239000002274 desiccant Substances 0.000 description 9
- 239000012798 spherical particle Substances 0.000 description 8
- 239000007822 coupling agent Substances 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 6
- 239000000499 gel Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000004922 lacquer Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 6
- 229930185605 Bisphenol Natural products 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- -1 laminates Substances 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 229910021536 Zeolite Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 239000004575 stone Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000010457 zeolite Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 210000002784 stomach Anatomy 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- XKZQKPRCPNGNFR-UHFFFAOYSA-N 2-(3-hydroxyphenyl)phenol Chemical group OC1=CC=CC(C=2C(=CC=CC=2)O)=C1 XKZQKPRCPNGNFR-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- 235000010893 Bischofia javanica Nutrition 0.000 description 1
- 240000005220 Bischofia javanica Species 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229940106691 bisphenol a Drugs 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- BVURNMLGDQYNAF-UHFFFAOYSA-N dimethyl(1-phenylethyl)amine Chemical compound CN(C)C(C)C1=CC=CC=C1 BVURNMLGDQYNAF-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000000855 fermentation Methods 0.000 description 1
- 230000004151 fermentation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- VMGAPWLDMVPYIA-HIDZBRGKSA-N n'-amino-n-iminomethanimidamide Chemical compound N\N=C\N=N VMGAPWLDMVPYIA-HIDZBRGKSA-N 0.000 description 1
- RCHKEJKUUXXBSM-UHFFFAOYSA-N n-benzyl-2-(3-formylindol-1-yl)acetamide Chemical compound C12=CC=CC=C2C(C=O)=CN1CC(=O)NCC1=CC=CC=C1 RCHKEJKUUXXBSM-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- BOLDJAUMGUJJKM-LSDHHAIUSA-N renifolin D Natural products CC(=C)[C@@H]1Cc2c(O)c(O)ccc2[C@H]1CC(=O)c3ccc(O)cc3O BOLDJAUMGUJJKM-LSDHHAIUSA-N 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-VIFPVBQESA-N trimethoxy-[3-[[(2r)-oxiran-2-yl]methoxy]propyl]silane Chemical compound CO[Si](OC)(OC)CCCOC[C@H]1CO1 BPSIOYPQMFLKFR-VIFPVBQESA-N 0.000 description 1
- AUOZNINQGUNWOV-UHFFFAOYSA-N triphenyl borate;triphenylphosphane Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C=1C=CC=CC=1OB(OC=1C=CC=CC=1)OC1=CC=CC=C1 AUOZNINQGUNWOV-UHFFFAOYSA-N 0.000 description 1
- IUURMAINMLIZMX-UHFFFAOYSA-N tris(2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P(C=1C(=CC=CC=1)CCCCCCCCC)C1=CC=CC=C1CCCCCCCCC IUURMAINMLIZMX-UHFFFAOYSA-N 0.000 description 1
- WXAZIUYTQHYBFW-UHFFFAOYSA-N tris(4-methylphenyl)phosphane Chemical compound C1=CC(C)=CC=C1P(C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 WXAZIUYTQHYBFW-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000004078 waterproofing Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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Description
經濟部智慧財產局員工消費合作社印製 561177 A7 ------__ 五、發明說明(]) •本發明係關於容易模製、滲潮性低且於固化態具可信 度的環氧樹脂組成物,其適用以包封半導體晶片.,特別是 作爲事先模製的中空半導體封裝。本發明亦係關於以固化 態的環氧樹脂組成物包封之預先模製的中空半導體封裝。 發明背景 電力和電子範圍中,環氧樹脂之特徵在於機械強度、 耐濕性和可模製性,其在許多應用中作爲絕緣材料、層合 物、黏合劑和半導體包封劑。 相對於基本上不透水的金屬和陶瓷,環氧樹脂被歸類 爲水氣可擴散通過的熱固性樹脂。暴於濕氣環境之後,環 氧樹脂吸收水氣並使得水氣穿透。在熱塑性樹脂用於須密 封和防水密封(如:精密機械(如:手錶和電子計算機) 和電子零件(如:半導體封裝))時,特別是用於固態影 像裝置(通常稱爲C C D )中空封裝和石英振盪中空封裝 時,其滲潮性通常會成爲一個問題。例如,C C D的樹脂 封裝長時間暴於濕熱環境中時,雖未與水直接接觸,也會 緩慢地吸收水氣。水氣引至由飽和水蒸氣壓測知飽和蒸氣 量過量的密封空間中時,水氣會凝結。此裝置會因爲露水 凝結而無法操作。 以前關於包含環氧樹脂、固化劑和無機塡料之用於中 空封裝的環氧樹脂組成物的技術中,一直希望能夠改善滲 潮性。一個已知的方式是在環氧樹脂組成物中添加無機乾 燥劑,使得乾燥劑吸收穿透固化物項的水氣’防止水氣進 -----ί — l· ——-------Ί 訂---------線· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) -4- 561177 A7 _____ B7 五、發明說明(2) 入中空內部。 與本發明同一委託人的j P — A 8 - 1 5 7 6 9 4 揭示一種環氧樹脂組成物,包含至少1 〇重量份無機乾燥 劑/ 1 0 0重量份環氧樹脂和固化劑。特定言之,使用A MT砂石(Mizusawa Chemical K.K.)作爲無機乾燥劑,此 組成物的滲潮性低。 但A Μ T矽石因爲是藉由燒結沸石而得的多孔石時, 所以真實比重低且含有相當大量的離子雜質。真實比重低 意謂添加某些量的矽石所佔體積較大,增加矽石量會阻礙 流動。大量離子性雜質干擾固化觸媒的固化功能,使得固 化程度變得不足,使得熱強度和結合強度下降。 J P 2,75〇,254(JPA 6 — 232292)提出一種半導體封包,包含含〇 · 經濟部智慧財4局員x-消費合泎达印奴 (請先閱讀背面之注意事項再填寫本頁) ,線一 5 5 0重量%乾燥劑的絕緣底質。因爲少量乾燥劑無法完 全吸附穿透固化物件的水氣,所以,以提高添加至環氧樹 脂組成物中的乾燥劑量爲佳。例如,在水氣穿透信賴性試 驗中’含少量乾燥劑的封包樣品使得水氣到達孔隙,使得 水氣凝結在玻璃蓋上。提高乾燥劑量可以消除此缺點。但 是’因爲傳統乾燥劑與環氧樹脂和固化劑的配伍性欠佳, 大量添加時,它們會使得流動情況更爲惡化。使用轉模機 器模製時,流動緩慢的環氧樹脂組成物會造成這些缺陷, 因此不適用於半導體包封目的。 本發明的一個目的是要提出一種環氧樹脂組成物,其 可流動且容易模製及固化成滲潮性低的產物,及以固化態 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -5- 561177 經濟部智慧財產局員工消費合作社印製 Α7 Β7 五、發明說明(3) 的環氧樹脂組成物密封之預先模製的中空半導體封裝 發明槪述 吾等發現:塡料是比表面積6至2 0 0平方米/克、 真實比重2 · 0至2 . 2且平均顆粒尺寸2至5 0微米的 多孔矽石時,包含環氧樹脂、固化劑和無機塡料的環氧樹 脂組成物流動順暢且容易模製。此組成物固化成滲潮性低 的產物。槪言之,組成物流動平順且容易結合和固化成滲 潮性儘量低的產物。此組成物因此適用以形成預先模製的 中空半導體封包。 根據本發明,提出一種環氧樹脂組成物,包含環氧樹 脂、固化劑和無機塡料,此塡料爲多孔矽石形式,其比表 面積6至200平方米/克,真實比重2·0至2·2且 平均顆粒尺寸2至5 0微米。一些較佳實施例中,多孔矽 石製自:藉溶膠法形成重均顆粒尺寸不超過5 0微米的矽 膠,使矽膠於7 0 〇至1 2 0 0 t鍛燒;維持於2 5 °C、 7 〇 % R Η 2 4小時的情況下,此多孔矽石的吸濕度至 少0 · 3重量% ;此多孔矽石的鹼和鹼土金屬含量各不超 過1 p p m。此多孔矽石以佔環氧樹脂組成物總重的4〇 节9 0重量%爲佳,至少5 5重量%更佳。 本發明亦提出以包含環氧樹脂、固化劑和無機塡料的 環氧樹脂組成物之固化產物密封之預先模製的中空半導體 Μ包’其中,無機塡料包括比表面積6至2 〇 〇平方米/ 化、真實比重2 · 0至2 · 2且平均顆粒尺寸2至50微 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----^——l·——·衣-------1^1--------線· (請先閱讀背面之注意事項再填寫本頁) -6 -
經濟部智慧財產局員X-消费合作社印S 561177 Λ7 __B7____ 五、發明說明(4) 米的·多孔矽石。 附圖簡述 唯一的附圖(附圖1 )是在實例中模製之預先模製的 中空半導體封包之截面圖。 主要元 件對 昭 j \\\ 表 1 封 裝 物 2 引 線 框 3 環 氧 樹 脂 黏 著 劑 4 透 明 玻 璃 屏 障 物 5 半 導 體 晶 片 6 金 屬 結 合金 屬 絲 2 a 內 部 引 線 2 b 外 部 引 線 較佳實施例之描沭 根據本發明之環氧樹脂組成物包含環氧樹脂、固化劑 和無機塡料。此處所用的環氧樹脂不受限於分子結構和分 子量,只要其分子中有至少兩個環氧基且可以下文中所描 述的固化劑固化即可。可以自傳統習知環氧樹脂中作適當 選擇。可資利用的環氧樹脂的例子包括雙酚型環氧樹脂( 如:雙酚A型環氧樹脂和雙酚F型環氧樹脂)、淸漆型環 氧樹脂(如:g)}淸漆型環氧樹脂和甲酣淸漆型環氧樹脂) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------l·.----------,—訂--------線Φ (請先閱讀背面之注意事項再填寫本頁) 561177 Λ7 _B7__ 五、發明說明(5) 、三酚烷型環氧樹脂(如:三酚甲烷型環氧樹脂和三酚丙 烷型環氧樹脂和它們的聚合物)、有二酚骨架的環氧樹脂 、有萘骨架的環氧樹脂、二環戊二烯-酚淸漆樹脂、酚芳 烷基型環氧樹脂、縮水甘油酯型環氧樹脂、脂環族環氧樹 脂、雜環族環氧樹脂和鹵化的環氧樹脂。數個較佳的環氧 樹脂列於下面的式中,但環氧樹脂不在此限。 ---------.----9-------.丨訂----------線0 (請先閱讀背面之注意事項再填寫本頁) 經濟邨智慧財產局員X.消費合作fi印沒 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -8- 561177 Λ7 B7 五、發明說明(6)
-----*---^-----------*1 訂----------線 (請先閲讀背面之注意事項再填寫本頁) 經濟部晳毯財產局員工消费合作汰印製 是甲基,η是0至1 此處,G是縮水甘油基,μ 的整數,以0至5爲佳。 對固化劑沒有嚴格的要求,可以是常用於傳統環氧樹 脂之固化的酚系化合物、胺化合物和酸酐化合物中任何者 。其中,以每個分子有至少兩個酚系羥基的酚醛樹脂爲佳 。固化劑的例子包括雙酚型樹脂(如:雙酚Α型樹脂和雙 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -9 -
561177 Λ7 B7 五、發明說明(7) 酚F.型樹p );淸漆型醒樹脂(如:酌醒淸漆樹脂和甲 酚醛淸漆樹脂);三®分丨完樹脂(如:三酣甲院樹脂和三酚 丙烷樹脂):可熔酚酸樹脂型酣酵樹脂、酸芳院基樹脂、 雙酚型酚醛樹脂、萘型酸酸樹脂和環戊二烯型酸醒樹脂。 這些固化劑可以單獨使用或二或多者倂用。固化劑的數個 較佳的非限制例如下。 ---------_-----------1 訂 ----------線 (請先閱讀背面之注意事項再填寫本頁) 經濟邪智慧財4局員X-消費合阼fi-印沒
0H
OH ch2-\
OHA.
OH CH〇
0H
本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -10- 561177
經濟邡智慧財產局8x.4f合泎fi印製 五、發明說明(8) 此處/ m是〇至1 〇的整數,以q至5爲佳。 固化劑以有效量摻雜以使得環氧樹脂固化。以酚醛樹 脂作爲固化劑時’在環氧樹脂中的摻雜量以〇 · 5至 1 · 6莫耳酚系羥基/莫耳環氧基爲佳,〇 . 6至1 · 4 莫耳酸系羥基/莫耳環氧基更佳。低於〇 · 5莫耳可能會 使得較多的環氧基單獨聚合(均聚反應),降低玻璃化轉 變溫度。超過1 · 6莫耳意謂酚系羥基過量(其會降低反 應性),導致交聯密度較低及強度不足。 此處作爲無機塡料的多孔矽石之比表面積是6至 2 0 0平方米/克,此以藉氮吸附法測得的b e τ比表面 積表示,真實比重是2 · 〇至2 . 2 ,平均顆粒尺寸是2 至5 0微米。此處所謂的平均顆粒尺寸可以是,如,穎粒 尺寸分佈的重量平均(或中央直徑),其藉雷射光繞射法 測得。 更特定言之,此多孔矽石的比表面積是6至2 0 0平 方米/克’以2 0至1 5 0平方米/克爲佳。比表面積低 於6平方米/克的矽石的吸水能力欠佳,而比表面積超過 2〇0平方米/克者不利於流動。此多孔矽石的真實比重 是2 · 0至2 . 2。真實比重低於2 · 0的矽石的燒結程 度不足比環氧樹脂不易被潤濕。真實比重超過2 · 2者 爲混合的晶狀矽石,其不屬非晶狀的多孔矽石範圍內。此 外,多孔矽石的且平均顆粒尺寸是2至5 0微米,以4至 2〇微米爲佳。此範圍之外,會衍生出一些問題,包括流 動阻礙和形成毛刺。 -----*-----------、訂----------線· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -11 - 561177 經濟部智慧財產局員工消費合作fi印贤 Α7 Β7 五、發明說明(9) -多孔ί夕石中,鹼金屬(如:N a和K )和鹼土金屬(, 如:M g和C a )含量各以1 p p m或以下爲佳·。最佳情 況中,鹼和鹼土金屬總含量是1 p p m或以下。這樣的離 子性雜質含量較高時,會降低固化觸媒的活性,使得固化 不足。加有大量多孔矽石的組成物中,離子性雜質含量高 時,此趨勢顯著。 另一較佳情況中,維持於2 5 °C、R Η 7 0 % 2 4 小時,多孔矽石本身的吸水能力相當於吸濕力至少〇 . 3 %,以至少0 · 4 %爲佳,至少1 · 0重量%最佳。多孔 矽石的吸濕力低於0 · 3重量%時,組成物的吸水力會不 足。 進一步的較佳情況中,多孔矽石的孔隙體積是 〇· 05至10毫升/克,以0 · 1至1 · 〇毫升/克爲 佳,孔隙直徑是3至1 0 0埃。 一個較佳實施例中,多孔矽石製自:藉溶膠法製得重 均顆粒尺寸不超過5 0微米的矽膠顆粒,及於7 0 0至 1 2 0 0 °C鍛燒。此處所用溶膠法可以是述於J P - B 7 — 98659、JP — A 62 — 283809 和 JP 一 A 62 — 3 0 11 (皆與 USP4,683 , 128 有關)中所述的任何方法。視其製法而定,此多孔矽石爲 球形顆粒或裂片。例如,藉由在有界面活性劑存在時,強 ίϊ攪拌驗金屬砂酸鹽水性乳液,之後以水淸洗,乾燥,和 燒結,製得球形多孔矽石。碎裂的多孔矽石得自:將鹼金 屬矽酸鹽水性乳液經由孔壓至與水互溶的有機溶劑或酸溶 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ------—^--------1^-:-------- (請先閱讀背面之注意事項再填寫本頁) -12- 561177 Α7 Β7 五、發明說明(1〇) 液中’以弊性i谷液處理所得纖維凝塊,以水淸洗以萃除雜 質,之後粉碎及燒結。 . 藉凝膠法得到多孔矽石的較佳條件包括約7 〇 〇至 1 2 0 0 °C燃燒’於約8 0 〇至1 1 〇 〇 °C燃燒更佳,燃 燒時間約2至1 6小時,以約4至1 2小時爲佳。燃燒溫 度低於7 0 0 °C或者燃燒時間過短,矽石的燒結程度不及 環氧樹脂和固化劑的潤濕度,無法使得流動順暢。燃燒時 間超過1 2 0 0 C或者燃燒時間過長,砍石表面上的孔隙 數會因爲過度燒結而降低,使得矽石的吸水能力低。 如前述者,此處所用多孔矽石爲球狀顆粒或碎片形式 。顧及組成物流動性時,以球形顆粒爲佳。顧及組成物於 固化態的機械強度時’以砂石碎片爲佳。多孔砂石中,球 形顆粒的吸水性優於碎片,以添加較多的球形顆粒以提高 吸水力爲佳。吸水力的高低與孔隙尺寸有關。雖然就流動 性和強度的良好均衡而言,碎片/球形顆粒的重量比以在 〇/ 1 0至3 / 7的範圍內爲佳,但未嚴格要求球形顆粒 和碎片的比例。特別地,添加大量多孔矽石時,建議提高 球形顆粒的比例。 以環氧樹脂組成物總重計,添加的多孔矽石量以4〇 ΐ 9〇%爲佳,5〇至9〇%較佳,5 5至8〇重量%最 佳。多孔矽石添加量低於4 0重量%時,組成物捕捉外部 滲入的水的能力有時欠佳,無法達到所欲低滲潮性。多孔 矽石添加量超過9 0重量%,此組成物變得不易流動且難 以模製。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------^------------1 ^ --------- (請先閱讀背面之注意事項再填寫本頁) -13- 經濟邹智慧財i局員X.消費合作fi印沒 561177 A7 __B7_ 五、發明說明(j〇 ®本;卜.使用多孔矽石作爲無機塡料,本發明之環氧樹 脂組成物中可以摻有其他無機塡料。這些其他的無機塡料 t!l括·熔融矽石(如在球磨機中硏磨者)、藉火燄熔解得到 的球形砂石、晶狀矽石、發煙矽石、沉澱矽石,氮化矽, =¾彳匕鎂和矽酸鎂。較佳情況中,所存在的其他無機塡料 用量使得無機塡料總量(包括本發明的多孔矽石)是 100至1 ’000重量份/100重量份環氧樹脂和固 ί匕劑總重。總量低於1 0 0份時,組成物的膨脹係數較高 °總量超過1 ,〇 〇 0份時,組成物變得過於黏稠而不易 模製。總量爲2 0 〇至9 0 0重量份更佳。 用以增進無機塡料與樹脂之間的黏合強度,無機塡料 以事先經偶合劑(如:矽烷和鈦酸鹽偶合劑)作過表面處 理爲佳。較佳偶合劑是矽烷偶合劑,其爲烷基經官能基( 如:環氧基、胺基和酼基)取代的烷氧基矽烷形式,包括 環氧基矽烷(如:r -縮水甘油氧基丙基三甲氧基矽烷、 r 一縮水甘油氧基丙基甲基二乙氧基矽烷和0 一( 3 ,4 -環氧基環己基)乙基三甲氧基矽烷、胺基矽烷(如:N 一 /3 —(胺基乙基)一 τ 一胺基丙基三甲氧基矽烷、 胺基丙基三乙氧基矽烷和N -苯基- r -胺基丙基三甲氧 基矽烷)和锍基矽烷(如:r -锍基矽烷)。對於表面處 埋的偶合劑用量或表面處理方法沒有特別的限制。 本發明之組成物中,傳統已知矽酮橡膠和凝膠爲粉末 狀’經矽酮修飾的環氧樹脂、經矽酮修飾的酚醛樹脂和熱 塑性樹脂(如:異丁烯酸甲酯-丁二烯-苯乙烯共聚物) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------------------•—訂----------線 (請先閱讀背面之注意事項再填寫本頁) -14 - 561177 經濟部智慧財產局員工消費合作fi印奴 A7 B7 五、發明說明(12) 可以、添加伊爲疏緩張力劑和黏合劑。 實施本發明時,以使用加速固化劑來促進環氧樹脂和 固化劑之間的固化反應爲佳。此固化加速劑可以是任何能 夠促進反應的適當物質。例如,加速固化劑的非限制例包 括有機膦化合物,如:三苯基膦、三丁基膦、三(對-甲 基苯基)膦、三(壬基苯基)膦、三苯基膦三苯基硼酸鹽 和四苯基膦四苯基硼酸鹽;三級胺化合物,如:三乙胺、 苯甲基二甲基胺、α —甲基苯甲基二甲基胺和1 ,8 —二 氮雜二環〔5 · 4 · 0〕—十一烯—7 ;及咪唑化合物, 如:2 —甲基咪唑、2 —苯基咪唑和2 —苯基一 4 —甲基 咪唑。加速固化劑的適當量是約0 · 0 1至1 〇重量份/ 1〇0重量份環氧樹脂和固化劑(如:酚醛樹脂)總和。 有需要時,環氧樹脂組成物另可包括多種添加劑。例 子包括偶合劑,如:矽烷、鈦和鋁偶合劑;著色劑,如: 碳黑;分離劑,如:天然蠟;潤濕修飾劑,如:氟化學界 面活性劑和矽酮油;及捕集鹵素劑。 此環氧樹脂組成物可製自:使基礎和選用成份在高速 混合機或其他適當設備中均勻混合,在滾磨機或連續捏和 機中充分硏磨此混合物。所欲硏磨溫度約5 0至1 2 0 t 。硏磨之後’將混合物製成片、冷卻和硏磨。所得環氧樹 脂組成物可以作爲一般模製材料,特別是半導體封裝劑。 本發明的環氧樹脂組成物可以有用效地用於封裝多種 類型的半導體裝置,特別是用以形成預先模製的中空封裝 。最常用的封裝法是低壓轉移模製法。此環氧樹脂組成物 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------_----------->1 訂----------線^^ (請先閱讀背面之注意事項再填寫本頁) -15- 561177 經濟部智慧財產局員X-消费合作fi.印沒 Λ7 B7 五、發明說明(13) 以於約1 (5 0至1 8 0 t:模製約3 0至1 8 0秒鐘,之後 於約1 5 0至1 8 0 °C後固化約2至1 6小時爲佳.。 本發明之預先模製的中空半導體封裝中,封裝以包含 環氧樹脂、固化劑和無機塡料的環氧樹脂組成物的固化產 物密封。無機塡料包括前述比表面積6至2 〇 〇平方米/ 克 '真實比重2 · 0至2 · 2且平均顆粒尺寸2至5 0微 米的多孔矽石。固化產物或整個環氧樹脂組成物中的多孔 矽石量如前述者,以至少5 5重量%爲佳。 實例 下文提出本發明的非限制性實例作說明。所有的份數 皆以重量計。 竇例1 一 1 0和比較例1 — 4 使附表1所示的多孔矽石與附表2和3中所示成份混 合,混合物於熱的二滾筒硏磨機中均勻熔解硏磨,之後冷 卻及硏磨,製得包封半導體的環氧樹脂組成物。 以下列試驗(1 )至(9 )檢測這些環氧樹脂組成物 的各種性質。其結果亦示於附表2和3中。 (1 )螺旋形流動 在根據Ε Μ Μ I標準的模具中,使組成物於1 7 5 °C 、6 . 9牛頓/平方毫米模製1 2 0秒鐘而測定螺旋形流 動狀況。 (2 )膠凝時間 本紙張义度適用中國國家標準(CNS)A4規格(210 X 297公釐) ---------5-----------.1 訂---------線^^ (請先閱讀背面之注意事項再填寫本頁) -16- 561177 Α7 五、發明說明(14) ‘膠凝稗間是環氧樹脂組成物於1 7 5 °C的加熱板上膠 凝所須時間。 ♦ (3 )熔融黏度 熔融黏度係於1 7 5 °C、載重1 0公斤的情況下,以 曰本已知之穩定載重鑽孔型流動測試設備(K 〇 k a型流 動測試機,S h丨m a d z u M f g . K. K ·)測得。 (4 )模製硬度 根據J IS K6911 ,l〇〇xl〇><4毫米的 試驗棒於1 7 5 °C、6 · 9牛頓/平方毫米模製1 2 0秒 鐘。於仍熱時以Barcol Impressor測定硬度。 (5 )撓曲強度 根據J IS K6911 , IOOXIOX4毫米的 試驗棒於1 7 5 °C、6 · 9牛頓/平方毫米模製2〇秒 鐘並於1 8 0 t固化4小時,之後測定撓曲強度。 (6 )黏合度 組成物於Alloy 4 2框架於1 7 5 °C、6 . 9 / 平方毫米模製1 2 0秒鐘並於1 8 0 °C固化4小胃,_ί# 剪截結合強度試驗樣品。框架與樹脂之間的結合面_胃 1〇平方毫米。 (7 )吸濕度 直徑5 0毫米、厚3毫米的盤形物於1 7 5 t、 6 . 9牛頓/平方毫米模製1 2 0秒鐘並於1 8 4小時。使此盤形物維持8 5 °C、R Η 8 5 %達4 8小 時,之後測定吸水量。 -----*---^-----------•丨訂----------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格m〇 X 297公髮) -—. -17- 561177 A7 B7
經濟部智慧財產笱員X-消费合作fi-印泣 五、發明說明(15) (8_)傳熱性 直徑5 0毫米、厚3毫米的盤形物於1 7 5 °C·、 6 · 9牛頓/平方毫米模製1 2 0秒鐘並於1 8 0 t: @化
4小時。根據A S 丁 Μ Ε 1 5 3 0 ,使用A N T A 2 Ο 2 1測定傳熱性。 (9 )密封試驗 環氧樹脂組成物在引線框2 (包括內和外的引線2 a 和2b)上於1 75°C、6 · 9牛頓/平方毫米模製 1 2 0秒鐘,之後於1 8 0 t固化4小時,製得附圖i戶斤 示之中空盒形狀預先模製封裝物1。透明玻璃屏障物4以 環氧樹脂黏著劑3結合於封裝物1頂部,構成中空封裝。 半導體晶片5和金屬結合金屬絲6位於引線框2上。 以此封裝物進行熱循環試驗。試驗程序包括四個步驟 :(1 )維持於大氣壓1 2 1 °C / R Η 1 Ο Ο % / 2大 氣壓下4小時,(2 )維持於室溫(2 5 °C ) 3 Ο分鐘, (3 )使玻璃屏障與1 〇 〇 °C的加熱板接觸1 0秒鐘,及 (4 )使玻璃屏障物與室溫的鐵板接觸7秒鐘。此循環重 覆四次。觀察玻璃屏障物是否因露珠凝結而變得模糊。將 第一次循環就有露珠凝結者標示爲N G 〃,將第一、二 、二和四次循環有露珠凝結者分別標示爲、' 1 〃 、 2 〃 、、、3 和、、4 "。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁> •丨訂· -4 -18- 561177 Λ7 B7 五、發明說明(θ 附表1 實例中所用者 比較例中所用者 多孔矽石 1 2 3 4 5 AMT#2000 形狀 球形 球形 球形 球形 球形 • 燒結溫度(°c) 800 900 980 1,100 1,250 • 平均顆粒尺寸(微米) 8.7 9.6 16 31 15 2 比表面積(平方米/克) 144 75 21 35 4 125 於25 °C/RH70%/24小時的吸水量( 重量%) 15 7.4 3.4 0.48 0.2 17 萃出水的pH 4.4 4.4 4.5 4.4 4.5 5.8 真實比重(克/立方公分) 2.1 2.2 2.2 2.2 2.2 1.9 與比重2.20的熔融矽石之比重比 0.95 1.00 1.00 1.00 1.00 0.86 A1 含量(ppm) 1.0 1.2 1.0 0.9 0.9 1,100 Fe 含量(ppm) 2.1 2.0 2.3 2.0 2.3 25 鹼金屬(Na和K)總含量(ppm) <1 <1 <1 <1 <1 243 鹼土金屬(Mg和Ca)總含量(ppm) <1 <1 <1 <1 <1 364 U含量(ppb) 0.1 0.1 0.1 0.1 0.1 1.4 (請先閱讀背面之注意事項再填寫本頁) •丨訂----------線*
多孔矽石1至5分別藉溶膠法形成重均顆粒尺寸 9 . 2微米、10微米、17微米、32微米和13微米 的矽膠,之後使矽膠於指定溫度燃燒8小時而製得。A 1 、F e、N a、C a 、M g和K含量係藉I C P測得,U g張尺度適用中國國家標準(CNS)A4規格(210 X 297公髮) ^ " 561177 Λ7 _B7_ 五、發明說明(17) 含量係藉黄光X -射線分析測得。多孔矽石1至4用於實 例中,多孔矽石5和A Μ T # 2 0 0 0 ( Mizusawa na C m c h c
中 例 較 比 於 用 \ly 石 沸 的 K K (請先閱讀背面之注意事項再填寫本頁) 訂··--------線· 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -20- 561177 A7 B7 五、發明說明(浴 附表2 調合物(pbw) 實例 比較例 1 2 3 4 5 1 2 淸漆型環氧樹脂ϋ 59.1 59.1 59.1 59.1 59.1 59.1 59.1 固化劑 35.4 35.4 35.4 35.4 35.4 35.4 35.4 溴化的環氧樹脂5) 5 5 5 5 5 5 5 矽烷偶合劑0) 1.5 1.5 1.5 1.5 1.5 1.5 1.5 Hoechst Wax E 1.5 1.5 1.5 1.5 1.5 1.5 1.5 三苯基膦 1.3 1.3 1.3 1.3 1.3 1.3 1.3 Sb2〇3 5 5 5 5 5 5 5 多孔矽石1 346 - - 277 277 - - 多孔矽石2 - 346 - - - - - 多孔矽石3 - - 346 - - - - 多孔矽石4 - - - 69 - - - 多孔矽石5 - - - - - 346 - AMT #2000 - - - - - - 346 球形矽石7) 18 18 18 18 18 18 18 微球形矽石8) 104 104 104 104 104 104 104 微球形矽石9) 52 52 52 52 52 52 52 球形氧化鋁1ϋ) - - - - 69 - - 多孔砂石含量(重量%) 55 55 55 55 44 55 - 螺旋形流動(公分) 95 105 110 95 96 106 32 膠凝時間(秒鐘) 16 16 15 16 15 16 20 熔融黏度(Pa.s) 20 18 18 20 16 18 500 模製硬度 85 87 85 85 86 87 75 撓曲強度(牛頓/平方毫米) 142 142 132 142 142 142 108 結合力(公斤) 4.2 4.1 3.9 4.3 4.0 3.8 0.2 吸濕量(重量%) 3.0 2.3 2.1 1.8 1.8 1.0 3.0 傳熱性(瓦特/ mK) 0.9 0.9 0.9 0.9 1.4 0.9 0.9 密封試驗 4 4 4 4 3 NG 1 (請先閱讀背面之注意事項再填寫本頁) 訂·*--------線為 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -21 - 561177
7 7 A B 五、發明說明(19) 經濟部智慧財產局員工4费合作社印製
附表3 調合物(pbw) > 實例 · 比較例 6 7 8 9 10 3 淸漆型環氧樹脂u 59.1 59.1 59.1 59.1 • 59.1 雙酚基型環氧樹脂2) 一 • • 麵 45.6 - 固化劑3) 35.4 35.4 35.4 35.4 鱗 35.4 固化劑4) - - - 華 47.0 - 溴化的環氧樹脂5) 5 5 5 5 5 5 矽烷偶合劑6) 1.5 1.5 1.5 1.5 1.5 1.5 Hoechst Wax E 1.5 1.5 1.5 1.5 1.5 1.5 三苯基膦 1.3 1.3 1.3 1.3 1.3 1.3 Sb2〇3 5 5 5 5 5 5 多孔矽石1 63 315 378 362 472.5 爾 球形矽石7) 301 49 • 56 73.5 364 微球形矽石‘s) 104 104 90 120 156 104 微球形矽石y) 52 52 52 60 78 52 多孔砂石含量(重量%) 10 50 60 51 53 - 螺旋形流動(公分) 115 112 90 95 100 120 膠凝時間(秒鐘) 16 16 16 16 16 16 熔融黏度(Pa.s) 19 18 21 16 18 14 模製硬度 85 86 87 86 85 86 撓曲強度(牛頓/平方毫米) 142 137 147 147 147 137 結合力(公斤) 4.1 3.9 3.9 4.2 4.0 2.8 吸濕量(重量%) 0,7 3.1 3.3 2.6 2.2 0.4 密封試驗 1 3 4 3 3 NG (請先閱讀背面之注意事項再填寫本頁) --------.丨訂-^--------線* 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) •22- 561177 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(20) 註:· ,
1 )淸漆型環氧樹脂:Nippon Kayaku Κ.Κ,,E,〇CN 44〇〇,環氧基當量190 2 )雙酚基型環氧樹脂:Yuka Shell K.K.,Y X — 4000HK,環氧基當量19〇 3 )固化劑:Meiwa Chemical K.K.,酚淸漆樹脂 D L — 9 2 L,酚當量1 1 〇 4 )固化劑:Mitsui Toatsu K.K·,Thyolx樹脂(酣芳院基 樹脂)XL — 225 — 3L,酚當量168 5 )溴化的環氧樹脂:Nippon Kayaku K.K·,B R E N - 1〇5,環氧基當量280 6 )砂院偶合劑:Shin-Etsu Chemical Co.,Ltd.,KBM — 4 0 3 7 )球形矽石:平均顆粒尺寸1 2微米,大於5 〇微米的 粗粒比例低於0 · 5重量% (以S i e r u s雷射法測定) 8 )微球形石夕石:平均顆粒尺寸2微米,Adomatech,S〇
-3 2 R 9 )微球形矽石:平均顆粒尺寸〇 · 5微米,Adomatech,
5 〇 一 2 5 R 1〇)球形氧化鋁:平均顆粒尺寸2 0微米,Tatsumori K. K. 由前面的例子得知,本發明範圍內的環氧樹脂組成物 和以其密封的半導體封裝具有極佳性質。由附表2可以看 川:使用比表面積較小和吸濕量較低的矽石時,在密封吾式 -----^——.——--------丨訂----------線· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -23- 561177 A7 _____ B7 _ 五、發明說明(21) 驗中,中_封裝的密封效果無法令人滿意。使用傳統多孔 砂石(沸石)時,受到雜質的影響,流動、固化·、黏合和 密封性無法令人滿意。由附表3可以看出,使用本發明範 圍內的多孔矽石但用量較少時,密封試驗結果無法令人滿 意。密封效果隨著多孔矽石添加量的提高而提高。 已描述容易模製和固化成滲潮性低且信賴度高之組件 之包含多孔沸石的環氧樹脂組成物。 茲將日本專利申請案第1 1 一 3 4 2 9 4 6號列入參 考。 雖然已描述一些較佳實施例,但由前面的描述可得知 許多修飾和變化。因此,應瞭解除了前面特定描述之外, 亦可於不背離所附申請專利範圍的情況下實施本發明。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印鉍 -24- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 561177 經濟部智慧財產局員工消費合作社印製 T4V A8 B8 C8 D8 六、申請專利範圍 第89125643號專利申請案 中文申請專利範圍修IQt . 修正 民國| 9T举1? 修正 1 · 一種環氧樹脂組成物,包含環氧 無機塡料,該無機塡料是比表面積6至2 、真實比重2 · 0至2 · 2及平均顆粒尺 的多孔矽石形式,多孔矽石的含量爲整個 的4 0至9 0重量%,及固化劑的含量, 份重的環氧樹脂,爲至多1 〇 〇份重。 2 .如申請專利範圍第1項之環氧樹 ,多孔矽石製自:藉溶膠法形成重均顆粒 微米的矽膠,及使矽膠於7 0 0至1 2 0 0 3 ·如申請專利範圍第1項之環氧樹 ,維持於2 5 °C、7 0 % R Η 2 4小時 矽石的吸濕度至少0 . 3重量%。 4 ·如申請專利範圍第1項之環氧樹 ,多孔矽石的鹼和鹼土金屬含量各不超過1 5 ·如申請專利範圍第1項之環氧樹 模製中空封裝中之使用。 6 · —種以環氧樹脂組成物之固化產 製的中空半導體封裝,該組成物包括環氧 無機塡料,該無機塡料包括比表面積6至 克、真實比重2 . 0至2 · 2及平均顆粒 樹脂、固化劑和 0 0平方米/克 寸2至5 0微米 環氧樹脂組成物 相對於每1 0 0 脂組成物,其中 尺寸不超過5 0 °C鍛燒。 脂組成物,其中 的情況下,多孔 脂組成物,其中 p p m 〇 脂組成物於預先 物密封之預先模 樹脂、固化劑和 2 0 0平方米/ 尺寸2至5 0微 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 561177 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 米的多孔矽石’多孔矽石的含量爲整個環氧樹脂組成物的 至少5 5重量% ’及固化劑的含量,相對於每1 〇 〇份重 的環氧樹脂,爲至多1 〇 0份重。 7 · —種環氧樹脂組成物,包括環氧樹脂、充當固化 劑的酚樹脂及無機塡料,該無機塡料是比表面積6至 200平方米/克、真實比重2 . 0至2 . 2及平均顆粒 尺寸2至5 0微米的多孔矽石形式,多孔矽石的含量爲整 個環氧樹脂組成物的4 0至9 0重量%,及固化劑的含量 ,相對於環氧樹脂中每莫耳的環氧基,爲在固化劑中 ◦ · 5至1 · 6莫耳的酚的羥基。 8 . —種以環氧樹脂組成物之固化產物密封之預先模 製的中空半導體封裝,該組成物包括環氧樹脂、充當固化 劑的酚樹脂及無機塡料,該無機塡料包括比表面積6至 200平方米/克、真實比重2 · 〇至2 . 2及平均顆粒 尺寸2至5 0微米的多孔矽石,多孔矽石的含量爲整個環 氧樹脂組成物的至少5 5重量%,及固化劑的含量,相對 於環氧樹脂中每莫耳的環氧基,爲在固化劑中〇 · 5至 1 · 6莫耳的酚的羥基。 本紙張尺度適用中國國家榡準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)-2-
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JP2000191890A (ja) * | 1998-10-20 | 2000-07-11 | Nitto Denko Corp | 半導体封止用樹脂組成物およびそれを用いた半導体装置 |
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- 2000-12-01 US US09/726,575 patent/US6399677B2/en not_active Expired - Lifetime
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- 2000-12-02 KR KR1020000072696A patent/KR100678345B1/ko active IP Right Grant
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JP2001220496A (ja) | 2001-08-14 |
US20020076558A1 (en) | 2002-06-20 |
US6399677B2 (en) | 2002-06-04 |
US6569532B2 (en) | 2003-05-27 |
JP4614214B2 (ja) | 2011-01-19 |
US20010004651A1 (en) | 2001-06-21 |
KR20010062093A (ko) | 2001-07-07 |
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