JP6886770B2 - 半導体素子密封用エポキシ樹脂組成物およびこれを使用して密封された半導体パッケージ - Google Patents
半導体素子密封用エポキシ樹脂組成物およびこれを使用して密封された半導体パッケージ Download PDFInfo
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- JP6886770B2 JP6886770B2 JP2015147122A JP2015147122A JP6886770B2 JP 6886770 B2 JP6886770 B2 JP 6886770B2 JP 2015147122 A JP2015147122 A JP 2015147122A JP 2015147122 A JP2015147122 A JP 2015147122A JP 6886770 B2 JP6886770 B2 JP 6886770B2
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- IMHDGJOMLMDPJN-UHFFFAOYSA-N dihydroxybiphenyl Natural products OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 claims description 3
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 claims description 3
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
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- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 6
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- AVGTYNJIWPQPIH-UHFFFAOYSA-N hexan-1-amine;trifluoroborane Chemical compound FB(F)F.CCCCCCN AVGTYNJIWPQPIH-UHFFFAOYSA-N 0.000 description 1
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/186—Material
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Description
本発明のエポキシ樹脂(A)は、半導体素子密封用として一般的に含まれるエポキシ樹脂であれば特に制限されない。具体例において、エポキシ樹脂は、分子中に2つ以上のエポキシ基を含有するエポキシ化合物が好ましい。
本発明のポリオルガノシロキサン樹脂(B)は、下記式3の繰り返し単位を含むポリオルガノシロキサン化合物(樹脂)である:
本発明の硬化剤(C)は、半導体素子密封用として通常使用されるものであり、2つ以上のフェノール性水酸基またはアミノ基等を有するものであれば特に制限されなく、モノマー、オリゴマーおよびポリマーからなる群から選ばれる1種以上を使用してもよい。
本発明の硬化促進剤(D)は、エポキシ樹脂とフェノール系硬化剤の反応を促進する。前記硬化促進剤としては、3級アミン、有機金属化合物、有機リン化合物、イミダゾール系化合物、またはホウ素化合物等を使用してもよく、必ずしもこれに制限されるのではない。例えば、有機リン化合物を使用してもよい。
無機充填剤は、エポキシ樹脂組成物において機械的物性を向上させ、応力を下げるために使用する。前記無機充填剤の例としては、溶融性シリカ、結晶性シリカ、炭酸カルシウム、炭酸マグネシウム、アルミナ、マグネシア、クレイ、タルク、ケイ酸カルシウム、酸化チタン、酸化アンチモン、およびガラス繊維等を挙げることができるが、これに制限されるのではない。これらは、単独または2種以上混合して使用してもよい。
本発明にかかるエポキシ樹脂組成物は、前記成分以外に、添加剤として着色剤、カップリング剤、離型剤、応力緩和剤、架橋増進剤、およびレベリング剤等の添加剤をさらに含んでもよい。
本発明の一実施形態(具体例)にかかる半導体パッケージは、基板;前記基板上に実装された半導体素子;前記半導体素子と前記基板を電気的に通電させる接続部;および前記半導体素子と前記接続部を密封するモールディング部を含む。
下記実施例および比較例で使用した成分の仕様は次の通りである。
オルソクレゾールノボラック型エポキシ樹脂(EOCN−1020−55,日本化薬社)を使用した。
下記式4で表されるポリオルガノシロキサン樹脂を合成例に従い製造して使用した。
ザイロック型フェノール樹脂であるHE100C―10(Air Water社)を使用した。
トリフェニルホスフィンであるTPP(Hokko社)を使用した。
平均粒径が16μmである球状溶融シリカと、平均粒径が0.5μmである球状溶融シリカを9対1の重量比で混合して使用した。
(f1)メルカプトプロピルトリメトキシシランであるKBM―803(Shinetsu社)、および(f2)メチルトリメトキシシランであるSZ―6070(Dow Corning chemical社)を混合して使用した。
(g1)離型剤としてカルナバワックス、および(g2)着色剤としてカーボンブラックMA−600(Matsusita Chemical社)を使用した。
水とイソプロピルアルコールを5:5の重量比で混合した混合溶媒1kgを3口フラスコに投入した後、65℃を維持しながら3−グリシドキシプロピルジメトキシメチルシラン300gを硝酸0.1モルと1時間にわたって滴下した。滴下が完了した後、75℃で4時間加熱し、メトキシジメチルビニルシラン40gを投入した後、反応を実施した。次いで、室温に冷却した後、水層を取り除いてイソプロピルアルコールに溶解されたシロキサン溶液を製造した。次に、得られたシロキサン溶液を水で洗浄して副産物である有機酸を取り除いた。続いて、シロキサン溶液を減圧蒸留してイソプロピルアルコールを取り除いて前記式4で表されたポリオルガノシロキサンを得た。
下記表1の組成に従い、ヘンシェルミキサー(KEUM SUNG MACHINERY CO.LTD(KSM―22))を用いて均一に混合した後、連続ニーダーを用いて90℃ないし110℃で溶融混錬し、冷却、粉砕して半導体素子密封用エポキシ樹脂組成物を製造した。下記物性評価方法によって、物性測定した後、その結果物を表1に合わせて示した。
(1)スパイラルフロー(Spiral flow,inch)
EMMI規格を基準に金型を製作して成形温度175℃、成形圧力70Kgf/cm2で流動長さ(inch)を評価した。
昇温速度10℃/minでTMA(熱機械分析;Thermal Mechanical Analyser)を使用して測定した。
トランスファー成形機を用いて、金型温度175℃、注入圧力9.3MPa、硬化時間90秒で半導体素子パッケージ{200FBGA(Fine Ball Grid Array;ファインピッチ・ボールグリッドアレイ),0.22t(厚),SSE(Streaming SIMD Extensions)}を連続して成形した。ゲート詰り、エアベント詰り、金型へのパッケージ取られ(package separation from the mold)、カル落ち(cull falling)等の成形不良が発生するまでのショット数を離型不良として測定し、その結果を下記表1に示した。
PCB(printed−circuit board:プリント回路基板)(200FBGA,0.22t,SSE)のPSR(photo solder resist:フォトソルダーレジスト)層上にシリコン系ダイ接着剤(ダウコーニング(Dow corning)社、DA−6633)を20μm厚で均一に塗布した後、接着力測定試片は30mm×30mmのシリコン系ダイ接着剤が塗布されたPCBに直径3mmの前記実施例および比較例で製造されたエポキシ樹脂組成物を成形して硬化試片を得た後、試片を175℃のオーブンに入れて4時間後硬化(PMC;post mold cure)させた試片と85℃/85%相対湿度条件下で168時間放置させた後、260℃で30秒間IR(赤外線)リフローを1回通過させることを3回繰り返すプレコンディション条件下における試片に対して、Die shear test(ダイのせん断試験)器(Dage 4000,DS−200 load cell)を用いて接着力を測定した。
前記実施例と比較例で製造された組成物で半導体パッケージを組み立てた後、175℃で4時間後硬化した。製造された半導体パッケージは、半導体素子を基板上にシリコン系ダイ接着剤(ダウコーニング(DOW corning)社、DA−6633)を介して実装させた。このような半導体パッケージを125℃で24時間乾燥させた後、85℃/85%相対湿度条件下で168時間放置させ、260℃で30秒間IRリフローを1回通過させることを3回繰り返すプレコンディション条件下におけるモールディング部とダイ接着フィルムの界面上クラック発生有無を非破壊検査器であるC−SAM(Scanning Acoustical Microscopy;Cモード超音波顕微鏡)を用いてクラック有無を評価した。
Claims (9)
- (A)エポキシ樹脂(但し、下記式3で表される繰り返し単位を含むポリオルガノシロキサン樹脂(B)を除く。);
(B)下記式3で表される繰り返し単位を含むポリオルガノシロキサン樹脂;
(C)硬化剤;
(D)硬化促進剤、および
(E)無機充填剤;を含む半導体素子密封用エポキシ樹脂組成物であって、
前記エポキシ樹脂組成物全質量に対して、
エポキシ樹脂(A)3質量%〜15質量%;
ポリオルガノシロキサン樹脂(B)0.1質量%〜1.0質量%;
硬化剤(C)2質量%〜10質量%;
硬化促進剤(D)0.01質量%〜1.0質量%;および
無機充填剤(E)82質量%〜92質量%含む:
(前記式3において、R1〜R4は、それぞれ独立して置換または非置換されたC1〜C10アルキル基、置換または非置換されたC3〜C20シクロアルキル基、置換または非置換されたC6〜C20アリール基、置換または非置換されたC7〜C20アリールアルキル基、置換または非置換されたC1〜C20ヘテロアルキル基、置換または非置換されたC2〜C20ヘテロシクロアルキル基、置換または非置換されたC2〜C20アルケニル基、置換または非置換されたC2〜C20アルキニル基、置換または非置換されたC1〜C10アルコキシ基、エポキシ基置換有機基、または水酸基置換有機基で、一つ以上のR2は、エポキシ基置換有機基で、R3およびR4の一つ以上はビニル基含有有機基で、
nの平均値は0〜100(但し、0は除く)である)。 - 前記硬化剤(C)は、フェノールアラルキル型フェノール樹脂、ザイロック型フェノール樹脂、フェノールノボラック型フェノール樹脂、クレゾールノボラック型フェノール樹脂、ナフトール型フェノール樹脂、テルペン型フェノール樹脂、多官能型フェノール樹脂、多環芳香型フェノール樹脂、ジシクロペンタジエン系フェノール樹脂、ビスフェノールAとレゾールから合成されたノボラック型フェノール樹脂、トリス(ヒドロキシフェニル)メタンまたはジヒドロキシビフェニルを含む多価フェノール化合物、無水マレイン酸または無水フタル酸を含む酸無水物、メタフェニレンジアミン、ジアミノジフェニルメタン、およびジアミノジフェニルスルホンの一つ以上を含むことを特徴とする請求項1〜3のいずれか1項に記載の半導体素子密封用エポキシ樹脂組成物。
- 前記硬化促進剤(D)は、3級アミン、有機金属化合物、有機リン化合物、イミダゾール系化合物、またはホウ素化合物を含むことを特徴とする請求項1〜4のいずれか1項に記載の半導体素子密封用エポキシ樹脂組成物。
- 前記無機充填剤(E)は、溶融性シリカ、結晶性シリカ、炭酸カルシウム、炭酸マグネシウム、アルミナ、マグネシア、クレイ、タルク、ケイ酸カルシウム、酸化チタン、酸化アンチモン、およびガラス繊維よりなる群から選ばれてなる1種以上を含むことを特徴とする請求項1〜5のいずれか1項に記載の半導体素子密封用エポキシ樹脂組成物。
- 前記無機充填剤(E)は、平均粒径が0.001μm〜30μmである球状溶融シリカを含むことを特徴とする請求項1〜6のいずれか1項に記載の半導体素子密封用エポキシ樹脂組成物。
- 基板;
前記基板上に実装された半導体素子;
前記半導体素子および前記基板を電気的に通電させる接続部;および
前記半導体素子および前記接続部を密封するモールディング部を含み、
前記モールディング部は、請求項1〜7のいずれかに記載の半導体素子密封用エポキシ樹脂組成物を含むことを特徴とする半導体パッケージ。 - 前記半導体素子は、前記基板上にダイ接着フィルムを介して実装され、
前記ダイ接着フィルムは、シリコン系接着剤であることを特徴とする請求項8に記載の半導体パッケージ。
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