TW559965B - Method of forming a bond pad and structure thereof - Google Patents

Method of forming a bond pad and structure thereof Download PDF

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Publication number
TW559965B
TW559965B TW091120027A TW91120027A TW559965B TW 559965 B TW559965 B TW 559965B TW 091120027 A TW091120027 A TW 091120027A TW 91120027 A TW91120027 A TW 91120027A TW 559965 B TW559965 B TW 559965B
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TW
Taiwan
Prior art keywords
copper
layer
features
dielectric layer
height
Prior art date
Application number
TW091120027A
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English (en)
Inventor
Thomas S Kobayashi
Scott K Pozder
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Motorola Inc
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Publication of TW559965B publication Critical patent/TW559965B/zh

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description

559965 A7 ___ B7 五、發明説明（1 ) — 參考先前的申請 本申請書已經於2001年9月14日在美國提出，專利申請號 碼為 09/952,527 〇 ~ 發明的籤疇 本發明大體而言是有關半導體的範疇，而更特別的是有 關半導體的打線墊的範脅。 發明背景 在工業的半導體製程中，以銅取代移開的鋁，使一銅線 黏著附著在銅打線墊上是需要的。銅打線墊的問題為使用 化學機械拋光（CMP)時，會發生中間凹下。解決的方法是在 該銅打線墊中形成氧化物溝槽，以改善平坦化。然而，氧 化物溝槽難以確實地接觸具有探針縫合或線黏著的金屬。 若/又有溝槽’不只該CMP處理更困難，而且該探針縫合會 損宝又該打線塾’以至於危及線黏著的能力。因而，為了打 線塾的存在，需考慮溝槽的存在與銅線的線黏著，對銅打 線墊與探針縫合接觸的可靠程度。 圖示的簡述 以範例且不受限於附圖的方式說明本發明，其中相同的 參考符號表示類似的元件，而其中： 圖1說明根據本發明的實施例，陳列溝槽的部分半導體基 板的剖面圖； 圖2說明一部分具有形成一金屬層的圖丨的半導體基板； 圖3說明平坦化後，圖2的半導體基板； 圖4說明形成鈍化層後，圖3的半導體基板； -4-
559965 A7 _________B7 五、發明説明（2 ) 圖5說明圖樣化及姓刻該鈍化層後，圖4的半導體基板； 圖6說明形成一腐蝕障壁後，圖5的半導體基板； 圖7說明絲焊後的部分半導體基板；以及 圖8是根據本發明的實施例的打線墊的上視圖。 熟悉此技藝之人士會瞭解於圖中所說明的此些元件是為 了簡單清楚，因此不需要按比例繪製。例如，於圖中，相 對於其他的元件，加大若干元件的尺寸，以幫助促進對本 發明的實施例的瞭解。 詳述 於一實施例中，形成包括介電區與銅填充的溝槽打線墊 ，以改善銅線絲焊對銅打線墊與針探縫合的可靠程度。藉 由申請專利範圍，以及透過對參考附圖的較佳了解來闡述 本發明。 如圖1所顯示’在半導體基板1〇的表面上形成及圖樣化介 電層，以形成溝槽14與絕緣區12。於此所使用的名詞"基板 表面係用於指示基板10上的此些特徵頂的大部分曝露表 面。基板10為一直被製造的半導體基板，但不包括在最後 金屬層的後續處理期間所發生的形成打線墊。因此，基板 1 〇具有形成於其中的電晶體、位元線、字線等等。基板1 〇 具有一半導體層，例如石夕、鎵神化物、石夕鍺化物等等，而 且也包括一絕緣體，例如，矽絕緣體（S0I)。該介電層為最 後金屬層的介電層，而且能夠由化學氣相沉積（CVD)形成， 旋轉成類似的或上述的組合。該介電層為曝露在空氣中， 也幾乎完全不會起反應的介電材料，例如可以是四乙基氧 -5- 559965
石夕烧（TEOS)氣體。於實施例中，該介電層大約為〇」到工微 米的厚度。於實施例中，溝槽14與介於溝槽14間的通道9具 有相同的厚度’而另-實施例中，溝槽14的最大寬度不會 大於約4微米。於貫施例中，溝槽丨4為絕緣材料。溝槽的材 料與絕緣區12-樣是有好處的，因為只需要一沉積與一圖 樣化的處理步驟。如果溝槽14與絕緣區12為不同的材料， 沉積與圖樣化超過丨介電材料，對製造處理而言，會增加整 個製程的時間。 立形成溝槽14與絕緣區12之後，在該基板表面上形成第一 障壁層（未顯示），於實施例中，該第一障壁層為钽，由 形成大約400埃。其他耐火材料與其氮化物，例如TiN、Ti 與TaN，能夠被使用作為該第一障壁層。此外，也能夠使用 原子層沈積（ALD)或另外的方法。在該第一障壁層上形成一 種子層（未顯示）。於實施例中，該種子層為銅，由pvD形成 約800到1，500埃的厚度。 如圖2所顯不，在絕緣區12上及溝槽14之間與上面形成的 金屬層16,最好為銅。如果選擇使用該第一障壁層與該種 層’金屬層16也會覆蓋在其上。於實施例中，金屬層以為 一銅層與一銅填充，沉積在此些特徵或溝槽14之間及其上 。也可以使用其他有傳導性的材料，例如鎢與銅合金。以 電鍍或另一適合的處理形成金屬層16。所形成的金屬層16 的總量應該至少與通道9的高度一樣厚。於實施例中，沉積 8,000埃的銅。 形成金屬層16之後，例如以平坦化移除部分金屬層16 , -6- 本紙張尺度適财S 8家搮_(CNS) A4規格(2ι〇x 297公董) ------ 559965 A7 -_______Β7 五、發明説明（4 ) 以形成如圖3所顯示的鑲嵌結構18或金屬區18。通常，化學 機械拋光金屬層16 ,以產生金屬區18與溝槽14，一起形成 打線層1〇〇。此外，回蝕金屬層16以產生金屬區18。於該實 施例中，金屬層16為一銅層與一銅填充，平坦化該銅層與 銅填充，以形成幾乎完全平坦的表面，包括該銅填充的上 表面及所有溝槽14的上表面。金屬區18與溝槽14為打線墊 100或打線墊區100的一部分。 如圖4所顯示，形成打線墊1〇〇之後，在打線墊1〇〇與絕緣 區12上开> 成鈍化層2 〇。鈍化層2 〇可以為石夕氮化物、石夕氮氧 化物專4或其化合物，而且可以由cVD、PVD等等及其組 合所形成。已經發現500埃厚的矽氮化物與4,5〇〇埃厚的矽 氮氧化物可以作為鈍化層2〇。接著，用光抗蝕劑圖樣化鈍 化層20，並且蝕刻以形成通道9〇覆蓋在至少一部分打線墊 100上，如圖5所顯示。含氟的化學物質，例如夠被用 於蝕刻鈍化層20。於該實施例中，以蝕刻·ash•蝕刻處理形 成通道90，意指第一蝕刻，接著為ash，接著為第二蝕刻， 最好能或不能與第一蝕刻相同。也可以使用其他適合的方 法形成通道90。 於實施例中，形成第一蝕刻以形成部分通道9〇，並移除 δ亥第一姓刻所使用的光抗姓劑之後，在基板1 〇所有的區域 上’形成多硫亞氨層（未顯示），並圖樣化形成通道覆蓋打線 墊100與其他可能的區域。為了形成通道90的剩餘部分，實 行該第二蝕刻。可以使用或不使用於該第一蝕刻所使用的 同一蝕刻化學物質。該第二蝕刻處理會蝕刻該多硫亞氨層 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐） 559965 A7 _B7 五、發明説明（5 ) 未覆蓋的任何區域。 如圖5所顯示’當形成通道90，為了使溝槽μ凹進低於金 屬區1 8的上表面，實行由上往下的蝕刻，於實施例中為銅 填充。於該實施例中所呈現的鈍化層2〇 ,係由上往下姓刻 ，可以確保從通道90徹底移除鈍化層2〇,以提供給後續的 絲焊。該銅填充的高度大於眾多特徵或溝槽14的高度，而 凹處15形成在溝槽上，介於該溝槽的高度與該銅填充的高 度間。凹處15至少大約為100埃，而更特別的是大約為6〇〇 埃。熟悉此項技藝之人士能夠裁定，凹處丨5的深度不能大 於溝槽14的高度。於實施例中，凹處的總量介於大約1 〇〇埃 與2000埃之間，或者更特別的是介於大約600埃與2〇〇〇埃之 間。 希望凹處1 5夠深，使探針80能適用於一部分的打線墊1 〇〇 ’該探針將沿著溝槽14的上面滑動，而且與金屬區丨8接觸 ，如圖5所顯示《該凹處也能夠使任何增加在探針8〇上的殘 骸脫離且沉積在至少一凹處15，或者刮去在溝槽14上表面 的殘骸。此外，使用溝槽14，能阻止探針80與打線墊1 〇〇中 的金屬區18的底部接觸，並且能移除至少部分已接觸的金 屬區1 8，與先前技藝的案例一樣，未使用溝槽會導致較小 的絲焊接觸區。 由於該溝槽與金屬區是共面的，所以使用打線墊能夠防 止對該打線墊的穿透，以確保該探針與該金屬區之間的接 觸是足夠的。此外，此些溝槽與該探針的接觸會產生不傳 導的殘骸，會黏附在該探針的頂端，並增加打線墊的損毀 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559965 A7
五、發明説明（6 或減少電接觸金屬區18的能力。 參考圖5,於實施例中，探針8〇直接與一部分的打線塾 100接觸，意指該探針不是經〇間層與打線墊⑽的部分 接觸 在形成凹處15之後，選擇性地形成第二障壁層22或腐蝕 障壁層22覆蓋在溝槽U與金屬區18上，保護打線墊1〇〇遠離 含氧或腐蝕的空氣。於實施例中，第二障壁層22為薄玻璃 材料，係由CVD或旋轉沉積。例如，第二障壁層22可以是 包括矽、碳、氧與氫的材料，例如與Kulicke & s〇ffa Industries Inc·的〇P2(SM)防止氧化處理聯合銷售的薄膜。 第二障壁層22的厚度小於凹處15的高度。於實施例中，第 二障壁層22小於大約100埃。 另一選擇，第二障壁層22可以為固體、膠體或液體形式 的腐蝕抗化劑。當使用液體的腐蝕抗化劑時，沉積該腐蝕 抗化劑，使至少部分填充凹處15覆蓋在溝槽14上。然而使 用液體的腐蝕抗化劑，凹處15能夠作為該液體的儲存槽， 而由於該液體與金屬區18的可濕性，會在整個期間釋放該 液體。因此，在整個期間以來自凹處15的液體腐蝕抗化劑 取代金屬區18上表面蒸發掉的腐蝕抗化劑，直到不再剩下 液體。各個凹處15所能容納的液體腐蝕抗化劑的總量為溝 槽14的凹處15的容積功能。較長的金屬區18需要被保護， 以遠離氧化環境，所以需要更多的液體腐蝕抗化劑，以及 較大的凹處15的容積。熟悉此項技藝之人士可依據凹處15 的高度，以及凹處15的直徑或寬度來識別凹處15的容積。 -9- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559965 A7 ___B7___ 五、發明説明（7 ) 於另一實施例中，第二障壁層22為助熔劑，可包括氣化 物或氟化物。通常，以蝕刻加熱移除該助熔劑。任何的腐 蝕會發生在金屬區18。後續該助熔劑蒸發掉或幾乎完全由 球體取代，在絲焊期間為線黏著的一部分，將在下面進一 步描述。 如果未形成第二障壁層22，在絲焊之前，於氮、氫、氬 或類似的環境中實行一標準的預清潔處理。另一選擇，隔 離通道90避免或最低限度地曝露於氧氣環境中。 形成打線墊1〇〇與第二障壁層22之後，假設希望，半導體 基板10係屬於一封裝基板（未顯示），而加熱係為了在半導體 基板10絲焊至少一打線墊1 〇〇，或者為了彼此間的電連接， 渴望在該封裝基板上有一墊。於實施例中，擠壓形成一金 屬線的線墊，而接著加熱在該線的末端形成一球狀體。接 著使用一鐵砧或環狀縫合清除打線墊1 〇〇的該球狀體與線β 藉由環狀縫合，超音波功率與壓力適用於線黏著24，適合 將線黏著24直接黏附在打線墊1 〇〇，意指該金屬線或線黏著 24不需經由中間層連接部分打線墊100。於一實施例中，該 金屬線或線黏著24直接附著在該銅填充的上表面，其中直 接與前面的陳述具有相同的意思。所產生的結構顯示於圖7 中。線黏著24可以為球狀體、楔形物或任何其他適合的形 狀。 如果使用第*一障壁層22’而且為腐蚀抗化劑，則僅出現 在絲焊之前或期間。另一選擇，如果使用助熔劑作為第二 障壁層22，該助熔劑可出現在絲焊之前、期間或之後。通 -10- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐） 559965 A7 ____B7 五、發明説明（8 ) 常，於絲焊期間取代該助熔劑，而且加熱驅離該腐蝕抗化 劑。然而，如果使用玻璃作為第二障壁層22，該玻璃會在 絲焊之前及絲焊期間出現。於此實施例中，當線黏著24適 用於覆蓋第二障壁層22，第二障壁層22會在金屬區18的角 落裂開，而在整個期間第二障壁層22剩餘的部分會因金屬 區1 8或溝槽14而裂開分離β線黏著之後所完成的產品可能 沒有第二障壁層22，即使第二障壁層22使用於後續的處理 。因此，於一實施例中，在附著該金屬線的期間該金屬 線或線黏著24穿透第二障壁層22或腐蝕障壁層。於另一實 施例中，當附著該金屬線或線黏著24的期間，移除該腐蝕 障壁層或障壁層22。 於圖8中顯示打線墊100的構造圖，包括複數個特徵，以 及圍繞著眾多特徵的銅金屬層。於顯示的實施例中，所曝 路的溝槽14被金屬區1 8圍繞形成行列圖樣，也可以使用任 何其他的圖樣與任何數量的溝槽14 ^然而，金屬區丨8的區 域至少大約為打線墊1〇〇與線黏著24接觸的百分之三十四。 此外，溝槽14可以為任何的形狀，例如矩形、正方形或圓 柱形。 因為凹處1 5能增加探針與絲焊的可靠程度，形成凹陷有 溝槽的最後層的金屬打線墊是有利的，藉由化學機械拋光 ’而減少拋光成碟狀，以及控制探針80進入打線墊1〇〇的穿 透深度，因而，限制於針探期間損毁打線墊100。此些凹處 使探針80上所增加的任何殘骸，沉積在至少一凹處中，因 而清潔探針80。此外，多次重覆針探之後，凹處1 5容許剩 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）
裝 訂
559965 A7 _____B7 五、發明説明（9 ) 餘金屬。針探之後，特別是多次重覆針探，剩餘的金屬能 增加絲焊處理的可靠程度及簡單性。另外，由於凹處15能 增加該金屬的表面區，對於由凹處15支援絲焊所產生的上 視圖，線黏著24能夠附著在金屬區18。再者，該上視圖考 慮將玻璃障壁層覆蓋在金屬區18之上，而使溝槽14更容易 破裂’提高黏著的強度與黏著的電接觸。 在則面的詳述中，已經以相關的特定實施例描述本發明 然而，熟悉此項技藝之人士應明白不需違背本發明如下 面的申請專利所提出的範圍，即可進行各種的改變與變化 。因此，本說明書與附圖係著重在說明，而沒有 思❶所有的此等改變希望包含於本發明的範圍内。 此等好處、其他優點與解決問題的方法已經在上面相關 的特定實施例中說明。然而，此等好處、優點、解決問題 的方法與任何元件不會被解釋為任何或所有申請專利範圍 的一緊要的、必要的或不可缺的特徵或元件，而該元件所 引起的任何好處、優點或解答，會發生或變得更明顯。如 於此所使用的，該名詞”包括”、，，組成，，或任何其它的變化， 希望涵蓋但不排除包括，因此包括一表列 法、技藝或裝置，不是只包括此些元件，而且=二 未特別列出或存在該處理、方法、技藝或裝置中的元件。 -12-

Claims (1)

  1. 559965 A B c D 夂、申請專利範圍 i 一種在半導體基板（ίο)上製造打線墊（1〇〇)的方法，包括： 在該半導體基板上形成一介電層（12); 圖樣化該介電層（12)，於該介電層（12)的打線墊區中 形成複數個特徵（14); 沉積一銅層（16)於該等複數個特徵（14)之中的該介電 層（12)，並沈積在該等複數個特徵（14)上； 回蝕該銅層（18)以容納一探針（80)後，化學機械拋光 該銅層（16)以形成一實質上平坦表面，其該平坦表面包 括該等複數個特徵（14)的曝露上方表面與該銅層（18)的 上方表面； 以回蝕該等複數個特徵（14)以在該回蝕鋼層中形成凹 處（15);以及 在該回蝕銅層上及該等凹處中鋪上一障壁層（22)。 2·如申請專利範圍第1項之方法，進一步包括： 在該半導體基板上形成一鈍化層（2〇);以及 回姓之前，形成至少部分通道（9〇)於該打線墊區上該 鈍化層（20)。 3·如申請專利範圍第2項之方法，進一步包括： 在該鈍化層上形成一多硫亞氨層；以及 回姓之前，形成至少部分通道於該打線墊區上的該鈍 化層。 4· 一種半導體基板製造方法，包括： 提供一半導體基板（10); 在該基板（10)上形成一介電層（12); -13- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 559965 A8 B8 C8 __ __D8 六、申請專利範圍~^ 一 '~一 姓刻該介電層（12)，以在一打線墊區中形成複數個特 徵（14); 在該介電層（12)上沉積銅層（16)，以在該介電層（12)上 形成一銅層（18)，而且一銅填充（is)在該等特徵之間及 上面； 移除該銅層（16)之一部份與該銅填充（18)，以形成一 實質上平坦表面，該平坦表面包括該銅填充（18)的上方 表面，以及各個特徵（14)的上方表面； 凹進的該等複數個特徵（14)，以形成低於該銅填充 (18)上方表面的該等凹處（15);以及 將一金屬線（24)直接附著在該銅填充（18)的上方表面。 5. —種半導體結構製造的方法，包括·· 提供一半導體基板（10); 在該基板（10)上形成一介電層（12); 蝕刻該介電層（12)，以在一打線墊區中形成複數個特 徵（14); 在該介電層（12)上沉積銅（16)，以在該介電層（12)上形 成一銅層（16)，而且一銅填充（18)在該等特徵（14)之間及 上面； 平坦化該銅層（16)與該銅填充（18)，以形成一實質上 平坦表面，該平坦表面包括用於直接容納該探針（8〇)的 該銅填充（18)的上方表面與每個特徵（14)的上方表面； 以及 凹進該等複數個特徵（14)，以形成低於該銅填充（18) -14- 本紙張尺度適用中國國家搮準(CNS) A4規格(210 X 297公釐) 訂
    559965 A8 B8 C8 —-—____D8 六、申請專利範園 的上方表面的該等凹處（15)。 6,如申請專利範圍第5項之方法，進一步包括使用一探針 (80)直接探測該銅填充（18)的上方表面。 7· 一種半導體結構，包括·· 一半導體基板（10); 一介電層（12),且覆蓋在該基板（1〇)上，並且具有沈 積於一打線墊區中的複數個特徵（14),其中該等特徵具 有一第一高度； 一位於該等特徵周圍的一銅填充（18),其延伸到一第 一兩度，其中該第二高度比第一高度高，藉此在該等特 徵上形成介於該第一高度與第二高度之間的該等凹處 (15)； 一障壁層（22)，其覆蓋在該銅填充（18)上且位於該等 凹處（15)中。 8 · 一種半導體結構，包括： 一半導體基板（10); 一介電層（12)，其覆蓋在該基板（10)上，並且具有沈 積於一打線墊區中的複數個特徵（14),其中該等特徵具 有一第一高度； 一位於該等特徵周圍的一鋼填充（18),其延伸到一第 一同度’其中該第二高度比第一高度高，藉此在該等特 徵上形成’丨於該第一尚度與第二高度之間的該等凹 (15) 〇 -15-
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