CN1314225A - 铜镀层集成电路焊点的结构和方法 - Google Patents

铜镀层集成电路焊点的结构和方法 Download PDF

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CN1314225A
CN1314225A CN01111396A CN01111396A CN1314225A CN 1314225 A CN1314225 A CN 1314225A CN 01111396 A CN01111396 A CN 01111396A CN 01111396 A CN01111396 A CN 01111396A CN 1314225 A CN1314225 A CN 1314225A
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China
Prior art keywords
copper
metal
layer
barrier metal
solder joint
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CN01111396A
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R·J·斯蒂尔曼
G·阿马多尔
H·R·泰斯特
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN1314225A publication Critical patent/CN1314225A/zh
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Abstract

一种坚固、可靠并且低成本金属结构和方法,其使电丝/带连接到集成电路的互连铜镀层。该结构含,沉积在氧化铜表面的、250铜扩散系数小于1×10E－23cm2/S并且厚约0.5－1.5μm的第一阻挡金属层。其在第一阻挡金属层上进一步包括第二阻挡金属层,该第二阻挡金属层250时具有少于1×10E－14cm2/s的第一阻挡金属扩散系数,并且厚度小于1.5μm。其最终包括可焊接金属的最外层,在该层上,焊接金属丝供冶金学连接。第一阻挡金属选自镍、钴、铬、钼、钛、钨及其合金。第二阻挡金属选自钯、钴、铂和锇。最外金属层选自金、铂和银。

Description

铜镀层集成电路焊点的结构和方法
本发明一般涉及半导体器件及加工领域，且更具体涉及铜镀层集成电路焊点(bond pads)金属罩的设计和制造。
在集成电路(IC)技术中，将纯净或搀杂铝镀金属，用于互连和焊点已经有40多年了。铝的主要优点包括：容易沉积和图案化。另外，将金、铜或铝制金属丝焊接到铝焊点上的技术已经发展为高度自动化、小型化和高可靠性的技术。在1995年10月3日出版的美国专利US 5455195(Ramsey等“在集成电路导电焊接中获得冶金学稳定性的方法”)中；在1993年9月14日出版的美国专利US 5244140(Ramsey等，“超过125 kHz的超声焊接法”)中；在1993年4月13日出版的美国专利US 5201454(Alfaro等，″在集成电路互连中增强金属间生长的方法″)中，以及在1991年1月11出版的美国专利US 5023697(Tsumura，“附有铜丝球焊接的半导体器件”)中，可找到将金属丝焊接铝的高技术标准实例。
在集成电路不断趋于小型化中，有源电路元件间互连的时间常数RC越来越决定可得到的IC散逸乘积。因此，互连铝的较高电阻性目前看来远不如铜等金属的低电阻。另外，铝对电子迁移显著的敏感性成为一个严重的障碍。因此，半导体工业中，目前存在采用铜作为更优选互连金属的强烈愿望，原因在于铜电导率更高，而电迁移灵敏度更低。然而，从成熟的铝互连技术的观点考虑，更换为铜是一个严峻的技术挑战。
必须屏蔽铜不让其扩散到集成电路的硅基材料中，防止位于硅晶格中的铜原子断送载流子寿命的特性，以便保护电路。对铜制的焊点，必须防止生产工艺流水线中形成氧化铜(I)薄膜，原因是这些薄膜严重阻碍了焊丝、特别是常规金丝球焊接的可靠附着。在和覆盖金属铝的氧化铝薄膜对照中，覆盖金属铜的氧化铜薄膜，不能轻易地用焊接加工中使用的联合热压和超声波能结合将其破坏。更困难的是，裸铜焊点易受腐蚀。
为了解决这些难题，已公开一种用铝层覆盖洁净铜焊点的方法，且因此重新确立了将被传统的金丝球焊焊接的铝焊点常规地位。合适焊接加工描述于1998年7月28日出版的美国专利US 5,785,236(Cheung等，″和现有IC丝焊接技术兼容的高级铜互连系统″)中。但所述方法仍有一些缺点。
首先，铝罩的制作费用比预想的高，因为该法要求另外附加金属沉积、图案化、蚀刻和清洁步骤。其次，该罩必须足够厚，以便防止铜经过该罩金属扩散以及可能的IC晶体管中毒。第三，制作罩的铝柔软，从而在电测试中受到多探针接触标记的严重破坏。其后果是，在焊点不断降低尺寸中，该破坏变得如此显著，以致后续球焊附着不再可靠。
因此，迫切需求这样一种冶金学焊点结构，该结构适于有铜互连镀层的集成电路，并且结合了制作焊点结构、完美地控制向上扩散的低成本方法，以及将金属丝焊接到这些焊点的可靠方法。该焊点结构应当足够灵活，以便适应不同集成电路产品系列以及广谱的设计和工艺变体。优选的是，应当在缩短制造周期及增加生产能力，并且无需增加昂贵的附加生产设备的情况下，完成这些革新。
本发明公开一种坚固、可靠且低成本的金属结构以及一种方法，该方法能使电线连接到集成电路(IC)的互连铜镀层。该结构包括在未氧化铜表面、于250℃铜扩散系数少于1×10E-23cm2/s时沉积厚度约0.5-1.5μm的第一阻挡金属层。其在第一阻挡金属层上进一步包括第二阻挡金属层，该第二阻挡金属层250℃时具有少于1×10E-14cm2/s的第一阻挡金属扩散系数，并且厚度小于1.5μm。最后包括可焊接金属的最外层，在该层上焊接冶金学连接的金属丝。
第一阻挡金属选自镍、钴、铬、钼、钛、钨及其合金。该第二阻挡金属选自钯、钴、铂和锇。最外金属层选自金、铂和银。
本发明涉及带有铜互连镀层、尤其是带大量镀层点输入/输出或“焊点”的高密度和高速的IC。能在许多器件系列中找到这些电路，例如处理器、数码和模拟器件、逻辑器件、高频和大功率器件中，以及在大面积和小面积芯片类。
本发明的一个方面是，可应用于减少焊点面积并从而支持IC芯片小型化。因此，本发明有助于减缓不断变小的应用空间的制约，这些应用例如细胞式通讯、寻呼机、硬盘装置、膝上型计算机和医学仪器。
本发明的另一方面是，用无电沉积(electroless deposition)的自我限定加工来制作该焊点金属罩，由此避免了昂贵的光刻和对准技术。
本发明的再一方面是，以金属的扩散系数为导向，选择适当的金属偶对以及协调的层厚度，以便在升高的焊接温度下，使向上扩散及随后的焊接抑制性化学反应最小化。
本发明的另一方面是，通过消除探针标记及随后的难于焊接，改进晶片级多探针的加工性和可靠性。
本发明的另一目的是，提供柔性设计和加工概念，以便将它们应用于许多半导体系列产品，并且它们通常可应用于几代产品。
本发明的另一目的是，仅使用IC器件制作中最常采用的设计和加工，从而避免新的资本投资并使用已安装好的制造设备基地。
通过本发明所涉及的选择标准和适于大量产物加工流水线的有关教导，已经达到这些目的。为了适合焊接工艺的不同选择，已经成功进行各种改进。
在本发明的第一个实施方案中，在焊点铜的未氧化表面上沉积了可焊金属的浸渍层(例如，约40纳米)，以防止过量铜扩散到该表面。
在本发明的第二个实施方案中，将金属如钯播种在焊点铜的未氧化表面上，并且用阻挡金属层例如镍层覆盖。该阻挡层的厚度必须厚至可在焊接操作的高温下，阻挡过量铜向上扩散。最外层为可焊金属例如钯或金。该层必须厚至其防止镍向上扩散到表面，它会在该处氧化并阻碍焊接金属丝。
在本发明的第三个实施方案中，将钯或锡植在焊点铜镀层的未氧化表面上，并用镍层覆盖。随后以限制镍向上扩散的厚度沉积钯层。最后，在对金丝焊进行接操作之前，沉积可焊金属如金的最外薄层。
在所有优选的实施方案中，通过无电沉积沉积各种金属层，从而无需昂贵的光刻限定步骤。
当结合附图及所附权利要求书提出的新特征考虑时，本发明表现出的技术进步性及其各个方面会从下述本发明优选实施方案中显现。
图1 A和1B是本发明第一实施方案横截面的示意图。
图1A显示铜镀层集成电路焊点上的可焊接罩。
图1B显示包括了球焊金属丝的图1A焊点。
图2A和2B是本发明第二实施方案的示意图。
图2A显示铜镀层集成电路焊点上堆叠层的可焊接罩。
图2B显示包括了球焊金属丝的图2A焊点。
图3A和3B是本发明第三实施方案横截面的示意图。
图3A显示铜镀层集成电路焊点上堆叠层的可焊接罩。
图3B显示包括了球焊金属丝的图3A焊点。
图4是本发明第三实施方案更详细示意图。
图5是制作本发明第三实施方案焊点罩的加工流程方框图。
附件：阻挡金属层的计算厚度表，和没有阻挡金属的相比，这些厚度要求达到下面金属向上扩散减少80％以上。
图1A显示本发明第一实施方案的截面草图，一般用100表示。集成电路(IC)具有铜互连镀层，并且被不透湿保护外层101覆盖。通常用氮化硅制造该外层，一般厚500-1000纳米。在该外层上开窗孔102，以便暴露部分铜镀层103。在图1A中未示出的是包埋该铜并防止其扩散到IC部件中的下层(通常用氮化钽、氮化钽硅、氮化钨、氮化钨硅、钛、氮化钛或钛钨制造)。
图1A中，仅概略表示出集成电路的电介质部分104。这些电绝缘部分可不仅包括常规等离子体增强化学气相沉积的电介质如二氧化硅；而且包括介电常数更低的较新电介材料，例如含硅的氢倍半硅氧烷(hydrogen silsesquioxane)、有机聚酰亚胺、气凝胶和聚对亚苯基二甲基类(parylenes)，或者包括等离子体产生的或介电层的叠层或原硅酸四乙酯的臭氧化物(ozone tetraethylorthosilicateoxide)。由于这些材料比以前的标准绝缘体密度更小且机械性能更脆弱，所以常常对铜下面的该电介质进行增强。可从1998年5月18日递交的美国专利申请第60/085,876号(Saran等，“用于增强半导体焊点的精细沥青(pitch)系统和方法”)，以及从1998年7月14日递交的第60/092,961号(Saran，“有源集成电路的焊接系统和方法”)中找到实例。
由于铜对腐蚀敏感，且甚至氧化铜(I)薄膜也难于焊接上，所以，本发明提供如图1、2和3所示的，在外露铜上形成罩的结构和方法。按照本发明，该罩由金属组成，并且厚度协调一致，以致符合以下三项要求：
*该罩起阻挡铜向上扩散到罩表面的作用，铜在表面会妨碍随后的金属丝焊接作业。对于该罩，具体要选择金属和厚度使之相协调，达到和没有阻挡金属时相比，该罩在250℃减少铜向上扩散大于80％。
*用一种技术制作该罩，该技术避免昂贵的光刻步骤。具体使用无电沉积，沉积该罩的金属层。
*该罩金属具有可焊接的表面。具体可用常规的球焊和楔焊技术将金属丝及其它偶联元件(coupling members)与焊点冶金学连接。
如图1B、2B和3B所示，金属丝球焊是使用连接元件产生电连接的优选方法。另一种方法是采用楔形压焊剂的带焊法。与楔形压焊球焊不同，球焊在高温下操作，因此需要调谐本发明的材料和方法。
金属丝焊接过程开始时，使具有焊点的集成电路芯片与要焊接到该芯片上的目标在加热了的基座上定位，使它们的温度升高到170-300℃之间。一根金属丝110(见图1B、2B和3B)，一般是金、金-铍合金、其它金合金、铜、铝，或者它们的合金，直径范围一般为18-33微米，经加热的毛细管成串，该毛细管的温度通常在200-500℃范围内。在金属丝末端，用火焰或火花法产生自由的空气球。该球一般直径约1.2-1.6个金属丝直径。该毛细管移向该晶片的焊点处(图1A中的102)，并将球压靠在焊点的镀覆金属上(图1A和1B中的层105)。压力和超声波能结合经金属相互扩散产生强冶金结合形式。在焊接时，温度的通常范围是150-270℃。在图1B、2B和3B中，示意形式的111举例说明了金属丝球焊中附着的“球”。
对本发明而言重要的是，在金属丝结合方面的新技术进展，允许形成小却可靠的球接触以及严密控制形状的丝套圈。可获得7540微米小的球节。这些进展能在例如，Kulicke&Soffa,Willow Grove,PA,U.S.A制造的电脑化焊机8020，或者在TexasInstruments,Dallas,TX,U.S.A制造的ABACUS SA中找到。以预定和电脑控制方式移动毛细管，经空气创造出准确限定的形状。最后，该毛细管到达其需到达的目标，并被降低以便触及到目标的接触点。利用毛细管的痕迹，形成冶金学的针脚式点焊，并且燃烧掉金属丝以便释放毛细管。压合接触小而可靠；点焊痕迹的侧面尺寸是金属丝直径的1.5-3倍(其确切形状取决于所用毛细管的形状，例如毛细管的壁厚及毛细管的足迹)。
用于图1A和1B中阻挡层罩金属103的实例是铂、铑、铱和锇。对这些金属，铜在250℃的扩散系数小于1×10E-23cm2/s。因此，这些金属是良好的铜扩散阻挡层。对这些金属，通过扩散计算获得与没有这些层相比，减少铜扩散80％所要求的层厚。作为实例，附表列出当铜在250℃或160℃扩散时，以扩散时间(分钟)为参数的铂层厚度。阻挡层厚约0.5-1.5微米一般会满足降低铜的标准。
以上引用的金属，可用无电沉积沉积(以下更详细涉及该技术)。而且，这些金属是可焊接的。但是所引用金属的缺点是它们的成本太高。第二实施方案提供成本更低的解决方案，通常指图2A中的200。201指保护性外层，该外层确定焊点的尺寸202。203是焊点的铜镀层，204指下层电介材料。由两层提供覆盖铜203的金属罩：
层205定位在铜203之上，有时沉积在种籽金属层上(见图4)。层205的实例是镍、钴、铬、钼、钛、钨及其合金。这些金属不贵，能用无电沉积沉积；但它们的可焊性差。在这些金属中，250℃时，铜的扩散系数小于1×10E-23cm2/s。所以，这些金属是良好的铜扩散阻挡层。和缺少这些层相比，通过扩散计算获得减少铜扩散大于80％所要求的层厚度。作为实例，附表列出，当250℃或160℃扩散铜时，以扩散时间(分钟)为参数的镍层厚度。通常，阻挡层厚约0.5-1.5微米就会满足减少铜的标准。层206位于层205之上，作为罩的最外层；它们是可焊的，从而它们能接受丝焊接111。层206的实例为金、铂、钯和银。另外，250℃时，对在阻挡层205中使用的金属(例如镍)，这些金属的扩散系数小于1×10E-14cm2/s。因此，这些金属是层205材料扩散的良好扩散障碍。再有，从扩散计算得出和缺少层206时相比，将层205中所用金属向上扩散减少大于80％需要的层厚度。作为实例，附表列出，当250℃或160℃镍向上扩散时，以扩散时间(分钟)为参数的金层厚度(微米)。通常最外层厚度1.5微米或再略微少一些，将会安全地满足使金属从层205扩散降低的标准。
本发明第三实施方案提供一种优选溶液，这提供了进一步降低成本和改良的可焊性。通过分成两层，降低可焊金属层的总厚度，这两层均根据它们相互扩散的特性选择。图3中第三实施方案一般记为300；301是指确定焊点302尺寸的保护性外层。303是焊点的铜镀层，304是下面的电介材料。铜303之上的金属罩由三层提供：层305位于铜区303之上，有时沉积在种籽金属层上(在图3A和3B中未示出，但见于图4)。层305由起铜扩散阻挡层作用的金属组成。层305的实例包括镍、钴、铬、钼、钛、钨及其合金。这些金属不贵，并且可用无电沉积法沉积；但它们可焊性差。如上述，在这些金属中，250℃时，铜的扩散系数小于1×10E-23cm2/s。因此，这些金属是良好的铜扩散阻挡层。从扩散计算得出和缺少这些层相比，将铜扩散减少大于80％需要的层厚度。作为实例，附表列出，当250℃或160℃铜扩散时，以扩散时间(分钟)为参数的镍层厚度。通常，阻挡层厚约0.5-1.5微米就会满足减少铜的标准。层306位于层305 之上，作为有效的扩散阻挡层，阻挡305层中所用金属向上扩散。这旨在不再强调最外层307的阻挡作用，而更强调它的可焊性作用。因此，可降低最外层307所要求的厚度，从而降低了成本。层306的实例是，钯、钴、铂和锇。层307的实例是金、铂和银。用于层306的金属(例如钯)对用在阻挡层305中的金属(例如镍)250℃时具有小于1×10E-14cm2/s的扩散系数。从扩散计算得出和缺少层306时相比，将层305中所用金属向上扩散减少大于80％需要的层厚度。作为实例，附表列出，当250℃或160℃镍向上扩散时，以扩散时间(分钟)为参数的钯层厚度(微米)。通常层305厚度约0.4-1.5微米将会安全地满足使金属从层305扩散降低的标准。现在，能将最外可焊层307的厚度(例如金)降低到约0.02-0.1微米范围。
图4更详细地概述了本发明的第三实施方案；大多数尺寸范围是图1-3中引用过的，并且在图5中讨论了无电沉积和其它制作加工步骤。
保护性外层401具有确定了焊点尺寸的开口，并且具有足以容纳大多数堆叠层的厚度，将其覆盖在焊点集成电路铜镀层403的上面。将铜迹丝403嵌入耐火金属罩402(例如，氮化钽)中，其用电介质404包封(增强方法如上述)。
直接面对清洁且未氧化的铜表面403a的是该罩的第一层，种籽金属(例如钯，约5-10纳米厚；另一选择是锡)薄层408。紧挨种籽金属层的是金属层405(例如，镍)，作为阻挡铜向上扩散的阻挡层。在该第一阻挡层上面是金属层406(例如，钯)，作为第一阻挡金属(例如镍)向上扩散的阻挡层。该罩的最外层是金属层707(例如，金)，可将它用金属丝冶金学“球”焊接。如图4所示，在焊点开口外围401a之外，无电沉积加工可在保护性外层上沉积一些金属的层。
图5中详细描述了制作图4焊点罩所使用的无电沉积。当焊点在保护外层中露出之后，在焊点区域使铜IC镀层外露，罩的沉积过程始于501；加工步骤依次如下：
●步骤502：使用旋压技术(spin-on technique)将抗蚀剂涂覆到硅IC晶片的背面。该涂层将会防止在晶片背面上意外的金属沉积。
●步骤503：烘焙该抗蚀剂，一般在110℃烘焙约30-60分钟时间。
●步骤504：用等离子体灰化技术清洁裸露的焊点铜表面约2分钟。
●步骤505：在硫酸、硝酸或其它酸溶液中浸渍具有外露焊点铜的晶片，这样清洁约50-60分钟。
●步骤506：在溢流淋洗机中水洗约100-180秒。
●步骤507：将晶片浸渍在催化性金属氯化物溶液中，例如氯化钯，以便用约40-80秒“活化”铜的表面，即将“种籽金属层(例如钯)的层，沉积在清洁、未氧化的铜表面上。
●步骤508：在倾倒式淋洗机(dumprinser)中水洗约100-180秒。
●步骤509：第一阻挡金属的无电沉积。如果选择了镍，则用时150-180秒之间的镀覆将沉积约0.4-0.6微米厚的镍。
●步骤510：在倾倒式淋洗机(dump rinser)中水洗约100-180秒。
●步骤511：第二阻挡金属的无电沉积。如果选择了钯，则用时150-180秒之间的镀覆将沉积约0.4-0.6微米厚的钯。
●步骤512：在倾倒式淋洗机(dump rinser)中水洗约100-180秒。
●步骤513：可焊金属的无电沉积。如果仅需要薄金属层，则用自我限定表面的金属浸渍加工置换就足够了。如果选择金，镀覆400-450秒将沉积约30纳米厚的金。如果需要更厚的金属层(0.5-1.5微米厚)，则在浸渍过程后，紧接一个自催化步骤。
●步骤514：在倾倒式淋洗机(dump rinser)中水洗约100-180秒。
●步骤515：用约8-12分钟剥除晶片背面的保护性抗蚀剂。
●步骤516：用约6-8分钟旋转水洗并干燥。
焊点罩的制作过程在步骤517停止。
随后，如上述，通过球焊或带焊金属丝或带，建立冶金学连接。尽管引用作为举例的实施方案描述本发明，但该描述决非限制本发明。本领域的技术人员当参考该描述时，所举例实施方案的各种改进和联合，以及本发明其它实施方案对他们而言是显而易见的。作为实例，可将本发明用于除铜以外的IC焊点镀层，这些镀层是难于或不可能用传统的球焊或楔焊技术焊接，例如难熔金属和贵金属的合金。另一实例，本发明可扩展成分批加工，进一步降低制作成本。又一实例，可将本发明用于金属丝/带焊接和焊料互联的混合工艺中。因此，本发明应包括所附权利要求书概括的任何改进或结合。
                            表
   减少底层金属上扩散多于80％所需的阻挡金属层厚度(微米)
时间(分钟)         250(℃)     160(℃)
      铜在铂中
             3    4.68E-07    1.79E-09
            60    2.09E-06    8.01E-09
          1440    1.03E-05    3.93E-08
          4320    1.78E-05    6.80E-08
      铜在镍中
             3    5.39E-07    2.16E-09
            60    2.41E-06    9.66E-09
          1440    1.18E-05    4.73E-08
          4320    2.04E-05    8.19E-08
      铜在钯中
             3    1.30E-01    9.00E-02
            60    5.60E-01    4.10E-01
          1440    2.75E+00    2.00E+00
          4320    4.76E+00    3.46E+00
      镍在金中
             3    9.10E-01    1.10E-01
            60    4.06E+00    5.10E-01
          1440    1.99E+01    2.51E+00
          4320    3.45E+01    4.35E+00
      镍在钯中
             3    2.70E-02    8.00E-03
            60    1.22E-01    3.80E-02
          1440    5.98E-01    1.85E-01
          4320    1.04E+00    3.20E-01

Claims (28)

1．用于集成电路焊点的一种金属结构，该集成电路具有铜互连镀层，该结构包括：
未氧化铜的焊点表面；和
沉积在所述铜表面上的可焊接金属层，其250的铜扩散系数小于1×10E-23cm2/s并且厚约0.5-1.5μm。
2．根据权利要求1的焊点结构，其中，所述可焊接金属层选自铂、铑、铱和锇。
3．位于具有铜互连镀层的集成电路上的金属丝与焊点间的冶金学连接的一种结构，其包括：
未氧化铜的焊点表面；
沉积在所述铜表面上的阻挡金属层，其250的铜扩散系数小于1×10E-23cm2/s并且厚约0.5-1.5μm；
可焊金属的最外层，其250的阻挡金属扩散系数小于1×10E-14cm2/s并且厚度小于1.5μm；以及
焊接于所述最外可焊金属上的所述金属丝之一。
4．根据权利要求3的结构，其中所述阻挡金属层选自镍、钴、铬、钼、钛、钨及其合金。
5．根据权利要求3的结构，其中所述可焊金属层选自金、铂、钯和银。
6．根据权利要求3的结构，其进一步包括位于所述未氧化铜和所述阻挡金属层之间的薄种籽金属层。
7．根据权利要求6的结构，其中所述种籽金属为钯或锡。
8．根据权利要求3的结构，其中所述金属丝选自金、铜、铝及其合金。
9．在具有铜互连镀层的集成电路上，用于金属丝和焊点之间冶金学连接的一种结构，包括：
未氧化铜的焊点表面；
沉积在所述铜表面上的第一阻挡金属层，其250的铜扩散系数小于1×10E-23cm2/s并且厚约0.5-1.5μm；
位于所述第一阻挡金属层上的第二阻挡金属层，其250的第一阻挡金属
扩散系数小于1×10E-14cm2/s并且厚度小于1.5μm；
厚度约0.02-0.1μm的可焊金属最外层；以及
焊接于所述最外可焊金属上的所述金属丝之一。
10．根据权利要求9的结构，其中所述第一阻挡金属层选自镍、钴、铬、钼、钛、钨及其合金。
11．根据权利要求9的结构，其中所述第二阻挡金属层选自钯、钴、铂和锇。
12．根据权利要求9的结构，其中所述可焊金属层选自金、铂和银。
13．根据权利要求9的结构，其进一步包括位于所述未氧化铜和所述第一阻挡金属层之间的薄种籽金属层。
14．根据权利要求13的结构，其中所述种籽为钯或锡。
15．根据权利要求9的结构，其中所述金属丝选自金、铜、铝及其合金。
16．在具有铜互连镀层的集成电路上，于金属丝和焊点之间形成冶金学连接的一种方法，其包括步骤：
使所述焊点的所述铜镀层表面活化，沉积种籽金属：
经无电沉积镀覆一阻挡金属层，所述阻挡金属250的铜扩散系数小于1×10E-23cm2/s并且厚约0.5-1.5μm；
经无电沉积镀覆可焊金属最外层，所述可焊金属250的阻挡金属扩散系数小于1×10E-14cm2/s并且厚度小于1.5μm；以及
将所述金属丝之一焊接到所述最外可焊金属上。
17．根据权利要求16的方法，其中所述金属丝焊接步骤包括球焊或楔焊。
18．根据权利要求16的方法，其中所述焊点经一种方法形成，该方法包括：
在所述集成电路的整个表面沉积保护性外覆层，包括具有铜镀层的表面部分；并且
经光刻技术打开所述外覆层的选定区域，使所述铜镀层的表面外露。
19．根据权利要求18的方法，其在所述打开步骤后，进一步包括清洁步骤，是将所述外露铜表面浸入硫酸、硝酸或任何其他酸的溶液中。
20．根据权利要求16的方法，其中所述活化步骤包括将焊点浸入起催化作用的金属氯化物溶液中。
21．根据权利要求20的方法，其中所述金属氯化物为氯化钯，沉积的钯种籽。
22．根据权利要求16的方法，其中所述可焊金属层的无电沉积是浸镀。
23．根据权利要求16的方法，其中所述可焊金属层的无电沉积是后接自动催化镀的浸镀。
24．根据权利要求16的方法，在所述焊接步骤之前，其进一步包括电探针测量步骤，探测所述焊点的所述最外金属，基本上未留下探针标记。
25．根据权利要求16的方法，其中工艺步骤不延时地依序进行，还包括中间清洗步骤。
26．在具有铜互连镀层的集成电路上，于金属丝和焊点之间形成冶金学连接的一种方法，其包括步骤：
使所述焊点的所述铜镀层表面活化，沉积种籽金属；
经无电沉积镀覆第一阻挡金属层，所述阻挡金属250的铜扩散系数小于1×10E-23cm2/s并且厚约0.5-1.5μm；
经无电沉积(electroless deposition)在所述第一阻挡金属层上镀覆第二阻挡金属层，所述第二阻挡金属250时具有小于1×10E-14cm2/s的第一阻挡金属扩散系数并且厚度小于1.5μm；
经无电沉积镀覆可焊金属最外层；以及
将所述金属丝之一焊接到所述最外可焊金属上。
27．根据权利要求26的方法，进一步包括所述铜焊点镀层的清洗步骤，是将所述外露铜表面浸入硫酸、硝酸或任何其他酸的溶液中。
28．根据权利要求26的方法，其中所述活化步骤包括将焊点浸入一种起催化作用的金属氯化物溶液中，沉积所述金属的种籽。
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