TW557424B - Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device Download PDFInfo
- Publication number
- TW557424B TW557424B TW088118504A TW88118504A TW557424B TW 557424 B TW557424 B TW 557424B TW 088118504 A TW088118504 A TW 088118504A TW 88118504 A TW88118504 A TW 88118504A TW 557424 B TW557424 B TW 557424B
- Authority
- TW
- Taiwan
- Prior art keywords
- volatile memory
- circuit
- semiconductor integrated
- integrated circuit
- information
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims abstract description 715
- 239000004065 semiconductor Substances 0.000 title claims abstract description 174
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000003860 storage Methods 0.000 title claims abstract description 30
- 238000012545 processing Methods 0.000 claims abstract description 70
- 230000007547 defect Effects 0.000 claims abstract description 63
- 230000004044 response Effects 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 27
- 230000002079 cooperative effect Effects 0.000 claims description 27
- 230000000875 corresponding effect Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 230000009471 action Effects 0.000 claims description 23
- 238000012360 testing method Methods 0.000 claims description 22
- 238000001514 detection method Methods 0.000 claims description 21
- 230000003068 static effect Effects 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000008929 regeneration Effects 0.000 claims description 17
- 238000011069 regeneration method Methods 0.000 claims description 17
- 238000013461 design Methods 0.000 claims description 16
- 238000013500 data storage Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 230000006870 function Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000001568 sexual effect Effects 0.000 claims description 3
- 230000003936 working memory Effects 0.000 claims description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000012937 correction Methods 0.000 claims 1
- 238000005485 electric heating Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000007726 management method Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 230000008439 repair process Effects 0.000 claims 1
- 102100020800 DNA damage-regulated autophagy modulator protein 1 Human genes 0.000 description 26
- 101000931929 Homo sapiens DNA damage-regulated autophagy modulator protein 1 Proteins 0.000 description 26
- 238000009966 trimming Methods 0.000 description 18
- 239000003990 capacitor Substances 0.000 description 14
- 238000011068 loading method Methods 0.000 description 14
- 230000014759 maintenance of location Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 238000012544 monitoring process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 230000001172 regenerating effect Effects 0.000 description 6
- 238000012790 confirmation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 238000012552 review Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 102100026190 Class E basic helix-loop-helix protein 41 Human genes 0.000 description 2
- 101000765033 Homo sapiens Class E basic helix-loop-helix protein 41 Proteins 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 101710170230 Antimicrobial peptide 1 Proteins 0.000 description 1
- 101710170231 Antimicrobial peptide 2 Proteins 0.000 description 1
- 101100346432 Arabidopsis thaliana MRF4 gene Proteins 0.000 description 1
- 102100026191 Class E basic helix-loop-helix protein 40 Human genes 0.000 description 1
- 101710130550 Class E basic helix-loop-helix protein 40 Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Microcomputers (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32096298A JP4587500B2 (ja) | 1998-11-11 | 1998-11-11 | 半導体集積回路、メモリモジュール、記憶媒体、及び半導体集積回路の救済方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW557424B true TW557424B (en) | 2003-10-11 |
Family
ID=18127248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088118504A TW557424B (en) | 1998-11-11 | 1999-10-26 | Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6201733B1 (enExample) |
| JP (1) | JP4587500B2 (enExample) |
| KR (1) | KR100581448B1 (enExample) |
| TW (1) | TW557424B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI462572B (zh) * | 2005-06-22 | 2014-11-21 | Hamamatsu Photonics Kk | 半導體不良解析裝置、不良解析方法、及不良解析程式 |
| TWI897241B (zh) * | 2024-02-19 | 2025-09-11 | 華邦電子股份有限公司 | 記憶體儲存裝置及其操作方法 |
Families Citing this family (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100477494B1 (ko) * | 1995-01-31 | 2005-03-23 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 메모리 장치 |
| EP1066628B1 (en) | 1999-01-25 | 2003-11-12 | Koninklijke Philips Electronics N.V. | Record carrier and apparatus for scanning the record carrier |
| DE60043651D1 (de) | 1999-02-01 | 2010-02-25 | Renesas Tech Corp | Integrierte halbleiterschaltung und nichtflüchtiges speicherelement |
| JP3971536B2 (ja) * | 1999-09-14 | 2007-09-05 | 松下電器産業株式会社 | 強誘電体メモリ装置 |
| KR100375217B1 (ko) * | 1999-10-21 | 2003-03-07 | 삼성전자주식회사 | 전기적으로 재기입 가능한 불휘발성 메모리를 구비하는마이크로컨트롤러 |
| IT1313401B1 (it) * | 1999-11-23 | 2002-07-23 | St Microelectronics Srl | Sistema per la gestione del trimming di fusibili integrati inserito in una struttura di scan test. |
| JP4537964B2 (ja) * | 1999-12-10 | 2010-09-08 | 株式会社東芝 | 半導体集積回路 |
| WO2003088257A1 (en) * | 2002-04-10 | 2003-10-23 | Jeng-Jye Shau | Embedded electrically programmable read only memory devices |
| US7269765B1 (en) * | 2000-04-13 | 2007-09-11 | Micron Technology, Inc. | Method and apparatus for storing failing part locations in a module |
| JP2002025288A (ja) * | 2000-06-30 | 2002-01-25 | Hitachi Ltd | 半導体集積回路 |
| JP2002025272A (ja) * | 2000-07-10 | 2002-01-25 | Sharp Corp | 半導体記憶装置およびその評価方法 |
| US6785780B1 (en) * | 2000-08-31 | 2004-08-31 | Micron Technology, Inc. | Distributed processor memory module and method |
| US7051427B2 (en) * | 2000-09-29 | 2006-05-30 | Texas Instruments Incorporated | Integrated circuit trimming device broken die sensor |
| JP4413406B2 (ja) | 2000-10-03 | 2010-02-10 | 株式会社東芝 | 不揮発性半導体メモリ及びそのテスト方法 |
| JP3971565B2 (ja) * | 2000-11-06 | 2007-09-05 | 富士通株式会社 | 半導体装置及び半導体装置初期設定方法 |
| WO2002045093A1 (fr) * | 2000-11-29 | 2002-06-06 | Nec Electronics Corporation | Dispositif de memoire a semi-conducteur et circuit de conversion d'adresse |
| JP2002174664A (ja) * | 2000-12-08 | 2002-06-21 | Mitsubishi Electric Corp | 半導体集積回路および半導体集積回路の製造方法 |
| US6480428B2 (en) * | 2000-12-19 | 2002-11-12 | Winbond Electronics Corporation | Redundant circuit for memory device |
| US6584007B2 (en) * | 2000-12-29 | 2003-06-24 | Stmicroelectronics, Inc. | Circuit and method for testing a ferroelectric memory device |
| US7055074B2 (en) * | 2001-04-25 | 2006-05-30 | Hewlett-Packard Development Company, L.P. | Device to inhibit duplicate cache repairs |
| JP3644913B2 (ja) | 2001-07-23 | 2005-05-11 | 松下電器産業株式会社 | 半導体装置 |
| EP1425757B1 (en) * | 2001-08-13 | 2018-09-05 | EM Microelectronic-Marin SA | Programming an electronic device including a non-volatile memory, in particular for adjusting the features of an oscillator |
| JP2003123500A (ja) | 2001-10-12 | 2003-04-25 | Mitsubishi Electric Corp | 半導体装置 |
| US6754094B2 (en) | 2002-01-31 | 2004-06-22 | Stmicroelectronics, Inc. | Circuit and method for testing a ferroelectric memory device |
| JP2003233999A (ja) | 2002-02-07 | 2003-08-22 | Hitachi Ltd | 半導体集積回路及び半導体集積回路の製造方法 |
| JP2003346484A (ja) * | 2002-05-23 | 2003-12-05 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| JP4162076B2 (ja) * | 2002-05-30 | 2008-10-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP2004055100A (ja) | 2002-07-24 | 2004-02-19 | Elpida Memory Inc | メモリモジュールの救済方法、メモリモジュール、及び揮発性メモリ |
| US7067896B2 (en) * | 2002-11-13 | 2006-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Microelectronic fabrication having edge passivated bond pad integrated with option selection device access aperture |
| US7155637B2 (en) * | 2003-01-31 | 2006-12-26 | Texas Instruments Incorporated | Method and apparatus for testing embedded memory on devices with multiple processor cores |
| JP2004319034A (ja) * | 2003-04-18 | 2004-11-11 | Renesas Technology Corp | データプロセッサ |
| JP4325275B2 (ja) * | 2003-05-28 | 2009-09-02 | 株式会社日立製作所 | 半導体装置 |
| US7177170B2 (en) * | 2003-09-17 | 2007-02-13 | Micron Technology, Inc. | Apparatus and method for selectively configuring a memory device using a bi-stable relay |
| JP2005191506A (ja) * | 2003-12-24 | 2005-07-14 | Genusion:Kk | 不揮発性記憶装置、半導体集積回路装置、及び半導体装置 |
| KR100606242B1 (ko) * | 2004-01-30 | 2006-07-31 | 삼성전자주식회사 | 불휘발성 메모리와 호스트간에 버퍼링 동작을 수행하는멀티 포트 휘발성 메모리 장치, 이를 이용한 멀티-칩패키지 반도체 장치 및 이를 이용한 데이터 처리장치 |
| JP2005310285A (ja) | 2004-04-22 | 2005-11-04 | Toshiba Corp | 半導体集積回路装置 |
| JP2005316734A (ja) * | 2004-04-28 | 2005-11-10 | Sony Corp | 集積回路のモード設定方法及び装置 |
| JP4237109B2 (ja) * | 2004-06-18 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体記憶装置及びリフレッシュ周期制御方法 |
| JP2006053981A (ja) * | 2004-08-11 | 2006-02-23 | Fujitsu Ltd | 記憶装置、記憶装置リード方法 |
| JP2006107590A (ja) * | 2004-10-04 | 2006-04-20 | Nec Electronics Corp | 半導体集積回路装置及びそのテスト方法 |
| JP2006209861A (ja) * | 2005-01-27 | 2006-08-10 | Matsushita Electric Ind Co Ltd | 半導体集積回路およびそのテスト手法 |
| US20060190678A1 (en) * | 2005-02-22 | 2006-08-24 | Butler Douglas B | Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a single DRAM cache and tag |
| US7506100B2 (en) * | 2005-02-23 | 2009-03-17 | United Memories, Inc. | Static random access memory (SRAM) compatible, high availability memory array and method employing synchronous dynamic random access memory (DRAM) in conjunction with a data cache and separate read and write registers and tag blocks |
| DE102005009050B4 (de) * | 2005-02-28 | 2007-01-11 | Infineon Technologies Ag | Differentielle Ausleseschaltung für Fuse-Speicherzellen |
| US8049293B2 (en) | 2005-03-07 | 2011-11-01 | Sony Corporation | Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device |
| US7359279B2 (en) * | 2005-03-31 | 2008-04-15 | Sandisk 3D Llc | Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers |
| JP4401319B2 (ja) * | 2005-04-07 | 2010-01-20 | 株式会社日立製作所 | Ｄｒａｍ積層パッケージ並びにｄｒａｍ積層パッケージの試験および救済方法 |
| TW201101476A (en) | 2005-06-02 | 2011-01-01 | Sony Corp | Semiconductor image sensor module and method of manufacturing the same |
| JP4261515B2 (ja) * | 2005-06-27 | 2009-04-30 | 富士通マイクロエレクトロニクス株式会社 | 半導体メモリのバーンイン試験方法 |
| US7734866B2 (en) * | 2005-08-04 | 2010-06-08 | Rambus Inc. | Memory with address-differentiated refresh rate to accommodate low-retention storage rows |
| US7565479B2 (en) | 2005-08-04 | 2009-07-21 | Rambus Inc. | Memory with refresh cycle donation to accommodate low-retention-storage rows |
| US7444577B2 (en) * | 2005-08-04 | 2008-10-28 | Rambus Inc. | Memory device testing to support address-differentiated refresh rates |
| US7441949B2 (en) * | 2005-12-16 | 2008-10-28 | Micron Technology, Inc. | System and method for providing temperature data from a memory device having a temperature sensor |
| JP2007265557A (ja) * | 2006-03-29 | 2007-10-11 | Toshiba Corp | 半導体記憶装置 |
| KR100929155B1 (ko) | 2007-01-25 | 2009-12-01 | 삼성전자주식회사 | 반도체 메모리 장치 및 그것의 메모리 셀 억세스 방법 |
| US7929372B2 (en) | 2007-01-25 | 2011-04-19 | Samsung Electronics Co., Ltd. | Decoder, memory system, and physical position converting method thereof |
| US7494846B2 (en) * | 2007-03-09 | 2009-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Design techniques for stacking identical memory dies |
| US9229887B2 (en) * | 2008-02-19 | 2016-01-05 | Micron Technology, Inc. | Memory device with network on chip methods, apparatus, and systems |
| US7978721B2 (en) | 2008-07-02 | 2011-07-12 | Micron Technology Inc. | Multi-serial interface stacked-die memory architecture |
| US8086913B2 (en) | 2008-09-11 | 2011-12-27 | Micron Technology, Inc. | Methods, apparatus, and systems to repair memory |
| US8050092B2 (en) * | 2009-05-29 | 2011-11-01 | Seagate Technology Llc | NAND flash memory with integrated bit line capacitance |
| US9123552B2 (en) | 2010-03-30 | 2015-09-01 | Micron Technology, Inc. | Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same |
| JP5649888B2 (ja) | 2010-09-17 | 2015-01-07 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置 |
| JP2012109403A (ja) * | 2010-11-17 | 2012-06-07 | Elpida Memory Inc | 半導体装置及びその制御方法 |
| KR101881366B1 (ko) * | 2012-06-04 | 2018-07-24 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 동작 방법 |
| KR102044827B1 (ko) * | 2012-10-17 | 2019-11-15 | 삼성전자주식회사 | 데이터 로딩 회로 및 이를 포함하는 반도체 메모리 장치 |
| KR20150055933A (ko) * | 2013-11-14 | 2015-05-22 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
| JP6426437B2 (ja) * | 2013-11-22 | 2018-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US10012213B2 (en) | 2016-02-04 | 2018-07-03 | General Electric Company | System and method for upgrading multivendor wind turbines |
| US10318904B2 (en) | 2016-05-06 | 2019-06-11 | General Electric Company | Computing system to control the use of physical state attainment of assets to meet temporal performance criteria |
| US10354737B2 (en) * | 2017-06-22 | 2019-07-16 | Western Digital Technologies, Inc. | Non-volatile memory sub-block erasure disturb management scheme |
| KR20190006807A (ko) | 2017-07-11 | 2019-01-21 | 유성옥 | 물고기 포획용 통발 |
| KR102542286B1 (ko) * | 2018-02-21 | 2023-06-13 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
| KR102621778B1 (ko) | 2019-08-12 | 2024-01-09 | 에스케이하이닉스 주식회사 | 데이터 저장 장치, 이를 위한 내부전압 트리밍 회로 및 트리밍 방법 |
| KR102630096B1 (ko) * | 2019-08-23 | 2024-01-29 | 에스케이하이닉스 주식회사 | 데이터 저장 장치, 이를 위한 내부전압 트리밍 회로 및 트리밍 방법 |
| CN113228189B (zh) * | 2021-03-30 | 2024-09-03 | 长江存储科技有限责任公司 | 具有嵌入式固件修复机制的存储器件 |
| CN113409867B (zh) * | 2021-06-29 | 2023-12-15 | 芯天下技术股份有限公司 | 非易失性存储器编程方法、装置、电子设备及存储介质 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06139786A (ja) * | 1992-10-27 | 1994-05-20 | Fujitsu Ltd | 電気的消去及び書込み可能ｒｏｍ |
| US5619470A (en) * | 1994-08-17 | 1997-04-08 | Sharp Kabushiki Kaisha | Non-volatile dynamic random access memory |
| US5812468A (en) * | 1995-11-28 | 1998-09-22 | Micron Technology, Inc. | Programmable device for redundant element cancel in a memory |
| KR0172745B1 (ko) * | 1995-12-29 | 1999-03-30 | 김주용 | 플래쉬 메모리 장치 |
| US5986932A (en) * | 1997-06-30 | 1999-11-16 | Cypress Semiconductor Corp. | Non-volatile static random access memory and methods for using same |
| US6023761A (en) * | 1997-08-13 | 2000-02-08 | Vlsi Technology, Inc. | Method and system for using decompression on compressed software stored in non-volatile memory of an embedded computer system to yield decompressed software including initialized variables for a runtime environment |
| US6003133A (en) * | 1997-11-17 | 1999-12-14 | Motorola, Inc. | Data processor with a privileged state firewall and method therefore |
| US6078541A (en) * | 1998-04-28 | 2000-06-20 | Mitsumi Electronics Co., Ltd. | Device controller having volatile and non-volatile memory for storage of decompressed and compressed data |
-
1998
- 1998-11-11 JP JP32096298A patent/JP4587500B2/ja not_active Expired - Fee Related
-
1999
- 1999-10-26 TW TW088118504A patent/TW557424B/zh not_active IP Right Cessation
- 1999-11-02 KR KR1019990048087A patent/KR100581448B1/ko not_active Expired - Fee Related
- 1999-11-05 US US09/435,035 patent/US6201733B1/en not_active Expired - Lifetime
-
2000
- 2000-02-03 US US09/497,119 patent/US6341090B1/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI462572B (zh) * | 2005-06-22 | 2014-11-21 | Hamamatsu Photonics Kk | 半導體不良解析裝置、不良解析方法、及不良解析程式 |
| TWI897241B (zh) * | 2024-02-19 | 2025-09-11 | 華邦電子股份有限公司 | 記憶體儲存裝置及其操作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000035149A (ko) | 2000-06-26 |
| JP2000149588A (ja) | 2000-05-30 |
| US6341090B1 (en) | 2002-01-22 |
| US6201733B1 (en) | 2001-03-13 |
| JP4587500B2 (ja) | 2010-11-24 |
| KR100581448B1 (ko) | 2006-05-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW557424B (en) | Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device | |
| US6967888B2 (en) | Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device | |
| JP5179470B2 (ja) | プログラマブルセル | |
| CN101040343B (zh) | 用于静态随机存取存储器的字线驱动器电路及其方法 | |
| KR20180041427A (ko) | 복수의 퓨즈 비트들을 독출하는 오티피 메모리 장치 | |
| CN101833992B (zh) | 具有冗余存储单元的相变随机存储器系统 | |
| JP4532951B2 (ja) | 半導体集積回路の使用方法および半導体集積回路 | |
| TW440858B (en) | Semiconductor storage device having redundancy circuit | |
| JPH01261845A (ja) | 冗長回路 | |
| EP0352730B1 (en) | Semiconductor memory device provided with an improved system for detecting the positions using a redundant structure | |
| US4788460A (en) | Circuit arrangement of sense amplifier for rapid evaluation of logic state | |
| JPH04276392A (ja) | 半導体記憶装置 | |
| JP4245648B2 (ja) | 半導体集積回路 | |
| US7095662B2 (en) | Semiconductor memory device having first and second memory cell arrays and a program method thereof | |
| US7298646B1 (en) | Apparatus for configuring programmable logic devices and associated methods | |
| JP2006114212A (ja) | 半導体集積回路 | |
| JP3719902B2 (ja) | メモリ回路 | |
| JPH0334665B2 (enExample) | ||
| JP2006059530A (ja) | 半導体集積回路 | |
| JP2009141960A (ja) | 半導体集積回路 | |
| JP2003203980A (ja) | 半導体装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |