JPH0334665B2 - - Google Patents

Info

Publication number
JPH0334665B2
JPH0334665B2 JP56194774A JP19477481A JPH0334665B2 JP H0334665 B2 JPH0334665 B2 JP H0334665B2 JP 56194774 A JP56194774 A JP 56194774A JP 19477481 A JP19477481 A JP 19477481A JP H0334665 B2 JPH0334665 B2 JP H0334665B2
Authority
JP
Japan
Prior art keywords
memory cell
channel width
transistors
memory
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56194774A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5896768A (ja
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56194774A priority Critical patent/JPS5896768A/ja
Publication of JPS5896768A publication Critical patent/JPS5896768A/ja
Publication of JPH0334665B2 publication Critical patent/JPH0334665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56194774A 1981-12-03 1981-12-03 不輝発性半導体メモリ Granted JPS5896768A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56194774A JPS5896768A (ja) 1981-12-03 1981-12-03 不輝発性半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194774A JPS5896768A (ja) 1981-12-03 1981-12-03 不輝発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS5896768A JPS5896768A (ja) 1983-06-08
JPH0334665B2 true JPH0334665B2 (enExample) 1991-05-23

Family

ID=16330018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194774A Granted JPS5896768A (ja) 1981-12-03 1981-12-03 不輝発性半導体メモリ

Country Status (1)

Country Link
JP (1) JPS5896768A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6216264U (enExample) * 1985-07-16 1987-01-30
US5126808A (en) * 1989-10-23 1992-06-30 Advanced Micro Devices, Inc. Flash EEPROM array with paged erase architecture

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57667B2 (enExample) * 1974-05-11 1982-01-07
JPS5747515B2 (enExample) * 1974-09-30 1982-10-09

Also Published As

Publication number Publication date
JPS5896768A (ja) 1983-06-08

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