TW540252B - Materials and devices for blue phosphorescence based organic light emitting diodes - Google Patents
Materials and devices for blue phosphorescence based organic light emitting diodes Download PDFInfo
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- 239000000463 material Substances 0.000 title abstract description 92
- 239000002019 doping agent Substances 0.000 abstract description 42
- 238000001429 visible spectrum Methods 0.000 abstract description 2
- 238000002347 injection Methods 0.000 description 16
- 239000007924 injection Substances 0.000 description 16
- 230000000903 blocking effect Effects 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- 239000003446 ligand Substances 0.000 description 8
- KLCLIOISYBHYDZ-UHFFFAOYSA-N 1,4,4-triphenylbuta-1,3-dienylbenzene Chemical class C=1C=CC=CC=1C(C=1C=CC=CC=1)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 KLCLIOISYBHYDZ-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 5
- 238000004770 highest occupied molecular orbital Methods 0.000 description 5
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 5
- 235000010290 biphenyl Nutrition 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- -1 (4-biphenylyl) (4-tertiary-butylphenyl) Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 150000001616 biphenylenes Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 125000002529 biphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C12)* 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011593 sulfur Chemical group 0.000 description 2
- 229910052717 sulfur Chemical group 0.000 description 2
- 125000005259 triarylamine group Chemical group 0.000 description 2
- SXWIAEOZZQADEY-UHFFFAOYSA-N 1,3,5-triphenylbenzene Chemical compound C1=CC=CC=C1C1=CC(C=2C=CC=CC=2)=CC(C=2C=CC=CC=2)=C1 SXWIAEOZZQADEY-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 125000006188 2-phenyl benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C1=C(C([H])=C([H])C([H])=C1[H])C([H])([H])* 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000000319 biphenyl-4-yl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C1=C([H])C([H])=C([*])C([H])=C1[H] 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 description 1
- 239000004914 cyclooctane Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- DBNYWRKRZTXMCU-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 DBNYWRKRZTXMCU-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002790 naphthalenes Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- XNLICIUVMPYHGG-UHFFFAOYSA-N pentan-2-one Chemical compound CCCC(C)=O XNLICIUVMPYHGG-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/18—Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/346—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising platinum
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
- H10K85/6565—Oxadiazole compounds
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Description
540252
8.根據申請專利範圍第7項之發射層，其中該發射波峰係 在約450毫微米。 9·根據申請專利範圍第2項之發射層，其中該寬能隙主材 料包括選自由聯伸苯、經取代聯伸苯、聯三伸苯、經取 代聯三伸苯、萘、經取代蓁、四苯基丁二烯、及經取代 四苯基丁二烯所組成之群之材料。
10.根據申請專利範圍第2項之發射層，其中該載送電荷之 換雜劑材料包括選自由三芳基胺、金屬配位錯合物、及 經供體取代之茶所組成之群之材料。 裝 11·根據申請專利範圍第2項之發射層，其中該鱗光摻雜劑 材料包括具有以下通式之結構的化合物： Μ 一 一 mmmm 〇 \ / "λ Μ ) k \ ,,) \ C 一· η 訂 Φ 其中Μ為重過渡金屬；C — N為環金屬化配位子；〇 — χ為 配位配位子，其中X係選自由氧、氮及硫所組成之群； 及其中η等於1或2，及ρ等於〇或1。 1 2 ·根據申請專利範圍第11項之發射層，其中μ係選自由錄 、銷、娥、及金所組成之群。 1 3 · —種有機發光裝置之發射層，該發射層包括： 一寬能隙主材料；
7721J-W072J 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)
載送電荷之掺雜劑 摻雜劑存在；及 燐"光掺雜劑材料， 存在； 材料，其係以寬能隙主材料中之 其係以寬能隙主材料中之摻雜劑 電荷之捧雜劑材料包括電子輸送材料，及 掺雜劑㈣包括電洞輸送材料。 14.根據申請專利範圍第13項之 料之最低二重熊处畔b & ，、千汲見牝隙王材 -一咖電荷之摻雜劑材料之最低 15 μΤΛ各⑧於㈣光摻雜缝料之最低三重態能階。 .據利：園第二項之發射層，其中該寬能隙主材 《取氐二重怨能階高於該載送電荷之掺 低三重態能階。 I取 16.根據申請專利範圍第15項之發射層，其中該寬能隙主材 料具有至：^^乃電子伏特之在^^與^^能 的能隙。 17.根據中請專利範圍第13項之發射層，其中該寬能隙主材 料具有至少約3.5電子伏特之在HOMO與LUMO能階之間 的能隙。 1 8·根據申請專利範圍第丨3項之發射層，其中該發射層在可 見光譜之藍色區域中發射輻射。 19.根據申請專利範圍第18項之發射層，其中該輻射具有在 自約430毫微米至約470毫微米之範圍内之發射波學。 2〇·根據申請專利範圍第19項之發射層，其中該發射波學係 在約450毫微米。 772! 3-'> 30723 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公釐) 540252
.料„專利範圍第14項之發射層，其中該寬能隙主材 匕括選自由聯伸苯、經取代聯伸苯、聯三伸笨、經取 四七:伸丰:奈、經取代茶、四苯基丁二締、及經取代 冬基丁二烯所組成之群之材料。 22·根據申請專利範圍第14項之發射層，其中該載送電荷之 捧雜劑材料包括選自由，号二唆、三峻、及環辛四缔所组 成之群之材料。 23.根據申請專利範圍第14項之發射層，其中該濟光接雜劑 材料包括具有以下通式之結構的化合物： 罐 Ή 〇 c V / Μ 、） \ c X ^ 鳴一 η _ Ρ 其中Μ為重過渡金屬，C--N為環金屬化配位子；〇 — 配位配位子，其中X係選自由氧、氮及硫所組成之群 及其中η等於1或2，及ρ等於〇或1。 24·根據申請專利範圍第23項之發射層，其中％係選自由名 、銷、鐵、及金所組成之群。 25·根據申請專利範圍第14項之發射層，其中該寬能隙主本 料包括聚苯乙晞，該載送電荷之掺雜劑材料包括具有y 下化學結構之（4-聯苯基）(4-第三丁苯基）噚二唑（pdb) ··
-4- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐） 540252 A8 B8 C8 D8 六 申請專利範圍
及4燐光摻雜劑材料包括具有 雙（苯基吡啶）銥（ppIr): 以下化學結構之乙醯丙酮
及具有以下化學結構之乙醯丙酮雙（2_苯基笨 (BTIr)：
噻唑）銥 26· 一種有機發光裝置，包括·· 一陽極層； 一在陽極層上方之發射層，該發射層包括-寬能隙主 材料、：載送電荷之掺雜劑材料、及—燐光摻 ’其中孩載it電荷之#雜劑材料及_光摻雜 以寬也隙主材料中之捧雜劑存在；及 4、 一在發射層上方之陰極層； ，其中該載送電荷之摻雜劑材料包括電洞輸送 該燐光摻雜劑材料包括電子輸送材料。 料’及 77213-930723 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)
.根，申請專利範圍第26項之裝置，其中該寬能隙主材料 、最低一重悲能階及該載送電荷之摻雜劑材料之最低三 2重怨忐階各鬲於該燐光摻雜劑材料之最低三重態能階。 8·根^請專利範圍第27項之裝置，其中該寬能隙主材料 T瑕低二重態能階高於該載送電荷之摻雜劑材料之最低 三重態能階。 29·根據中請專利範圍第28項之裝置，其中該寬能隙主材料 具有至少約3.5電子伏特之在HOMO與LUMO能階之間的 能隙。 根據t π專利範圍第26項之裝置，其中該寬能隙主材料 具有至少約3.5電子伏特之在HOMO與LUMO能階之間的 能隙。 根據申μ專利範圍第26項之裝置，其中該發射層在可見 光邊之藍色區域中發射輻射。 32·根據中^請專利範圍第31項之裝置，其中該輕射具有在自 、’々 430毫微米至約47〇毫微米之範圍内之發射波峰。 33·根據申請專利範圍第32項之裝置，其中該發射波峰係在 約450毫微米。 34·根據申請專利範圍第27項之裝置，其中該寬能隙主材料 包括選自由聯伸苯、經取代聯伸苯、聯三伸苯、經取代 聯三伸笨、莕、經取代萘、四苯基丁二缔、及經取代四 苯基丁二晞所組成之群之材料。 35.根據申請專利範圍第27項之裝置，其中該載送電荷之摻 雜劑材料包括選自由三芳基胺、金屬配位錯合物、及經 77213-930723
540252 申請專利範圍 供體取代之莕所組成之群之材料。 36·根據申請專利範圍第27項之奘罢^ ^ ^ ϋ ^ 〈裝置，其中該燐光摻雜劑材 枓包括具有以下通式之結構的^ 一 ’ 一 /N 〇 \ /1 Μ \ V / \ C ->>- 一 η :中Μ為重過渡金屬；C-_N為環金屬化配位子 配位配位子，其中X係選自由氣、& … 及其中η等於丨或2^等於〇或丨。氣及硬所組成之群； ’其中Μ係選自由銥、 其更包括在陽極層與 其更包括在發射層與 其更包括在發射層與 其更包括在發射層與 其更包括在發射層與 •根據申凊專利範圍第3 6項之裝置 鉑、鏑、及金所組成之群。 •根據申凊專利範圍第2 6項之裝置 發射層之間之電洞注射層。 39·根據申請專利範圍第38項之裝置 陰極層之間之電子注射層。 4〇.根據申請專利範圍第39項之裝置 電子注射層之間之電洞阻斷層。 41·根據申請專利範圍第39項之裝置 電子注射層之間之激發子阻斷層。 42.根據申請專利範圍第40項之裝置， 電洞注射層之間之電子阻斷層。 其更包括在發射層與 43·根據申請專利範圍第40項之裝置，
772!i-^3〇7：J 540252 A8 B8 C8 D8 申請專利範圍 電洞注射層之間之激發子阻斷層。 44.根據申請專利範圍第26項之裝置，其更包括在發射層與 陰極層之間之電子注射層。 45·根據中請專利範圍第26項之裝置，其中該寬能隙主材料 包括一電子注射區域，其包含與陽極層接觸之寬能隙主 材料的未經摻雜區域；及一電洞注射區域，其包含與陰 極層接觸之寬能隙主材料的未經摻雜區域。 攻 46· —種有機發光裝置，包括： 一陽極層； 在陽極層上方之發射層，該發射層包括一寬能隙主 材料、一載送電荷之摻雜劑材料、及一燐光摻雜劑材料 ，其中孩載送電荷之摻雜劑材料及該鳞光摻雜劑材料係 以寬能隙主材料中之摻雜劑存在；及 一在發射層上方之陰極層； 其中該載送電荷之摻雜劑材料包括電子輸送材料，及 該燐光摻雜劑材料包括電洞輸送材料。 47·根據申請專利範圍第46項之裝置，其中該寬能隙主材料 之最低三重態能階及該載送電荷之摻雜劑材料之最低三 重態能階各高於該燐光摻雜劑材料之最低三重態能階。 48·根據申請專利範圍第47項之裝置，其中該寬能隙主材料 之最低三重態能階高於該載送電荷之摻雜劑材料之最低 三重態能階。 ^ 49·根據申請專利範圍第48項之裝置，其中該寬能隙主材料 具有至少約3.5電子伏特之在HOMO與LUMO能階之間的
本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)
A B c D 540252 、申請專利範圍 能隙。 5〇·根據中凊專利範圍第46項之裝置，其中該寬能隙主材料 具有至少約3.5電子伏特之在HOMO與LUMO能階之間的 能隙。 51·根據申請專利範圍第46項之裝置，其中該發射層在可見 光謂之藍色區域中發射輻射。 52· ^據^請專利範圍第51項之裝置，其中該輕射具有在自 、’勺430 J彳政米至約47〇耄微米之範圍内之發射波學。 53.根據中請專利範圍第52項之裝置，其中該發射波峰係在 約450毫微米。 54·根據申請專利範圍第47項之裝置，其中該寬能隙主材料 ^括選自由聯伸苯、經取代聯伸苯、聯三伸苯、經取代 =三伸苯、萘、經取代莕、四苯基丁二烯、及經取代四 苯基丁二埽所組成之群之材料。 a根據中請專利範圍第47項之裝置，其中該載送電荷之接 雜劑材料包括選自由哼二唑、三唑、及環辛四缔所組成 之群之材料。 56·根據中請專利範圍第47項之裝置，其中該燐光摻雜劑材 料包括具有以下通式之結構的化合物： Γ* 一 —* ~ 〇 \ / ^ Λ w 一 Μ / Ν η 一 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐）
540252 A8 B8 C8 D8
六、申請專利範圍 其中Μ為重過渡金屬；c，為環金屬化配位子；… 配位配位子’其中X係選自由氧、氮及麵組成之群； 及其中η等於1或2，及ρ等於0或1。 其中Μ係選自由銥、 其中該寬能隙主材料 5 7 ·根據申清專利範圍第$ $項之裝置 鉑、鉞、及金所組成之群。 5 8 ·根據申請專利範圍第4 7項之裝置 包括聚苯乙烯，該載送電荷之摻雜劑材料包括具有以下 化學結構之（4-聯苯基）（4-第三丁苯基）呤二唑（pDB):
及該燐光摻雜劑材料包括具有以下化學結構之乙醯丙酮 雙（苯基吡啶）銥（PPIr) ··
及具有以下化學結構之乙醯丙酮雙（2-苯基苯并邊σ圭）银 (BTIr)：
-10- 本紙張尺度適用中國國家標準(CNS) Α4規格（210 X 297公釐） 540252 申請專利範圍 A8 B8 C8 D8 59·根據申請專利範圍第46項之裝置 發射層之間之電洞注射層。 6〇·根據申請專利範圍第59項之裝置 陰極層之間之電子注射層。 61.根據申請專利範圍第60項之裝置 電予注射層之間之電洞阻斷層。 62·根據申請專利範圍第60項之裝置 電子注射層之間之激發子阻斷層 63·根據申請專利範圍第61項之裝置 電洞注射層之間之電子阻斷層。 根據申清專利範圍第61項之裝置 免/同〉主射層之間之激發子阻斷層 65·根據申請專利範圍第46項之裝置 陰極層之間之電子注射層。 66.根據申請專利範圍第46項之髮 ,, 衣1 〜丨你見肥陈王 广電子注射區域，其包含與陽極層接觸之寬能隙 材料的未經摻雜區域；及—雷、、 *、 』 电洞/王射區域，其包本盥 亟層接觸之宽能隙主材料的未經摻雜區域。 一 其更包括在陽極層與 其更包括在發射層與 其更包括在發射層與 其更包括在發射層 其更包括在發射層 其更包括在發射層 其更包括在發射層 與 與 與 與 其中該寬能隙主材料 主 陰 -11- 本纸張尺度適财a s家標準(CNS) M規格(咖，7公爱「
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2002
- 2002-03-13 AU AU2002306698A patent/AU2002306698A1/en not_active Abandoned
- 2002-03-13 JP JP2002571749A patent/JP5265840B2/ja not_active Expired - Lifetime
- 2002-03-13 EP EP02750605.4A patent/EP1374320B1/en not_active Expired - Lifetime
- 2002-03-13 KR KR1020037012019A patent/KR100916231B1/ko active IP Right Grant
- 2002-03-13 CN CNB02808084XA patent/CN100379049C/zh not_active Expired - Lifetime
- 2002-03-13 US US10/472,401 patent/US7294849B2/en not_active Expired - Lifetime
- 2002-03-13 WO PCT/US2002/007492 patent/WO2002074015A2/en active Application Filing
- 2002-03-13 EP EP20100177763 patent/EP2276084A1/en not_active Ceased
- 2002-03-14 TW TW091104821A patent/TW540252B/zh not_active IP Right Cessation
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2009
- 2009-12-17 JP JP2009286813A patent/JP2010080979A/ja not_active Withdrawn
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI497789B (zh) * | 2006-10-27 | 2015-08-21 | Univ Southern California | 用於有效獲取白光有機發光裝置（ｏｌｅｄ）之單重及三重激子的物質及架構 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100379049C (zh) | 2008-04-02 |
| WO2002074015A3 (en) | 2002-11-21 |
| WO2002074015A2 (en) | 2002-09-19 |
| EP1374320A2 (en) | 2004-01-02 |
| KR100916231B1 (ko) | 2009-09-08 |
| KR20030093242A (ko) | 2003-12-06 |
| JP5265840B2 (ja) | 2013-08-14 |
| AU2002306698A1 (en) | 2002-09-24 |
| US7294849B2 (en) | 2007-11-13 |
| JP2004526284A (ja) | 2004-08-26 |
| EP1374320B1 (en) | 2020-05-06 |
| EP1374320A4 (en) | 2007-04-18 |
| US20040155238A1 (en) | 2004-08-12 |
| EP2276084A1 (en) | 2011-01-19 |
| JP2010080979A (ja) | 2010-04-08 |
| CN1535483A (zh) | 2004-10-06 |
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