TW494575B - Semiconductor device and transistor - Google Patents
Semiconductor device and transistor Download PDFInfo
- Publication number
- TW494575B TW494575B TW090103047A TW90103047A TW494575B TW 494575 B TW494575 B TW 494575B TW 090103047 A TW090103047 A TW 090103047A TW 90103047 A TW90103047 A TW 90103047A TW 494575 B TW494575 B TW 494575B
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- transistor
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- semiconductor device
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
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- QDLKYOFKRMDMOG-UHFFFAOYSA-N 4-ethenyl-2,3-dihydro-1H-pyrrole-2-carboxylic acid Chemical compound OC(=O)C1CC(C=C)=CN1 QDLKYOFKRMDMOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000279525A JP3749101B2 (ja) | 2000-09-14 | 2000-09-14 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW494575B true TW494575B (en) | 2002-07-11 |
Family
ID=18764520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090103047A TW494575B (en) | 2000-09-14 | 2001-02-12 | Semiconductor device and transistor |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US6646300B2 (enExample) |
| JP (1) | JP3749101B2 (enExample) |
| KR (1) | KR100724029B1 (enExample) |
| TW (1) | TW494575B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701161A (zh) * | 2019-10-23 | 2021-04-23 | 台湾积体电路制造股份有限公司 | 存储器器件及其形成方法 |
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3955409B2 (ja) * | 1999-03-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| JP3749101B2 (ja) * | 2000-09-14 | 2006-02-22 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6960794B2 (en) * | 2002-12-31 | 2005-11-01 | Matrix Semiconductor, Inc. | Formation of thin channels for TFT devices to ensure low variability of threshold voltages |
| JP2005056452A (ja) * | 2003-08-04 | 2005-03-03 | Hitachi Ltd | メモリ及び半導体装置 |
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| JP4927321B2 (ja) * | 2004-06-22 | 2012-05-09 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP4849817B2 (ja) * | 2005-04-08 | 2012-01-11 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| TWI257646B (en) * | 2005-09-05 | 2006-07-01 | Innolux Display Corp | Thin film transistor array substrate and method of manufacturing the same |
| JP2007081335A (ja) | 2005-09-16 | 2007-03-29 | Renesas Technology Corp | 半導体装置 |
| JP4822791B2 (ja) * | 2005-10-04 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| US7545675B2 (en) * | 2005-12-16 | 2009-06-09 | Sandisk Corporation | Reading non-volatile storage with efficient setup |
| US7369437B2 (en) * | 2005-12-16 | 2008-05-06 | Sandisk Corporation | System for reading non-volatile storage with efficient setup |
| US7349261B2 (en) * | 2006-06-19 | 2008-03-25 | Sandisk Corporation | Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines |
| US7492633B2 (en) * | 2006-06-19 | 2009-02-17 | Sandisk Corporation | System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines |
| US7697365B2 (en) * | 2007-07-13 | 2010-04-13 | Silicon Storage Technology, Inc. | Sub volt flash memory system |
| US8018773B2 (en) * | 2009-03-04 | 2011-09-13 | Silicon Storage Technology, Inc. | Array of non-volatile memory cells including embedded local and global reference cells and system |
| WO2011052351A1 (en) * | 2009-10-29 | 2011-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR20220153647A (ko) * | 2009-10-29 | 2022-11-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011058934A1 (en) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| KR101803254B1 (ko) * | 2009-11-27 | 2017-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101813460B1 (ko) * | 2009-12-18 | 2017-12-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101762316B1 (ko) | 2009-12-28 | 2017-07-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| EP2519969A4 (en) | 2009-12-28 | 2016-07-06 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT |
| WO2011086847A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8780629B2 (en) | 2010-01-15 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| KR101921618B1 (ko) * | 2010-02-05 | 2018-11-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
| KR101822962B1 (ko) | 2010-02-05 | 2018-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR101820776B1 (ko) | 2010-02-19 | 2018-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN102754163B (zh) * | 2010-02-19 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体器件 |
| KR101932909B1 (ko) | 2010-03-04 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 및 반도체 장치 |
| WO2011114919A1 (en) * | 2010-03-19 | 2011-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101884031B1 (ko) | 2010-04-07 | 2018-07-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 기억 장치 |
| WO2012002186A1 (en) | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN103003934B (zh) * | 2010-07-16 | 2015-07-01 | 株式会社半导体能源研究所 | 半导体器件 |
| WO2012008286A1 (en) * | 2010-07-16 | 2012-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR101989392B1 (ko) | 2010-10-20 | 2019-06-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 구동 방법 |
| CN103201831B (zh) * | 2010-11-05 | 2015-08-05 | 株式会社半导体能源研究所 | 半导体装置 |
| US9048142B2 (en) | 2010-12-28 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5973165B2 (ja) | 2010-12-28 | 2016-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102026718B1 (ko) * | 2011-01-14 | 2019-09-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억장치, 반도체 장치, 검출 방법 |
| JP5898527B2 (ja) * | 2011-03-04 | 2016-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8772849B2 (en) * | 2011-03-10 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| JP6023453B2 (ja) * | 2011-04-15 | 2016-11-09 | 株式会社半導体エネルギー研究所 | 記憶装置 |
| JP6250955B2 (ja) | 2012-05-25 | 2017-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置の駆動方法 |
| US9437273B2 (en) | 2012-12-26 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2014195243A (ja) | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US9612795B2 (en) | 2013-03-14 | 2017-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device, data processing method, and computer program |
| JP2015084418A (ja) | 2013-09-23 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6570817B2 (ja) | 2013-09-23 | 2019-09-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9349418B2 (en) | 2013-12-27 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| JP6689062B2 (ja) | 2014-12-10 | 2020-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9773787B2 (en) | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
| US10008502B2 (en) | 2016-05-04 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| US11043260B2 (en) * | 2018-12-26 | 2021-06-22 | Micron Technology, Inc. | Single word line gain cell with complementary read write channel |
| JP7303006B2 (ja) * | 2019-03-29 | 2023-07-04 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
| EP4557370A4 (en) * | 2022-08-10 | 2025-08-27 | Huawei Tech Co Ltd | THREE-DIMENSIONAL STORAGE NETWORK, MEMORY AND ELECTRONIC DEVICE |
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| JP2918307B2 (ja) * | 1990-08-07 | 1999-07-12 | 沖電気工業株式会社 | 半導体記憶素子 |
| JP3075919B2 (ja) * | 1993-10-25 | 2000-08-14 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US5753946A (en) * | 1995-02-22 | 1998-05-19 | Sony Corporation | Ferroelectric memory |
| JPH08316343A (ja) * | 1995-05-17 | 1996-11-29 | Toshiba Corp | 不揮発性半導体記憶装置 |
| KR0161428B1 (ko) * | 1995-08-24 | 1998-12-01 | 김광호 | 비휘발성 반도체 메모리장치 및 그 제조방법 |
| DE19712233C2 (de) * | 1996-03-26 | 2003-12-11 | Lg Philips Lcd Co | Flüssigkristallanzeige und Herstellungsverfahren dafür |
| JP3967440B2 (ja) * | 1997-12-09 | 2007-08-29 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| US6218245B1 (en) * | 1998-11-24 | 2001-04-17 | Advanced Micro Devices, Inc. | Method for fabricating a high-density and high-reliability EEPROM device |
| JP2000279525A (ja) | 1999-03-30 | 2000-10-10 | Koji Horimoto | 狭窄部のアテロームを振動させて削り、吸い出すニューカテーテルバイブレーター針装置及びその製造方法。 |
| JP3749101B2 (ja) * | 2000-09-14 | 2006-02-22 | 株式会社ルネサステクノロジ | 半導体装置 |
-
2000
- 2000-09-14 JP JP2000279525A patent/JP3749101B2/ja not_active Expired - Fee Related
-
2001
- 2001-02-12 TW TW090103047A patent/TW494575B/zh not_active IP Right Cessation
- 2001-03-19 KR KR1020010014064A patent/KR100724029B1/ko not_active Expired - Fee Related
- 2001-03-20 US US09/811,555 patent/US6646300B2/en not_active Expired - Fee Related
-
2003
- 2003-01-08 US US10/338,001 patent/US6825525B2/en not_active Expired - Fee Related
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2004
- 2004-11-12 US US10/985,946 patent/US7009243B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112701161A (zh) * | 2019-10-23 | 2021-04-23 | 台湾积体电路制造股份有限公司 | 存储器器件及其形成方法 |
| CN112701161B (zh) * | 2019-10-23 | 2024-04-09 | 台湾积体电路制造股份有限公司 | 存储器器件及其形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6825525B2 (en) | 2004-11-30 |
| US20030141556A1 (en) | 2003-07-31 |
| US7009243B2 (en) | 2006-03-07 |
| KR100724029B1 (ko) | 2007-06-04 |
| JP2002094029A (ja) | 2002-03-29 |
| US20020096702A1 (en) | 2002-07-25 |
| KR20020021310A (ko) | 2002-03-20 |
| JP3749101B2 (ja) | 2006-02-22 |
| US6646300B2 (en) | 2003-11-11 |
| US20050087797A1 (en) | 2005-04-28 |
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