KR100724029B1 - 반도체 장치 및 트랜지스터 - Google Patents

반도체 장치 및 트랜지스터 Download PDF

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Publication number
KR100724029B1
KR100724029B1 KR1020010014064A KR20010014064A KR100724029B1 KR 100724029 B1 KR100724029 B1 KR 100724029B1 KR 1020010014064 A KR1020010014064 A KR 1020010014064A KR 20010014064 A KR20010014064 A KR 20010014064A KR 100724029 B1 KR100724029 B1 KR 100724029B1
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South Korea
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transistor
region
channel
semiconductor device
source
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Korean (ko)
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KR20020021310A (ko
Inventor
이시이도모유끼
야노가즈오
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가부시키가이샤 히타치세이사쿠쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
KR1020010014064A 2000-09-14 2001-03-19 반도체 장치 및 트랜지스터 Expired - Fee Related KR100724029B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000279525A JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置
JP2000-279525 2000-09-14

Publications (2)

Publication Number Publication Date
KR20020021310A KR20020021310A (ko) 2002-03-20
KR100724029B1 true KR100724029B1 (ko) 2007-06-04

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KR1020010014064A Expired - Fee Related KR100724029B1 (ko) 2000-09-14 2001-03-19 반도체 장치 및 트랜지스터

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Country Link
US (3) US6646300B2 (enExample)
JP (1) JP3749101B2 (enExample)
KR (1) KR100724029B1 (enExample)
TW (1) TW494575B (enExample)

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JP3955409B2 (ja) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3749101B2 (ja) * 2000-09-14 2006-02-22 株式会社ルネサステクノロジ 半導体装置
US6960794B2 (en) * 2002-12-31 2005-11-01 Matrix Semiconductor, Inc. Formation of thin channels for TFT devices to ensure low variability of threshold voltages
JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
JP4398195B2 (ja) * 2003-08-08 2010-01-13 パナソニック株式会社 半導体記憶装置
JP4927321B2 (ja) * 2004-06-22 2012-05-09 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4849817B2 (ja) * 2005-04-08 2012-01-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
TWI257646B (en) * 2005-09-05 2006-07-01 Innolux Display Corp Thin film transistor array substrate and method of manufacturing the same
JP2007081335A (ja) 2005-09-16 2007-03-29 Renesas Technology Corp 半導体装置
JP4822791B2 (ja) * 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7369437B2 (en) * 2005-12-16 2008-05-06 Sandisk Corporation System for reading non-volatile storage with efficient setup
US7545675B2 (en) * 2005-12-16 2009-06-09 Sandisk Corporation Reading non-volatile storage with efficient setup
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7697365B2 (en) * 2007-07-13 2010-04-13 Silicon Storage Technology, Inc. Sub volt flash memory system
US8018773B2 (en) * 2009-03-04 2011-09-13 Silicon Storage Technology, Inc. Array of non-volatile memory cells including embedded local and global reference cells and system
SG179111A1 (en) * 2009-10-29 2012-05-30 Semiconductor Energy Lab Semiconductor device
MY164205A (en) * 2009-10-29 2017-11-30 Semiconductor Energy Lab Semiconductor device
KR101893332B1 (ko) 2009-11-13 2018-08-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2513966B1 (en) * 2009-12-18 2020-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105702631B (zh) 2009-12-28 2019-05-28 株式会社半导体能源研究所 半导体器件
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8780629B2 (en) * 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
WO2011086847A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102725842B (zh) 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101939713B1 (ko) 2010-02-19 2019-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101932909B1 (ko) 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
WO2011114919A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011125432A1 (en) * 2010-04-07 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101859361B1 (ko) * 2010-07-16 2018-05-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103003934B (zh) * 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
WO2012053374A1 (en) 2010-10-20 2012-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for driving semiconductor device
WO2012060202A1 (en) * 2010-11-05 2012-05-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5973165B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9048142B2 (en) * 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102026718B1 (ko) * 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
JP5898527B2 (ja) * 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US8772849B2 (en) * 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
JP2014142986A (ja) 2012-12-26 2014-08-07 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9612795B2 (en) 2013-03-14 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Data processing device, data processing method, and computer program
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
US10008502B2 (en) 2016-05-04 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Memory device
EP3903350A4 (en) * 2018-12-26 2022-08-24 Micron Technology, Inc. Single word line gain cell
JP7303006B2 (ja) * 2019-03-29 2023-07-04 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
DE102020119199B4 (de) * 2019-10-23 2025-10-02 Taiwan Semiconductor Manufacturing Co. Ltd. 3d-ferroelektrikum-speicher
WO2024031438A1 (zh) * 2022-08-10 2024-02-15 华为技术有限公司 一种三维存储阵列、存储器及电子设备

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JPH0499060A (ja) * 1990-08-07 1992-03-31 Oki Electric Ind Co Ltd 半導体記憶素子
JPH07176628A (ja) * 1993-10-25 1995-07-14 Toshiba Corp 半導体記憶装置及びその製造方法
JPH08316343A (ja) * 1995-05-17 1996-11-29 Toshiba Corp 不揮発性半導体記憶装置
KR0161428B1 (ko) * 1995-08-24 1998-12-01 김광호 비휘발성 반도체 메모리장치 및 그 제조방법

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Publication number Priority date Publication date Assignee Title
JPH0499060A (ja) * 1990-08-07 1992-03-31 Oki Electric Ind Co Ltd 半導体記憶素子
JPH07176628A (ja) * 1993-10-25 1995-07-14 Toshiba Corp 半導体記憶装置及びその製造方法
JPH08316343A (ja) * 1995-05-17 1996-11-29 Toshiba Corp 不揮発性半導体記憶装置
KR0161428B1 (ko) * 1995-08-24 1998-12-01 김광호 비휘발성 반도체 메모리장치 및 그 제조방법

Also Published As

Publication number Publication date
US20050087797A1 (en) 2005-04-28
KR20020021310A (ko) 2002-03-20
US7009243B2 (en) 2006-03-07
TW494575B (en) 2002-07-11
JP2002094029A (ja) 2002-03-29
US20030141556A1 (en) 2003-07-31
US6825525B2 (en) 2004-11-30
US6646300B2 (en) 2003-11-11
JP3749101B2 (ja) 2006-02-22
US20020096702A1 (en) 2002-07-25

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