JP3749101B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP3749101B2
JP3749101B2 JP2000279525A JP2000279525A JP3749101B2 JP 3749101 B2 JP3749101 B2 JP 3749101B2 JP 2000279525 A JP2000279525 A JP 2000279525A JP 2000279525 A JP2000279525 A JP 2000279525A JP 3749101 B2 JP3749101 B2 JP 3749101B2
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JP
Japan
Prior art keywords
transistor
region
channel
semiconductor device
source
Prior art date
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Expired - Fee Related
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JP2000279525A
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English (en)
Japanese (ja)
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JP2002094029A5 (enExample
JP2002094029A (ja
Inventor
智之 石井
和男 矢野
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000279525A priority Critical patent/JP3749101B2/ja
Priority to TW090103047A priority patent/TW494575B/zh
Priority to KR1020010014064A priority patent/KR100724029B1/ko
Priority to US09/811,555 priority patent/US6646300B2/en
Publication of JP2002094029A publication Critical patent/JP2002094029A/ja
Priority to US10/338,001 priority patent/US6825525B2/en
Priority to US10/985,946 priority patent/US7009243B2/en
Publication of JP2002094029A5 publication Critical patent/JP2002094029A5/ja
Application granted granted Critical
Publication of JP3749101B2 publication Critical patent/JP3749101B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
JP2000279525A 2000-09-14 2000-09-14 半導体装置 Expired - Fee Related JP3749101B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000279525A JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置
TW090103047A TW494575B (en) 2000-09-14 2001-02-12 Semiconductor device and transistor
KR1020010014064A KR100724029B1 (ko) 2000-09-14 2001-03-19 반도체 장치 및 트랜지스터
US09/811,555 US6646300B2 (en) 2000-09-14 2001-03-20 Semiconductor memory device
US10/338,001 US6825525B2 (en) 2000-09-14 2003-01-08 Semiconductor memory device
US10/985,946 US7009243B2 (en) 2000-09-14 2004-11-12 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000279525A JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004301411A Division JP2005094025A (ja) 2004-10-15 2004-10-15 半導体装置及びトランジスタ

Publications (3)

Publication Number Publication Date
JP2002094029A JP2002094029A (ja) 2002-03-29
JP2002094029A5 JP2002094029A5 (enExample) 2005-02-03
JP3749101B2 true JP3749101B2 (ja) 2006-02-22

Family

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Family Applications (1)

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JP2000279525A Expired - Fee Related JP3749101B2 (ja) 2000-09-14 2000-09-14 半導体装置

Country Status (4)

Country Link
US (3) US6646300B2 (enExample)
JP (1) JP3749101B2 (enExample)
KR (1) KR100724029B1 (enExample)
TW (1) TW494575B (enExample)

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JP3955409B2 (ja) * 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
JP3749101B2 (ja) * 2000-09-14 2006-02-22 株式会社ルネサステクノロジ 半導体装置
US6960794B2 (en) * 2002-12-31 2005-11-01 Matrix Semiconductor, Inc. Formation of thin channels for TFT devices to ensure low variability of threshold voltages
JP2005056452A (ja) * 2003-08-04 2005-03-03 Hitachi Ltd メモリ及び半導体装置
JP4398195B2 (ja) * 2003-08-08 2010-01-13 パナソニック株式会社 半導体記憶装置
JP4927321B2 (ja) * 2004-06-22 2012-05-09 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4849817B2 (ja) * 2005-04-08 2012-01-11 ルネサスエレクトロニクス株式会社 半導体記憶装置
TWI257646B (en) * 2005-09-05 2006-07-01 Innolux Display Corp Thin film transistor array substrate and method of manufacturing the same
JP2007081335A (ja) 2005-09-16 2007-03-29 Renesas Technology Corp 半導体装置
JP4822791B2 (ja) * 2005-10-04 2011-11-24 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7545675B2 (en) * 2005-12-16 2009-06-09 Sandisk Corporation Reading non-volatile storage with efficient setup
US7369437B2 (en) * 2005-12-16 2008-05-06 Sandisk Corporation System for reading non-volatile storage with efficient setup
US7349261B2 (en) * 2006-06-19 2008-03-25 Sandisk Corporation Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7492633B2 (en) * 2006-06-19 2009-02-17 Sandisk Corporation System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines
US7697365B2 (en) * 2007-07-13 2010-04-13 Silicon Storage Technology, Inc. Sub volt flash memory system
US8018773B2 (en) * 2009-03-04 2011-09-13 Silicon Storage Technology, Inc. Array of non-volatile memory cells including embedded local and global reference cells and system
WO2011052351A1 (en) * 2009-10-29 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20220153647A (ko) * 2009-10-29 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011058934A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101803254B1 (ko) * 2009-11-27 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101813460B1 (ko) * 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101762316B1 (ko) 2009-12-28 2017-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2519969A4 (en) 2009-12-28 2016-07-06 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT
WO2011086847A1 (en) * 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101921618B1 (ko) * 2010-02-05 2018-11-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101822962B1 (ko) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101820776B1 (ko) 2010-02-19 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102754163B (zh) * 2010-02-19 2015-11-25 株式会社半导体能源研究所 半导体器件
KR101932909B1 (ko) 2010-03-04 2018-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 메모리 장치 및 반도체 장치
WO2011114919A1 (en) * 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103003934B (zh) * 2010-07-16 2015-07-01 株式会社半导体能源研究所 半导体器件
WO2012008286A1 (en) * 2010-07-16 2012-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101989392B1 (ko) 2010-10-20 2019-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 구동 방법
CN103201831B (zh) * 2010-11-05 2015-08-05 株式会社半导体能源研究所 半导体装置
US9048142B2 (en) 2010-12-28 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5973165B2 (ja) 2010-12-28 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
KR102026718B1 (ko) * 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
JP5898527B2 (ja) * 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US8772849B2 (en) * 2011-03-10 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
JP6023453B2 (ja) * 2011-04-15 2016-11-09 株式会社半導体エネルギー研究所 記憶装置
JP6250955B2 (ja) 2012-05-25 2017-12-20 株式会社半導体エネルギー研究所 半導体装置の駆動方法
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JP2014195243A (ja) 2013-02-28 2014-10-09 Semiconductor Energy Lab Co Ltd 半導体装置
US9612795B2 (en) 2013-03-14 2017-04-04 Semiconductor Energy Laboratory Co., Ltd. Data processing device, data processing method, and computer program
JP2015084418A (ja) 2013-09-23 2015-04-30 株式会社半導体エネルギー研究所 半導体装置
JP6570817B2 (ja) 2013-09-23 2019-09-04 株式会社半導体エネルギー研究所 半導体装置
US9349418B2 (en) 2013-12-27 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving the same
JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
US9773787B2 (en) 2015-11-03 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, memory device, electronic device, or method for driving the semiconductor device
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JP7303006B2 (ja) * 2019-03-29 2023-07-04 ラピスセミコンダクタ株式会社 半導体装置及び半導体装置の製造方法
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Also Published As

Publication number Publication date
US6825525B2 (en) 2004-11-30
US20030141556A1 (en) 2003-07-31
US7009243B2 (en) 2006-03-07
KR100724029B1 (ko) 2007-06-04
JP2002094029A (ja) 2002-03-29
TW494575B (en) 2002-07-11
US20020096702A1 (en) 2002-07-25
KR20020021310A (ko) 2002-03-20
US6646300B2 (en) 2003-11-11
US20050087797A1 (en) 2005-04-28

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