CN1316599C - 半导体集成电路器件的制造方法 - Google Patents
半导体集成电路器件的制造方法 Download PDFInfo
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- CN1316599C CN1316599C CNB021514321A CN02151432A CN1316599C CN 1316599 C CN1316599 C CN 1316599C CN B021514321 A CNB021514321 A CN B021514321A CN 02151432 A CN02151432 A CN 02151432A CN 1316599 C CN1316599 C CN 1316599C
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- dielectric film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 190
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 112
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 35
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims description 44
- 230000007797 corrosion Effects 0.000 claims description 31
- 238000005260 corrosion Methods 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 abstract description 24
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 54
- 239000011229 interlayer Substances 0.000 description 22
- 238000002955 isolation Methods 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 208000005189 Embolism Diseases 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 150000002500 ions Chemical group 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- -1 boron ion Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
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- H10B12/05—Making the transistor
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- Condensed Matter Physics & Semiconductors (AREA)
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- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
I/O区 | 逻辑区 | 存储区 | 电容元件 | |
Vcc | 1.5V | 0.85V | 0.85V | 0.85V |
Vth | 高(0.4V) | 低(0.1V) | 高(0.4V) | --- |
栅极绝缘膜 | 高k/SiO | 高k | 高k | 高k |
硅化物层 | 包括 | 包括 | 不包括 | 包括 |
SAC绝缘膜 | SiN(可选) | SiN(可选) | SiN或高k | SiN(可选) |
接触孔的形状 | 圆形 | 圆形 | 圆形或槽形 | 圆形 |
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP355053/2001 | 2001-11-20 | ||
JP2001355053A JP2003158195A (ja) | 2001-11-20 | 2001-11-20 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1420546A CN1420546A (zh) | 2003-05-28 |
CN1316599C true CN1316599C (zh) | 2007-05-16 |
Family
ID=19166812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021514321A Expired - Fee Related CN1316599C (zh) | 2001-11-20 | 2002-11-19 | 半导体集成电路器件的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6924237B2 (zh) |
JP (1) | JP2003158195A (zh) |
KR (1) | KR20030043666A (zh) |
CN (1) | CN1316599C (zh) |
TW (1) | TWI261894B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003158195A (ja) * | 2001-11-20 | 2003-05-30 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPWO2004017418A1 (ja) | 2002-08-15 | 2005-12-08 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
JP2004363234A (ja) * | 2003-06-03 | 2004-12-24 | Renesas Technology Corp | 半導体装置の製造方法 |
US7612416B2 (en) * | 2003-10-09 | 2009-11-03 | Nec Corporation | Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same |
US7282409B2 (en) * | 2004-06-23 | 2007-10-16 | Micron Technology, Inc. | Isolation structure for a memory cell using Al2O3 dielectric |
JP4693428B2 (ja) * | 2005-01-27 | 2011-06-01 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
JP4340248B2 (ja) * | 2005-03-17 | 2009-10-07 | 富士通マイクロエレクトロニクス株式会社 | 半導体撮像装置を製造する方法 |
JP4738178B2 (ja) * | 2005-06-17 | 2011-08-03 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7586158B2 (en) * | 2005-07-07 | 2009-09-08 | Infineon Technologies Ag | Piezoelectric stress liner for bulk and SOI |
US7718496B2 (en) | 2007-10-30 | 2010-05-18 | International Business Machines Corporation | Techniques for enabling multiple Vt devices using high-K metal gate stacks |
JP2010021295A (ja) * | 2008-07-09 | 2010-01-28 | Nec Electronics Corp | 半導体装置およびその製造方法 |
KR101612657B1 (ko) | 2011-12-22 | 2016-04-14 | 인텔 코포레이션 | 게이트 정렬 컨택트를 포함하는 반도체 구조 및 그 제조 방법 |
DE102018102685A1 (de) * | 2017-11-30 | 2019-06-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Kontaktbildungsverfahren und zugehörige Struktur |
CN109037342A (zh) * | 2018-08-29 | 2018-12-18 | 广东工业大学 | 一种晶体管、堆叠晶体管及射频开关芯片 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1155160A (zh) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | 制备自对准硅化物结构半导体器件的方法 |
CN1264166A (zh) * | 1999-01-25 | 2000-08-23 | 国际商业机器公司 | 浅结半导体器件的制造 |
CN1060588C (zh) * | 1995-10-31 | 2001-01-10 | 日本电气株式会社 | 制造半导体器件的方法 |
US6210999B1 (en) * | 1998-12-04 | 2001-04-03 | Advanced Micro Devices, Inc. | Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3683972B2 (ja) * | 1995-03-22 | 2005-08-17 | 三菱電機株式会社 | 半導体装置 |
JP3205306B2 (ja) * | 1998-12-08 | 2001-09-04 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3023355B1 (ja) * | 1998-12-25 | 2000-03-21 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
JP2000332210A (ja) * | 1999-05-24 | 2000-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US6159782A (en) * | 1999-08-05 | 2000-12-12 | Advanced Micro Devices, Inc. | Fabrication of field effect transistors having dual gates with gate dielectrics of high dielectric constant |
US6380589B1 (en) * | 2001-01-30 | 2002-04-30 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator (SOI) tunneling junction transistor SRAM cell |
JP2003158195A (ja) * | 2001-11-20 | 2003-05-30 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
-
2001
- 2001-11-20 JP JP2001355053A patent/JP2003158195A/ja active Pending
-
2002
- 2002-10-28 US US10/281,189 patent/US6924237B2/en not_active Expired - Lifetime
- 2002-10-29 TW TW091132067A patent/TWI261894B/zh active
- 2002-11-18 KR KR1020020071512A patent/KR20030043666A/ko not_active Application Discontinuation
- 2002-11-19 CN CNB021514321A patent/CN1316599C/zh not_active Expired - Fee Related
-
2005
- 2005-04-22 US US11/111,890 patent/US20050186724A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1155160A (zh) * | 1995-09-28 | 1997-07-23 | 日本电气株式会社 | 制备自对准硅化物结构半导体器件的方法 |
CN1060588C (zh) * | 1995-10-31 | 2001-01-10 | 日本电气株式会社 | 制造半导体器件的方法 |
US6210999B1 (en) * | 1998-12-04 | 2001-04-03 | Advanced Micro Devices, Inc. | Method and test structure for low-temperature integration of high dielectric constant gate dielectrics into self-aligned semiconductor devices |
CN1264166A (zh) * | 1999-01-25 | 2000-08-23 | 国际商业机器公司 | 浅结半导体器件的制造 |
Also Published As
Publication number | Publication date |
---|---|
TW200307342A (en) | 2003-12-01 |
CN1420546A (zh) | 2003-05-28 |
US20050186724A1 (en) | 2005-08-25 |
JP2003158195A (ja) | 2003-05-30 |
US20030096501A1 (en) | 2003-05-22 |
KR20030043666A (ko) | 2003-06-02 |
US6924237B2 (en) | 2005-08-02 |
TWI261894B (en) | 2006-09-11 |
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