TW466715B - Semiconductor chip device and its packaging method - Google Patents

Semiconductor chip device and its packaging method Download PDF

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Publication number
TW466715B
TW466715B TW89100578A01A TW466715B TW 466715 B TW466715 B TW 466715B TW 89100578A01 A TW89100578A01 A TW 89100578A01A TW 466715 B TW466715 B TW 466715B
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Taiwan
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semiconductor wafer
scope
conductive metal
conductive
item
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English (en)
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I-Ming Chen
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I-Ming Chen
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封裝方法追 專利申請案 加—本發明係有關於一種半導體晶片裝置及其 二’=特別地，係有關於第891〇〇578號 之追加案者。 半導俨ί #案主要係鑑於晶片《表面上的銲墊隨著 會：ΐί發展而會變得越來越小，且銲墊間的距離亦 ς縮小，以致於在與外部電路電氣連接時變得非常不 妨’而影響生產良率，甚至影響半導體製程繼續的發展 方^本案發明人即研發出母案『半導體晶片裝置及其^裝 安丁』。如今，本案發明人就封裝方法的製程，提出與母 案不同之其他可行的方式。 、 '有，於此，本案發明人遂以其從事該行業之多年經驗 丄，本著精益求精之精神，積極研究改良，遂有本發明『 半導體晶片裝置及其封裝方法追加一』產生。 本發明之目的是為提供一種半導體晶片裝置及Α 方法追加一。 j π '根據本發明之一特徵，一種半導體晶片裝置的封裝方 法追加一係被提供。該半導體晶片裝置係適於安裝在一具 有數個銲點的基板上，該方法包含如下之步驟：提供—^ 導體晶片，該半導體晶片具有一銲墊安裝表面及數個設於 該~塾女裝表面的銲墊，該等銲誓的位置係不對應於該基 板之銲點的位置；提供一鋼模，該鋼模在其之一表面上之 預定的位置係形成有數個導電體容置凹坑；以導電金屬勝 為材料’於該等導電體容置凹坑形成導電體；及利用一移 刷膠頭把形成於該等導電體容置凹坑内的導電體移至該半
第4頁 五、發明說明（2) 導體晶片的銲墊安裝表面， 晶片之對應之銲塾延伸出來 於該延伸部之自由端且其之 之位置對應之作為導電觸點 根據本發明的另一特徵 係被提供。該半導體晶片裝 點的基板上，該半導體晶片 半導體晶片具有一銲墊安裝 面的銲墊，該等銲墊的位置 置；及數個導電體，各導電 應之銲墊延伸出來作為電路 部之自由端且其之位置係與 應之作為導電觸點的電氣連 有關本發明為達上述目 其功效，茲例舉較佳實施例 第一圖係本發明第一較 半導體晶片的示意剖視圖； 第二圖係在本發明第一 示意頂視圖； 各導電體係具有一從該半導體 作為電路軌跡的延伸部和—位 位置係與該基板之對應之銲點 的電氣連接部。 ’一種半導體晶片裝置追加— 置係適於安裝在一具有數個銲 裝置包含：一半導體晶片，該 表面及數個設於該銲墊安裝表 係不對應於該基板之銲點的位 體具有一從該半導體晶片之對 軌跡的延伸部和一位於該延伸 該基板之對應之鮮點之位置對 接部。 的、特徵所採用的技術手段及 並配合圖式說明如下： 佳實施例之半導體晶片裝置之 較佳實施例中所使用之鋼模的 第二圖係第二圖之鋼模的示意剖視圖； 第四至五圖係用以說明在本發明第一較佳實施例中係 如何將f電體從鋼模移印至半導體晶片的*意剖視圖；、 圖係描繪本發明第一較佳實施例之半導體晶片裝 置女裝於一基板上的示意剖視圖；
第5頁 6 7 7 5 五、發明說明（3) 第七至八圖係描繪本發明第二較佳實施例之半導體晶 片裝，之部份封裝流程的示意剖視圖； +第九圖係描繪本發明第二較佳實施例之半導體晶片裝 置安裝於一基板上的示意剖視圖； _ 第十圖係本發明第三較佳實施例之半導體晶片裝置的 示意剖視圖；及 、 第十一圖係描繪在本發明之較佳實施例中所使用之半 導體晶片的示意頂視圖。 元件標號對照表 1 半導體晶片 10 銲墊安裝表面 11 銲墊 2 鋼模 20 導電體容置凹坑 3 導電體 300 延伸部 301 電氣連接部 91 導電銀膠 5 鋼板 9 基板 90 銲點 50 貫孔 7 保護層 6 第二鋼板 60 貫孔 302 隆起部 303 銅球 4 移印膠頭 8 保護牆 在本發明被詳細描述之前，應要注意的是在整個說明 當中’相同的元件係由相同的標號標示。 本發明之半導體晶片裝置係適於安裝至一基板9 (見 第六圖）上。該基板9具有一晶片安裝區域。於該晶片安 裝區域内係設有數個銲點9 〇。在本實施例十，該基板9是
第6頁 466715 五、發明說明（4) 一 為一系統基板" μ Ϊ —至六圖顯示本發明半導體晶片裝置之封裝方法的 較佳實施例。在第一圖中，一主道縣a y， ,1 a- . m τ +導體日日片1係被顯示具有 於安裝銲墊11的銲墊安裝表面10 ^該等銲墊丨1的位置 係不對應於該基板9之銲點9 〇的位置。 d後’如第—和二圖所顯示般’—鋼模2係被提供。 該鋼模2在其之一表面上之預定的位置係形成有數個導電 體容置凹坑20。 之後，如第四圖所顯示般，係以導電金屬膠為材料， 於該等導電體容置凹坑2〇形成導電體3 。然後，係利用一 移刷膠頭4把形成於該等導電體容置凹坑2〇内的導電體3 移離。由於移刷膠頭4如何把導電體3從鋼模2移去是為 習知的，於此恕不再贅述。 應要注意的是，該導電金屬膠可以是為摻雜有金、銀 、銅、鐵、錫和鋁等導電金屬材料中之一種的導電金屬膠 0 如在第五圖中所顯示般，一鋼板5係被置於該晶片1 上。該鋼板5具有與該鋼模2之凹坑2〇對應的貫孔5〇。然 後，帶有該等導電體3的該移刷膠頭4係施壓於該鋼板5 上，俾可將該等導電體3轉移至該晶片1的銲墊安裝表面 1 0上。應要注意的是，該鋼板5的設置係可防止該等導電 體3被過度擠壓而擴張變形。在本實施例中，該導電金屬 移是為摻雜有銀的導電銀膠。然而，應要了解的是，該導 電金屬膠也可以疋為播雜有如金、銅、鐵、链、踢與錯等
466715 五、發明說明（5) 導電金屬的導電金屬膠。各導電體3係具有一從對應之銲 墊11延伸出來作為電路轨跡的延伸部3 〇 〇和一位於該延伸 部3 0 0之自由端且其之位置係與該基板9之對應之銲點9〇 之位置對應之作為導電觸點的電氣連接部3 〇 1 。之後，經 由加熱烤乾處理使該等導電體3帶硬性。 請參閱第六圖所示，當本發明之半導體晶片裝置如上 所述製成時，其係適於安裝至一基板9上。該等導電體3 之電氣連接部301係透過在該基板9之銲點9〇上之預先設 置的導電銀膠9 1來與該基板9之對應的銲點9 〇電氣連接。 最後，在該晶片1的銲墊安裝表面1〇上係以樹脂為材料設 有一保護層7 。應要注意的是，在安裝該半導體晶片裝置 ^該基板9的過程在該基板9與該晶片】之間係可設 用於在導電銀膠9 1被加熱硬化之前防止該基板9盥該 晶片1之間之相對移動的黏膠層（圖中未示）。 ’、 =要注意的是’在該基板9之銲點9〇和該晶片之對應 ίί!之電氣連接部301之間的電氣連接亦可以透過 =閱第七至九圖所示，係為本發明第二較佳實施例 由：本較佳實施例在導體電3 $成為 ，例相同’故於此不再贊述。在第七圖中，一第二 ΪΞίϊ雷；第二鋼板6係置於該晶片…且係形成有 升）成各言體3之電乳連接部3〇1對應的貫孔60以致於在 :成：貫：6。之周壁與該導電體3之電氣連接部3〇1之間 料成-隆起部形成"卜然後，係同樣以導電金屬膠為
第8頁 五、發明說明（6) 材料’利用印刷手段於各隆起部形成空間形成一隆起部 302 。由於該等隆起部302與該等導電體3皆係以相同的 材料形成’故兩者會溶合在—起。在該鋼板6被移去後， 係經由加熱烤乾處理使該等導電體3帶硬性。 然後’如第八圖所示，在該晶片1的銲墊安裝表面1 〇 上係以樹脂為材料設有一保護層7 。應要注意的是，各導 電體3之隆起部3〇2的頂端部份係凸露在該保護層7外。 *月參閱第九圖所示’當本發明之半導體晶片裝置如上 所述製成時，其係適於安裝至一基板9上。該等電氣連接 部隆起部3 0 2係透過在該基板9之銲點9 〇上之預先設置的 導電銀膠91來與該基板9之對應的銲點9〇電氣連接。應要 注意的是，與第一較佳實施例相同，在安裝該半導體晶片 裝置至該基板9的過程t，在該基板9與該晶片丨之間係 可設有一用於在導電銀膠91被加熱硬化之前防止該基板9 與該晶片1之間之相對移動的黏膠層（圖中未示）。 與第一較佳實施例相同，在該基板9之銲點9〇和該晶 片之對應之導電體3之隆起部3〇2之間的電氣連接亦可以 透過錫膏達成。 月參閱第十圖所示，係為本發明之第三較佳實施例。 :第-較佳實施例不同的是，在各導電體3經過加熱硬化 處理之前，於各導電體3之電氣連接部3〇1係設置有一導 電金屬球303。在本實施例中’該導電金屬球3〇3可以是 為以=金、銀、錫和鋁般之導電金屬電鍍的銅球。 當本發明之第三較佳實施例之半導體晶片裝置被安裝
第9頁 —.一 五、發明說明（7) 至一基板時’該等銅球3 0 3係如上述之實施例透過在該基 板之銲點上之預先設置的導電銀膠或錫膏來與該基板之對 應的銲點電氣連接。 請參閱第十一圖所不’在本發明之以上所述的較佳實 施例中’當把導電體3移印至半導體晶片1之銲墊安裝表 面10時’為了防止在兩銲塾11之間因距離太短而發生短路 現象，於該半導體晶片1之兩相鄰之銲墊11之間係可以以 樹脂為材料形成一保護牆8 。 綜上所述，本發明之『半導體晶片裝置及其封裝方法 』’確藉上述所揭露之構造、裝置，達到預期之 輿功域，且Φ諸益土目·ίΛ 追加 』 ％此1稚工逖所揭路之構造、裝置，達到預期之 目的與功效，且申請前未見於刊物亦未公開使用，符合 明專利之新穎、進步等要件。 惟，上述所揭之圖式及說明，僅Α 已’非為限定本發明之實施例；大凡熟 鈿例而 ’其所依本發明之特徵範，，所作之复：=藝之人仕 ’皆應涵蓋在以下本案之巾請專利範圍内4政變化或修飾
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Claims (1)

  1. f: c 71 5 六 、申請專刺範圍 ' 種半導體晶片裝置的封裝方法追加―，該 裝置係適於安裝在一具有數個銲點的基板上， = 含如下之步驟： 涊万法包 提供-半導體晶片’該半導體晶片具有一 表面及數個設於該銲墊安裝表面的銲墊，該裝 置係不對應於該基板之銲點的位置； 叶的位 提供一鋼模，該鋼模在其之—表面上之 係形成有數個導電體容置凹坑； 疋的位置 以導電金屬膠為材料，於該等導 導電體：卩 守电體谷置凹坑形成 利用一移席膠頭把形成於該導電體容 電體移至該半導體晶片的銲墊安t表面，=杌内的導 有一從該半導體晶片之對應之銲墊延伸 2電體係異 跡的延伸部和—位於該延伸部之自由端且 為電路執 ^-·- 之位置係與 該基板之對應之錄¥处丄& 、 〜又知點之位置對應之作為導I 連接部。 电 觸點的 電氣 2„利範圍第1項所述之半導體晶片裝署 2加一 ’其中，在提供該半導體晶的封较方成為材料於該半導體晶片之兩相鄰4之以 = η 導體“： 雷俨孩在形成於該導電體容置凹：裝方 L體：下至：：驟導體晶片之鲜塾安裝表面的步，内之導 之前 更 六、申請專利範圍 ---- 提仏可防止該等導電體被過度擠壓而擴張變形的 該半導體晶片上，該鋼板具有與該鋼模之凹坑對 二兮-=〔以致於帶有該等導電體的該移刷膠頭可施壓 於忒鋼板上，俾將該等導電體轉移至 墊安裝表面上。 ^牛導體日日片的鋅 4 如申請專利範圍第丨^ ^ W“一 Γ : 述+導體晶片裝置的封裝方 Ϊί ί;Ϊ:欠在導電體轉移至該半導體晶片的步驟 電觸點之導電金屬球的步，驟。 ^又置作為該導 5. 如申請專利範圍第4㉟所述之半 法追加-，其中，在 =裝置的封裝方 電金屬球是為電鑛有金：iff:步驟中，該等導 之一種的銅球。 、 、呂荨導電金屬材料中 6. =專利範圍第4項所述之半導 :追加-’其中’在形成導電金屬球的步=封裝方 含以樹脂為材料於該半導體晶片之銲塾:更包 :;護層的步驟’該等導電金屬球之至文形成 露在該保護層外。 ^頂糕部份係凸 專利範圍第i項所述之半導體晶^置 脒叮且’其中’在形成導電體的步驟令，9導翁^ 膠可以是為摻雜有金、銀 ：：’ 5玄導電金屬 材料中之-種的導電金屬膠'。 °銘等導電金屬 法追加一，其中，在導雪 η哀置的封裝方 在導電體轉移至該半導體晶片的步称
    第12頁 8·=專利，第！項所述之半導 4 6 6 7 15 六、申請專利範圍 " ' 之後’更包含如下之步驟： 提供一第二鋼板於該半導體晶片上，該第二鋼板係 形成有與該等導電體之電氣連接部對應的貫孔以致於在 形成各貫孔之周壁與該導電體之電氣連接部之間係形 一隆起部形成空間；及 v 以導電金屬膠為材料，利用印刷手段於各隆起部形 成空間形成一作為該導電觸點的隆起部。 / 9. 如申請專利範圍第8項所述之半導體晶片裝置的封裝方 法追加一，其中，在各隆起部形成空間形成隆起部的步 驟之後’更包含在該半導體晶片之銲墊安裝表面上以樹 脂為材料形成一保護層的步驟，各導電體之隆起部的至 少頂端部份係凸露在該保護層外。 10. —種半導體晶片裝置追加一’其係適於安裝在一具有 數個銲點的基板上，該半導體晶片裝置包含： 一半導體晶片，該半導體晶片具有一銲墊安裝表 面及數個設於該銲墊安裝表面的銲墊，該等銲墊的位 置係不對應於該基板之銲點的位置；及 數個導電體，各導電體具有一從該半導體晶片之 對應之銲墊延伸出來作為電路軌跡的延伸部和一位於 該延伸部之自由端且其之位置係與該基板之對應之銲 點之位置對應之作為導電觸點的電氣連接部。 11 如申請專利範圍第1 0項所述之半導體晶片裝置追加— ’其中’在該半導體晶片之兩相鄰銲墊之間係形成一 防止該兩相鄰銲墊之間之短路的保護牆。
    第丨3頁 六、申請專利範圍 1 2.如申請專利範圍第1 1項所述之半導體晶片裝置追加一 ，其中，該保護牆是由樹脂材料製成。 1 3.如申請專利範圍第1 0項所述之半導體晶片裝置追加一 ，更包含數個導電金屬球，該等導電金屬球係設置於 對應之導電體的電氣連接部上以作為該導電觸點。 1 4.如申請專利範圍第1 3項所述之半導體晶片裝置追加一 ，其中，該等導電金屬球是為電鍍有金、銀、錫和鋁 等導電金屬材料中之一種的銅球。 1 5.如申請專利範圍第1 3項所述之半導體晶片裝置追加一 ，其中，於該半導體晶片之銲墊安裝表面上更形成有 一保護層，該等導電金屬球之至少頂端部份係凸露在 該保護層外。 1 6.如申請專利範圍第1 5項所述之半導體晶片裝置追加一 ，其中，該保護層係由樹脂材料製成。 1 7.如申請專利範圍第1 0項所述之半導體晶片裝置追加一 ，其中，該導電金屬膠可以是為摻雜有金、銀、銅、 鐵、錫和鋁等導電金屬材料中之一種的導電金屬膠。 1 8.如申請專利範圍第1 0項所述之半導體晶片裝置追加一 ，其中，在各導電體之電氣連接部上係以導電金屬膠 為材料形成有一作為該導電觸點的隆起部。 1 9.如申請專利範圍第1 8項所述之半導體晶片裝置追加一 ，其中，在該半導體晶片之銲墊安裝表面上係形成有 一保護層，各導電體之隆起部的至少頂端部份係凸露 在該保護層外。
    第14頁
    第15頁
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