TW503534B - Semiconductor chip device and the packaging method thereof - Google Patents

Semiconductor chip device and the packaging method thereof Download PDF

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Publication number
TW503534B
TW503534B TW89100578A04A TW503534B TW 503534 B TW503534 B TW 503534B TW 89100578A04 A TW89100578A04 A TW 89100578A04A TW 503534 B TW503534 B TW 503534B
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Taiwan
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circuit
wafer
pad
semiconductor
substrate
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English (en)
Inventor
I-Ming Chen
Original Assignee
Shen Yu Nung
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Publication of TW503534B publication Critical patent/TW503534B/zh

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    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

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五、發明說明(1) 本發明係有關於一種半導體晶片 加四,更特別地,係有關於第89 1 0 0 二】裝方法追 之追加案者。 、弟Mi u叻78唬發明專利申請案 前揭本案之母案主要係 半導體製鋥的鉻S & a ^ 片表面上的銲墊隨著 衣程的發展而會變得越來越小,且銲墊 玲越姐縮小,以致於在與外曰 /、 易,進而影塑在甚*杳j丨电塔I轧連接日守變得非常不 ,故本岽:二甚i影響㈣體製程繼續的發展 方法』。如今,太㈣$ m片裝置及其封裝 可行的方式 务明人進-步提出與母案不同之其他 ,並::此丄本案發明人遂以其從事該行業之多年經驗 半積極研究改良,遂有本發明『 =日片咸置及其封裝方法追加四』產生。 方法目的是為提供一種半導體晶片裝置及其封裝 根據本發明夕 ..... 法追加四係被導片裝置之封裝* 部電路元侔F Μ半蛉體晒片裝置係適於安裝至一外 該晶片*裝區域卜部電路元件具有-晶片φ裝區域,於 之步驟:提供ί丰=设有數個連接觸點,該方法包含如下 數個銲墊的銲墊 f晶凡,該半導體晶元具有一設置有 外部電路元件之ϊίί面,該等銲墊的位置係不對應於該 元的銲墊下,安ί觸點的位置;在沒有覆蓋該半導體晶 墊安裝表面上,^ ^少一片電路基板於該半導體晶元的銲 '路基板具有一設置有預定之電路軌跡
503534 五、發明說明(2) 的電路佈設表 路基板之對應 該半導體晶元 板;置放一光 行曝光 份的不 線重疊 透光部 之電路 應於該 形成一 電路執 根 被提供 上,該 區域内 ,該半 該等銲 位置; 導體晶 ,該電 面;用 路軌跡 龄 主 J7, 衣衣_ 處理, 透光部 :在移 份覆蓋 執跡之 外部電 導電觸 跡來與 據本發 ,該半 外部電 係設有 導體晶 墊的位 至少一 元的銲 路基板 於把該 電氣連 上以覆 面;利用導線把該半導體 的電路軌跡電氣連接;形 的銲墊安裝表面上以覆蓋 罩於該感光薄膜層上並且 該光罩具有對應於電路基 份,以致於該光罩的不透 去光罩之後,把感光薄膜 的部份沖洗去除,以形成 部份曝露的曝露孔,該等 路元件之連接觸點的位置 點,該等導電觸點係經由 對應的導線電氣連接。 明的另一特徵,一種半導 導體晶片裝置係適於安裝 路元件具有一晶片安裝區 數個連接觸點,該裝置包 元具有一設置有數個銲墊 置係不對應於該外部電路 片電路基板,該電路基板 墊下安裝於該半導體晶元 具有一設置有預定之電路 半導體晶元之銲墊與該電 接的導線;被形成於該半 蓋該等導線和電路基板的 晶元的 成一感 該等導 對該感 板之電 光部份 層之由 將電路 曝露孔 :及於 電路基 體晶片 至一外域,於 含:一 的銲墊 元件之 係在沒 的銲墊 軌跡的 路基板 導體晶 感光薄 辞墊與該電 光薄膜層於 線和電路基 光缚膜層進 路軌跡之部 並不會與導 該光罩之不 基板之對應 的位置係對 每一曝露孔 板之對應的 裝置追加四 部電路元件 该晶片安裝 半導體晶元 安裝表面, 連接觸點的 有覆蓋該半 安裝表面上 電路佈設表 之對應之電 元之銲墊安 膜層,該感 五、發明說明(3) 成有用以曝露該電路基板之對庫之電77~ 口丨物的曝露孔,該等 对應之電路軌跡之 件之連接觸點的位置及形威 j對應於該外部電路元 該等導電觸點係經由電‘ j ==曝露孔的導電觸點, 的導線電氣連接。 基板之對應的電路執跡來與對應 有關本發明為達上述目、^ 其功茲例舉?佳實施例並配===術手段及 晶片裝置i ί ί; 本發明第-較佳實施例之半導體 裝方法之流程的示意剖視圖; 圖疋為描繪本發明第一 電氣連接的示意剖視圖; 住貝施例與外邓電路 •,及圖疋為描繪本發明第二較佳實施例的示意頂視圖 。第七圖疋為描繪本發明第三較佳實施例的示意剖視圖 晶元 銲墊 電路軌跡佈設表面 導線 曝露孔 不透光部份 3外部電路元件 在本發明被詳細描述之前 1120223040 元件標號對照表 10 銲墊安裝表面 221 90 電路基板 軌跡 感光薄膜層 光罩 導電觸點 連接觸點 應要注意的是,在整個說明當
後曰曰 方式,利 對應的電 圖所示, 面1 0上以 係被置放 基板2之 罩4的不 感光薄膜 該光罩4 五、發明說明(4) 中,相同的元件係由相同的 件9 t發明 < 半導體晶片裝 ^ 上(見第五圖所示)。 女裝區域。於讀冰 M 4m ^ x …哀外4電路元 數個連接觸點9 0。 ,參閱第一和二圖所示 而:、導體晶元1具有-設 面1 0。在本實施例中 表面10的中央部份排列2 接著,於該等銲墊u的 各電路基板2具有—設 表面2 0 〇 然後,係以習知的打線 的銲墊11與該電路基板2之 、之後,請配合參閱第三 成於該晶元1的銲墊安裝表 路基板2 。接著,一光罩f 。該光罩4具有對應於電路 不透光部份40 ’以致於該光 導線22重疊。然後,係對該 致於該感光薄膜層3之未被 的部份會硬化。 標號標示。 置係適於安裝至一外部電路元 該外部電路元件9具有一晶片 件9的晶片安裝區域内係設有 ’ 一半導體晶元1首先被提供 置有數個銲墊U的銲墊安裝表 元1的銲墊11係在該銲墊安裝 排。 兩,係設置有一電路基板2 。 預定之電路執跡21的電路佈設 用導線22把該晶元1 路軌跡21電氣連接。 一感光薄膜層3係形 覆盡該等導線2 2和電 於該感光薄膜層3上 電路軌跡21之部份的 透光部份40並不會與 層3進行曝光處理以 之不透光部份40覆蓋 層3 請配合參閱第 之由該光罩之 四圖所示,在移去# 不透#邮於罗# 後’感光薄港 透光。P伤覆盖的部份係僅被沖洗去畴
503534 的是, 一方面 基板2 銲墊11 在一高 為描繪 視圖。 係沿著 銲墊安 為描繪 視圖。 係在該 路基板2之對應之電路軌跡2丨曝露的曝露孔 母一曝露孔3 0形成一導電觸點5 。該等導電 電路基板2之對應的電路軌跡21來與對應的 接。 五圖所示,當本發明之半導體晶片裝置如上 其係適於安裝至一外部電路元件9上。該等 與该外部電路元件9之對應的連接觸點9 〇電
該感光 ,相鄰 之電路 間之距 水準。 本發明 與第一 其之邊 裝表面 本發明 與第_ 鲜塾安L 五、發明說明(5) ,以形成將電 30。然後,於 觸點5係經由 導線22電氣連 請參閱第 所述製成時, 導電觸點5係 氣連接。 應要注意 的功能。另 亦可藉由電路 化,以致於在 保持生產良率 第六圖是 裝置的示意頂 元1的銲墊11 於該晶元1之 第七圖是 裝置的示意剖 元1的銲墊11 排0 薄膜層3具有 之導電觸點5 軌跡21的設計 離越益縮小的 第二較佳實施 車父佳貫施例不 緣排列,且電 的中央部份。 第三較佳實施 較佳實施例不 裝表面1 0的中 固定及保護導線 之間的相對位置 來作更彈性的變 情況下,依然能 例之半導體晶片 同,該半導體晶 路基板2係置放 例之半導體晶片 同,該半導體晶 央部份排列成兩 # 半導體晶片裝置及其封裝方、去 揭露之構造、裝置,達到預期》之 見於刊物亦未公開使用,符合發
綜上所述,本發明之 追加四』,確能藉上述所 目的與功效,且申請前未 503534 五、發明說明(6) 明專利之新穎、進步等要件。 惟,上述所揭之圖式及說明,僅為本發明之實施例而 已,非為限定本發明之實施例;大凡熟悉該項技藝之人仕 ,其所依本發明之特徵範疇,所作之其他等效變化或修飾 ,皆應涵蓋在以下本案之申請專利範圍内。 _
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Claims (1)

  1. 川3534
    心々口四,該半導體晶片 件上,該外部電路元件 安裝區域内係設有數個 驟: 體晶元具有一設置有數 墊的位置係不對應於該 一種半導體晶片裝置之封 裝置係適於安裝至一外部 晶片安 具有' 連接觸 提 個銲墊 外部電 在 電路基 板具有 利 應的電 點,該 供一半 的銲墊 路元件 沒有覆 板於該 一設置 用導線 路軌跡 裝區域,於 方法包含如 導體晶元, 安裝表面, 之連接觸點 蓋該半導體 半導體晶元 有預定之電 把該半導體 電氣連接; 裝方法 電路元 該晶片 下之步 該半導 該等銲 的位置 晶元的 的銲墊 路軌跡 晶元的 銲墊下,安裝至少一片 安裝表面上,該電路基 的電路佈設表面; 銲墊與該電路基板之對 形成一感光薄膜層於該半導 上以覆蓋該等導線和電路基板, 進行罩:該感光薄膜層上並且對該感光薄膜層 之部份的^丄δ"光罩具有對應於電路基板之電路軌跡 會與導線重ί卩份,以致於該光罩的不透光部份並不 在移去# w 光部份覆叢ί Γ後,把感光薄膜層之由該光罩之不透 之電路執跡之2份沖洗去除,以形成將電路基板之對應 對應於該外却ί份曝露的曝露孔,該等曝露孔的位置係 於每—°卩電路元件之連接觸點的位置;及 由電路基板之路孔形成一導電觸點,該等導電觸點係經 土 對應的電路軌跡來與對應的導線電氣連接
    第10頁 封裝方法 的銲墊係 在安竣電 一該電路 封裝方法 的銲墊係 在安裝電 一該電路 封裝方法 的銲墊係 中,該電 部份。 該半導體 外部電路 内係設有 晶元具有 的位置係 路基板係 導體晶元 預定之電 503534 六、申請專利範圍 〇 2 ·如申請專利範圍第1項所述之 在提供晶元的步驟中,該晶元 面的中央部份排列成一排,及 ,係於該等銲墊的兩側設置有 3 ·如申請專利範圍第丄項所述之 在提供晶元的步驟中,該晶元 面的中央部份排列成兩排,及 ,係於該等銲墊的兩侧設置有 4 ·如申請專利範圍第1項所述之 在提供晶元的步驟中,該晶元 列’及在安裝電路基板的步驟 該晶元之銲墊安裝表面的中央 5.二種半導體晶片裝置追加四, =裝至一外部電路元件上,該 安裝區域,於該晶片安裝區域 該裝置包含: 一半導體晶元,該半導體 ^的銲墊安裝表面,該等銲墊 電路7L件之連接觸點的位置; 至少一片電路基板,該電 ^體晶疋的銲墊下安裝於該半 ,該電路基板具有一設置有 设表面; 追力口四, 在該鮮塾 路基板的 基板。 追力口四, 在該銲墊 路基板的 基板。 追加四, 沿著其之 路基板係 其中, 安裝表 步驟中 其中, 安裝表 步驟中 其中, 邊緣排 置放於 晶片裝置係適於 元件具有一晶片 數個連接觸點, 一設置有數個銲 不對應於該外部 在沒有覆蓋該半 的銲墊安裝表面 路軌跡的電路稀
    第11頁
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6707159B1 (en) * 1999-02-18 2004-03-16 Rohm Co., Ltd. Semiconductor chip and production process therefor
US6437448B1 (en) * 2000-01-14 2002-08-20 I-Ming Chen Semiconductor device adapted for mounting on a substrate
US6400016B2 (en) * 2000-01-14 2002-06-04 I-Ming Chen Method for mounting a semiconductor chip on a substrate and semiconductor device adapted for mounting on a substrate
TW434848B (en) * 2000-01-14 2001-05-16 Chen I Ming Semiconductor chip device and the packaging method
US7057292B1 (en) * 2000-05-19 2006-06-06 Flipchip International, Llc Solder bar for high power flip chips
TW494548B (en) * 2000-08-25 2002-07-11 I-Ming Chen Semiconductor chip device and its package method
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
JP2003100801A (ja) * 2001-09-25 2003-04-04 Mitsubishi Electric Corp 半導体装置
US7102217B2 (en) 2003-04-09 2006-09-05 Micron Technology, Inc. Interposer substrates with reinforced interconnect slots, and semiconductor die packages including same
TW594889B (en) 2003-05-02 2004-06-21 Yu-Nung Shen Wafer level package method and chip packaged by this method
US7565141B2 (en) * 2003-10-08 2009-07-21 Macaluso Anthony G Over the air provisioning of mobile device settings
JP4972280B2 (ja) * 2004-12-09 2012-07-11 ローム株式会社 半導体装置
US20060186535A1 (en) * 2005-02-23 2006-08-24 Visteon Global Technologies, Inc. Semi-conductor die mount assembly
US7927976B2 (en) * 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
WO2010059781A1 (en) * 2008-11-19 2010-05-27 Semprius, Inc. Printing semiconductor elements by shear-assisted elastomeric stamp transfer
TW201023314A (en) * 2008-12-02 2010-06-16 Aflash Technology Co Ltd Semiconductor chip packaging structure
US8261660B2 (en) * 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
US8916969B2 (en) * 2011-07-29 2014-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, packaging methods and structures
US9048222B2 (en) 2013-03-06 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating interconnect structure for package-on-package devices
US9583420B2 (en) 2015-01-23 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufactures
US9293442B2 (en) 2014-03-07 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and method
US9281297B2 (en) 2014-03-07 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Solution for reducing poor contact in info packages
US9449947B2 (en) 2014-07-01 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package for thermal dissipation
JP5944979B1 (ja) * 2014-12-26 2016-07-05 千住金属工業株式会社 はんだ転写シート、はんだバンプ及びはんだ転写シートを用いたはんだプリコート方法
DE102016109950B3 (de) 2016-05-30 2017-09-28 X-Fab Semiconductor Foundries Ag Integrierte Schaltung mit einem - durch einen Überführungsdruck aufgebrachten - Bauelement und Verfahren zur Herstellung der integrierten Schaltung

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08236586A (ja) * 1994-12-29 1996-09-13 Nitto Denko Corp 半導体装置及びその製造方法
US5661086A (en) * 1995-03-28 1997-08-26 Mitsui High-Tec, Inc. Process for manufacturing a plurality of strip lead frame semiconductor devices
JP3060896B2 (ja) * 1995-05-26 2000-07-10 日本電気株式会社 バンプ電極の構造
DE19541039B4 (de) * 1995-11-03 2006-03-16 Assa Abloy Identification Technology Group Ab Chip-Modul sowie Verfahren zu dessen Herstellung
US5677567A (en) * 1996-06-17 1997-10-14 Micron Technology, Inc. Leads between chips assembly
US5902686A (en) * 1996-11-21 1999-05-11 Mcnc Methods for forming an intermetallic region between a solder bump and an under bump metallurgy layer and related structures
JP3611948B2 (ja) * 1997-05-16 2005-01-19 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
US5923234A (en) * 1997-10-27 1999-07-13 Lockheed Martin Corp. Hermetic feedthrough using three-via transmission lines
JP3042613B2 (ja) * 1997-11-27 2000-05-15 日本電気株式会社 半導体装置およびその製造方法
DE19800566A1 (de) * 1998-01-09 1999-07-15 Siemens Ag Verfahren zum Herstellen eines Halbleiterbauelementes und ein derart hergestelltes Halbleiterbauelement
US6075712A (en) * 1999-01-08 2000-06-13 Intel Corporation Flip-chip having electrical contact pads on the backside of the chip
US6011314A (en) * 1999-02-01 2000-01-04 Hewlett-Packard Company Redistribution layer and under bump material structure for converting periphery conductive pads to an array of solder bumps
TW434848B (en) * 2000-01-14 2001-05-16 Chen I Ming Semiconductor chip device and the packaging method
TW494548B (en) * 2000-08-25 2002-07-11 I-Ming Chen Semiconductor chip device and its package method

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DE10110453A1 (de) 2002-05-08
TW434848B (en) 2001-05-16
TW466715B (en) 2001-12-01
DE10101948A1 (de) 2002-04-18
DE10117239A1 (de) 2002-07-25
US6239488B1 (en) 2001-05-29
JP2002141438A (ja) 2002-05-17
TW466716B (en) 2001-12-01
JP3443567B2 (ja) 2003-09-02
DE10027852A1 (de) 2001-08-02
JP3328643B2 (ja) 2002-09-30
TW495933B (en) 2002-07-21
JP2002110853A (ja) 2002-04-12
US20020072148A1 (en) 2002-06-13
JP2002198464A (ja) 2002-07-12

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