TW409328B - Semiconductor integrated circuit device having dummy bonding wires - Google Patents

Semiconductor integrated circuit device having dummy bonding wires Download PDF

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Publication number
TW409328B
TW409328B TW87100068A TW87100068A TW409328B TW 409328 B TW409328 B TW 409328B TW 87100068 A TW87100068 A TW 87100068A TW 87100068 A TW87100068 A TW 87100068A TW 409328 B TW409328 B TW 409328B
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TW
Taiwan
Prior art keywords
semiconductor
patent application
wiring
bonding wires
dummy
Prior art date
Application number
TW87100068A
Other languages
English (en)
Inventor
Je-Bong Kang
Young-Hee Song
Si-Chan Sung
Original Assignee
Samsung Electronics Co Ltd
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Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW409328B publication Critical patent/TW409328B/zh

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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Description

日修正Α更正/補为' A7 _____ B7 五、發明説明(7 ) 線; 煩請委員明示nf'VHi所提之 .修i£·本有無t:t實贺内容是K£-f-.iLo 經濟部中央操準局負工消費合作社印t 夕數條黏接線’用以將該等引線電氣地連接至該等對 應黏接墊之一個對應黏接墊上;以及 一封裝體,用以封裝該晶片、該基體及該等黏接線, 且由一模穴内之流體模塑樹脂所製成; 其中’該等黏接線包含有至少一條第一黏接線及至少 條第一黏接線,該等第二黏接線具有較小於該等第一黏 接線之高度且設置相鄰於該等第一黏接線;且其令該等黏 接線更包含有至少一條具有一與該等第一黏接線相同高度 的虛設黏接線,該等虚設黏接線設置於該等第一黏接線與 其等之相鄰黏接線之間β 圖式簡述 本發明之此等及不同的其它特性與優點將參照以下連 同附圖之詳細說明而能清楚瞭解,其中相同的參考標號表 示相同的結構元件,且,其中: 第1圖係說明一傳統式半導體1C裝置之平面圖;-第2圖係沿著第1圖之剖面線Π-ΙΙ剖開之橫截面 囷; 第3圖係一說明由於模塑樹脂引入半導體ic裝置所 造成之黏接線的偏差的平面圖; 第4圖係一沿著第3圖之剖面線IV-IV剖開之橫截面 圖,其說明黏择線在偏差發生之前與後的位置; 第5圖係一橫截面圖’其說明模塑晶粒的橫截面圖, 其t模塑樹脂被引入之閘的位置被改變以防止接線偏差; -10- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X2W公爱)
U (諳先閱積背面之注意事項再填寫本頁) / /. . , y, · ----ί-.'r裝------訂------、線— ____· B7 --丨_ 丨· _ 五、發明説明(1 ) 1. 發明領迠 本發明大致係有關於半導體積體電路(IC)裝置。詳 而言之*本發明係關於一種含有虛設黏接線以防止於模塑 作業期間由偏差所導致之短路的半導體IC β 2. 相關拮藝描沭 半導體1C裝置需要一連通裝置,例如黏接墊,用以 電氣連接至外部環境的裝置。電氣連接典型藉由黏接線達 .成’將黏接墊連接至對應之基體(引線框架或印刷電路 板)的引線(或接線模圖)。黏接線通常由金、鋁或其等 之合金所製成。 經濟部中央標準局員工消費合作社印製 近來1C設計與製造業的快速發展加速了半導體裝 置的整合,以及裝置尺寸的縮小β因此,黏接墊之引線的 數目在墊的尺寸與間距及引線之寬度與間距縮減的同時減 少。順便一提的是,引線間距的縮減面臨一個由於裝置製 造條件的限制。因此,引線與晶片間的空間應被減小以便 較多數目的引線能圍著晶片譟置,這需要縮減連接引k與 晶片之黏接線的長度。長的黏接線較易受到進入模塑穴之 模塑樹脂的流前的位移或拖曳,造成相鄰黏接線接觸而將 裝置短路。此點對於縮減裝置大小而言是一關鍵的限制。 為防止於轉移模塑作業的期間的接線偏差,以及在同 時,使用一長的黏接線對於縮減裝置大小而言是重要的要 件。縮減裝置大小以減少每晶圓的對應裝置數是與生產力 與生產成本相關。雖然接線偏差對於所有種類之半導體 1C裝置的製造而言是一普遍的問題,其對於具有大量 -4- 本紙張尺度適'用中國國家標準( CNS)A4規格(210><297公釐) 經濟部中央標準局員工消費合作杜印製 409328 A7 —_ B7 五、發明説明(2 ) 接腳數目的多接腳封裝以及數種封裝而言是獨特的。 目則大量生產允許1C裝置的製造者有最大200密爾 的黏接線。黏接線長度的限制取決於模塑作業技術,而非 接線的黏接操作本身。亦即,雖然接線黏接技術允許使用 約250密爾的線,由模塑作業期間模塑樹脂流所造成的接 線偏差阻礙了 200或更多密爾長的接線的使用^ .現存半導體1C裝置的接線偏差將參照第i至4圖加 以描述。第1圖係一說明一傳統半導體IC:裝置的平面 圖;第2圖係一沿著第1圖之剖面線]之橫截面圖; 第3圖係一說明模塑樹脂流造成之黏接線的偏差;以及第 4圖係一沿著第3圖之剖面線iv-iv之橫截面圖,其說明 偏差發生之前與後的黏接線的位置^ 第1圖所示之ic裝置係一種多接腳封裝,通常稱為 QFP (四角平封裝)β該裝置最後以接線黏接作業完成, 其申晶片10透過黏接線30連接至引線框架2〇,且已準 備好後續的模塑作業。晶片1 〇貼附於引線框架2〇的晶粒 墊22上,且晶粒墊22透過複數個,例如四(4 )個形成 於引線框架20角落的繫桿26與引線框架20耦接。引線 框架20的諸引線24透過黏接線30與晶片1〇的各個對應 的黏接墊12電氣連接。 該裝置將進行模塑作業,其中晶片、電氣接點及晶粒 墊將被模塑樹脂封裝《虛線40以内的區域將被封裝。第 2圖係沿著第1圖之ΙΙ-ΙΙ剖面線剖開之橫戴面圖,顯示 位於一模穴50内之裝置。模塑混合物流進入之閘52位於 本紙張尺度適用中國國家標準(CNS ) Α4規格(2丨0X 297公瘦) (請先閲讀背面之注意事項再填寫本頁) -0~裝_ ;s> 409328 A7 __--···_B7 五、發明説明(3 ) 靠近第1圖之四個繫桿26的其中之—。模塑樹脂流透過 閘52以參考數字42所指示之方向進入模穴並充填由上及 下模塑半段50a、50b所形成之穴54。 模塑樹脂係一鬲黏性的流體,而黏接線彎曲或被拖曳 朝向模塑樹脂流進入模穴54的方向。由模塑樹脂流42所 造成的接線偏差係顯示於第3圖。第3圖顯示大部分的黏 接線30受到一由於模塑樹脂流所造成之彎曲力的偏差, 且特別是最接近繫桿26之接線30a.(最外的接線30a,) 受到最嚴重的彆力以接觸相鄰的接線3〇|5並將裝置(第3 圖中之S’)短路。第4圖係沿著第1及3圖之剖面線IV-IV剖開之橫截面圖,其說明模塑操作之前與後之結線的 錯列。 於第4圖中,模塑操作之前的接線以實線顯示,而模 塑标作之後的接線以虛線顯不。如第4圖所示,最外面的 接線30a的錯列明顯大於其它接線30b、30c的錯列,此 造成最外面的接線30a接觸並將相鄰的接線30b短路。其 餘的接線30b、30c有一類似量的錯列,造成無接觸或短 路。最外面的接線3〇a有最大的錯列之理由可推測如下。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 由最外面接線30a至其具有一繫桿26的相鄰接線的 距離(dl)大於由一接線30b至其它相鄰接線30c之距離 (d2)。此係因為在引線框架的角落有一繫桿26»最外 邊接線30a係與一較其它接線30b、30c為大量之進入該 模穴之模塑樹脂流的_彎力接觸。指示出各別黏接線之偏差 的量的偏差的程度為,最外邊接線30a的是4 一 6%而其 -6- 本紙張尺度適用t國國家標準(CNS ) A4規格(210X297公釐) :; A7 B7 五、發明説明(4 ) 它接線30b、30c的是2 — 3 %。此處,名詞“偏差的程 度”係定義為 〔在接線中心之位移/接線長〕X 100。 至於第1至4圖所示之1C裝置,黏接墊12的間隙是 75从m而引線24的間隙是200仁m (根據諸引線之内 端)’故相鄰接線之間在中心的距離約為136.5仁m 〇此 外’最外邊接線30a的長度為218密爾"因此,倘若最外 邊接線30a以及其相鄰接線30b的位移率分別是6 %及3 % ’則最外邊接線30a之位移及其相鄰接線30b分別為 13密爾(=325〆m)及6_5密爾(=162.5私m)。因 而,此二接線30a及30b之間的位移差(=162.5密爾// m)遠大於其等之距離(136.5#!η),結果造成接線的接 觸。 為避免接線偏差所伴隨的此一問題,半導體1C會減 少晶片角落上之黏接墊之間距以便確保相鄰接線間有足夠 大的空間’以便即使發生接線偏差,諸接線仍不會接-觸或 短路。然而此種方法一定會面臨到縮減晶片尺寸的趨勢而 並不有利。 頒給哈洛的美國專利第5,302,850號所教示的另一個 方法包括對模穴之結構的修正。亦即,流入開口 62a、 62b分別在中央地設置於上及下模部,而現存的模塑在下 模部之範圍内具有一流入開口。根據美國專利第 5,302,850號,樹脂流的方向及將半導體1C裝置與引線連 接的黏接線的方向從該裝置的中心大約呈放射狀,可防止 -7- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) •Λ-γ裝. 訂 經濟部中央標準局員工消費合作社印掣 409S2S at ________B7 五'發明説明(5) 接線的偏差。 然而,此種方法有一個缺點,即封裝在模塑操作之後 有一封裝體,其上及底表面之中心由於流入開口而有黏附 物。此等黏附物使後續商標名稱及製造商名稱印在封裝表 面上的標識操作的可靠性惡化β再者,此一方法需要一個 新的模塑設備。 發明簡述 因此,本發明之目的在於解決於模塑操作期間接線偏 差所伴隨的問題。 本發明在於可藉由減少裝置内接線的長度而縮小半導 體ic裝置的尺寸。 根據本發明’提供一種半導體1C裝置,其能改善生 產以及降低生產成本〇 本發明提供一種半導體積體電路(1C)裝置,其包含 有: 一半導體1C晶片,其具有一個有多數邊的主為表 面,以及多數條沿著該等邊形成於該主動表面上的黏接 墊; 經濟部中央標準局員工消費合作杜印製 一基體,其具有多數條引線朝向該晶片延伸並自該晶 片分開; 多數條黏接線,用以將該等引線電氣連接至對黏接墊 之對應黏接墊;以及 一封裝體,用以封裝該晶片、該基體及該等黏接線, .且由一模穴内之流體模塑樹脂所製成; 本紙張尺度適用中國囤家標準(CNS ) Α4規格(2丨0><297公釐) 經濟部中央樣準局員工消費合作社印裝 409328 A7 ^________B7 _ 五、發明説明(6 ) 其中,一或多條黏接線直接暴露於一進入該模穴之模 塑樹脂故能較其它黏接線較容易受到接線偏差;以及 其中該裝置更包含有至少一條虛設黏接線,其阻隔諸 接線直接暴露於該模塑樹脂的流前。 本發明更提供一種半導體積體電路(ic)裝置,其包 含有: 一半導體1C晶片’其具有一個有多數邊的主動表面 及多數條沿著該等邊形成於該主動表面上的黏接線; 一基體,其具有多數條朝向該晶片延伸並遠離該晶片 之引線; 多數條黏接線,用以電氣地將該等引線連接至該等對 應黏接墊之一個對應黏接墊上;以及 一封裝體,用以封裝該晶月、.該基體及該等黏接線, 且由一模穴内之流體模塑樹脂所製成;. 其中’該等黏接線包含有一或多條確實的黏接線,該 等確實的黏接線遠離相鄰黏接線一大於其它黏接線-的間 隔’且該等黏接線更包含至少一條具有一與該等確實黏接 線相同高度的虚設黏接線,該等虛設黏接線設置於該等特 定#接線與其等之相鄰黏接線之間。 本發明將更進一步提供一半導體積體電路(1C)裝置, 其包含有: 半導體1C晶片,其具有一個有多數邊的主_動表面 及多數條沿著該等邊形成於該主動表面上的黏接線; 一基體,其具有多數條朝向該晶片延伸並該晶片之引 冬 本紙張尺度適用中國函^^"準((:奶)八4現格(2丨0\297公釐) --------ν_ν·裝-- η I (請先閱讀背面之注意事項再填寫本頁) 訂 h. .4 日修正Α更正/補为' A7 _____ B7 五、發明説明(7 ) 線; 煩請委員明示nf'VHi所提之 .修i£·本有無t:t實贺内容是K£-f-.iLo 經濟部中央操準局負工消費合作社印t 夕數條黏接線’用以將該等引線電氣地連接至該等對 應黏接墊之一個對應黏接墊上;以及 一封裝體,用以封裝該晶片、該基體及該等黏接線, 且由一模穴内之流體模塑樹脂所製成; 其中’該等黏接線包含有至少一條第一黏接線及至少 條第一黏接線,該等第二黏接線具有較小於該等第一黏 接線之高度且設置相鄰於該等第一黏接線;且其令該等黏 接線更包含有至少一條具有一與該等第一黏接線相同高度 的虛設黏接線,該等虚設黏接線設置於該等第一黏接線與 其等之相鄰黏接線之間β 圖式簡述 本發明之此等及不同的其它特性與優點將參照以下連 同附圖之詳細說明而能清楚瞭解,其中相同的參考標號表 示相同的結構元件,且,其中: 第1圖係說明一傳統式半導體1C裝置之平面圖;-第2圖係沿著第1圖之剖面線Π-ΙΙ剖開之橫截面 囷; 第3圖係一說明由於模塑樹脂引入半導體ic裝置所 造成之黏接線的偏差的平面圖; 第4圖係一沿著第3圖之剖面線IV-IV剖開之橫截面 圖,其說明黏择線在偏差發生之前與後的位置; 第5圖係一橫截面圖’其說明模塑晶粒的橫截面圖, 其t模塑樹脂被引入之閘的位置被改變以防止接線偏差; -10- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X2W公爱)
U (諳先閱積背面之注意事項再填寫本頁) / /. . , y, · ----ί-.'r裝------訂------、線— 經濟部中央操準局員工消费合作社印製 409328 A7 . __-_____;_…B7_ 五、發明説明(8 ) 第6圖係一立體圖,其說明在模塑操作之前黏接線的 組態,該組態被使用於一模擬的實驗中以分析接線偏差的 現象; •第7圖係一立體圖’其說明第6圖t之黏接線在模塑 操作之後之組態; 第8圖係一切開圖,其說明包含根據本發明之第一實 施例之虛設黏接線的半導體1C裝置的封裴; 第'9圖係一部分放大圖,其說明第8圖中之裝置於模 塑操作期間該虚設黏接線的組態; 第10圖係一沿著第9圖之剖面線χ-χ剖開之橫截面 圖, 第11圖係一部分平面圖,其說明一半導體1C裝置之 虛設黏接線之組態,該等虛設黏接線係根據本發明之第二 實施例; 第12圖係一沿著第11圖之剖面線χπ_χπ刹開之橫 截面圖; - 第13圖係一平面圖,其說明另一種包含根據本發明 之虛設黏接線之半導體1C裝置的封裂; 第14圖係一平面圖,其說明一半導體IC裝置中之虛 設黏接線的組態,該等虛設黏接線係根據本發明之第三實 施例; 第15圖係一沿著第14圖之剖面線χν_χν剖開之橫 截面圖;以及 第16圖係一部分平面圖,其說明一半導體ic裝置中 -11- 本紙張尺度通财關緣準{ CNS) Μ規格⑺QX297公幻 (請先閲讀背面之注意事項再填寫本頁) 一 訂 濟.1.. 濟.1.. 經濟部中央橾準局員工消費合作杜印製 409328 A7 .. A 7 ·---' _______B7_ · 五、發明説明(9 ) ' 之虛設黏接線的組態,該等虚設黏接線係根據本發明之第 四實施例。 發明詳述 根據本發明之第一層面,提供一種半導體ic裝置, 其包含一半導體1C晶片’晶片表面上有多數個黏接墊β 該晶片有一具有多數個邊的主動表面,.且有多數條黏接線 沿該等邊形成於該主動表面上。該裝置包含有一基體,該 基體具有多數條延伸向談晶片而自該晶片遠離的引線β該 等黏接墊透過黏接線電氣地連接至該等對應引線之各對應 引線。該晶片、該基體及該等黏接線係藉由一模塑樹脂封 裝以形成一封裝體〇 根據本發巧之第一層面,該裝置具有一或多條暴露的 接線。名詞“暴露的接線”表示於模塑操作期間直接面對 進入模穴之模塑樹脂的流前的接線。該等暴露的接線受到 上述其它接線當中最嚴重的接線偏差。 根據本發明之第一層面,該裝置進一步具有至少二條 虛設黏接線,其等jyt_該等暴露的接線而不會直接與該模 塑樹脂之流前接觸。對於該裝置而言,該等暴露的接線可 以是將最外邊的黏接墊連接至對應的最外邊引線的黏接 線,或是相鄰高度與該等第一黏接線不同的第二黏接線的 .黏接線。對於前者而言,虛設黏接線可以是將晶粒墊連接 至繫桿之二條黏接線,或是可以為將虚設墊連接至最外邊 引線之黏接線。對於後者而言,虚設黏接線可以是將絕緣 墊連接至與該等暴露接線連接的該等引線的黏接線。或者 -12- 本紙张疋度適用中國國家標準(CNS ) Α4規格(210X 297·公釐) (請先閲請背面之注意事項再填寫本頁} 訂 Ρ "409328/ A 7 ___;__B7 五 '發明毵明(10 ) ~ 是,該等虛設接線可以是將該等絕緣墊連接至諸虛設引線 的黏接線。 對於根據本發明第一層面的半導體IC裝置而言’基 體可以是引線框架或是一印刷電路板,且該裝置可以是 QFP、TQFP'PLCC、SO 或 PTS0P 的其中之一。 根據本發明第二層面,該半導體1(:裝置包含一或多 條確實的黏接線,其等係遠離該等相鄰黏接線一較大於其 它的距離。該裝置更包含至少一虚設黏接線,具有與該等 確實黏接線之1¾度相同的高度。該等虛設黏接線設置於該 等確實黏接線與其等相鄰黏接線之間。 對於根據本發明第二層面的半導體1C裝置而言,該 等虛設黏接線係將該等最外邊墊連接至該等對應最外邊引 線的各對應引線。或者,該等虛設黏線係二條將晶粒墊連 接至繫桿的黏接線。 對於根據本發明第三層面,.的半導體1C裝置而言,提 供一種半導體1C裝置,其包含有至少一第一接線及-至少 一第二接線,該第一及第二接線具有不同的高.度。第一黏 接線包含遠離其等相鄰第一接線一較大於其它接線的確實 黏接線。且具有與該等確實接線相同之諸虛設黏接線係設 於該等確實接線與其等相鄰之第一接線之間β 對於根據本發明第三廣面的半導體ic裝置而言,該 等第二接線可以為將該等黏接墊連接至電源端或至接地端 的黏接線。而且,該等虛設黏接線可以是將該等絕緣墊連 接至與該等確實接線耦合之引線的黏接線。或者,其等可 -13- ϋ尺度適用中國國家標準(CNS ) Α4規格(2ί〇χ297公楚\ ~ - ---
IU _ I -I -- (請先閲請背面之注$項再填寫本頁) ,麵
Mr 經濟部中央標準局負工消費合作社印製 409328 經濟部中央標準局員工消費合作杜印製 A7 B7 五、發明説明(u) 以是將該等絕緣墊連接至該等虛設引線的黏接線。 本發明現將參照以下附圖更加詳細描述。類似及相同 的元件分別由圖式t類似及相同的參考標號表示》 第6圖係一立體圖,說明在模塑操作之前黏接線的組 態,該組態使用於一模擬實驗以分析接線偏差現象;及第 7圖係一立體圖,說明在模塑操作程序後,第6圖中之黏 接線的架構。影響接線偏差的參數包括模塑樹脂流的黏度 及速率、接線的長度及高度、模塑樹脂流相對率接線的角 度、及類似者。最外邊接線之偏差的最嚴重及主要的造成 原因在於相鄰接線之間的距離及間隔。因而,接線偏差的 程度與接線暴露於模塑樹脂流前的程度有一非常緊密的關 係。為加強此處的了解,吾人進行了模擬實驗。 如第6圖所示’晶片uo之四個邊的其中之一邊係分 成四節段A、B、C及D。節段A包含具有一相當低高度 的黏接線,節段B及D包含具有相當大高度的黏接線, 且節段C沒有黏接線。在完成模塑操作之後,其結·果顯 示於第7圖’其中每節段顯示有最嚴重的接線偏差,因而 將直接暴露於模塑樹脂流前142的最外邊的接線130a、 130b、130d 短路。 此模擬實驗的條件與結果如下: •封裝型式:208QFP *引線框架120諸引線124的間距:200仁m •晶片 110 尺寸:4675 /zmx 4675 私 m •黏接墊112間距:75从m -14- (請先閲讀背面之注意事項再填寫本頁) 裝- -訂
-Q 本紙張度適用中國國家標準(CNS ) A4規格(21〇χ 297公釐 鲤濟部中央標隼局員工消費合作社印製 A7 ___________— 五、發明説明(12) *黏接線130直徑:1·3密爾(= 32,5ym) * 黏接線 130 高度:180-200jumCh) 450-470" m (h2) •黏接線 130 長度:182-218^111 •接線偏差程度:2.6% (對i3〇a而言) 1·ίΜ.3% (對除了最外邊接線 130a以外的所有節段Α的黏接 線而言) 5.8% (對於n〇b而言) 1-3% (對除了最外邊接線13〇b 以外的所有節段B的黏接線而 言) 4% (對於I30d而言) 1-2% (對於最外邊接線13〇d 以外的所有節段D的黏接線) 此等結果顯示最外邊接線13〇a、130b、13〇d最-早接 觸模塑樹脂流前,受到最嚴重的接線偏差,且因而使裝 置短路。節段B接線與相鄰接線間具有與節段A接線間 類似的間距,但其它相鄰接線各有不同的高度,其等受 到程度幾乎到達節段D接線的相同程嚴重的接線偏差β 郎段D設置於沒有接線的節段c後面,直因此節段D 中的接線130d受到模塑樹脂流的嚴韋且直接的彎力。另 一方面,節段A中的接線受到相對較小於其它節段中接 線的偏差。然而,節段A中的接線的高度太小以致於無 -15- 本紙張尺度適用中國國家標準(CNS ) A4規格-(27〇X297公ϋ’ (請先M請背面之注意事項再填寫本頁) .-o~ 裝· 訂. ii.. A7 B7 五 經濟部_央標準局員工消費合作社印製 409328 、發明説明(13 ) 法提供充分的彎曲強度,造成裝置大量生產上的困難。 由是,可以了解到一最早暴露於進入模穴之模塑樹 脂流前的確實接線的偏差係顯著的,且因而減少暴露可 以防止或有效地減少接線偏差。或者,使所有的接線暴 露於樹脂流至一較小的程度,故每條接線能受到較小程 度的偏差。否則,裝置能被如此設計,以便偏差及因而 的短路將不會影響裝置的功能。以下係本發明的特定實 施例。 第8圖係一部分切開圖,說明半導體ic裝置的封 震’其包含根據本發明之第一實施例的虛設黏接線;第 9圖係一部分放大平面圖,說明第8圖之裝置於模塑操 作期間虚設黏接線的架構;以及第1 〇圖係一沿著第9圖 之剖面線Χ-Χ剖開的橫截面圖。參照第8至10圖,半 導體1C裝置包含有一半導體1C晶片110,其一主動表 面Π4具有多數(例如四)個邊,以及多數個沿著該等 邊形成於主動區的黏接墊112。晶片110係連接於—引線 框架120的晶粒墊122。自晶粒墊122的角落延伸的繫 桿126於封裝組裝步驟期間支撐晶粒墊122及晶片 110。引線框架120的引線124遠離並繞著晶>} 110設 置。引線124係放射狀地向晶片11〇延伸。 引線124係透過黏接線130電氣地連接至黏接墊 112的一對應黏接墊上。晶片11〇、引線124以及黏接線 130被封裝以產生一封裝體140。向封裝鳢140外延伸的 引線124的部分被形成以致於產生一適當的組態安裝於 .16· 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210X297公釐) (請先閲讀背面之注ί項再填寫本頁) 訂 經濟部t央標準局員工消費合作杜印製 五、發明説明(14) 外部的PCB (未顯示)上,因而產生一封裝1〇〇。顯示 於第8圖之封裝係QFP的一個例子》每條接線j 3〇,除 了最外邊的接線130e、130f以外,相鄰接線間皆具有相 同的間隔或距離。在繫桿126兩側上的最外邊接線i30e 及130f有較其它接線大的間隔β因此,當模塑樹脂進入 模穴時,最早暴露於流142前的最外邊接線i3〇e受到嚴 重的偏差及使相鄰接線短路。為避免此種接線偏差及短 路’多數條,例如二條j設黏接線132的132a、132b設 置於接近或在繫桿126上以縮減最外邊接線i3〇e、i30f 的間隔,藉以使最外邊接線130e偏差的程度類似於其它 接線的程度,以及防止短路。 虛設黏接線132可以藉由將i趕126耦接至晶粒墊 的其餘部分而形成’其中晶片110並未貼附於該晶粒墊 上。為減少自模塑樹脂流施加於最外接線130e上的壓 力,最好使該等虛設黏接線132的高度與最外接線I32e 的高度相同。一個實際的問題是_,由於接線黏接操4時 自動化的,綠蓋敷接象_丄12_^„复控ϋ二耦接 係非常容易的。 重要的是,應該要設置虛設黏接線132,以便其等 與最外接線132e間的間隔變得幾乎與其它接線130間的 間隔相同'相對地,該等虚設黏接線132與相對最外接 線130f間的間隔並不如此重要顯著。即使會最早面對模 塑樹脂流前的虛設黏接線132a,會受到一嚴重的偏差而 接著對緊鄰的虛設黏接線132b短路,其並不會產生使一 -17- 本紙承X度適用中國國家標準(CNS ) A4規格(2丨0X297公嫠) (請先閱讀背面之注^項再填寫本頁) - n I n 409328 Α7, Β7. 經濟部中央標準爲員工消费合作社印製 五、發明説明(15) 裝置短路的問題,因為該等虛設黏接線132a及132b係 耦接至繫桿126上且並沒有電氣的功能β此點將解釋為 何應該要形成兩條虛設黏接線132a與132b» 第11圖係一部分平面圖,說明於一半導體裝置 中的虛設黏接線的組態,該等虛設黏接線係根據本發明 之第二實施例;以及第12圖係一沿著第u圖之剖面線 • XII-XII剖.開的一橫截面圖。參照第11及12圖,除了該 等虛設黏接線134係以不同的組態設置以外,該半導體 1C裝置具有與上述第一實施例相同的結構。因而,根據 本發明之第二實施例,一虛設黏接墊116係額外地形成 於晶片110的主動表面114上,在一個最外黏接塾H2e 旁邊並朝向晶片110之一角落的位置。虚設黏接墊n6 具有與最外黏接墊112e相同的功能。虛設黏接墊116係 透過虚設黏接線134連接至外引線U4e。因此,最外引 線124e係連接至最外黏接墊U2e以連接至虛設黏接墊 116。當模塑樹脂進入模穴時,虛設黏接線134最早®對 流前’且因而受到最嚴重的偏差。然而,由於最外接線 130e係連接至虚設黏接墊lie以及連接至最外黏接墊 112e,而即使其等有不同的位置仍具有相同的功能,最 外接線130e對虛設黏接線134的接觸與短路將不會造成 問題。 雖然此等第一及第二實施例係關於QFP,多接腳封 裝的一個代表性例子,被加以描述,其等能被應用於其 它型式的封裝上β特別是,其等可以被應用至諸如 -Ί8- ϋυ (請先閲讀背面之注意事項再填寫本頁) 訂 ,1- - Mr 本紙張尺度適用中國國家標準(CNS )·Α4規格(210X297公釐) 經濟部t央標準局貞工消費合作社印製 409328 Α7 Β7 五、發明説明(16) PLCC (塑膠引線晶片載體)的其它h多接腳封裝上、'諸 如SOP C小外形封裝)、TSOP (薄小外形封裝)或 TQFP (薄四方平封裝)、以及BGA (球格矩陣)等封 裝的薄封裝上。 第13圖係一平面圖,說明一 BGA封裝’作為另種 型式的封裝,其包含根據本發明之虛設黏接線,於BGA 封裝200中,一印刷電路板(pCB) 200作為外部電氣 連接裝置’而不像QFP,於QFP中’,引線框架作為相同 的功能。:PCB 200包含有一晶粒墊222,晶片11〇黏接 於該晶粒墊222上,以及引線224 (或接線圖),其等 透過接線連接至晶片110,如同QFP的引線框架》pCB 220與該引線框架不同,其中該晶粒墊220及該等引線 224係形成於一絕緣樹脂體221且透過形成於該絕緣樹 脂體221中的孔225電氣地連接至焊球228。第13圖中 的參考標號24.0係指一封裝體。 BGA封裝220亦可能受到由於接線偏差造成的短 路。上述之本發明的第一及第二實施例能被應用於BGA 封裝上。BGA封裝在晶粒墊與諸引線之間可以具有電源 端或接地端。此等端子通常為繞該晶粒墊的環型,且電 氣地連接至該晶片上之對應的一個或多個黏接墊上。 該等連接至電源端或接地端的黏接線大致具有較小 .於其它黏接線的高度。具有較小高度的該等黏接線對具 有較大高度的接線而言有相同於無接線的效果。因此, 可能發生接線偏差及裝置短路。以下本發明第三及第四 -19- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閲讀背面之注意事項再填寫本頁)
• · · » -*-··' f\ / , ____4093/86___Βτ^_ 五、發明説明(17) 實施例提供解答。 第14圖係一部分平面圖,說明一半導體ic裝置中 的虚設黏接線的組態’該等虛設黏接線係根據本發明之 第三實施例;及第15圖係一沿著第14圖之剖面線XV-XV剖開之橫截面圖。參照第14及15圖,電源端223 (或接地端)係設於黏接有晶片110的晶粒墊222與引 線224之間。黏接墊之一 I22g係透過黏接線130g電氣 地連接至電源端223 ’而黏接線i30g具有較其它接線高 度‘h2*小的高度.‘hi’ 。因此,鄰接接線130g的接線 130h( ‘暴露的接線’)係直接暴露於模塑樹脂流前 142且較受到偏差及短路所苦。 為避免由於接線高度造成之接線偏差,一虚設黏接 線136係設於暴露接線I30h與較小接線130g之間。虛 設黏接線136將一絕緣墊222a連接至與暴露接線130h 連接的引線224h。虛設黏接線136 .係設置以便有與暴露 接線130h之‘h’相同的高度》虛設黏接線136的'偏差 以及因而的短路不會造成問題。 經濟部中央標準局員工消費合作社印製 第16圖係一部分平面圖,說明一半導體IC裝置中 虛設黏接線的組態,該等虛設黏接線係根據本發明之第 西實施例。此實.施例與第三實施例不同之處在於,前 者,虛設黏接線138將絕緣墊222a連接至一虚設引線 224i。虛設引線224i係一絕緣引線,其不會電氣地與諸 如軟焊球(第13.圖中的228)的外部接點連接。 本發明可以防止半導體1C裝置於模塑操作期間的接 -20- 本紙張尺度適用中國國家橾準(CNS ) A4規格(210 X 29了公釐) 18 409328 Αν __ B7 五、發明説明( 線偏差及短路,因而可以有效減少在增加黏接線長度時 的限制。由是,能達成晶片尺寸的縮小以及因而增加每 晶圓之晶片數目,結果產量改善及生產成本減少β 再者’本發明的優點在於能藉由使用現存的設備, 並對有關接線黏接操作之程式的稍微修改,即可實施並 應用到不同的封裝上。 雖然本發明之較佳實施例已詳細描述,應可清楚了 解到,熟於此技藝之人士可對此處所教示之基本獨創之 概念提出種種變化及/或修改而仍能在後附之申請專利 範圍所界定之本备明的精神與範圍之内。 I--------O-裳-- - -- (請先閲请背面之注意事項再填寫本頁) 訂
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J 經濟部中央標準局員工消費合作社印製 409328 A. A i B7 五、發明説明(19) 元件標路號對照表 10, 110晶片 12, 112黏接墊 20, 120引線框架 22, 122, 220 晶粒墊 24, 124, 224 引線 26, 126 繫桿 30, 130, 134 黏接線 30a,30b, 30c 接線 40虛設接線 42模塑樹脂流 50a、50b上及下模塑半段 52閘 54模穴 62a、62b 開口 100封裝 112e最外黏接墊 114主動表面 140封裝體 130a, 130b, 130d,130e,130f,130e 最外邊接線 142虛設模塑樹脂流前 138虚設黏接線 200印刷電路板(PCB) 221絕緣樹脂體 -22- 本紙張尺度適用中國國家標準(CNS ) A4規格(2!0Χ 297公釐) --------^ !"裝-- (請先鬩讀背面之注意事項再填寫本頁) 訂 409328 A7 B7 五、發明説明(2Q) 222a絕緣墊 223電源端(或接地端) 224i虛設引線 225 .孔 228焊球 (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 Γ 經濟部中央標準局員工消費合作社印製 -23- 本紙張尺度適用中國國家標準(CNS ) A4規格(2Ϊ0Χ 297公釐)

Claims (1)

  1. 煩%明示平卞月多3、所提之 經濟部智慧財產局員工消費合作社印製 .务J0E.-H4#•無變烫實質内餐_准予修正ο W年f月3曰修讀·齡I ________________D8_ •'申請專利範園 ^ 引線;. 多數條黏接線,用以將該等引線電氣地連接至該等 對應黏接墊的一對應黏接塾;以及 一封裝體,用以封裝該晶片、該基體及該等黏接線 ,以及係由一模穴中之一流體模塑樹脂所製成; 其中該等盈接線包含有_革少一條葶二黏接線及至少 一倏墓黏接線,該等I仝I接益具有律少於該等第一 霉占療線之高度且相鄰設置於該等第一黏接線;以及其中 該等黏接線更包含有墓少一I具有一與該等I一龜蓋線 想_M直·度的處設.舉接緣且設置於該等·篇二黏_接」象與其等 之相鄰第二黏後齓。 22. 如申請專利範園第21項所述之半導體ic裝置,其中 該基體更包含一該晶片黏結於上的晶粒墊以及至少一圍 繞該晶粒墊設置的電源端或接地端;以及其中該等第二 黏接線將該晶片之該黏接墊連接至該等端。 23. 如申請專利範圍第22項所述之半導體1C裝置,其中 該等第一黏接線更包含數條確實黏接線’該等確實黏接 線係遠離其相鄰第一黏接線一大於其餘第一黏接線所具 有的間隔;其中該晶粒墊在其中一表面上設有數個絕緣 墊;以及其中該等虚設黏接線將該等絕緣墊連接至與該 等確實黏接線連接的引線。 24. 如申請專利範圍第22項所述之半導體ic裝置,其中 該晶粒墊在其中一表面上更設有數個絕緣墊;以及其更 包含設於該等引線之間的虚設引線,該等虛設引線並不 ___ -28- 本紙張尺度適用中關家操準(CNS )⑽桃(21GX297公着j— — --- (請先閲讀背面之注$項再填寫本頁} 訂』 V A8 BS C8 D8 409328 申請專利範圍 1. 一種半導體積體電路(IC)裝置,包含有: 一半導體1C晶片,有一具多數面的主動表面,以 及多數個沿著該等面形成於該主動表面上的黏接塾; 一基體,具有多數向該晶片延伸且遠離該晶片的ϋ 多數條黏接線,用以將該等引線電氣連接至該等對 應黏接墊之一對應黏接墊;以及 一鼓裝^體,用以封裝該晶片、該基體及該等黏接線 ,且由一在一模穴中的肩旨製成; 其中,一或多數條該等黏接線(‘暴) 係直接地暴露於進入該模穴中的樹脂流前,所以其等較 其它黏接線更容易受到接線偏差;以及 其中該裝置更包含有至少一條並 2. 如申請專利範圍第1項所述之半導體1C裝置,其f該 虛設黏接線具有與該等暴露接線相同的高唐。 _ 3·如申請專利範圍第2項所述之半導體1C裝置,其包含 數個設置於該晶片之角落上的,以及其中該等 暴_農接益係將該等H查產接至該等對應的 的黏_接」線。 4.如申請專利範圍第3項所述之半導體1C裝置,其中該 基體更包含一該晶片黏結於上的晶粒墊以及自該晶粒墊 角落延伸且與該晶粒墊烏落成為一體的,以及其中 該等虛設黏接線係二條將該晶粒墊連接至其中之一該繫 -24- 本紙朵尺度逋用中國读家標準(CNS ) A4規格(210><297公嫠) 請 先 鬩 讀 '背 1¾ 之 注 項 再 填 % 本 頁 經濟部中央標準局員工消費合作社印製 A8 Ήδ C8 D8 經濟部中央標準局員工消費合作社印製 409328 申請專利範圍 桿的相鄰黏接,該其中之一條.繫握毯置於設有該等暴露 黏接線的鱼I上。 5. 如申請專利範圍第3項所述之半導體1C裝置,其更包 含數個緊鄰該盒並|形成的盧爲墊,且具有與該最外墊 相同的功能,以及其中該等虛設黏接線將該等虛設墊連 接至該等最外引線的一對應引線。 6. 如申請專利範圍第2項所述之半導體1C裝置*其包含 第一接線及第二接線該第一接線具有與該等第二接線 不同的高度’且於緊鄰該等第二接線設置;以及其中該 第一接線係該等暴露接線。 7. 如申請專利範圍第6項所述之半導體1C裝置,其中該 其體更包含一該晶片黏結於上的塾,及數個設置於 該晶粒墊之一表面上的絕_緣墊,以及其中該等虛設黏接 ^將該等絕緣墊連接至與該等暴露接線連接的引線。 8如申請專利範圍第6項所述之半導體1C裝置,其中該 基體更包含·一該晶片係黏接於’上的畢教势、.數個設 '置於 該晶粒墊之一個表面上的壓凑塾、及象舞非奄氣連接至 外部裝置的虛兔弓丄蜂;以及其中該等虛設黏接線將該等 絕緣墊連接至該等虛設引線。 9·如申請專利範圍第2項所述之半導體ic裝置,其中該 基體係一 f.丨線揠架。 10. 如申請專利範圍第9項所述之半導體1C裝置,其係一 種 QFP、TQFP、PLCC、SOP 或 TSOP。 11. 如申請專利範圍第2項所述之半導體1C裝置,其中該 (請先閱讀臂面之注意事項再填寫本頁)
    -25- 409328 AS BS C8 D8 六、申請專利範圍 基體係一 板,該印刷電路板係由一絕緣樹脂基 (請先閲讀背面之注意事項再填寫本頁) 體、一該樹脂基體上之晶粒墊、該樹脂基體上之數條引 線、以及透過穿透該樹脂基體的孔所組成。 12. 如申請專利範圍第11項所述之半導體1C裝置,其係 一 BGA封裝》 13. —種半體積體電路(1C)裝置,包含有: 一半導體丄1晶„片,有一具多數面的主動表面,以 及多數個沿著該等面形成於該主動表面上的黏接墊; 一基遭,具有多數條向該晶片延伸且遠離該晶片的 引線; 多數银敷,用以將該等引線電氣連接至該等對 ' 應黏接墊之一對應黏接墊;以及 · 就’用以封裝該晶片、_該基體及該等黏接線 ,以及係由一模穴中之一流體塑樹脂所製成; 其中,該等黏接線包含一或多條接線,該等 確直屬^象絶該等相鄰黏接線一屬其它黏接線為闓 隔,且該等黏接線更包含皂少一舞1有與..該-等旅實-黏名 ‘處极虬高__度_故1_設梟基^,且該等虛翼梟慕I設置於該 等唪實盖_摄與.鄰i接象之潤。 Λ 14.如申請專利範圍第13項所述之半導體1C裝置,其包 含設置於該晶片之角落上的量iLtf,且該等禮_^毅 係將該等蓋外皇連接至該等對應最外墊之一 jhAJi之JI 接線,該等產UL線係最早接觸進入該模穴内之模塑樹 脂的流前。 -26- 本紙張逋用中國國家標準(CNS ) A4規格(210X297公釐) ' 409328 戠 C8 D8 々、申請專利範圍 (請先閱讀背面之注意事項再填寫本頁) 15. 如申請專利範圍第14項所述之半導體1C裝置,其中 該基體更包含一該晶片黏結於上的晶粒墊以及自該晶粒 墊角落延伸且與該晶粒墊角落成為一體的,以及其 中該等虛設黏接線係二條將該晶粒墊連接至其中之一繫 桿的相鄰黏接線,該其中之一繫桿設置於設有該等確實 黏接線的角落。 16. 如申請專利範圍第14項所述之半導體1C裝置,其更 包含相鄰形成於該等最外墊且具有與該最外墊相同功能 的虛設擎,以及其中該发方將該等整連 接至該等最外引線的一對應引線。 17. 如申請專利範圍第13項所述之半導體1C裝置,其中 *· 該基體係一引線框架。 18. 如申請專利範圍第17項所述之半導體1C裝置,其係 QFP、TQFP、PLCC、SOP 或 TSOP 的其中之一。 19. 如申請專利範圍第13項所述之半導體1C.裝置,其中 該基體係一印刷電路板,該印刷電路板係由一絕緣詉脂 :: 基體、一在該樹脂基體上的晶粒墊、在該樹脂基體上的 引線以及透過穿透該樹脂基體的孔所組成。 經濟部中央標隼局員工消費合作社印製 . 20.如申請專利範圍第19項所述之半導體1C裝置,其係 , 一 BGA封裝。 21.—種半體積體電路(1C)裝置,包含有: 一半導體1C晶片,有一具多數面的主動表面,.及 多數個沿著該等面形成於該主動表面上的黏接墊; 一具有多數條向該晶片延伸且遠離該晶片的 -27- 本紙浪尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 煩%明示平卞月多3、所提之 經濟部智慧財產局員工消費合作社印製 .务J0E.-H4#•無變烫實質内餐_准予修正ο W年f月3曰修讀·齡I ________________D8_ •'申請專利範園 ^ 引線;. 多數條黏接線,用以將該等引線電氣地連接至該等 對應黏接墊的一對應黏接塾;以及 一封裝體,用以封裝該晶片、該基體及該等黏接線 ,以及係由一模穴中之一流體模塑樹脂所製成; 其中該等盈接線包含有_革少一條葶二黏接線及至少 一倏墓黏接線,該等I仝I接益具有律少於該等第一 霉占療線之高度且相鄰設置於該等第一黏接線;以及其中 該等黏接線更包含有墓少一I具有一與該等I一龜蓋線 想_M直·度的處設.舉接緣且設置於該等·篇二黏_接」象與其等 之相鄰第二黏後齓。 22. 如申請專利範園第21項所述之半導體ic裝置,其中 該基體更包含一該晶片黏結於上的晶粒墊以及至少一圍 繞該晶粒墊設置的電源端或接地端;以及其中該等第二 黏接線將該晶片之該黏接墊連接至該等端。 23. 如申請專利範圍第22項所述之半導體1C裝置,其中 該等第一黏接線更包含數條確實黏接線’該等確實黏接 線係遠離其相鄰第一黏接線一大於其餘第一黏接線所具 有的間隔;其中該晶粒墊在其中一表面上設有數個絕緣 墊;以及其中該等虚設黏接線將該等絕緣墊連接至與該 等確實黏接線連接的引線。 24. 如申請專利範圍第22項所述之半導體ic裝置,其中 該晶粒墊在其中一表面上更設有數個絕緣墊;以及其更 包含設於該等引線之間的虚設引線,該等虛設引線並不 ___ -28- 本紙張尺度適用中關家操準(CNS )⑽桃(21GX297公着j— — --- (請先閲讀背面之注$項再填寫本頁} 訂』 V 々、申請專利範圍 A8 拥 C8 D8 與外部裝置電氣地連接;以及其中該等虚設黏接線將該 等絕緣墊連接至該等虚設黏接線之一對應黏接線。 ---------裝-- Γ - -(請先閲讀背面之注意事項再填寫本頁) mr ^ 經濟部中央標準局員工消費合作社印製 本紙張尺度適用t國國家標準(CNS ) A4規格(210X297公釐)
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DE19801252C1 (de) 1999-06-10
KR100265461B1 (ko) 2000-09-15
FR2771550B1 (fr) 2003-01-24
CN1218290A (zh) 1999-06-02
US6031281A (en) 2000-02-29
KR19990041097A (ko) 1999-06-15
JPH11176865A (ja) 1999-07-02
JP3621819B2 (ja) 2005-02-16
FR2771550A1 (fr) 1999-05-28

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