JP2637247B2 - 樹脂封止型半導体装置 - Google Patents

樹脂封止型半導体装置

Info

Publication number
JP2637247B2
JP2637247B2 JP1236408A JP23640889A JP2637247B2 JP 2637247 B2 JP2637247 B2 JP 2637247B2 JP 1236408 A JP1236408 A JP 1236408A JP 23640889 A JP23640889 A JP 23640889A JP 2637247 B2 JP2637247 B2 JP 2637247B2
Authority
JP
Japan
Prior art keywords
inner lead
semiconductor substrate
resin
bed
thin metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1236408A
Other languages
English (en)
Other versions
JPH0399445A (ja
Inventor
哲也 長岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1236408A priority Critical patent/JP2637247B2/ja
Priority to US07/579,664 priority patent/US5045919A/en
Priority to DE69024731T priority patent/DE69024731T2/de
Priority to EP90117548A priority patent/EP0419941B1/en
Priority to KR1019900014334A priority patent/KR910007094A/ko
Publication of JPH0399445A publication Critical patent/JPH0399445A/ja
Priority to KR94002040U priority patent/KR940003288Y1/ko
Application granted granted Critical
Publication of JP2637247B2 publication Critical patent/JP2637247B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は、樹脂封止型半導体装置に係わり、特に、樹
脂封止工程における金属細線同士の接触を防止するもの
である。
（従来の技術） 半導体産業にあっては、Ｄ−RAMに代表されるように
集積度を向上する傾向にあると共に厳しい経済環境に備
えてコストダウン（Cost Down）が求められている外
に、市場の要求に応えるために半導体基板のシュリンク
（Shrink）方式も進められるのが現状である。ところ
で、リードフレームを利用して半導体素子を組立てる手
法も広く採用されており、ボール ボンディング（Ball
Bonding）工程及びトランスファーモールド（Transfer
Mold）法による樹脂封止工程などを経て樹脂封止型半
導体装置を製造していることは良く知られているところ
である。
ところで、主にプレス（Press）工程により形成する
リードフレームには、SIP（Single In Line Packag
e）、DIP（Dual In Line Package）及び両者の混合型用
の形式が利用されており、ここにマウントする半導体素
子を以後半導体基板と記載する。先ずリードフレームの
構造につい簡単に説明すると、形式により構造が相違す
るものの、支持体となる枠体を起点として複数のインナ
ーリード（樹脂封止工程後樹脂外に導出したものをアウ
ターリードと呼称する）が形成され、半導体基板をマウ
ントするベッド部を一部のインナーリードにより支持し
て設置するのが通常である。また、ベッド部は、通常ほ
ぼ直方体状に形成され、その周囲にインナーリードの遊
端が配置されるのが各形式を問わず行われている。各リ
ードフレームの材質としては、Fe、Fe−NiまたはCuやCu
合金などが利用されており、ベッド部に半導体基板をマ
ウントするのには、導電性接着剤、半田または共晶など
が適用される。更に、半導体基板に形成するボンディン
グパッド（Pad）は、Al−Si、Al−Si−CuなどのAl合金
またはAlで構成し、金属細線には、金、Al更に銅や銅合
金を取捨選択して利用している。ボールボンディング法
によりボンディングパッドに熱圧着する金属細線は、一
定のループ（Loop）をもって次のボンディング点である
インナーリードに移動してウエッジ（Wedge）ボンディ
ングされるが、機種によっては、このような一定のルー
プで張られた金属細線上により大きいループの金属細線
をボールディングにより形成するいわゆるターンオーバ
ボンディング（Turn Over Bonding）を行うこともあ
る。第１図には、ボンディングパッド１…を形成した半
導体基板２をベッド部にマウントし、更にインナーリー
ド３…との間を金属細線４…で接続した状態を上面図に
より示した。図では、矢印方向がゲル状樹脂の流入方向
を示していると共に、樹脂封止工程におけるゲートが矢
印の位置にほぼ相当する。
（発明が解決しようとする課題） 上記のように市場の要求に応るために半導体基板のシ
ュリンクが進められているためにボンディングパッドの
ピッチ（Pitch）は当然小さくなる。このピッチは、200
μｍ程度に今まで形成されており、160μｍ以下に形成
すると以下の現象が発生することが判明した。即ち、こ
のような条件下で樹脂封止工程を実施するとゲート（Ga
te）を介してキャビティ（Cavity）内に流入したゲル状
樹脂層により金属細線が押流されて、ボンディングパッ
ドまたは隣の金属細線に接触する事故が発生した。
特に、第１図に示したようにゲル状樹脂の注入口から
離れた位置Ａのベッド部の角部では、ボンディングパッ
ドを並べて形成した半導体基板の厚さ方向を構成する側
辺に入線する金属細線の角度が著しく鋭角になっている
ために、隣接する金属細線との距離が極めて短かく接触
し易い状態になっている。また、この付近は、ゲル状樹
脂に注入口付近よりも固化しかけているので、金属細線
に圧力が加わって流れる頻度が大きい。
本発明は、このように事情により成されたもので、特
に、金属細線の短絡事故を防止することを目的とするも
のである。
〔発明の構成〕
（課題を解決するための手段） 本発明に係る樹脂封止型半導体装置に関する第１の発
明は、直方体状の半導体基板と，前記半導体基板の各辺
に沿って設けられた複数のボンディングパッドと，前記
半導体基板が固定された直方体状のベッド部と，前記ベ
ッド部を取り囲むように配置された複数のインナーリー
ド部と，前記インナーリード部とボンディングパッド間
を接続する金属細線を封止する樹脂封止層とを備え，前
記樹脂封止層の樹脂注入口から離れた前記ベッド部の２
つの角部に最も近い位置に配置された前記インナーリー
ド部及びこれに隣接するインナーリード部間の間隔を、
その他のインナーリード部間の間隔より広く設定し、か
つ前記インナーリード部の遊端を、直方体状の前記ベッ
ド部の外周辺に対してそれぞれ鋭角を成すように放射状
に配列した点に特徴がある。
第２の発明は、前記ボンディングパッドは、前記半導
体基板の各辺に沿って一定の間隔で整列配置された点に
特徴がある。
第３の発明は、半導体基板が固定される直方体状のベ
ッド部と，前記ベッド部を取り囲むように配置され前記
半導体基板の各辺に沿って設けられる複数のボンディン
グパッドと金属細線を介して接続される複数のインナー
リード部とを備え，少なくとも隣接する前記ベッドの２
つの角部に再近接する位置に配置された前記インナーリ
ード部及びこれに隣接するインナーリード部間の間隔
を、その他のインナーリード部間の間隔より広く設定
し、かつ前記インナーリード部遊端を、前記直方体状の
ベッド部の外周辺に対しそれぞれ鋭角を成すように配列
した点に特徴がある。
（作 用） 半導体基板に所定の不純物を導入して形成する能動ま
たは受動領域に電気的に接続した電極即ちボンディング
パッドの間隔を160μｍ以下とした場合でも、金属細線
をボンディング手段により熱圧着できるように配慮した
のが本発明である。このボンディングパッドは、半導体
基板の端部付近に一定の間隔で整列して形成するのが通
常であるが、本発明では、上記のようにボンディングパ
ッドの間隔を160μｍ以下とした際に、半導体基板の厚
さ方向を構成する側辺に入線される金属細線の角度が著
しく鋭角になるのに備えて、金属細線のもう一方の端部
を接続するリードフレームのインナーリードの間隔を調
整する。具体的には、樹脂封止工程で、ゲートから離れ
た位置に配置される金属製ベッド部の角部に対応するリ
ードの間隔を他のそれより大きくすると、キャビティ内
に導入される溶融樹脂が金属細線間に殆ど流れなくなる
事実が確認された。本発明は、この事実を基に完成され
たもので、半導体基板のシュリンクを促進できるので、
コスト・ダウンに大きく貢献できるものである。
（実施例） 本発明に係わる一実施例を第２図を参照して説明す
る。即ち、例えばシリコン半導体基板10の端部付近に
は、上記のように所定の不純物を導入して設けた能動層
または受動層（図示せず）に電気的に接続した複数のボ
ンディングパッド11…を160μｍ以下のピッチ（Pitch）
で形成後、半導体基板即ち半導体素子は、リードフレー
ムを利用する組立工程を経て樹脂封止工程を実施するの
は、従来例と同様であるが、本発明の理解を得るために
簡単に説明する。今後記載する外囲器は、リードフレー
ムにマウントする半導体素子に所定のボンディング工程
を施し、更に樹脂封止工程を行って封止樹脂層外に導出
するインナーリード即アウターリードに所定のフォーミ
ング工程を終えたものを意味するものである。この所定
のフォーミング工程とは、プリント基板に設置した透孔
にアウターリードを挿入する型と、折曲げたアウターリ
ードをプリント基板の所定の位置に半田付けする型の両
方に適用可能とするものである。
従って、このような処理工程を終えた半導体基板10を
マウントするリードフレームとしては、ベッド（図示せ
ず）部付近にインナーリードの遊端が集められているDI
P、SIPまたは両者の混合型が利用可能である。このよう
なリードフレームにマウントした半導体基板10に形成し
た複数のボンディングパッド11…にAl、Au、銅または銅
合金から選択する一種類の金属細線12の一端を従来技術
欄に記載したようなボールボンディングまたは超音波並
用ボールボンディングにより接合し、他端はウエッジボ
ンディングによりリードフレームのインナーリードに接
合して、電気的な接続を行う。
このような工程を終えてから樹脂封止工程を専用の製
造装置により施す。この工程では、金型に形成したキャ
ビティにボンディング工程を終えたリードフレームにマ
ウントした半導体基板10をセット（Set）するが、第２
図に明らかなように、インナーリード13に特殊の配列が
施されている。即ち、図中矢印の位置がキャビティにお
けるゲートに対応する場所であり、ここから溶融ゲル状
樹脂が流入する形となる。
このゲートから離れて位置する半導体基板10即ち金属
製ベッドの角部Ａ付近のインナーリード13のピッチが他
のそれより大きく形成されている。直線状のオリフラ
（Olyfra）を一つまたは二つ形成したほぼ円形の半導体
ペレットに所定の能動領域または受動領域更には両領域
を多数個設け、同時に形成したダイシングライン（Dici
ng Line）に沿ってブレイキング（Braking）するので、
半導体基板10は直方体状に形成される。従って、半導体
基板10をマウントする金属製ベッド部もこれに相似形に
形成されているので、その角部が金属製ベッド部の角部
に相当する。このように、金属製ベッド部の角部に対応
するインナーリード13のピッチが大きくしていると、樹
脂封止工程における金属細線12のループの流れがＡでも
ほぼ発生しないことが判明した。この結果、樹脂封止工
程を終えた樹脂封止型半導体装置の歩留りが向上し、ひ
いては、そのシュリンクが完成されることになり、客先
の要求に応える製品のコンパクト（Compact）化が達成
された。なお、T.O.B（Turn Over Bonding）を行った樹
脂封止型半導体装置も本発明の対象となる。
〔発明の効果〕
以上詳述したように、本発明に係わる樹脂封止型半導
体装置では、組立工程に利用するリードフレームのイン
ナーリードのピッチを拡げたり縮めることにより、樹脂
封止工程における金属細線の流れが防止できる。しか
も、この現象は、ボンディングパッドのピッチが160μ
ｍ以下でも実現できるので半導体素子のシュリンクが達
成できる。
【図面の簡単な説明】
第１図は、従来の樹脂封止型半導体装置のマウント状態
を示す上面図、第２図は、本発明に係わる樹脂封止型半
導体装置のマウント状態を示す上面図である。 １、11:ボンディングパッド、 ２、10:半導体基板、 ３、13:インナーリード、 ４、12:金属細線。

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】直方体状の半導体基板と，前記半導体基板
    の各辺に沿ってほぼ一定の間隔で整列配置されたボンデ
    ィングパッドと，前記半導体基板が固定された直方体状
    のベッド部と，前記ベッド部を取り囲むように配列され
    た複数のインナーリード部と，前記インナーリード部と
    ボンディングパッド間を接続する金属細線と，これらを
    封止する樹脂封止層とを備え，前記樹脂封止層の樹脂注
    入口から離れた前記ベッド部の２つの角部に最も近い位
    置に配置された前記インナーリード部及びこれに隣接す
    るインナーリード部の間隔を、その他のインナーリード
    部の間隔より広く設定し、かつ前記インナーリード部を
    前記半導体基板を中心として放射状に配列したことを特
    徴とする樹脂封止型半導体装置。
  2. 【請求項２】半導体基板が固定される直方体状のベッド
    部と、このベッド部を取り囲むように配置され、前記半
    導体基板の各辺に沿ってほぼ一定の間隔で整列配置され
    たボンディングパッドと、金属細線を介して接続される
    インナーリード部とを備え、隣接する前記ベッド部の２
    つの角部に最も近い位置に配置された前記インナーリー
    ド部及びこれに隣接するインナーリード部間の間隔を、
    その他のインナーリード部間の間隔より広く設定し、か
    つ前記インナーリード部を前記半導体基板を中心として
    放射状に配置した樹脂封止用リードフレームであって、
    前記半導体基板、ボンディングパッド、ベッド部、イン
    ナーリード部及び金属細線を樹脂封止するに際して、隣
    接する前記ベッド部の２つの角部の最も近くに配置され
    た前記インナーリード部及びこれに隣接するインナーリ
    ード部に固定された前記金属細線の短絡を防止すること
    を特徴とする樹脂封止用リードフレーム。
JP1236408A 1989-09-12 1989-09-12 樹脂封止型半導体装置 Expired - Fee Related JP2637247B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP1236408A JP2637247B2 (ja) 1989-09-12 1989-09-12 樹脂封止型半導体装置
US07/579,664 US5045919A (en) 1989-09-12 1990-09-10 Plastic packaged semiconductor device having bonding wires which are prevented from coming into contact with each other in plastic sealing step
DE69024731T DE69024731T2 (de) 1989-09-12 1990-09-12 Verfahren zur Herstellung einer plastikumhüllten Halbleiteranordnung
EP90117548A EP0419941B1 (en) 1989-09-12 1990-09-12 Method of producing a plastic packaged semiconductor device
KR1019900014334A KR910007094A (ko) 1989-09-12 1990-09-12 수지밀봉형 반도체장치
KR94002040U KR940003288Y1 (en) 1989-09-12 1994-02-03 Plastic packaged semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1236408A JP2637247B2 (ja) 1989-09-12 1989-09-12 樹脂封止型半導体装置

Publications (2)

Publication Number Publication Date
JPH0399445A JPH0399445A (ja) 1991-04-24
JP2637247B2 true JP2637247B2 (ja) 1997-08-06

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US (1) US5045919A (ja)
EP (1) EP0419941B1 (ja)
JP (1) JP2637247B2 (ja)
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DE (1) DE69024731T2 (ja)

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EP0078606A3 (en) * 1981-11-02 1985-04-24 Texas Instruments Incorporated A semiconductor assembly with wire support
JPS6046041A (ja) * 1983-08-24 1985-03-12 Nec Corp 半導体装置
JPS60171734A (ja) * 1984-02-17 1985-09-05 Hitachi Ltd 半導体装置
JPS62500338A (ja) * 1984-09-27 1987-02-05 モトロ−ラ・インコ−ポレ−テッド 支持リ−ドの改良された構造をもつリ−ドフレ−ムおよびこれを用いる半導体装置
JPS6195559A (ja) * 1984-10-17 1986-05-14 Hitachi Ltd リ−ドフレ−ム及びそれを用いた半導体装置
JPS63126257A (ja) * 1986-11-17 1988-05-30 Hitachi Ltd 半導体装置
JPS63239831A (ja) * 1987-03-27 1988-10-05 Toshiba Corp 半導体装置の製造方法
JPH0216565A (ja) * 1988-07-05 1990-01-19 Mitsubishi Electric Corp 感光性樹脂組成物
JPH01315149A (ja) * 1988-08-05 1989-12-20 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0399445A (ja) 1991-04-24
EP0419941A3 (en) 1992-10-07
DE69024731T2 (de) 1996-06-27
KR910007094A (ko) 1991-04-30
US5045919A (en) 1991-09-03
EP0419941A2 (en) 1991-04-03
EP0419941B1 (en) 1996-01-10
DE69024731D1 (de) 1996-02-22

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