TW368755B - Semiconductor nonvolatile memory device - Google Patents

Semiconductor nonvolatile memory device

Info

Publication number
TW368755B
TW368755B TW083104845A TW83104845A TW368755B TW 368755 B TW368755 B TW 368755B TW 083104845 A TW083104845 A TW 083104845A TW 83104845 A TW83104845 A TW 83104845A TW 368755 B TW368755 B TW 368755B
Authority
TW
Taiwan
Prior art keywords
δvth
memory device
nonvolatile memory
semiconductor nonvolatile
pulse
Prior art date
Application number
TW083104845A
Other languages
English (en)
Inventor
Toshihiro Tanaka
Masataka Kato
Hitoshi Kume
Tetsuo Adachi
Keisuke Ogura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW368755B publication Critical patent/TW368755B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
TW083104845A 1993-09-06 1994-05-27 Semiconductor nonvolatile memory device TW368755B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22114393A JPH0773685A (ja) 1993-09-06 1993-09-06 半導体不揮発性記憶装置

Publications (1)

Publication Number Publication Date
TW368755B true TW368755B (en) 1999-09-01

Family

ID=16762146

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104845A TW368755B (en) 1993-09-06 1994-05-27 Semiconductor nonvolatile memory device

Country Status (5)

Country Link
US (1) US5467309A (zh)
JP (1) JPH0773685A (zh)
KR (1) KR100332001B1 (zh)
CN (1) CN1044295C (zh)
TW (1) TW368755B (zh)

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JP3737525B2 (ja) * 1994-03-11 2006-01-18 株式会社東芝 半導体記憶装置
US5636166A (en) * 1995-12-05 1997-06-03 Micron Quantum Devices, Inc. Apparatus for externally timing high voltage cycles of non-volatile memory system
JP3200012B2 (ja) * 1996-04-19 2001-08-20 株式会社東芝 記憶システム
US5870407A (en) * 1996-05-24 1999-02-09 Advanced Micro Devices, Inc. Method of screening memory cells at room temperature that would be rejected during hot temperature programming tests
US5748538A (en) * 1996-06-17 1998-05-05 Aplus Integrated Circuits, Inc. OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array
FR2754100B1 (fr) * 1996-09-30 1998-11-20 Sgs Thomson Microelectronics Memoire a acces serie avec securisation de l'ecriture
JPH10222994A (ja) * 1997-02-06 1998-08-21 Mitsubishi Electric Corp 半導体記憶装置の読み出し電圧制御装置
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KR100521320B1 (ko) * 1997-11-25 2006-01-12 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
KR100290481B1 (ko) 1998-12-28 2001-06-01 박종섭 플래쉬 메모리 장치용 다단계 펄스 발생 회로
US6147906A (en) * 1999-10-14 2000-11-14 Advanced Micro Devices, Inc. Method and system for saving overhead program time in a memory device
JP2002025282A (ja) * 2000-07-12 2002-01-25 Hitachi Ltd 不揮発性半導体記憶装置
JP3922516B2 (ja) 2000-09-28 2007-05-30 株式会社ルネサステクノロジ 不揮発性メモリと不揮発性メモリの書き込み方法
TW561491B (en) * 2001-06-29 2003-11-11 Toshiba Corp Semiconductor memory device
JP3965287B2 (ja) 2001-10-09 2007-08-29 シャープ株式会社 不揮発性半導体記憶装置およびその書き込み時間決定方法
JP4071967B2 (ja) * 2002-01-17 2008-04-02 株式会社ルネサステクノロジ 不揮発性半導体記憶装置及びそのデータ消去方法
JP4187197B2 (ja) * 2002-11-07 2008-11-26 シャープ株式会社 半導体メモリ装置の制御方法
US7009883B2 (en) * 2003-02-27 2006-03-07 Broadcom Corporation Automatic programming time selection for one time programmable memory
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
KR100558004B1 (ko) * 2003-10-22 2006-03-06 삼성전자주식회사 게이트 전극과 반도체 기판 사이에 전하저장층을 갖는비휘발성 메모리 소자의 프로그램 방법
US7038945B2 (en) * 2004-05-07 2006-05-02 Micron Technology, Inc. Flash memory device with improved programming performance
KR100635203B1 (ko) * 2004-05-14 2006-10-16 에스티마이크로일렉트로닉스 엔.브이. 플래쉬 메모리 장치 및 그 구동 방법
FR2874449B1 (fr) * 2004-08-17 2008-04-04 Atmel Corp Circuit de retard de programme auto-adaptatif pour memoires programmables
EP1782426B1 (en) * 2004-08-17 2015-10-28 Atmel Corporation Self-adaptive program delay circuitry for programmable memories
US7342833B2 (en) * 2005-08-23 2008-03-11 Freescale Semiconductor, Inc. Nonvolatile memory cell programming
US7327608B2 (en) * 2006-03-28 2008-02-05 Sandisk Corporation Program time adjustment as function of program voltage for improved programming speed in programming method
JP2010508615A (ja) * 2006-10-30 2010-03-18 サンディスク コーポレイション 不揮発性メモリに用いられる最高マルチレベル状態の高速プログラミング
KR100780773B1 (ko) * 2006-11-03 2007-11-30 주식회사 하이닉스반도체 플래시 메모리소자의 프로그램 시작 바이어스 설정방법 및이를 이용한 프로그램 방법
JP2008277530A (ja) * 2007-04-27 2008-11-13 Renesas Technology Corp 不揮発性半導体記憶装置
KR101343597B1 (ko) * 2007-08-09 2013-12-20 삼성전자주식회사 낸드 플래시 메모리 장치 및 그것의 프로그램 방법
KR101401558B1 (ko) * 2007-08-20 2014-06-09 삼성전자주식회사 플래시 메모리 장치, 그것의 프로그램 및 소거 방법들,그리고 그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
KR101373186B1 (ko) * 2007-08-22 2014-03-13 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법들, 그리고그것을 포함하는 메모리 시스템 및 컴퓨터 시스템
US7916543B2 (en) * 2007-10-22 2011-03-29 Micron Technology, Inc. Memory cell operation
JP2012069199A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体記憶装置
US8837219B2 (en) 2011-09-30 2014-09-16 Ememory Technology Inc. Method of programming nonvolatile memory
DE102012109612A1 (de) * 2011-10-13 2013-04-18 Samsung Electronics Co., Ltd. Nichtflüchtige Speichervorrichtung, Programmierungsverfahren für nichtflüchtige Speichervorrichtungen und Speichersystem, das eine nichtflüchtiger Speichervorrichtung umfasst
KR101926860B1 (ko) * 2012-02-07 2018-12-07 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
US9442842B2 (en) * 2013-08-19 2016-09-13 Sandisk Technologies Llc Memory system performance configuration
US9728278B2 (en) 2014-10-24 2017-08-08 Micron Technology, Inc. Threshold voltage margin analysis
KR102496678B1 (ko) * 2016-02-19 2023-02-07 에스케이하이닉스 주식회사 반도체 메모리 장치 및 이의 동작 방법
CN105976867A (zh) * 2016-07-06 2016-09-28 北京兆易创新科技股份有限公司 一种存储单元的擦除方法

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US5034922A (en) * 1987-12-21 1991-07-23 Motorola, Inc. Intelligent electrically erasable, programmable read-only memory with improved read latency
JPH02126498A (ja) * 1988-07-08 1990-05-15 Hitachi Ltd 不揮発性半導体記憶装置
JP2654596B2 (ja) * 1989-02-06 1997-09-17 株式会社日立製作所 不揮発性記憶装置
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPH0668686A (ja) * 1992-08-21 1994-03-11 Hitachi Ltd 半導体不揮発性記憶装置

Also Published As

Publication number Publication date
JPH0773685A (ja) 1995-03-17
CN1044295C (zh) 1999-07-21
KR950009730A (ko) 1995-04-24
CN1120231A (zh) 1996-04-10
KR100332001B1 (ko) 2002-08-14
US5467309A (en) 1995-11-14

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