TW263562B - Wafer burn-in test circuit of a semiconductor memory device - Google Patents

Wafer burn-in test circuit of a semiconductor memory device

Info

Publication number
TW263562B
TW263562B TW084105680A TW84105680A TW263562B TW 263562 B TW263562 B TW 263562B TW 084105680 A TW084105680 A TW 084105680A TW 84105680 A TW84105680 A TW 84105680A TW 263562 B TW263562 B TW 263562B
Authority
TW
Taiwan
Prior art keywords
word line
burn
boosting voltage
memory device
semiconductor memory
Prior art date
Application number
TW084105680A
Other languages
English (en)
Inventor
Lee Jae-Hyeong
Seok Yong-Sik
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW263562B publication Critical patent/TW263562B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW084105680A 1994-06-08 1995-06-06 Wafer burn-in test circuit of a semiconductor memory device TW263562B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940012847A KR0119887B1 (ko) 1994-06-08 1994-06-08 반도체 메모리장치의 웨이퍼 번-인 테스트 회로

Publications (1)

Publication Number Publication Date
TW263562B true TW263562B (en) 1995-11-21

Family

ID=19384873

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084105680A TW263562B (en) 1994-06-08 1995-06-06 Wafer burn-in test circuit of a semiconductor memory device

Country Status (6)

Country Link
US (1) US5590079A (zh)
JP (1) JP2738517B2 (zh)
KR (1) KR0119887B1 (zh)
CN (1) CN1053757C (zh)
DE (1) DE19520630A1 (zh)
TW (1) TW263562B (zh)

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KR0172344B1 (ko) * 1995-09-15 1999-03-30 김광호 웨이퍼 번인 테스트회로 및 그 방법
KR0183857B1 (ko) * 1996-05-17 1999-04-15 김광호 반도체 메모리 장치의 번인 스트레스 제어 회로
KR100455731B1 (ko) * 1996-05-22 2004-12-31 주식회사 하이닉스반도체 웨이퍼번-인테스트장치
KR100206710B1 (ko) 1996-09-23 1999-07-01 윤종용 반도체 메모리 장치의 웨이퍼 번인 테스트 회로
KR100220950B1 (ko) * 1996-11-06 1999-09-15 김영환 웨이퍼 번인회로
KR100228530B1 (ko) * 1996-12-23 1999-11-01 윤종용 반도체 메모리 장치의 웨이퍼 번인 테스트회로
US5898706A (en) * 1997-04-30 1999-04-27 International Business Machines Corporation Structure and method for reliability stressing of dielectrics
US5877993A (en) * 1997-05-13 1999-03-02 Micron Technology, Inc. Memory circuit voltage regulator
TW333741B (en) * 1997-06-21 1998-06-11 United Microelectronics Corp The pre-burn in DRAM module and module circuit board
JPH1145598A (ja) * 1997-07-25 1999-02-16 Nec Corp 半導体記憶装置
SG121684A1 (en) * 1997-09-03 2006-05-26 United Microelectronics Corp Preburn-in dynamic random access memory module andpreburn-in circuit board thereof
US6034913A (en) * 1997-09-19 2000-03-07 Siemens Microelectronics, Inc. Apparatus and method for high-speed wordline driving with low area overhead
KR100257580B1 (ko) * 1997-11-25 2000-06-01 윤종용 반도체 메모리 장치의 번-인 제어 회로
KR100498417B1 (ko) * 1997-12-22 2005-09-08 삼성전자주식회사 반도체메모리장치의로우디코더
US6285608B1 (en) * 1998-03-20 2001-09-04 Micron Technology, Inc. Method and apparatus for using supply voltage for testing in semiconductor memory devices
KR100278926B1 (ko) 1998-05-25 2001-01-15 김영환 풀리 온 칩 웨이퍼 레벨 번-인 테스트 회로 및그 방법
US6628564B1 (en) * 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
US6122760A (en) * 1998-08-25 2000-09-19 International Business Machines Corporation Burn in technique for chips containing different types of IC circuitry
US6055199A (en) * 1998-10-21 2000-04-25 Mitsubishi Denki Kabushiki Kaisha Test circuit for a semiconductor memory device and method for burn-in test
US6233184B1 (en) 1998-11-13 2001-05-15 International Business Machines Corporation Structures for wafer level test and burn-in
US6327682B1 (en) * 1999-03-22 2001-12-04 Taiwan Semiconductor Manufacturing Company Wafer burn-in design for DRAM and FeRAM devices
KR100334532B1 (ko) * 1999-04-03 2002-05-02 박종섭 워드라인 구동장치
KR100287191B1 (ko) * 1999-04-07 2001-04-16 윤종용 웨이퍼 번인시 워드라인들을 충분히 구동시키는 반도체 메모리장치
US6453258B1 (en) 1999-12-17 2002-09-17 International Business Machines Corporation Optimized burn-in for fixed time dynamic logic circuitry
US6414890B2 (en) * 1999-12-27 2002-07-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device capable of reliably performing burn-in test at wafer level
JP4727785B2 (ja) * 2000-01-26 2011-07-20 富士通セミコンダクター株式会社 半導体記憶装置及び半導体記憶装置のワード線欠陥検出方法
US6275442B1 (en) 2000-05-16 2001-08-14 Hewlett-Packard Company Address decoder and method for ITS accelerated stress testing
KR100464946B1 (ko) * 2000-12-30 2005-01-05 주식회사 하이닉스반도체 번-인 테스트 방법
JP2003109398A (ja) * 2001-09-28 2003-04-11 Mitsubishi Electric Corp 半導体記憶装置
DE10245152B4 (de) * 2002-09-27 2013-10-10 Infineon Technologies Ag Integrierte Testschaltungsanordnung und Testverfahren
JP4314056B2 (ja) * 2003-04-17 2009-08-12 パナソニック株式会社 半導体記憶装置
US6910162B2 (en) * 2003-05-12 2005-06-21 Kingston Technology Corp. Memory-module burn-in system with removable pattern-generator boards separated from heat chamber by backplane
CN1330971C (zh) * 2003-06-20 2007-08-08 统宝光电股份有限公司 老化测试系统
JP4516294B2 (ja) * 2003-09-30 2010-08-04 パナソニック株式会社 半導体装置及び半導体装置の製造方法
US7271245B2 (en) * 2004-02-13 2007-09-18 The Scripps Research Institute Methods and compositions for inhibition of metastasis
JP4562515B2 (ja) * 2004-12-22 2010-10-13 ルネサスエレクトロニクス株式会社 論理回路及びワードドライバ回路
KR100845774B1 (ko) * 2006-10-13 2008-07-14 주식회사 하이닉스반도체 반도체 메모리 장치 및 이를 이용한 전압 제어 방법
KR100873613B1 (ko) * 2006-11-14 2008-12-12 주식회사 하이닉스반도체 반도체 메모리 장치의 전압 생성 회로 및 방법
TWI340392B (en) * 2007-06-29 2011-04-11 Nanya Technology Corp Method for testing semiconductor memory
JP6222423B2 (ja) * 2013-03-28 2017-11-01 セイコーエプソン株式会社 物理量センサー、電子機器及び移動体
CN105632383B (zh) * 2016-01-11 2018-09-11 京东方科技集团股份有限公司 一种测试电路、测试方法、显示面板及显示装置
CN106569120B (zh) * 2016-10-26 2019-01-22 宁波大学 一种对温度不敏感的检测集成电路老化状态传感器
KR102471500B1 (ko) * 2018-03-12 2022-11-28 에스케이하이닉스 주식회사 반도체 장치 및 이를 포함하는 테스트 시스템
CN114487790B (zh) * 2022-04-06 2022-07-22 海光信息技术股份有限公司 老化监测电路、模组、方法及芯片

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950014099B1 (ko) * 1992-06-12 1995-11-21 가부시기가이샤 도시바 반도체 기억장치
KR950003014B1 (ko) * 1992-07-31 1995-03-29 삼성전자 주식회사 반도체 메모리 장치의 번-인 테스트회로 및 번-인 테스트방법
KR960005387Y1 (ko) * 1992-09-24 1996-06-28 문정환 반도체 메모리의 번 인 테스트(Burn-In Test) 장치
JP2768172B2 (ja) * 1992-09-30 1998-06-25 日本電気株式会社 半導体メモリ装置

Also Published As

Publication number Publication date
DE19520630A1 (de) 1996-03-14
KR0119887B1 (ko) 1997-10-30
CN1053757C (zh) 2000-06-21
US5590079A (en) 1996-12-31
JPH0855497A (ja) 1996-02-27
JP2738517B2 (ja) 1998-04-08
CN1116710A (zh) 1996-02-14
KR960002369A (ko) 1996-01-26

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MM4A Annulment or lapse of patent due to non-payment of fees