TW236004B - - Google Patents

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Publication number
TW236004B
TW236004B TW81105826A TW81105826A TW236004B TW 236004 B TW236004 B TW 236004B TW 81105826 A TW81105826 A TW 81105826A TW 81105826 A TW81105826 A TW 81105826A TW 236004 B TW236004 B TW 236004B
Authority
TW
Taiwan
Application number
TW81105826A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW236004B publication Critical patent/TW236004B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/3154—Of fluorinated addition polymer from unsaturated monomers
TW81105826A 1991-06-28 1992-07-23 TW236004B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72277391A 1991-06-28 1991-06-28

Publications (1)

Publication Number Publication Date
TW236004B true TW236004B (zh) 1994-12-11

Family

ID=24903332

Family Applications (1)

Application Number Title Priority Date Filing Date
TW81105826A TW236004B (zh) 1991-06-28 1992-07-23

Country Status (7)

Country Link
US (2) US5744537A (zh)
EP (1) EP0522990B1 (zh)
JP (1) JP2643056B2 (zh)
KR (1) KR960002241B1 (zh)
DE (1) DE69214035T2 (zh)
SG (1) SG43691A1 (zh)
TW (1) TW236004B (zh)

Families Citing this family (145)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993024860A1 (en) * 1992-06-02 1993-12-09 Mitsubishi Kasei Corporation Composition for forming anti-reflection film on resist and pattern formation method
JP3416196B2 (ja) * 1992-06-02 2003-06-16 シップレーカンパニー エル エル シー レジスト表面反射防止膜形成性組成物及びパターン形成方法
DE69323812T2 (de) * 1992-08-14 1999-08-26 Japan Synthetic Rubber Co Ltd Reflexionsverhindernder Film und Verfahren zur Herstellung von Resistmustern
WO1994012912A1 (en) * 1992-11-25 1994-06-09 Hoechst Celanese Corporation Metal ion reduction in bottom anti-reflective coatings for photoresists
JPH06273926A (ja) * 1993-03-23 1994-09-30 Shin Etsu Chem Co Ltd 反射防止膜材料
SG52630A1 (en) * 1993-10-12 1998-09-28 Hoechst Ag Top anti-reflective coating films
JP3447342B2 (ja) * 1993-12-01 2003-09-16 シップレーカンパニー エル エル シー 表面反射防止塗布組成物
JP3344063B2 (ja) * 1994-02-24 2002-11-11 ジェイエスアール株式会社 塩基遮断性反射防止膜およびレジストパターンの形成方法
JP2878150B2 (ja) * 1994-04-27 1999-04-05 東京応化工業株式会社 レジスト用塗布液およびこれを用いたレジスト材料
US5631314A (en) * 1994-04-27 1997-05-20 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition
JPH07333855A (ja) * 1994-06-10 1995-12-22 Mitsubishi Chem Corp 反射防止塗布組成物及びパターン形成方法
JP3491978B2 (ja) * 1994-08-01 2004-02-03 シップレーカンパニー エル エル シー 表面反射防止塗布組成物
US5611850A (en) * 1995-03-23 1997-03-18 Mitsubishi Chemical Corporation Composition for anti-reflective coating on resist
JP3510003B2 (ja) * 1995-05-01 2004-03-22 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
JPH08305022A (ja) * 1995-05-08 1996-11-22 Mitsubishi Chem Corp リソグラフィーにおける性能向上用塗布組成物および当該塗布組成物を使用したパターン形成方法
JP3630471B2 (ja) * 1995-05-08 2005-03-16 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． リソグラフィーにおける性能向上用塗布組成物および当該塗布組成物を使用したパターン形成方法
JP3284056B2 (ja) * 1995-09-12 2002-05-20 株式会社東芝 基板処理装置及びパターン形成方法
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US6042992A (en) * 1996-03-07 2000-03-28 Clariant Finance (Bvi) Limited Bottom antireflective coatings through refractive index modification by anomalous dispersion
TW337591B (en) * 1996-04-15 1998-08-01 Shinetsu Chem Ind Co Anti-reflection coating material
JP3384534B2 (ja) * 1996-04-15 2003-03-10 信越化学工業株式会社 反射防止膜材料
JP3694703B2 (ja) * 1996-04-25 2005-09-14 Ａｚエレクトロニックマテリアルズ株式会社 反射防止コーティング用組成物
US5846650A (en) * 1996-05-10 1998-12-08 Minnesota Mining And Manufacturing Company Anti-reflective, abrasion resistant, anti-fogging coated articles and methods
US5733714A (en) * 1996-09-30 1998-03-31 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6274295B1 (en) 1997-03-06 2001-08-14 Clariant Finance (Bvi) Limited Light-absorbing antireflective layers with improved performance due to refractive index optimization
US5994430A (en) * 1997-04-30 1999-11-30 Clariant Finance Bvi) Limited Antireflective coating compositions for photoresist compositions and use thereof
US5981145A (en) * 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
JPH1184640A (ja) * 1997-09-05 1999-03-26 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液
JP3673399B2 (ja) 1998-06-03 2005-07-20 クラリアント インターナショナル リミテッド 反射防止コーティング用組成物
JP3979553B2 (ja) * 1998-06-12 2007-09-19 東京応化工業株式会社 反射防止膜形成用塗布液組成物およびこれを用いたレジスト材料
US6225215B1 (en) 1999-09-24 2001-05-01 Lsi Logic Corporation Method for enhancing anti-reflective coatings used in photolithography of electronic devices
JP2001142221A (ja) 1999-11-10 2001-05-25 Clariant (Japan) Kk 反射防止コーティング用組成物
KR100400331B1 (ko) * 1999-12-02 2003-10-01 주식회사 하이닉스반도체 포토레지스트 오버코팅용 조성물 및 이를 이용한포토레지스트 패턴 형성방법
JP2001281874A (ja) 2000-03-31 2001-10-10 Tokyo Ohka Kogyo Co Ltd リソグラフィー用反射防止膜形成用組成物およびこれを用いたレジスト積層体
US6527867B1 (en) * 2000-05-30 2003-03-04 Lsi Logic Corporation Method for enhancing anti-reflective coatings used in photolithography of electronic devices
JP3320402B2 (ja) * 2000-06-26 2002-09-03 クラリアント ジャパン 株式会社 現像欠陥防止プロセス及び材料
JP2002148820A (ja) 2000-11-15 2002-05-22 Clariant (Japan) Kk パターン形成方法及びこの方法に使用される処理剤
US6566021B2 (en) * 2001-07-26 2003-05-20 Micro Lithography, Inc. Fluoropolymer-coated photomasks for photolithography
US7105267B2 (en) * 2001-08-24 2006-09-12 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
US7303852B2 (en) * 2001-12-27 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
TWI273350B (en) * 2001-12-27 2007-02-11 Shinetsu Chemical Co Photoacid generating compounds, chemically amplified positive resist materials, and pattern forming method
US7078148B2 (en) 2002-06-03 2006-07-18 Jsr Corporation Radiation sensitive resin composition
JP3914468B2 (ja) * 2002-06-21 2007-05-16 Ａｚエレクトロニックマテリアルズ株式会社 現像欠陥防止プロセスおよびそれに用いる組成物
US7452655B2 (en) 2002-11-05 2008-11-18 Jsr Corporation Acrylic copolymer and radiation-sensitive resin composition
KR101119783B1 (ko) 2002-12-28 2012-03-23 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
EP1641848B1 (en) 2003-06-26 2007-08-22 JSR Corporation Photoresist polymer compositions
KR100586541B1 (ko) * 2003-07-16 2006-06-07 주식회사 하이닉스반도체 유기 반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
KR100564430B1 (ko) * 2003-07-16 2006-03-28 주식회사 하이닉스반도체 유기 반사 방지막 중합체, 이의 제조 방법 및 이를함유하는 반사 방지막 조성물
KR100586542B1 (ko) * 2003-07-31 2006-06-07 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조 방법 및 이를포함하는 반사방지막 조성물
KR101109798B1 (ko) 2003-08-05 2012-03-13 제이에스알 가부시끼가이샤 아크릴계 중합체 및 감방사선성 수지 조성물
US20050074688A1 (en) * 2003-10-03 2005-04-07 Toukhy Medhat A. Bottom antireflective coatings
JP4140506B2 (ja) 2003-10-28 2008-08-27 Ｊｓｒ株式会社 感放射線性樹脂組成物
CA2544209C (en) 2003-10-28 2011-10-18 Sachem, Inc. Cleaning solutions and etchants and methods for using same
JP4400572B2 (ja) * 2003-11-19 2010-01-20 ダイキン工業株式会社 レジスト積層体の形成方法
JP4769455B2 (ja) * 2003-12-30 2011-09-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． コーティング組成物
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
KR100574491B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
KR100960838B1 (ko) * 2004-04-27 2010-06-07 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
JPWO2005108444A1 (ja) 2004-05-06 2008-03-21 Jsr株式会社 ラクトン系共重合体および感放射線性樹脂組成物
US7384878B2 (en) * 2004-05-20 2008-06-10 International Business Machines Corporation Method for applying a layer to a hydrophobic surface
US7335456B2 (en) * 2004-05-27 2008-02-26 International Business Machines Corporation Top coat material and use thereof in lithography processes
KR100598176B1 (ko) * 2004-07-06 2006-07-10 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
TWI323728B (en) * 2004-08-31 2010-04-21 Ind Tech Res Inst Polymer film with three-dimensional nanopores and fabrication method thereof
TWI288827B (en) * 2004-08-31 2007-10-21 Ind Tech Res Inst Three-dimensional nano-porous film and fabrication method thereof
KR100642416B1 (ko) * 2004-08-31 2006-11-03 주식회사 하이닉스반도체 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
KR100745064B1 (ko) * 2004-09-17 2007-08-01 주식회사 하이닉스반도체 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
US7320855B2 (en) * 2004-11-03 2008-01-22 International Business Machines Corporation Silicon containing TARC/barrier layer
KR100676885B1 (ko) * 2004-12-02 2007-02-23 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
KR100574496B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 상부반사방지막 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
US7288362B2 (en) 2005-02-23 2007-10-30 International Business Machines Corporation Immersion topcoat materials with improved performance
US7372610B2 (en) 2005-02-23 2008-05-13 Sage Electrochromics, Inc. Electrochromic devices and methods
US20060223001A1 (en) 2005-03-28 2006-10-05 Isao Nishimura Radiation-sensitive resin composition
US7812105B2 (en) 2005-05-11 2010-10-12 Jsr Corporation Compound, polymer, and radiation-sensitive composition
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
US20070117040A1 (en) * 2005-11-21 2007-05-24 International Business Machines Corporation Water castable-water strippable top coats for 193 nm immersion lithography
CN101313247A (zh) 2005-11-21 2008-11-26 Jsr株式会社 感辐射线性树脂组合物
EP1961739B1 (en) 2005-12-14 2012-10-17 JSR Corporation Novel compound, polymer, and resin composition
EP2003148B1 (en) 2006-03-31 2017-07-19 JSR Corporation Radiation-sensitive resin composition comprising a fluorine-containing polymer
US8945808B2 (en) * 2006-04-28 2015-02-03 International Business Machines Corporation Self-topcoating resist for photolithography
US8034532B2 (en) 2006-04-28 2011-10-11 International Business Machines Corporation High contact angle topcoat material and use thereof in lithography process
US7951524B2 (en) * 2006-04-28 2011-05-31 International Business Machines Corporation Self-topcoating photoresist for photolithography
US7435537B2 (en) * 2006-06-21 2008-10-14 International Business Machines Corporation Fluorinated half ester of maleic anhydride polymers for dry 193 nm top antireflective coating application
TWI432408B (zh) 2007-01-09 2014-04-01 Jsr Corp 化合物及敏輻射線性組成物
US8017310B2 (en) * 2007-02-02 2011-09-13 Asml Netherlands B.V. Lithographic method
KR101415430B1 (ko) 2007-02-22 2014-08-06 아사히 가라스 가부시키가이샤 반사 방지 코팅용 조성물
EP2128706A4 (en) 2007-03-16 2011-06-22 Jsr Corp METHOD FOR FORMING RESIST PATTERN AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN
JP4877388B2 (ja) 2007-03-28 2012-02-15 Ｊｓｒ株式会社 ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法
WO2009022540A1 (ja) 2007-08-13 2009-02-19 Jsr Corporation 化合物及び感放射線性組成物
JP5077355B2 (ja) 2007-10-01 2012-11-21 Ｊｓｒ株式会社 感放射線性組成物
KR20110022602A (ko) 2008-07-15 2011-03-07 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물 및 레지스트 패턴 형성 방법
TWI533082B (zh) * 2008-09-10 2016-05-11 Jsr股份有限公司 敏輻射性樹脂組成物
CN102150083B (zh) * 2008-09-12 2013-09-04 Jsr株式会社 放射线敏感性树脂组合物及抗蚀剂图案形成方法
TW201027247A (en) * 2008-10-21 2010-07-16 Jsr Corp Resist pattern coating agent and process for producing resist pattern using
US8273997B2 (en) * 2009-01-16 2012-09-25 The Boeing Company Antireflective apparatus with anisotropic capacitive circuit analog sheets
TWI503334B (zh) 2009-02-19 2015-10-11 Jsr Corp 聚合物及敏輻射線性組成物、及單體
CN102333797B (zh) 2009-02-23 2014-08-13 Jsr株式会社 化合物、含氟原子聚合物和放射线敏感性树脂组合物
TWI485511B (zh) 2009-03-27 2015-05-21 Jsr Corp 敏輻射線性樹脂組成物及聚合物
KR20100121427A (ko) 2009-05-07 2010-11-17 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
WO2010134477A1 (ja) 2009-05-18 2010-11-25 Jsr株式会社 感放射線性樹脂組成物及び化合物
JP5626207B2 (ja) 2009-06-04 2014-11-19 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
KR101368585B1 (ko) 2009-06-15 2014-02-28 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법, 화합물 및 중합체
JP5481979B2 (ja) * 2009-07-15 2014-04-23 Ｊｓｒ株式会社 感放射線性樹脂組成物及びそれに用いられる重合体
JP5655786B2 (ja) 2009-09-11 2015-01-21 Jsr株式会社 感放射線性組成物
EP2781959B1 (en) 2009-09-18 2019-04-24 JSR Corporation Radiation-sensitive resin composition, method for forming resist pattern, polymer and polymerizable compound
KR101706409B1 (ko) 2009-09-30 2017-02-13 제이에스알 가부시끼가이샤 중합체, 감방사선성 조성물 및 단량체, 및 그의 제조 방법
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JPWO2011125685A1 (ja) 2010-03-31 2013-07-08 Jsr株式会社 感放射線性樹脂組成物
US9040221B2 (en) 2010-05-20 2015-05-26 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound
US8580480B2 (en) 2010-07-27 2013-11-12 Jsr Corporation Radiation-sensitive resin composition, method for forming resist pattern, polymer and compound
JP5741297B2 (ja) 2010-08-05 2015-07-01 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法及び重合体
JP5729114B2 (ja) 2010-08-19 2015-06-03 Jsr株式会社 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
JP5062352B2 (ja) 2010-09-09 2012-10-31 Ｊｓｒ株式会社 レジストパターン形成方法
WO2012036250A1 (ja) 2010-09-17 2012-03-22 Jsr株式会社 感放射線性樹脂組成物、重合体及びレジストパターン形成方法
US8603726B2 (en) 2010-09-29 2013-12-10 Jsr Corporation Radiation-sensitive resin composition, polymer and compound
US8609319B2 (en) 2010-10-01 2013-12-17 Jsr Corporation Radiation-sensitive resin composition and resist film formed using the same
JP5716751B2 (ja) 2010-10-04 2015-05-13 Jsr株式会社 パターン形成方法及び感放射線性樹脂組成物
JP5940455B2 (ja) 2010-10-15 2016-06-29 Jsr株式会社 レジストパターン形成方法
JP5263453B2 (ja) 2010-10-19 2013-08-14 Ｊｓｒ株式会社 レジストパターン形成方法及び感放射線性樹脂組成物
WO2012053527A1 (ja) 2010-10-22 2012-04-26 Jsr株式会社 パターン形成方法及び感放射線性組成物
JP5754444B2 (ja) 2010-11-26 2015-07-29 Jsr株式会社 感放射線性組成物
WO2012101942A1 (ja) 2011-01-28 2012-08-02 Jsr株式会社 レジストパターン形成方法及び感放射線性樹脂組成物
JP5035466B1 (ja) 2011-02-04 2012-09-26 Ｊｓｒ株式会社 レジストパターン形成用感放射線性樹脂組成物
KR101953079B1 (ko) 2011-02-04 2019-02-27 제이에스알 가부시끼가이샤 포토레지스트 조성물
US8703401B2 (en) 2011-06-01 2014-04-22 Jsr Corporation Method for forming pattern and developer
JP5056974B1 (ja) 2011-06-01 2012-10-24 Ｊｓｒ株式会社 パターン形成方法及び現像液
JP6230217B2 (ja) 2011-09-06 2017-11-15 Jsr株式会社 レジストパターン形成方法
JP5900255B2 (ja) 2011-09-26 2016-04-06 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6065497B2 (ja) 2011-09-29 2017-01-25 Jsr株式会社 パターン形成方法及びポリシロキサン組成物
JP6060590B2 (ja) 2011-09-30 2017-01-18 Jsr株式会社 レジストパターン形成方法
WO2013141222A1 (ja) 2012-03-19 2013-09-26 Jsr株式会社 レジストパターン形成方法及びフォトレジスト組成物
US20140091379A1 (en) * 2012-10-01 2014-04-03 Applied Materials, Inc. Fluorocarbon coating having low refractive index
CN104870106B (zh) 2012-12-19 2018-05-11 3M创新有限公司 用于易于清洁的表面的涂料组合物和多层膜
WO2014148241A1 (ja) 2013-03-22 2014-09-25 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物の製造方法
JP6292059B2 (ja) 2013-08-13 2018-03-14 Jsr株式会社 基板の加工方法
WO2015046021A1 (ja) 2013-09-26 2015-04-02 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6303943B2 (ja) 2013-09-30 2018-04-04 Jsr株式会社 感放射線性樹脂組成物及びレジストパターン形成方法
JP6531397B2 (ja) 2014-03-07 2019-06-19 Jsr株式会社 パターン形成方法及びこれに用いられる組成物
JP6540293B2 (ja) 2014-07-10 2019-07-10 Jsr株式会社 レジストパターン微細化組成物及び微細パターン形成方法
US10216090B2 (en) 2015-03-31 2019-02-26 Jsr Corporation Pattern-forming method and composition for resist pattern-refinement
KR102638582B1 (ko) 2016-01-13 2024-02-21 제이에스알 가부시끼가이샤 감방사선성 수지 조성물, 레지스트 패턴 형성 방법 및 산 확산 제어제
US10416561B2 (en) * 2016-04-22 2019-09-17 AGC Inc. Coating composition, and process for producing photoresist laminate
WO2019172054A1 (ja) 2018-03-08 2019-09-12 Jsr株式会社 感放射線性樹脂組成物及びその製造方法並びにレジストパターン形成方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3882067A (en) * 1971-05-17 1975-05-06 Air Prod & Chem Floor polish
US4263009A (en) * 1978-01-31 1981-04-21 Milliken Research Corporation Method for improving the dyeing characteristics of textile materials containing polyolefin fibers and products produced thereby
DE2911503A1 (de) * 1979-03-23 1980-09-25 Siemens Ag Verfahren zur herstellung von strukturen aus positiv-photolackschichten ohne stoerende interferenzeffekte
ATE2980T1 (de) * 1979-09-21 1983-04-15 Censor Patent- Und Versuchs-Anstalt Verfahren zur uebertragung eines musters auf eine halbleiterscheibe.
US4555543A (en) * 1984-04-13 1985-11-26 Chemical Fabrics Corporation Fluoropolymer coating and casting compositions and films derived therefrom
US4557977A (en) * 1984-08-29 1985-12-10 Scm Corporation Polyvinylidene fluoride coatings
DE3439482A1 (de) * 1984-10-27 1986-05-07 Röhm GmbH, 6100 Darmstadt Verfahren zur beschichtung von substraten mit kratzfesten, nichtreflektierenden ueberzuegen
JPH071390B2 (ja) * 1985-08-19 1995-01-11 富士写真フイルム株式会社 複数の感光性平版印刷版の保管方法
JPS6262520A (ja) * 1985-09-13 1987-03-19 Hitachi Ltd パタ−ン形成方法
DE3533807A1 (de) * 1985-09-21 1987-03-26 Hoechst Ag Waessrige, pastoese ueberzugszusammensetzung und ihre verwendung
US4759990A (en) * 1985-11-27 1988-07-26 Yen Yung Tsai Composite optical element including anti-reflective coating
US4701390A (en) * 1985-11-27 1987-10-20 Macdermid, Incorporated Thermally stabilized photoresist images
JPS649618A (en) * 1987-07-02 1989-01-12 Matsushita Electric Ind Co Ltd Pattern formation
DE3744392A1 (de) * 1987-12-29 1989-07-13 Hoechst Ag Loesungen von copolymeren des typs tetrafluorethylen/ethylen
JPH02246108A (ja) * 1989-03-18 1990-10-01 Toshiba Corp レジストパターンの形成方法
US4970099A (en) * 1989-05-19 1990-11-13 E. I. Du Pont De Nemours And Company Perfluoropolymer coated pellicles
US5104692A (en) * 1990-04-20 1992-04-14 Pilkington Visioncare Holdings, Inc. Two-layer antireflective coating applied in solution
US5330883A (en) * 1992-06-29 1994-07-19 Lsi Logic Corporation Techniques for uniformizing photoresist thickness and critical dimension of underlying features

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US5744537A (en) 1998-04-28
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SG43691A1 (en) 1997-11-14
KR930001327A (ko) 1993-01-16
DE69214035D1 (de) 1996-10-31
EP0522990A1 (en) 1993-01-13
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