KR100745064B1 - 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 - Google Patents
상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 Download PDFInfo
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- KR100745064B1 KR100745064B1 KR1020040074762A KR20040074762A KR100745064B1 KR 100745064 B1 KR100745064 B1 KR 100745064B1 KR 1020040074762 A KR1020040074762 A KR 1020040074762A KR 20040074762 A KR20040074762 A KR 20040074762A KR 100745064 B1 KR100745064 B1 KR 100745064B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
- C09D133/04—Homopolymers or copolymers of esters
- C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/107—Polyamide or polyurethane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/11—Vinyl alcohol polymer or derivative
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/126—Halogen compound containing
Abstract
Description
Claims (16)
- 제 1 항에 있어서,상기 상부 반사방지막 중합체의 양을 기준으로, 0.05-5중량%의 비스설폰계 화합물을 포함하는 상부 반사방지막 조성물.
- 제 1 항에 있어서,상기 유기용매는 노말부탄올인 상부 반사방지막 조성물.
- 제 5 항에 있어서,상부 반사방지막 중합체의 양을 기준으로, 1,000-10,000 중량%의 노말부탄올에 상기 중합체를 용해시켜 제조되는 상부 반사방지막 조성물.
- 제 1 항에 있어서,산확산 방지제를 부가적으로 포함하는 상부 반사방지막 조성물.
- 제 7 항에 있어서,상기 산확산 방지제는 L-프롤린인 상부 반사방지막 조성물.
- 제 8 항에 있어서,상부 반사방지막 중합체의 양을 기준으로, 1-20중량%의 L-프롤린(L-proline)을 포함하는 상부 반사방지막 조성물.
- 삭제
- 제 1 항 내지 제 9 항 중 어느 한 항에 있어서,반도체 소자의 제조 공정에 사용되는 상부 반사방지막 조성물.
- (a) 소정의 하부 구조가 형성된 반도체 기판 상에 포토레지스트막을 도포하는 단계;(b) 상기 포토레지스트막의 상부에 제 1 항 내지 제 9 항 중 어느 한 항에 의한 상부 반사방지막 조성물을 도포하여, 상부 반사방지막을 형성하는 단계; 및(c) 상기 포토레지스트막에 대해 노광 및 현상을 진행하여 포토레지스트 패턴을 형성하는 단계를 포함하는 반도체 소자의 패턴 형성 방법.
- 제 12 항에 있어서,노광 전 및/또는 노광 후에 각각 베이크 공정을 부가적으로 진행하는 반도체 소자의 패턴 형성 방법.
- 제 13 항에 있어서,상기 베이크 공정은 70-200℃의 온도에서 수행되는 반도체 소자의 패턴 형성 방법.
- 제 12 항에 있어서,상기 노광 공정에서의 광원에 대한 매질이 물인 반도체 소자의 패턴 형성 방법.
- 제 12 항에 있어서,상기 현상 공정은 0.01 내지 5 중량%의 테트라메틸암모늄히드록사이드(TMAH) 수용액을 현상액으로 이용하여 진행되는 반도체 소자의 패턴 형성 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040074762A KR100745064B1 (ko) | 2004-09-17 | 2004-09-17 | 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 |
US11/158,627 US7419760B2 (en) | 2004-09-17 | 2005-06-22 | Top anti-reflective coating composition, method for forming the pattern of a semiconductor device using the same, and semiconductor device comprising the pattern |
JP2005202824A JP4573718B2 (ja) | 2004-09-17 | 2005-07-12 | 上部反射防止膜の組成物及びこれを用いた半導体素子のパターン形成方法 |
Applications Claiming Priority (1)
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KR1020040074762A KR100745064B1 (ko) | 2004-09-17 | 2004-09-17 | 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 |
Publications (2)
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KR20060025896A KR20060025896A (ko) | 2006-03-22 |
KR100745064B1 true KR100745064B1 (ko) | 2007-08-01 |
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KR1020040074762A KR100745064B1 (ko) | 2004-09-17 | 2004-09-17 | 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 |
Country Status (3)
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US (1) | US7419760B2 (ko) |
JP (1) | JP4573718B2 (ko) |
KR (1) | KR100745064B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100642416B1 (ko) * | 2004-08-31 | 2006-11-03 | 주식회사 하이닉스반도체 | 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법 |
JP2007206229A (ja) * | 2006-01-31 | 2007-08-16 | Renesas Technology Corp | レジストパターン形成方法および半導体装置の製造方法 |
JP5162934B2 (ja) * | 2007-03-23 | 2013-03-13 | Jsr株式会社 | 上層反射防止膜形成用組成物及びレジストパターン形成方法 |
JP4910829B2 (ja) * | 2007-03-28 | 2012-04-04 | Jsr株式会社 | 上層反射防止膜形成用組成物及びレジストパターン形成方法 |
KR101622797B1 (ko) * | 2008-07-17 | 2016-05-19 | 제이에스알 가부시끼가이샤 | 제1막의 개질 방법 및 이것에 이용하는 산 전사 수지막 형성용 조성물 |
JP2011017798A (ja) * | 2009-07-07 | 2011-01-27 | Jsr Corp | 酸転写性樹脂組成物、バイオチップの製造方法及びバイオチップ |
Citations (4)
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JPH0915850A (ja) * | 1995-06-28 | 1997-01-17 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JPH1135573A (ja) | 1997-07-24 | 1999-02-09 | Tokyo Ohka Kogyo Co Ltd | 新規ビススルホニルジアゾメタン |
JP2000171967A (ja) | 1998-09-28 | 2000-06-23 | Mitsubishi Chemicals Corp | 感放射線性組成物 |
JP2003020313A (ja) | 2001-07-09 | 2003-01-24 | Shin Etsu Chem Co Ltd | 脂環構造を有する新規エポキシ化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
Family Cites Families (13)
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DE69214035T2 (de) * | 1991-06-28 | 1997-04-10 | Ibm | Reflexionsverminderde Überzüge |
US5879853A (en) * | 1996-01-18 | 1999-03-09 | Kabushiki Kaisha Toshiba | Top antireflective coating material and its process for DUV and VUV lithography systems |
JPH1017623A (ja) * | 1996-07-05 | 1998-01-20 | Wako Pure Chem Ind Ltd | 新規水溶性ポリマー、これを用いた反射防止膜材料及びこれを用いたパターン形成方法 |
US6274295B1 (en) * | 1997-03-06 | 2001-08-14 | Clariant Finance (Bvi) Limited | Light-absorbing antireflective layers with improved performance due to refractive index optimization |
JP3925882B2 (ja) * | 1998-05-28 | 2007-06-06 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物 |
JP3967466B2 (ja) * | 1998-06-19 | 2007-08-29 | 信越化学工業株式会社 | 反射防止膜材料 |
JP2000275835A (ja) * | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | パターン形成方法 |
JP3672780B2 (ja) * | 1999-11-29 | 2005-07-20 | セントラル硝子株式会社 | ポジ型レジスト組成物およびパターン形成方法 |
US6623907B2 (en) * | 2000-02-04 | 2003-09-23 | Jsr Corporation | Radiation-sensitive resin composition |
JP4682345B2 (ja) * | 2000-09-18 | 2011-05-11 | Jsr株式会社 | 感放射線性組成物 |
US6878508B2 (en) * | 2001-07-13 | 2005-04-12 | Shin-Etsu Chemical Co., Ltd. | Resist patterning process |
JP3968509B2 (ja) * | 2002-04-30 | 2007-08-29 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP2003345026A (ja) * | 2002-05-24 | 2003-12-03 | Tokyo Ohka Kogyo Co Ltd | 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法 |
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2004
- 2004-09-17 KR KR1020040074762A patent/KR100745064B1/ko active IP Right Grant
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2005
- 2005-06-22 US US11/158,627 patent/US7419760B2/en active Active
- 2005-07-12 JP JP2005202824A patent/JP4573718B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0915850A (ja) * | 1995-06-28 | 1997-01-17 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
JPH1135573A (ja) | 1997-07-24 | 1999-02-09 | Tokyo Ohka Kogyo Co Ltd | 新規ビススルホニルジアゾメタン |
JP2000171967A (ja) | 1998-09-28 | 2000-06-23 | Mitsubishi Chemicals Corp | 感放射線性組成物 |
JP2003020313A (ja) | 2001-07-09 | 2003-01-24 | Shin Etsu Chem Co Ltd | 脂環構造を有する新規エポキシ化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060063104A1 (en) | 2006-03-23 |
US7419760B2 (en) | 2008-09-02 |
JP4573718B2 (ja) | 2010-11-04 |
KR20060025896A (ko) | 2006-03-22 |
JP2006085149A (ja) | 2006-03-30 |
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