TW201933496A - 在腔室調節中的抗氧化保護層 - Google Patents

在腔室調節中的抗氧化保護層 Download PDF

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TW201933496A
TW201933496A TW107144067A TW107144067A TW201933496A TW 201933496 A TW201933496 A TW 201933496A TW 107144067 A TW107144067 A TW 107144067A TW 107144067 A TW107144067 A TW 107144067A TW 201933496 A TW201933496 A TW 201933496A
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chamber
wafer processing
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protective layer
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賴鋒源
龔伯
袁光璧
許宸華
巴德里 凡拉德拉彥
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美商蘭姆研究公司
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Abstract

在一些範例中，一種用以調節晶圓處理腔室的方法包含：將該腔室中的壓力設定至預定壓力範圍內；將該腔室中的溫度設定至預定溫度範圍內；以及將一處理氣體混合物供應至該腔室內的氣體分配裝置。在該腔室內點燃電漿並監視該腔室中的狀態。基於偵測到所監視之狀態到達或越過閾值，而實行一腔室調節操作。該腔室調節操作可包含將一預調節薄膜沉積於該腔室的內表面上、將一碳氧化矽(SiCO)薄膜沉積於該預調節薄膜上、以及將一保護層沉積於該SiCO薄膜上。

Description

在腔室調節中的抗氧化保護層
本揭示內容大體上係關於晶圓處理腔室中的處理及調節循環，尤其係關於藉由在晶圓處理及腔室調節之操作中利用抗氧化保護層以減少缺陷及擴展批量大小。
此處所提供之先前技術說明係為了大體上介紹本發明之背景。在此先前技術章節中所敘述之範圍內之本案列名之發明人的成果、以及在申請時不適格作為先前技術之說明書的實施態樣，皆非有意地或暗示地被承認為對抗本發明之先前技術。
隨著時間推移，處理腔室中之重複的晶圓處理循環可能造成各種類型的薄膜累積於腔室壁上。隨著薄膜高度在反應腔室內的元件上逐漸地增長，薄膜應力可能增加，且累積的薄膜與腔室表面之間的附著力可能隨時間而顯著劣化。此附著力損失可能導致累積的薄膜之部分從腔室壁剝脫。當腔室內存在過多的薄膜累積時，累積的薄膜不會良好地附著於腔室壁且其開始剝離。剝離的薄膜之薄片及部分可能落於處理腔室中的晶圓上，並表現為粒子或缺陷。在一些情況下，富氧電漿使得薄膜剝脫加劇，因為首先其可能造成累積的薄膜收縮，而導致較高的張力，其次，其可能消耗在累積的薄膜中之碳物種，並因此導致薄膜附著力的進一步劣化。
在一些範例中，一種用以調節晶圓處理腔室的方法包含：將腔室中的壓力設定至預定壓力範圍內；將該腔室中的溫度設定至預定溫度範圍內；將一處理氣體混合物供應至該腔室內的氣體分配裝置，其中該處理氣體混合物包括至少包含氧物種、及氦或氬氣之氣體；在該腔室內點燃電漿；監視該腔室中的狀態；基於偵測到所監視之狀態到達或越過一閾值，而實行一腔室調節操作，其中該腔室調節操作包含：將一預調節薄膜沉積於該腔室的內表面上，將一碳氧化矽(SiCO)薄膜沉積於該預調節薄膜上，以及將一保護層沉積於該SiCO薄膜上。
以下的敘述包含實施本發明之說明性實施例的系統、方法、技術、指令序列、及計算機程式產品。在以下的敘述中，為了說明之目的，描述了大量的特定細節，以提供對範例實施例的徹底理解。然而，以下對於熟習本技藝者係清楚明白的：可在無該等特定細節之情況下實行本發明標的。
本專利文件之揭示內容之部分可能含有受到版權保護的材料。版權所有者不反對任何人對專利文件或專利揭示內容進行傳真重製，因為其出現於專利及商標局之專利檔案或紀錄中，但除此之外保留所有的版權。以下聲明適用於下文所描述及構成本文件之一部分之圖式中的任何資料：Copyright Lam Research Corporation, 2018, All Rights Reserved。
作為先前技術，晶圓處理腔室(例如Striker Carbide™處理腔室)可允許遠程電漿化學氣相沉積(RPCVD)技術產生高度保形矽碳化物薄膜。有些高度保形矽碳化物薄膜被稱為SPARC™薄膜。在腔室中之晶圓處理循環期間的許多時候，可能需要腔室清潔或調節之操作。當晶圓上缺陷性能偏離規格時可能需要腔室清潔。如上所述，若腔室內的薄膜累積過多，累積的薄膜可能開始剝脫並在受處理之晶圓上沉積粒子。此可能導致由在腔室中處理之晶圓所製成之晶片及裝置中的高程度缺陷。腔室清潔操作可將一些或全部的累積薄膜移除，以使缺陷性能再次回到規格中。
在腔室清潔之後，通常利用原子層沉積(ALD)以將氧化物膜(亦稱為預調節膜)之薄層沉積於處理腔室之一或更多內表面上，然後利用RPCVD以沉積另一碳氧化矽(SiCO)膜薄層。在一些情況下，腔室內的累積薄膜厚度僅由SiCO組成。由於SiCO薄膜易於被氧化，故透過富氧電漿在腔室內之受處理晶圓上所進行的進一步薄膜沉積使得氧化問題加劇。因此，在清潔之後塗佈SiCO薄膜未必解決缺陷性能劣化的問題。換言之，處理腔室之「缺陷性能」(或其防止缺陷在其內之受處理晶圓中發生的能力)可能隨時間而變得越來越差。
在其他習知方法中，在將SPARC™薄膜沉積於晶圓上之前，可執行晶圓預調節操作，以在將SPARC™薄膜塗佈於晶圓時使基板(晶圓)的表面狀態改質。晶圓預調節步驟可包含例如對晶圓表面塗佈起始層並施用其表面處理。但即使在此晶圓預調節操作期間，腔室表面上的薄膜層仍可能受到富氧電漿侵蝕。電漿可能使腔室表面上之預調節薄膜及腔室表面上之其它累積薄膜層的厚度減小。厚度減小(或收縮)可能導致腔室表面(包含例如腔室壁及噴淋頭)上之累積薄膜的「應力」本質上變得更為伸張性，同時預調節薄膜與後續膜層的附著力本身可能因類似原因而受影響。該等收縮及應力效應可能導致晶圓性能之早期劣化、腔室缺陷性能減弱、更多的晶圓上缺陷發生、以及批量大小減小，批量大小減小係因拒斥來自受影響晶圓之缺陷晶片或其他裝置而造成。
在本揭示內容的一些範例中，以上所討論的問題係透過實行週期性腔室調節來解決，其在腔室表面上產生高碳含量且抗氧化的保護層，俾補償薄膜應力並使富氧電漿侵蝕對預調節薄膜的影響減輕。腔室調節的範例觸發情況可包含(但不限於)偵測到缺陷性能位準劣化而接近或到達閾值、或偵測到累積薄膜應力位準接近或到達閾值。在一些範例中，閾值可與腔室內之累積薄膜的厚度相關，累積薄膜的厚度係在0.05至0.5 µm(微米)的範圍內。
在一些範例中，透過化學氣相沉積(CVD)以在腔室表面上形成保護層。沉積反應中所使用的範例化學品包括諸如矽烷或二矽烷的含矽物種、諸如氧或二氧化碳的含氧物種、及諸如氬或氦的稀釋氣體。該反應可發生於在0.1至10 Torr之範圍內的壓力下、及在100°C至600°C之範圍內的溫度下。當達到閾值腔室薄膜累積(例如，在0.05至0.5 µm之範圍內的厚度)時，腔室停止處理另外的晶圓。在一些範例中，處理停止可在偵測到閾值累積厚度時自動發生。在一些範例中，處理腔室係進一步配置以於其後在沒有晶圓支撐於處理腔室內之情況下開始沉積保護層。保護層之厚度可基於晶圓處理的類型而變化。範例厚度可落於50奈米(nm)至1微米(µm)的範圍內。在一些範例中，在處理腔室之表面上沉積初始的保護層之後，處理腔室可繼續處理晶圓直到腔室薄膜累積增加至進一步的閾值厚度(例如厚度加倍)為止。其他的閾值係可能的。當達到或接近進一步的閾值時，可再次將保護層沉積於初始層上，以使腔室的缺陷性能維持於給定的規格內。在一些範例中，保護層之沉積循環持續直到形成複合保護膜為止。在一些範例中，複合保護膜之形成持續直到其外層無法附著於複合膜為止、或直到以下情況為止：外層崩解無法防止先前塗佈於腔室內表面的初始薄膜剝離並以上述方式導致晶圓上缺陷及其他問題。
具有概括標示為400的薄膜成分層之範例保護層之剖面圖係顯示於圖4。此範例中的保護層400A-N係形成於預調節薄膜404上方，預調節薄膜404係形成於腔室壁的表面402之上。所示保護層400A-N在此範例中形成複合保護層，為清楚起見，之後將稱為複合保護膜。複合保護膜及其內之膜層的其他範例係可能的。可例如透過執行以上進一步討論的操作之一或多者而隨時間形成複合保護膜400A-N。複合保護膜400A-N可包含重複或交替的SiCO與保護層對(pairs)，例如連續膜層400A至400N所示。可使成對的SiCO與保護層之生成重複循環，俾使複合保護膜400擴展，直到達到所監視之腔室狀態的閾值為止。範例閾值可為複合保護膜的厚度，例如雙層400N之外表面所示。
在一些範例中，為了改善處理腔室(例如Striker Carbide™腔室)的缺陷性能(亦即，使晶圓缺陷減至最少)，在一或更多腔室表面上生成保護層以使由預調節操作所引起之薄膜損害最小化。一旦基於例如上述閾值之一或多者而偵測到反應腔室中的某些薄膜累積，即在一或更多腔室表面上沉積包含高碳含量SiCO薄膜的保護層。在一些範例中，保護層的固有應力本質上係壓縮性的，因此其可完全或部分地補償由預調節薄膜厚度收縮、或由富氧電漿在先前所塗佈之預調節薄膜中所引起的任何張應力。此等薄膜應力減小或收縮補償可有助於抑制由高張應力所引起的薄膜裂化及剝脫。
在一些範例中，由於保護層中存在過量碳原子，因此保護層可進一步用作犧牲層以防止富氧電漿侵蝕的影響。過量碳原子被富氧電漿犧牲性地消耗。因此，反應腔室內之剩餘的預調節薄膜的碳含量可相似於例如具有公知的優異附著力性質及缺陷性能的SPARC™薄膜。藉由本揭示內容之方法及系統，可顯著地改善並維持處理腔室(例如Striker Carbide™處理腔室)之缺陷性能。此外，如本文所述之經改善之腔室處理可產生比習知範例大250%的批量大小。有些範例有助於在高沉積速率下進行薄膜沉積，例如針對高碳保護層之在50至500埃(A)/min之範圍內的沉積速率。有些範例高碳保護層包含含量在30%至45%重量百分比之間的碳。有些範例保護層具有相對低的所需厚度，因此產生此類保護層對生產產能的影響係最小的。利用本文所述方法所進行的測試顯示：在一些範例中，批量大小可改善250%，同時維持達成該等批量大小之處理腔室的滿意的缺陷性能。
可在其中使用本揭示內容之一些範例操作的範例腔室(以及針對薄膜沉積及控制測試的適當腔室修改)係顯示於附圖的圖1中。電漿蝕刻(或沉積)設備包含一反應器，在其中有一腔室，(複數)反應氣體流過該腔室。在腔室內，將該等氣體電離為電漿，其通常係藉由射頻能量。電漿氣體的高反應性離子能夠與材料(例如被加工成積體電路(IC’s)的半導體晶圓之表面上的聚合物遮罩)進行反應。電漿氣體(例如富氧電漿氣體)可以上述方式與腔室中的其他材料(例如預調節膜或保護膜)進行反應。
在蝕刻之前，將晶圓放置於腔室中並藉由夾頭或固持件而加以固持於適當位置，夾頭或固持件使晶圓之頂表面暴露於電漿氣體。有若干類型的夾頭係在該技術中所公知的。夾頭提供等溫表面並用作晶圓的熱沈。在一類型中，藉由機械夾持的方式將半導體晶圓固持於適當位置。在另一類型的夾頭中，藉由夾頭與晶圓間之電場所產生的靜電力而將半導體晶圓固持於適當位置。本方法適用於以上兩種類型的夾頭。
圖1顯示一範例電容耦合式電漿處理腔室100，其表示通常用以在基板上蝕刻或進行薄膜沉積之類型的例示性電漿處理腔室。夾頭102表示範例工件固持器，可在蝕刻或沉積期間於其上安置基板(例如晶圓104)。可藉由任何合適的夾持技術(例如，靜電、機械、夾固、真空等)以實行夾頭102。在蝕刻期間，夾頭102通常係透過雙頻率源106以在蝕刻期間同時供應雙RF頻率(低頻及高頻)，例如2 MHz及27 MHz。
上電極108係位在晶圓104上方。上電極108為接地的。圖1顯示一蝕刻反應器，其中上電極108之表面大於夾頭102及晶圓104之表面。在蝕刻期間，電漿110係由蝕刻劑來源氣體所形成，蝕刻劑來源氣體係經由氣體管線112而供應，並通過排放管線114而泵出。電絕緣體環109使上電極108與接地的腔室100絕緣。可將侷限環116設置於上電極108與下電極(例如圖1中之夾頭102)之間。一般而言，侷限環116協助將蝕刻電漿110限制於晶圓104上方的區域，俾改善製程控制並確保再現性。
當從雙頻功率源106將RF功率供應至夾頭102時，等電位場線被設置於晶圓104上方。等電位場線為橫跨電漿鞘的電場線，電漿鞘係位於晶圓104與電漿110之間。在電漿處理期間，正離子在等電位場線上加速而撞擊在晶圓104之表面上，從而提供期望的蝕刻效應，例如改善蝕刻方向性。由於上電極108與夾頭102的幾何，場線在整個晶圓表面可能係不均勻的，且可能在晶圓104之邊緣處顯著變化。因此，通常設置聚焦環118以改善在整個晶圓表面的處理均勻性。參照圖1，晶圓104係顯示為設置於聚焦環118之內，聚焦環118可由合適的介電材料(例如陶瓷、石英、塑膠等)所形成。因此，聚焦環118之存在使等電位場線能實質上均勻地設置於晶圓104的整個表面上。
導電屏蔽120實質上包圍聚焦環118。導電屏蔽120係配置為在電漿處理腔室內實質上接地。屏蔽120避免在聚焦環118外部存在不樂見的等電位場線。
現參照附圖之圖2，其顯示範例薄膜應力及厚度收縮結果的表200。此處，在一些範例中，基準薄膜係在沒有腔室預調節步驟之情況下形成於測試晶圓上，以作為對照範例。使用與基準薄膜相同的總沉積時間以在另一測試晶圓上產生第一比較性混合式薄膜，但在此情況下，在產生第一混合式薄膜的過程中，針對每十分之一的薄膜厚度，逐次執行以上進一步描述之類型的習知腔室預調節步驟達總共十次。從圖2的表200中可看出，預調節操作使得薄膜應力從對照基準薄膜的初始值23.9MPa增加將近400%至加壓之第一混合式薄膜之數值99 MPa。此外，薄膜經歷收縮(厚度減小)，由對照基準薄膜的1313.0 (A)至第一混合式薄膜的1152.6 (A)。
繪示於圖3A-3B之圖形中的比較結果係關於第二混合式薄膜。第二混合式薄膜係形成於在腔室中受處理之測試晶圓上，該腔室係藉由使用如本文所例示的保護層而進行調節。採用視圖中包含標示Stn1至Stn4之四個站的象限模組，俾量測存在於各別薄膜內之各種沉積層的粒子大小(缺陷)，該等薄膜係設置以受測試。加壓之第一混合式薄膜(以上在圖2中所測試之類型)的結果係圖示於圖3A中。形成於本揭示內容之經調節(受保護)之腔室中的第二混合式薄膜的結果係圖示於圖3B中。在圖3A-3B之視圖兩者中，在示圖的左側垂直軸上顯示粒子(缺陷)大小，且沿底部水平軸針對四個量測站之各者而顯示薄膜厚度(或累積)。
如圖所示，針對圖3A中所示的加壓之第一混合式薄膜，大於50 nm的粒子大小(亦即，缺陷)在四個站之各者、於大約0.8 µm之薄膜厚度時突增。相反地，圖3B中所示的經調節之第二混合式薄膜結果中發現非常少(若有)的缺陷，即使係在Stn1之大約2 µm(例如1.904 µm)的薄膜厚度深度時。顯示上控限(UCL)(例如，設於三個標準差)、下控限(LCL)、及平均值之各別數值，以及圖3B之經調節第二混合式薄膜的可論證改良。
鑒於上述情形，基於所示範例薄膜結果之可用批量大小(亦即，在腔室清潔之間於晶圓上沉積薄膜的程度)可於0.8 µm時加以建立，因為在更大的薄膜厚度時可看見顯著的缺陷發生。相反地，針對依據本揭示內容之方法而調節的薄膜，可用批量大小可於甚至約2 µm以上的薄膜厚度時加以建立，因為在此範例數值以下看似沒有顯著缺陷出現。
本揭示內容之一些實施例包含方法。參照圖5，用以調節晶圓處理腔室的方法500包含：在操作502，將腔室中的壓力設定至預定的壓力範圍；在操作504，將腔室中的溫度設定至預定的溫度；在操作506，將處理氣體混合物供應至腔室內的氣體分配裝置，其中該處理氣體混合物包括至少包含氧物種、及氦或氬氣之氣體；在操作508，於腔室內點燃電漿；在操作510，監視腔室中的狀態；在操作512，基於偵測到所監視之狀態到達或越過一閾值，而實行腔室調節操作，其中該腔室調節操作包含：在操作514，將預調節薄膜沉積於腔室的內表面上，在操作516，將碳氧化矽(SiCO)薄膜沉積於預調節薄膜上，以及在操作518，將保護層沉積於SiCO薄膜上。
方法500的一些態樣可能包含以下特徵或操作。在一些範例中，所監視之狀態包含腔室缺陷性能。在一些範例中，所監視之狀態包含薄膜應力值。在一些範例中，所監視之狀態包含腔室之內表面上的薄膜累積厚度。在一些範例中，薄膜累積厚度係在0.05至0.5 µm(微米)的範圍內。
在一些範例中，透過化學氣相沉積(CVD)而形成保護層。CVD反應中所使用的化學品可包括含矽物種，例如矽烷或二矽烷。
在一些範例中，保護層沉積期間之腔室預定壓力範圍係在0.1至10 Torr的範圍內。在一些範例中，保護層沉積期間之腔室預定溫度範圍係在100°C至600°C的範圍內。在一些範例中，保護層的厚度係在50奈米(nm)至1微米(µm)的範圍內。
在一些範例中，將碳氧化矽(SiCO)薄膜沉積於預調節薄膜上、及將保護層沉積於SiCO薄膜上之操作係相繼地重複執行，俾在複合保護膜內形成SiCO薄膜與保護層之成對層。
在一些範例中，保護層為高碳、抗氧化的保護層，其包含30%至45%之重量百分比的碳。
在一些範例中，方法500更包含在50至500埃(A)/min之範圍內的沉積速率下沉積保護層。
在一些範例中，點燃電漿之步驟包含將500至6000W之範圍內的HF功率供應至上電極與下電極之其中一者、以及將500至6000W之範圍內的LF功率供應至上電極與下電極之該其中一者。在一些範例中，點燃電漿之步驟包含將2000至4000W之範圍內的HF功率供應至上電極與下電極之其中一者、以及將1000至4000W之範圍內的LF功率供應至上電極與下電極之該其中一者。
雖然已參照特定的範例實施例而描述實施例，但顯然地，可在不偏離本發明標的之更廣泛精神及範疇之情況下對該等實施例進行各種修改及改變。因此，說明書及圖式係視為說明性的而非限制性。構成本文中之一部分的附圖係以說明(而非限制)的方式顯示特定實施例，可在該等特定實施例中實行標的。所示實施例係以足夠細節描述，俾使熟習本技藝者能夠實行本文所揭示之教示。可利用其他實施例及從中衍生其他實施例，使得可在不偏離本揭示內容之範疇的情況下進行結構與邏輯的替換及變化。因此此實施方式說明並非視為限制性的，且各種實施例之範疇僅由隨附之申請專利範圍、以及此等申請專利範圍所賦予之等效物的全部範圍所界定。
本發明標的之此等實施例在此可個別及/或共同地由用語「發明」所提及，其僅係為了方便，而非意圖將本申請案之範疇自願性地限制於任何單一的發明或發明概念(若事實上揭露多於一個發明或發明概念)。因此，雖然本文顯示並描述特定實施例，但應理解，為實現相同目的而計算的任何配置可替代所示特定實施例。本揭示內容係意圖涵蓋各種實施例之任何及所有的調整或變化。在閱讀以上說明後，上述實施例之組合、及本文未具體描述的其他實施例對於熟習本技藝者係清楚明白的。
100‧‧‧腔室
102‧‧‧夾頭
104‧‧‧晶圓
106‧‧‧雙頻功率源
108‧‧‧上電極
109‧‧‧電絕緣體環
110‧‧‧電漿
112‧‧‧氣體管線
114‧‧‧排放管線
116‧‧‧侷限環
118‧‧‧聚焦環
120‧‧‧導電屏蔽
200‧‧‧圖表
400A-N‧‧‧複合保護膜
402‧‧‧腔室壁表面
404‧‧‧預調節薄膜
500‧‧‧方法
502‧‧‧操作
504‧‧‧操作
506‧‧‧操作
508‧‧‧操作
510‧‧‧操作
512‧‧‧操作
514‧‧‧操作
516‧‧‧操作
518‧‧‧操作
在附圖之圖式中藉由範例而非限制的方式描述一些實施例：
圖1為晶圓處理腔室之示意圖，可在該晶圓處理腔室內使用本揭示內容的一些範例方法。
依據一些範例實施例，圖2顯示薄膜收縮及應力之結果的圖表。
依據一些範例實施例，圖3A-3B顯示所量測之缺陷性能的比較圖。
依據一範例實施例，圖4為複合保護層的剖面圖。
依據一範例實施例，圖5為繪示一方法中之操作的流程圖。

Claims (16)

  1. 一種用以調節晶圓處理腔室的方法，該方法包含： 將腔室中的壓力設定至預定壓力範圍內； 將該腔室中的溫度設定至預定溫度範圍內； 將一處理氣體混合物供應至該腔室內的氣體分配裝置，其中該處理氣體混合物包括至少包含氧物種、及氦或氬氣之氣體； 在該腔室內點燃電漿； 監視該腔室中的狀態； 基於偵測到所監視之狀態到達或越過一閾值，而實行一腔室調節操作，其中該腔室調節操作包含： 將一預調節薄膜沉積於該腔室的內表面上， 將一碳氧化矽(SiCO)薄膜沉積於該預調節薄膜上，以及 將一保護層沉積於該SiCO薄膜上。
  2. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中所監視之狀態包含腔室缺陷性能。
  3. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中所監視之狀態包含薄膜應力值。
  4. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中所監視之狀態包含該腔室之內表面上的薄膜累積之厚度。
  5. 如申請專利範圍第4項之用以調節晶圓處理腔室的方法，其中該薄膜累積之厚度係在0.05至0.5 µm(微米)的範圍內。
  6. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中透過化學氣相沉積(CVD)而形成該保護層。
  7. 如申請專利範圍第6項之用以調節晶圓處理腔室的方法，其中CVD反應中所使用的化學品包括含矽物種。
  8. 如申請專利範圍第7項之用以調節晶圓處理腔室的方法，其中該含矽物種包含矽烷或二矽烷。
  9. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中在沉積該保護層期間之該腔室的該預定壓力範圍係在0.1至10 Torr的範圍內。
  10. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中在沉積該保護層期間之該腔室的該預定溫度範圍係在100°C至600°C的範圍內。
  11. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中該保護層的厚度係在50奈米(nm)至1微米(µm)的範圍內。
  12. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中，將該碳氧化矽(SiCO)薄膜沉積於該預調節薄膜上、及將該保護層沉積於該SiCO薄膜上之該等操作係相繼地重複執行，俾在一複合保護膜內形成SiCO薄膜與保護層之成對層。
  13. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中該保護層為高碳抗氧化保護層，其包含30%至45%之重量百分比的碳。
  14. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，更包含在50至500埃(A)/min之範圍內的沉積速率下沉積該保護層。
  15. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中點燃該電漿之步驟包含將500至6000W之範圍內的HF功率供應至上電極與下電極之其中一者、以及將500至6000W之範圍內的LF功率供應至該上電極與該下電極之該其中一者。
  16. 如申請專利範圍第1項之用以調節晶圓處理腔室的方法，其中點燃該電漿之步驟包含將2000至4000W之範圍內的HF功率供應至上電極與下電極之其中一者、以及將1000至4000W之範圍內的LF功率供應至該上電極與該下電極之該其中一者。
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