TW201709275A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW201709275A
TW201709275A TW105112740A TW105112740A TW201709275A TW 201709275 A TW201709275 A TW 201709275A TW 105112740 A TW105112740 A TW 105112740A TW 105112740 A TW105112740 A TW 105112740A TW 201709275 A TW201709275 A TW 201709275A
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Taiwan
Prior art keywords
exposure
photoresist layer
semiconductor device
semiconductor substrate
film
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TW105112740A
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English (en)
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TWI699821B (zh
Inventor
萩原琢也
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瑞薩電子股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/004—Photosensitive materials
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    • G03F7/094—Multilayer resist systems, e.g. planarising layers
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    • G—PHYSICS
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    • G—PHYSICS
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
    • G—PHYSICS
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
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Abstract

一種半導體裝置之製造方法，提高半導體裝置的可靠度。該半導體裝置之製造方法，於圓形的半導體基板上形成被加工膜，於被加工膜上形成表面具有撥水性的光阻層。其次，於圓形的半導體基板之外周區域，選擇性地施行第1周邊曝光，降低半導體基板之外周區域中的光阻層之撥水性後，對光阻層實施液浸曝光。接著，於圓形的半導體基板之外周區域，在施行第2周邊曝光後，將施行過第1周邊曝光、液浸曝光及第2周邊曝光的光阻層顯影處理，使用經顯影處理的光阻層，實施被加工膜之蝕刻。

Description

半導體裝置之製造方法
本發明係關於一種半導體裝置之製造方法，特別是關於應用在使用液浸曝光的半導體裝置之製造方法的有效技術。
液浸曝光，係在透鏡與半導體晶圓之間的微小間隙，利用水的表面張力形成水膜(彎液面，Meniscus)，藉而使透鏡與被照射面(半導體晶圓)之間高折射率化的曝光方式，相較於一般的乾式曝光可增大有效的透鏡數值孔徑(Numerical Aperture，NA)。藉由增大透鏡數值孔徑，而可解析更微細的圖案，因而使液浸曝光的產業實用性進步。
於日本特開2006-108564號公報(專利文獻1)記載一種技術，藉由將矽基板暴露於活性氧氣體環境並對光阻膜照射真空紫外線，而於光阻膜的表層形成氧化層，使光阻膜的表層親水性化。
於日本特開2008-235542號公報(專利文獻2)記載一種技術，於液浸微影中，可在曝光晶圓外周部附近時仍防止液體往晶圓外側流出並進行曝光處理。具體而言，在晶圓之外周端面及端面周邊部設置撥液劑層。
於日本特開2009-117873號公報(專利文獻3)記載一種技術，在浸液曝光前供給預濕液預先將基板濡濕，對預先被濡濕的基板與投影系統之間供給浸液。
於日本特表2006-528835號公報(專利文獻4)記載一種技術，其係關於具備浸漬液體內之氣泡出現的防止及氣泡的去除機構之浸漬裝置。
於日本特開2009-88552號公報(專利文獻5)記載一種技術，其係關於減少對於浸漬微影之成像品質的浸漬液中之氣泡的影響之微影裝置。 [習知技術文獻] [專利文獻]
[專利文獻1]日本特開2006-108564號公報 [專利文獻2]日本特開2008-235542號公報 [專利文獻3]日本特開2009-117873號公報 [專利文獻4]日本特表2006-528835號公報 [專利文獻5]日本特開2009-88552號公報
[本發明所欲解決的問題] 依本案發明人之研究，則可了解下述內容。
液浸曝光中，雖為了縮短一片半導體晶圓之處理時間而使用具有高撥水性的頂部無塗覆光阻(top coat-less resist)，但發明人發現由於此一高撥水性，在半導體晶圓的周邊部中，發生圖案不良，而使形成在半導體晶圓之半導體裝置的可靠度降低。在使用液浸曝光的半導體裝置之製造方法中，追求提高半導體裝置的可靠度之技術。
其他問題與新特徵，應可自本說明書之記述內容及附圖明瞭。 [解決問題之技術手段]
依一實施形態，則於圓形的半導體基板上形成被加工膜，於被加工膜上形成表面具有撥水性的光阻層。其次，於圓形的半導體基板之外周區域，選擇性地施行第1周邊曝光，降低半導體基板之外周區域中的光阻層之撥水性後，對光阻層實施液浸曝光。接著，於圓形的半導體基板之外周區域，在施行第2周邊曝光後，將施行過第1周邊曝光、液浸曝光及第2周邊曝光的光阻層顯影處理，使用經顯影處理的光阻層，實施被加工膜之蝕刻。 [本發明之效果]
依一實施形態，則可提高半導體裝置的可靠度。
以下實施形態中，雖為了方便在必要時分割為複數個部分或實施形態予以說明，但除了特別指出的情況以外，其等並非彼此全無關聯，具有一方為另一方之部分或全部的變形例、詳細說明、補充說明等關係。此外，以下實施形態中，在提及要素的數目等(包括個數、數值、量、範圍等)之情況，除了特別指出之情況及原理上明顯限定為特定數目之情況等以外，並未限定於該特定數目，可為特定數目以上亦可為以下。進一步，以下實施形態中，該構成要素(亦包含要素步驟等)，除了特別指出之情況及原理上明顯被視為必須之情況等以外，自然可說是並非為必要。同樣地，以下實施形態中，提及構成要素等之形狀、位置關係等時，除了特別指出之情況及原理上明顯被視為並非如此之情況等以外，包含實質上與該形狀等近似或類似者等。此一條件，對於上述數值及範圍亦相同。
以下，依據附圖詳細地說明本發明之實施形態。另，在用於說明實施形態的全部附圖中，對具有同一功能的構件給予同一符號，並省略其重複的說明。此外，以下實施形態，除了特別必要時以外，原則上不重複同一或同樣部分的說明。
此外，實施形態所使用之附圖中，亦有即便為剖面圖仍為了容易觀看附圖而將影線省略之情況。此外，亦有即便為俯視圖仍為了容易觀看附圖而附加影線之情況。
首先，從本案發明人研究出本發明之歷程開始說明。
圖1為，液浸曝光的說明圖。
於液浸曝光，使用例如如圖1所示之構造的裝置。在圖1之液浸曝光裝置中，於透鏡(投影透鏡)LS的上方，配置光源LTS、光罩(倍縮光罩)MK1，於透鏡LS的下方配置半導體晶圓SW，此半導體晶圓SW配置(真空吸附)而保持在晶圓台ST上。而後，使純水自噴嘴NZ之流入口NZa進入，自吸入口NZb排出，以使純水充滿透鏡LS與半導體晶圓SW的被照射面(被曝光面)之間。藉由此純水，在透鏡LS與半導體晶圓SW的被照射面之間的微小間隙形成彎液面(水膜)。此一彎液面，作為浸液MS而作用，但為了形成此彎液面，必須使半導體晶圓SW的被照射面成為撥水性。於半導體晶圓SW的被照射面，將微細加工用之光阻層(光阻膜、光阻層、感光性光阻層)PR形成為單層光阻膜或多層光阻膜。半導體晶圓SW，具有半導體基板SUB與光阻層PR。光源LTS，例如，係ArF準分子雷射，其波長為193nm。光罩MK1，係用於在光阻層PR印附期望的圖案之遮罩，以玻璃或石英等形成。
從光源LTS發出的光線，通過光罩MK1、透鏡LS、浸液MS到達半導體晶圓SW，而將與光罩MK1所具有之圖案幾近相同之縮小投影圖案，印附於光阻層PR。
液浸曝光(液浸微影)中，實施掃描曝光：對於透鏡LS，掃描半導體晶圓SW而於半導體晶圓SW(換而言之，光阻層PR)照射曝光光線(ArF準分子雷射光)之。此時，為了能夠以高速且流暢的方式移動水滴不殘留的浸液，而必須使光阻層PR成為高撥水性。若光阻層PR之撥水性低，則在掃描半導體晶圓SW時，有發生浸液MS(浸漬水)之水滴殘留的疑慮。由於水滴殘留，在殘留的水滴乾燥時，從半導體晶圓SW奪取氣化熱，使半導體晶圓SW收縮，因而成為光罩MK1與半導體晶圓SW的重合偏移的原因。
作為具有高撥水性的光阻層PR，使用頂部無塗覆光阻。頂部無塗覆光阻，在光阻液中作為疏水劑而微量混入表面自由能低的高分子(含氟聚合物)，於形成塗布膜時利用疏水劑之表面偏析效果使疏水劑僅集中在表面，藉而以1次塗布處理實現高撥水性。
然而，依本案發明人之研究，則發現具有以下問題。
圖2為，說明液浸曝光中氣泡包含在其中的附圖。
於液浸曝光裝置，在半導體晶圓SW周圍，以包圍半導體晶圓SW之全周的方式配置晶圓台引導件WSG。晶圓台引導件WSG，具有與形成有光阻層PR的半導體晶圓SW之主面幾近相同的高度，於半導體晶圓SW與晶圓台引導件WSG間，存在數mm程度的間隙(gap)GP。此外，掃描半導體晶圓SW時，晶圓台引導件WSG，成為與晶圓台ST一體動作的機構。
晶圓台引導件WSG，係為了防止浸液MS從半導體晶圓SW之表面上溢洩而設置，於晶圓台引導件WSG之表面，為了保有撥水性，例如塗布氟系樹脂等。形成在半導體晶圓SW之表面的光阻層PR、及晶圓台引導件WSG，具有高撥水性，因而即便浸液MS橫跨半導體晶圓SW之表面、間隙GP及晶圓台引導件WSG上的情況，浸液MS仍不溢洩至間隙GP。換而言之，則為了將浸液MS保持在半導體晶圓SW之表面上，而必須使光阻層PR呈撥水性。
然而，依本案發明人之研究，則得知為了液浸曝光的高速處理，在將具有高撥水性之頂部無塗覆光阻作為光阻層PR使用的情況，有故障發生之情形。如圖2所示，在半導體晶圓SW，從浸液MS橫跨半導體晶圓SW之表面、間隙GP及晶圓台引導件WSG上的狀態起，相對於透鏡LS，往半導體晶圓SW之外側方向移動的情況，由於存在於間隙GP的空氣被包含在浸液MS內，而在浸液MS內產生氣泡VD。氣泡VD，產生在半導體晶圓SW之主面的外周部，為數mm程度之大小，氣泡VD產生的部分，圖案未解析，而發生圖案不良。亦即，發明人發現由於氣泡VD，造成曝光光線之光程混亂所產生的失焦，因而發生圖案不良。此外，得知光阻層PR之撥水性越高，則越容易發生氣泡VD。
如此地，得知在藉由使用頂部無塗覆光阻的液浸曝光製造半導體裝置之情況，有半導體裝置的可靠度降低、製造產量降低等問題。以下實施形態中，施行克服此等問題之工夫，其特徵係在液浸曝光前，於半導體晶圓之周邊區域中，控制光阻膜的撥水性。
(實施形態) 本實施形態之半導體裝置，具有複數個MISFET(Meta Insulator Semiconduc tor Field Effect Transistor，金氧半場效電晶體)。半導體裝置，形成在矩形的晶片區域，於半導體晶圓，行列狀地配置複數個晶片區域。複數個半導體裝置，形成在一片半導體晶圓上。
圖3為，顯示半導體裝置的處理流程之一部分的步驟流程圖，圖4~圖14為，顯示半導體裝置之製造步驟的要部剖面圖。圖15為，顯示曝光區域之半導體晶圓的俯視圖。
首先，如圖4所示，例如，準備由矽形成的半導體基板SUB(圖3的步驟S1)。半導體基板SUB，係平面形狀為圓形(略圓形)的半導體晶圓SW。圖4中，顯示半導體晶圓SW之周邊部PC與中央部CP的一部分。周邊部PC，至少包含後述之第1周邊曝光區域WEE1及第2周邊曝光區域WEE2。中央部CP，係指較周邊部PC更接近半導體晶圓SW之中央部(內側部)。此外，半導體晶圓SW之外周部的截面形狀，雖簡化而以方形表示，但實際上，如圖2所示，主面側及背面側的角部在厚度方向倒角。
其次，於半導體基板SUB上，例如，隔著由氧化矽膜形成的絕緣膜1，形成被加工膜(被加工層)2(圖3的步驟S2)。被加工膜2，例如，由氮化矽膜形成。接著，於被加工膜2上形成反射防止膜。於反射防止膜，使用：使用無機膜的BARL (Bottom Antireflective Layer，底部抗反射層)、或使用有機膜的BARC(Bottom Antireflective Coating，底部抗反射塗布)。在BARC的形成中，施行塗布與熱硬化。在使用入射角大的光線使光線成像之情況，亦使用三層光阻製程：其係使用下層3與中間層4兩個層作為反射防止膜。三層光阻製程，在加工的面，使中間層4作為用於將下層3加工的遮罩作用，使下層3作為用於將被加工膜2加工的遮罩作用。以下，顯示將三層光阻製程使用在反射防止膜的例子。下層3，例如係藉由以下方式形成：使用藥液HM8005(JSR製)，將此藥液藉由旋轉塗布法以200 nm之膜厚塗布後，藉由熱處理使聚合物交聯。
接著，在下層3上形成中間層(中間層膜)4，其主要成分包含碳(C)及矽(Si)。中間層4，使用SHB-A759(信越化學製)作為基底的材料(基底樹脂)。藉由旋轉塗布法塗布為80nm之膜厚，其後，藉由180℃、90秒的熱處理使基底聚合物交聯，以形成中間層4。
而後，旋轉塗布頂部無塗覆光阻而形成光阻層(感光性光阻層、頂部無塗覆光阻層、光阻膜)PR(圖3的步驟S3)。在塗布後施行熱硬化。光阻層PR，使用化學增幅型之正型光阻。光阻層PR，作為基底聚合物，使用鍵結了「感應酸而脫離之2-甲基金剛烷基」的甲基丙烯酸酯樹脂(添加量：相對於全質量為7.0質量%)； 作為PAG，使用全氟丁磺酸三苯基鋶(添加量：相對於基底聚合物的質量為5.0質量%)。作為淬滅劑，使用三乙醇胺(添加量：相對於基底聚合物的質量為5.0質量%)，作為撥水添加劑，使用不溶於鹼性顯影液的氟化合物(添加量：相對於基底聚合物的質量為4.0質量%)。於作為溶媒使用的PGMEA(醋酸丙二醇甲醚酯)溶解此等材料(上述基底聚合物、PAG、淬滅劑、撥水添加劑)而製作出的材料。光阻層PR，係藉由旋轉塗布法塗布100nm之膜厚後，藉由100℃、60秒的熱處理而形成。添加於光阻層PR的撥水添加劑在旋轉塗布時表面偏析，此一結果，光阻層PR之後退角(Receding Contact Angle)展現為75.0°的高撥水性。
接著，如圖5所示，在接近半導體晶圓SW之外周WF的區域(外周區域)中，為了降低光阻層PR之撥水性而實施第1周邊曝光(圖3的步驟S4)。第1周邊曝光，如圖5及圖15所示，使用光罩MK2，對自半導體晶圓SW之外周WF起具有約第1寬度(例如，1mm)的區域，選擇性地照射曝光光線。曝光光所照射的區域，係第1周邊曝光區域WEE1。如圖15所示，第1周邊曝光區域WEE1，係外周WF與第1周邊曝光區域內周W1之間的區域。第1周邊曝光，為了縮短處理時間及減少處理成本，宜使用較液浸曝光更為長波長之DUV(Deep Ultraviolet，深紫外)光所進行的乾式曝光。
在第1周邊曝光，藉由對光阻層PR，將波長200nm的水銀氙燈之曝光光線，例如，照射曝光量100mJ/cm2 ，而從化學增幅型之正型光阻中的光酸產生劑產生酸，所產生的酸一部分與光阻之基底樹脂進行去保護反應，於基底樹脂出現極性基。此一結果，第1周邊曝光區域WEE1的光阻層PR之表面的後退角降低為72.0°。亦即，藉由第1周邊曝光，使第1周邊曝光區域WEE1的光阻層PR之撥水性降低。
接著，如圖6及圖15所示地實施液浸曝光(圖3的步驟S5)。對於形成在半導體晶圓SW之主面的光阻層PR，如同使用圖1及圖2所說明地實施液浸曝光。液浸曝光，係將形成在光罩(倍縮光罩)MK1的圖案，藉由縮小投影曝光，而在光阻層PR上成像，其使波長193nm之曝光光線的曝光量為20mJ/cm2 。液浸曝光，係藉由對於透鏡LS使半導體晶圓SW掃描，而於半導體晶圓SW之主面依序形成晶片區域CH的掃描曝光。晶片區域CH，於半導體晶圓SW之主面上，縱向及橫向地配置為行列狀，在半導體晶圓SW之外周WF，亦涵蓋全周而形成晶片區域CH。亦即，半導體晶圓SW之外周WF，位於行列狀地配置的晶片區域CH(換而言之，液浸曝光區域IL)之內側。如此地，由於在半導體晶圓SW之外周WF實施液浸曝光，而發生前述之氣泡VD的問題。另，在半導體晶圓SW之外周WF亦形成晶片區域CH，係因藉由半導體晶圓SW之位於中央部CP的晶片區域CH與位於周邊部PC的晶片區域CH，使曝光或蝕刻等加工環境一致，以提高加工精度、產量之故。此外，亦係為了增加半導體晶圓SW上之晶片區域CH的數目。
另，圖6中，顯示液浸曝光之曝光光線，僅照射半導體晶圓SW之中央部CP的一部分之例子。
接著，如圖7所示，在半導體晶圓SW之外周部中，實施第2周邊曝光(圖3的步驟S6)。第2周邊曝光，如圖7及圖15所示，使用光罩MK3，在自半導體晶圓SW之外周WF起具有第2寬度(例如，1.5mm之寬度)的區域，選擇性地照射曝光光線。曝光光線所照射的區域，係第2周邊曝光區域WEE2。如圖15所示，第2周邊曝光區域WEE2，係外周WF與第2周邊曝光區域內周W2之間的區域。第2周邊曝光，為了縮短處理時間及減少處理成本，宜使用較液浸曝光更為長波長之DUV光所進行的乾式曝光。
第2周邊曝光，係為了將半導體晶圓SW之接近外周WF的部分之光阻層PR，以後述之顯影步驟去除而實施。半導體晶圓SW之接近外周WF的部分之光阻層PR的膜厚，相較於中央部CP容易變動。此係由於半導體晶圓SW之周圍在厚度方向倒角，或藉由旋轉塗布將光阻層PR塗布等原因。而此一膜厚變動，引起半導體晶圓SW之接近外周WF的部分之被加工膜2的圖案不良。第2周邊曝光，係為了將發生光阻層PR之膜厚變動的區域之光阻層PR去除而實施。
第2周邊曝光區域內周W2，其重要為較第1周邊曝光區域內周W1位於更接近半導體晶圓SW之主面的內側(中心側)。亦即，藉由使第2周邊曝光區域內周W2，與第1周邊曝光區域內周W1分離，而可防止(減少)第1周邊曝光的曝光光線之，對於形成在第2周邊曝光區域內周W2之內側(中心側)的晶片區域CH之影響。亦可使第2周邊曝光區域內周W2，自外周WF起為2mm。第2周邊曝中，對光阻層PR，將水銀氙燈之曝光光線，例如，照射曝光量60mJ/cm2 。
接著，對光阻層PR，例如，以100℃、60秒的條件實施曝光後熱處理(PEB：Post Exposure Bake)。前述之藉由第1周邊曝光、液浸曝光及第2周邊曝光，而照射曝光光線(紫外線)的區域，從光阻層PR所包含的酸產生劑產生酸。進一步，藉由施行曝光後熱處理，照射區域之光阻層PR中，去保護反應進行。亦即，在照射區域產生的酸，與基材樹脂之酸解離性的鹼溶解抑制基作用而使其分解，將光阻層PR改變為可溶解在鹼性顯影液的分子構造。
接著，如圖8所示，對半導體晶圓SW實施顯影處理(圖3的步驟S7)。作為顯影液，使用鹼性的氫氧化四甲基銨液(下稱TMAH(Tetra Methyl Ammonium Hydroxide)液)等，實施顯影處理30秒。藉由顯影處理，使曝光光線所照射的照射區域之光阻層PR溶解，完成光阻圖案PRa，從係光阻層PR之溶解部分的開口，露出中間層4。將在液浸曝光中ArF準分子雷射曝光光線所照射的區域及第2周邊曝光區域WEE2的光阻層PR去除。
檢查顯影處理結束之光阻圖案PRa後，發現相較於實施第1周邊曝光之前，圖案不良減少。亦即，藉由在液浸曝光前，對半導體晶圓SW之光阻層PR施行第1周邊曝光，而可減少第1周邊曝光區域WEE1的光阻層PR之撥水性，在液浸曝光時，可防止氣泡被包含進來，可防止光阻圖案PRa的圖案不良。
接著，如圖9所示，實施中間層4及下層3的蝕刻(圖3的步驟S8)。將光阻圖案PRa作為遮罩，藉由CHF3 、CF4 、O2 之混合氣體將中間層4乾蝕刻加工，將光阻圖案PRa的圖案轉印至中間層4。進一步，將光阻圖案PRa與中間層4所產生的圖案作為遮罩，藉由O2 、N2 、HBr之混合氣體將下層3乾蝕刻加工，而完成轉印有光阻圖案PRa的圖案之下層圖案3a。在蝕刻下層3時，光阻圖案PRa及中間層4被去除而消失。
接著，如圖10所示，將下層圖案3a作為遮罩，蝕刻被加工膜2並形成溝GV(圖3的步驟S9)。此處，藉由Cl、HBr、SF6 、O2 之混合氣體，依序乾蝕刻係被加工膜2的氮化矽膜、絕緣膜1、半導體基板(矽基板)SUB。光阻層PR之光阻圖案PRa轉印至被加工膜2，將被加工膜2作為遮罩而於半導體基板SUB形成溝GV，因而在對應於光阻圖案PRa之開口的位置形成溝GV。
接著，如圖11所示，在半導體基板SUB上，例如，將由氧化矽膜形成的元件分離絕緣膜5，藉由CVD(Chemical Vapor Deposition，化學氣相沉積)法沉積，以元件分離絕緣膜5填入溝GV。
接著，如圖12所示，藉由對元件分離絕緣膜5施行CMP(Chemical Mechanical Polishing，化學機械研磨)處理，而僅在溝GV內選擇性地留下元件分離絕緣膜5，形成元件分離區域STI(圖3的步驟S10)。
接著，如圖13所示，將被加工膜2及絕緣膜1去除後，在半導體基板SUB之主面，形成閘極絕緣膜GI及閘極電極GE。
形成元件分離區域STI後，若將被加工膜2及絕緣膜1去除，則半導體基板SUB之主面，產生在俯視時被元件分離區域STI包圍的活性區域。接著，於半導體基板SUB之主面上，形成成為閘極絕緣膜GI的絕緣膜、及形成閘極電極GE的導體膜。而後，藉由將導體膜及絕緣膜蝕刻加工，而形成閘極電極GE與閘極絕緣膜GI。將此導體膜作為前述之被加工膜，實施從圖3的步驟S3至步驟S9而可形成閘極電極GE。閘極絕緣膜GI，可由氧化矽膜或氮氧化矽膜等形成。此外，閘極電極GE，可由多晶矽膜或金屬膜等形成。
此外，亦可將導體膜與半導體基板SUB加以對應。此一情況，在半導體基板SUB形成溝GV之蝕刻步驟，對應於形成閘極電極GE的導體層之蝕刻步驟。
接著，如圖14所示，依序形成低濃度半導體區域NM、側壁絕緣膜SP及高濃度半導體區域NH。首先，於閘極電極GE之兩端的半導體基板SUB之表面形成低濃度半導體區域NM。低濃度半導體區域NM，例如，係n型半導體區域，將磷(P)或砷(As)等雜質對閘極電極GE以自對準方式離子注入而形成。
接著，沉積絕緣膜以使其覆蓋閘極電極GE的頂面及側面，對此絕緣膜施行非等向性乾蝕刻，藉而可於閘極電極GE之側壁上，選擇性地形成側壁絕緣膜SP。側壁絕緣膜SP，可為氧化矽膜、氮化矽膜、或氧化矽膜與氮化矽膜的疊層構造。
接著，於閘極電極GE之兩端的半導體基板SUB之表面形成高濃度半導體區域NH。高濃度半導體區域NH，例如，係n型半導體區域，將磷(P)或砷(As)等雜質對閘極電極GE及側壁絕緣膜SP以自對準方式離子注入而形成。
以閘極電極GE、閘極絕緣膜GI、低濃度半導體區域NM、及高濃度半導體區域NH，構成MISFET。以低濃度半導體區域NM與高濃度半導體區域NH，形成MISFET的源極、汲極。
依本實施形態，則對於使用在液浸曝光的光阻層PR，在液浸曝光之前，施行第1周邊曝光，減少位於半導體晶圓SW之周邊的第1周邊曝光區域WEE1中之光阻層PR的撥水性，藉而在液浸曝光中，可防止氣泡VD被包含進來，可防止光阻圖案PRa的圖案不良。
此外，可防止轉印有光阻圖案PRa的圖案之係被加工膜2的氮化矽膜及元件分離區域STI之圖案不良，可提供可靠度高的半導體裝置。此外，可改善半導體裝置之製造產量。
氣泡VD之被包含進來明顯時，將第1周邊曝光的曝光量增大。藉此，第1周邊曝光區域WEE1的親水化更為進展，可抑制氣泡VD被包含進來。因加入第1周邊曝光而在間隙GP發生漏洩之情況，將第1周邊曝光的曝光量減小。藉此，可改善加入第1周邊曝光所造成之光阻表面過度親水化。藉由使第1周邊曝光與第2周邊曝光為不同步驟，而可如同上述地簡單改變第1周邊曝光的曝光量，可防止液浸曝光時之氣泡VD被包含進來。
藉由使第2周邊曝光區域WEE2的寬度，較第1周邊曝光區域WEE1的寬度更大，即便將對第1周邊曝光區域WEE1照射的曝光光線，改變為第1周邊曝光的曝光量，對於形成在第2周邊曝光區域WEE2之內側(第2周邊曝光區域內周W2之內側(中心側))的晶片區域CH，仍未造成不良影響。因此，亦可充分地增大第1周邊曝光中之曝光量，可充分地降低光阻層PR之撥水性。
藉由使第1周邊曝光之曝光光線的波長，較液浸曝光中之曝光光線的波長更長，例如，在第1周邊曝光，可使用利用DUV光的曝光裝置，可縮短第1周邊曝光的處理時間，可減少製造成本。關於第2周邊曝光，亦可使用利用DUV光的曝光裝置，故可獲得同樣的效果。
此外，可防止應用同樣的製法之閘極電極GE的圖案不良。
＜變形例1＞ 變形例1，係在緊接著圖3的步驟S4之第1周邊曝光後，藉由純水將半導體晶圓SW(光阻層PR)之表面水洗處理。
緊接著第1周邊曝光後，第1周邊曝光區域WEE1之光阻層PR，一部分進行構成光阻層PR之基底樹脂的去保護反應，出現極性基。極性基，與水的親和性高，因而若對光阻層PR之表面供給水，則極性基，在光阻層PR之表面方向定向變化，故光阻層PR的親和性提高。
此變形例，在無法藉由第1周邊曝光將光阻層PR之撥水性充分降低的情況等特別有效。
＜變形例2＞ 變形例2，係在緊接著圖3的步驟S4之第1周邊曝光後，對半導體晶圓SW進行熱處理。使熱處理條件，為70℃、10秒程度，宜使其較曝光後熱處理更為低溫、短時間。
藉由在緊接第1周邊曝光後追加熱處理，而可使第1周邊曝光區域WEE1中之光阻層PR的去保護反應而進一步進行，使撥水性大幅降低。與變形例1之情況同樣地，在無法藉由第1周邊曝光將光阻層PR之撥水性充分降低的情況等特別有效。
＜變形例3＞ 變形例3，係在圖3之處理流程中，於液浸曝光之前實施第2周邊曝光。第1周邊曝光與第2周邊曝光的順序，若為液浸曝光之前，何者為先皆可，但重要的是實施第1周邊曝光與第2周邊曝光雙方。曝光條件，與上述實施形態相同，第1周邊曝光與第2周邊曝光，曝光區域與曝光條件各自相異。亦即，重要的是使第2周邊曝光區域WEE2的寬度，較用於控制撥水性之第1周邊曝光區域WEE1的寬度更寬。藉由維持此一關係，第1周邊曝光中的曝光光線，對於形成在第2周邊曝光區域WEE2之內側(第2周邊曝光區域內周W2之內側(中心側))的晶片區域CH，未造成不良影響。例如，在第2周邊曝光中，若將曝光光線的曝光量增大，則可省略第1周邊曝光，但因對於圖15的第2周邊曝光區域內周W2之內側的晶片區域造成影響，故宜併用第1周邊曝光與第2周邊曝光。
變形例3之情況，由於可將第1周邊曝光與第2周邊曝光，在單一的曝光裝置單元中實施，故可縮短曝光步驟的處理時間。上述實施形態之情況，第1周邊曝光、液浸曝光及第2周邊曝光，一般分別在不同的曝光裝置單元處理。變形例3中，可將第1周邊曝光與第2周邊曝光以單一的曝光裝置單元處理，故可縮短單元間之移動等的時間，可增加處理量。
如同以上，製造本實施形態之半導體裝置。
以上，雖將本案發明人所提出之發明依據其實施形態具體地說明，但本發明並未限定於該實施形態，自然亦可在不脫離其要旨的範圍進行各種變更可能。
例如，雖以在被加工膜2上，隔著下層3及中間層4形成光阻層PR的例子說明，但亦可省略中間層4或下層3，或省略此兩者。
1‧‧‧絕緣膜
2‧‧‧被加工膜
3‧‧‧下層
3a‧‧‧下層圖案
4‧‧‧中間層
5‧‧‧元件分離絕緣膜
CH‧‧‧晶片區域
CP‧‧‧中央部
GE‧‧‧閘極電極
GI‧‧‧閘極絕緣膜
GP‧‧‧間隙
GV‧‧‧溝
IL‧‧‧液浸曝光區域
LS‧‧‧透鏡
LTS‧‧‧光源
MK1、MK2、MK3‧‧‧光罩
MS‧‧‧浸液
NM‧‧‧低濃度半導體區域
NH‧‧‧高濃度半導體區域
NZ‧‧‧噴嘴
NZa‧‧‧流入口
NZb‧‧‧吸入口
PC‧‧‧周邊部
PR‧‧‧光阻層
PRa‧‧‧光阻圖案
ST‧‧‧晶圓台
STI‧‧‧元件分離區域
SUB‧‧‧半導體基板
SP‧‧‧側壁絕緣膜
SW‧‧‧半導體晶圓
S1~S10‧‧‧步驟
VD‧‧‧氣泡
WF‧‧‧外周
W1‧‧‧第1周邊曝光區域內周
W2‧‧‧第2周邊曝光區域內周
WEE1‧‧‧第1周邊曝光區域
WEE2‧‧‧第2周邊曝光區域
WSG‧‧‧晶圓台引導件
【圖1】係液浸曝光的說明圖。 【圖2】係說明液浸曝光中氣泡包含在其中的圖。 【圖3】係顯示半導體裝置的處理流程之一部分的步驟流程圖。 【圖4】係顯示半導體裝置之製造步驟的要部剖面圖。 【圖5】係顯示接續圖4的半導體裝置之製造步驟的要部剖面圖。 【圖6】係顯示接續圖5的半導體裝置之製造步驟的要部剖面圖。 【圖7】係顯示接續圖6的半導體裝置之製造步驟的要部剖面圖。 【圖8】係顯示接續圖7的半導體裝置之製造步驟的要部剖面圖。 【圖9】係顯示接續圖8的半導體裝置之製造步驟的要部剖面圖。 【圖10】係顯示接續圖9的半導體裝置之製造步驟的要部剖面圖。 【圖11】係顯示接續圖10的半導體裝置之製造步驟的要部剖面圖。 【圖12】係顯示接續圖11的半導體裝置之製造步驟的要部剖面圖。 【圖13】係顯示接續圖12的半導體裝置之製造步驟的要部剖面圖。 【圖14】係顯示接續圖13的半導體裝置之製造步驟的要部剖面圖。 【圖15】係顯示曝光區域之半導體晶圓的俯視圖。
S1~S10‧‧‧步驟

Claims (14)

  1. 一種半導體裝置之製造方法，包含如下步驟： (a)準備具有略圓形的外周之半導體基板的步驟； (b)於該半導體基板上形成被加工膜的步驟； (c)於該被加工膜上形成化學增幅型光阻層的步驟； (d)在自該半導體基板之該外周起具有第1寬度的區域中，實施對該化學增幅型光阻層照射第1曝光光線之第1周邊曝光的步驟； (e)實施對該化學增幅型光阻層照射第2曝光光線之液浸曝光的步驟； (f)在自該半導體基板之該外周起具有第2寬度的區域中，實施對該化學增幅型光阻層照射第3曝光光線之第2周邊曝光的步驟； (g)在該(f)步驟後，藉由將該化學增幅型光阻層顯影處理，而將照射過該第2曝光光線及該第3曝光光線之區域的該化學增幅型光阻層去除，以形成具有第1圖案之光阻圖案的步驟；以及 (h)在該(g)步驟後，實施蝕刻該被加工膜俾以具有該第1圖案的步驟。
  2. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 該化學增幅型光阻層，係頂部無塗覆光阻(top coat-less resist)。
  3. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 該第2寬度，較該第1寬度更寬。
  4. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 該液浸曝光，係在透鏡與該化學增幅型光阻層之間保存有浸液的狀態下，一邊將該半導體基板對該透鏡掃描一邊進行。
  5. 如申請專利範圍第4項之半導體裝置之製造方法，其中， 該(e)步驟中，以包圍該半導體基板之周圍的方式，從該半導體基板之外周起離開既定距離而配置晶圓台引導件，在該浸液橫跨該晶圓台引導件與該半導體基板之狀態下，實施該液浸曝光。
  6. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 該第1曝光光線的波長，較該第2曝光光線的波長更長。
  7. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 在該(d)步驟與(e)步驟之間，進一步包含： (i)藉由純水將該化學增幅型光阻層之表面洗淨的步驟。
  8. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 在該(d)步驟與(e)步驟之間，進一步包含： (j)對該化學增幅型光阻層，進行第1溫度之第1熱處理的步驟。
  9. 如申請專利範圍第8項之半導體裝置之製造方法，其中， 在該(f)步驟與(g)步驟之間，進一步包含： (k)對該化學增幅型光阻層，進行第2溫度之第2熱處理的步驟； 該第1溫度，較該第2溫度更低。
  10. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 在該(h)步驟後，進一步包含： (l)於該半導體基板，形成具有該第1圖案之溝的步驟；以及 (m)於該溝內選擇性地埋入絕緣膜，形成元件分離區域的步驟。
  11. 如申請專利範圍第1項之半導體裝置之製造方法，其中， 該被加工膜係導體膜； 在該(h)步驟後，進一步包含： (n)在實施該蝕刻的該被加工膜之兩端，於該半導體基板之主面形成一對半導體層的步驟。
  12. 一種半導體裝置之製造方法，包含如下步驟： (a)準備具有略圓形的外周之半導體基板的步驟； (b)於該半導體基板上形成被加工膜的步驟； (c)於該被加工膜上形成化學增幅型光阻層的步驟； (d)在自該半導體基板之該外周起具有第1寬度的區域中，實施對該化學增幅型光阻層照射第1曝光光線之第1周邊曝光的步驟； (e)在自該半導體基板之該外周起具有第2寬度的區域中，實施對該化學增幅型光阻層照射第3曝光光線之第2周邊曝光的步驟； (f)實施對該化學增幅型光阻層照射第2曝光光線之液浸曝光的步驟； (g)在該(f)步驟後，藉由將該化學增幅型光阻層顯影處理，而將照射過該第2曝光光線及該第3曝光光線之區域的該化學增幅型光阻層去除，以形成具有第1圖案之光阻圖案的步驟；以及 (h)在該(g)步驟後，實施蝕刻該被加工膜俾以具有該第1圖案的步驟。
  13. 如申請專利範圍第12項之半導體裝置之製造方法，其中， 在該(d)步驟後實施該(e)步驟； 該第2寬度，較該第1寬度更寬。
  14. 如申請專利範圍第12項之半導體裝置之製造方法，其中， 在該(e)步驟後實施該(d)步驟； 該第2寬度，較該第1寬度更寬。
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