JP5816488B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5816488B2 JP5816488B2 JP2011184550A JP2011184550A JP5816488B2 JP 5816488 B2 JP5816488 B2 JP 5816488B2 JP 2011184550 A JP2011184550 A JP 2011184550A JP 2011184550 A JP2011184550 A JP 2011184550A JP 5816488 B2 JP5816488 B2 JP 5816488B2
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Classifications
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Description
トップコートレスレジストを用いた場合の、液浸露光のプロセスフローを図3および図4に示す。図3は、トップコートレスレジストを用いた場合の液浸露光のプロセスフローを示す工程フロー図であり、図4は、トップコートレスレジストを用いた場合の液浸露光のプロセスフローを示す要部断面図である。
ここで、θ1は、レジスト層3(上層レジスト)の表面3bにおけるリンス液24の接触角であり、θ2は、レジスト層3の直接下に位置する材料膜26の表面26aにおけるリンス液24の接触角である。ここで、表面3bは、現像後のリンス処理の際の、レジスト層3(レジストパターン3a)の表面(最上層の表面)に対応する。また、表面26aは、現像後のリンス処理の際の、レジストパターン3aのスペース部22から露出する材料膜26の表面(露出面)に対応している。また、θ1をレジスト層3の表面3bの接触角と称し、θ2を材料膜26の表面26aの接触角と称する場合もある。上記式1は、θ2−θ1≧0と表現することもできる。
CH2=C(X)COOYRf ・・・(化1)
で表される単量体から形成されるモノマーを重合して形成する。ここで、上記化1におけるXは、水素(H)原子、フッ素(F)原子、炭素数1〜20の直鎖状または分岐状アルキル基、炭素数1〜20の直鎖状または分岐状フルオロアルキル基、あるいは、CFX1X2基(但しX1及びX2は水素原子またはフッ素原子)である。また、上記化1におけるYは、直接結合、あるいは、炭素数1〜10のフッ素原子を含まない二価の有機基である。また、上記化1におけるRfは、炭素数4〜6の直鎖状または分岐状のフルオロアルキル基である。図13および図14に、上記化1で表される単量体から形成されるモノマーの例(化2〜化20)を示すが、これらに限定されるものではない。
図18および図19は、実施例1の半導体装置の製造工程を示す断面図であり、トレンチ型素子分離構造形成工程中の要部断面図が示されている。
図20〜図22は、実施例2の半導体装置の製造工程を示す断面図であり、トレンチ型素子分離構造形成工程中の要部断面図が示されている。
図24〜図26は、実施例3の半導体装置の製造工程を示す断面図であり、トレンチ型素子分離構造形成工程中の要部断面図が示されている。
図27〜図29は、実施例4の半導体装置の製造工程を示す断面図であり、トレンチ型素子分離構造形成工程中の要部断面図が示されている。
図30〜図32は、実施例5の半導体装置の製造工程を示す断面図であり、トレンチ型素子分離構造形成工程中の要部断面図が示されている。
2 反射防止膜
3 レジスト層
3a レジストパターン
3b 表面
3c 感光領域
4 露光光
11 残渣
12 マイクロブリッジ欠陥
13 blob欠陥(乾燥しみ)
14 液滴
15 現像難溶物
16 液滴
16a 液滴
17 乾燥しみ
21 現像液
22 スペース部
23 レジスト溶解物
24 リンス液
25 液滴
26 材料膜
26a 表面
30 ベース層
31 液滴
32 ベース層
33 フッ素化合物
34 有機膜
34a 有機膜用材料
41 半導体基板
42 酸化シリコン膜
43 窒化シリコン膜
44 反射防止膜
45 レジスト層
45a レジストパターン
45b 表面
46 ArF光
47 溝
48 素子分離用酸化シリコン膜
49 素子分離領域
51 下層膜
52 中間層
53 レジスト層
53a レジストパターン
53b 表面
54 レジスト層
54a レジストパターン
54b 表面
55 中間層
56 レジスト層
56a レジストパターン
56b 表面
57 撥水化剤薬液
61 アモルファスカーボン層
62 有機反射防止膜
63 レジスト層
63a レジストパターン
63b 表面
71 半導体基板
72 材料膜
73 レジスト層
73a レジストパターン
73b 表面
74 スペース部
81 半導体基板
82 素子分離領域
82a 溝
83 ゲート絶縁膜
84 金属シリサイド層
85 絶縁膜
86 反射防止膜
86a 表面
87 レジスト層
87a レジストパターン
87b 表面
91 絶縁膜
92 反射防止膜
92a 表面
93 レジスト層
93a レジストパターン
93b 表面
CNT コンタクトホール
EX n−型半導体領域
GE ゲート電極
LS レンズ
M1 配線
MK フォトマスク
MS メニスカス
NZ ノズル
NZa 流入口
NZb 吸入口
PG プラグ
PR レジスト層
PW p型ウエル
Qn nチャネル型MISFET
SD n+型半導体領域
ST ウエハステージ
SP サイドウォールスペーサ
SW 半導体ウエハ
TR 溝
Claims (14)
- (a)半導体基板を用意する工程、
(b)前記半導体基板上に第1材料膜を形成する工程、
(c)前記第1材料膜上にレジスト層を形成する工程、
(d)前記レジスト層を液浸露光する工程、
(e)前記(d)工程後、前記レジスト層を現像処理する工程、
(f)前記(e)工程後、前記半導体基板をリンス液でリンス処理する工程、
(g)前記(f)工程後、前記半導体基板を回転させて前記半導体基板を乾燥させる工程、
(h)前記(g)工程後、前記レジスト層をエッチングマスクとして前記第1材料膜をエッチングする工程、
を有し、
前記(e)工程では、前記レジスト層が現像処理によって除去された部分から前記第1材料膜が露出し、
前記(f)工程を行う際に、前記レジスト層から露出する前記第1材料膜の表面の撥水性が前記レジスト層の表面の撥水性よりも高いことを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(g)工程を行う際に、前記レジスト層から露出する前記第1材料膜の表面の撥水性は、前記レジスト層の表面の撥水性よりも高いことを特徴とする半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記(f)工程を行う際に、前記レジスト層の表面における前記リンス液の接触角をθ1とし、前記レジスト層から露出する前記第1材料膜の表面における前記リンス液の接触角をθ2としたときに、前記θ2は前記θ1 よりも大きいことを特徴とする半導体装置の製造方法。 - 請求項3記載の半導体装置の製造方法において、
前記(d)工程を行う際の前記レジスト層の表面における前記リンス液の接触角をθ3とすると、前記θ3は前記θ1よりも大きいことを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法において、
前記θ3は前記θ2よりも大きいことを特徴とする半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記θ2は80°以下であることを特徴とする半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記リンス液は純水であることを特徴とする半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記(e)工程で、現像液に触れることにより、前記レジスト層の表面の撥水性が低下することを特徴とする半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記(c)工程後で、前記(d)工程前に、
(c1)前記レジスト層の表面にトップコート層を形成する工程、
を更に有し、
前記(d)工程では、前記トップコート層が前記レジスト層の表面を構成し、
前記(e)工程では、現像液により、前記レジスト層の表面から前記トップコート層が除去されることを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記第1材料膜は、炭素を主要な成分として含む有機膜、もしくは、炭素およびシリコンを主要な成分として含む有機膜であり、
前記(b)工程では、前記第1材料膜形成用の薬液がフッ素樹脂を含有しており、前記薬液を前記半導体基板に塗布することで、前記フッ素樹脂が表面に偏析した前記第1材料膜を形成することを特徴とする半導体装置の製造方法。 - 請求項10記載の半導体装置の製造方法において、
前記フッ素樹脂は、
CH2=C(X)COOYRf ・・・(化1)
で表される単量体から形成されるモノマーを重合した樹脂であり、
前記化1におけるXは、水素原子、フッ素原子、炭素数1〜20の直鎖状または分岐状アルキル基、炭素数1〜20の直鎖状または分岐状フルオロアルキル基、あるいは、CFX1X2基であり、
前記化1におけるYは、直接結合、あるいは、炭素数1〜10のフッ素原子を含まない二価の有機基であり、
前記化1におけるRfは、炭素数4〜6の直鎖状または分岐状のフルオロアルキル基であり、
前記X1およびX2は、水素原子またはフッ素原子であることを特徴とする半導体装置の製造方法。 - 請求項11記載の半導体装置の製造方法において、
前記第1材料膜に含まれる前記フッ素樹脂は、前記(e)工程で用いられる現像液に溶解しないことを特徴とする半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記(b)工程後で、前記(c)工程前に、
(b1)前記第1材料膜の表面を、撥水化剤と溶剤とを含む撥水化剤薬液で処理することにより、前記第1材料膜の表面の撥水性を高める工程、
を更に有することを特徴とする半導体装置の製造方法。 - 請求項13記載の半導体装置の製造方法において、
前記撥水化剤は、フッ素系撥水化剤、シリコーン系撥水化剤、フッ素・シリコーン系撥水化剤、シランカップリング剤、シリル化剤、アルキル化剤およびアシル化剤のうち少なくともいずれか1種を含むことを特徴とする半導体装置の製造方法。
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