TW201614626A - Display device and electronic device - Google Patents
Display device and electronic deviceInfo
- Publication number
- TW201614626A TW201614626A TW104128872A TW104128872A TW201614626A TW 201614626 A TW201614626 A TW 201614626A TW 104128872 A TW104128872 A TW 104128872A TW 104128872 A TW104128872 A TW 104128872A TW 201614626 A TW201614626 A TW 201614626A
- Authority
- TW
- Taiwan
- Prior art keywords
- display period
- image display
- function
- still image
- image
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2092—Details of a display terminals using a flat panel, the details relating to the control arrangement of the display terminal and to the interfaces thereto
- G09G3/2096—Details of the interface to the display terminal specific for a flat panel
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
- G09G2310/0291—Details of output amplifiers or buffers arranged for use in a driving circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/08—Details of timing specific for flat panels, other than clock recovery
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0613—The adjustment depending on the type of the information to be displayed
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/10—Special adaptations of display systems for operation with variable images
- G09G2320/103—Detection of image changes, e.g. determination of an index representative of the image change
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
- G09G2330/021—Power management, e.g. power saving
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2370/00—Aspects of data communication
- G09G2370/08—Details of image data interface between the display device controller and the data line driver circuit
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2370/00—Aspects of data communication
- G09G2370/14—Use of low voltage differential signaling [LVDS] for display data communication
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Display Device Control (AREA)
- Thin Film Transistor (AREA)
- Control Of El Displays (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014180856 | 2014-09-05 | ||
| JP2014190964 | 2014-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201614626A true TW201614626A (en) | 2016-04-16 |
Family
ID=55437505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104128872A TW201614626A (en) | 2014-09-05 | 2015-09-01 | Display device and electronic device |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9886150B2 (enExample) |
| JP (2) | JP2016066065A (enExample) |
| KR (1) | KR102421232B1 (enExample) |
| TW (1) | TW201614626A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI771921B (zh) * | 2021-02-22 | 2022-07-21 | 瑞鼎科技股份有限公司 | 顯示驅動系統 |
| TWI792742B (zh) * | 2021-04-28 | 2023-02-11 | 聯發科技股份有限公司 | Hdmi設備及相應省電方法 |
| US11770583B1 (en) | 2022-07-21 | 2023-09-26 | Mediatek Inc. | HDMI device and power-saving method for immediately switching HDMI ports |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102261422B1 (ko) * | 2015-01-26 | 2021-06-09 | 삼성디스플레이 주식회사 | 표시 장치 |
| JP6660155B2 (ja) * | 2015-11-13 | 2020-03-04 | 株式会社Joled | 表示装置および電子機器 |
| CN108475491B (zh) | 2015-12-18 | 2021-04-20 | 株式会社半导体能源研究所 | 半导体装置以及包括该半导体装置的显示装置 |
| US10250247B2 (en) | 2016-02-10 | 2019-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic component, and electronic device |
| TWI753908B (zh) | 2016-05-20 | 2022-02-01 | 日商半導體能源硏究所股份有限公司 | 半導體裝置、顯示裝置及電子裝置 |
| TWI724059B (zh) * | 2016-07-08 | 2021-04-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置、顯示模組及電子機器 |
| US10255838B2 (en) | 2016-07-27 | 2019-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| KR102650333B1 (ko) * | 2016-08-10 | 2024-03-25 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 불휘발성 메모리 장치를 포함하는 스토리지 장치 |
| WO2018042288A1 (en) | 2016-08-30 | 2018-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Receiver for receiving differential signal, ic including receiver, and display device |
| CN116775543A (zh) | 2016-09-06 | 2023-09-19 | 株式会社半导体能源研究所 | 电子设备 |
| US10481731B2 (en) * | 2016-12-21 | 2019-11-19 | Stmicroelectronics Asia Pacific Pte Ltd | Concurrent sensing in touch screen controller with improved noise rejection |
| KR102636682B1 (ko) * | 2016-12-21 | 2024-02-15 | 엘지디스플레이 주식회사 | 표시장치와 그 구동방법 |
| JP7055799B2 (ja) * | 2017-05-22 | 2022-04-18 | 株式会社半導体エネルギー研究所 | 表示システム |
| TWI688938B (zh) | 2018-05-22 | 2020-03-21 | 元太科技工業股份有限公司 | 可抑制電磁干擾的顯示裝置及顯示驅動電路 |
| US11482155B2 (en) | 2018-07-20 | 2022-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Receiving circuit |
| US10674112B2 (en) | 2018-09-18 | 2020-06-02 | Samsung Electronics Co., Ltd. | Display driver circuit for adjusting framerate to reduce power consumption |
| CN108877731B (zh) * | 2018-09-20 | 2021-08-24 | 京东方科技集团股份有限公司 | 显示面板的驱动方法、显示面板 |
| US11087721B2 (en) * | 2018-11-28 | 2021-08-10 | Samsung Electronics Co., Ltd. | Display driver, circuit sharing frame buffer, mobile device, and operating method thereof |
| KR102611010B1 (ko) * | 2018-12-24 | 2023-12-07 | 주식회사 엘엑스세미콘 | 소스 구동 회로 |
| CN109410894B (zh) * | 2019-01-08 | 2021-01-26 | 京东方科技集团股份有限公司 | 生成差分输出信号的方法及模块、显示装置 |
| CN111489671B (zh) * | 2019-01-28 | 2023-12-15 | 厦门雅迅网络股份有限公司 | 一种车载lvds信号输出的自检电路 |
| KR102754883B1 (ko) * | 2019-04-09 | 2025-01-17 | 삼성전자주식회사 | 터치 센서를 포함하는 전자 장치 및 전자 장치에 포함되는 터치 센서의 구동 방법 |
| CN113436570B (zh) * | 2020-03-23 | 2022-11-18 | 京东方科技集团股份有限公司 | 一种像素电路及其驱动方法、显示基板和显示装置 |
| KR20230053011A (ko) * | 2021-10-13 | 2023-04-21 | 삼성디스플레이 주식회사 | 전자 장치 |
| KR20230053028A (ko) | 2021-10-13 | 2023-04-21 | 삼성디스플레이 주식회사 | 표시 장치와 그의 제조 방법 |
| CN116704929A (zh) * | 2022-03-04 | 2023-09-05 | 群创光电股份有限公司 | 电子装置 |
| KR20250010810A (ko) * | 2023-07-13 | 2025-01-21 | 삼성전자주식회사 | 전자 장치 및 전자 장치의 동작 방법 |
Family Cites Families (168)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
| JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
| JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
| JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
| JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
| EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
| JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
| JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
| JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
| JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
| TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
| US6353334B1 (en) | 2000-01-27 | 2002-03-05 | Xilinx, Inc. | Circuit for converting a logic signal on an output node to a pair of low-voltage differential signals |
| JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
| KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
| JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
| JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
| JP3755585B2 (ja) * | 2001-05-11 | 2006-03-15 | セイコーエプソン株式会社 | 表示コントローラ、表示ユニット及び電子機器 |
| JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
| JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
| JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
| WO2003040441A1 (fr) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin |
| JP2003302952A (ja) * | 2002-02-06 | 2003-10-24 | Ricoh Co Ltd | 表示装置 |
| JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
| CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
| JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
| US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
| JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
| US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
| US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
| JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
| JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
| US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
| US7592981B2 (en) * | 2003-08-05 | 2009-09-22 | Toshiba Matsushita Display Technology Co., Ltd. | Circuit for driving self-luminous display device and method for driving the same |
| CN1998087B (zh) | 2004-03-12 | 2014-12-31 | 独立行政法人科学技术振兴机构 | 非晶形氧化物和薄膜晶体管 |
| US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
| US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
| US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
| JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
| US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
| US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
| KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
| CA2585190A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
| US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
| US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
| US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
| US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
| US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
| US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
| TWI472037B (zh) | 2005-01-28 | 2015-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| TWI569441B (zh) | 2005-01-28 | 2017-02-01 | 半導體能源研究所股份有限公司 | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
| US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
| US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
| US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
| US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
| JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
| US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
| KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
| JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
| JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
| JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
| JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
| JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
| WO2007058329A1 (en) | 2005-11-15 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| TW200721064A (en) * | 2005-11-29 | 2007-06-01 | Novatek Microelectronics Corp | Timing controller chip |
| TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
| US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
| JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
| KR100840462B1 (ko) * | 2006-01-31 | 2008-06-20 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 화상 표시 장치 전송 인터페이스 |
| US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
| US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
| KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
| JP4868926B2 (ja) * | 2006-04-21 | 2012-02-01 | キヤノン株式会社 | 放射線撮像装置 |
| US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
| JP2007322501A (ja) * | 2006-05-30 | 2007-12-13 | Canon Inc | アクティブマトリクス基板、反射型液晶表示装置、及び投影型表示装置 |
| JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
| JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
| JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
| JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
| US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
| JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
| KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
| US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
| KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
| KR101031694B1 (ko) * | 2007-03-29 | 2011-04-29 | 도시바 모바일 디스플레이 가부시키가이샤 | El 표시 장치 |
| US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
| KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
| KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
| CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
| KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
| JP2009014842A (ja) * | 2007-07-02 | 2009-01-22 | Nec Electronics Corp | データ線駆動回路、表示装置、及びデータ線駆動方法 |
| JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
| JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
| JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
| KR101515468B1 (ko) | 2008-12-12 | 2015-05-06 | 삼성전자주식회사 | 표시장치 및 그 동작방법 |
| US20150138086A1 (en) * | 2009-04-02 | 2015-05-21 | John S. Underkoffler | Calibrating control device for use with spatial operating system |
| KR101801540B1 (ko) | 2009-10-16 | 2017-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기 |
| CN116343705B (zh) | 2009-10-16 | 2025-08-26 | 株式会社半导体能源研究所 | 显示设备 |
| CN102576172B (zh) | 2009-10-30 | 2016-01-27 | 株式会社半导体能源研究所 | 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器 |
| KR102329497B1 (ko) | 2009-11-13 | 2021-11-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이 표시 장치를 구비한 전자 기기 |
| WO2011065230A1 (en) | 2009-11-30 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device, method for driving the same, and electronic device including the same |
| KR101840623B1 (ko) * | 2009-12-04 | 2018-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 이를 포함하는 전자 기기 |
| WO2011074379A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
| KR102135817B1 (ko) * | 2009-12-18 | 2020-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 기기 |
| WO2011074393A1 (en) | 2009-12-18 | 2011-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
| WO2011077925A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving liquid crystal display device |
| KR101750126B1 (ko) | 2010-01-20 | 2017-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 액정 표시 장치 |
| CN102713999B (zh) | 2010-01-20 | 2016-01-20 | 株式会社半导体能源研究所 | 电子设备和电子系统 |
| KR101842860B1 (ko) | 2010-01-20 | 2018-03-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 |
| KR101883331B1 (ko) | 2010-01-20 | 2018-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 표시 장치의 구동 방법 |
| KR102069496B1 (ko) | 2010-01-24 | 2020-01-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP2011158532A (ja) * | 2010-01-29 | 2011-08-18 | Seiko Epson Corp | 画像表示装置およびプログラム並びに画像表示制御方法 |
| WO2011096153A1 (en) | 2010-02-05 | 2011-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| KR101814222B1 (ko) | 2010-02-12 | 2018-01-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 장치 |
| KR101848684B1 (ko) | 2010-02-19 | 2018-04-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 전자 장치 |
| CN106328085B (zh) | 2010-02-26 | 2020-07-28 | 株式会社半导体能源研究所 | 显示设备及其驱动方法 |
| TW201732525A (zh) | 2010-03-08 | 2017-09-16 | 半導體能源研究所股份有限公司 | 電子裝置及電子系統 |
| DE112011100840T5 (de) | 2010-03-08 | 2013-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtung |
| WO2011111504A1 (en) | 2010-03-08 | 2011-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device and electronic system |
| KR101879570B1 (ko) | 2010-04-28 | 2018-07-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 제작 방법 |
| US9349325B2 (en) | 2010-04-28 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic device |
| WO2011136018A1 (en) | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and electronic appliance |
| US9697788B2 (en) | 2010-04-28 | 2017-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US9064473B2 (en) | 2010-05-12 | 2015-06-23 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device and display method thereof |
| US9478185B2 (en) | 2010-05-12 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device and display method thereof |
| WO2011145707A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
| CN102906980B (zh) | 2010-05-21 | 2015-08-19 | 株式会社半导体能源研究所 | 半导体装置及显示装置 |
| US9336739B2 (en) | 2010-07-02 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| US8605059B2 (en) | 2010-07-02 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and driving method thereof |
| TWI541782B (zh) | 2010-07-02 | 2016-07-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP5825895B2 (ja) | 2010-08-06 | 2015-12-02 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP5832181B2 (ja) | 2010-08-06 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP5848912B2 (ja) * | 2010-08-16 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 液晶表示装置の制御回路、液晶表示装置、及び当該液晶表示装置を具備する電子機器 |
| US9230994B2 (en) | 2010-09-15 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
| JP2012159633A (ja) * | 2011-01-31 | 2012-08-23 | Seiko Epson Corp | アクティブマトリクス基板、電気光学装置及び電子機器 |
| JP5290481B2 (ja) | 2011-04-07 | 2013-09-18 | シャープ株式会社 | 表示装置、その駆動方法および電子機器 |
| WO2012137761A1 (ja) * | 2011-04-07 | 2012-10-11 | シャープ株式会社 | 表示装置および駆動方法 |
| US8866783B2 (en) * | 2011-04-08 | 2014-10-21 | Sharp Kabushiki Kaisha | Display device, method for driving same, and electronic apparatus |
| US9111795B2 (en) | 2011-04-29 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor connected to memory element through oxide semiconductor film |
| WO2012157532A1 (en) | 2011-05-16 | 2012-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Programmable logic device |
| US8779799B2 (en) | 2011-05-19 | 2014-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit |
| JP2013009118A (ja) * | 2011-06-23 | 2013-01-10 | Panasonic Corp | 差動入力インターフェース回路、表示ドライバic、表示パネルモジュールおよび画像表示装置 |
| KR101859219B1 (ko) * | 2011-07-25 | 2018-05-18 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
| WO2013024754A1 (ja) * | 2011-08-12 | 2013-02-21 | シャープ株式会社 | 表示装置 |
| TWI639150B (zh) | 2011-11-30 | 2018-10-21 | 日商半導體能源研究所股份有限公司 | 半導體顯示裝置 |
| JP2012063790A (ja) * | 2011-12-14 | 2012-03-29 | Sanyo Electric Co Ltd | 表示装置 |
| US8995218B2 (en) | 2012-03-07 | 2015-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| KR102068165B1 (ko) * | 2012-10-24 | 2020-01-21 | 삼성디스플레이 주식회사 | 타이밍 컨트롤러 및 이를 포함하는 표시 장치 |
| KR102115530B1 (ko) * | 2012-12-12 | 2020-05-27 | 삼성디스플레이 주식회사 | 표시 장치 및 그 구동 방법 |
| US9318484B2 (en) * | 2013-02-20 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2014194540A (ja) * | 2013-02-28 | 2014-10-09 | Semiconductor Energy Lab Co Ltd | 画像情報の処理および表示方法、プログラム、情報処理装置 |
| JP6204033B2 (ja) * | 2013-03-14 | 2017-09-27 | シナプティクス・ジャパン合同会社 | ドライバic |
-
2015
- 2015-09-01 TW TW104128872A patent/TW201614626A/zh unknown
- 2015-09-01 JP JP2015171708A patent/JP2016066065A/ja not_active Withdrawn
- 2015-09-03 US US14/844,344 patent/US9886150B2/en active Active
- 2015-09-04 KR KR1020150125350A patent/KR102421232B1/ko active Active
-
2018
- 2018-01-12 US US15/870,141 patent/US10452218B2/en not_active Expired - Fee Related
-
2020
- 2020-04-06 JP JP2020068288A patent/JP7032472B2/ja not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI771921B (zh) * | 2021-02-22 | 2022-07-21 | 瑞鼎科技股份有限公司 | 顯示驅動系統 |
| TWI792742B (zh) * | 2021-04-28 | 2023-02-11 | 聯發科技股份有限公司 | Hdmi設備及相應省電方法 |
| US11770583B1 (en) | 2022-07-21 | 2023-09-26 | Mediatek Inc. | HDMI device and power-saving method for immediately switching HDMI ports |
Also Published As
| Publication number | Publication date |
|---|---|
| US10452218B2 (en) | 2019-10-22 |
| KR102421232B1 (ko) | 2022-07-15 |
| JP2016066065A (ja) | 2016-04-28 |
| KR20160029708A (ko) | 2016-03-15 |
| JP2020115230A (ja) | 2020-07-30 |
| JP7032472B2 (ja) | 2022-03-08 |
| US9886150B2 (en) | 2018-02-06 |
| US20160070386A1 (en) | 2016-03-10 |
| US20180224961A1 (en) | 2018-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201614626A (en) | Display device and electronic device | |
| ZA201905223B (en) | Electronic device with display panel | |
| EP3667655A4 (en) | PIXEL UNIT CIRCUIT, PIXEL CIRCUIT, ATTACK PROCESS AND DISPLAY DEVICE | |
| GB2534779B (en) | Driving circuit and method of driving liquid crystal panel and liquid crystal display | |
| GB2541612B (en) | LED backlight driving circuit and liquid crystal display device | |
| IN2015DN02386A (enExample) | ||
| TW201614627A (en) | Display device | |
| GB2548282B (en) | GOA circuit and liquid crystal display device applied to liquid crystal displays | |
| WO2016056858A3 (en) | Method for sharing screen and electronic device thereof | |
| EP3657486A4 (en) | CLOCK SIGNAL OUTPUT CIRCUIT AND LIQUID CRYSTAL DISPLAY DEVICE | |
| JP2016066065A5 (enExample) | ||
| EP3159884A3 (en) | Scan driver, display device, and method of driving display device | |
| EP2916178A3 (en) | Electronic timepiece and movement | |
| EP3618046A4 (en) | DISPLAY PANEL, PIXEL ATTACK CIRCUIT AND ASSOCIATED ATTACK PROCESS | |
| WO2012134190A3 (en) | Display apparatus | |
| GB2557552B8 (en) | A scanning driving circuit and the liquid crystal display apparatus with the scanning driving circuit thereof | |
| EP3618045A4 (en) | DISPLAY BOARD, PIXEL CONTROL CIRCUIT AND PIXEL CONTROL PROCEDURE | |
| EP3709286A4 (en) | LIQUID CRYSTAL DISPLAY PANEL AND GRID ATTACK CIRCUIT | |
| EP2916180A3 (en) | Timepiece and electronic timepiece | |
| GB201309586D0 (en) | Display panel driving and scanning method and system | |
| PL3640929T3 (pl) | Panel wyświetlacza zawierający obwód sterujący pikselami oraz sposób jego sterowania | |
| GB201706900D0 (en) | Drive circuit of liquid crystal panel and liquid crystal display device | |
| GB2576396B (en) | Stretchable display device, panel driving circuit and the method of driving the same | |
| GB2532625A (en) | Assembly of multiple flexible displays | |
| GB2547577B (en) | Liquid crystal display device and gate driving circuit thereof |