TW201547054A - 製造發光裝置之方法 - Google Patents

製造發光裝置之方法 Download PDF

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Publication number
TW201547054A
TW201547054A TW104129561A TW104129561A TW201547054A TW 201547054 A TW201547054 A TW 201547054A TW 104129561 A TW104129561 A TW 104129561A TW 104129561 A TW104129561 A TW 104129561A TW 201547054 A TW201547054 A TW 201547054A
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Taiwan
Prior art keywords
light
phosphor
layer
ceramic
luminescent
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TW104129561A
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English (en)
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TWI622186B (zh
Inventor
Michael R Krames
Gerd O Mueller
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Philips Lumileds Lighting Co
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Publication of TW201547054A publication Critical patent/TW201547054A/zh
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Publication of TWI622186B publication Critical patent/TWI622186B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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Abstract

一種諸如磷光體的材料光學耦合至一半導體結構，該半導體結構包含一配置在一n型區域和一p型區域之間的發光區域，以便有效地從該發光區域吸取光線入該磷光體內。該磷光體可為與該半導體結構之一表面直接接觸的諸磷光體顆粒，或一黏合至該半導體結構或該半導體結構可成長於其上的一薄晶核結構之陶瓷磷光體。該磷光體較佳地具有高吸收性與高效率。當該半導體結構發光進入此一高效率、高吸收性磷光體內時，該磷光體可有效地從該結構吸取光線，從而減少以前技術的諸裝置中出現的該光學損失。

Description

製造發光裝置之方法
本發明係關於波長轉換之半導體發光裝置。
包括發光二極體(LED)、共振腔式發光二極體(RCLED)、面射型半導體雷射二極體(VCSEL)、及側射型半導體雷射等半導體發光裝置是可獲得之最有效光源中的一些。目前在能在包括可見光譜的範圍中操作之高光度發光裝置的製造中受重視的材料系統包括III-V族半導體，特別是鎵、鋁、銦、和氮的二元、三元及四元合金等，也稱為III-族氮化物材料，及鎵、鋁、銦、和磷的二元、三元及四元合金等，也稱為III-族磷化物材料。一般而言，III-族氮化物發光裝置係藉金屬-有機化學氣相沉積(MOCVD)、分子束磊晶(MBE)、或其他磊晶技術在一藍寶石、氮碳化物、III-族氮化物、或其他適當基板上以磊晶方式長出一疊不同成分與摻雜物濃度之半導體層製造成的。該疊層經常包括形成在該基板上方之一或更多個以譬如矽(Si)摻雜之n型層、形成在該(等)n型層上的一發光或主動區域、及形成在該主動區域上方之一或更多個以譬如錳(Mg)摻雜之p型層。形成於諸導體基板上之III-族氮化物裝置可讓該等p型與n型接觸器形成在該裝置的諸相反側上。經常地，III-族氮化物裝置係在諸如藍寶石等絕緣基板上製造而讓二接觸器都在該裝置的相同側上。此類裝置安裝的方式係使光線或則透過該等接觸器(稱為磊晶上裝置)或則透過該裝置與該等接觸器相 反的一表面(稱為覆晶裝置)吸取。
圖1顯示一更詳細地描述於美國專利6,650,044中之III-族氮化物覆晶裝置的一範例。LED 2包括一第一導通型式的第一半導體層10及一第二導通型式的第二半導體層12。諸半導體層10與12電氣耦合至主動區域14。主動區域14譬如是一與諸層10及12的該介面關聯之p-n接合面。或替代性地，主動區域14包括一或更多個摻雜成n型式或p型式或未摻雜之半導體層。可選擇使用的透明覆板16配置在半導體層10上。諸接觸器18與20分別電氣耦合至諸半導體層10與12。主動區域14在施加一適當電壓於諸接觸器18與20之間時發射光線。諸相互連接線22與24分別將諸接觸器18與20電氣耦合至諸基板接觸器26與28。在一實施例中，諸半導體層10與12及主動區域14係由諸如AlxInyGaz,N複合物等III-族氮化物複合物形成，且主動區域14以譬如約470毫微米的一波長發射藍光。可選擇使用之透明覆板16譬如由藍寶石或矽碳化物形成。基板4譬如包括矽。請參考美國專利6,650,044第3欄第40-63行。
因為藍寶石的高溫穩定性與相當容易製造，所以III-族氮化物發光二極體結構經常成長在藍寶石基板上。一藍寶石基板的使用會導致低吸取效率，因為在等半導體層與該基板間的該介面處有大的折射係數差異。當光線入射到二材料間的一介面上時，該折射係數差異決定有多少光線在該介面處被全反射回內部及有多少光線穿過該介面。該折射係數差異越大，被反射的光線越多。藍寶石之折射係數(1.8)相較於成長在該藍寶石上的該等III-族氮化物裝置層的折射係數(2.4)為低。因此，該等III-族氮化物裝置層內產生之該光線的一大部分在其抵達該等半導體層與一藍寶石基板間的該介面時被反射。該被全反射之光線在被吸取之前須散播並穿越該裝置許多次。這些多次穿越造成該光線的大幅衰減，該衰減肇因於在諸接觸器處之光學損失、自由載子吸收及在該等III-族氮化物裝置層的任一層內之頻帶間吸收。使用 一折射係數與該III-族氮化物材料之折射係數更接近地匹配的其他成長基板會減少但一般無法完全消除該等光學損失。類似地，由於該等III-族氮化物材料與空氣間的折射係數大差異，所以去除該成長基板也不會消除該等光學損失。
根據本發明之諸實施例，一種諸如磷光體的材料光學耦合至一半導體結構，該半導體結構包含一配置在一n型區域和一p型區域之間的發光區域，以便有效地從該發光區域吸取光線入該磷光體內。該磷光體可為與該半導體結構之一表面直接接觸的諸磷光體顆粒，或一黏合至該半導體結構或該半導體結構可成長於其上的一薄晶核結構之陶瓷磷光體。該磷光體較佳地具有高吸收性與高效率。當該半導體結構發光進入此一高效率、高吸收性磷光體內時，該磷光體可有效地從該結構吸取光線，從而減少以前技術的諸裝置中出現的該光學損失。
2‧‧‧二極體
10‧‧‧第一導通型式的第一半導體層
12‧‧‧第二導通型式的第二半導體層
14‧‧‧主動區域
16‧‧‧透明覆板
18,20‧‧‧接觸器
22,24‧‧‧相互連接線
26,28‧‧‧基板接觸器
30‧‧‧磷光體承載層
32‧‧‧光學耦合媒體
34‧‧‧磷光體顆粒
36‧‧‧磊晶層
38‧‧‧主基板
50‧‧‧金屬層
52‧‧‧陶瓷磷光體
54‧‧‧反射器
56‧‧‧黏膠
58‧‧‧晶核結構
60‧‧‧p接觸器
61‧‧‧n接觸器
62‧‧‧反射器
72‧‧‧植入物
74‧‧‧植入層
78‧‧‧p+材料
100‧‧‧散熱金屬塊
102‧‧‧反射器杯狀物
103‧‧‧熱導通次黏著基台
104‧‧‧發光裝置晶粒
105‧‧‧填充塑膠材料
106‧‧‧金屬框架
108‧‧‧蓋子
130‧‧‧半導體結構
132‧‧‧封裝元件
134‧‧‧金屬介面
圖1顯示一以前技術之覆晶III-族氮化物發光裝置。
圖2顯示根據本發明之一實施例的一磷光體轉換III-族氮化物發光裝置。
圖3顯示在一成長基板上成長之一III-族氮化物發光裝置的諸磊晶層。
圖4顯示黏合至一主基板之一III-族氮化物發光裝置的該等磊晶層。
圖5與6顯示根據本發明之諸實施例的諸磷光體轉換III-族氮化物發光裝置。
圖7、8與9顯示製造圖5與6中所示該等裝置的一方法。
圖10與11顯示製造圖5與6中所示該等裝置的一替代性方法。
圖12是一經封裝之發光裝置的一分解圖。
圖13顯示黏合至一封裝元件之圖5的該裝置。
圖1中所示該以前技術的裝置包括一承載一磷光體的層30。諸磷光體是諸發冷光材料，該等發冷光材料可吸收一激發能量(經常是輻射能量)，然後將該吸收的能量以一與該初始激發能量不同的輻射能量發射。現今技術的諸磷光體具有接近100%的量子效率，意指幾乎所有以激發能量方式提供之光子均由該磷光體再發射出。現今技術的諸磷光體也具有高吸收能力。若一發光裝置可將光線直接發射入此一高效率、高吸收力的磷光體內，則磷光體可有效地從該裝置吸取光線，從而減少上述該光學損失。
圖1中所述該裝置不利用磷光體的這些特性。在圖1中所述該裝置內，基板16將磷光體層30與該等III-族氮化物裝置區域10、12及14分離。如上文所述，此光線因為該等裝置層與該基板之間的該介面處之折射係數差異而被抑制在該等半導體層內。
根據本發明之諸實施例，一磷光體密切地耦合至一裝置內的該等半導體層之一以促進光線之有效吸取。圖2顯示本發明之一第一實施例，其中磷光體之諸顆粒沉積在當該成長基板被移除時暴露的一裝置的一III-族氮化物表面上。諸磷光體顆粒34沉積在一n型區域10表面上。該等磷光體顆粒34與n型區域10直接接觸，以使從主動區域14發射之光線直接耦合至諸磷光體顆粒34。一光學耦合媒體32可加以配置以將諸磷光體顆粒34置於定位。光學耦合媒體32被選擇以具有一比上述該等傳統黏合劑之折射係數為高的折射係數-譬如高於1.5-且盡可能地接近而不大幅超過n型區域10之該折射係數。為了最有效的操作起見，沒有耗損媒體包括在n型區域10、諸磷光體顆粒34、及光學耦合媒體32之間。諸磷光體顆粒34一般具有一介於0.1與20微米之間的顆粒大小，且更典型地具有一介於1與8微米之間的磷光體顆粒大小。
圖2中所示該裝置可藉在一傳統成長基板上成長該等裝置層、將該等裝置層黏合至一主基板、然後移除該成長基板而形成。圖3顯示成長在一傳統成長基板16上的該等裝置層。N型區域10成長在基板16上方。N型區域10可包括諸如諸緩衝層或諸晶核層的諸選用準備層，及諸選用剝離層，該等剝離層被設計以促進該成長基板的剝離或該等磊晶層在基板移除之後之薄化。主動區域14成長在n型區域10上方，接著成長p型區域12。譬如包括諸歐姆接觸層、諸反射層、諸阻障層及諸黏合層的一或更多個金屬層50沉積在p型區域12上方。
然後，該等裝置層如圖4中所示般經由諸金屬層50的該暴露表面黏合至一主基板38。一或更多個黏合層(未顯示)一般為金屬-可做為該磊晶結構與該主基板之間做熱壓接合或共熔接合所用之柔性襯墊材料。適當黏合層金屬的諸範例包括金與銀。主基板38在該成長基板移除之後為該等磊晶層提供機械支撐，並提供電氣接觸給p型區域12。主基板38一般被選擇為電氣導通材料(亦即小於約0.1Ωcm)、具熱導通性、具有一與該等磊晶層之熱膨脹係數匹配的熱膨脹係數(CTE)、且夠平坦(亦即具有一小於約10毫微米之均方根粗糙度)以形成一強晶片黏合。適當的諸材料譬如包括諸如銅、鉬、銅/鉬及銅/鎢等金屬；諸如具有諸歐姆接觸之矽及具有譬如鈀、鍺、鈦、金、鎳、銀中的一個或更多個的諸歐姆接觸之砷化鎵等具有諸金屬接觸之諸半導體；及諸如氮化鋁、壓縮鑽石或藉化學氣相沉積法成長之諸鑽石層等陶瓷。
該等裝置層可在一晶片尺寸下黏合至主基板38，以使一整個裝置晶片可黏合至一主基板晶片，然後該等各別裝置在黏合之後被切塊。或者，一個晶片的諸裝置可切塊成個別裝置，然後各裝置以一晶塊粒尺寸被黏合至主基板38。
主基板38與諸磊晶層10、12及14在提高的溫度與壓力下壓在一起以在主基板38與諸金屬層50之間的該介面處形成一耐用的黏合，譬 如在諸金屬黏合層(未顯示)之間的該介面處形成之一耐用金屬黏合。用做黏合的該溫度與壓力範圍在該較低端受限於該完成黏合之該強度且在該較高端受限於該主基板結構、金屬連線及該磊晶結構之該穩定度。譬如，諸高溫及/或諸高壓會造成該等磊晶層之分解、諸金屬接觸從堆疊剝離、擴散阻障失效或該等磊晶層內諸構成材料之加熱去除。一適當溫度範圍譬如是約200℃到約500℃。一適當壓力範圍譬如是約100psi到約300psi。
為了要移除一藍寶石成長基板，介於基板16與結晶體區域10間之該介面的部分透過基板16以一階段且重複圖樣暴露至一高通量脈衝紫外線雷射。該等暴露部分可藉穿過該裝置的該等結晶體層蝕刻之諸溝槽加以隔絕，以隔絕由暴露至該雷射造成之該震波。該雷射之該光子能量高於鄰接於該藍寶石之該結晶體層(在某些實施例中為氮化鎵)的該能量間隙，因此該脈衝能量可在鄰接於該藍寶石的頭100毫微米磊晶材料內有效地轉換成熱能量。在足夠高的通量(亦即大於約1.5J/cm2)及一高於氮化鎵之該能量間隙且低於藍寶石之該吸收邊緣的光子能量(亦即介於約3.44與約6eV之間)下，該頭100毫微米內之該溫度在一以毫微秒計算的時間內上升至一高於1000℃的溫度，該溫度高得足以讓該氮化鎵分離成鎵與氮氣體，從而將該等磊晶層從基板16剝離。該完成的結構包括黏合至主基板38之諸磊晶層10、12與14。任何適用於該特別成長基板之移除技術都可使用。譬如，在某些實施例中，諸如矽、碳化矽、以矽為基礎之特殊設計基板、及砷化鎵等成長基板可藉諸如蝕刻、研磨或二者的一組合來移除。
在該成長基板移除之後，該等剩餘的磊晶層可加以減薄，譬如以便移除n型區域10最接近基板16及低材料品質的部分。該等磊晶層可譬如藉化學機械拋光、傳統乾蝕刻、或光電化學蝕刻(PEC)減薄。該等磊晶層之該頂部表面可被紋理化或粗糙化以增加吸取的光線量。 一接觸器18接著形成在n型區域10上。接觸器18可譬如為一格柵。接觸器18下方之諸磊晶層-圖2之區域36-可以譬如氫植入以防止光線從接觸器18下方之該主動區域14的該部分射出。
諸磷光體顆粒34接著直接沉積在n型區域10之該暴露表面上。諸磷光體顆粒34藉譬如電泳沉積、旋轉塗佈、噴鍍、網印或其他印刷技術鋪在該表面上。在諸如旋轉塗佈或噴鍍等技術中，該磷光體可配置在一具有一有機黏合劑之漿料中，該黏合劑接著在該漿料沉積之後譬如藉加熱而蒸發。接著可鋪上耦合媒體32。磷光體粒子本身可為奈米粒子，亦即大小範圍從100到1000奈米之粒子。圓球狀磷光體粒子-一般由噴霧熱裂解方法或其他方法產生-可被鋪上，從而產生一具有一高封裝密度的層，這提供有利的散佈特性。而且，磷光體粒子可譬如用一材料加以鍍膜，該材料之一能量間隙大於由該磷光體發射之光線的能量間隙，該材料譬如是SiO2、Al2O3、MePO4或聚磷酸鹽，或其他適當的金屬氧化物。
耦合媒體32譬如可為藉化學氣相沉積法沉積之SiNx或一高折射率玻璃。高折射率玻璃的諸範例包括肖特(Shott)玻璃SF59、肖特玻璃LaSF 3、肖特玻璃LaSF N18、及其混合物。這些玻璃可從Duryea,Pa之肖特玻璃技術公司(Schott Glass Technologies Incorporated)獲得。其他諸高折射率耦合媒體的諸範例包括諸如(鍺、銻、鎵)(硫、硒)硫化物玻璃之高折射率硫化物玻璃、包括但不侷限於GaN之III-V族半導體、包括但不侷限於ZnS、ZnSe、ZnTe、ZnO、CdS、CdSe與CdTe之II-VI族半導體、有機半導體、包括但不侷限於鎢氧化物、鈦氧化物、鎳氧化物、鋯氧化物、銦錫氧化物、及鉻氧化物之金屬氧化物、諸如氧化鋁及尖晶石的以鋁為基礎之氧化物、包括但不侷限於鎂氟化物及鈣氟化物之金屬氟化物、包括但不侷限於鋅、銦、鎂及錫之金屬、磷化物混合物、砷化物化合物、銻化物化合物、氮化物化合物、高折射 率有機化合物、及其混合物或合金。
適當的耦合媒體之諸其他範例是高折射率奈米粒子，該等奈米粒子被納入一黏合媒體內，然後注入磷光體層34中。在此類實施例中，諸奈米粒子具有一在該發光區域發射之光線的諸波長下比該黏合媒體之折射係數為高之折射係數。該等奈米粒子被配發入大致透明的黏合媒體內。該等奈米粒子被選擇以具有小於由該發光區域發射之光線的約一波長(譬如一峰值波長)的直徑，且因此基本上不散射該發射光線。較佳的是，該等奈米粒子具有小於該發光區域的一峰值發射波長之約1/4的直徑。譬如，在該發光區域發射具有大於約400奈米波長之光線的一裝置中，該等奈米粒子可具有約2奈米到約50奈米的直徑。該黏合媒體大致透明，意指其在由該發光區域發射之一峰值波長下以小於約25%-較佳地小於約10%，更較佳地小於約2%-的肇因於吸收或散射之單次通過損失傳送光線。該黏合媒體可為有機的或無機的，且可包括譬如包括但不侷限於傳統樹脂、丙烯酸聚合物、聚碳酸脂、矽聚合物、光學玻璃、硫化物玻璃、螺旋型化合物及其混合物等材料。該等奈米粒子在由該發光區域發射之波長-特別是在峰值發射波長-下基本上不吸收光線。本文中使用"基本上不吸收"及"大體上不吸收"諸詞來表示該等奈米粒子在此類實施例中是充分地不吸收以致其不增加由該密封材料發射之光線的該單次通過損失到多於約30%，較佳地不多於約20%。本領域中普通技術者會了解肇因於由該等奈米粒子對由該發光區域發射之光線的吸收之損失視該等各別奈米粒子的該吸收截面積、該黏合媒體內之該奈米粒子濃度而定，且可能視該等奈米粒子與該週遭材料間之諸交互作用而定。此類實施例適用的奈米粒子可包括但不侷限於金屬氧化物、氮化物、磷化物、氮矽化物及其混合物之奈米粒子。適當的金屬氧化物可包括但不侷限於鈣氧化物、鈰氧化物、鉿氧化物、鈦氧化物、鋅氧化物、鋯氧化物及其組合物。 具有譬如從約2奈米到約10奈米範圍之大小的此類金屬氧化物之奈米粒子可譬如從德國法蘭克福之德古薩胡爾斯公司(Degussa-Huls AG)獲得。此類實施例適用的奈米粒子也可包括諸如鋅硫化物、鋅硒化物、鎘硫化物、鎘硒化物、鎘鍗化物及其三元或四元混合物之II-VI族半導體奈米粒子、及諸如III族氮化物、III族磷化物及其混合物之III-V族半導體奈米粒子。也可使用雙重或多重外殼奈米粒子。諸奈米粒子可以上文所述之一以前製程步驟懸浮在該黏合媒體內或鍍膜於該磷光體上。
一適當的耦合媒體之一進一步範例是藉一溶膠-凝膠製程灌注入諸磷光體顆粒34內的一高折射率玻璃。任何有機物則藉後續的退火程序加以移除。在該黏合媒體是一溶膠-凝膠玻璃的諸實施例中，諸如鈦、硒、鉛、鎵、鉍、鎘、鋅、鋇或鋁的氧化物之一或更多種材料可包含入該二氧化矽溶膠-凝膠玻璃內以增加該玻璃之該折射係數，以便將該玻璃之該折射係數與該磷光體及該裝置的該III-族氮化物層之折射係數緊密地匹配。譬如，一Ya3Al5O12：Ce3+磷光體可具有一介於約1.75與1.8之間的折射係數，且可附接至一具有一約2.4之折射係數的III-族氮化物層。在此一裝置的一較佳實施例中，該耦合媒體之該折射係數介於該Ya3Al5O12：Ce3+與該III-族氮化物層的折射係數之間。譬如在納入本發明說明書中供卓參之費比斯(Fabes)等人的"Porosity and composition effects in sol-gel derived interference filters,"Thin Solid Films 254(1995)175~180頁，引述一具有一計算所得理論折射係數為n=1.85之SiO2-TiO2-Al2O3鍍膜溶液。磷光體可用此一溶液做灌注以形成一磷光體及鍍膜溶液漿液，然後譬如藉旋轉鍍膜法將該漿液沉積在該裝置的該表面上、乾燥、然後在該鍍膜溶液適合的一溫度下烘焙。
諸如二色向器件或偏光板等本技術領域中已知的次要光學器件 可在該等磷光體顆粒34、耦合媒體32、及接觸器18之前或之後施加在該發射表面上，以提供進一步的亮度增益或轉換效率。
圖5與6舉例說明本發明之諸實施例，其中該磷光體是一陶瓷磷光體而非一磷光體粉末。一陶瓷磷光體可藉在高壓下加熱一磷光體粉末直到該等磷光體粒子之該表面開始軟化並融解而形成。該等部分融解之粒子黏合在一起以形成一剛性粒子團塊。可能需要對該事先形成之"綠體"做單軸或均衡加壓步驟及真空燒結以形成一多晶陶瓷層。該陶瓷磷光體之半透明度-意即其產生之散射量-可藉調整該加熱或加壓條件、該製造方法、使用之該磷光體粒子先驅體、及該磷光體材料之該適當晶格而加以控制使從高不透明到高透明。除了磷光體之外，還可譬如包括諸如氧化鋁等其他陶瓷形成材料以促進該陶瓷之形成或調整該陶瓷之該折射係數。
一薄膜在光學上的行為像是一沒有光學不連續之單一大磷光體粒子，一陶瓷磷光體與之不同，陶瓷磷光體的行為像是緊密包裝在一起的諸個別磷光體粒子，所以在諸不同磷光體粒子之間的該介面處有諸小光學不連續。因此，諸陶瓷磷光體在光學上幾乎同質且具有與形成該陶瓷磷光體之該磷光體材料相同之折射係數。不像一保角磷光體層或一配置在一諸如一樹脂等透明材料內之磷光體層，一冷光陶瓷一般除了該磷光體本身之外不需要黏合材料(諸如一有機樹脂或環氧樹脂)，所以在該等各別磷光體粒子之間有非常少的空間或一不同折射係數的材料。
譬如一YAG：Ce陶瓷可如下文所述般形成：40g Y2O3(99.998%)、32g Al2O3(99.999%)、及3.44g CeO2於一滾筒座上在異丙醇內以1.5kg高純度氧化鋁球(2mm直徑)研磨12小時。然後將乾燥的先驅體粉末在CO環境中在1300℃下鍛燒2小時。接著將所獲得之該YAG粉末以一行星式球磨機(瑪瑙球)在乙醇內打散。然後該陶瓷漿液 被滑動澆鑄以在乾燥之後獲得一陶瓷綠體。該等綠體接著在石墨板之間以1700℃燒結二小時。
可形成諸陶瓷磷光體之磷光體範例包括鋁石榴石磷光體，其一般結構式為(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12：CeaPrb，其中0<x<1、0<y<1、0<z≦0.1、0<a≦0.2且0<b≦0.1，諸如在黃綠範圍內發光之Lu3Al5O12：Ce3+及Y3Al5O12：Ce3+；及(Sr1-x-yBaxCay)2-zSi5-aAl8-aOa：Euz 2+，其中0≦a<5、0<x≦1、0≦y≦1且0<z≦1，諸如在紅範圍內發光之Sr2Si5N8：Eu2+。適當的Y3Al5O12：Ce3+陶瓷板可從美國北卡羅來納州加洛特之拜考斯基國際公司(Baikowski International Corporation of Charlotte,NC)買到。其他的綠、黃及紅發光磷光體也很適當，包括(Sr1-a-bCabBac)SixNyOz：Eua 2+(a=0.002-0.2、b=0.0-0.25、c=0.0-0.25、x=1.5-2.5、y=1.5-2.5、z=1.5-2.5)譬如包括SrSi2N2O2：Eu2+；(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4：Eu2+譬如包括SrGa2S4：Eu2+，Sr1-xBaxSiO4：Eu2+；及(Ca1-xSrx)S：Eu2+其中0<x≦1譬如包括CaS：Eu2+與SrS：Eu2+。
該陶瓷磷光體由一在該晶核結構58與該陶瓷磷光體之間的該介面處之黏膠56或則直接藉晶圓黏合或透過一中間黏合層(未顯示在圖5與6中)黏合至一晶核結構58。若使用一黏合層，則該黏合層被選擇以具有該黏合層施加於其上之該III-族氮化物層的折射係數與該陶瓷磷光體的折射係數之間的一折射係數。上述許多高折射係數耦合材料可做成適當的諸黏合層。
在圖5中所示的該實施例中，p接觸器20為反射型，或者也可鄰接於接觸器20配置一額外的反射器，以使所有發射的光線都被導引朝向該陶瓷磷光體。一譬如為一分布布拉格反射器之光學反射器54可配置在該陶瓷磷光體相反於該等III-族氮化物層的該表面上，以控制從該主動區域未受該陶瓷磷光體覆蓋的區域逸出之發射量。譬如在該主 動區域發射紫外光的諸裝置中，反射器54可完全濾除未受覆蓋的發射。在該主動區域發射藍光的諸裝置中，反射器54可衰減逸出該陶瓷磷光體未受覆蓋的藍光量，以達成一期望的發射光譜。在某些實施例中，可省略反射器54且陶瓷磷光體52相反於該等裝置層的該表面可加以粗糙化、紋理化、或整型以改善光線吸收。此外，該陶瓷磷光體之該半透明度-亦即其產生之該散射量-可如上文所述般受控制從高不透明到高透明。
圖5中所示該實施例可黏合至如圖13中所示的一封裝元件。此一裝置更詳細地描述於2004年10月28日申請之名為"Package-Integrated Thin Film LED"的專利申請案編號10/977,294中，且在此納入供卓參。在圖13中所示該裝置內，包括一發光區域之半導體結構130如下文所述般藉被黏合介面56黏合至陶瓷磷光體52。諸接觸器18與20形成在半導體結構130上，該等接觸器藉諸金屬介面134連接至封裝元件132。封裝元件132一般具有一側向延伸部分，該延伸部分超過半導體結構130之側向延伸部分。在某些實施例中，配置在封裝元件132與陶瓷磷光體52之間的所有諸層具有一小於100微米之厚度。雖然圖13顯示半導體結構130以一覆晶組態安裝在封裝元件132上，其中諸接觸器18與20二者均形成在該半導體結構之該相同側上，但在一替代性實施例中，陶瓷磷光體52的一部分可加以移除以使接觸器18形成在半導體結構130與接觸器20相反的該側上。
在圖6中顯示之該實施例中，p接觸器60及/或n接觸器61至少部分透明且一反射器62形成在或附接至陶瓷磷光體52的該背面，以使所有所有發射的光線都透過諸接觸器60與61被導引出該裝置。
在某些實施例中，該陶瓷磷光體包括諸部份，該等部分具有非磷光體的諸惰性粒子或具有無活化摻雜物之諸磷光體結晶，以使那些部分不吸收且發射光線。譬如，SiNx可包含於陶瓷磷光體52內當作諸 惰性粒子。該陶瓷磷光體內之該活化摻雜物也可漸次變化，譬如以使該陶瓷最接近該裝置表面之該部分內的該磷光體有最高的摻雜物濃度。隨著距該裝置表面的距離增加，該磷光體內之該摻雜物濃度減少。該摻雜物濃度變化輪廓可採用任何形狀，譬如包括一線形、階段漸次變化或一冪規律輪廓，且可包括多數個或沒有恆定摻雜物濃度之區域。在某些實施例中，該陶瓷層距該裝置表面最遠之該部分會不包含任何磷光體或任何摻雜物。該陶瓷磷光體厚度與活化摻雜物之載入可加以調適以產生一所需之發射光譜。在某些實施例中，該陶瓷磷光體包括多重磷光體，每種磷光體發射相同的或不同的波長之光線。該等多重磷光體可加以混合並形成一單一均質的陶瓷磷光體，或者該等多重磷光體也可形成諸分離的層，該等層在該陶瓷磷光體內構成一磷光體層堆疊。類似地，該相同磷光體材料的多重陶瓷層可黏合在一起以形成一多層陶瓷堆疊。一包括一陶瓷磷光體的裝置也可與傳統諸磷光體層一起使用，像是諸保角磷光體層或配置在樹脂內之諸磷光體。
圖5中所示該裝置可藉使用陶瓷磷光體52當做一成長基板而加以製造，如圖7、8與9中所示般。在圖7中，一單晶晶核層58成長在一成長基板16上。在圖7之一較佳實施例中，晶核層58是氮化鎵(GaN)且成長基板是藍寶石。晶核層58之該表面與陶瓷磷光體52之該表面黏合在一起。一可選擇使用的黏合層可配置在該二黏合表面之間。該黏合層較佳地具有高透明度。在一較佳實施例中，該黏合層具有一高折射係數，譬如介於陶瓷磷光體52的該折射係數與晶核層58的該折射係數之間。一適當高折射率材料的一範例是二氧化鈦。若該黏合層甚薄，則可使用透明、低折射係數材料當做該黏合層。譬如，二氧化矽可在一小於譬如100埃的厚度下被使用當做一黏合層。若該黏合層極端薄，則可使用諸吸收材料當做一黏合層。譬如，矽可在一小於譬如數個單分子層的厚度下被使用當做一黏合層。
該等表面一般在提高的溫度與壓力下加以黏合。黏合的一適合溫度可譬如介於500與1000℃之間；黏合的一適合壓力可譬如介於5與1000psi之間。該等表面可在上述溫度與壓力下在一譬如氮氣的環境下壓在一起某一段時間-譬如至少一小時。在這些條件下，可在該二表面之間形成一強韌的黏合。此一黏合可耐得住該黏合製程之後的進一步半導體製程-像是成長額外的諸半導體層-所需之該等溫度。在黏合之後，成長基板16可藉一適合該基板的方法-諸如上文所述對一藍寶石基板使用雷射融解、蝕刻、或研磨-加以移除。
替代的方法如圖8中所示，一單晶晶核層58可形成為一形成在一成長基板16上方之層74的一部分。在圖8中，晶核層58可譬如為SiC、Al2O3或AlN。成長基板16可為任何適當的基板。一諸如氫的植入物如圖8中在72處所示般植入層74內。然後晶核層58之該表面與陶瓷磷光體52之該表面如上文對圖7的描述般黏合在一起。在黏合之後，成長基板16與該剩餘層74被移除，其方法是加熱該結構直到該植入物72分離為止、將該成長基板從晶核層58及陶瓷磷光體52脫離。
在圖7與8二圖中，一可耐得住諸額外半導體層之成長的黏膠形成在陶瓷磷光體52與晶核層58之間。如圖9中所示，包括n型區域10、主動區域14、及p型區域12的該等裝置層接著成長在晶核層58上方。在一完成的裝置內，為了使從晶核層58的諸側面逸出的光量最小化，會希望使晶核層58盡可能地薄，譬如薄於100微米，較佳地薄於10微米，更佳地薄於一微米。在成長該等III-族氮化物裝置層之前，晶核層58可選擇性地加以減薄。
在圖7之一較佳實施例中，基板16為藍寶石且晶核層58為氮化鎵或氮化鋁。諸纖鋅礦III-族氮化物層具有一鎵結晶面與一氮結晶面。當氮化鎵或氮化鋁以傳統方式成長在藍寶石上時，該結晶層的該頂部表面一般為該鎵結晶面。因此，當晶核層58黏合至陶瓷磷光體52且成 長基板16被移除時，晶核層58之該暴露表面為該氮結晶層。包括n型區域10、主動區域14、及p型區域12之該等裝置層可以與晶核層58相同之氮結晶面方向成長在晶核層58之該氮結晶面上。諸氮結晶面薄膜可譬如藉分子束磊晶法或有機金屬化學氣相沉積法成長，且更詳細地描述於Journal of Crystal Growth 204(1999年)419-428頁的"Morpohological and structure characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition(MOCVD)"及Phys.Stat.Sol.(b)228,No.2,505-512頁(2001年)"Playing with Polarity"中，該二文獻均在此納入供卓參。替代性地，一將結晶成長方向重新朝向該鎵結晶面的結構-諸如一低溫半導體層-可在該等裝置層之前成長，以使該等裝置層可以傳統方式成長在該鎵結晶面上。在某些實施例中，晶核層58可以該氮結晶面在該表面上的方式成長，以使在黏合至陶瓷磷光體52且移除成長基板16之後，該暴露表面是該鎵結晶面。在該等裝置層成長之後，該裝置可藉傳統方法-譬如藉蝕刻以暴露n型區域10的諸部分然後在n型區域10和p型區域12上形成諸接觸器-處理成圖5與6中所示諸裝置中的一種。該陶瓷磷光體可包括一載體，該載體可在將該晶圓切小塊之前藉諸如蝕刻或研磨等傳統製程加以移除或減薄。
替代性地，圖5及6中所示諸裝置可藉在一成長基板上成長該等裝置層，然後將該等裝置層黏合至該陶瓷磷光體當做一主基板而加以製造，如圖10與11中所示。在此一實施例中，該p型區域在該主動區域與該n型區域之前成長。因此，一n型或未摻雜區域76直接成長在一成長基板16上方。此區域可包括自由選擇的諸如諸緩衝層或晶核層等諸製備層、及自由選擇之被設計以促進該成長基板之剝離或該等磊晶層在基板移除之後的減薄之諸剝離層。然後成長p型區域12，跟著成長主動區域14和n型區域10。然後如圖10中所示及上文中參考圖7之描 述，將n型區域10之該表面透過黏膠56黏合至陶瓷磷光體52。雖然圖10顯示黏膠56形成在n型區域10的該表面處，但黏合至陶瓷磷光體52之該半導體結構的該表面可為p型、n型、或未摻雜者。黏膠56須為透明的。一黏合層可如上文所述般配置在該二被黏合表面之間促進黏合。一旦成長基板16如圖11中所示般被移除，該等磊晶層即被蝕刻以移除直接成長在該成長基板上方的該區域而暴露p型區域12。p型區域12之該表面可加以處理，譬如藉再成長p+材料78或藉在氨環境下退火以增加電洞密度並修補肇因於蝕刻的損壞，如專利申請案編號[律師事務所檔案標示編號LUM-04-10-02]之"Polarization-Reversed III-Nitride Light-emitting Device"中所詳述者，該文件在此納入供卓參。然後該晶圓可藉傳統方式處理成圖5與6之諸裝置中的一種；但是，此類裝置不包括圖5與6中所示的晶核層58，而是有黏膠56配置在陶瓷磷光體層52與n型區域10之間。
陶瓷磷光體-特別是圖5中光線從該裝置透過該陶瓷磷光體吸取的該裝置中-的一優點是有能力將該等陶瓷層做模塑、研磨、機械加工、主機衝壓或拋光成為所需的諸形狀，以譬如增加光線吸取。發冷光的諸陶瓷層一般具有高折射係數，譬如一Y3Al5O12：Ce3+陶瓷磷光體之折射係數為1.75到1.8。為了避免在該高折射率陶瓷磷光體與空氣間的該介面處之全反射，該陶瓷磷光體可被做成一諸如一半球透鏡或一菲涅爾透鏡等透鏡形狀。從該裝置吸取光線可進一步藉將該陶瓷磷光體的該頂部做隨機地或重複圖樣地粗糙化或紋理化而進一步地改善。而且，該陶瓷磷光體之範圍可加以選擇以提供相對於觀看角度之均勻顏色。譬如，在一或更多個磷光體與由該發光區域發射之未受轉換之藍光結合的一裝置內，若該陶瓷磷光體遠小於該主動區域，則當從該頂部觀看時，該白光看起來像被一藍圈環繞。若該陶瓷磷光體遠大於該主動區域，則該白光看起來像被一黃圈環繞。在該陶瓷磷光體被做 成一透鏡形狀的諸實施例中，若成形的陶瓷磷光體之一底部長度至少為該陶瓷磷光體安裝於其上之裝置的該面長度之兩倍，則可期望甚佳的光線吸取。在此類實施例中，該陶瓷體內之波長轉換磷光體的該位置可加以選擇以提供該光線的均勻混合。譬如，該波長轉換材料可限制在該陶瓷體最接近該裝置的該頂部半導體層之該部分內。在其他諸實施例中，波長轉換材料可配置在一第一陶瓷磷光體內，然後附接至一第二成形的透明陶瓷體。
圖12是如美國專利6,274,924中更詳細描述之一封裝好的發光裝置之一分解圖。一散熱金屬塊100放置入一插入模塑導線框架內。該插入模塑導線框架譬如是一在環繞一提供一電氣路徑之金屬框架106模塑之填充塑膠材料105。金屬塊100可包括一自由選用之反射器杯狀物102。可為上列諸實施例中所述的任一種裝置之該發光裝置晶粒104直接安裝或經由一熱導通次黏著基台103間接安裝至金屬塊100。可加上一蓋子108，其可為一自由選用之透鏡。
本發明之諸實施例可提供數個優點。首先，從該主動區域發射之光線具有被該磷光體吸收之一高可能性而有非常小的損失。當該光線被該磷光體再發射時，其必須脫離該磷光體區域，但該磷光體區域內之該環境幾乎在光學上無損失。該磷光體區域透過由該磷光體散射及再吸收和再發射提供許多隨機化的可能情況，該等可能情況是光線脫離該磷光體區域進入周遭環境所需者。所以，上文所述之該等實施例可提供較以前技術之諸裝置為佳的光線吸取。其次，上文所述之某些實施例免除圖1中所示以前技術之諸裝置內使用的該等有機黏膠，且因此消除那些有機黏膠-譬如在高溫操作期間-之該劣化造成的諸問題。
具有諸如對由該主要發光層發射之光線有高吸收性及高量子效率之上述磷光體期望特性之任何發冷光材料都可在該等上述實施例中 使用以有效地產生光線。所以，本發明不侷限於磷光體。在由該發光區域發射之諸波長下具有一大虛數成分之折射係數k且在該轉換波長下具有可忽略之k的波長轉換材料-像是譬如某些III-V族和II-VI族半導體-可在本發明的某些實施例中使用以取代磷光體。明確地說，在諸適當材料內，在由該主要發光區域發射之諸波長下，k大於0.01，更佳地大於0.1，且更佳地大於1。在此類實施例中，特別是III-V族與II-VI族半導體實施例中，可能需要來自該主要發光區域之高能量密度(高達100W/cm2或更高)以補償該發冷光材料內的有效低轉換效率。此外，必須提供諸如紋理化、粗糙化、或塑造等方法用以從該發冷光材料吸取光線。
既已在上文中詳細描述本發明，熟習本技術領域者會知道利用本發明說明可對本發明做諸修改而不背離本文所述之本發明概念的該精神。譬如，雖然上述該等範例描述諸III-族氮化物半導體裝置，但也可使用其他材料系統之裝置。而且，雖然上述該等範例包括磷光體，但請注意也可使用其他發冷光材料，像是半導體奈米粒子、量子點或有機染料等。因此，本發明之該範疇不侷限於所示的與所述的該等特定實施例。
10‧‧‧第一導通型式的第一半導體層
14‧‧‧主動區域
18‧‧‧接觸器
32‧‧‧光學耦合媒體
34‧‧‧磷光體顆粒
36‧‧‧磊晶層
38‧‧‧主基板
50‧‧‧金屬層

Claims (27)

  1. 一種裝置，其包括：一發光結構，其包括發射第一光之一發光層；一第一發冷光(luminescent)材料，其包括一陶瓷磷光體(ceramic phosphor)，該陶瓷磷光體係配置於該發光層所發射之光之一路徑中；及一第二發冷光材料，其包括一發冷光半導體，該發冷光半導體係配置於該發光層所發射之光之一路徑中，其中該發冷光半導體經組態以吸收該第一光並發射一不同波長之光；其中該第一發冷光材料係配置於該第二發冷光材料與該發光結構之間。
  2. 如請求項1之裝置，其中該第一發冷光材料係黏合(bonded)至該發光結構。
  3. 如請求項2之裝置，其進一步包括一黏結材料(bonding material)，該黏結材料係配置於該第一發冷光材料與該發光結構之間。
  4. 如請求項3之裝置，其中該黏結材料包括下列各者中之一者：奈米粒子、玻璃、高折射率玻璃、金屬氧化物、氧化鋁、氧化鉛及氧化鎢。
  5. 如請求項1之裝置，其中該第二發冷光材料包括III-V族材料與II-VI族材料中之一者。
  6. 如請求項1之裝置，其中該第二發冷光材料包括奈米粒子與量子點(quantum dots)中之一者。
  7. 如請求項1之裝置，其中該發光層所發射之光、該陶瓷磷光體所發射之光及該發冷光半導體所發射之光顏色不同。
  8. 如請求項1之裝置，其中該發光結構係安裝於一主基板(host substrate)上，該主基板包括銅、銅合金、矽、氮化鋁及鑽石中之一者。
  9. 如請求項1之裝置，其進一步包括一反射器，該反射器係配置於該發光結構、該第一發冷光材料及該第二發冷光材料中之至少一者上。
  10. 如請求項9之裝置，其中該反射器包括一分布布拉格反射器(distributed Bragg reflector)。
  11. 如請求項1之裝置，其中該發光結構包括一非半導體基板。
  12. 一種裝置，其包括：一發光結構，其包括一發光層及一粗糙化或紋理化(textured)表面；一第一發冷光材料，其包括一陶瓷磷光體，該陶瓷磷光體係配置於該發光層所發射之光之一路徑中；及一第二發冷光材料，其係配置於該發光層所發射之光之一路徑中；其中該陶瓷磷光體係不含黏合材料(binder material)之緊密排列(packed)之個別磷光體粒子之一剛性團塊(rigid agglomerate)。
  13. 如請求項12之裝置，其中該表面係藉由化學機械拋光、乾蝕刻及光電化學蝕刻中之一者而粗糙化或紋理化。
  14. 如請求項12之裝置，其中該發光層包括III-族氮化物材料。
  15. 如請求項12之裝置，其中該陶瓷磷光體之至少一表面係經粗糙化、紋理化或整型(shaped)。
  16. 如請求項12之裝置，其中該第一發冷光材料包括下列各者中之一者：(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12：CeaPrb，其中0<x<1、0<y<1、0<z≦0.1、0<a≦0.2且0<b≦0.1；Lu3Al5O12：Ce3+； Y3Al5O12：Ce3+；(Sr1-x-yBaxCay)2-zSi5-aAl8-aOa：Euz 2+，其中0≦a<5、0<x≦1、0≦y≦1且0<z≦1；(Sr1-a-bCabBac)SixNyOz：Eua 2+(a=0.002-0.2、b=0.0-0.25、c=0.0-0.25、x=1.5-2.5、y=1.5-2.5、z=1.5-2.5)；SrSi2N2O2：Eu2+；(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4)：Eu2+；SrGa2S4：Eu2+；Sr1-xBaxSiO4：Eu2+；(Ca1-xSrx)S：Eu2+；CaS：Eu2+；及SrS：Eu2+。
  17. 一種結構，其包括：一陶瓷體；一晶核(nucleation)層，其係薄於一百微米；一被黏合介面(bonded interface)，其將該陶瓷體連接至該晶核層，該被黏合介面係配置於該陶瓷體與該晶核層之間；及一晶核結構，其係成長(grown)於該晶核層上；其中該晶核結構包含配置在一n型區域與一p型區域之間的一發光區域，該發光區域經組態以發射一第一峰值波長的光線，且該陶瓷體與該晶核層間之任何分隔小於一百微米。
  18. 如請求項17之結構，其中該陶瓷體包括一波長轉換材料，該波長轉換材料可吸收該第一峰值波長的光線並發射一第二峰值波長的光線。
  19. 如請求項17之結構，其中該晶核層從氮化鎵(GaN)、氮化鋁(AlN)、碳化矽(SiC)、與三氧化二鋁(Al2O3)之群組中選擇。
  20. 如請求項17之結構，其中該陶瓷體與該晶核層間之任何分隔小於十微米。
  21. 如請求項17之結構，其進一步包括一反射表面，該反射表面將來自該晶核結構之光反射至該陶瓷體。
  22. 一種結構，其包括：一封裝元件； 一陶瓷體；及一半導體結構，其配置在該陶瓷體與該封裝元件之間且與該陶瓷體與該封裝元件連接，該半導體結構包括：一晶核層，其連接至該陶瓷體，及一晶核結構，其係成長於該晶核層上並包含配置在一n型區域與一p型區域之間的一發光區域，該發光區域經組態以發射一第一峰值波長之光線；其中該封裝元件以小於一百微米之距離與該陶瓷體分隔，且該封裝元件具有一超過該半導體結構之一側向範圍的側向範圍。
  23. 如請求項22之結構，其中該陶瓷體包括一波長轉換材料，該波長轉換材料可吸收該第一峰值波長的光線並發射一第二峰值波長的光線。
  24. 如請求項22之結構，其進一步包括一反射表面，該反射表面將來自該半導體結構之光反射至該陶瓷體。
  25. 如請求項22之結構，其中該陶瓷體與該晶核層間之一距離係小於一百微米。
  26. 如請求項22之結構，其中該陶瓷體與該晶核層間之一距離係小於十微米。
  27. 如請求項22之結構，其中該晶核層從氮化鎵(GaN)、氮化鋁(AlN)、碳化矽(SiC)、與三氧化二鋁(Al2O3)之群組中選擇。
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