JP5373252B2 - 波長変換型半導体発光デバイス - Google Patents
波長変換型半導体発光デバイス Download PDFInfo
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- JP5373252B2 JP5373252B2 JP2006109168A JP2006109168A JP5373252B2 JP 5373252 B2 JP5373252 B2 JP 5373252B2 JP 2006109168 A JP2006109168 A JP 2006109168A JP 2006109168 A JP2006109168 A JP 2006109168A JP 5373252 B2 JP5373252 B2 JP 5373252B2
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- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Description
10:半導体層
12:半導体層
14:活性領域
16:透明上層(成長基板)
18、20、60、61:コンタクト
22、24:接続
26、28:基板コンタクト
30:蛍光体層
32:光学的結合媒体
34:蛍光体粒(蛍光体層)
36:エピタキシャル層
38:ホスト基板
50:金属層
52:セラミック蛍光体層
54、62:反射鏡
56:接合材
58:核生成層
72:水素注入部
76:準備層
78:再成長p+材料
100:放熱スラグ
102:反射キャップ
103:熱伝導性補助キャップ
104:発光デバイス・ダイ
105:充填プラスチック材料
106:リードフレーム
108:カバー
130:半導体構造体
132:パッケージ素子
134:金属インターフェース
Claims (14)
- 第一ピーク波長の光を吸収し第二ピーク波長の光を放射するように形成された蛍光体から構成されたセラミック体を準備するステップと、
前記セラミック体を核生成構造体の表面に接合するステップと、
前記核生成構造体上に、n型領域とp型領域との間に配置されて前記第一ピーク波長の光を放射するように形成された発光領域を有する半導体構造体を成長させるステップと、を含み、
前記核生成構造体は、前記成長ステップの前において、厚さが100ミクロンより小さいことを特徴とする方法。 - 前記接合ステップが、実質的に金属又は接着剤のない接合を形成するステップを含むことを特徴とする請求項1に記載の方法。
- 前記接合ステップが、前記セラミック体と前記核生成構造体とを500℃より高い温度及び5psiより高い圧力において互いに圧着するステップを含むことを特徴とする請求項1に記載の方法。
- 前記核生成構造体が、GaN,AlN,SiC,及びAl2O3の群から選択されることを特徴とする請求項1に記載の方法。
- 基板上に形成された核生成構造体を準備するステップと、
接合後に前記基板を除去するステップと、
をさらに含むことを特徴とする請求項1に記載の方法。 - 前記n型領域の一部を露出させるために、前記半導体構造体をエッチングするステップと、
前記n型領域及び前記p型領域のそれぞれの上に電極を形成するステップと、
をさらに含むことを特徴とする請求項1に記載の方法。 - 前記電極の少なくとも1つが反射性であることを特徴とする請求項6に記載の方法。
- 前記セラミック体をレンズに成型するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記セラミック体の表面をテクスチャ加工又は粗面化するステップをさらに含むことを特徴とする請求項1に記載の方法。
- 前記セラミック体が第二ピーク波長の光に対して透明であることを特徴とする請求項1に記載の方法。
- 前記セラミック体が第二ピーク波長の光に対して不透明であることを特徴とする請求項1に記載の方法。
- 前記核生成構造体は、前記成長ステップの前において、厚さが10ミクロンより小さいことを特徴とする請求項1に記載の方法。
- 前記核生成構造体は、前記成長ステップの前において、厚さが1ミクロンより小さいことを特徴とする請求項1に記載の方法。
- 前記核生成構造体と前記セラミック体との間に接合層を生成するステップをさらに含むことを特徴とする請求項1に記載の方法。
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US11/080,801 US7341878B2 (en) | 2005-03-14 | 2005-03-14 | Wavelength-converted semiconductor light emitting device |
US11/080,801 | 2005-03-14 |
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JP2010092884A Division JP5451502B2 (ja) | 2005-03-14 | 2010-04-14 | 波長変換型半導体発光デバイス |
JP2013139876A Division JP5744116B2 (ja) | 2005-03-14 | 2013-07-03 | 波長変換型半導体発光デバイス |
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JP2010092884A Active JP5451502B2 (ja) | 2005-03-14 | 2010-04-14 | 波長変換型半導体発光デバイス |
JP2013139876A Active JP5744116B2 (ja) | 2005-03-14 | 2013-07-03 | 波長変換型半導体発光デバイス |
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EP (1) | EP1861883B8 (ja) |
JP (3) | JP5373252B2 (ja) |
KR (2) | KR101370324B1 (ja) |
CN (1) | CN101176212B (ja) |
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US20100200886A1 (en) | 2010-08-12 |
TW200707797A (en) | 2007-02-16 |
US20080121919A1 (en) | 2008-05-29 |
CN101176212B (zh) | 2010-05-19 |
CN101176212A (zh) | 2008-05-07 |
JP2010157774A (ja) | 2010-07-15 |
KR101370324B1 (ko) | 2014-03-05 |
TW201547054A (zh) | 2015-12-16 |
JP5451502B2 (ja) | 2014-03-26 |
KR20070116099A (ko) | 2007-12-06 |
US7341878B2 (en) | 2008-03-11 |
US8445929B2 (en) | 2013-05-21 |
JP2006352085A (ja) | 2006-12-28 |
EP1861883A2 (en) | 2007-12-05 |
WO2006097868A2 (en) | 2006-09-21 |
EP1861883B8 (en) | 2018-08-15 |
KR20120107535A (ko) | 2012-10-02 |
WO2006097868A3 (en) | 2007-01-18 |
JP2013225692A (ja) | 2013-10-31 |
TWI513035B (zh) | 2015-12-11 |
TWI622186B (zh) | 2018-04-21 |
US20060202105A1 (en) | 2006-09-14 |
EP1861883B1 (en) | 2018-06-13 |
JP5744116B2 (ja) | 2015-07-01 |
TWI508320B (zh) | 2015-11-11 |
TW201312787A (zh) | 2013-03-16 |
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