JP2010157774A - 波長変換型半導体発光デバイス - Google Patents
波長変換型半導体発光デバイス Download PDFInfo
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- JP2010157774A JP2010157774A JP2010092884A JP2010092884A JP2010157774A JP 2010157774 A JP2010157774 A JP 2010157774A JP 2010092884 A JP2010092884 A JP 2010092884A JP 2010092884 A JP2010092884 A JP 2010092884A JP 2010157774 A JP2010157774 A JP 2010157774A
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- light emitting
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- ceramic
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/6268—Thermal treatment of powders or mixtures thereof other than sintering characterised by the applied pressure or type of atmosphere, e.g. in vacuum, hydrogen or a specific oxygen pressure
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/628—Coating the powders or the macroscopic reinforcing agents
- C04B35/62802—Powder coating materials
- C04B35/62805—Oxide ceramics
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- C—CHEMISTRY; METALLURGY
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Abstract
【解決手段】本発明の実施形態は、発光層を有する発光構造体を含む。蛍光体を有する第1の発光性材料が、発光層によって放射される光の光路に配置されている。また、半導体を有する第2の発光性材料が、発光層によって放射される光の光路に配置されている。第2の発光性材料は、発光層によって放射された光を吸収し、異なる波長の光を放射するように構成されている。ある実施形態では、第1及び第2の発光性材料の一方を、半導体構造体に結合することができる。
【選択図】図5
Description
以下に本発明の実施態様を記載する。
[態様1]セラミック体蛍光体が第一ピーク波長の光を吸収し第二ピーク波長の光を放射するように形成された蛍光体を含むセラミック体を準備するステップと、
前記セラミック体を核生成構造体に接合するステップと、
前記核生成構造体上に、n型領域とp型領域との間に配置されて前記第一ピーク波長の光を放射するように形成された発光領域を有する半導体構造体を成長させるステップと、を含み、
前記核生成構造体は、成長前における厚さが100ミクロンより小さいことを特徴とする方法。
[態様2]前記接合ステップが、実質的に金属又は接着剤のない接合を形成するステップを含むことを特徴とする態様1に記載の方法。
[態様3]前記接合ステップが、前記セラミック体と前記核生成構造体とを500℃より高い温度及び5psiより高い圧力において互いに圧着するステップを含むことを特徴とする態様1に記載の方法。
[態様4]前記核生成構造体が、GaN,AlN,SiC,及びAl2O3の群から選択されることを特徴とする態様1に記載の方法。
[態様5]基板上に形成された核生成構造体を準備するステップと、
接合後に前記基板を除去するステップと、
をさらに含むことを特徴とする態様1に記載の方法。
[態様6]前記n型領域及び前記p型領域の両方の一部を露出させるために、前記半導体構造体をエッチングするステップと、
前記n型領域及び前記p型領域のそれぞれの上にコンタクトを形成するステップと、
をさらに含むことを特徴とする態様1に記載の方法。
[態様7]前記コンタクトの少なくとも1つが反射性であることを特徴とする態様6に記載の方法。
[態様8]前記セラミック体をレンズに成型するステップをさらに含むことを特徴とする態様1に記載の方法。
[態様9]前記セラミック体の表面をテクスチャ加工又は粗面化するステップをさらに含むことを特徴とする態様1に記載の方法。
[態様10]前記セラミック体が透明であることを特徴とする態様1に記載の方法。
[態様11]前記セラミック体が不透明であることを特徴とする態様1に記載の方法。
[態様12]
前記核生成構造体は、成長前における厚さが10ミクロンより小さいことを特徴とする態様1に記載の方法。
[態様13]前記核生成構造体は、成長前における厚さが1ミクロンより小さいことを特徴とする態様1に記載の方法。
[態様14]
前記核生成構造体と前記セラミック構造体との間に接合層を生成するステップをさらに含むことを特徴とする態様1に記載の方法。
[態様15]第一ピーク波長の光を吸収し第二ピーク波長の光を放射するように形成された蛍光体を含むセラミック体を準備するステップと、
成長基板上に形成され、第一ピーク波長の光を放射するように形成された発光領域がn型領域とp型領域との間に配置された半導体構造体を準備するステップと、
前記セラミック体を前記半導体構造体の表面に接合するステップと、
接合後に成長基板を除去するステップと、
を含むことを特徴とする方法。
[態様16]前記n型領域を成長させる前に前記p型領域が前記成長基板上に成長させられることを特徴とする態様15に記載の方法。
[態様17]前記成長基板の除去後に前記半導体構造体をアニールするステップをさらに含むことを特徴とする態様16に記載の方法。
[態様18]前記セラミック体に接合される前記半導体構造体の表面がn−型領域の表面であることを特徴とする態様15に記載の方法。
[態様19]前記半導体構造体と前記セラミック体との間に接合層を生成するステップをさらに含むことを特徴とする態様15に記載の方法。
[態様20]n−型領域とp−型領域の間に挟まれた発光領域を有する複数の層を含む半導体構造体と、
前記複数の層の1つに直接接触する発光性材料と、
を備え、
前記発光領域によって放射される光の波長において、前記発光性材料の屈折率の虚数部kが0.01より大きいことを特徴とする発光デバイス。
[態様21]kが0.1より大きいことを特徴とする態様20に記載の発光デバイス。
[態様22]前記発光領域がIII−窒化物材料を含むことを特徴とする態様20に記載の発光デバイス。
[態様23]前記発光性材料が蛍光体を含むことを特徴とする態様20に記載の発光デバイス。
[態様24]前記発光性材料がセラミック蛍光体を含むことを特徴とする態様23に記載の発光デバイス。
[態様25]前記発光性材料が蛍光体粒を含むことを特徴とする態様23に記載の発光デバイス。
[態様26]前記蛍光体粒の上に配置され、1.7より大きな屈折率をもつ透明材料をさらに含むことを特徴とする態様25に記載の発光デバイス。
[態様27]前記透明材料がガラスを含むことを特徴とする態様26に記載の発光デバイス。
[態様28]前記ガラスがゾルーゲルガラスを含むことを特徴とする態様27に記載の発光デバイス。
[態様29]前記透明材料中に配置され、約2nmから約50nmまでの間の直径を有するナノ粒子をさらに含むことを特徴とする態様26に記載の発光デバイス。
[態様30]前記蛍光体粒に直接接触する複数の層の表面層が、テクスチャ加工されているか又は粗面化されていることを特徴とする態様25に記載の発光デバイス。
[態様31]前記半導体構造体が、前記半導体構造体の横方向の広がりを超えた広がりを有するパッケージ部品に接合されていることと、
前記パッケージ部品が前記発光性材料から100ミクロンより小さな距離だけ隔てられていることと、
を特徴とする態様20に記載の発光デバイス。
[態様32]セラミック体と、
百ミクロンより薄い核生成構造体と、
前記セラミック体と前記核生成層の間に配置され、前記セラミック体を前記核生成構造に接続する接合インターフェースと、
を含む構造体であって、
前記核生成構造体が、前記核生成構造体上にエピタキシャル構造体が成長させられる ように形成されており、
前記セラミック体と前記核生成構造体の間のいかなる距離も100ミクロンより小さいこと、
を特徴とする構造体。
[態様33]前記核生成構造体上に成長させられた半導体構造体をさらに含み、該半導体構造体がn−型領域とp−型領域の間に配置された発光領域を含み、前記発光領域が第一ピーク波長の光を放射するように形成されており、前記核生成構造体が前記半導体構造体と前記セラミック体との間に配置されたことを特徴とする態様32に記載の構造体。
[態様34]
前記セラミック体が、第一ピーク波長の光を吸収し、第二ピーク波長の光を放射するように形成された蛍光体を含むことを特徴とする態様33に記載の構造体。
[態様35]前記核生成構造体が、GaN,AlN,SiC,及びAl2O3の群から選択されることを特徴とする態様33に記載の構造体。
[態様36]パッケージ部品と、
セラミック体と、
前記セラミック体と前記パッケージ部品の間に配置され、それらに接続された半導体構造体と、
を含み、前記半導体構造体がn−型領域とp−型領域の間に配置され、前記発光領域が第一ピーク波長の光を放射するように形成された発光領域を有する構造体であって、
前記パッケージ部品がセラミック体から100ミクロンより小さな距離だけ離れ、前記パッケージ部品が、半導体構造体の横方向の広がりを超えた横方向の広がりを有する、
ことを特徴とする構造体。
[態様37]前記セラミック体が、第一ピーク波長の光を吸収し、第二ピーク波長の光を放射するように形成された蛍光体を含むことを特徴とする態様36に記載の構造体。
10:半導体層
12:半導体層
14:活性領域
16:透明上層(成長基板)
18、20、60、61:コンタクト
22、24:接続
26、28:基板コンタクト
30:蛍光体層
32:光学的結合媒体
34:蛍光体粒(蛍光体層)
36:エピタキシャル層
38:ホスト基板
50:金属層
52:セラミック蛍光体層
54、62:反射鏡
56:接合材
58:核生成層
72:水素注入部
76:準備層
78:再成長p+材料
100:放熱スラグ
102:反射キャップ
103:熱伝導性補助キャップ
104:発光デバイス・ダイ
105:充填プラスチック材料
106:リードフレーム
108:カバー
130:半導体構造体
132:パッケージ素子
134:金属インターフェース
Claims (20)
- 発光層を有する発光構造体と、
前記発光層によって放射される光の光路に配置された蛍光体を有する第1の発光性材料と、
前記発光層によって放射される光の光路に配置された半導体を有する第2の発光性材料と、を備え、前記半導体が、第1波長の光を吸収し、第2波長の光を放射するように構成されている、デバイス。 - 前記第1及び第2の発光性材料の1つは、前記発光構造体に結合されている、請求項1に記載のデバイス。
- 前記第1及び第2の発光性材料の1つと前記発光構造体の間に配置された結合材料をさらに有する、請求項2に記載のデバイス。
- 前記結合材料は、ナノ粒子、ガラス、高屈折率ガラス、金属酸化物、金属フッ化物、酸化アルミニウム、酸化鉛、及び酸化タングステンのうちの1つを含む、請求項3に記載のデバイス。
- 前記第2の発光性材料は、III−V族材料、及びII−VI族材料のうちの1つを含む、請求項1に記載のデバイス。
- 前記第2の発光性材料は、ナノ粒子、及び量子ドットのうちの1つを含む、請求項1に記載のデバイス。
- 前記発光層によって放射された光、前記蛍光体によって放射された光、及び前記半導体によって放射された光は、異なる色を有する、請求項1に記載のデバイス。
- 前記第1の発光性材料、及び前記第2の発光性材料のうちの1つは、スプレー・コーティング法、及びスクリーン・プリンティング法のうちの1つによって配置された、請求項1に記載のデバイス。
- 前記発光構造体は、ホスト基板上に設けられており、前記ホスト基板は、銅、銅合金、シリコン、窒化アルミニウム、及びダイアモンドのうちの1つを含む、請求項1に記載のデバイス。
- 前記発光構造体、前記第1の発光性材料、及び前記第2の発光性材料のうちの少なくとも1つに設けられた反射鏡をさらに有する、請求項1に記載のデバイス。
- 前記反射鏡は、分散型ブラッグ反射鏡からなる、請求項10に記載のデバイス。
- 前記発光構造体は、非半導体基板を含む、請求項1に記載のデバイス。
- 発光層と粗面化又はテクスチャ加工された面とを有する発光構造体と、
前記発光層によって放射される光の光路に配置された蛍光体を有する第1の発光性材料と、
前記発光層によって放射される光の光路に配置された第2の発光性材料と、を備えたデバイス。 - 前記面は、化学的機械研磨法、ドライエッチング法、及び光電気化学エッチング法のうちの1つによって粗面化又はテクスチャ加工されている、請求項13に記載のデバイス。
- 前記発光層は、III−窒化物材料を含む、請求項13に記載のデバイス。
- 前記第1の発光性材料は、セラミック蛍光体を含む、請求項13に記載のデバイス。
- 前記セラミック蛍光体の少なくとも1つの面が、粗面化、テクスチャ加工、又は形状加工されている、請求項16に記載のデバイス。
- 前記第1の発光性材料は、(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb(但し、0<x<1,0<y<1,0<z≦0.1,0<a≦0.2,及び0<b≦0.1)、Lu3Al5O12:Ce3+、Y3Al5O12:Ce3+、(Sr1-x-yBaxCay)2-zSi5-aAlaN8-aOa:Euz 2+(但し、0≦a<5,0<x≦1,0≦y≦1,及び0<z≦1)、Sr2Si5N8:Eu2+、(Sr1-a-bCabBac)SixNyOz:Eua 2+(a=0.002−0.2,b=0.0−0.25、c=0.0−0.25、x=1.5−2.5,y=1.5−2.5,z=1.5−2.5)、SrSi2N2O2:Eu2+、(Sr1-u-v-xMguCavBax)(Ga2-y-zAlyInzS4):Eu2+、SrGa2S4:Eu2+、Sr1-xBaxSiO4:Eu2+、(Ca1-xSrx)S:Eu2+、CaS:Eu2+、及びSrS:Eu2+のうちの1つを含む、請求項13に記載のデバイス。
- セラミック蛍光体と、
前記セラミック蛍光体に取り付けられた波長変換半導体層と、を備えた構造体であって、前記波長変換半導体層は、第1波長の光子を吸収し、これに応答して、第2波長の光子を放射する、構造体。 - 発光層と粗面化又はテクスチャ加工された面とを有する発光構造体と、
前記発光層によって放射される光の光路に配置された半導体層と、を備えたデバイスであって、
前記半導体層は、前記発光層によって放射される光を吸収し、異なる波長の光を放射するように構成されている、デバイス。
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US7341878B2 (en) | 2008-03-11 |
JP5744116B2 (ja) | 2015-07-01 |
TW200707797A (en) | 2007-02-16 |
KR20120107535A (ko) | 2012-10-02 |
US8445929B2 (en) | 2013-05-21 |
EP1861883A2 (en) | 2007-12-05 |
JP2013225692A (ja) | 2013-10-31 |
US20080121919A1 (en) | 2008-05-29 |
TWI513035B (zh) | 2015-12-11 |
KR101370324B1 (ko) | 2014-03-05 |
JP2006352085A (ja) | 2006-12-28 |
KR20070116099A (ko) | 2007-12-06 |
WO2006097868A2 (en) | 2006-09-21 |
EP1861883B1 (en) | 2018-06-13 |
EP1861883B8 (en) | 2018-08-15 |
CN101176212A (zh) | 2008-05-07 |
WO2006097868A3 (en) | 2007-01-18 |
TWI508320B (zh) | 2015-11-11 |
JP5373252B2 (ja) | 2013-12-18 |
TW201547054A (zh) | 2015-12-16 |
JP5451502B2 (ja) | 2014-03-26 |
CN101176212B (zh) | 2010-05-19 |
TWI622186B (zh) | 2018-04-21 |
US20060202105A1 (en) | 2006-09-14 |
US20100200886A1 (en) | 2010-08-12 |
TW201312787A (zh) | 2013-03-16 |
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