DE602005016256D1 - Belichtungssystem mit einem geladenen teilchenstrahl - Google Patents

Belichtungssystem mit einem geladenen teilchenstrahl

Info

Publication number
DE602005016256D1
DE602005016256D1 DE602005016256T DE602005016256T DE602005016256D1 DE 602005016256 D1 DE602005016256 D1 DE 602005016256D1 DE 602005016256 T DE602005016256 T DE 602005016256T DE 602005016256 T DE602005016256 T DE 602005016256T DE 602005016256 D1 DE602005016256 D1 DE 602005016256D1
Authority
DE
Germany
Prior art keywords
group
particle beam
apertures
deflectors
aligned
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005016256T
Other languages
English (en)
Inventor
Pieter Kruit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of DE602005016256D1 publication Critical patent/DE602005016256D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472Deflecting along given lines
    • H01J37/1474Scanning means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177Multi-beam, e.g. fly's eye, comb probe
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06308Thermionic sources
    • H01J2237/06316Schottky emission
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3175Lithography
DE602005016256T 2004-05-17 2005-04-29 Belichtungssystem mit einem geladenen teilchenstrahl Active DE602005016256D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US57228704P 2004-05-17 2004-05-17
PCT/NL2005/000329 WO2005112073A1 (en) 2004-05-17 2005-04-29 Charged particle beam exposure system

Publications (1)

Publication Number Publication Date
DE602005016256D1 true DE602005016256D1 (de) 2009-10-08

Family

ID=34967361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005016256T Active DE602005016256D1 (de) 2004-05-17 2005-04-29 Belichtungssystem mit einem geladenen teilchenstrahl

Country Status (8)

Country Link
US (2) US7453075B2 (de)
EP (1) EP1766653B1 (de)
JP (1) JP4856073B2 (de)
KR (1) KR101099487B1 (de)
CN (2) CN101019203B (de)
AT (1) ATE441202T1 (de)
DE (1) DE602005016256D1 (de)
WO (1) WO2005112073A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101019203B (zh) * 2004-05-17 2010-12-22 迈普尔平版印刷Ip有限公司 带电粒子束曝光系统
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
KR101647768B1 (ko) * 2008-06-04 2016-08-11 마퍼 리쏘그라피 아이피 비.브이. 타겟을 노출하는 방법 및 시스템
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
JP5166551B2 (ja) * 2008-12-16 2013-03-21 株式会社日立ハイテクノロジーズ 電子線装置およびそれを用いた電子線応用装置、並びに電子源加工方法
KR101605832B1 (ko) * 2009-05-20 2016-03-23 마퍼 리쏘그라피 아이피 비.브이. 리소그래픽 처리를 위한 2―레벨 패턴 발생 방법 및 이를 이용한 패턴 발생기
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
JP5988570B2 (ja) * 2010-12-31 2016-09-07 エフ・イ−・アイ・カンパニー 選択可能な複数の粒子放出器を備える荷電粒子源
NL2006868C2 (en) * 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
WO2014156170A1 (ja) * 2013-03-29 2014-10-02 国立大学法人東北大学 電子ビーム照射装置
TWI641017B (zh) * 2013-11-14 2018-11-11 Asml Netherlands B.V. 準直器電極堆疊及帶電粒子微影系統
JP6804304B2 (ja) * 2014-02-10 2020-12-23 ルクスブライト・アーベー X線管用の電子エミッタ及びx線デバイス
US10056228B2 (en) * 2014-07-29 2018-08-21 Applied Materials Israel Ltd. Charged particle beam specimen inspection system and method for operation thereof
NL2013411B1 (en) * 2014-09-04 2016-09-27 Univ Delft Tech Multi electron beam inspection apparatus.
TWI742223B (zh) * 2017-01-14 2021-10-11 美商克萊譚克公司 電子束系統及方法,以及掃描電子顯微鏡
US10242839B2 (en) * 2017-05-05 2019-03-26 Kla-Tencor Corporation Reduced Coulomb interactions in a multi-beam column
NL2024065B1 (en) * 2019-10-21 2021-06-22 Univ Delft Tech Multi-beam charged particle source with alignment means
US11309163B2 (en) * 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
EP3869536A1 (de) * 2020-02-21 2021-08-25 ASML Netherlands B.V. Inspektionsvorrichtung
JP2023514498A (ja) * 2020-02-21 2023-04-06 エーエスエムエル ネザーランズ ビー.ブイ. 検査装置
EP3937205A1 (de) * 2020-07-06 2022-01-12 ASML Netherlands B.V. Ladungsteilchenmehrstrahlsäule, ladungsteilchenmehrstrahlsäulenanordnung, inspektionsverfahren
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116754B1 (de) * 1970-03-04 1976-05-27
US3952228A (en) * 1974-11-18 1976-04-20 Ion Tech, Inc. Electron-bombardment ion source including alternating potential means for cyclically varying the focussing of ion beamlets
JPS6039828A (ja) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 荷電ビ−ム露光装置
US4684848A (en) * 1983-09-26 1987-08-04 Kaufman & Robinson, Inc. Broad-beam electron source
US4996441A (en) * 1988-09-16 1991-02-26 Siemens Aktiengesellschaft Lithographic apparatus for structuring a subject
US5012105A (en) * 1989-02-02 1991-04-30 Nippon Seiko Kabushiki Kaisha Multiple-imaging charged particle-beam exposure system
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
JP3547531B2 (ja) * 1994-08-03 2004-07-28 株式会社日立製作所 電子線装置
US5616926A (en) * 1994-08-03 1997-04-01 Hitachi, Ltd. Schottky emission cathode and a method of stabilizing the same
JPH11224629A (ja) * 1998-02-09 1999-08-17 Hitachi Ltd 拡散補給型電子源、その製造方法および電子線装置
US6014200A (en) * 1998-02-24 2000-01-11 Nikon Corporation High throughput electron beam lithography system
US6157039A (en) * 1998-05-07 2000-12-05 Etec Systems, Inc. Charged particle beam illumination of blanking aperture array
JPH11329322A (ja) * 1998-05-11 1999-11-30 Advantest Corp 電子ビーム露光方法及び電子ビーム露光装置
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
JP2001052998A (ja) * 1999-06-03 2001-02-23 Advantest Corp 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置
US6825480B1 (en) * 1999-06-23 2004-11-30 Hitachi, Ltd. Charged particle beam apparatus and automatic astigmatism adjustment method
AU1926501A (en) * 1999-11-23 2001-06-04 Ion Diagnostics, Inc. Electron optics for multi-beam electron beam lithography tool
DE60034559T2 (de) 1999-12-23 2008-01-03 Fei Co., Hillsboro Vielstrahl-elektronenstrahl-lithographievorrichtung mit unterschiedlichen strahlblenden
EP1171901B1 (de) * 2000-02-09 2008-10-08 Fei Company Mehrfachsäulen für fokussierte ionenstrahlen (fib) zur anwendung in der herstellung von nanostrukturen
US6734428B2 (en) * 2000-02-19 2004-05-11 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
US6977375B2 (en) * 2000-02-19 2005-12-20 Multibeam Systems, Inc. Multi-beam multi-column electron beam inspection system
JP2001267221A (ja) * 2000-03-17 2001-09-28 Canon Inc 荷電粒子線露光装置及びデバイス製造方法
US6566664B2 (en) * 2000-03-17 2003-05-20 Canon Kabushiki Kaisha Charged-particle beam exposure apparatus and device manufacturing method
JP4585661B2 (ja) * 2000-03-31 2010-11-24 キヤノン株式会社 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法
WO2001075950A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille electronique multiaxe, procede de fabrication de ladite lentille, et procede de fabrication d'un dispositif a semi-conducteur
JP4451042B2 (ja) * 2000-04-04 2010-04-14 株式会社アドバンテスト 多軸電子レンズを用いたマルチビーム露光装置、半導体素子製造方法
WO2001075947A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille elctronique multi-axiale, une lentille electronique multi-axiale pour la focalisation de faisceaux d'electrons, et procede de fabrication de dispositif semi-conducteur
WO2001075949A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille electronique multiaxe, et procede de fabrication d'un dispositif a semi-conducteur
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
US6787780B2 (en) * 2000-04-04 2004-09-07 Advantest Corporation Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device
JP4451041B2 (ja) * 2000-04-04 2010-04-14 株式会社アドバンテスト 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法
US20030178583A1 (en) * 2000-09-18 2003-09-25 Kampherbeek Bert Jan Field emission photo-cathode array for lithography system and lithography system provided with such an array
US6771013B2 (en) * 2000-10-17 2004-08-03 Fei Company Low power schottky emitter
EP1271606A1 (de) * 2000-11-02 2003-01-02 Ebara Corporation Elektronenstrahlgerät und verfahren zur herstellung von bauteilen mittels solchem gerät
JP4301724B2 (ja) * 2000-12-06 2009-07-22 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
JP2002334663A (ja) * 2001-03-09 2002-11-22 Vacuum Products Kk 荷電粒子発生装置及びその発生方法
JP4268348B2 (ja) * 2001-06-26 2009-05-27 株式会社日立製作所 ショットキー電子銃及び電子線装置
US6750455B2 (en) * 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US20030132382A1 (en) * 2001-12-18 2003-07-17 Sogard Michael R. System and method for inspecting a mask
US6614035B2 (en) * 2002-01-30 2003-09-02 International Business Machines Corporation Multi-beam shaped beam lithography system
US6710361B2 (en) * 2002-04-23 2004-03-23 International Business Machines Corporation Multi-beam hybrid solenoid lens electron beam system
JP2003324050A (ja) * 2002-04-26 2003-11-14 Advantest Corp 露光装置及びカソード製造方法
JP4156862B2 (ja) * 2002-05-10 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム処理装置
JP4143373B2 (ja) * 2002-10-09 2008-09-03 株式会社日立ハイテクノロジーズ 電子銃、電子ビーム描画装置、及び電子ビーム描画方法
EP2302458B1 (de) * 2002-10-25 2016-09-14 Mapper Lithography Ip B.V. Lithographisches System
WO2004040614A2 (en) * 2002-10-30 2004-05-13 Mapper Lithography Ip B.V. Electron beam exposure system
US7129502B2 (en) * 2003-03-10 2006-10-31 Mapper Lithography Ip B.V. Apparatus for generating a plurality of beamlets
JP4421836B2 (ja) * 2003-03-28 2010-02-24 キヤノン株式会社 露光装置及びデバイス製造方法
ATE524822T1 (de) * 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
JP4738723B2 (ja) * 2003-08-06 2011-08-03 キヤノン株式会社 マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法
CN101019203B (zh) * 2004-05-17 2010-12-22 迈普尔平版印刷Ip有限公司 带电粒子束曝光系统

Also Published As

Publication number Publication date
KR20070021262A (ko) 2007-02-22
JP4856073B2 (ja) 2012-01-18
CN101019203A (zh) 2007-08-15
US20090065711A1 (en) 2009-03-12
JP2007538398A (ja) 2007-12-27
EP1766653A1 (de) 2007-03-28
WO2005112073A1 (en) 2005-11-24
CN101019203B (zh) 2010-12-22
CN102005358A (zh) 2011-04-06
CN102005358B (zh) 2012-09-12
US7453075B2 (en) 2008-11-18
US20050269528A1 (en) 2005-12-08
ATE441202T1 (de) 2009-09-15
US7868307B2 (en) 2011-01-11
EP1766653B1 (de) 2009-08-26
KR101099487B1 (ko) 2011-12-28

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