DE602005016256D1 - Belichtungssystem mit einem geladenen teilchenstrahl - Google Patents
Belichtungssystem mit einem geladenen teilchenstrahlInfo
- Publication number
- DE602005016256D1 DE602005016256D1 DE602005016256T DE602005016256T DE602005016256D1 DE 602005016256 D1 DE602005016256 D1 DE 602005016256D1 DE 602005016256 T DE602005016256 T DE 602005016256T DE 602005016256 T DE602005016256 T DE 602005016256T DE 602005016256 D1 DE602005016256 D1 DE 602005016256D1
- Authority
- DE
- Germany
- Prior art keywords
- group
- particle beam
- apertures
- deflectors
- aligned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
- H01J37/1474—Scanning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06308—Thermionic sources
- H01J2237/06316—Schottky emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US57228704P | 2004-05-17 | 2004-05-17 | |
PCT/NL2005/000329 WO2005112073A1 (en) | 2004-05-17 | 2005-04-29 | Charged particle beam exposure system |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005016256D1 true DE602005016256D1 (de) | 2009-10-08 |
Family
ID=34967361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005016256T Active DE602005016256D1 (de) | 2004-05-17 | 2005-04-29 | Belichtungssystem mit einem geladenen teilchenstrahl |
Country Status (8)
Country | Link |
---|---|
US (2) | US7453075B2 (de) |
EP (1) | EP1766653B1 (de) |
JP (1) | JP4856073B2 (de) |
KR (1) | KR101099487B1 (de) |
CN (2) | CN101019203B (de) |
AT (1) | ATE441202T1 (de) |
DE (1) | DE602005016256D1 (de) |
WO (1) | WO2005112073A1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101019203B (zh) * | 2004-05-17 | 2010-12-22 | 迈普尔平版印刷Ip有限公司 | 带电粒子束曝光系统 |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
US8445869B2 (en) | 2008-04-15 | 2013-05-21 | Mapper Lithography Ip B.V. | Projection lens arrangement |
US8890094B2 (en) | 2008-02-26 | 2014-11-18 | Mapper Lithography Ip B.V. | Projection lens arrangement |
KR101647768B1 (ko) * | 2008-06-04 | 2016-08-11 | 마퍼 리쏘그라피 아이피 비.브이. | 타겟을 노출하는 방법 및 시스템 |
NL2003304C2 (en) * | 2008-08-07 | 2010-09-14 | Ims Nanofabrication Ag | Compensation of dose inhomogeneity and image distortion. |
JP5166551B2 (ja) * | 2008-12-16 | 2013-03-21 | 株式会社日立ハイテクノロジーズ | 電子線装置およびそれを用いた電子線応用装置、並びに電子源加工方法 |
KR101605832B1 (ko) * | 2009-05-20 | 2016-03-23 | 마퍼 리쏘그라피 아이피 비.브이. | 리소그래픽 처리를 위한 2―레벨 패턴 발생 방법 및 이를 이용한 패턴 발생기 |
US8294125B2 (en) * | 2009-11-18 | 2012-10-23 | Kla-Tencor Corporation | High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture |
JP5988570B2 (ja) * | 2010-12-31 | 2016-09-07 | エフ・イ−・アイ・カンパニー | 選択可能な複数の粒子放出器を備える荷電粒子源 |
NL2006868C2 (en) * | 2011-05-30 | 2012-12-03 | Mapper Lithography Ip Bv | Charged particle multi-beamlet apparatus. |
US10586625B2 (en) | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
WO2014156170A1 (ja) * | 2013-03-29 | 2014-10-02 | 国立大学法人東北大学 | 電子ビーム照射装置 |
TWI641017B (zh) * | 2013-11-14 | 2018-11-11 | Asml Netherlands B.V. | 準直器電極堆疊及帶電粒子微影系統 |
JP6804304B2 (ja) * | 2014-02-10 | 2020-12-23 | ルクスブライト・アーベー | X線管用の電子エミッタ及びx線デバイス |
US10056228B2 (en) * | 2014-07-29 | 2018-08-21 | Applied Materials Israel Ltd. | Charged particle beam specimen inspection system and method for operation thereof |
NL2013411B1 (en) * | 2014-09-04 | 2016-09-27 | Univ Delft Tech | Multi electron beam inspection apparatus. |
TWI742223B (zh) * | 2017-01-14 | 2021-10-11 | 美商克萊譚克公司 | 電子束系統及方法,以及掃描電子顯微鏡 |
US10242839B2 (en) * | 2017-05-05 | 2019-03-26 | Kla-Tencor Corporation | Reduced Coulomb interactions in a multi-beam column |
NL2024065B1 (en) * | 2019-10-21 | 2021-06-22 | Univ Delft Tech | Multi-beam charged particle source with alignment means |
US11309163B2 (en) * | 2019-11-07 | 2022-04-19 | Applied Materials, Inc. | Multibeamlet charged particle device and method |
EP3869536A1 (de) * | 2020-02-21 | 2021-08-25 | ASML Netherlands B.V. | Inspektionsvorrichtung |
JP2023514498A (ja) * | 2020-02-21 | 2023-04-06 | エーエスエムエル ネザーランズ ビー.ブイ. | 検査装置 |
EP3937205A1 (de) * | 2020-07-06 | 2022-01-12 | ASML Netherlands B.V. | Ladungsteilchenmehrstrahlsäule, ladungsteilchenmehrstrahlsäulenanordnung, inspektionsverfahren |
US11651934B2 (en) | 2021-09-30 | 2023-05-16 | Kla Corporation | Systems and methods of creating multiple electron beams |
Family Cites Families (51)
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JPS5116754B1 (de) * | 1970-03-04 | 1976-05-27 | ||
US3952228A (en) * | 1974-11-18 | 1976-04-20 | Ion Tech, Inc. | Electron-bombardment ion source including alternating potential means for cyclically varying the focussing of ion beamlets |
JPS6039828A (ja) * | 1983-08-12 | 1985-03-01 | Nippon Telegr & Teleph Corp <Ntt> | 荷電ビ−ム露光装置 |
US4684848A (en) * | 1983-09-26 | 1987-08-04 | Kaufman & Robinson, Inc. | Broad-beam electron source |
US4996441A (en) * | 1988-09-16 | 1991-02-26 | Siemens Aktiengesellschaft | Lithographic apparatus for structuring a subject |
US5012105A (en) * | 1989-02-02 | 1991-04-30 | Nippon Seiko Kabushiki Kaisha | Multiple-imaging charged particle-beam exposure system |
US5363021A (en) * | 1993-07-12 | 1994-11-08 | Cornell Research Foundation, Inc. | Massively parallel array cathode |
JP3547531B2 (ja) * | 1994-08-03 | 2004-07-28 | 株式会社日立製作所 | 電子線装置 |
US5616926A (en) * | 1994-08-03 | 1997-04-01 | Hitachi, Ltd. | Schottky emission cathode and a method of stabilizing the same |
JPH11224629A (ja) * | 1998-02-09 | 1999-08-17 | Hitachi Ltd | 拡散補給型電子源、その製造方法および電子線装置 |
US6014200A (en) * | 1998-02-24 | 2000-01-11 | Nikon Corporation | High throughput electron beam lithography system |
US6157039A (en) * | 1998-05-07 | 2000-12-05 | Etec Systems, Inc. | Charged particle beam illumination of blanking aperture array |
JPH11329322A (ja) * | 1998-05-11 | 1999-11-30 | Advantest Corp | 電子ビーム露光方法及び電子ビーム露光装置 |
JP2000252207A (ja) * | 1998-08-19 | 2000-09-14 | Ims Ionen Mikrofab Syst Gmbh | 粒子線マルチビームリソグラフイー |
JP2001052998A (ja) * | 1999-06-03 | 2001-02-23 | Advantest Corp | 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置 |
US6825480B1 (en) * | 1999-06-23 | 2004-11-30 | Hitachi, Ltd. | Charged particle beam apparatus and automatic astigmatism adjustment method |
AU1926501A (en) * | 1999-11-23 | 2001-06-04 | Ion Diagnostics, Inc. | Electron optics for multi-beam electron beam lithography tool |
DE60034559T2 (de) | 1999-12-23 | 2008-01-03 | Fei Co., Hillsboro | Vielstrahl-elektronenstrahl-lithographievorrichtung mit unterschiedlichen strahlblenden |
EP1171901B1 (de) * | 2000-02-09 | 2008-10-08 | Fei Company | Mehrfachsäulen für fokussierte ionenstrahlen (fib) zur anwendung in der herstellung von nanostrukturen |
US6734428B2 (en) * | 2000-02-19 | 2004-05-11 | Multibeam Systems, Inc. | Multi-beam multi-column electron beam inspection system |
US6977375B2 (en) * | 2000-02-19 | 2005-12-20 | Multibeam Systems, Inc. | Multi-beam multi-column electron beam inspection system |
JP2001267221A (ja) * | 2000-03-17 | 2001-09-28 | Canon Inc | 荷電粒子線露光装置及びデバイス製造方法 |
US6566664B2 (en) * | 2000-03-17 | 2003-05-20 | Canon Kabushiki Kaisha | Charged-particle beam exposure apparatus and device manufacturing method |
JP4585661B2 (ja) * | 2000-03-31 | 2010-11-24 | キヤノン株式会社 | 電子光学系アレイ、荷電粒子線露光装置およびデバイス製造方法 |
WO2001075950A1 (fr) * | 2000-04-04 | 2001-10-11 | Advantest Corporation | Appareil d'exposition multifaisceau comprenant une lentille electronique multiaxe, procede de fabrication de ladite lentille, et procede de fabrication d'un dispositif a semi-conducteur |
JP4451042B2 (ja) * | 2000-04-04 | 2010-04-14 | 株式会社アドバンテスト | 多軸電子レンズを用いたマルチビーム露光装置、半導体素子製造方法 |
WO2001075947A1 (fr) * | 2000-04-04 | 2001-10-11 | Advantest Corporation | Appareil d'exposition multifaisceau comprenant une lentille elctronique multi-axiale, une lentille electronique multi-axiale pour la focalisation de faisceaux d'electrons, et procede de fabrication de dispositif semi-conducteur |
WO2001075949A1 (fr) * | 2000-04-04 | 2001-10-11 | Advantest Corporation | Appareil d'exposition multifaisceau comprenant une lentille electronique multiaxe, et procede de fabrication d'un dispositif a semi-conducteur |
KR100465117B1 (ko) * | 2000-04-04 | 2005-01-05 | 주식회사 아도반테스토 | 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법 |
US6787780B2 (en) * | 2000-04-04 | 2004-09-07 | Advantest Corporation | Multi-beam exposure apparatus using a multi-axis electron lens, fabrication method of a semiconductor device |
JP4451041B2 (ja) * | 2000-04-04 | 2010-04-14 | 株式会社アドバンテスト | 多軸電子レンズを用いたマルチビーム露光装置、複数の電子ビームを集束する多軸電子レンズ、半導体素子製造方法 |
US20030178583A1 (en) * | 2000-09-18 | 2003-09-25 | Kampherbeek Bert Jan | Field emission photo-cathode array for lithography system and lithography system provided with such an array |
US6771013B2 (en) * | 2000-10-17 | 2004-08-03 | Fei Company | Low power schottky emitter |
EP1271606A1 (de) * | 2000-11-02 | 2003-01-02 | Ebara Corporation | Elektronenstrahlgerät und verfahren zur herstellung von bauteilen mittels solchem gerät |
JP4301724B2 (ja) * | 2000-12-06 | 2009-07-22 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子レンズ |
JP2002334663A (ja) * | 2001-03-09 | 2002-11-22 | Vacuum Products Kk | 荷電粒子発生装置及びその発生方法 |
JP4268348B2 (ja) * | 2001-06-26 | 2009-05-27 | 株式会社日立製作所 | ショットキー電子銃及び電子線装置 |
US6750455B2 (en) * | 2001-07-02 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for multiple charged particle beams |
US20030132382A1 (en) * | 2001-12-18 | 2003-07-17 | Sogard Michael R. | System and method for inspecting a mask |
US6614035B2 (en) * | 2002-01-30 | 2003-09-02 | International Business Machines Corporation | Multi-beam shaped beam lithography system |
US6710361B2 (en) * | 2002-04-23 | 2004-03-23 | International Business Machines Corporation | Multi-beam hybrid solenoid lens electron beam system |
JP2003324050A (ja) * | 2002-04-26 | 2003-11-14 | Advantest Corp | 露光装置及びカソード製造方法 |
JP4156862B2 (ja) * | 2002-05-10 | 2008-09-24 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子ビーム処理装置 |
JP4143373B2 (ja) * | 2002-10-09 | 2008-09-03 | 株式会社日立ハイテクノロジーズ | 電子銃、電子ビーム描画装置、及び電子ビーム描画方法 |
EP2302458B1 (de) * | 2002-10-25 | 2016-09-14 | Mapper Lithography Ip B.V. | Lithographisches System |
WO2004040614A2 (en) * | 2002-10-30 | 2004-05-13 | Mapper Lithography Ip B.V. | Electron beam exposure system |
US7129502B2 (en) * | 2003-03-10 | 2006-10-31 | Mapper Lithography Ip B.V. | Apparatus for generating a plurality of beamlets |
JP4421836B2 (ja) * | 2003-03-28 | 2010-02-24 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
ATE524822T1 (de) * | 2003-05-28 | 2011-09-15 | Mapper Lithography Ip Bv | Belichtungsverfahren für strahlen aus geladenen teilchen |
JP4738723B2 (ja) * | 2003-08-06 | 2011-08-03 | キヤノン株式会社 | マルチ荷電粒子線描画装置、荷電粒子線の電流の測定方法及びデバイス製造方法 |
CN101019203B (zh) * | 2004-05-17 | 2010-12-22 | 迈普尔平版印刷Ip有限公司 | 带电粒子束曝光系统 |
-
2005
- 2005-04-29 CN CN2005800212023A patent/CN101019203B/zh not_active Expired - Fee Related
- 2005-04-29 DE DE602005016256T patent/DE602005016256D1/de active Active
- 2005-04-29 AT AT05740699T patent/ATE441202T1/de active
- 2005-04-29 WO PCT/NL2005/000329 patent/WO2005112073A1/en active Application Filing
- 2005-04-29 KR KR1020067026436A patent/KR101099487B1/ko active IP Right Grant
- 2005-04-29 JP JP2007527070A patent/JP4856073B2/ja not_active Expired - Fee Related
- 2005-04-29 CN CN2010105208065A patent/CN102005358B/zh active Active
- 2005-04-29 US US11/118,162 patent/US7453075B2/en active Active
- 2005-04-29 EP EP05740699A patent/EP1766653B1/de active Active
-
2008
- 2008-10-24 US US12/288,877 patent/US7868307B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20070021262A (ko) | 2007-02-22 |
JP4856073B2 (ja) | 2012-01-18 |
CN101019203A (zh) | 2007-08-15 |
US20090065711A1 (en) | 2009-03-12 |
JP2007538398A (ja) | 2007-12-27 |
EP1766653A1 (de) | 2007-03-28 |
WO2005112073A1 (en) | 2005-11-24 |
CN101019203B (zh) | 2010-12-22 |
CN102005358A (zh) | 2011-04-06 |
CN102005358B (zh) | 2012-09-12 |
US7453075B2 (en) | 2008-11-18 |
US20050269528A1 (en) | 2005-12-08 |
ATE441202T1 (de) | 2009-09-15 |
US7868307B2 (en) | 2011-01-11 |
EP1766653B1 (de) | 2009-08-26 |
KR101099487B1 (ko) | 2011-12-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |