ATE521979T1 - Rasterabtaststrahlen geladener teilchen - Google Patents

Rasterabtaststrahlen geladener teilchen

Info

Publication number
ATE521979T1
ATE521979T1 AT08862809T AT08862809T ATE521979T1 AT E521979 T1 ATE521979 T1 AT E521979T1 AT 08862809 T AT08862809 T AT 08862809T AT 08862809 T AT08862809 T AT 08862809T AT E521979 T1 ATE521979 T1 AT E521979T1
Authority
AT
Austria
Prior art keywords
charged particles
raster scanning
scanning beams
sample
portions
Prior art date
Application number
AT08862809T
Other languages
English (en)
Inventor
Dirk Preikszas
Michael Steigerwald
Joerg Ackermann
Original Assignee
Zeiss Carl Nts Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Nts Gmbh filed Critical Zeiss Carl Nts Gmbh
Application granted granted Critical
Publication of ATE521979T1 publication Critical patent/ATE521979T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AT08862809T 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen ATE521979T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1422907P 2007-12-17 2007-12-17
PCT/EP2008/067419 WO2009077450A2 (de) 2007-12-17 2008-12-12 Scanning charged particle beams

Publications (1)

Publication Number Publication Date
ATE521979T1 true ATE521979T1 (de) 2011-09-15

Family

ID=40497572

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08862809T ATE521979T1 (de) 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen

Country Status (5)

Country Link
US (1) US8304750B2 (de)
EP (1) EP2238606B1 (de)
JP (1) JP5473004B2 (de)
AT (1) ATE521979T1 (de)
WO (1) WO2009077450A2 (de)

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EP3479933A1 (de) 2009-09-17 2019-05-08 Sciaky Inc. Vorrichtung zum generativen herstellung mittels elektronenstrahl
WO2011041100A1 (en) * 2009-09-30 2011-04-07 Carl Zeiss Nts, Llc Variable energy charged particle systems
EP2555902B1 (de) 2010-03-31 2018-04-25 Sciaky Inc. Raster-scanverfahren zum schichtweisen-aufbau mittels eines elekronenstrahls mit einer geschlossenen regelschleife
WO2012017789A1 (ja) * 2010-08-06 2012-02-09 株式会社日立ハイテクノロジーズ ガス電解電離イオン源及びその使用方法、並びに、イオンビーム装置、並びに、エミッタチップ及びその製造方法
TWI447385B (zh) * 2011-09-16 2014-08-01 華亞科技股份有限公司 一種使用聚焦離子束系統進行晶片平面成像的方法
WO2014052718A2 (en) 2012-09-28 2014-04-03 Mevion Medical Systems, Inc. Focusing a particle beam
TW201424466A (zh) 2012-09-28 2014-06-16 Mevion Medical Systems Inc 磁場再生器
CN104813750B (zh) 2012-09-28 2018-01-12 梅维昂医疗系统股份有限公司 调整主线圈位置的磁垫片
JP6367201B2 (ja) 2012-09-28 2018-08-01 メビオン・メディカル・システムズ・インコーポレーテッド 粒子ビームの強度の制御
WO2014052734A1 (en) 2012-09-28 2014-04-03 Mevion Medical Systems, Inc. Controlling particle therapy
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
CN104813747B (zh) 2012-09-28 2018-02-02 梅维昂医疗系统股份有限公司 使用磁场颤振聚焦粒子束
EP3342462B1 (de) 2012-09-28 2019-05-01 Mevion Medical Systems, Inc. Einstellung der energie eines partikelstrahls
US9681531B2 (en) 2012-09-28 2017-06-13 Mevion Medical Systems, Inc. Control system for a particle accelerator
JP6291568B2 (ja) 2013-05-30 2018-03-14 チョウ タイ フック ジュエリー カンパニー リミテッド 材料にマーキングする方法、材料にマーキングするためのシステム、及び該方法によってマーキングされた材料
US8791656B1 (en) 2013-05-31 2014-07-29 Mevion Medical Systems, Inc. Active return system
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US9218934B2 (en) 2013-07-08 2015-12-22 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
CN110237447B (zh) 2013-09-27 2021-11-02 梅维昂医疗系统股份有限公司 粒子治疗系统
JP6246348B2 (ja) 2013-10-11 2017-12-13 チョウ タイ フック ジュエリー カンパニー リミテッド ジェムストーン及びダイヤモンドを含む宝石にマーキングを施す方法及び当該方法に従ってマーキングされた宝石
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
US9619728B2 (en) * 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
US10786689B2 (en) 2015-11-10 2020-09-29 Mevion Medical Systems, Inc. Adaptive aperture
CN109803723B (zh) 2016-07-08 2021-05-14 迈胜医疗设备有限公司 一种粒子疗法系统
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
JP6940676B2 (ja) 2017-06-30 2021-09-29 メビオン・メディカル・システムズ・インコーポレーテッド リニアモーターを使用して制御される構成可能コリメータ
CN118192160A (zh) * 2017-07-21 2024-06-14 卡尔蔡司Smt有限责任公司 用于处理光刻掩模的多余材料的方法与设备
WO2020185544A1 (en) 2019-03-08 2020-09-17 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor
DE102020103339A1 (de) 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US12191110B2 (en) * 2021-04-20 2025-01-07 The University Of Liverpool Reduced spatial/temporal overlaps to increase temporal overlaps to increase precision in focused ion beam FIB instruments for milling and imaging and focused ion beams for lithography
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

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WO2009114230A2 (en) * 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation

Also Published As

Publication number Publication date
US20100294930A1 (en) 2010-11-25
EP2238606B1 (de) 2011-08-24
JP5473004B2 (ja) 2014-04-16
WO2009077450A2 (de) 2009-06-25
WO2009077450A3 (en) 2009-12-03
JP2011507202A (ja) 2011-03-03
US8304750B2 (en) 2012-11-06
EP2238606A2 (de) 2010-10-13

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