ATE521979T1 - Rasterabtaststrahlen geladener teilchen - Google Patents

Rasterabtaststrahlen geladener teilchen

Info

Publication number
ATE521979T1
ATE521979T1 AT08862809T AT08862809T ATE521979T1 AT E521979 T1 ATE521979 T1 AT E521979T1 AT 08862809 T AT08862809 T AT 08862809T AT 08862809 T AT08862809 T AT 08862809T AT E521979 T1 ATE521979 T1 AT E521979T1
Authority
AT
Austria
Prior art keywords
charged particles
raster scanning
scanning beams
sample
portions
Prior art date
Application number
AT08862809T
Other languages
English (en)
Inventor
Dirk Preikszas
Michael Steigerwald
Joerg Ackermann
Original Assignee
Zeiss Carl Nts Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Nts Gmbh filed Critical Zeiss Carl Nts Gmbh
Application granted granted Critical
Publication of ATE521979T1 publication Critical patent/ATE521979T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H01J37/3023—Program control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AT08862809T 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen ATE521979T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1422907P 2007-12-17 2007-12-17
PCT/EP2008/067419 WO2009077450A2 (de) 2007-12-17 2008-12-12 Scanning charged particle beams

Publications (1)

Publication Number Publication Date
ATE521979T1 true ATE521979T1 (de) 2011-09-15

Family

ID=40497572

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08862809T ATE521979T1 (de) 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen

Country Status (5)

Country Link
US (1) US8304750B2 (de)
EP (1) EP2238606B1 (de)
JP (1) JP5473004B2 (de)
AT (1) ATE521979T1 (de)
WO (1) WO2009077450A2 (de)

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WO2009114230A2 (en) 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation
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WO2011034985A1 (en) 2009-09-17 2011-03-24 Sciaky, Inc. Electron beam layer manufacturing
WO2011041100A1 (en) * 2009-09-30 2011-04-07 Carl Zeiss Nts, Llc Variable energy charged particle systems
WO2011123195A1 (en) 2010-03-31 2011-10-06 Sciaky, Inc. Raster methodology, apparatus and system for electron beam layer manufacturing using closed loop control
DE112011102643B4 (de) * 2010-08-06 2023-05-17 Hitachi High-Tech Corporation Gasfeld-Ionenquelle, Ionenstrahl-Vorrichtung und Emitterspitze sowie Verfahren zur Herstellung derselben
TWI447385B (zh) * 2011-09-16 2014-08-01 華亞科技股份有限公司 一種使用聚焦離子束系統進行晶片平面成像的方法
CN104813749B (zh) 2012-09-28 2019-07-02 梅维昂医疗系统股份有限公司 控制粒子束的强度
TW201422278A (zh) 2012-09-28 2014-06-16 Mevion Medical Systems Inc 粒子加速器之控制系統
JP6523957B2 (ja) 2012-09-28 2019-06-05 メビオン・メディカル・システムズ・インコーポレーテッド 磁場を変更するための磁性シム
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
JP6254600B2 (ja) 2012-09-28 2017-12-27 メビオン・メディカル・システムズ・インコーポレーテッド 粒子加速器
EP2900325B1 (de) 2012-09-28 2018-01-03 Mevion Medical Systems, Inc. Einstellung der energie eines partikelstrahls
JP6121544B2 (ja) 2012-09-28 2017-04-26 メビオン・メディカル・システムズ・インコーポレーテッド 粒子ビームの集束
CN108770178B (zh) 2012-09-28 2021-04-16 迈胜医疗设备有限公司 磁场再生器
ES2739634T3 (es) 2012-09-28 2020-02-03 Mevion Medical Systems Inc Control de terapia de partículas
WO2014190801A1 (en) 2013-05-30 2014-12-04 Goldway Technology Limited Method of marking material and system therefore, and material marked according to same method
US8791656B1 (en) 2013-05-31 2014-07-29 Mevion Medical Systems, Inc. Active return system
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US9536699B2 (en) 2013-07-08 2017-01-03 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
ES2768659T3 (es) 2013-09-27 2020-06-23 Mevion Medical Systems Inc Exploración de haces de partículas
EP2860003B1 (de) 2013-10-11 2016-12-07 Chow Tai Fook Jewellery Company Ltd. Verfahren zur Bereitstellung von Markierungen an Edelsteinen, einschließlich Schmucksteine und Diamanten, und Markierungen und entsprechend solch einem Verfahren markierte Edelsteine
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
US9619728B2 (en) * 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
US10786689B2 (en) 2015-11-10 2020-09-29 Mevion Medical Systems, Inc. Adaptive aperture
WO2018009779A1 (en) 2016-07-08 2018-01-11 Mevion Medical Systems, Inc. Treatment planning
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
WO2019006253A1 (en) 2017-06-30 2019-01-03 Mevion Medical Systems, Inc. CONFIGURABLE COLLIMATOR CONTROLLED BY LINEAR MOTORS
KR102757231B1 (ko) * 2017-07-21 2025-01-21 칼 짜이스 에스엠티 게엠베하 포토리소그래피 마스크의 과잉 재료의 폐기를 위한 방법 및 장치
EP3934752A1 (de) 2019-03-08 2022-01-12 Mevion Medical Systems, Inc. Abgabe von strahlung durch eine säule und erzeugung eines behandlungsplanes dafür
DE102020103339A1 (de) 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US12191110B2 (en) * 2021-04-20 2025-01-07 The University Of Liverpool Reduced spatial/temporal overlaps to increase temporal overlaps to increase precision in focused ion beam FIB instruments for milling and imaging and focused ion beams for lithography
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

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JPH0638329A (ja) 1992-07-17 1994-02-10 Totoku Electric Co Ltd 絶縁被膜剥離装置および型巻線の製造方法
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ATE537550T1 (de) 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
JP4748714B2 (ja) * 2005-10-28 2011-08-17 エスアイアイ・ナノテクノロジー株式会社 荷電粒子ビーム走査照射方法、荷電粒子ビーム装置、試料観察方法、及び、試料加工方法
WO2009114230A2 (en) * 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation

Also Published As

Publication number Publication date
EP2238606A2 (de) 2010-10-13
EP2238606B1 (de) 2011-08-24
WO2009077450A2 (de) 2009-06-25
US8304750B2 (en) 2012-11-06
WO2009077450A3 (en) 2009-12-03
US20100294930A1 (en) 2010-11-25
JP2011507202A (ja) 2011-03-03
JP5473004B2 (ja) 2014-04-16

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