ATE521979T1 - Rasterabtaststrahlen geladener teilchen - Google Patents

Rasterabtaststrahlen geladener teilchen

Info

Publication number
ATE521979T1
ATE521979T1 AT08862809T AT08862809T ATE521979T1 AT E521979 T1 ATE521979 T1 AT E521979T1 AT 08862809 T AT08862809 T AT 08862809T AT 08862809 T AT08862809 T AT 08862809T AT E521979 T1 ATE521979 T1 AT E521979T1
Authority
AT
Austria
Prior art keywords
charged particles
raster scanning
scanning beams
sample
portions
Prior art date
Application number
AT08862809T
Other languages
English (en)
Inventor
Dirk Preikszas
Michael Steigerwald
Joerg Ackermann
Original Assignee
Zeiss Carl Nts Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Nts Gmbh filed Critical Zeiss Carl Nts Gmbh
Application granted granted Critical
Publication of ATE521979T1 publication Critical patent/ATE521979T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0807—Gas field ion sources [GFIS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning
    • H01J2237/30488—Raster scan

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AT08862809T 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen ATE521979T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1422907P 2007-12-17 2007-12-17
PCT/EP2008/067419 WO2009077450A2 (de) 2007-12-17 2008-12-12 Scanning charged particle beams

Publications (1)

Publication Number Publication Date
ATE521979T1 true ATE521979T1 (de) 2011-09-15

Family

ID=40497572

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08862809T ATE521979T1 (de) 2007-12-17 2008-12-12 Rasterabtaststrahlen geladener teilchen

Country Status (5)

Country Link
US (1) US8304750B2 (de)
EP (1) EP2238606B1 (de)
JP (1) JP5473004B2 (de)
AT (1) ATE521979T1 (de)
WO (1) WO2009077450A2 (de)

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US8933650B2 (en) 2007-11-30 2015-01-13 Mevion Medical Systems, Inc. Matching a resonant frequency of a resonant cavity to a frequency of an input voltage
US8581523B2 (en) 2007-11-30 2013-11-12 Mevion Medical Systems, Inc. Interrupted particle source
US8907277B2 (en) 2008-03-07 2014-12-09 Carl Zeiss Microscopy, Llc Reducing particle implantation
US8669525B2 (en) * 2008-06-20 2014-03-11 Carl Zeiss Microscopy, Llc Sample inspection methods, systems and components
US8884224B2 (en) * 2009-04-08 2014-11-11 Hermes Microvision, Inc. Charged particle beam imaging assembly and imaging method thereof
AU2010295585B2 (en) 2009-09-17 2015-10-08 Sciaky, Inc. Electron beam layer manufacturing
JP2013506959A (ja) * 2009-09-30 2013-02-28 カール ツァイス エヌティーエス エルエルシー 可変エネルギー荷電粒子システム
US8461474B2 (en) 2010-03-31 2013-06-11 Sciaky, Inc. Raster methodology, apparatus and system for electron beam layer manufacturing using closed loop control
US8847173B2 (en) * 2010-08-06 2014-09-30 Hitachi High-Technologies Corporation Gas field ion source and method for using same, ion beam device, and emitter tip and method for manufacturing same
TWI447385B (zh) * 2011-09-16 2014-08-01 Inotera Memories Inc 一種使用聚焦離子束系統進行晶片平面成像的方法
EP3581242B1 (de) 2012-09-28 2022-04-06 Mevion Medical Systems, Inc. Einstellung der energie eines partikelstrahls
US10254739B2 (en) 2012-09-28 2019-04-09 Mevion Medical Systems, Inc. Coil positioning system
JP6246216B2 (ja) 2012-09-28 2017-12-13 メビオン・メディカル・システムズ・インコーポレーテッド 粒子治療の制御
CN108770178B (zh) 2012-09-28 2021-04-16 迈胜医疗设备有限公司 磁场再生器
WO2014052721A1 (en) 2012-09-28 2014-04-03 Mevion Medical Systems, Inc. Control system for a particle accelerator
US9185789B2 (en) 2012-09-28 2015-11-10 Mevion Medical Systems, Inc. Magnetic shims to alter magnetic fields
US9723705B2 (en) 2012-09-28 2017-08-01 Mevion Medical Systems, Inc. Controlling intensity of a particle beam
US8927950B2 (en) 2012-09-28 2015-01-06 Mevion Medical Systems, Inc. Focusing a particle beam
JP6254600B2 (ja) 2012-09-28 2017-12-27 メビオン・メディカル・システムズ・インコーポレーテッド 粒子加速器
MY172321A (en) 2013-05-30 2019-11-21 Goldway Tech Limited Method of marking material and system therefore, and material marked according to same method
US8791656B1 (en) 2013-05-31 2014-07-29 Mevion Medical Systems, Inc. Active return system
US9730308B2 (en) 2013-06-12 2017-08-08 Mevion Medical Systems, Inc. Particle accelerator that produces charged particles having variable energies
US9530612B2 (en) 2013-07-08 2016-12-27 Carl Zeiss Microscopy, Llc Charged particle beam system and method of operating a charged particle beam system
WO2015048468A1 (en) 2013-09-27 2015-04-02 Mevion Medical Systems, Inc. Particle beam scanning
MY175647A (en) 2013-10-11 2020-07-03 Chow Tai Fook Jewellery Co Ltd Method of providing markings to precious stones including gemstones and diamonds, and markings and marked precious stones marked according to such a method
US9962560B2 (en) 2013-12-20 2018-05-08 Mevion Medical Systems, Inc. Collimator and energy degrader
US10675487B2 (en) 2013-12-20 2020-06-09 Mevion Medical Systems, Inc. Energy degrader enabling high-speed energy switching
US9661736B2 (en) 2014-02-20 2017-05-23 Mevion Medical Systems, Inc. Scanning system for a particle therapy system
US9950194B2 (en) 2014-09-09 2018-04-24 Mevion Medical Systems, Inc. Patient positioning system
US9619728B2 (en) * 2015-05-31 2017-04-11 Fei Company Dynamic creation of backup fiducials
US10786689B2 (en) 2015-11-10 2020-09-29 Mevion Medical Systems, Inc. Adaptive aperture
CN109803723B (zh) 2016-07-08 2021-05-14 迈胜医疗设备有限公司 一种粒子疗法系统
US11103730B2 (en) 2017-02-23 2021-08-31 Mevion Medical Systems, Inc. Automated treatment in particle therapy
EP3645111B1 (de) 2017-06-30 2025-04-23 Mevion Medical Systems, Inc. Unter verwendung von linearmotoren gesteuerter, konfigurierbarer kollimator
WO2019016224A1 (en) * 2017-07-21 2019-01-24 Carl Zeiss Smt Gmbh METHOD AND APPARATUS FOR REMOVING EXCESS MATERIALS FROM A PHOTOLITHOGRAPHIC MASK
US11291861B2 (en) 2019-03-08 2022-04-05 Mevion Medical Systems, Inc. Delivery of radiation by column and generating a treatment plan therefor
DE102020103339A1 (de) 2020-02-10 2021-08-12 Carl Zeiss Microscopy Gmbh Verfahren zum Betrieb eines Teilchenstrahlgeräts, Computerprogrammprodukt und Teilchenstrahlgerät zur Durchführung des Verfahrens
US12191110B2 (en) * 2021-04-20 2025-01-07 The University Of Liverpool Reduced spatial/temporal overlaps to increase temporal overlaps to increase precision in focused ion beam FIB instruments for milling and imaging and focused ion beams for lithography
US11804361B2 (en) * 2021-05-18 2023-10-31 Nuflare Technology, Inc. Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium

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US8907277B2 (en) * 2008-03-07 2014-12-09 Carl Zeiss Microscopy, Llc Reducing particle implantation

Also Published As

Publication number Publication date
JP2011507202A (ja) 2011-03-03
EP2238606B1 (de) 2011-08-24
WO2009077450A3 (en) 2009-12-03
JP5473004B2 (ja) 2014-04-16
WO2009077450A2 (de) 2009-06-25
US20100294930A1 (en) 2010-11-25
EP2238606A2 (de) 2010-10-13
US8304750B2 (en) 2012-11-06

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