ATE535932T1 - Projektionslinsenanordnung - Google Patents

Projektionslinsenanordnung

Info

Publication number
ATE535932T1
ATE535932T1 AT09733141T AT09733141T ATE535932T1 AT E535932 T1 ATE535932 T1 AT E535932T1 AT 09733141 T AT09733141 T AT 09733141T AT 09733141 T AT09733141 T AT 09733141T AT E535932 T1 ATE535932 T1 AT E535932T1
Authority
AT
Austria
Prior art keywords
sub
beamlets
charged particle
beamlet
beams
Prior art date
Application number
AT09733141T
Other languages
English (en)
Inventor
Jan Wieland
Veen Alexander Van
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE535932T1 publication Critical patent/ATE535932T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electron Beam Exposure (AREA)
AT09733141T 2008-04-15 2009-04-15 Projektionslinsenanordnung ATE535932T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
PCT/EP2009/054467 WO2009127658A1 (en) 2008-04-15 2009-04-15 Projection lens arrangement

Publications (1)

Publication Number Publication Date
ATE535932T1 true ATE535932T1 (de) 2011-12-15

Family

ID=40786929

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09733141T ATE535932T1 (de) 2008-04-15 2009-04-15 Projektionslinsenanordnung

Country Status (7)

Country Link
EP (3) EP2279515B1 (de)
JP (4) JP2011517131A (de)
KR (4) KR101638766B1 (de)
CN (2) CN102067272B (de)
AT (1) ATE535932T1 (de)
TW (3) TWI474360B (de)
WO (2) WO2009127659A2 (de)

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US8921758B2 (en) * 2010-10-26 2014-12-30 Mapper Lithography Ip B.V. Modulation device and charged particle multi-beamlet lithography system using the same
US8558196B2 (en) * 2010-11-13 2013-10-15 Mapper Lithography Ip B.V. Charged particle lithography system with aperture array cooling
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
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TWI514089B (zh) 2011-04-28 2015-12-21 Mapper Lithography Ip Bv 在微影系統中用於轉移基板的設備
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JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
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JP7100152B2 (ja) * 2018-05-01 2022-07-12 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査装置
KR20210028250A (ko) * 2018-08-09 2021-03-11 에이에스엠엘 네델란즈 비.브이. 다수 하전-입자 빔들을 위한 장치
EP3624167A1 (de) * 2018-09-14 2020-03-18 FEI Company Bildgebungsvorrichtung mit multi-elektronen-strahl mit verbesserter leistung
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US11942303B2 (en) 2018-12-31 2024-03-26 Asml Netherlands B.V. Systems and methods for real time stereo imaging using multiple electron beams
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Also Published As

Publication number Publication date
TW201003713A (en) 2010-01-16
KR20150091417A (ko) 2015-08-10
WO2009127658A1 (en) 2009-10-22
CN102067272A (zh) 2011-05-18
KR20110007199A (ko) 2011-01-21
EP2281296A2 (de) 2011-02-09
KR20110015555A (ko) 2011-02-16
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
EP2279515A1 (de) 2011-02-02
JP2013140998A (ja) 2013-07-18
CN102067272B (zh) 2014-04-30
EP2402979B1 (de) 2013-10-23
WO2009127659A2 (en) 2009-10-22
JP5268170B2 (ja) 2013-08-21
EP2402979A2 (de) 2012-01-04
TWI534849B (zh) 2016-05-21
CN102067271A (zh) 2011-05-18
JP2013140997A (ja) 2013-07-18
JP2011517130A (ja) 2011-05-26
KR101638766B1 (ko) 2016-07-13
JP5384759B2 (ja) 2014-01-08
TW201003711A (en) 2010-01-16
CN102067271B (zh) 2014-05-21
EP2402979A3 (de) 2012-06-27
KR101678823B1 (ko) 2016-11-23
JP5475155B2 (ja) 2014-04-16
KR20150099617A (ko) 2015-08-31
JP2011517131A (ja) 2011-05-26
EP2279515B1 (de) 2011-11-30
KR101605865B1 (ko) 2016-03-24
TWI474360B (zh) 2015-02-21

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