ATE535932T1 - Projektionslinsenanordnung - Google Patents

Projektionslinsenanordnung

Info

Publication number
ATE535932T1
ATE535932T1 AT09733141T AT09733141T ATE535932T1 AT E535932 T1 ATE535932 T1 AT E535932T1 AT 09733141 T AT09733141 T AT 09733141T AT 09733141 T AT09733141 T AT 09733141T AT E535932 T1 ATE535932 T1 AT E535932T1
Authority
AT
Austria
Prior art keywords
sub
beamlets
charged particle
beamlet
beams
Prior art date
Application number
AT09733141T
Other languages
English (en)
Inventor
Jan Wieland
Veen Alexander Van
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE535932T1 publication Critical patent/ATE535932T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Optics & Photonics (AREA)
AT09733141T 2008-04-15 2009-04-15 Projektionslinsenanordnung ATE535932T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4524308P 2008-04-15 2008-04-15
PCT/EP2009/054467 WO2009127658A1 (en) 2008-04-15 2009-04-15 Projection lens arrangement

Publications (1)

Publication Number Publication Date
ATE535932T1 true ATE535932T1 (de) 2011-12-15

Family

ID=40786929

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09733141T ATE535932T1 (de) 2008-04-15 2009-04-15 Projektionslinsenanordnung

Country Status (7)

Country Link
EP (3) EP2281296A2 (de)
JP (4) JP5268170B2 (de)
KR (4) KR101605865B1 (de)
CN (2) CN102067271B (de)
AT (1) ATE535932T1 (de)
TW (3) TWI534849B (de)
WO (2) WO2009127659A2 (de)

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WO2010134017A1 (en) 2009-05-20 2010-11-25 Mapper Lithography Ip B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
US8987677B2 (en) * 2009-10-26 2015-03-24 Mapper Lithography Ip B.V. Charged particle multi-beamlet lithography system, modulation device, and method of manufacturing thereof
JP5636238B2 (ja) * 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
TWI534852B (zh) 2010-10-26 2016-05-21 瑪波微影Ｉｐ公司 微影系統、調整裝置及製造光纖固定基板之方法
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system
TWI562186B (en) 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Charged particle lithography system and method for transferring a pattern onto a surface of a target and modulation device for use in a charged particle lithography system
JP2012204624A (ja) * 2011-03-25 2012-10-22 Canon Inc 描画装置、および、物品の製造方法
JP6038882B2 (ja) 2011-04-20 2016-12-07 マッパー・リソグラフィー・アイピー・ビー．ブイ． 光ファイバの構成体及びこのような構成体を形成する方法
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
US8936994B2 (en) 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
TW201303524A (zh) 2011-05-18 2013-01-16 Mapper Lithography Ip Bv 用於多子束微影設備的分裂圖案的方法
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
JP2013016744A (ja) 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
WO2013037856A1 (en) 2011-09-12 2013-03-21 Mapper Lithography Ip B.V. Substrate processing apparatus
NL2010759C2 (en) * 2012-05-14 2015-08-25 Mapper Lithography Ip Bv Modulation device and power supply arrangement.
US9460260B2 (en) 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6262024B2 (ja) * 2014-03-04 2018-01-17 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
KR102387713B1 (ko) * 2014-06-13 2022-04-19 인텔 코포레이션 즉각적인 e 빔 정렬
WO2015191107A1 (en) * 2014-06-13 2015-12-17 Intel Corporation Ebeam universal cutter
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TW201618153A (zh) * 2014-09-03 2016-05-16 紐富來科技股份有限公司 多重帶電粒子束的遮沒裝置，多重帶電粒子束描繪裝置，及多重帶電粒子束的不良射束遮蔽方法
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
WO2016158994A1 (ja) * 2015-03-31 2016-10-06 富士フイルム株式会社 パターン形成方法、フォトマスクの製造方法及び電子デバイスの製造方法
JP2016207925A (ja) 2015-04-27 2016-12-08 株式会社アドバンテスト 素子、製造方法、および露光装置
KR102358009B1 (ko) * 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6589597B2 (ja) * 2015-11-25 2019-10-16 株式会社ニューフレアテクノロジー アパーチャのアライメント方法及びマルチ荷電粒子ビーム描画装置
JP6682278B2 (ja) 2016-01-19 2020-04-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビーム露光装置
CN110268330B (zh) * 2016-12-23 2022-01-28 Asml荷兰有限公司 一种使用无掩模光刻曝光系统制造电子器件的方法和系统
US10840056B2 (en) * 2017-02-03 2020-11-17 Kla Corporation Multi-column scanning electron microscopy system
US10176965B1 (en) * 2017-07-05 2019-01-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Aberration-corrected multibeam source, charged particle beam device and method of imaging or illuminating a specimen with an array of primary charged particle beamlets
EP3692562A1 (de) * 2017-10-02 2020-08-12 ASML Netherlands B.V. Vorrichtung mit verwendung geladener teilchenstrahlen
JP7181305B2 (ja) * 2018-03-09 2022-11-30 エーエスエムエル ネザーランズ ビー．ブイ． 信号電子検出性能を向上させたマルチビーム検査装置
IL277822B2 (en) * 2018-05-01 2024-08-01 Asml Netherlands Bv Multi-beam test rig
EP3834222A1 (de) 2018-08-09 2021-06-16 ASML Netherlands B.V. Vorrichtung für mehrere ladungsteilchenstrahlen
EP3624167A1 (de) * 2018-09-14 2020-03-18 FEI Company Bildgebungsvorrichtung mit multi-elektronen-strahl mit verbesserter leistung
US11373838B2 (en) 2018-10-17 2022-06-28 Kla Corporation Multi-beam electron characterization tool with telecentric illumination
WO2020141041A1 (en) * 2018-12-31 2020-07-09 Asml Netherlands B.V. Systems and methods for real time stereo imaging using multiple electron beams
TWI756562B (zh) * 2019-02-28 2022-03-01 日商東芝股份有限公司 多電子束裝置
TWI773030B (zh) 2019-12-20 2022-08-01 荷蘭商Ａｓｍｌ荷蘭公司 用於多射束檢測系統之多模操作
EP3893264A1 (de) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Beurteilungswerkzeug mit geladenen partikeln, inspektionsverfahren
EP3893263A1 (de) * 2020-04-06 2021-10-13 ASML Netherlands B.V. Blendenanordnung, strahlmanipulatoreinheit, verfahren zum manipulieren geladener teilchenstrahlen und geladene teilchenprojektionsvorrichtung
JP7431349B2 (ja) 2020-06-10 2024-02-14 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子装置用の交換可能モジュール
WO2022135926A1 (en) * 2020-12-23 2022-06-30 Asml Netherlands B.V. Electron lens
EP4156227A1 (de) * 2021-09-27 2023-03-29 ASML Netherlands B.V. Ladungsteilchenvorrichtung und -verfahren
TWI856626B (zh) * 2022-05-13 2024-09-21 日商紐富來科技股份有限公司 遮沒孔徑陣列系統，帶電粒子束描繪裝置，及遮沒孔徑陣列系統的檢查方法
EP4391009A1 (de) * 2022-12-21 2024-06-26 ASML Netherlands B.V. Vorrichtung mit geladenen teilchen und vorrichtung mit geladenen teilchen
EP4723158A1 (de) * 2024-10-02 2026-04-08 ASML Netherlands B.V. Optische vorrichtung mit geladenen teilchen und verfahren zur beurteilung

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Also Published As

Publication number Publication date
CN102067272B (zh) 2014-04-30
KR20150091417A (ko) 2015-08-10
TWI474360B (zh) 2015-02-21
CN102067271B (zh) 2014-05-21
WO2009127659A2 (en) 2009-10-22
EP2281296A2 (de) 2011-02-09
TW201003713A (en) 2010-01-16
EP2402979B1 (de) 2013-10-23
EP2279515A1 (de) 2011-02-02
JP2013140998A (ja) 2013-07-18
CN102067272A (zh) 2011-05-18
JP5268170B2 (ja) 2013-08-21
KR101678823B1 (ko) 2016-11-23
KR20110007199A (ko) 2011-01-21
KR20150099617A (ko) 2015-08-31
TW201515044A (zh) 2015-04-16
WO2009127659A3 (en) 2009-12-10
KR101638766B1 (ko) 2016-07-13
JP2011517130A (ja) 2011-05-26
TW201003711A (en) 2010-01-16
JP5384759B2 (ja) 2014-01-08
EP2402979A3 (de) 2012-06-27
JP2011517131A (ja) 2011-05-26
WO2009127658A1 (en) 2009-10-22
JP5475155B2 (ja) 2014-04-16
EP2279515B1 (de) 2011-11-30
KR101605865B1 (ko) 2016-03-24
TWI534849B (zh) 2016-05-21
KR20110015555A (ko) 2011-02-16
JP2013140997A (ja) 2013-07-18
CN102067271A (zh) 2011-05-18
EP2402979A2 (de) 2012-01-04

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